JP5276792B2 - Method for manufacturing semiconductor device - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a technology capable of producing a semiconductor device and a display device using a peeling process, by which a transpose process can be performed in a satisfactory state maintaining the shape and characteristics of the device before the peeling and thereby to provide a technology capable of producing the semiconductor and display devices having higher reliability with high yield without complicating the devices and the processes. <P>SOLUTION: This production method comprises: disposing an organic compound layer containing a photocatalyst substance on a first substrate having light transmitting properties; disposing an element layer on the organic compound layer containing a photocatalyst substance; irradiating a light to the organic compound layer containing a photocatalyst substance by passing the light through the first substrate; and peeling the element layer from the first substrate. <P>COPYRIGHT: (C)2008,JPO&amp;INPIT

Description

The present invention relates to a method for manufacturing a semiconductor device.

2. Description of the Related Art In recent years, attention has been focused on an individual recognition technique in which an ID (individual identification number) is assigned to an individual object to clarify information such as the history of the object and to be useful for production and management. Among them, development of semiconductor devices capable of transmitting and receiving data without contact is underway. As such a semiconductor device, RFID (Radio Frequency Identification) (ID tag, IC tag, IC chip, RF (Radio Frequency) tag, wireless tag, electronic tag, also called wireless chip), etc. are particularly used in companies, markets, etc. Has begun to be introduced.

Many of these semiconductor devices have a circuit using a semiconductor substrate such as silicon (Si) (hereinafter also referred to as an IC (Integrated Circuit) chip) and an antenna, and the IC chip is a memory circuit (hereinafter also referred to as a memory). And a control circuit.

In addition, development of semiconductor devices such as a liquid crystal display device in which thin film transistors (hereinafter also referred to as “TFTs”) are integrated on a glass substrate and an electroluminescence display device is progressing. Each of these semiconductor devices has a thin film transistor formed on a glass substrate by using a thin film formation technique, and a liquid crystal element or a light emitting element (electroluminescence (hereinafter referred to as “hereinafter referred to as“ electroluminescence ”) as a display element on various circuits constituted by the thin film transistor. Also referred to as “EL”.) An element) is formed to function as a semiconductor device.

In the manufacturing process of such a semiconductor device, in order to reduce the manufacturing cost, a process of transferring an element manufactured on a glass substrate, a peripheral circuit, or the like to an inexpensive substrate such as a plastic substrate is performed (for example, Patent Documents). 1).
JP 2002-26282 A

However, due to the element layer to be transferred, for example, if the adhesion between the thin films constituting the element is low, there is a problem that the element is not properly peeled off from the glass substrate and the element is destroyed. That is, it becomes difficult to transpose the element in a good state while maintaining the shape and characteristics before peeling.

In view of such a problem, the present invention provides a technique capable of manufacturing a semiconductor device and a display device by using a peeling process so that the transfer process can be performed in a good state while maintaining the shape and characteristics before peeling. Therefore, an object is also to provide a technique capable of manufacturing a highly reliable semiconductor device and display device with high yield without complicating the device and the process.

In the present invention, when an element layer is formed on a substrate, an organic compound layer containing a substance having a photocatalytic function (hereinafter also referred to as a photocatalytic substance) is provided between the substrate and the element layer. The photocatalytic material absorbs and activates light. The active energy acts on surrounding organic compounds, and as a result, changes the physical properties of the organic compounds and modifies them. That is, the carbon-hydrogen bond and carbon-carbon bond of the organic compound are separated by the energy (oxidizing power) of the activated photocatalytic substance, and a part of the organic compound becomes carbon dioxide and water to be degassed. As a result, the organic compound layer containing the photocatalytic substance becomes rough and is separated (divided) into the element layer side and the substrate side inside the layer. Therefore, the element layer can be peeled from the substrate.

In the present invention, by dispersing the photocatalytic substance in the organic compound layer, the organic compound is decomposed (destroyed) using the photocatalytic function of the photocatalytic substance to roughen the organic compound in the layer, and the element layer is peeled from the substrate. Therefore, it is not necessary to apply a large force to the element layer for peeling, and the film is peeled off at the interface between the layers in the peeling process, and the element is destroyed, resulting in a problem that the transposition cannot be performed in a good shape. Absent. In this specification, good shape means that the shape before peeling is not damaged, such as film peeling or peeling residue, the shape before peeling is maintained, and the electrical characteristics and reliability of the element by the peeling process This refers to a state in which no deterioration or the like has occurred and the characteristics before peeling are maintained. In this specification, transposition means that an element layer formed over a first substrate is peeled off from the first substrate and transferred to the second substrate. That is, it can be said that the element layer is moved to another substrate.

In the present invention, a flexible counter substrate to be transferred after light irradiation to the photocatalyst material may be attached, or the photocatalyst material may be irradiated with light after the substrate to be transferred is attached to the element layer. Good.

Note that in the present invention, a semiconductor device refers to a device that can function by utilizing semiconductor characteristics. By using the present invention, a device having a circuit including a semiconductor element (such as a transistor or a diode) or a semiconductor device such as a processor chip can be manufactured.

The present invention can also be used for a display device that is a device having a display function. The display device using the present invention includes an organic substance, an inorganic substance, and an organic substance that emits light called electroluminescence (hereinafter also referred to as “EL”). Alternatively, there are a light-emitting display device in which a light-emitting element in which a layer containing a mixture of an organic substance and an inorganic substance is interposed between electrodes and a TFT are connected, and a liquid crystal display device in which a liquid crystal element having a liquid crystal material is used as a display element. In the present invention, a display device refers to a device having a display element (such as a liquid crystal element or a light emitting element). Note that a display panel body in which a plurality of pixels including a display element such as a liquid crystal element or an EL element and a peripheral driver circuit for driving these pixels are formed over a substrate may be used. Furthermore, a device to which a flexible printed circuit (FPC) or a printed wiring board (PWB) is attached (such as an IC, a resistor, a capacitor, an inductor, or a transistor) may also be included. Furthermore, an optical sheet such as a polarizing plate or a retardation plate may be included. Furthermore, a backlight (which may include a light guide plate, a prism sheet, a diffusion sheet, a reflection sheet, or a light source (such as an LED or a cold cathode tube)) may be included.

Note that the display element and the display device can have various forms or have various elements. For example, EL elements (organic EL elements, inorganic EL elements or EL elements including organic and inorganic substances), electron-emitting elements, liquid crystal elements, electronic ink, grating light valves (GLV), plasma displays (PDP), digital micromirror devices ( DMD), piezoelectric ceramic displays, carbon nanotubes, and the like, which can be applied to display media whose contrast is changed by an electromagnetic action. Note that a display device using an EL element is an EL display, and a display device using an electron-emitting device is a liquid crystal display such as a field emission display (FED) or a SED type flat display (SED: Surface-conduction Electron-Emitter Display). A display device using the element includes a liquid crystal display, a transmissive liquid crystal display, a transflective liquid crystal display, a reflective liquid crystal display, and a display device using electronic ink includes electronic paper.

In one embodiment of a method for manufacturing a semiconductor device of the present invention, an organic compound layer having a photocatalytic substance is formed over a light-transmitting first substrate, an element layer is formed over the organic compound layer having a photocatalytic substance, Light is allowed to pass through the first substrate, and the organic compound layer containing the photocatalytic substance is irradiated to peel off the element layer from the first substrate.

In one embodiment of a method for manufacturing a semiconductor device of the present invention, an organic compound layer having a photocatalytic substance is formed over a light-transmitting first substrate, an insulating layer is formed over the organic compound layer having a photocatalytic substance, An element layer is formed over the insulating layer, light is allowed to pass through the first substrate, the organic compound layer having a photocatalytic substance is irradiated, and the element layer and the insulating layer are separated from the first substrate.

In one embodiment of a method for manufacturing a semiconductor device of the present invention, an organic compound layer having a photocatalytic substance is formed over a light-transmitting first substrate, an element layer is formed over the organic compound layer having a photocatalytic substance, Light is passed through the first substrate, the organic compound layer having a photocatalytic substance is irradiated, the second substrate is bonded onto the element layer, and the element layer is peeled from the first substrate to the second substrate.

In one embodiment of a method for manufacturing a semiconductor device of the present invention, an organic compound layer having a photocatalytic substance is formed over a light-transmitting first substrate, an insulating layer is formed over the organic compound layer having a photocatalytic substance, An element layer is formed over the insulating layer, light is allowed to pass through the first substrate, the organic compound layer having a photocatalytic substance is irradiated, the second substrate is bonded onto the element layer, and the element layer and the insulating layer are formed. Peel from the first substrate to the second substrate.

In one embodiment of a method for manufacturing a semiconductor device of the present invention, an organic compound layer having a photocatalytic substance is formed over a light-transmitting first substrate, an element layer is formed over the organic compound layer having a photocatalytic substance, Passing light through the first substrate, irradiating the organic compound layer having a photocatalytic substance, adhering the second substrate on the element layer, peeling the element layer from the first substrate to the second substrate; The element layer is bonded to the third substrate by the adhesive layer.

In one embodiment of a method for manufacturing a semiconductor device of the present invention, an organic compound layer having a photocatalytic substance is formed over a light-transmitting first substrate, an insulating layer is formed over the organic compound layer having a photocatalytic substance, An element layer is formed over the insulating layer, light is allowed to pass through the first substrate, the organic compound layer having a photocatalytic substance is irradiated, the second substrate is bonded onto the element layer, and the element layer and the insulating layer are formed. The first substrate is separated from the second substrate, and the insulating layer is bonded to the third substrate with the adhesive layer.

In the above structure, the third substrate bonded to the element layer side after peeling the element layer from the first substrate does not transmit (shield) light having a wavelength that activates the photocatalytic substance remaining in the element layer. Such a material may be used. When the second substrate and the third substrate are flexible substrates or resin films are used, flexible semiconductor devices and display devices can be manufactured.

In the present invention, by dispersing the photocatalytic substance in the organic compound layer, the organic compound is decomposed (destroyed) using the photocatalytic function of the photocatalytic substance to roughen the organic compound in the layer, and the element layer is peeled from the substrate. Therefore, since it is not necessary to apply a large force to the element layer for peeling, the element is not destroyed in the peeling process, and can be freely transferred to various substrates with a good shape.

According to the present invention, a semiconductor device and a display device can be manufactured by using a peeling process so that the transfer process can be performed in a good state while maintaining the shape and characteristics before peeling. Therefore, a highly reliable semiconductor device and display device can be manufactured with high yield without complicating the device and the process.

Embodiments of the present invention will be described in detail with reference to the drawings. However, the present invention is not limited to the following description, and it is easily understood by those skilled in the art that modes and details can be variously changed without departing from the spirit and scope of the present invention. Therefore, the present invention should not be construed as being limited to the description of the embodiments below. Note that in structures of the present invention described below, the same portions or portions having similar functions are denoted by the same reference numerals in different drawings, and description thereof is not repeated.

(Embodiment 1)
An embodiment of the present invention will be described with reference to FIG.

In the present invention, when an element layer is formed on a substrate, an organic compound layer containing a substance having a photocatalytic function (hereinafter also referred to as a photocatalytic substance) is provided between the substrate and the element layer. The photocatalytic material absorbs and activates light. The active energy acts on surrounding organic compounds, and as a result, changes the physical properties of the organic compounds and modifies them. That is, the carbon-hydrogen bond and carbon-carbon bond of the organic compound are separated by the energy (oxidizing power) of the activated photocatalytic substance, and a part of the organic compound becomes carbon dioxide and water to be degassed. As a result, the organic compound layer containing the photocatalytic substance becomes rough and is separated (divided) into the element layer side and the substrate side inside the layer. Therefore, the element layer can be peeled from the substrate. When the organic compound layer containing the photocatalytic substance becomes rough, the organic compound region of the layer becomes rough and the density decreases.

In the present invention, by dispersing the photocatalytic substance in the organic compound layer, the organic compound is decomposed (destroyed) using the photocatalytic function of the photocatalytic substance to roughen the organic compound in the layer, and the element layer is peeled from the substrate. Therefore, it is not necessary to apply a large force to the element layer for peeling, and the film is peeled off at the interface between the layers in the peeling process, and the element is destroyed, resulting in a problem that the transposition cannot be performed in a good shape. Absent. In this specification, good shape means that the shape before peeling is not damaged, such as film peeling or peeling residue, the shape before peeling is maintained, and the electrical characteristics and reliability of the element by the peeling process This refers to a state in which no deterioration or the like has occurred and the characteristics before peeling are maintained. In this specification, transposition means that an element layer formed over a first substrate is peeled off from the first substrate and transferred to the second substrate. That is, it can be said that the element layer is moved to another substrate.

In FIG. 1, an organic compound layer 72 containing a photocatalytic substance is provided between a first substrate 70 and an element layer 73. The first substrate 70 can withstand a process (such as a heat treatment) in a process of forming an element such as a thin film transistor or a display element (light emitting element (organic EL element, inorganic EL element), liquid crystal display element) included in the element layer 73. In other words, a substrate suitable for the production process conditions may be selected. A photocatalytic substance 71 is contained in the organic compound layer 72 containing the photocatalytic substance. The shape of the photocatalytic substance may be any shape such as granular, columnar, needle-like, or plate-like, and a plurality of photocatalytic substance particles may aggregate to form an aggregate as a single body.

An example of forming the organic compound layer 72 containing a photocatalytic substance will be described below. The photocatalytic substance 71 is dispersed in a solution containing an organic compound. Stirring may be performed so that the photocatalytic substance 71 is uniformly dispersed in the solution containing the organic compound. What is necessary is just to set the viscosity of a solution suitably so that a desired film thickness may be obtained as a layer, maintaining fluidity | liquidity. The organic compound also functions to fix the granular photocatalytic substance in a dispersed state and maintain the shape as a layer.

A solution containing an organic compound in which the photocatalytic substance 71 is dispersed is attached to the first substrate 70 by a wet process such as a printing method, and is dried and solidified to form an organic compound layer 72 containing the photocatalytic substance. The solvent is removed by evaporation, and the organic compound layer 72 containing the photocatalytic material contains the organic compound and the photocatalytic material 71. The photocatalytic substance 71 is uniformly dispersed and fixed in the organic compound layer 72 containing the photocatalytic substance by the organic compound.

The formation method of the organic compound layer 72 containing a photocatalytic substance is a droplet discharge method that can selectively form an organic compound layer containing a photocatalytic substance, a coating method (such as screen printing or offset printing), or a coating method such as a spin coating method. A dipping method, a dispenser method, or the like can also be used. The film thickness is not particularly limited. Further, the organic compound layer containing the photocatalytic substance may contain the photocatalytic substance, but the ratio of the photocatalytic substance may be 10 wt% or more and 90 wt% or less. These ratios are appropriately determined because they are affected by the performance of the photocatalytic function of the photocatalytic substance, the intensity of the irradiated light, and the intensity of the organic compound to be decomposed. Further, the shape contained in the organic compound layer of the photocatalytic substance is not limited. A photocatalytic substance that is minute relative to the film thickness may be dispersed in the organic compound layer, or a particulate photocatalytic substance that is approximately the same size as the film thickness is coated with an organic compound and adhered to form a layer. Anything that takes Further, the size of the photocatalyst substance contained is not necessarily uniform, and a plurality of photocatalyst substances having different sizes may be mixed in the organic compound layer.

An element layer 73 is formed over the organic compound layer 72 containing the photocatalytic substance formed by the above steps (see FIG. 1A).

After that, from the light-transmitting first substrate 70 side, the light source 76 irradiates the photocatalytic substance 71 with light 77 through the first substrate 70.

The light to be used is not particularly limited, and any one of infrared light, visible light, and ultraviolet light, or a combination thereof can be used. For example, light emitted from an ultraviolet lamp, black light, halogen lamp, metal halide lamp, xenon arc lamp, carbon arc lamp, high pressure sodium lamp, or high pressure mercury lamp may be used. In that case, the lamp light source may be lit and irradiated for a necessary time, or may be irradiated multiple times.

Laser light may be used as light to be used, and a laser oscillator that can oscillate ultraviolet light, visible light, or infrared light can be used as the laser oscillator. Examples of laser oscillators include excimer laser oscillators such as KrF, ArF, XeCl, and Xe, gas laser oscillators such as He, He—Cd, Ar, He—Ne, and HF, YAG, GdVO ₄ , YVO ₄ , YLF, and YAlO _3. A solid-state laser oscillator using a crystal doped with Cr, Nd, Er, Ho, Ce, Co, Ti, or Tm, and a semiconductor laser oscillator such as GaN, GaAs, GaAlAs, or InGaAsP can be used. In the solid-state laser oscillator, it is preferable to apply the first to fifth harmonics of the fundamental wave. In order to adjust the shape of the laser light emitted from the laser oscillator and the path of the laser light, an optical system including a reflector such as a shutter, a mirror or a half mirror, a cylindrical lens, or a convex lens may be installed.

Note that the irradiation method may be to selectively irradiate light by moving the substrate, or to irradiate light by scanning light in the XY axis direction. In this case, it is preferable to use a polygon mirror or a galvanometer mirror for the optical system.

In addition, light can be used in combination with light from a lamp light source and laser light, and a region where a relatively wide exposure process is performed is a laser beam only in a region where a lamp is irradiated and a high-precision exposure process is performed. Irradiation treatment can also be performed. By performing the light irradiation process in this way, throughput can be improved.

The photocatalytic substance 71 absorbs light 77 and activates it. The active energy acts on the surrounding organic compound contained in the organic compound layer 72 containing the photocatalytic substance, and as a result, the physical properties of the organic compound are changed and modified. That is, the carbon-hydrogen bond and carbon-carbon bond of the organic compound are separated by the energy (oxidizing power) of the activated photocatalytic substance 71, and a part of the organic compound becomes carbon dioxide and water to be degassed. As a result, the organic compound layer 72 containing the photocatalytic substance becomes rough and becomes an organic compound layer 75 containing the photocatalytic substance.

A second substrate 78 is provided over the element layer 73 (see FIG. 1B). The second substrate may be adhered to the element layer 73 using an adhesive layer or the like, or a protective layer such as a resin layer may be directly formed on the element layer.

When a force is applied to transfer the element layer 73 to the second substrate 78 side, the organic compound layer 75 containing the photocatalytic substance is weakened in strength. The organic compound layer 79b is separated (divided) from the organic compound layer 79a containing the photocatalytic substance on the substrate side. Therefore, the element layer 73 can be peeled from the first substrate 70.

In the present invention, by dispersing the photocatalytic substance in the organic compound layer, the organic compound is decomposed (destroyed) using the photocatalytic function of the photocatalytic substance to roughen the organic compound in the layer, and the element layer is peeled from the substrate. Therefore, since it is not necessary to apply a large force to the element layer for peeling, the element is not destroyed in the peeling process, and can be freely transferred to various substrates with a good shape.

Therefore, since it can be freely transferred to various substrates, the range of substrate material selectivity is widened. In addition, an inexpensive material can be selected as the substrate, so that not only a wide function can be provided depending on the application, but also a semiconductor device can be manufactured at low cost.

The concentration of the photocatalytic substance in the organic compound layer may be uniform in the organic compound layer containing the photocatalytic substance, or may have a concentration gradient in the film thickness direction. The photocatalytic substance and the organic compound do not have to be formed simultaneously in a mixed state. First, the photocatalytic substance is interspersed on the substrate, and an organic compound layer is formed so as to fill the space between the particles of the photocatalytic substance. Also good. Alternatively, the organic compound layer may be formed first, and the photocatalytic substance may be introduced into the organic compound layer (for example, after being dispersed on the organic compound layer and then diffused into the organic compound layer). In the present invention, the organic compound layer containing the photocatalytic substance may be formed by any process as long as the photocatalytic substance and the organic compound are formed as a layer in a mixed state.

In this specification, a high concentration means that the existence probability of the photocatalytic substance is high and the distribution is large. These concentrations can be represented by volume ratio, weight ratio, composition ratio, etc. depending on the physical properties of the substance.

As an example of the mixed state of the photocatalytic substance in the organic compound layer, FIG. 2 and FIG. 3 show a case where there is a concentration gradient of the photocatalytic substance in the organic compound layer thickness direction in the organic compound layer containing the photocatalytic substance.

The organic compound layer containing the photocatalytic substance shown in FIG. 2A is an example of the organic compound layer containing the photocatalytic substance of the present invention, and the organic compound layer 86 having the photocatalytic substance mixed region 85 is formed on the first substrate 70. The element layer 73 is formed on the organic compound layer 86. The photocatalytic substance mixed in the organic compound layer 86 has a concentration gradient, and the photocatalytic substance exists nonuniformly in the organic compound layer 86. The photocatalytic substance mixing region 85 is provided in the vicinity of the interface between the organic compound layer 86 and the element layer 73. Therefore, the concentration of the photocatalytic substance in the organic compound layer 86 is highest in the organic compound layer 86 at the interface between the organic compound layer 86 and the element layer 73. The photocatalytic substance mixed region 85 does not have a clear interface with the non-photocatalytic substance mixed region, and can have a structure in which the concentration gradually changes as it approaches the element layer 73 in the film thickness direction in the organic compound layer.

The photocatalytic material is irradiated with light from the first substrate 70, and the organic compound is decomposed by the activated energy to form the organic compound layer 88 including the photocatalytic material with reduced strength. After that, the second substrate 78 is bonded to the element layer 73, and the element layer 73 is peeled from the first substrate 70 (see FIGS. 2B to 2D). Since the roughening of the organic compound layer by the photocatalytic substance occurs in the photocatalyst substance mixed region 87, the organic compound layer 89b containing the photocatalytic substance on the element layer side inside the layer and the organic compound layer 89a containing the photocatalytic substance on the substrate side are included. Separate (divide).

The organic compound layer containing the photocatalytic substance shown in FIG. 3A is an example of the organic compound layer containing the photocatalytic substance of the present invention, and an organic compound layer 81 having a photocatalytic substance mixed region 80 is formed on the first substrate 70. The element layer 73 is formed on the organic compound layer 81. The photocatalytic substance mixed in the organic compound layer 81 has a concentration gradient, and the photocatalytic substance exists nonuniformly in the organic compound layer 81. The photocatalytic substance mixing region 80 is provided near the interface between the organic compound layer 81 and the first substrate 70. Therefore, the concentration of the photocatalytic substance in the organic compound layer 81 is highest in the organic compound layer 81 in the vicinity of the interface between the organic compound layer 81 and the first substrate 70. The photocatalyst substance mixed region does not have a clear interface with the non-photocatalytic material mixed region, and can have a structure in which the concentration gradually changes as it approaches the element layer 73 in the film thickness direction in the organic compound layer.

The photocatalytic substance is irradiated with light from the first substrate 70, and the organic compound is decomposed by the activated energy to form the organic compound layer 83 containing the photocatalytic substance having reduced strength. After that, the second substrate 78 is bonded to the element layer 73, and the element layer 73 is separated from the first substrate 70 (see FIGS. 3B to 3D). Since the roughening of the organic compound layer by the photocatalytic substance occurs in the photocatalyst substance mixed region 82, the organic compound layer 84b containing the photocatalytic substance on the element layer side inside the layer and the organic compound layer 84a containing the photocatalytic substance on the substrate side are included. Separate (divide).

An insulating layer may be provided between the organic compound layer containing the photocatalytic substance and the element layer. In FIG. 4, an insulating layer 90 is provided between the organic compound layer 72 containing a photocatalytic substance and the element layer 73. The insulating layer 90 can prevent contamination of the element layer with impurities and the like, and can block light irradiation to the element layer by using a material that absorbs or reflects light used for exposure. Further, after the element layer is peeled from the first substrate 70, the insulating layer 90 can be used as a substrate for supporting and sealing the element layer 73 as it is.

Photocatalytic substances that can be used in the present invention include titanium oxide (TiO ₂ ), strontium titanate (SrTiO ₃ ), cadmium selenide (CdSe), potassium tantalate (KTaO ₃ ), cadmium sulfide (CdS), zirconium oxide. (ZrO ₂ ), niobium oxide (Nb ₂ O ₅ ), zinc oxide (ZnO), iron oxide (Fe ₂ O ₃ ), tungsten oxide (WO ₃ ) and the like are preferable. These photocatalytic substances can be irradiated with light in the ultraviolet region (wavelength 400 nm or less, preferably 380 nm or less) to cause photocatalytic activity.

In the case of a photocatalytic substance made of an oxide semiconductor containing a plurality of metals, it can be formed by mixing and melting constituent element salts. When it is necessary to remove the solvent, baking and drying may be performed. Specifically, heating may be performed at a predetermined temperature (for example, 300 ° C. or higher), and preferably performed in an atmosphere containing oxygen.

By this heat treatment, the photocatalytic substance can have a predetermined crystal structure. For example, titanium oxide (TiO ₂ ) has an anatase type and a rutile-anatase mixed type, and the anatase type is preferentially formed in the low temperature phase. Therefore, heating may be performed even when the photocatalytic substance does not have a predetermined crystal structure.

Furthermore, the photocatalytic substance can be doped with transition metals (Pd, Pt, Cr, Ni, V, Mn, Fe, Ce, Mo, W, etc.) to improve the photocatalytic activity or visible light region (wavelength 400 nm to 800 nm). Photocatalytic activity can be caused by the light. This is because transition metals can form a new level in the forbidden band of an active photocatalyst having a wide band gap, and can extend the light absorption range to the visible light region. For example, an acceptor type such as Cr or Ni, a donor type such as V or Mn, an amphoteric type such as Fe, and Ce, Mo, W, or the like can be doped. Thus, since the wavelength of light can be determined by the photocatalytic substance, the light irradiation means irradiation with light having a wavelength that activates the photocatalytic substance.

Further, when the photocatalytic substance is heated and reduced in vacuum or hydrogen reflux, oxygen defects are generated in the crystal. Thus, oxygen defects play the same role as electron donors even without doping with a transition element. In particular, in the case of forming by the sol-gel method, oxygen defects are present from the beginning, so that reduction is not necessary. Further, oxygen defects can be formed by doping a gas such as N ₂ .

As an organic compound that can be used in the present invention, an organic material or a mixed material of an organic material and an inorganic material can be used. As the organic material, a resin such as cyanoethyl cellulose resin, polyethylene, polypropylene, polystyrene resin, silicone resin, epoxy resin, or vinylidene fluoride can be used. Alternatively, a heat-resistant polymer such as aromatic polyamide, polybenzimidazole, or siloxane resin may be used. Note that a siloxane resin corresponds to a resin including a Si—O—Si bond. Siloxane has a skeleton structure formed of a bond of silicon (Si) and oxygen (O). As a substituent, an organic group containing at least hydrogen (for example, an alkyl group or an aryl group) is used. A fluoro group may be used as a substituent. Alternatively, an organic group containing at least hydrogen and a fluoro group may be used as a substituent. Moreover, resin materials such as vinyl resins such as polyvinyl alcohol and polyvinyl butyral, phenol resins, novolac resins, acrylic resins, melamine resins, urethane resins, and oxazole resins (polybenzoxazole) may be used.

Examples of the inorganic material included in the organic compound include silicon oxide, silicon nitride, silicon oxynitride, silicon nitride oxide, aluminum nitride (AlN), aluminum oxynitride (AlON), aluminum nitride oxide (AlNO), aluminum oxide, and titanium oxide ( TiO ₂ ), BaTiO ₃ , SrTiO ₃ , PbTiO ₃ , KNbO ₃ , PbNbO ₃ , Ta ₂ O ₃ , BaTa ₂ O ₆ , LiTaO ₃ , Y ₂ O ₃ , ZrO ₂ , ZnS, and other inorganic materials Selected materials can be used.

As a solvent of a solution containing an organic compound that can be used in the present invention, a method of dissolving an organic compound material to form an organic compound layer (various wet processes) and a solution having a viscosity suitable for a desired film thickness can be prepared. Such a solvent may be appropriately selected. For example, when a siloxane resin is used as the organic compound, propylene glycol monomethyl ether, propylene glycol monomethyl ether acetate (also referred to as PGMEA), 3-methoxy-3-methyl-1-butanol (also referred to as MMB). ) Etc. can be used.

According to the present invention, a semiconductor device and a display device can be manufactured by using a peeling process so that the transfer process can be performed in a good state while maintaining the shape and characteristics before peeling. Therefore, a highly reliable semiconductor device can be manufactured with high yield without complicating the device and the process.

(Embodiment 2)
In this embodiment, a structural example of a display device to which the transposition process of the present invention is applied will be described with reference to the drawings. More specifically, the case where the structure of the display device is a passive matrix type will be described.

The display device includes a first electrode layer 751a, a first electrode layer 751b, a first electrode layer 751c, a first electrode layer 751a, a first electrode layer 751b, and a first electrode extending in the first direction. An electroluminescent layer 752 provided to cover the layer 751c, and a second electrode layer 753a, a second electrode layer 753b, and a second electrode layer 753c extending in a second direction perpendicular to the first direction. (See FIG. 5A). An electroluminescent layer 752 is provided between the first electrode layer 751a, the first electrode layer 751b, the first electrode layer 751c, the second electrode layer 753a, the second electrode layer 753b, and the second electrode layer 753a. Is provided. In addition, an insulating layer 754 functioning as a protective film is provided so as to cover the second electrode layer 753a, the second electrode layer 753b, and the second electrode layer 753a, and the first electrode layer 751a, the first electrode layer 751a, The element layer provided with the electrode layer 751b, the first electrode layer 751c, the second electrode layer 753a, the second electrode layer 753b, the second electrode layer 753a, the electroluminescent layer 752, and the insulating layer 754 is formed over the substrate 758. They are provided in contact with each other (see FIG. 5B). Note that in the case where there is a concern about the influence of a horizontal electric field between adjacent light emitting elements, the electroluminescent layer 752 provided in each light emitting element may be separated.

FIG. 5C is a modification example of FIG. 5B, and includes a first electrode layer 791a, a first electrode layer 791b, a first electrode layer 791c, an electroluminescent layer 792, and a second electrode layer 793b. An insulating layer 794 which is a protective layer is provided in contact with the substrate 798. As in the first electrode layer 791a, the first electrode layer 791b, and the first electrode layer 791c in FIG. 5C, the first electrode layer may have a tapered shape, and the radius of curvature is continuous. The shape may change. Shapes such as the first electrode layer 791a, the first electrode layer 791b, and the first electrode layer 791c can be formed by a droplet discharge method or the like. When the curved surface has such a curvature, the insulating layer and the conductive layer to be stacked have good coverage.

In addition, a partition wall (insulating layer) may be formed so as to cover an end portion of the first electrode layer. The partition wall (insulating layer) serves as a wall separating other light emitting elements. 8A and 8B illustrate a structure in which the end portion of the first electrode layer is covered with a partition wall (insulating layer).

8A, the partition wall (insulating layer) 775 is tapered so as to cover end portions of the first electrode layer 771a, the first electrode layer 771b, and the first electrode layer 771c. It is formed in the shape which has. A partition wall (insulating layer) 775, an electroluminescent layer 772, a second electrode layer 773b, an insulating layer 774, and an insulating layer 776 are formed over the first electrode layer 771a, the first electrode layer 771b, and the first electrode layer 771c. The element layer provided with is provided in contact with the substrate 778.

An example of the light-emitting element illustrated in FIG. 8B has a shape in which the partition wall (insulating layer) 765 has a curvature, and the radius of curvature continuously changes. An element layer provided with the first electrode layer 761a, the first electrode layer 761b, the first electrode layer 761c, the electroluminescent layer 762, the second electrode layer 763b, and the insulating layer 764 is provided in contact with the substrate 768. It has been.

In the present invention, by dispersing the photocatalytic substance in the organic compound layer, the organic compound is decomposed (destroyed) using the photocatalytic function of the photocatalytic substance to roughen the organic compound in the layer, and the element layer is peeled from the substrate. Therefore, since it is not necessary to apply a large force to the element layer for peeling, the element is not destroyed in the peeling process, and can be freely transferred to various substrates with a good shape. The remaining layers on the element layer side after peeling of the organic compound layer containing the photocatalytic substance are organic compound layers 759b, 769b, 779b, and 799b containing the photocatalytic substance.

Therefore, since it can be freely transferred to various substrates, the range of substrate material selectivity is widened. In addition, an inexpensive material can be selected as the substrate, so that not only a wide function can be provided depending on the application, but also a semiconductor device can be manufactured at low cost.

FIG. 6 illustrates a manufacturing process of the display device in FIGS. In FIG. 6A, an organic compound layer 756 including a photocatalytic substance is provided between the first substrate 750 and the first electrode layers 751a, 751b, and 751c. As the first substrate 750, a substrate that can withstand a process (such as heat treatment) in a process for forming a display element included in the element layer and that is suitable for a manufacturing process condition may be selected. The organic compound layer 756 containing a photocatalytic substance contains a photocatalytic substance.

After that, light 781 is irradiated from the light source 780 through the first substrate 750 from the light-transmitting first substrate 750 side (see FIG. 6B).

The photocatalytic substance absorbs light 781 and activates it. The active energy acts on the surrounding organic compound contained in the organic compound layer 756 containing the photocatalytic substance, and as a result, the physical properties of the organic compound are changed and modified. That is, the carbon-hydrogen bond and carbon-carbon bond of the organic compound are separated by the energy (oxidizing power) of the activated photocatalytic substance, and a part of the organic compound becomes carbon dioxide and water to be degassed. As a result, the organic compound layer 756 containing the photocatalytic substance becomes rough, and an organic compound layer 757 containing the photocatalytic substance is obtained. When the organic compound layer containing the photocatalytic substance becomes rough, the organic compound region of the layer becomes rough and the density decreases.

A second substrate 758 is provided over the insulating layer 754 that includes the light-emitting element 785 (see FIG. 6C). The second substrate 758 may be bonded to the element layer using an adhesive layer or the like, or a protective layer such as a resin layer may be directly formed on the element layer.

When a force is applied to transfer the element layer including the light-emitting element 785 to the second substrate 758 side, the organic compound layer 757 including the photocatalytic substance is weakened in strength. The organic compound layer 759b containing the photocatalytic substance and the organic compound layer 759a containing the photocatalytic substance on the substrate side are separated (divided). Accordingly, the element layer including the light-emitting element 785 can be peeled from the first substrate 750.

FIG. 7 shows a manufacturing process of a passive matrix liquid crystal display device to which the present invention is applied. In FIG. 7, an organic compound layer 1707 containing a photocatalytic substance is formed, a first pixel electrode layer 1701a, 1701b, 1701c, a first substrate 1700 provided with an insulating layer 1712 functioning as an alignment film, and an alignment film A second substrate 1710 provided with a functioning insulating layer 1704, a counter electrode layer 1705, and a coloring layer 1706 functioning as a color filter is opposed to each other with the liquid crystal layer 1703 interposed therebetween. An organic compound layer 1707 containing a photocatalytic substance is provided between the first substrate 1700 and the first pixel electrode layers 1701a, 1701b, and 1701c. As the first substrate 1700, a substrate which can withstand a process (such as heat treatment) in the process for forming the liquid crystal display element 1713 included in the element layer and which is suitable for a manufacturing process condition may be selected. The organic compound layer 1707 containing a photocatalytic substance contains a photocatalytic substance.

After that, light 781 is irradiated from the light source 780 through the first substrate 1700 from the light-transmitting first substrate 1700 side (see FIG. 6B).

The photocatalytic substance absorbs light 781 and activates it. The active energy acts on the surrounding organic compound contained in the organic compound layer 1707 containing the photocatalytic substance, and as a result, the physical properties of the organic compound are changed and modified. That is, the carbon-hydrogen bond and carbon-carbon bond of the organic compound are separated by the energy (oxidizing power) of the activated photocatalytic substance, and a part of the organic compound becomes carbon dioxide and water to be degassed. As a result, the organic compound layer 1707 containing the photocatalytic substance becomes rough, and an organic compound layer 1708 containing the photocatalytic substance is obtained.

When a force is applied to displace the element layer including the liquid crystal display element 1713 on the second substrate 1710 side, the organic compound layer 1708 including the photocatalytic substance is weakened in strength. The organic compound layer 1709b containing the photocatalytic substance on the side and the organic compound layer 1709a containing the photocatalytic substance on the substrate side are separated (divided). Accordingly, the element layer including the liquid crystal display element 1713 can be peeled from the first substrate 1700.

After the element layer including the liquid crystal display element 1713 is peeled from the first substrate 1700, the third substrate 1711 is bonded to the organic compound layer 1709a including the photocatalytic substance in the element layer (see FIG. 7D). The third substrate 1711 may be made of a material that does not transmit light having a wavelength that activates the photocatalytic substance remaining in the element layer.

In the present invention, by dispersing the photocatalytic substance in the organic compound layer, the organic compound is decomposed (destroyed) using the photocatalytic function of the photocatalytic substance to roughen the organic compound in the layer, and the element layer is peeled from the substrate. Therefore, since it is not necessary to apply a large force to the element layer for peeling, the element is not destroyed in the peeling process, and can be freely transferred to various substrates with a good shape.

Therefore, since it can be freely transferred to various substrates, the range of substrate material selectivity is widened. In addition, an inexpensive material can be selected as the substrate, so that not only a wide function can be provided depending on the application, but also a semiconductor device can be manufactured at low cost.

As the substrate 758, the substrate 766, the substrate 768, the substrate 778, and the substrate 798, a glass substrate, a flexible substrate, a quartz substrate, or the like can be used. The flexible substrate is a substrate that can be bent (flexible), and examples thereof include a plastic substrate made of polycarbonate, polyarylate, polyethersulfone, or the like. It is also possible to use films (made of polypropylene, polyester, vinyl, polyvinyl fluoride, vinyl chloride, etc.), paper made of fibrous materials, substrate films (polyester, polyamide, inorganic vapor deposition film, papers, etc.), etc. it can.

The materials and formation methods of the first electrode layer, the second electrode layer, and the electroluminescent layer described in this embodiment are similarly performed using any of the materials and formation methods described in Embodiment 1 above. be able to.

As the partition wall (insulating layer) 765 and the partition wall (insulating layer) 775, silicon oxide, silicon nitride, silicon oxynitride, aluminum oxide, aluminum nitride, aluminum oxynitride, and other inorganic insulating materials, acrylic acid, methacrylic acid, and the like Or a heat resistant polymer such as polyimide, aromatic polyamide, polybenzimidazole, or a siloxane resin. Further, a resin material such as a vinyl resin such as polyvinyl alcohol or polyvinyl butyral, an epoxy resin, a phenol resin, a novolac resin, an acrylic resin, a melamine resin, or a urethane resin is used. Further, an organic material such as benzocyclobutene, parylene, fluorinated arylene ether, polyimide, a composition material containing a water-soluble homopolymer and a water-soluble copolymer, or the like may be used. As a manufacturing method, a vapor deposition method such as a plasma CVD method or a thermal CVD method, or a sputtering method can be used. Alternatively, a droplet discharge method or a printing method (a method for forming a pattern such as screen printing or offset printing) can be used. A film obtained by a coating method, an SOG film, or the like can also be used.

Further, after a conductive layer, an insulating layer, or the like is formed by discharging a composition by a droplet discharge method, the surface may be flattened by pressing with a pressure in order to improve the flatness. As a pressing method, unevenness may be reduced by scanning a roller-shaped object on the surface, or the surface may be pressed with a flat plate-like object. A heating step may be performed when pressing. Alternatively, the surface may be softened or melted with a solvent or the like, and the surface irregularities may be removed with an air knife. Further, polishing may be performed using a CMP method. This step can be applied when the surface is flattened when unevenness is generated by the droplet discharge method.

According to the present invention, a semiconductor device and a display device can be manufactured by using a peeling process so that the transfer process can be performed in a good state while maintaining the shape and characteristics before peeling. Therefore, a highly reliable semiconductor device can be manufactured with high yield without complicating the device and the process.

(Embodiment 3)
In this embodiment, a semiconductor device including a transistor manufactured using the transposition process of the present invention will be described.

In FIG. 9, an organic compound layer 516 containing a photocatalytic substance is provided between a light-transmitting insulating layer 512 provided over a light-transmitting substrate 500 and an element layer including transistors 510a and 510b. Yes. For the first substrate 500 and the insulating layer 512, a material which can withstand the process (such as heat treatment) in the process for forming the display element included in the element layer and which is suitable for a manufacturing process condition may be selected. The organic compound layer 516 containing the photocatalytic substance contains a photocatalytic substance.

After that, the photocatalytic substance is irradiated with light 581 from the light source 580 through the first substrate 500 and the insulating layer 512 from the light-transmitting first substrate 500 side (see FIG. 9B).

The photocatalytic substance absorbs light 581 and activates it. The active energy acts on the surrounding organic compound contained in the organic compound layer 516 containing the photocatalytic substance, and as a result, the physical properties of the organic compound are changed and modified. That is, the carbon-hydrogen bond and carbon-carbon bond of the organic compound are separated by the energy (oxidizing power) of the activated photocatalytic substance, and a part of the organic compound becomes carbon dioxide and water to be degassed. As a result, the organic compound layer 516 containing the photocatalytic substance becomes rough, and an organic compound layer 517 containing the photocatalytic substance is obtained.

A second substrate 518 is provided over the insulating film 509 and the insulating layer 511 which include the transistors 510a and 510b (see FIG. 9C). The second substrate 518 may be bonded to the element layer using an adhesive layer or the like, or a protective layer such as a resin layer may be directly formed on the element layer.

When force is applied to transfer the element layer including the transistors 510a and 510b to the second substrate 518 side, the organic compound layer 517 including the photocatalytic substance is weakened in strength, so that the element layer is formed inside the layer. The organic compound layer 519b containing the photocatalytic substance on the side and the organic compound layer 519a containing the photocatalytic substance on the substrate side are separated (divided). Accordingly, the element layer including the transistors 510 a and 510 b can be peeled from the first substrate 500.

In FIG. 9 in this embodiment mode, the transistors 510a and 510b are channel etch inverse stagger transistors. In FIG. 9, transistors 510a and 510b include gate electrode layers 502a and 502b, a gate insulating layer 508, semiconductor layers 504a and 504b, semiconductor layers 503a, 503b, 503c, and 503d having one conductivity type, a source electrode layer or a drain electrode layer. Wiring layers 505a, 505b, 505c, and 505d.

As a material for forming the semiconductor layer, an amorphous semiconductor (hereinafter also referred to as “amorphous semiconductor: AS”) manufactured by a vapor deposition method or a sputtering method using a semiconductor material gas typified by silane or germane is used. A polycrystalline semiconductor obtained by crystallizing a crystalline semiconductor using light energy or thermal energy, or a semi-amorphous (also referred to as microcrystal or microcrystal; hereinafter, also referred to as “SAS”) semiconductor can be used.

SAS is a semiconductor having an intermediate structure between amorphous and crystalline structures (including single crystal and polycrystal) and having a third state that is stable in terms of free energy and has a short-range order and a lattice. It includes a crystalline region with strain. SAS is formed by glow discharge decomposition (plasma CVD) of a gas containing silicon. As a gas containing silicon, SiH ₄ , Si ₂ H ₆ , SiH ₂ Cl ₂ , SiHCl ₃ , SiCl ₄ , SiF _4, or the like can be used. Further, F ₂ and GeF ₄ may be mixed. The gas containing silicon may be diluted with H ₂ , or H ₂ and one or more kinds of rare gas elements selected from He, Ar, Kr, and Ne. Further, by adding a rare gas element such as helium, argon, krypton, or neon to further promote lattice distortion, stability is improved and a favorable SAS can be obtained. In addition, a SAS layer formed of a hydrogen-based gas may be stacked on a SAS layer formed of a fluorine-based gas as a semiconductor film.

A typical example of an amorphous semiconductor is hydrogenated amorphous silicon, and a typical example of a crystalline semiconductor is polysilicon. Polysilicon (polycrystalline silicon) is mainly made of so-called high-temperature polysilicon using polysilicon formed through a process temperature of 800 ° C. or more as a main material, or polysilicon formed at a process temperature of 600 ° C. or less. And so-called low-temperature polysilicon, and polysilicon crystallized by adding an element that promotes crystallization. Needless to say, as described above, a semi-amorphous semiconductor or a semiconductor containing a crystal phase in part of a semiconductor film can also be used.

In the case where a crystalline semiconductor film is used as the semiconductor film, a method for manufacturing the crystalline semiconductor film can be a known method (laser crystallization method, thermal crystallization method, or heat using an element that promotes crystallization such as nickel. A crystallization method or the like may be used. In addition, a microcrystalline semiconductor that is a SAS can be crystallized by laser irradiation to improve crystallinity. In the case where an element for promoting crystallization is not introduced, the concentration of hydrogen contained in the amorphous semiconductor film is set to 1 × by heating at 500 ° C. for 1 hour in a nitrogen atmosphere before irradiating the amorphous semiconductor film with laser light. Release to 10 ²⁰ atoms / cm ³ or less. This is because when an amorphous semiconductor film containing a large amount of hydrogen is irradiated with laser light, the amorphous semiconductor film is destroyed. As the heat treatment for crystallization, a heating furnace, laser irradiation, irradiation with light emitted from a lamp (also referred to as lamp annealing), or the like can be used. There are RTA methods such as a GRTA (Gas Rapid Thermal Anneal) method and an LRTA (Lamp Rapid Thermal Anneal) method as heating methods. GRTA is a method for performing heat treatment using a high-temperature gas, and LRTA is a method for performing heat treatment with lamp light.

Further, in the crystallization step of crystallizing the amorphous semiconductor layer to form the crystalline semiconductor layer, an element for promoting crystallization (also referred to as a catalyst element or a metal element) is added to the amorphous semiconductor layer, and heat treatment ( Crystallization may be carried out at 550 ° C. to 750 ° C. for 3 minutes to 24 hours. Elements that promote crystallization include iron (Fe), nickel (Ni), cobalt (Co), ruthenium (Ru), rhodium (Rh), palladium (Pd), osmium (Os), iridium (Ir), and platinum. One or more types selected from (Pt), copper (Cu), and gold (Au) can be used.

The method of introducing the metal element into the amorphous semiconductor film is not particularly limited as long as the metal element can be present on the surface of the amorphous semiconductor film or inside the amorphous semiconductor film. For example, sputtering, CVD, A plasma treatment method (including a plasma CVD method), an adsorption method, or a method of applying a metal salt solution can be used. Among these, the method using a solution is simple and useful in that the concentration of the metal element can be easily adjusted. At this time, in order to improve the wettability of the surface of the amorphous semiconductor film and to spread the aqueous solution over the entire surface of the amorphous semiconductor film, irradiation with UV light in an oxygen atmosphere, thermal oxidation method, hydroxy radical It is desirable to form an oxide film by treatment with ozone water or hydrogen peroxide.

In order to remove or reduce an element that promotes crystallization from the crystalline semiconductor layer, a semiconductor layer containing an impurity element is formed in contact with the crystalline semiconductor layer and functions as a gettering sink. As the impurity element, an impurity element imparting n-type conductivity, an impurity element imparting p-type conductivity, a rare gas element, or the like can be used. For example, phosphorus (P), nitrogen (N), arsenic (As), antimony (Sb ), Bismuth (Bi), boron (B), helium (He), neon (Ne), argon (Ar), Kr (krypton), and Xe (xenon) can be used. A semiconductor layer containing a rare gas element is formed over the crystalline semiconductor layer containing an element that promotes crystallization, and heat treatment (at 550 ° C. to 750 ° C. for 3 minutes to 24 hours) is performed. The element that promotes crystallization contained in the crystalline semiconductor layer moves into the semiconductor layer containing a rare gas element, and the element that promotes crystallization in the crystalline semiconductor layer is removed or reduced. After that, the semiconductor layer containing a rare gas element that has become a gettering sink is removed.

Laser irradiation can be performed by relatively scanning the laser and the semiconductor film. In laser irradiation, a marker can be formed in order to superimpose beams with high accuracy and to control the laser irradiation start position and laser irradiation end position. The marker may be formed on the substrate simultaneously with the amorphous semiconductor film.

When laser irradiation is used, a continuous wave laser beam (CW (continuous-wave) laser beam) or a pulsed laser beam (pulse laser beam) can be used. The laser beam that can be used here is a gas laser such as an Ar laser, a Kr laser, or an excimer laser, single crystal YAG, YVO ₄ , forsterite (Mg ₂ SiO ₄ ), YAlO ₃ , GdVO ₄ , or polycrystalline ( (Ceramics) YAG, Y ₂ O ₃ , YVO ₄ , YAlO ₃ , GdVO ₄ with one or more of Nd, Yb, Cr, Ti, Ho, Er, Tm, Ta added as dopants A laser oscillated from one or more of laser, glass laser, ruby laser, alexandrite laser, Ti: sapphire laser, copper vapor laser, or gold vapor laser as a medium can be used. By irradiating the fundamental wave of such a laser beam, or the second to fourth harmonics of these fundamental waves, a crystal having a large grain size can be obtained. For example, a second harmonic (532 nm) or a third harmonic (355 nm) of an Nd: YVO ₄ laser (fundamental wave 1064 nm) can be used. This laser can be emitted by CW or pulsed oscillation. When injected at a CW, the power density of the laser is about 0.01 to 100 MW / cm ² (preferably 0.1 to 10 MW / cm ²⁾ is required. Then, irradiation is performed at a scanning speed of about 10 to 2000 cm / sec.

Note that single crystal YAG, YVO ₄ , forsterite (Mg ₂ SiO ₄ ), YAlO ₃ , GdVO ₄ , or polycrystalline (ceramic) YAG, Y ₂ O ₃ , YVO ₄ , YAlO ₃ , GdVO ₄ , dopants Nd, Yb, Cr, Ti, Ho, Er, Tm, Ta, a laser using a medium added with one or more, an Ar ion laser, or a Ti: sapphire laser should oscillate continuously It is also possible to perform pulse oscillation at an oscillation frequency of 10 MHz or more by performing Q switch operation, mode synchronization, or the like. When the laser beam is oscillated at an oscillation frequency of 10 MHz or more, the semiconductor film is irradiated with the next pulse during the period from when the semiconductor film is melted by the laser to solidification. Therefore, unlike the case of using a pulse laser having a low oscillation frequency, the solid-liquid interface can be continuously moved in the semiconductor film, so that crystal grains continuously grown in the scanning direction can be obtained.

When ceramic (polycrystal) is used as the medium, it is possible to form the medium in a free shape in a short time and at low cost. When a single crystal is used, a cylindrical medium having a diameter of several millimeters and a length of several tens of millimeters is usually used. However, when ceramic is used, a larger one can be made.

Since the concentration of dopants such as Nd and Yb in the medium that directly contributes to light emission cannot be changed greatly regardless of whether it is a single crystal or a polycrystal, there is a certain limit to improving the laser output by increasing the concentration. However, in the case of ceramic, since the size of the medium can be remarkably increased as compared with the single crystal, the output can be greatly improved.

Further, in the case of ceramic, a medium having a parallelepiped shape or a rectangular parallelepiped shape can be easily formed. When a medium having such a shape is used to cause oscillation light to travel in a zigzag manner inside the medium, the oscillation optical path can be made longer. As a result, amplification is increased and oscillation can be performed with high output. Further, since the laser beam emitted from the medium having such a shape has a quadrangular cross-sectional shape at the time of emission, it is advantageous for shaping into a linear beam as compared with a round beam. By shaping the emitted laser beam using an optical system, it is possible to easily obtain a linear beam having a short side length of 1 mm or less and a long side length of several mm to several m. Become. In addition, by irradiating the medium with the excitation light uniformly, the linear beam has a uniform energy distribution in the long side direction. Further, the laser may be irradiated with an incident angle θ (0 <θ <90 degrees) with respect to the semiconductor film. This is because laser interference can be prevented.

By irradiating the semiconductor film with this linear beam, the entire surface of the semiconductor film can be annealed more uniformly. When uniform annealing is required up to both ends of the linear beam, it is necessary to arrange a slit at both ends to shield the energy attenuating portion.

When a semiconductor film is annealed using a linear beam with uniform intensity obtained in this way and a display device is manufactured using this semiconductor film, the characteristics of the display device are good and uniform.

Further, laser light may be irradiated in an inert gas atmosphere such as a rare gas or nitrogen. Accordingly, the surface roughness of the semiconductor can be suppressed by laser light irradiation, and variations in threshold values caused by variations in interface state density can be suppressed.

Crystallization of the amorphous semiconductor film may be a combination of heat treatment and crystallization by laser light irradiation, or may be performed multiple times by heat treatment or laser light irradiation alone.

The gate electrode layer can be formed by a technique such as sputtering, vapor deposition, or CVD. The gate electrode layer is an element selected from tantalum (Ta), tungsten (W), titanium (Ti), molybdenum (Mo), aluminum (Al), copper (Cu), chromium (Cr), neodymium (Nd), or What is necessary is just to form with the alloy material or compound material which has the said element as a main component. Alternatively, a semiconductor film typified by a polycrystalline silicon film doped with an impurity element such as phosphorus, or an AgPdCu alloy may be used for the gate electrode layer. The gate electrode layer may be a single layer or a stacked layer.

In this embodiment mode, the gate electrode layer is formed to have a tapered shape; however, the present invention is not limited thereto, and the gate electrode layer has a stacked structure, and only one layer has a tapered shape, and the other is anisotropic. You may have a vertical side surface by an etching. The taper angle may also be different between the stacked gate electrode layers, or may be the same. By having a tapered shape, the coverage of a film stacked thereon is improved and defects are reduced, so that reliability is improved.

The source electrode layer or the drain electrode layer can be formed by forming a conductive film by a PVD method, a CVD method, an evaporation method, or the like and then etching the conductive film into a desired shape. In addition, a conductive layer can be selectively formed at a predetermined place by a droplet discharge method, a printing method, a dispenser method, an electroplating method, or the like. Furthermore, a reflow method or a damascene method may be used. The source electrode layer or drain electrode layer is made of Ag, Au, Cu, Ni, Pt, Pd, Ir, Rh, W, Al, Ta, Mo, Cd, Zn, Fe, Ti, Zr, Ba or other metals, It is formed using Si, Ge, an alloy thereof, or a nitride thereof. Moreover, it is good also as these laminated structures.

As the insulating layers 512, 511, and 509, silicon oxide, silicon nitride, silicon oxynitride, aluminum oxide, aluminum nitride, aluminum oxynitride, and other inorganic insulating materials, acrylic acid, methacrylic acid, and derivatives thereof, or polyimide ( Polyimide), aromatic polyamide, heat-resistant polymer such as polybenzimidazole, or siloxane resin may be used. Further, a resin material such as a vinyl resin such as polyvinyl alcohol or polyvinyl butyral, an epoxy resin, a phenol resin, a novolac resin, an acrylic resin, a melamine resin, or a urethane resin is used. Further, an organic material such as benzocyclobutene, parylene, fluorinated arylene ether, polyimide, a composition material containing a water-soluble homopolymer and a water-soluble copolymer, or the like may be used. As a manufacturing method, a vapor deposition method such as a plasma CVD method or a thermal CVD method, or a sputtering method can be used. Alternatively, a droplet discharge method or a printing method (a method for forming a pattern such as screen printing or offset printing) can be used. A film obtained by a coating method, an SOG film, or the like can also be used.

Further, after a conductive layer, an insulating layer, or the like is formed by discharging a composition by a droplet discharge method, the surface may be flattened by pressing with a pressure in order to improve the flatness. As a pressing method, unevenness may be reduced by scanning a roller-shaped object on the surface, or the surface may be pressed with a flat plate-like object. A heating step may be performed when pressing. Alternatively, the surface may be softened or melted with a solvent or the like, and the surface irregularities may be removed with an air knife. Further, polishing may be performed using a CMP method. This step can be applied when the surface is flattened when unevenness is generated by the droplet discharge method.

Without being limited to this embodiment mode, the thin film transistor may have a single gate structure in which one channel formation region is formed, a double gate structure in which two channel formation regions are formed, or a triple gate structure in which three channel formation regions are formed. The thin film transistor in the peripheral driver circuit region may have a single gate structure, a double gate structure, or a triple gate structure.

Note that the gate insulating film is not limited to the method for manufacturing the thin film transistor described in this embodiment mode, and may be a top gate type (eg, a forward stagger type or a coplanar type), a bottom gate type (eg, a reverse coplanar type), or a gate insulating film above and below a channel region. The present invention can also be applied to a dual gate type or other structure having two gate electrode layers arranged via each other.

In this embodiment mode, an example in which a flexible counter substrate is attached after light irradiation to the photocatalyst material is described. However, even if the photocatalyst material is irradiated with light after the substrate to be transferred is attached to the element layer, Good.

In the present invention, by dispersing the photocatalytic substance in the organic compound layer, the organic compound is decomposed (destroyed) using the photocatalytic function of the photocatalytic substance to roughen the organic compound in the layer, and the element layer is peeled from the substrate. Therefore, since it is not necessary to apply a large force to the element layer for peeling, the element is not destroyed in the peeling process, and can be freely transferred to various substrates with a good shape.

Therefore, since it can be freely transferred to various substrates, the range of substrate material selectivity is widened. In addition, an inexpensive material can be selected as the substrate, so that not only a wide function can be provided depending on the application, but also a semiconductor device can be manufactured at low cost.

(Embodiment 4)
In this embodiment mode, a display device having a structure different from that of Embodiment Mode 2 will be described. Specifically, the case where the structure of the display device is an active matrix type is described.

10A is a top view of the display device, and FIG. 10B is a cross-sectional view taken along line EF in FIG. 10A. In FIG. 10A, the electroluminescent layer 532, the second electrode layer 533, and the insulating layer 534 are omitted and not shown, but are provided as shown in FIG. 10B.

A first wiring extending in the first direction and a second wiring extending in a second direction perpendicular to the first direction are provided in a matrix. The first wiring is connected to the source electrode or the drain electrode of the transistor 521, and the second wiring is connected to the gate electrode of the transistor 521. Further, the first electrode layer 531 is connected to the source electrode or the drain electrode of the transistor 521 which is not connected to the first wiring, and the first electrode layer 531, the electroluminescent layer 532, and the second electrode layer 533 are connected. A light emitting element 530 is provided by a stacked structure. A partition wall (insulating layer) 528 is provided between each adjacent light emitting element, and an electroluminescent layer 532 and a second electrode layer 533 are stacked over the first electrode layer and the partition wall (insulating layer) 528. Yes. An insulating layer 534 serving as a protective layer is provided over the second electrode layer 533. Further, the inverted staggered thin film transistor illustrated in FIG. 9 is used as the transistor 521 (see FIGS. 10B and 11A).

10B, the light-emitting element is provided over the third substrate 540 with an organic compound layer 539b containing a photocatalytic substance, and includes an insulating layer 523, an insulating layer 526, an insulating layer 527, a partition wall (insulating Layer) 528 and a transistor 521.

FIG. 11 illustrates a manufacturing process of the display device in FIGS. In FIG. 11, an organic compound layer 524 including a photocatalytic substance is provided between the first substrate 520 and an element layer including the transistor 521 and the light-emitting element 530. As the first substrate 520, a substrate that can withstand the process (such as heat treatment) in the process for forming the display element included in the element layer and that is suitable for the manufacturing process conditions may be selected. The organic compound layer 524 containing the photocatalytic substance contains a photocatalytic substance.

After that, the photocatalytic substance is irradiated with light 581 from the light source 580 through the first substrate 520 from the light-transmitting first substrate 520 side (see FIG. 11B).

The photocatalytic substance absorbs light 581 and activates it. The active energy acts on the surrounding organic compound contained in the organic compound layer 524 containing the photocatalytic substance, and as a result, the physical properties of the organic compound are changed and modified. That is, the carbon-hydrogen bond and carbon-carbon bond of the organic compound are separated by the energy (oxidizing power) of the activated photocatalytic substance, and a part of the organic compound becomes carbon dioxide and water to be degassed. As a result, the organic compound layer 524 containing the photocatalytic substance becomes rough, and an organic compound layer 537 containing the photocatalytic substance is obtained.

A second substrate 538 is provided over the insulating layer 534 which is an element layer including the transistor 521 and the light-emitting element 530 (see FIG. 11C). The second substrate 538 may be bonded to the element layer using an adhesive layer or the like, or a protective layer such as a resin layer may be directly formed on the element layer.

When force is applied to transfer the element layer including the transistor 521 and the light-emitting element 530 to the second substrate 538 side, the organic compound layer 537 including a photocatalytic substance has a weakened strength, so The organic compound layer 539b containing the photocatalytic substance on the element layer side and the organic compound layer 539a containing the photocatalytic substance on the substrate side are separated (divided). Accordingly, the element layer including the transistor 521 and the light-emitting element 530 can be peeled from the first substrate 520.

FIG. 12 shows a manufacturing process of an active matrix liquid crystal display device to which the present invention is applied. In FIG. 12, an organic compound layer 566 containing a photocatalytic substance is formed, a first substrate 550 provided with a multi-gate transistor 551, a pixel electrode layer 560, an insulating layer 561 functioning as an alignment film, and an alignment film The insulating substrate 563 that functions, the counter electrode layer 564, and the second substrate 568 provided with the coloring layer 565 that functions as a color filter are opposed to each other with the liquid crystal layer 562 interposed therebetween. An organic compound layer 566 containing a photocatalytic substance is provided between the first substrate 550 and an element layer including the transistor 551 and the pixel electrode layer 560. As the first substrate 550, a substrate that can withstand a process (such as heat treatment) in a process for forming a liquid crystal display element included in the element layer and that is suitable for a manufacturing process condition may be selected. The organic compound layer 566 containing the photocatalytic substance contains a photocatalytic substance.

After that, the photocatalytic substance is irradiated with light 581 from the light source 580 through the first substrate 550 from the light-transmitting first substrate 550 side (see FIG. 12B).

The photocatalytic substance absorbs light 581 and activates it. The active energy acts on the surrounding organic compound contained in the organic compound layer 566 containing the photocatalytic substance, and as a result, the physical properties of the organic compound are changed and modified. That is, the carbon-hydrogen bond and carbon-carbon bond of the organic compound are separated by the energy (oxidizing power) of the activated photocatalytic substance, and a part of the organic compound becomes carbon dioxide and water to be degassed. As a result, the organic compound layer 566 containing the photocatalytic substance becomes rough, and an organic compound layer 570 containing the photocatalytic substance is obtained.

When force is applied to transfer the element layer including the transistor 551 and the liquid crystal display element to the second substrate 568 side, the organic compound layer 566 including the photocatalytic substance is weakened in strength. The organic compound layer 569b containing the photocatalytic substance on the element layer side and the organic compound layer 569a containing the photocatalytic substance on the substrate side are separated (divided). Accordingly, the element layer including the transistor 551 and the display element can be peeled from the first substrate 550 (see FIG. 12C).

In the present invention, by dispersing the photocatalytic substance in the organic compound layer, the organic compound is decomposed (destroyed) using the photocatalytic function of the photocatalytic substance to roughen the organic compound in the layer, and the element layer is peeled from the substrate. Therefore, since it is not necessary to apply a large force to the element layer for peeling, the element is not destroyed in the peeling process, and can be freely transferred to various substrates with a good shape.

Therefore, since it can be freely transferred to various substrates, the range of substrate material selectivity is widened. In addition, an inexpensive material can be selected as the substrate, so that not only a wide function can be provided depending on the application, but also a semiconductor device can be manufactured at low cost.

FIG. 13 shows a manufacturing process of an active matrix electronic paper to which the present invention is applied. Although FIG. 13 shows an active matrix type, the present invention can also be applied to a passive matrix type.

Although FIG. 12 shows an example using a liquid crystal display element as a display element, a display device using a twisting ball display method may be used. In the twist ball display system, spherical particles that are separately painted in white and black are arranged between the first electrode layer and the second electrode layer, and a potential difference is generated between the first electrode layer and the second electrode layer. In this method, display is performed by controlling the orientation of the spherical particles.

An organic compound layer 583 containing a photocatalytic substance is provided between the light-transmitting substrate 596 and the element layer containing the spherical particles 589. As the first substrate 596, a substrate that can withstand a process (such as heat treatment) in a process for forming a display element included in the element layer and that is suitable for a manufacturing process condition may be selected. The organic compound layer 524 containing the photocatalytic substance contains a photocatalytic substance.

The transistor 597 is an inverted coplanar thin film transistor and includes a gate electrode layer 582, a gate insulating layer 584, a wiring layer 585 a, a wiring layer 585 b, and a semiconductor layer 586. The wiring layer 585b is in contact with and electrically connected to the first electrode layers 587a and 587b through an opening formed in the insulating layer 598. Between the first electrode layers 587a and 587b and the second electrode layer 588, spherical particles 589 including a cavity 594 having a black region 590a and a white region 590 and filled with a liquid are provided. The periphery of the spherical particles 589 is filled with a filler 595 such as a resin (see FIG. 13).

After that, the light catalytic converter material is irradiated with light 581 from the light source 580 through the first substrate 596 from the light-transmitting first substrate 596 side (see FIG. 13B).

The photocatalytic substance absorbs light 581 and activates it. The active energy acts on the surrounding organic compound contained in the organic compound layer 583 containing the photocatalytic substance, and as a result, the physical properties of the organic compound are changed and modified. That is, the carbon-hydrogen bond and carbon-carbon bond of the organic compound are separated by the energy (oxidizing power) of the activated photocatalytic substance, and a part of the organic compound becomes carbon dioxide and water to be degassed. As a result, the organic compound layer 583 containing a photocatalytic substance becomes rough, and an organic compound layer 591 containing a photocatalytic substance is obtained.

When force is applied to transfer the element layer including the transistor 597 and the display element to the second substrate 592 side, the organic compound layer 591 including the photocatalytic substance is weakened in strength, so the element is formed inside the layer. The organic compound layer 593b containing the photocatalytic substance on the layer side and the organic compound layer 593a containing the photocatalytic substance on the substrate side are separated (divided). Accordingly, the element layer including the transistor 597 and the spherical particles 589 can be peeled from the first substrate 596 (see FIG. 13C).

In the present invention, by dispersing the photocatalytic substance in the organic compound layer, the organic compound is decomposed (destroyed) using the photocatalytic function of the photocatalytic substance to roughen the organic compound in the layer, and the element layer is peeled from the substrate. Therefore, since it is not necessary to apply a large force to the element layer for peeling, the element is not destroyed in the peeling process, and can be freely transferred to various substrates with a good shape.

Therefore, since it can be freely transferred to various substrates, the range of substrate material selectivity is widened. In addition, an inexpensive material can be selected as the substrate, so that not only a wide function can be provided depending on the application, but also a semiconductor device can be manufactured at low cost.

Further, instead of the twisting ball, an electrophoretic element can be used. A microcapsule having a diameter of about 10 μm to 200 μm in which transparent liquid, positively charged white microparticles, and negatively charged black microparticles are enclosed is used. In the microcapsule provided between the first electrode layer and the second electrode layer, when an electric field is applied by the first electrode layer and the second electrode layer, the white particles and the black particles are in opposite directions. And can display white or black. A display element using this principle is an electrophoretic display element, and is generally called electronic paper. Since the electrophoretic display element has higher reflectance than the liquid crystal display element, an auxiliary light is unnecessary, power consumption is small, and the display portion can be recognized even in a dim place. In addition, even when power is not supplied to the display unit, it is possible to retain the image once displayed. Therefore, even when the semiconductor device with a display function is moved away from the radio wave source, it is displayed. The image can be stored.

The transistor may have any structure as long as it can function as a switching element. As the semiconductor layer, various semiconductors such as an amorphous semiconductor, a crystalline semiconductor, a polycrystalline semiconductor, and a microcrystalline semiconductor can be used, and an organic transistor may be formed using an organic compound.

According to the present invention, a semiconductor device and a display device can be manufactured by using a peeling process so that the transfer process can be performed in a good state while maintaining the shape and characteristics before peeling. Therefore, a highly reliable semiconductor device can be manufactured with high yield without complicating the device and the process.

(Embodiment 5)
An embodiment of the present invention will be described with reference to FIG. This embodiment shows an example in which a channel-etched inverted staggered thin film transistor is used as a thin film transistor and an interlayer insulating layer is not formed over the transistor in the display device. Therefore, repetitive description of the same portion or a portion having a similar function is omitted. 14A is a top view of a light-emitting display device manufactured using the transposition process of the present invention, and FIG. 14B is a cross-sectional view of FIG.

As shown in FIGS. 14A and 14B, the pixel portion 655, the drive circuit region 651a that is a scan line driver circuit, the drive circuit region 651b that is a scan line driver circuit, and the drive circuit region 653 are separated by a sealant 612. A drive circuit region 652 which is a signal line driver circuit which is sealed between the substrate 600 and the sealing substrate 610 and is formed on the substrate 600 by an IC driver is provided. Over a substrate 600, a driving circuit region 653 has an inverted staggered thin film transistor 601, an inverted staggered thin film transistor 602, a pixel portion 655 has an inverted staggered thin film transistor 603, a gate insulating layer 605, an insulating film 606, an insulating layer 609, and a first electrode. A light-emitting element 650 which is a stack of the layer 604, the electroluminescent layer 607, and the second electrode layer 608; a filler 611; a sealing substrate 610; a sealing material 612 in the sealing region; a terminal electrode layer 613; A conductive layer 614 and an FPC 615 are provided.

In the present invention, by dispersing the photocatalytic substance in the organic compound layer, the organic compound is decomposed (destroyed) using the photocatalytic function of the photocatalytic substance to roughen the organic compound in the layer, and the element layer is peeled from the substrate. Therefore, since it is not necessary to apply a large force to the element layer for peeling, the element is not destroyed in the peeling process, and can be freely transferred to various substrates with a good shape. The remaining layer on the element layer side after peeling of the organic compound layer containing the photocatalytic substance is the organic compound layer 630 containing the photocatalytic substance. The organic compound layer 630 containing a photocatalytic substance may be removed by polishing or the like after being transferred to the sealing substrate 610.

Therefore, since it can be freely transferred to various substrates, the range of substrate material selectivity is widened. In addition, an inexpensive material can be selected as the substrate, so that not only a wide function can be provided depending on the application, but also a semiconductor device can be manufactured at low cost.

The gate electrode layer, the source electrode layer, and the drain electrode layer of the inverted staggered thin film transistor 601, the inverted staggered thin film transistor 602, and the inverted staggered thin film transistor 603 manufactured in this embodiment are formed by a droplet discharge method. The droplet discharge method is a method in which a composition having a liquid conductive material is discharged and solidified by drying or baking to form a conductive layer or an electrode layer. An insulating layer can also be formed by discharging a composition containing an insulating material and solidifying it by drying or baking. Since a structure of the display device such as a conductive layer or an insulating layer can be formed selectively, the process can be simplified and material loss can be prevented, so that the display device can be manufactured with low cost and high productivity.

The droplet discharge means used in the droplet discharge method is a general term for a device having means for discharging droplets such as a nozzle having a composition discharge port and a head having one or a plurality of nozzles. The diameter of the nozzle provided in the droplet discharge means is set to 0.02 to 100 μm (preferably 30 μm or less), and the discharge amount of the composition discharged from the nozzle is 0.001 pl to 100 pl (preferably 0). .1pl or more and 40pl or less, more preferably 10pl or less). The discharge amount increases in proportion to the size of the nozzle diameter. In addition, the distance between the object to be processed and the nozzle outlet is preferably as close as possible in order to drop it at a desired location, preferably about 0.1 to 3 mm (preferably about 1 mm or less). Set.

When forming a film (insulating film, conductive film, or the like) using a droplet discharge method, a composition containing a film material processed into particles is discharged, and is fused and fused and solidified by firing. A film is formed. In a film formed by discharging and baking a composition containing a conductive material in this manner, a film formed by a sputtering method or the like often has a columnar structure, but has many grain boundaries. Often exhibits a polycrystalline state.

A composition in which a conductive material is dissolved or dispersed in a solvent is used as the composition discharged from the discharge port. Conductive materials include metals such as Ag, Au, Cu, Ni, Pt, Pd, Ir, Rh, W, and Al, metal sulfides of Cd and Zn, and oxides such as Fe, Ti, Ge, Zr, and Ba Correspond to silver halide fine particles or dispersible nanoparticles. The conductive material may be a mixture thereof. As these transparent conductive films, indium tin oxide (ITO), ITSO containing indium tin oxide and silicon oxide, organic indium, organic tin, zinc oxide, titanium nitride, or the like can be used. Further, indium zinc oxide (IZO) containing zinc oxide (ZnO), zinc oxide (ZnO), ZnO doped with gallium (Ga), tin oxide (SnO ₂ ), tungsten oxide is included. Indium oxide, indium zinc oxide containing tungsten oxide, indium oxide containing titanium oxide, indium tin oxide containing titanium oxide, or the like may also be used. However, it is preferable to use a composition in which any of gold, silver and copper is dissolved or dispersed in a solvent in consideration of the specific resistance value, more preferably the composition discharged from the discharge port. It is preferable to use low resistance silver or copper. However, when silver or copper is used, a barrier film may be provided as a countermeasure against impurities. As the barrier film, a silicon nitride film or nickel boron (NiB) can be used.

The composition to be discharged is one obtained by dissolving or dispersing a conductive material in a solvent, but additionally contains a dispersant and a thermosetting resin. In particular, the thermosetting resin has a function of preventing generation of cracks and uneven baking during firing. Thus, the formed conductive layer may contain an organic material. The organic material contained varies depending on the heating temperature, atmosphere, and time. This organic material is a thermosetting resin of metal particles, a solvent, a dispersant, an organic resin that functions as a coating agent, etc., and typically, polyimide, acrylic, novolac resin, melamine resin, phenol resin, epoxy resin , Silicone resin, furan resin, diallyl phthalate resin, and other organic resins.

Alternatively, particles in which a conductive material is coated with another conductive material to form a plurality of layers may be used. For example, particles having a three-layer structure in which nickel boron (NiB) is coated around copper and silver is coated around it may be used. As the solvent, esters such as butyl acetate and ethyl acetate, alcohols such as isopropyl alcohol and ethyl alcohol, organic solvents such as methyl ethyl ketone and acetone, and water are used. The viscosity of the composition is preferably 20 mPa · s (cp) or less, in order to prevent the drying from occurring and to smoothly discharge the composition from the discharge port. The surface tension of the composition is preferably 40 mN / m or less. However, the viscosity and the like of the composition may be appropriately adjusted according to the solvent to be used and the application. As an example, the viscosity of a composition in which ITO, organic indium, or organic tin is dissolved or dispersed in a solvent is 5 to 20 mPa · s, the viscosity of a composition in which silver is dissolved or dispersed in a solvent is 5 to 20 mPa · s, The viscosity of the composition in which gold is dissolved or dispersed in a solvent is preferably set to 5 to 20 mPa · s.

The conductive layer may be a stack of a plurality of conductive materials. Alternatively, first, silver may be used as a conductive material, and a conductive layer may be formed by a droplet discharge method, followed by plating with copper or the like. Plating may be performed by electroplating or chemical (electroless) plating. For plating, the substrate surface may be immersed in a container filled with a solution having a plating material, but the substrate is placed at an angle (or vertically) so that the solution having the material to be plated flows on the substrate surface. It may be applied. When plating is performed so that the solution is applied while standing the substrate, there is an advantage that the process apparatus is reduced in size.

Although depending on the diameter of each nozzle and the desired pattern shape, the diameter of the conductor particles is preferably as small as possible for preventing nozzle clogging and producing a high-definition pattern. A particle size of 1 μm or less is preferred. The composition is formed by a known method such as an electrolytic method, an atomizing method, or a wet reduction method, and its particle size is generally about 0.01 to 10 μm. However, when formed by a gas evaporation method, the nanoparticles protected by the dispersant are as fine as about 7 nm, and these nanoparticles are aggregated in the solvent when the surface of each particle is covered with a coating agent. And stably disperse at room temperature and shows almost the same behavior as liquid. Therefore, it is preferable to use a coating agent.

The step of discharging the composition may be performed under reduced pressure. It is preferable to perform under reduced pressure because an oxide film or the like is not formed on the surface of the conductor. After discharging the composition, one or both steps of drying and baking are performed. The drying and firing steps are both heat treatment steps. For example, drying is performed at 100 degrees for 3 minutes, and firing is performed at 200 to 350 degrees for 15 minutes to 60 minutes. Time is different. The drying process and the firing process are performed under normal pressure or reduced pressure by laser light irradiation, rapid thermal annealing, a heating furnace, or the like. In addition, the timing which performs this heat processing is not specifically limited. In order to satisfactorily perform the drying and firing steps, the substrate may be heated, and the temperature at that time depends on the material of the substrate or the like, but is generally 100 to 800 degrees (preferably 200). ~ 350 degrees). By this step, the solvent in the composition is volatilized or the dispersant is chemically removed, and the surrounding resin is cured and contracted to bring the nanoparticles into contact with each other, thereby accelerating fusion and fusion.

For the laser light irradiation, a continuous wave or pulsed gas laser or solid-state laser may be used. Examples of the former gas laser include an excimer laser and a YAG laser, and examples of the latter solid-state laser include a laser using a crystal such as YAG, YVO ₄ , and GdVO ₄ doped with Cr, Nd, or the like. . Note that it is preferable to use a continuous wave laser because of the absorption rate of the laser light. Further, a laser irradiation method combining pulse oscillation and continuous oscillation may be used. However, depending on the heat resistance of the substrate 100, the heat treatment by laser light irradiation may be performed instantaneously within a few microseconds to several tens of seconds so as not to destroy the substrate 100. Instantaneous thermal annealing (RTA) uses an infrared lamp or a halogen lamp that irradiates ultraviolet light or infrared light in an inert gas atmosphere, and rapidly raises the temperature for several minutes to several microseconds. This is done by applying heat instantaneously. Since this process is performed instantaneously, only the outermost thin film can be heated, and the underlying film is not affected. That is, it does not affect a substrate having low heat resistance such as a plastic substrate.

Further, after the conductive layer and the insulating layer are formed by discharging a liquid composition by a droplet discharge method, the surface may be flattened by pressing with a pressure in order to improve the flatness. As a pressing method, unevenness may be reduced by scanning a roller-shaped object on the surface, or the surface may be pressed with a flat plate-like object. A heating step may be performed when pressing. Alternatively, the surface may be softened or melted with a solvent or the like, and the surface irregularities may be removed with an air knife. Further, polishing may be performed using a CMP method. This step can be applied when the surface is flattened when unevenness is generated by the droplet discharge method.

In this embodiment mode, an amorphous semiconductor is used as a semiconductor layer, and a semiconductor layer having one conductivity type may be formed as needed. In this embodiment mode, an amorphous N-type semiconductor layer is stacked as a semiconductor layer and a semiconductor layer having one conductivity type. In addition, an N-type semiconductor layer is formed, and an NMOS structure of an n-channel TFT, a PMOS structure of a p-channel TFT having a p-type semiconductor layer, and a CMOS structure of an n-channel TFT and a p-channel TFT are manufactured. it can. In this embodiment mode, the inverted staggered thin film transistor 601 and the inverted staggered thin film transistor 603 are formed with n-channel TFTs, and the inverted staggered thin film transistor 602 is formed with a p-channel TFT, and the inverted staggered thin film transistor 601 is formed in the driver circuit region 653. The inverted staggered thin film transistor 602 has a CMOS structure.

Further, in order to impart conductivity, an n-channel TFT or a p-channel TFT can be formed by adding an element imparting conductivity by doping and forming an impurity region in the semiconductor layer. Instead of forming the N-type semiconductor layer, conductivity may be imparted to the semiconductor layer by performing plasma treatment with a PH ₃ gas.

Alternatively, an organic semiconductor material can be used as a semiconductor and can be formed by a printing method, a spray method, a spin coating method, a droplet discharge method, a dispenser method, or the like. In this case, the number of processes can be reduced because the etching process is not necessary. As the organic semiconductor, a low molecular material such as pentacene, a polymer material, or the like is used, and materials such as an organic dye or a conductive polymer material can also be used. The organic semiconductor material used in the present invention is preferably a π-electron conjugated polymer material whose skeleton is composed of conjugated double bonds. Typically, a soluble polymer material such as polythiophene, polyfluorene, poly (3-alkylthiophene), or a polythiophene derivative can be used.

According to the present invention, a semiconductor device and a display device can be manufactured by using a peeling process so that the transfer process can be performed in a good state while maintaining the shape and characteristics before peeling. Therefore, a highly reliable semiconductor device can be manufactured with high yield without complicating the device and the process.

(Embodiment 6)
An embodiment of the present invention will be described with reference to FIG. FIG. 15 shows a liquid crystal display device manufactured using the peeling process of the present invention.

15A is a top view of a liquid crystal display device manufactured using the transposition process of the present invention, and FIG. 15B is a cross-sectional view of FIG.

As shown in FIG. 15A, a pixel portion 256, a drive circuit region 258a which is a scan line driver circuit, and a drive circuit region 258b which is a scan line driver circuit are separated from each other between the substrate 200 and the counter substrate 210 by a sealant 282. A driving circuit region 257 which is a signal line driving circuit which is sealed in between and formed on the substrate 200 by an IC driver is provided. A transistor 220 is provided in the pixel portion 256. The substrate 200 is bonded to the peeled element layer and the organic compound layer 230 containing the photocatalytic substance, and may be made of a material that does not transmit light having a wavelength that activates the photocatalytic substance remaining in the element layer. . For the counter substrate 210 and the substrate 200, a flexible substrate, a resin film, or the like is used. In general, substrates made of synthetic resin have a concern that the heat-resistant temperature is lower than other substrates, but they can also be adopted by transposing after a manufacturing process using a substrate with high heat resistance. Is possible.

15 includes a transistor 220 which is an inverted staggered thin film transistor in a pixel portion, a pixel electrode layer 201, an insulating layer 202, an insulating layer 203 functioning as an alignment film, a liquid crystal layer 204, a spacer 281 over a substrate 200. An insulating layer 205 that functions as an alignment film, a counter electrode layer 206, a colored layer 208 that functions as a color filter, a black matrix 207, a counter substrate 210, a polarizing plate 231, a sealing material 282 in a sealing region, a terminal electrode layer 287, and anisotropic A conductive conductive layer 285 and an FPC 286 are provided.

A gate electrode layer, a source electrode layer, and a drain electrode layer of the transistor 220 which is an inverted staggered thin film transistor manufactured in this embodiment are formed by a droplet discharge method. The droplet discharge method is a method in which a composition having a liquid conductive material is discharged and solidified by drying or baking to form a conductive layer or an electrode layer. An insulating layer can also be formed by discharging a composition containing an insulating material and solidifying it by drying or baking. Since a structure of the display device such as a conductive layer or an insulating layer can be formed selectively, the process can be simplified and material loss can be prevented, so that the display device can be manufactured with low cost and high productivity.

In this embodiment mode, an amorphous semiconductor is used as a semiconductor layer, and a semiconductor layer having one conductivity type may be formed as needed. In this embodiment mode, an amorphous n-type semiconductor layer is stacked as a semiconductor layer and a semiconductor layer having one conductivity type. In addition, an n-type semiconductor layer is formed, an NMOS structure of an n-channel thin film transistor, a PMOS structure of a p-channel thin film transistor in which a p-type semiconductor layer is formed, and a CMOS structure of an n-channel thin film transistor and a p-channel thin film transistor. it can.

In order to impart conductivity, an element imparting conductivity is added by doping, and an impurity region is formed in the semiconductor layer, whereby an n-channel thin film transistor or a P-channel thin film transistor can be formed. Instead of forming the n-type semiconductor layer, conductivity may be imparted to the semiconductor layer by performing plasma treatment with PH ₃ gas.

In this embodiment, the transistor 220 is an n-channel inverted staggered thin film transistor. Alternatively, a channel-protective inverted staggered thin film transistor in which a protective layer is provided over the channel region of the semiconductor layer can be used.

Alternatively, an organic semiconductor material can be used as a semiconductor and can be formed by an evaporation method, a printing method, a spray method, a spin coating method, a droplet discharge method, a dispenser method, or the like. In this case, since the etching process is not necessarily required, the number of processes can be reduced. As the organic semiconductor, a low molecular material such as pentacene, a polymer material, or the like is used, and materials such as an organic dye or a conductive polymer material can also be used. The organic semiconductor material used in the present invention is preferably a π-electron conjugated polymer material whose skeleton is composed of conjugated double bonds. Typically, a soluble polymer material such as polythiophene, polyfluorene, poly (3-alkylthiophene), or a polythiophene derivative can be used.

In the pixel portion 256, a base film may be provided between the transistor 220 and the organic compound layer containing a photocatalytic substance. The base film may be either an inorganic insulating film or an organic insulating film, or a laminate thereof. In addition to the above method, the thin film transistor can be manufactured by a number of methods. For example, a crystalline semiconductor film is applied as the active layer. A gate electrode is provided over the crystalline semiconductor film with a gate insulating film interposed therebetween. An impurity element can be added to the active layer using the gate electrode. Thus, it is not necessary to form a mask for adding the impurity element by adding the impurity element using the gate electrode. The gate electrode can have a single-layer structure or a stacked structure. The impurity region can be a high concentration impurity region and a low concentration impurity region by controlling the concentration thereof. A thin film transistor having such a low concentration impurity region is referred to as an LDD (Light Doped Drain) structure. The low-concentration impurity region can be formed so as to overlap with the gate electrode. Such a thin film transistor is referred to as a GOLD (Gate Overlapped LDD) structure. The polarity of the thin film transistor is n-type by using phosphorus (P) or the like in the impurity region. When p-type is used, boron (B) or the like may be added. After that, an insulating film that covers the gate electrode and the like is formed. A dangling bond in the crystalline semiconductor film can be terminated by a hydrogen element mixed in the insulating film.

In order to further improve the flatness, an interlayer insulating film may be formed. As the interlayer insulating film, an organic material, an inorganic material, or a stacked structure thereof can be used. For example, silicon oxide, silicon nitride, silicon oxynitride, silicon nitride oxide, aluminum nitride, aluminum oxynitride, aluminum nitride oxide or aluminum oxide whose nitrogen content is higher than oxygen content, diamond like carbon (DLC), polysilazane, nitrogen content It can be formed of a material selected from carbon (CN), PSG (phosphorus glass), BPSG (phosphorus boron glass), alumina, and other inorganic insulating materials. An organic insulating material may be used, and the organic material may be either photosensitive or non-photosensitive, and polyimide, acrylic, polyamide, polyimide amide, resist, benzocyclobutene, siloxane resin, or the like can be used. . Note that a siloxane resin corresponds to a resin including a Si—O—Si bond. Siloxane has a skeleton structure formed of a bond of silicon (Si) and oxygen (O). As a substituent, an organic group containing at least hydrogen (for example, an alkyl group or an aromatic hydrocarbon) is used. A fluoro group may be used as a substituent. Alternatively, an organic group containing at least hydrogen and a fluoro group may be used as a substituent.
The

In addition, by using a crystalline semiconductor film, the pixel region and the driver circuit region can be formed over the same substrate.

Without being limited to this embodiment mode, the thin film transistor in the pixel region may have a single gate structure in which one channel formation region is formed, a double gate structure in which two channel formation regions are formed, or a triple gate structure in which three channel formation regions are formed. . The thin film transistor in the peripheral driver circuit region may have a single gate structure, a double gate structure, or a triple gate structure.

Note that there is no limitation on the method for manufacturing the thin film transistor described in this embodiment mode, and a top gate type (for example, a forward stagger type), a bottom gate type (for example, an inverted coplanar type), or a gate insulating film above and below a channel region. The present invention can also be applied to a dual gate type or other structure having two gate electrode layers arranged.

Next, an insulating layer 203 called an alignment film is formed by a printing method or a droplet discharge method so as to cover the pixel electrode layer 201 and the spacer 281. Note that the insulating layer 203 can be selectively formed by a screen printing method or an offset printing method. Thereafter, a rubbing process is performed. This rubbing process may not be performed in the liquid crystal mode, for example, the VA mode. The insulating layer 205 functioning as an alignment film is similar to the insulating layer 203. Subsequently, a sealant 282 is formed in a peripheral region where pixels are formed by a droplet discharge method, a dispenser method, or the like.

After that, the insulating substrate 205 functioning as an alignment film, the counter electrode layer 206, the coloring layer 208 functioning as a color filter, the counter substrate 210 provided with the black matrix 207, and the TFT substrate are bonded to each other with a spacer 281. A liquid crystal layer 204 is provided in the gap. Thereafter, a polarizing plate 231 is provided outside the counter substrate 210. In this embodiment mode, a metal layer having reflectivity with respect to visible light is used as the pixel electrode layer 201, and light is transmitted through the counter substrate 210 and emitted. Therefore, an example in which the polarizing plate is provided only on the counter substrate 210 side is shown. However, in the case where a light-transmitting electrode layer is used as the pixel electrode layer and light is also emitted from the substrate 200 side, an element of the substrate is used. A polarizing plate is also provided on the side opposite to the surface having the. Further, a retardation plate may be provided between the polarizing plate 231 and the counter substrate 210 to function as a circular polarizing plate. The polarizing plate can be provided on the substrate with an adhesive layer. A filler may be mixed in the sealing material. Note that the color filter or the like may be formed from a material exhibiting red (R), green (G), and blue (B) when the liquid crystal display device is set to full color display. It may be formed of a material that eliminates or exhibits at least one color.

Note that a color filter may not be provided when an RGB light emitting diode (LED) or the like is arranged in the backlight and a continuous additive color mixing method (field sequential method) in which color display is performed by time division is adopted. The black matrix is preferably provided so as to overlap with the transistor or the CMOS circuit in order to reduce reflection of external light due to the wiring of the transistor or the CMOS circuit. Note that the black matrix may be formed so as to overlap with the capacitor. This is because reflection by the metal film constituting the capacitor element can be prevented.

As a method for forming the liquid crystal layer, a dispenser type (dropping type) or an injection method in which liquid crystal is injected by using a capillary phenomenon after the substrate having an element and the counter substrate 210 are bonded to each other can be used. The dropping method is preferably applied when handling a large substrate to which the injection method is difficult to apply.

In the present invention, an element layer is formed on a substrate that can withstand process conditions (such as temperature) through an organic compound layer containing a photocatalytic substance, and then a transfer step is performed on a desired substrate (for example, a flexible substrate such as a film). In this transfer step, light is irradiated through the substrate on which the organic compound layer containing the photocatalytic substance is formed (so-called back exposure). The photocatalytic material activated by light decomposes surrounding organic compounds into carbon dioxide and water, leaving the organic compounds in the layer in a crude state. Since the organic compound layer containing the photocatalytic substance has a rough structure, its strength is reduced and it becomes brittle. Therefore, when a force in the opposite direction is applied from both the substrate side and the element layer side, the organic compound layer containing the photocatalytic substance is divided (separated) into the substrate side and the element layer side, and the element layer is transferred to the counter substrate side. . In this embodiment mode, the substrate 200 is bonded to the counter substrate side after being transferred.

In the formation of the liquid crystal layer, the transfer process to the substrate 200 may be performed before or after the liquid crystal layer is formed. For example, when a dispenser method is used as a forming method, a TFT and an alignment film are formed, an element layer including a TFT element is transferred to the substrate 200 before dropping the liquid crystal, and the liquid crystal is dropped on the element layer on the substrate 200 to drop the liquid crystal. A layer may be formed and sealed with a counter substrate. In addition, an element layer is formed on a glass substrate or the like that can withstand a processing step, and a liquid crystal layer is formed by injecting liquid crystal between the element layer and the opposite substrate by an injection method after securing a gap by a spacer and bonding the opposite substrate. May be formed. The element layer and the liquid crystal layer formed above the organic compound layer containing the photocatalytic substance by the photocatalytic substance function may be peeled from the treatment substrate and bonded to the substrate 200 for the display device formed up to the liquid crystal layer.

The spacer may be provided by dispersing particles of several μm, or may be formed by forming a resin film on the entire surface of the substrate and then etching it. After applying such a spacer material with a spinner, it is formed into a predetermined pattern by exposure and development processing. Further, it is cured by heating at 150 to 200 ° C. in a clean oven or the like. The spacers produced in this way can have different shapes depending on the conditions of exposure and development processing. However, when the spacers are columnar and the top is flat, the substrates on the opposite side are combined. In addition, the mechanical strength of the liquid crystal display device can be ensured. However, a conical shape, a pyramidal shape, etc. can be used, and there is no special limitation. In this embodiment mode, a spacer 281 having a curvature is provided over the pixel electrode layer 201 and covered with an insulating layer 203 serving as an alignment film. When the alignment film is formed on the spacer in this way, contact and short-circuit due to poor coating between the pixel electrode layer on the element layer side and the counter substrate side can be prevented. The shape of the spacer 281 is a columnar shape and has a curvature at a ridge portion. That is, it is desirable that the radius of curvature R at the end of the top of the columnar spacer is 2 μm or less, preferably 1 μm or less. By having such a shape, uniform pressure is applied, and it is possible to prevent an excessive pressure from being applied to one point. Note that the lower end of the spacer refers to an end of the columnar spacer on the flexible substrate 200 side. The upper end refers to the top of the columnar spacer. Further, when the width of the central portion in the height direction of the columnar spacer is L1, and the width of the end portion of the columnar spacer on the second flexible substrate side is L2, 0.8 ≦ L2 / L1 ≦ 3. Meet. Further, the angle between the tangential plane at the center of the side surface of the columnar spacer and the first flexible substrate surface, or the angle between the tangential plane at the center of the side surface of the columnar spacer and the second flexible substrate surface, The range of 65 ° to 115 ° is preferable. Further, the height of the spacer is preferably 0.5 μm to 10 μm, or 1.2 μm to 5 μm.

Subsequently, an FPC 286 that is a wiring board for connection is provided on the terminal electrode layer 287 electrically connected to the pixel region with an anisotropic conductive layer 285 interposed therebetween. The FPC 286 plays a role of transmitting an external signal or potential. Through the above steps, a liquid crystal display device having a display function can be manufactured.

Note that a wiring included in the transistor, a gate electrode layer, a pixel electrode layer 201, and a counter electrode layer 206 are formed using indium tin oxide (ITO), indium oxide in which zinc oxide (ZnO) is mixed, indium zinc oxide (IZO), indium oxide. Conductive material mixed with silicon oxide (SiO ₂ ), organic indium, organic tin, indium oxide including tungsten oxide, indium zinc oxide including tungsten oxide, indium oxide including titanium oxide, indium tin oxide including titanium oxide , Tungsten (W), molybdenum (Mo), zirconium (Zr), hafnium (Hf), vanadium (V), niobium (Nb), tantalum (Ta), chromium (Cr), cobalt (Co), nickel (Ni ), Titanium (Ti), platinum (Pt), aluminum ( It can be selected from metals such as Al), copper (Cu), silver (Ag), alloys thereof, or metal nitrides thereof.

When it is necessary to transmit light depending on whether the pixel electrode layer 201 and the counter electrode layer 206 are a transmissive display device or a reflective display device, a light-transmitting electrode or light is appropriately transmitted from the above electrode materials. A thin metal film may be used.

According to the present invention, a semiconductor device and a display device can be manufactured by using a peeling process so that the transfer process can be performed in a good state while maintaining the shape and characteristics before peeling. Therefore, a highly reliable semiconductor device can be manufactured with high yield without complicating the device and the process.

(Embodiment 7)
In this embodiment, an example of the semiconductor device described in the above embodiment will be described with reference to drawings.

The semiconductor device described in this embodiment is characterized in that data can be read and written in a non-contact manner. A data transmission format is an electromagnetic which performs communication by mutual induction with a pair of coils arranged opposite to each other. There are roughly divided into a coupling system, an electromagnetic induction system that communicates using an induction electromagnetic field, and a radio system that communicates using radio waves, but any system may be used. In addition, there are two types of antennas used for data transmission. When one antenna is provided on a substrate on which a plurality of elements and memory elements are provided, the other is provided with a plurality of elements and memory elements. In some cases, a terminal portion is provided over the substrate, and an antenna provided over another substrate is connected to the terminal portion.

  First, a structure example of a semiconductor device in the case where an antenna is provided over a substrate provided with a plurality of elements and memory elements will be described with reference to FIGS.

  FIG. 16 illustrates a semiconductor device including an active matrix type. A transistor portion 330 including transistors 310a and 310b on a substrate 300, a transistor portion 340 including transistors 320a and 320b, insulating layers 301a, 301b, 308, and An element formation layer 335 including 309, 311, 316, and 314 is provided, and a storage element portion 325 and a conductive layer 343 functioning as an antenna are provided above the element formation layer 335.

Note that here, the case where the memory element portion 325 or the conductive layer 343 functioning as an antenna is provided above the element formation layer 335 is shown; however, the structure is not limited thereto, and the memory element portion 325 or the conductive layer 343 functioning as an antenna is provided. Can be provided below the element formation layer 335 or in the same layer.

The memory element portion 325 includes memory elements 315a and 315b. The memory element 315a has a partition wall (insulating layer) 307a, a partition wall (insulating layer) 307b, an insulating layer (memory layer) 312 over the first conductive layer 306a. The memory element 315b includes a partition wall (insulating layer) 307b, a partition wall (insulating layer) 307c, an insulating layer (memory layer) 312 and a second conductive layer 313b over the first conductive layer 306b. Two conductive layers 313 are stacked. In addition, an insulating layer 314 that covers the second conductive layer 313 and functions as a protective film is formed. The first conductive layer 306a and the first conductive layer 306b in which the plurality of memory elements 315a and 315b are formed are connected to the source electrode layer or the drain electrode layer of each of the transistors 310a and 310b. That is, each memory element is connected to one transistor. An insulating layer (memory layer) 312 is formed over the entire surface so as to cover the first conductive layers 306a and 306b and the partition walls (insulating layers) 307a, 307b, and 307c, but is selectively formed in each memory cell. It may be.

  In the memory element 315a, as described in the above embodiment mode, the insulating layer (memory layer) 312 and the second conductive layer 313 are provided between the first conductive layer 306a and the insulating layer (memory layer) 312. An element having a rectifying property may be provided between the two. The above-described elements having a rectifying property can also be used. The same applies to the memory element 315b.

  Here, the conductive layer 343 functioning as an antenna is provided over the conductive layer 342 formed using the same layer as the second conductive layer 313, and is formed using the same layer as the first conductive layers 306a and 306b. The transistor 320a is electrically connected through the conductive layer 341. Note that a conductive layer functioning as an antenna may be formed using the same layer as the second conductive layer 313.

  As a material of the conductive layer 343 functioning as an antenna, gold (Au), platinum (Pt), nickel (Ni), tungsten (W), molybdenum (Mo), cobalt (Co), copper (Cu), aluminum (Al ), Manganese (Mn), titanium (Ti), or the like, or an alloy containing a plurality of such elements can be used. As a method for forming the conductive layer 343 functioning as an antenna, various printing methods such as vapor deposition, sputtering, CVD, screen printing, and gravure printing, a droplet discharge method, or the like can be used.

  The transistors 310a, 310b, 320a, and 320b included in the element formation layer 335 can be provided using a p-channel TFT, an n-channel TFT, or a CMOS in which these are combined. Further, any structure of the semiconductor layer included in the transistors 310a, 310b, 320a, and 320b may be used, and for example, an impurity region (including a source region, a drain region, and an LDD region) may be formed. The p channel type or the n channel type may be used. Further, an insulating layer (side wall) may be formed so as to be in contact with the side surface of the gate electrode, or a silicide layer may be formed on one or both of the source region, the drain region, and the gate electrode. As a material for the silicide layer, nickel, tungsten, molybdenum, cobalt, platinum, or the like can be used.

  Alternatively, the transistors 310a, 310b, 320a, and 320b included in the element formation layer 335 may be organic transistors in which a semiconductor layer included in the transistor is formed using an organic compound. The element formation layer 335 including an organic transistor can be formed using a printing method, a droplet discharge method, or the like. By using a printing method, a droplet discharge method, or the like, a semiconductor device can be manufactured at lower cost.

  The element formation layer 335, the memory elements 315a and 315b, and the conductive layer 343 functioning as an antenna can be formed by vapor deposition, sputtering, CVD, printing, droplet discharge, or the like as described above. . Note that a different method may be used depending on each place. For example, a transistor that requires high-speed operation is provided by forming a semiconductor layer made of Si or the like on a substrate and then crystallizing it by heat treatment, and then forming a transistor that functions as a switching element above the element formation layer by a printing method or An organic transistor can be provided by a droplet discharge method.

Note that a sensor connected to the transistor may be provided. Examples of the sensor include an element that detects temperature, humidity, illuminance, gas (gas), gravity, pressure, sound (vibration), acceleration, and other characteristics by physical or chemical means. The sensor is typically formed of a semiconductor element such as a resistance element, a capacitive coupling element, an inductive coupling element, a photovoltaic element, a photoelectric conversion element, a thermoelectric element, a transistor, a thermistor, or a diode.

Next, a structure example of a semiconductor device in the case where a terminal portion is provided over a substrate provided with a plurality of elements and memory elements and an antenna provided over another terminal is connected to the terminal portion will be described with reference to FIG. I will explain.

FIG. 17 illustrates a passive matrix semiconductor device. A transistor portion 380 including a transistor 360a and a transistor 360b over a substrate 350, a transistor portion 390 including a transistor 370a and a transistor 370b, insulating layers 351a, 351b, 358, and 359, An element formation layer 385 including 361, 366, and 384 is provided, a memory element portion 375 is provided above the element formation layer 385, and a conductive layer 393 that functions as an antenna provided over the substrate 396 is connected to the element formation layer 385. It is provided to do. Note that here, the case where the memory element portion 375 or the conductive layer 393 functioning as an antenna is provided above the element formation layer 385 is shown; however, the present invention is not limited to this structure, and the memory element portion 375 is provided below the element formation layer 385. A conductive layer 393 functioning as an antenna can be provided below the element formation layer 385 in the same layer.

The memory element portion 375 includes memory elements 365a and 365b. The memory element 365a includes a partition wall (insulating layer) 357a, a partition wall (insulating layer) 357b, an insulating layer (memory layer) 362a, and the first conductive layer 356. The second conductive layer 363a is stacked, and the memory element 365b includes a partition wall (insulating layer) 357b, a partition wall (insulating layer) 357c, an insulating layer (memory layer) 362b, and a first conductive layer 356 over the first conductive layer 356. Two conductive layers 363b are stacked. In addition, an insulating layer 364 that functions as a protective film is formed so as to cover the second conductive layers 363a and 363b. In addition, the first conductive layer 356 in which the plurality of memory elements 365a and 365b are formed is connected to one source electrode layer or drain electrode layer of the transistor 360b. That is, the memory element is connected to the same single transistor. Further, partition walls (insulating layers) 357a, 357b, and 357c for separating the insulating layer (memory layer) 362a, the insulating layer (memory layer) 362b, the second conductive layer 363a, and the second conductive layer 363b for each memory cell. However, in the case where there is no concern about the influence of the electric field in the lateral direction in adjacent memory cells, it may be formed on the entire surface. Note that the memory elements 365a and 365b can be formed using the material or the manufacturing method described in the above embodiment modes.

Therefore, defects such as film peeling at the layer interface do not occur due to the force applied in the process of being transferred to the second substrate after being formed on the first substrate. Even when a glass substrate that can withstand manufacturing conditions such as temperature is used in the element manufacturing process, a flexible substrate such as a film can be used for the substrate 350 by being transferred to the second substrate. Therefore, the memory element can be peeled and transferred with a favorable shape, so that a semiconductor device can be manufactured.

  A substrate including the element formation layer 385 and the memory element portion 375 and a substrate 396 provided with a conductive layer 393 functioning as an antenna are attached to each other with a resin 395 having adhesiveness. The transistor 370a and the conductive layer 393 formed in the element formation layer 385 are conductive fine particles 394 contained in the resin 395, the conductive layer 391 formed in the same layer as the first conductive layer 356, and the second conductive layer. The layers 363a and 363b are electrically connected through a conductive layer 392 formed in the same layer. In addition, a conductive layer such as a silver paste, a copper paste, or a carbon paste or a method of performing solder bonding is used to provide a substrate including the element formation layer 385 and the memory element portion 375, and a conductive layer 393 that functions as an antenna. The substrate 396 may be attached.

Further, the memory element portion may be provided on a substrate provided with a conductive layer functioning as an antenna. A sensor connected to the transistor may be provided.

In the present invention, by dispersing the photocatalytic substance in the organic compound layer, the organic compound is decomposed (destroyed) using the photocatalytic function of the photocatalytic substance to roughen the organic compound in the layer, and the element layer is peeled from the substrate. Therefore, since it is not necessary to apply a large force to the element layer for peeling, the element is not destroyed in the peeling process, and can be freely transferred to various substrates with a good shape. The remaining layers on the element layer side after peeling of the organic compound layer containing the photocatalytic substance are organic compound layers 326 and 376 containing the photocatalytic substance.

Therefore, since it can be freely transferred to various substrates, the range of substrate material selectivity is widened. In addition, an inexpensive material can be selected as the substrate, so that not only a wide function can be provided depending on the application, but also a semiconductor device can be manufactured at low cost.

Note that this embodiment can be freely combined with the above embodiment. In addition, the semiconductor device manufactured in this embodiment can be provided over a flexible substrate by being separated from the substrate by a separation process and bonded to a flexible substrate, so that the semiconductor device has flexibility. Can do. Flexible substrate means film made of polypropylene, polyester, vinyl, polyvinyl fluoride, vinyl chloride, paper made of fibrous material, substrate film (polyester, polyamide, inorganic vapor deposition film, paper, etc.) and adhesiveness It corresponds to a laminated film with a synthetic resin film (acrylic synthetic resin, epoxy synthetic resin, etc.). The film is subjected to heat treatment and pressure treatment, and when the heat treatment and pressure treatment are performed, the film is provided on the adhesive layer provided on the outermost surface of the film or on the outermost layer. The layer (not the adhesive layer) is melted by heat treatment and bonded by pressure. Further, an adhesive layer may be provided on the substrate, or an adhesive layer may not be provided. The adhesive layer corresponds to a layer containing an adhesive such as a thermosetting resin, an ultraviolet curable resin, an epoxy resin adhesive, or a resin additive.

According to the present invention, a semiconductor device and a display device can be manufactured by using a peeling process so that the transfer process can be performed in a good state while maintaining the shape and characteristics before peeling. Therefore, a highly reliable semiconductor device can be manufactured with high yield without complicating the device and the process.

(Embodiment 8)
A thin film transistor and a light-emitting element can be formed by applying the present invention and transferred to various substrates to form a display device. The light-emitting element is used and an n-channel transistor is used as a transistor for driving the light-emitting element. When light is used, light emitted from the light emitting element performs any one of bottom emission, top emission, and dual emission. Here, a stacked structure of light-emitting elements corresponding to each case will be described with reference to FIGS.

In this embodiment mode, channel protective thin film transistors 461, 471, and 481 to which the present invention is applied are used. The thin film transistor 481 is provided over the light-transmitting substrate 480 by the transfer process of the present invention, and includes a gate electrode layer 493, a gate insulating layer 497, a semiconductor layer 494, an n-type semiconductor layer 495a, and an n-type semiconductor layer. 495b, a source or drain electrode layer 487a, a source or drain electrode layer 487b, and a channel protective layer 496. In this embodiment, a silicon film having an amorphous structure is used as the semiconductor layer, and an n-type semiconductor layer is used as the one-conductivity-type semiconductor layer. Instead of forming an n-type semiconductor layer, conductivity may be imparted to the semiconductor layer by performing plasma treatment with a PH ₃ gas. The semiconductor layer is not limited to this embodiment mode, and a crystalline semiconductor layer can also be used as long as the organic compound layer containing the photocatalytic substance can withstand a process temperature. When a crystalline semiconductor layer such as polysilicon is used, an impurity region having one conductivity type may be formed by introducing (adding) an impurity into the crystalline semiconductor layer without forming the one conductivity type semiconductor layer. . In addition, an organic semiconductor such as pentacene can be used. When the organic semiconductor is selectively formed by a droplet discharge method or the like, an etching process to a desired shape can be simplified.

In the present invention, by dispersing the photocatalytic substance in the organic compound layer, the organic compound is decomposed (destroyed) using the photocatalytic function of the photocatalytic substance to roughen the organic compound in the layer, and the element layer is peeled from the substrate. Therefore, since it is not necessary to apply a large force to the element layer for peeling, the element is not destroyed in the peeling process, and can be freely transferred to various substrates with a good shape. The remaining layers on the element layer side after peeling of the organic compound layer containing the photocatalytic substance are organic compound layers 499, 469, and 479 containing the photocatalytic substance. The substrates 480, 460, and 470 bonded to the element layer may be made of a material that does not transmit light having a wavelength that activates the photocatalytic substance remaining in the element layer.

Therefore, since it can be freely transferred to various substrates, the range of substrate material selectivity is widened. In addition, an inexpensive material can be selected as the substrate, so that not only a wide function can be provided depending on the application, but also a display device can be manufactured at low cost.

For the channel protective layer 496, polyimide, polyvinyl alcohol, or the like may be dropped by a droplet discharge method. As a result, the exposure process can be omitted. As the channel protective layer, inorganic materials (silicon oxide, silicon nitride, silicon oxynitride, silicon nitride oxide, etc.), photosensitive or non-photosensitive organic (resin) materials (polyimide, acrylic, polyamide, polyimide amide, benzocyclobutene) Etc.), a film made of one kind or a plurality of kinds of resists, low dielectric constant materials, etc., or a laminate of these films. A siloxane resin may also be used. Note that a siloxane resin corresponds to a resin including a Si—O—Si bond. Siloxane has a skeleton structure formed of a bond of silicon (Si) and oxygen (O). As a substituent, an organic group containing at least hydrogen (for example, an alkyl group or an aryl group) is used. A fluoro group may be used as a substituent. Alternatively, an organic group containing at least hydrogen and a fluoro group may be used as a substituent. As a manufacturing method, a vapor deposition method such as a plasma CVD method or a thermal CVD method, or a sputtering method can be used. Alternatively, a droplet discharge method or a printing method (a method for forming a pattern such as screen printing or offset printing) can be used. A film obtained by a coating method, an SOG film, or the like can also be used.

First, the case where light is emitted to the light-transmitting substrate 480 side, that is, the case where bottom emission is performed will be described with reference to FIG. In this case, a first electrode layer 484 is formed in contact with the source or drain electrode layer 487b so as to be electrically connected to the thin film transistor 481, and the electroluminescent layer 485 is formed over the first electrode layer 484. A second electrode layer 486 is sequentially stacked. Next, the case where light is emitted to the side opposite to the light-transmitting substrate 460, that is, the case where top emission is performed will be described with reference to FIG. The thin film transistor 461 can be formed in a manner similar to that of the thin film transistor described above.

A source or drain electrode layer 462 electrically connected to the thin film transistor 461, a first electrode layer 463, an electroluminescent layer 464, and a second electrode layer 465 are stacked in this order. With the above structure, even when light is transmitted through the first electrode layer 463, the light is reflected by the source or drain electrode layer 462 and emitted to the side opposite to the light-transmitting substrate 460. Note that in this structure, it is not necessary to use a light-transmitting material for the first electrode layer 463. Finally, a case where light is emitted to the light-transmitting substrate 470 side and the opposite side, that is, a case where dual emission is performed will be described with reference to FIG. The thin film transistor 471 is a channel protective thin film transistor similar to the thin film transistor 481. The thin film transistor 481 can be formed in a similar manner. A first electrode layer 472 is formed in contact with the source or drain electrode layer 475 so as to be electrically connected to the thin film transistor 471, and the electroluminescent layer 473 and the second electrode are formed over the first electrode layer 472. Layers 474 are sequentially stacked. At this time, when both the first electrode layer 472 and the second electrode layer 474 are formed using a light-transmitting material or a thickness capable of transmitting light, dual emission is realized.

  A structure of a light-emitting element that can be applied to this embodiment mode will be described in detail with reference to FIGS.

  FIG. 18 illustrates an element structure of a light-emitting element, in which an electroluminescent layer 860 formed by mixing an organic compound and an inorganic compound is sandwiched between a first electrode layer 870 and a second electrode layer 850. It is. The electroluminescent layer 860 includes a first layer 804, a second layer 803, and a third layer 802 as shown in the drawing, and particularly has a great feature in the first layer 804 and the third layer 802. .

  First, the first layer 804 is a layer that has a function of transporting holes to the second layer 803, and includes a first organic compound and a first organic electron-accepting property with respect to the first organic compound. It is a structure containing an inorganic compound. What is important is not simply that the first organic compound and the first inorganic compound are mixed, but the first inorganic compound exhibits an electron accepting property with respect to the first organic compound. By adopting such a configuration, many hole carriers are generated in the first organic compound which has essentially no intrinsic carrier, and exhibits extremely excellent hole injection and hole transport properties.

  Therefore, the first layer 804 has not only effects (such as improved heat resistance) that are considered to be obtained by mixing an inorganic compound, but also excellent conductivity (in particular, in the first layer 804, hole injection). And transportability) can also be obtained. This is an effect that cannot be obtained with a conventional hole transport layer in which an organic compound and an inorganic compound that do not have an electronic interaction with each other are simply mixed. Due to this effect, the drive voltage can be made lower than in the prior art. Further, since the first layer 804 can be thickened without causing an increase in driving voltage, a short circuit of an element due to dust or the like can be suppressed.

By the way, as described above, since hole carriers are generated in the first organic compound, the first organic compound is preferably a hole-transporting organic compound. Examples of the hole transporting organic compound include phthalocyanine (abbreviation: H ₂ Pc), copper phthalocyanine (abbreviation: CuPc), vanadyl phthalocyanine (abbreviation: VOPc), 4,4 ′, 4 ″ -tris (N, N -Diphenylamino) triphenylamine (abbreviation: TDATA), 4,4 ′, 4 ″ -tris [N- (3-methylphenyl) -N-phenylamino] triphenylamine (abbreviation: MTDATA), 1,3 , 5-tris [N, N-di (m-tolyl) amino] benzene (abbreviation: m-MTDAB), N, N′-diphenyl-N, N′-bis (3-methylphenyl) -1,1 ′ -Biphenyl-4,4'-diamine (abbreviation: TPD), 4,4'-bis [N- (1-naphthyl) -N-phenylamino] biphenyl (abbreviation: NPB), 4,4'-bis {N -[4-di m-tolyl) amino] phenyl-N-phenylamino} biphenyl (abbreviation: DNTPD), 4,4 ′, 4 ″ -tris (N-carbazolyl) triphenylamine (abbreviation: TCTA), and the like. It is not limited to. Among the above-mentioned compounds, aromatic amine compounds represented by TDATA, MTDATA, m-MTDAB, TPD, NPB, DNTPD, TCTA, etc. are likely to generate hole carriers and are suitable as the first organic compound. A group.

  On the other hand, the first inorganic compound may be anything as long as it can easily receive electrons from the first organic compound, and various metal oxides or metal nitrides can be used. Any transition metal oxide belonging to Group 12 is preferable because it easily exhibits electron acceptability. Specific examples include titanium oxide, zirconium oxide, vanadium oxide, molybdenum oxide, tungsten oxide, rhenium oxide, ruthenium oxide, and zinc oxide. Among the metal oxides described above, any of the transition metal oxides in Groups 4 to 8 of the periodic table has a high electron accepting property and is a preferred group. Vanadium oxide, molybdenum oxide, tungsten oxide, and rhenium oxide are particularly preferable because they can be vacuum-deposited and are easy to handle.

  Note that the first layer 804 may be formed by stacking a plurality of layers to which the above-described combination of an organic compound and an inorganic compound is applied. Moreover, other organic compounds or other inorganic compounds may be further contained.

  Next, the third layer 802 will be described. The third layer 802 is a layer having a function of transporting electrons to the second layer 803, and includes at least a third organic compound and a third inorganic compound that exhibits an electron donating property with respect to the third organic compound. It is the structure containing these. What is important is not that the third organic compound and the third inorganic compound are merely mixed, but that the third inorganic compound exhibits an electron donating property with respect to the third organic compound. By adopting such a structure, many electron carriers are generated in the third organic compound which has essentially no intrinsic carrier, and exhibits extremely excellent electron injection properties and electron transport properties.

  Therefore, the third layer 802 has not only an effect (such as improvement in heat resistance) considered to be obtained by mixing an inorganic compound but also excellent conductivity (especially in the third layer 802, electron injection). And transportability) can also be obtained. This is an effect that cannot be obtained with a conventional electron transport layer in which an organic compound and an inorganic compound that do not have an electronic interaction with each other are simply mixed. Due to this effect, the drive voltage can be made lower than in the prior art. In addition, since the third layer 802 can be thickened without causing an increase in driving voltage, a short circuit of an element due to dust or the like can be suppressed.

By the way, as described above, since an electron carrier is generated in the third organic compound, the third organic compound is preferably an electron-transporting organic compound. Examples of the electron-transporting organic compound include tris (8-quinolinolato) aluminum (abbreviation: Alq ₃ ), tris (4-methyl-8-quinolinolato) aluminum (abbreviation: Almq ₃ ), bis (10-hydroxybenzo [ h] -quinolinato) beryllium (abbreviation: BeBq ₂ ), bis (2-methyl-8-quinolinolato) (4-phenylphenolato) aluminum (abbreviation: BAlq), bis [2- (2′-hydroxyphenyl) benzoxa Zolato] zinc (abbreviation: Zn (BOX) ₂ ), bis [2- (2′-hydroxyphenyl) benzothiazolate] zinc (abbreviation: Zn (BTZ) ₂ ), bathophenanthroline (abbreviation: BPhen), bathocuproin (abbreviation: BCP), 2- (4-biphenylyl) -5- (4-tert-butylphenyl)- , 3,4-oxadiazole (abbreviation: PBD), 1,3-bis [5- (4-tert-butylphenyl) -1,3,4-oxadiazol-2-yl] benzene (abbreviation: OXD) -7), 2,2 ′, 2 ″-(1,3,5-benzenetriyl) -tris (1-phenyl-1H-benzimidazole) (abbreviation: TPBI), 3- (4-biphenylyl)- 4-phenyl-5- (4-tert-butylphenyl) -1,2,4-triazole (abbreviation: TAZ), 3- (4-biphenylyl) -4- (4-ethylphenyl) -5- (4- tert-butylphenyl) -1,2,4-triazole (abbreviation: p-EtTAZ) and the like, but are not limited thereto. Among the compounds described above, a chelate metal complex having a chelate ligand containing an aromatic ring typified by Alq ₃ , Almq ₃ , BeBq ₂ , BAlq, Zn (BOX) ₂ , Zn (BTZ) ₂ , Organic compounds having a phenanthroline skeleton typified by BPhen, BCP, etc., and organic compounds having an oxadiazole skeleton typified by PBD, OXD-7, etc., are likely to generate electron carriers and are suitable as a third organic compound. Compound group.

  On the other hand, the third inorganic compound may be anything as long as it easily gives electrons to the third organic compound, and various metal oxides or metal nitrides can be used. Earth metal oxides, rare earth metal oxides, alkali metal nitrides, alkaline earth metal nitrides, and rare earth metal nitrides are preferable because they easily exhibit electron donating properties. Specific examples include lithium oxide, strontium oxide, barium oxide, erbium oxide, lithium nitride, magnesium nitride, calcium nitride, yttrium nitride, and lanthanum nitride. In particular, lithium oxide, barium oxide, lithium nitride, magnesium nitride, and calcium nitride are preferable because they can be vacuum-deposited and are easy to handle.

  Note that the third layer 802 may be formed by stacking a plurality of layers to which the above-described combination of an organic compound and an inorganic compound is applied. Moreover, other organic compounds or other inorganic compounds may be further contained.

  Next, the second layer 803 will be described. The second layer 803 is a layer having a light emitting function and includes a light emitting second organic compound. Moreover, the structure containing a 2nd inorganic compound may be sufficient. The second layer 803 can be formed using various light-emitting organic compounds and inorganic compounds. However, since the second layer 803 is less likely to flow current than the first layer 804 and the third layer 802, the thickness is preferably about 10 nm to 100 nm.

The second organic compound is not particularly limited as long as it is a luminescent organic compound. For example, 9,10-di (2-naphthyl) anthracene (abbreviation: DNA), 9,10-di (2 -Naphthyl) -2-tert-butylanthracene (abbreviation: t-BuDNA), 4,4'-bis (2,2-diphenylvinyl) biphenyl (abbreviation: DPVBi), coumarin 30, coumarin 6, coumarin 545, coumarin 545T , Perylene, rubrene, periflanthene, 2,5,8,11-tetra (tert-butyl) perylene (abbreviation: TBP), 9,10-diphenylanthracene (abbreviation: DPA), 5,12-diphenyltetracene, 4- ( Dicyanomethylene) -2-methyl- [p- (dimethylamino) styryl] -4H-pyran (abbreviation: DCM1), 4- (di Cyanomethylene) -2-methyl-6- [2- (julolidin-9-yl) ethenyl] -4H-pyran (abbreviation: DCM2), 4- (dicyanomethylene) -2,6-bis [p- (dimethylamino) ) Styryl] -4H-pyran (abbreviation: BisDCM) and the like. In addition, bis [2- (4 ′, 6′-difluorophenyl) pyridinato-N, C ^{2 ′} ] iridium (picolinate) (abbreviation: FIrpic), bis {2- [3 ′, 5′-bis (trifluoromethyl) ) Phenyl] pyridinato-N, C ^{2 ′} } iridium (picolinate) (abbreviation: Ir (CF ₃ ppy) ₂ (pic)), tris (2-phenylpyridinato-N, C ^{2 ′} ) iridium (abbreviation: Ir (Ppy) ₃ ), bis (2-phenylpyridinato-N, C ^{2 ′} ) iridium (acetylacetonate) (abbreviation: Ir (ppy) ₂ (acac)), bis [2- (2′-thienyl) pyridinato -N, C ^{3 ']} iridium (acetylacetonate) _{(abbreviation: Ir (thp) 2 (acac} )), bis (2-phenylquinolinato--N, C ^2') iridium (Asechirua Tonato) _{(abbreviation: Ir (pq) 2 (acac} )), bis [2- (2'-benzothienyl) pyridinato -N, C ^{3 ']} iridium (acetylacetonate) (abbreviation: Ir _(btp) 2 (acac A compound capable of emitting phosphorescence such as)) can also be used.

For the second layer 803, a triplet excitation material containing a metal complex or the like may be used in addition to the singlet excitation light-emitting material. For example, among red light emitting pixels, green light emitting pixels, and blue light emitting pixels, a red light emitting pixel having a relatively short luminance half time is formed of a triplet excitation light emitting material, and the other A singlet excited luminescent material is used. The triplet excited luminescent material has a feature that the light emission efficiency is good, so that less power is required to obtain the same luminance. That is, when applied to a red pixel, the amount of current flowing through the light emitting element can be reduced, so that reliability can be improved. As a reduction in power consumption, a red light-emitting pixel and a green light-emitting pixel may be formed using a triplet excitation light-emitting material, and a blue light-emitting pixel may be formed using a singlet excitation light-emitting material. By forming a green light-emitting element having high human visibility with a triplet excited light-emitting material, power consumption can be further reduced.

Further, in the second layer 803, not only the second organic compound that emits light but also other organic compounds may be added. Examples of the organic compound that can be added include TDATA, MTDATA, m-MTDAB, TPD, NPB, DNTPD, TCTA, Alq ₃ , Almq ₃ , BeBq ₂ , BAlq, Zn (BOX) ₂ , and Zn (BTZ) described above. ₂ , BPhen, BCP, PBD, OXD-7, TPBI, TAZ, p-EtTAZ, DNA, t-BuDNA, DPVBi, etc., 4,4′-bis (N-carbazolyl) biphenyl (abbreviation: CBP), 1 , 3,5-tris [4- (N-carbazolyl) phenyl] benzene (abbreviation: TCPB) can be used, but is not limited thereto. In addition, the organic compound added in addition to the second organic compound in this way has an excitation energy larger than the excitation energy of the second organic compound in order to efficiently emit the second organic compound, and the second organic compound. It is preferable to add more than the organic compound (by this, concentration quenching of the second organic compound can be prevented). Or as another function, you may show light emission with a 2nd organic compound (Thereby, white light emission etc. are also attained).

    The second layer 803 may have a structure in which a light emitting layer having a different emission wavelength band is formed for each pixel to perform color display. Typically, a light emitting layer corresponding to each color of R (red), G (green), and B (blue) is formed. In this case as well, it is possible to improve color purity and prevent mirror reflection (reflection) of the pixel portion by providing a filter that transmits light in the emission wavelength band on the light emission side of the pixel. Can do. By providing the filter, it is possible to omit a circularly polarizing plate that has been conventionally required, and it is possible to eliminate the loss of light emitted from the light emitting layer. Furthermore, a change in color tone that occurs when the pixel portion (display screen) is viewed obliquely can be reduced.

    The material that can be used for the second layer 803 may be a low molecular weight organic light emitting material or a high molecular weight organic light emitting material. The polymer organic light emitting material has higher physical strength and higher device durability than the low molecular weight material. In addition, since the film can be formed by coating, the device can be manufactured relatively easily.

    Since the light emission color is determined by the material for forming the light emitting layer, a light emitting element exhibiting desired light emission can be formed by selecting these materials. Examples of the polymer electroluminescent material that can be used for forming the light emitting layer include polyparaphenylene vinylene, polyparaphenylene, polythiophene, and polyfluorene.

    Examples of the polyparaphenylene vinylene include poly (paraphenylene vinylene) [PPV] derivatives, poly (2,5-dialkoxy-1,4-phenylene vinylene) [RO-PPV], poly (2- (2′- Ethyl-hexoxy) -5-methoxy-1,4-phenylenevinylene) [MEH-PPV], poly (2- (dialkoxyphenyl) -1,4-phenylenevinylene) [ROPh-PPV] and the like. Examples of polyparaphenylene include derivatives of polyparaphenylene [PPP], poly (2,5-dialkoxy-1,4-phenylene) [RO-PPP], poly (2,5-dihexoxy-1,4-phenylene). ) And the like. The polythiophene series includes polythiophene [PT] derivatives, poly (3-alkylthiophene) [PAT], poly (3-hexylthiophene) [PHT], poly (3-cyclohexylthiophene) [PCHT], poly (3-cyclohexyl). -4-methylthiophene) [PCHMT], poly (3,4-dicyclohexylthiophene) [PDCHT], poly [3- (4-octylphenyl) -thiophene] [POPT], poly [3- (4-octylphenyl) -2,2 bithiophene] [PTOPT] and the like. Examples of the polyfluorene series include polyfluorene [PF] derivatives, poly (9,9-dialkylfluorene) [PDAF], poly (9,9-dioctylfluorene) [PDOF], and the like.

  The second inorganic compound may be any inorganic compound as long as it is difficult to quench the light emission of the second organic compound, and various metal oxides and metal nitrides can be used. In particular, a metal oxide of Group 13 or Group 14 of the periodic table is preferable because it is difficult to quench the light emission of the second organic compound, and specifically, aluminum oxide, gallium oxide, silicon oxide, and germanium oxide are preferable. . However, it is not limited to these.

  Note that the second layer 803 may be formed by stacking a plurality of layers to which the above-described combination of an organic compound and an inorganic compound is applied. Moreover, other organic compounds or other inorganic compounds may be further contained. The layer structure of the light-emitting layer can be changed, and instead of having a specific electron injection region or light-emitting region, an electrode layer for this purpose is provided, or a light-emitting material is dispersed. Modifications can be made without departing from the spirit of the present invention.

    A light-emitting element formed using the above materials emits light by being forward-biased. A pixel of a display device formed using a light-emitting element can be driven by a simple matrix method or an active matrix method. In any case, each pixel emits light by applying a forward bias at a specific timing, but is in a non-light emitting state for a certain period. By applying a reverse bias during this non-light emitting time, the reliability of the light emitting element can be improved. The light emitting element has a degradation mode in which the light emission intensity decreases under a constant driving condition and a degradation mode in which the non-light emitting area is enlarged in the pixel and the luminance is apparently decreased. However, alternating current that applies a bias in the forward and reverse directions. By performing a typical drive, the progress of deterioration can be delayed, and the reliability of the light-emitting display device can be improved. Further, either digital driving or analog driving can be applied.

    Therefore, a color filter (colored layer) may be formed on the sealing substrate. The color filter (colored layer) can be formed by an evaporation method or a droplet discharge method. When the color filter (colored layer) is used, high-definition display can be performed. This is because the color filter (colored layer) can be corrected so that a broad peak becomes a sharp peak in the emission spectrum of each RGB.

    Full color display can be performed by forming a material exhibiting monochromatic light emission and combining a color filter and a color conversion layer. The color filter (colored layer) and the color conversion layer may be formed, for example, on the second substrate (sealing substrate) and attached to the substrate.

    Of course, monochromatic light emission may be displayed. For example, an area color type display device may be formed using monochromatic light emission. As the area color type, a passive matrix type display unit is suitable, and characters and symbols can be mainly displayed.

  The materials of the first electrode layer 870 and the second electrode layer 850 need to be selected in consideration of the work function, and both the first electrode layer 870 and the second electrode layer 850 are anodes depending on the pixel structure. Or a cathode. In the case where the polarity of the driving thin film transistor is a p-channel type, the first electrode layer 870 may be an anode and the second electrode layer 850 may be a cathode as illustrated in FIG. In the case where the polarity of the driving thin film transistor is an n-channel type, it is preferable that the first electrode layer 870 be a cathode and the second electrode layer 850 be an anode as shown in FIG. Materials that can be used for the first electrode layer 870 and the second electrode layer 850 are described. In the case where the first electrode layer 870 and the second electrode layer 850 function as anodes, a material having a high work function (specifically, a material of 4.5 eV or more) is preferable, and the first electrode layer and the second electrode In the case where the layer 850 functions as a cathode, a material having a low work function (specifically, a material having a value of 3.5 eV or less) is preferable. However, since the hole injection and hole transport characteristics of the first layer 804 and the electron injection and electron transport characteristics of the third layer 802 are excellent, both the first electrode layer 870 and the second electrode layer 850 are Various materials can be used with almost no work function limitation.

18A and 18B has a structure in which light is extracted from the first electrode layer 870, the second electrode layer 850 does not necessarily have a light-transmitting property. As the second electrode layer 850, an element selected from Ti, Ni, W, Cr, Pt, Zn, Sn, In, Ta, Al, Cu, Au, Ag, Mg, Ca, Li, or Mo, or TiN , TiSi _X N _Y , WSi _X , WN _X , WSi _X N _Y , NbN, or other alloy material or compound material containing the above elements as a main component, or a laminated film thereof having a total film thickness of 100 nm to 800 nm It may be used in the range.

    The second electrode layer 850 can be formed by an evaporation method, a sputtering method, a CVD method, a printing method, a dispenser method, a droplet discharge method, or the like.

    In addition, when a light-transmitting conductive material such as a material used for the first electrode layer 870 is used for the second electrode layer 850, light is extracted from the second electrode layer 850, so that the light-emitting element can emit light. The emitted light may have a dual emission structure in which both the first electrode layer 870 and the second electrode layer 850 are emitted.

  Note that the light-emitting element of the present invention has various variations by changing types of the first electrode layer 870 and the second electrode layer 850.

  FIG. 18B illustrates a case where the electroluminescent layer 860 includes the third layer 802, the second layer, and the first layer 804 in this order from the first electrode layer 870 side.

  As described above, in the light-emitting element of the present invention, the electric field in which the layer sandwiched between the first electrode layer 870 and the second electrode layer 850 includes a layer in which an organic compound and an inorganic compound are combined is included. The light emitting layer 860 is formed. Then, by mixing the organic compound and the inorganic compound, there are provided layers (that is, the first layer 804 and the third layer 802) that can obtain functions of high carrier injection and carrier transport that cannot be obtained independently. This is an organic and inorganic composite light emitting element. In addition, when the first layer 804 and the third layer 802 are provided on the first electrode layer 870 side, the first layer 804 and the third layer 802 need to be a layer in which an organic compound and an inorganic compound are combined. When provided on the 850 side, only an organic compound or an inorganic compound may be used.

  Note that although the electroluminescent layer 860 is a layer in which an organic compound and an inorganic compound are mixed, various known methods can be used as a formation method thereof. For example, there is a technique in which both an organic compound and an inorganic compound are evaporated by resistance heating and co-evaporated. In addition, while the organic compound is evaporated by resistance heating, the inorganic compound may be evaporated by electron beam (EB) and co-evaporated. Further, there is a method of evaporating the organic compound by resistance heating and simultaneously sputtering the inorganic compound and depositing both at the same time. In addition, the film may be formed by a wet method.

  Similarly, for the first electrode layer 870 and the second electrode layer 850, a vapor deposition method using resistance heating, an EB vapor deposition method, a sputtering method, a wet method, or the like can be used.

    FIG. 18C illustrates a structure in which a reflective electrode layer is used for the first electrode layer 870 and a light-transmitting electrode layer is used for the second electrode layer 850 in FIG. Light emitted from the element is reflected by the first electrode layer 870 and transmitted through the second electrode layer 850 to be emitted. Similarly, in FIG. 18D, a reflective electrode layer is used for the first electrode layer 870 and a light-transmitting electrode layer is used for the second electrode layer 850 in FIG. 18B. The light emitted from the light emitting element is reflected by the first electrode layer 870 and is transmitted through the second electrode layer 850 and emitted.

This embodiment mode can be freely combined with the above embodiment modes.

(Embodiment 9)
In this embodiment mode, other structures that can be applied to the light-emitting element of the present invention will be described with reference to FIGS.

A light-emitting element utilizing electroluminescence is distinguished depending on whether the light-emitting material is an organic compound or an inorganic compound. Generally, the former is called an organic EL element and the latter is called an inorganic EL element.

Inorganic EL elements are classified into a dispersion-type inorganic EL element and a thin-film inorganic EL element depending on the element structure. The former has an electroluminescent layer in which particles of a luminescent material are dispersed in a binder, and the latter has an electroluminescent layer made of a thin film of luminescent material, but is accelerated by a high electric field. This is common in that it requires more electrons. Note that the obtained light emission mechanism includes donor-acceptor recombination light emission using a donor level and an acceptor level, and localized light emission using inner-shell electron transition of a metal ion. In general, the dispersion-type inorganic EL often has donor-acceptor recombination light emission, and the thin-film inorganic EL element often has localized light emission.

A light-emitting material that can be used in the present invention includes a base material and an impurity element serving as a light emission center. By changing the impurity element to be contained, light emission of various colors can be obtained. As a method for manufacturing the light-emitting material, various methods such as a solid phase method and a liquid phase method (coprecipitation method) can be used. Also, spray pyrolysis method, metathesis method, precursor thermal decomposition method, reverse micelle method, method combining these methods with high temperature firing, liquid phase method such as freeze-drying method, etc. can be used.

The solid phase method is a method in which a base material and an impurity element or a compound containing the impurity element are weighed, mixed in a mortar, heated and fired in an electric furnace, reacted, and the base material contains the impurity element. The firing temperature is preferably 700 to 1500 ° C. This is because the solid phase reaction does not proceed when the temperature is too low, and the base material is decomposed when the temperature is too high. In addition, although baking may be performed in a powder state, it is preferable to perform baking in a pellet state. The solid-phase method requires firing at a relatively high temperature, but is a simple method and therefore has high productivity and is suitable for mass production.

The liquid phase method (coprecipitation method) is a method in which a base material or a compound containing the base material and an impurity element or a compound containing the impurity element are reacted in a solution, dried, and then fired. The particles of the luminescent material are uniformly distributed, and the reaction can proceed even at a low firing temperature with a small particle size.

As a base material used for the light-emitting material, sulfide, oxide, or nitride can be used. Examples of the sulfide include zinc sulfide (ZnS), cadmium sulfide (CdS), calcium sulfide (CaS), yttrium sulfide (Y ₂ S ₃ ), gallium sulfide (Ga ₂ S ₃ ), strontium sulfide (SrS), sulfide. Barium (BaS) or the like can be used. As the oxide, for example, zinc oxide (ZnO), yttrium oxide (Y ₂ O ₃ ), or the like can be used. As the nitride, for example, aluminum nitride (AlN), gallium nitride (GaN), indium nitride (InN), or the like can be used. Furthermore, zinc selenide (ZnSe), zinc telluride (ZnTe), and the like can also be used, such as calcium sulfide-gallium sulfide (CaGa ₂ S ₄ ), strontium sulfide-gallium (SrGa ₂ S ₄ ), barium sulfide-gallium (BaGa). _It may be a ternary mixed crystal such as ₂ S ₄ ).

As emission centers of localized emission, manganese (Mn), copper (Cu), samarium (Sm), terbium (Tb), erbium (Er), thulium (Tm), europium (Eu), cerium (Ce), praseodymium (Pr) or the like can be used. Note that a halogen element such as fluorine (F) or chlorine (Cl) may be added as charge compensation.

On the other hand, a light-emitting material containing a first impurity element that forms a donor level and a second impurity element that forms an acceptor level can be used as the emission center of donor-acceptor recombination light emission. As the first impurity element, for example, fluorine (F), chlorine (Cl), aluminum (Al), or the like can be used. For example, copper (Cu), silver (Ag), or the like can be used as the second impurity element.

In the case where a light-emitting material for donor-acceptor recombination light emission is synthesized using a solid-phase method, a base material, a first impurity element or a compound containing the first impurity element, a second impurity element, or a second impurity element Each compound containing an impurity element is weighed and mixed in a mortar, and then heated and fired in an electric furnace. As the base material, the above-described base material can be used, and examples of the first impurity element or the compound containing the first impurity element include fluorine (F), chlorine (Cl), and aluminum sulfide (Al ₂ S). ₃ ) or the like, and examples of the second impurity element or the compound containing the second impurity element include copper (Cu), silver (Ag), copper sulfide (Cu ₂ S), and silver sulfide (Ag). ₂ S) or the like can be used. The firing temperature is preferably 700 to 1500 ° C. This is because the solid phase reaction does not proceed when the temperature is too low, and the base material is decomposed when the temperature is too high. In addition, although baking may be performed in a powder state, it is preferable to perform baking in a pellet state.

In addition, as an impurity element in the case of using a solid phase reaction, a compound including a first impurity element and a second impurity element may be used in combination. In this case, since the impurity element is easily diffused and the solid-phase reaction easily proceeds, a uniform light emitting material can be obtained. Further, since no extra impurity element is contained, a light-emitting material with high purity can be obtained. As the compound including the first impurity element and the second impurity element, for example, copper chloride (CuCl), silver chloride (AgCl), or the like can be used.

Note that the concentration of these impurity elements may be 0.01 to 10 atom% with respect to the base material, and is preferably in the range of 0.05 to 5 atom%.

In the case of a thin-film inorganic EL, the electroluminescent layer is a layer containing the above-described luminescent material, and is a physical vapor deposition method such as a resistance heating vapor deposition method, a vacuum vapor deposition method such as an electron beam vapor deposition (EB vapor deposition) method, or a sputtering method ( PVD), metal organic chemical vapor deposition (CVD), chemical vapor deposition (CVD) such as hydride transport low pressure CVD, atomic layer epitaxy (ALE), or the like.

FIGS. 37A to 37C illustrate an example of a thin-film inorganic EL element that can be used as a light-emitting element. 37A to 37C, the light-emitting element includes a first electrode layer 50, an electroluminescent layer 51, and a second electrode layer 53.

The light-emitting element illustrated in FIGS. 37B and 37C has a structure in which an insulating layer is provided between the electrode layer and the electroluminescent layer in the light-emitting element in FIG. The light-emitting element illustrated in FIG. 37B includes an insulating layer 54 between the first electrode layer 50 and the electroluminescent layer 52, and the light-emitting element illustrated in FIG. 37C includes the first electrode layer 50. And an electroluminescent layer 52, and an insulating layer 54 b is provided between the second electrode layer 53 and the electroluminescent layer 52. Thus, the insulating layer may be provided only between one of the pair of electrode layers sandwiching the electroluminescent layer, or may be provided between both. Further, the insulating layer may be a single layer or a stacked layer including a plurality of layers.

In FIG. 37B, the insulating layer 54 is provided so as to be in contact with the first electrode layer 50, but the order of the insulating layer and the electroluminescent layer is reversed so as to be in contact with the second electrode layer 53. An insulating layer 54 may be provided.

In the case of a dispersion-type inorganic EL, a particulate luminescent material is dispersed in a binder to form a film-like electroluminescent layer. When particles having a desired size cannot be obtained sufficiently by the method for manufacturing a light emitting material, the particles may be processed into particles by pulverization or the like in a mortar or the like. A binder is a substance for fixing a granular light emitting material in a dispersed state and maintaining the shape as an electroluminescent layer. The light emitting material is uniformly dispersed and fixed in the electroluminescent layer by the binder.

In the case of a dispersion-type inorganic EL, the electroluminescent layer can be formed by a droplet discharge method capable of selectively forming an electroluminescent layer, a printing method (screen printing, offset printing, etc.), a coating method such as a spin coating method, dipping, etc. It is also possible to use a method or a dispenser method. The film thickness is not particularly limited, but is preferably in the range of 10 to 1000 nm. In the electroluminescent layer including the light emitting material and the binder, the ratio of the light emitting material may be 50 wt% or more and 80 wt% or less.

38A to 38C illustrate an example of a dispersion-type inorganic EL element that can be used as a light-emitting element. A light-emitting element in FIG. 38A has a stacked structure of a first electrode layer 60, an electroluminescent layer 62, and a second electrode layer 63, and a luminescent material 61 held in a binder in the electroluminescent layer 62. Including.

As a binder that can be used in this embodiment mode, an organic material or an inorganic material can be used, and a mixed material of an organic material and an inorganic material may be used. As the organic material, a polymer having a relatively high dielectric constant such as a cyanoethyl cellulose resin, or a resin such as polyethylene, polypropylene, polystyrene resin, silicone resin, epoxy resin, or vinylidene fluoride can be used. Alternatively, a heat-resistant polymer such as aromatic polyamide, polybenzimidazole, or siloxane resin may be used. Note that a siloxane resin corresponds to a resin including a Si—O—Si bond. Siloxane has a skeleton structure formed of a bond of silicon (Si) and oxygen (O). As a substituent, an organic group containing at least hydrogen (for example, an alkyl group or an aryl group) is used. A fluoro group may be used as a substituent. Alternatively, an organic group containing at least hydrogen and a fluoro group may be used as a substituent. Moreover, resin materials such as vinyl resins such as polyvinyl alcohol and polyvinyl butyral, phenol resins, novolac resins, acrylic resins, melamine resins, urethane resins, and oxazole resins (polybenzoxazole) may be used. Further, for example, a photo-curing type can be used. The dielectric constant can be adjusted by appropriately mixing fine particles of high dielectric constant such as barium titanate (BaTiO ₃ ) and strontium titanate (SrTiO ₃ ) with these resins.

Examples of the inorganic material included in the binder include silicon oxide (SiO _x ), silicon nitride (SiN _x ), silicon containing oxygen and nitrogen, aluminum nitride (AlN), aluminum containing oxygen and nitrogen, or aluminum oxide (Al ₂ O ₃ ), Titanium oxide (TiO ₂ ), BaTiO ₃ , SrTiO ₃ , lead titanate (PbTiO ₃ ), potassium niobate (KNbO ₃ ), lead niobate (PbNbO ₃ ), tantalum oxide (Ta ₂ O ₅ ), tantalate A material selected from substances including barium (BaTa ₂ O ₆ ), lithium tantalate (LiTaO ₃ ), yttrium oxide (Y ₂ O ₃ ), zirconium oxide (ZrO ₂ ), ZnS, and other inorganic materials can be used. . By including an inorganic material having a high dielectric constant in the organic material (by addition or the like), the dielectric constant of the electroluminescent layer made of the light emitting material and the binder can be further controlled, and the dielectric constant can be further increased. .

In the manufacturing process, the light-emitting material is dispersed in a solution containing a binder, but as a solvent for the solution containing a binder that can be used in this embodiment, a method of forming an electroluminescent layer by dissolving the binder material (various types) A solvent capable of producing a solution having a viscosity suitable for a wet process) and a desired film thickness may be appropriately selected. For example, when a siloxane resin is used as a binder, propylene glycol monomethyl ether, propylene glycol monomethyl ether acetate (also referred to as PGMEA), 3-methoxy-3-methyl-1-butanol (also referred to as MMB) can be used. Etc. can be used.

The light-emitting elements illustrated in FIGS. 38B and 38C have a structure in which an insulating layer is provided between the electrode layer and the electroluminescent layer in the light-emitting element in FIG. The light-emitting element illustrated in FIG. 38B includes an insulating layer 64 between the first electrode layer 60 and the electroluminescent layer 62, and the light-emitting element illustrated in FIG. 38C includes the first electrode layer 60. And an electroluminescent layer 62, and an insulating layer 64 b between the second electrode layer 63 and the electroluminescent layer 62. Thus, the insulating layer may be provided only between one of the pair of electrode layers sandwiching the electroluminescent layer, or may be provided between both. Further, the insulating layer may be a single layer or a stacked layer including a plurality of layers.

In FIG. 38B, the insulating layer 64 is provided so as to be in contact with the first electrode layer 60; however, the order of the insulating layer and the electroluminescent layer is reversed so as to be in contact with the second electrode layer 63. An insulating layer 64 may be provided on the substrate.

An insulating layer such as the insulating layer 54 in FIG. 37 and the insulating layer 64 in FIG. 38 is not particularly limited, but preferably has a high dielectric breakdown voltage, a dense film quality, and a dielectric constant. High is preferred. For example, silicon oxide (SiO ₂ ), yttrium oxide (Y ₂ O ₃ ), titanium oxide (TiO ₂ ), aluminum oxide (Al ₂ O ₃ ), hafnium oxide (HfO ₂ ), tantalum oxide (Ta ₂ O ₅ ), Barium titanate (BaTiO ₃ ), strontium titanate (SrTiO ₃ ), lead titanate (PbTiO ₃ ), silicon nitride (Si ₃ N ₄ ), zirconium oxide (ZrO ₂ ), etc., a mixed film thereof, or two or more kinds thereof A laminated film can be used. These insulating films can be formed by sputtering, vapor deposition, CVD, or the like. The insulating layer may be formed by dispersing particles of these insulating materials in a binder. The binder material may be formed using the same material and method as the binder contained in the electroluminescent layer. The film thickness is not particularly limited, but is preferably in the range of 10 to 1000 nm.

The light-emitting element described in this embodiment can emit light by applying a voltage between a pair of electrode layers sandwiching an electroluminescent layer, but can operate in either direct current drive or alternating current drive.

This embodiment can be used in combination with any of the above embodiments.

In the present invention, by dispersing the photocatalytic substance in the organic compound layer, the organic compound is decomposed (destroyed) using the photocatalytic function of the photocatalytic substance to roughen the organic compound in the layer, and the element layer is peeled from the substrate. Therefore, since it is not necessary to apply a large force to the element layer for peeling, the element is not destroyed in the peeling process, and can be freely transferred to various substrates with a good shape.

Therefore, since it can be freely transferred to various substrates, the range of substrate material selectivity is widened. In addition, an inexpensive material can be selected as the substrate, so that not only a wide function can be provided depending on the application, but also a display device can be manufactured at low cost.

According to the present invention, a semiconductor device and a display device can be manufactured by using a peeling process so that the transfer process can be performed in a good state while maintaining the shape and characteristics before peeling. Therefore, a highly reliable semiconductor device and display device can be manufactured with high yield without complicating the device and the process.

(Embodiment 10)
Next, a mode in which a driver circuit for driving is mounted on the display panel manufactured according to the above embodiment will be described.

FIG. 27A is a top view illustrating a structure of a display panel according to the present invention. A pixel portion 2701 in which pixels 2702 are arranged in a matrix over a substrate 2700 having an insulating surface, a scan line side input terminal 2703, a signal A line side input terminal 2704 is formed. The number of pixels may be provided in accordance with various standards. For full color display using XGA and RGB, 1024 × 768 × 3 (RGB), and for full color display using UXGA and RGB, 1600 × 1200. If it corresponds to x3 (RGB) and full spec high vision and is full color display using RGB, it may be 1920 x 1080 x 3 (RGB).

The pixels 2702 are arranged in a matrix by a scan line extending from the scan line side input terminal 2703 and a signal line extending from the signal line side input terminal 2704 intersecting. Each pixel of the pixel portion 2701 is provided with a switching element and a pixel electrode layer connected to the switching element. A typical example of a switching element is a TFT. By connecting the gate electrode layer side of the TFT to a scanning line and the source or drain side to a signal line, each pixel can be controlled independently by a signal input from the outside. It is said.

FIG. 27A illustrates a structure of a display panel in which signals input to the scan lines and the signal lines are controlled by an external driver circuit. As illustrated in FIG. 28A, COG (Chip on The driver IC 2751 may be mounted on the substrate 2700 by a glass method. As another mounting mode, a TAB (Tape Automated Bonding) method as shown in FIG. 28B may be used. The driver IC may be formed on a single crystal semiconductor substrate or may be a circuit in which a TFT is formed on a glass substrate. In FIG. 28, the driver IC 2751 is connected to an FPC (Flexible Printed Circuit) 2750.

In the case where a TFT provided for a pixel is formed using a crystalline semiconductor, a scan line driver circuit 3702 can be formed over a substrate 3700 as shown in FIG. In FIG. 27B, the pixel portion 3701 is controlled by an external driver circuit connected to the signal line side input terminal 3704 and a scan line driver circuit 3702. In the case where a TFT provided for a pixel is formed using a polycrystalline (microcrystalline) semiconductor, a single crystal semiconductor, or the like with high mobility, as illustrated in FIG. 27C, a pixel portion 4701, a scan line driver circuit 4702, and a signal The line driver circuit 4704 can be formed over the substrate 4700 integrally.

First, a display device employing a COG method is described with reference to FIG. A pixel portion 2701 for displaying information such as characters and images is provided over the substrate 2700. A substrate provided with a plurality of drive circuits is divided into a rectangular shape, and a divided drive circuit (also referred to as a driver IC) 2751 is mounted on the substrate 2700. FIG. 28A illustrates a mode in which a plurality of driver ICs 2751 and an FPC 2750 are mounted on the tip of the driver ICs 2751. Alternatively, the size of the division may be approximately the same as the length of the side of the pixel portion on the signal line side, and the FPC may be mounted on the tip of the single driver IC.

Alternatively, a TAB method may be employed. In that case, a plurality of tapes may be attached and driver ICs may be mounted on the tapes as shown in FIG. As in the case of the COG method, a single driver IC may be mounted on a single tape. In this case, a metal piece or the like for fixing the driver IC may be attached together due to strength problems.

A plurality of driver ICs mounted on these display panels may be formed on a rectangular substrate having a side of 300 mm to 1000 mm or more from the viewpoint of improving productivity.

That is, a plurality of circuit patterns having a drive circuit portion and an input / output terminal as one unit may be formed on the substrate, and finally divided and taken out. The long side of the driver IC may be formed in a rectangular shape having a long side of 15 to 80 mm and a short side of 1 to 6 mm in consideration of the length of one side of the pixel portion and the pixel pitch. Or a length obtained by adding one side of the pixel portion and one side of each driver circuit.

The advantage of the external dimensions of the driver IC over the IC chip lies in the length of the long side. When a driver IC formed with a long side of 15 to 80 mm is used, the number required for mounting corresponding to the pixel portion is as follows. This is less than when an IC chip is used, and the manufacturing yield can be improved. Further, when a driver IC is formed over a glass substrate, the shape of the substrate used as a base is not limited, and thus productivity is not impaired. This is a great advantage compared with the case where the IC chip is taken out from the circular silicon wafer.

In the case where the scan line driver circuit 3702 is formed over the substrate as shown in FIG. 27B, a driver IC in which a driver circuit driver circuit on the signal line side is formed in a region outside the pixel portion 3701. Is implemented. These driver ICs are drive circuits on the signal line side. In order to form a pixel region corresponding to RGB full color, the number of signal lines in the XGA class is 3072 and the number in the UXGA class is 4800. The signal lines formed in such a number are divided into several blocks at the end of the pixel portion 3701 to form lead lines, and are collected according to the pitch of the output terminals of the driver IC.

The driver IC is preferably formed of a crystalline semiconductor formed over a substrate, and the crystalline semiconductor is preferably formed by irradiating continuous-emitting laser light. Therefore, a continuous light emitting solid state laser or gas laser is used as an oscillator for generating the laser light. When a continuous light emission laser is used, a transistor can be formed using a polycrystalline semiconductor layer having a large grain size with few crystal defects. In addition, since the mobility and response speed are good, high-speed driving is possible, the operating frequency of the element can be improved as compared with the prior art, and there is less variation in characteristics, so that high reliability can be obtained. Note that for the purpose of further improving the operating frequency, the channel length direction of the transistor and the scanning direction of the laser light are preferably matched. This is because, in the laser crystallization process using a continuous-wave laser, the highest mobility is obtained when the channel length direction of the transistor and the scanning direction of the laser beam with respect to the substrate are substantially parallel (preferably −30 ° to 30 °). Is obtained. Note that the channel length direction corresponds to the direction in which current flows in the channel formation region, in other words, the direction in which charges move. The transistor manufactured in this way has an active layer composed of a polycrystalline semiconductor layer in which crystal grains extend in the channel length direction. This means that the crystal grain boundaries are formed substantially along the channel length direction. Means that.

In order to perform laser crystallization, it is preferable to significantly narrow down the laser beam, and the width of the laser beam shape (beam spot) should be about 1 mm to 3 mm, which is the same width of the short side of the driver IC. Is good. In order to ensure a sufficient and efficient energy density for the irradiated object, the laser light irradiation region is preferably linear. However, the line shape here does not mean a line in a strict sense, but means a rectangle or an ellipse having a large aspect ratio. For example, the aspect ratio is 2 or more (preferably 10 or more and 10,000 or less). In this manner, a method for manufacturing a display device with improved productivity can be provided by setting the width of the laser beam shape (beam spot) to the same length as the short side of the driver IC.

As shown in FIGS. 28A and 28B, driver ICs may be mounted as both the scanning line driver circuit and the signal line driver circuit. In that case, the specifications of the driver ICs used on the scanning line side and the signal line side may be different.

In the pixel region, signal lines and scanning lines intersect to form a matrix, and transistors are arranged corresponding to the respective intersections. The present invention is characterized in that a TFT having an amorphous semiconductor or semi-amorphous semiconductor as a channel portion is used as a transistor arranged in a pixel region. The amorphous semiconductor is formed by a method such as a plasma CVD method or a sputtering method. A semi-amorphous semiconductor can be formed by a plasma CVD method at a temperature of 300 ° C. or lower. For example, even a non-alkali glass substrate having an outer dimension of 550 × 650 mm has a film thickness necessary for forming a transistor. Is formed in a short time. Such a feature of the manufacturing technique is effective in manufacturing a large-screen display device. In addition, a semi-amorphous TFT can obtain a field effect mobility of ² to 10 cm ² / V · sec by forming a channel formation region with SAS. In addition, when the present invention is used, a pattern can be formed in a desired shape with good controllability, and such a fine wiring with a short channel width can be stably formed without causing a defect such as a short circuit. . A TFT having electric characteristics necessary for sufficiently functioning a pixel can be formed. Therefore, this TFT can be used as a switching element for a pixel or an element constituting a driving circuit on the scanning line side. Therefore, a display panel that realizes system-on-panel can be manufactured.

By using TFTs in which the semiconductor layer is formed of SAS, the scanning line side driver circuit can also be integrally formed on the substrate. In the case of using TFTs in which the semiconductor layer is formed of AS, the scanning line side driver circuit and the signal A driver IC may be mounted on both the line side driver circuits.

In that case, it is preferable that the specifications of the driver ICs used on the scanning line side and the signal line side are different. For example, although a transistor constituting the driver IC on the scanning line side is required to have a withstand voltage of about 30 V, the driving frequency is 100 kHz or less, and a relatively high speed operation is not required. Therefore, it is preferable to set the channel length (L) of the transistors forming the driver on the scanning line side to be sufficiently large. On the other hand, it is sufficient for the transistor of the driver IC on the signal line side to have a withstand voltage of about 12V, but the drive frequency is about 65 MHz at 3V, and high speed operation is required. Therefore, it is preferable to set the channel length and the like of the transistors constituting the driver on the micron rule. When the present invention is used, fine pattern formation can be performed with good controllability, and it is possible to sufficiently cope with such micron rule.

The method for mounting the driver IC is not particularly limited, and a COG method, a wire bonding method, or a TAB method can be used.

By setting the thickness of the driver IC to be the same as that of the counter substrate, the height between the two becomes substantially the same, which contributes to the reduction in thickness of the entire display device. In addition, since each substrate is made of the same material, thermal stress is not generated even when a temperature change occurs in the display device, and the characteristics of a circuit made of TFTs are not impaired. In addition, the number of driver ICs to be mounted in one pixel region can be reduced by mounting the drive circuit with a driver IC that is longer than the IC chip as shown in this embodiment.

  As described above, a driver circuit can be incorporated in the display panel.

(Embodiment 11)
A structure of a pixel of the display panel described in this embodiment will be described with reference to an equivalent circuit diagram illustrated in FIG. Note that in this embodiment, an example in which an organic EL element including an organic compound or an organic compound layer and an inorganic compound layer in an electroluminescent layer is used as a light-emitting element is described.

  In the pixel shown in FIG. 19A, a signal line 710, a power supply line 711, a power supply line 712, a power supply line 713 are arranged in the column direction, and a scanning line 714 is arranged in the row direction. The pixel further includes a switching TFT 701, a driving TFT 703, a current control TFT 704, a capacitor element 702, and a light emitting element 705.

  The pixel shown in FIG. 19C is different from the pixel shown in FIG. 19A except that the gate electrode of the TFT 703 is connected to the power supply line 715 arranged in the row direction. is there. That is, both pixels shown in FIGS. 19A and 19C show the same equivalent circuit diagram. However, in the case where the power supply line 712 is arranged in the column direction (FIG. 19A) and the power supply line 715 is arranged in the row direction (FIG. 19C), each power supply line is conductive on a different layer. Formed with body layers. Here, attention is paid to the wiring to which the gate electrode of the driving TFT 703 is connected, and FIGS. 19A and 19C are shown separately to show that the layers for producing these are different.

  As a feature of the pixel shown in FIGS. 19A and 19C, a TFT 703 and a TFT 704 are connected in series in the pixel.

Note that the TFT 703 operates in a saturation region and has a role of controlling a current value flowing through the light emitting element 705, and the TFT 704 has a role of operating in a linear region and controls supply of current to the light emitting element 705. Both TFTs preferably have the same conductivity type in terms of manufacturing process. The TFT 703 may be a depletion type TFT as well as an enhancement type. In the present invention having the above structure, since the TFT 704 operates in a linear region, a slight change in V _GS of the TFT 704 does not affect the current value of the light emitting element 705. That is, the current value of the light emitting element 705 is determined by the TFT 703 operating in the saturation region. The present invention having the above structure can provide a display device in which luminance unevenness of a light emitting element due to variation in TFT characteristics is improved and image quality is improved.

  In the pixel shown in FIGS. 19A to 19D, a TFT 701 controls input of a video signal to the pixel. When the TFT 701 is turned on and a video signal is input into the pixel, the capacitor 702 The video signal is held in Note that FIGS. 19A and 19C illustrate the structure in which the capacitor 702 is provided; however, the present invention is not limited to this, and the capacity for holding a video signal can be covered by a gate capacity or the like. The capacitor 702 is not necessarily provided explicitly.

  The light-emitting element 705 has a structure in which an electroluminescent layer is sandwiched between two electrodes, and a potential difference is generated between the pixel electrode and the counter electrode (between the anode and the cathode) so that a forward bias voltage is applied. Is provided. The electroluminescent layer is composed of a wide variety of materials such as organic materials and inorganic materials. The luminescence in the electroluminescent layer includes light emission (fluorescence) when returning from a singlet excited state to a ground state, and a triplet excited state. And light emission (phosphorescence) when returning to the ground state.

  The pixel shown in FIG. 19B has the same pixel structure as that shown in FIG. 19A except that a TFT 706 and a scanning line 716 are added. Similarly, the pixel illustrated in FIG. 19D has the same pixel structure as that illustrated in FIG. 19C except that a TFT 706 and a scan line 716 are added.

  The TFT 706 is controlled to be turned on or off by a newly arranged scanning line 716. When the TFT 706 is turned on, the charge held in the capacitor 702 is discharged, and the TFT 704 is turned off. That is, the arrangement of the TFT 706 can forcibly create a state in which no current flows through the light emitting element 705. Accordingly, the configurations in FIGS. 19B and 19D can improve the duty ratio because the lighting period can be started simultaneously with or immediately after the start of the writing period without waiting for signal writing to all the pixels. It becomes possible.

  In the pixel shown in FIG. 19E, a signal line 720, a power supply line 721, a power supply line 722 are arranged in the column direction, and a scanning line 723 is arranged in the row direction. In addition, the pixel includes a switching TFT 741, a driving TFT 743, a capacitor element 742, and a light emitting element 744. The pixel illustrated in FIG. 19F has the same pixel structure as that illustrated in FIG. 19E except that a TFT 745 and a scanning line 724 are added. Note that the duty ratio of the structure in FIG. 19F can also be improved by the arrangement of the TFTs 745.

According to the present invention, a semiconductor device and a display device can be manufactured by using a peeling process so that the transfer process can be performed in a good state while maintaining the shape and characteristics before peeling. Therefore, a highly reliable display device can be manufactured with high yield without complicating the device and the process.

(Embodiment 12)
FIG. 22 shows an example in which an EL display module is formed using a substrate 2800 to which an element layer manufactured by applying the present invention is transferred. In FIG. 22, a pixel portion including pixels is formed over a substrate 2800 to which an element layer is transferred. As the substrate 2800 and the sealing substrate 2820, flexible substrates are used.

In FIG. 22, outside the pixel portion and between the driver circuit and the pixel, the same TFT as that formed in the pixel or the gate of the TFT and one of the source and the drain is connected to be the same as the diode. The protection circuit portion 2801 operated in the above is provided. As the driver circuit 2809, a driver IC formed of a single crystal semiconductor, a stick driver IC formed of a polycrystalline semiconductor film over a glass substrate, a driver circuit formed of SAS, or the like is applied.

The substrate 2800 to which the element layer is transferred is fixed to the sealing substrate 2820 through spacers 2806a and 2806b formed by a droplet discharge method. The spacer is preferably provided to keep the distance between the two substrates constant even when the substrate is thin and the area of the pixel portion is increased. A light-transmitting resin material may be filled in the gap between the substrate 2800 and the sealing substrate 2820 on the light-emitting element 2804 and the light-emitting element 2805 connected to the TFT 2802 and the TFT 2803, respectively, and may be solidified. Alternatively, anhydrous nitrogen or inert gas may be filled.

FIG. 22 shows a case where the light-emitting element 2804 and the light-emitting element 2805 have a top emission type (top emission type) configuration, in which light is emitted in the direction of the arrow shown in the drawing. Each pixel can perform multicolor display by changing the emission color of the pixels to red, green, and blue. At this time, by forming the colored layer 2807a, the colored layer 2807b, and the colored layer 2807c corresponding to each color on the sealing substrate 2820 side, the color purity of the emitted light can be increased. Alternatively, the pixel may be combined with a colored layer 2807a, a colored layer 2807b, or a colored layer 2807c as a white light emitting element.

A driver circuit 2809 which is an external circuit is connected to a scanning line or a signal line connection terminal provided at one end of the external circuit board 2811 through a wiring board 2810. In addition, a heat pipe 2813 and a heat radiating plate 2812 which are pipe-like high-efficiency heat conduction devices used to transmit heat to the outside of the device in contact with or close to the substrate 2800 are provided to enhance the heat radiation effect. It is also good.

In the present invention, by dispersing the photocatalytic substance in the organic compound layer, the organic compound is decomposed (destroyed) using the photocatalytic function of the photocatalytic substance to roughen the organic compound in the layer, and the element layer is peeled from the substrate. Therefore, since it is not necessary to apply a large force to the element layer for peeling, the element is not destroyed in the peeling process, and can be freely transferred to various substrates with a good shape. The remaining layer on the element layer side after peeling of the organic compound layer containing the photocatalytic substance is an organic compound layer 2815 containing the photocatalytic substance.

Therefore, since it can be freely transferred to various substrates, the range of substrate material selectivity is widened. In addition, an inexpensive material can be selected as the substrate, so that not only a wide function can be provided depending on the application, but also a display device can be manufactured at low cost.

  In FIG. 22, the top emission EL module is used. However, the configuration of the light emitting element and the arrangement of the external circuit board may be changed to have a bottom emission structure, of course, a dual emission structure in which light is emitted from both the upper and lower surfaces. In the case of a top emission type structure, an insulating layer serving as a partition wall may be colored and used as a black matrix. The partition walls can be formed by a droplet discharge method, and may be formed by mixing a resin material such as polyimide with a pigment-based black resin, carbon black, or the like, or may be a laminate thereof.

  Moreover, you may make it cut off the reflected light of the light which injects from the outside using a phase difference plate or a polarizing plate. An insulating layer serving as a partition wall may be colored and used as a black matrix. This partition wall can be formed by a droplet discharge method, and carbon black or the like may be mixed with a resin material such as polyimide, or may be a laminate thereof. A different material may be discharged to the same region a plurality of times by a droplet discharge method to form a partition wall. As the retardation plate, a λ / 4 plate or a λ / 2 plate may be used and designed so that light can be controlled. The structure is a TFT element substrate, a light emitting element, a sealing substrate (sealing material), a phase difference plate (λ / 4, λ / 2), and a polarizing plate in order, and light emitted from the light emitting element passes through them. The light is emitted from the polarizing plate side to the outside. The retardation plate and the polarizing plate may be installed on the side from which light is emitted, and may be installed on both sides as long as the display is a double-sided emission type that emits light on both sides. Further, an antireflection film may be provided outside the polarizing plate. This makes it possible to display a higher-definition and precise image.

  Alternatively, in the substrate 2800 to which the element layer is transferred, a sealing structure may be formed by attaching a resin film to the side where the pixel portion is formed using a sealant or an adhesive resin. Various sealing methods such as resin sealing with resin, plastic sealing with plastic, and film sealing with a film can be used. A gas barrier film for preventing the permeation of water vapor may be provided on the surface of the resin film. By adopting a film sealing structure, further reduction in thickness and weight can be achieved.

According to the present invention, a semiconductor device and a display device can be manufactured by using a peeling process so that the transfer process can be performed in a good state while maintaining the shape and characteristics before peeling. Therefore, a highly reliable semiconductor device and display device can be manufactured with high yield without complicating the device and the process.

(Embodiment 13)
This embodiment will be described with reference to FIGS. 23A and 23B. FIGS. 23A and 23B illustrate an example in which a display device (a liquid crystal display module) is formed using a TFT substrate 2600 manufactured by applying the present invention.

FIG. 23A illustrates an example of a liquid crystal display module. A TFT substrate 2600 and a counter substrate 2601 are fixed to each other with a sealant 2602, and a pixel portion 2603 including a TFT and a liquid crystal layer 2604 are provided therebetween to form a display region. ing. The colored layer 2605 is necessary for color display. In the case of the RGB method, a colored layer corresponding to each color of red, green, and blue is provided corresponding to each pixel. A polarizing plate 2606, a polarizing plate 2607, and a diffusion plate 2613 are provided outside the TFT substrate 2600 and the counter substrate 2601. The light source is composed of a cold cathode tube 2610 and a reflection plate 2611. The circuit board 2612 is connected to the TFT substrate 2600 and a drive circuit 2608 provided on the TFT substrate 2600 by a flexible wiring board 2609, and a control circuit, a power supply circuit, etc. An external circuit is incorporated.

  The liquid crystal display module has a backlight. The backlight can be formed using a light-emitting member, and typically, a cold cathode tube, an LED, an EL light-emitting device, or the like can be used. The backlight of this embodiment mode preferably has flexibility. Furthermore, you may provide a reflecting plate and an optical film in a backlight.

The polarizing plate 2606 and the polarizing plate 2607 are bonded to the TFT substrate 2600 and the counter substrate 2601. Moreover, you may laminate | stack in the state which had the phase difference plate between the polarizing plate and the board | substrate. Further, if necessary, the polarizing plate 2606 on the viewing side may be subjected to an antireflection treatment.

The liquid crystal display module includes a TN (Twisted Nematic) mode, an IPS (In-Plane-Switching) mode, an FFS (Fringe Field Switching) mode, an MVA (Multi-domain Vertical Alignment) mode, and a PVA (SMB). Axial Symmetrical Aligned Micro-cell (OCB) mode, OCB (Optical Compensated Birefringence) mode, FLC (Ferroelectric Liquid Crystal) mode, AFLC (Anti-Ferroelectric Liquid) Kill.

FIG. 23B is an example in which an FS-LCD (Field Sequential) mode is applied to the liquid crystal display module of FIG. 23A, which is an FS-LCD (Field Sequential-LCD). The FS-LCD emits red light, green light, and blue light in one frame period, and can perform color display by combining images using time division. Further, since each light emission is performed by a light emitting diode or a cold cathode tube, a color filter is unnecessary. Therefore, it is not necessary to arrange the color filters of the three primary colors and limit the display area of each color, and it is possible to display all three colors in any area. On the other hand, since the three colors emit light in one frame period, a high-speed response of the liquid crystal is required. By applying the FLC mode using the FS method or the OCB mode to the display device of the present invention, a high-performance and high-quality display device or a liquid crystal television device can be completed.

The liquid crystal layer in the OCB mode has a so-called π cell structure. The π cell structure is a structure in which the pretilt angles of liquid crystal molecules are aligned in a plane-symmetric relationship with respect to the center plane between the active matrix substrate and the counter substrate. The alignment state of the π cell structure is splay alignment when no voltage is applied between the substrates, and shifts to bend alignment when a voltage is applied. This bend orientation is white. When a voltage is further applied, the bend-aligned liquid crystal molecules are aligned perpendicularly to both substrates, and light is not transmitted. In the OCB mode, high-speed response that is about 10 times faster than the conventional TN mode can be realized.

Further, as a mode corresponding to the FS method, HV (Half V) -FLC using a ferroelectric liquid crystal (FLC) capable of high-speed operation, SS (Surface Stabilized) -FLC, or the like can be used. . A nematic liquid crystal having a relatively low viscosity is used for the OCB mode, and a smectic liquid crystal having a ferroelectric phase can be used for HV-FLC and SS-FLC.

In addition, the high-speed optical response speed of the liquid crystal display module is increased by narrowing the cell gap of the liquid crystal display module. The speed can also be increased by reducing the viscosity of the liquid crystal material. The increase in speed is more effective when the pixel pitch of the pixel region of the liquid crystal display module is 30 μm or less. Further, the speed can be further increased by the overdrive method in which the applied voltage is increased (or decreased) for a moment.

The liquid crystal display module in FIG. 23B is a transmissive liquid crystal display module, and a red light source 2910a, a green light source 2910b, and a blue light source 2910c are provided as light sources. The light source is provided with a controller 2912 for controlling on / off of the red light source 2910a, the green light source 2910b, and the blue light source 2910c. The light emission of each color is controlled by the control unit 2912, light enters the liquid crystal, an image is synthesized using time division, and color display is performed.

This embodiment can be used in combination with any of the above embodiments.

In the present invention, by dispersing the photocatalytic substance in the organic compound layer, the organic compound is decomposed (destroyed) using the photocatalytic function of the photocatalytic substance to roughen the organic compound in the layer, and the element layer is peeled from the substrate. Therefore, since it is not necessary to apply a large force to the element layer for peeling, the element is not destroyed in the peeling process, and can be freely transferred to various substrates with a good shape.

Therefore, since it can be freely transferred to various substrates, the range of substrate material selectivity is widened. In addition, an inexpensive material can be selected as the substrate, so that not only a wide function can be provided depending on the application, but also a display device can be manufactured at low cost.

According to the present invention, a semiconductor device and a display device can be manufactured by using a peeling process so that the transfer process can be performed in a good state while maintaining the shape and characteristics before peeling. Therefore, a highly reliable semiconductor device and display device can be manufactured with high yield without complicating the device and the process.

(Embodiment 14)
A backlight that can be used as a light source of a transmissive liquid crystal display device manufactured using the transposition process of the present invention will be described with reference to FIGS.

FIG. 30A is a top view of the backlight, and FIG. 30B is a cross-sectional view taken along line H-G in FIG. In FIG. 30, a reflective common electrode layer 6001 is provided over a flexible substrate 6000, and a wiring layer 6002a and a wiring layer 6002b functioning as an anode are formed over an insulating layer 6006. A light-emitting diode 6003a and a light-emitting diode 6003b are provided over the wiring layer 6002a and the wiring layer 6002b, respectively. The light-emitting diode 6003a is electrically connected to the wiring layer 6002a through an anisotropic conductive layer 6008 and is also connected to the common electrode layer 6001. Electrical connection is made through an opening (contact hole) 6004 a formed in the insulating layer 6006. Similarly, the light-emitting diode 6003b is also electrically connected to the wiring layer 6002b through the anisotropic conductive layer 6008, and is also electrically connected to the common electrode layer 6001 through an opening (contact hole) 6004b formed in the insulating layer 6006. .

The common electrode layer 6001 also functions as a reflective electrode that reflects incident light. The anisotropic conductive layer 6008 may be provided over the entire surface, but only the connection portion of the light emitting diode may be selectively provided.

FIG. 31A is a top view of the backlight, and FIG. 31B is a cross-sectional view taken along line I-J in FIG. The backlight in FIG. 31 is an example in which the connection between the light emitting diode, the common electrode layer, and the wiring layer is connected by a bump or a conductive metal paste (for example, silver (Ag) paste). In FIG. 31A, a wiring layer 6002a, a wiring layer 6002b, and a wiring layer 6002c are formed over the top and bottom of the drawing. Light emitting diodes connected to the wiring layer 6002a (such as the light emitting diode 6003a) emit red light (R), light emitting diodes connected to the wiring layer 6002b (such as the light emitting diode 6003b) emit green light (G), and light emitting diodes connected to the wiring layer 6002c. When the light emitting diodes of the same color are arranged for each wiring layer such as blue light emission (B) of the light emitting diode 6003c or the like, it is easy to control the voltage of the wiring layer. The light emitting diode 6003a is electrically connected to the common electrode layer 6001 and the wiring layer 6002a with a conductive paste 6009, and the light emitting diode 6003b is electrically connected to the common electrode layer 6001 and the wiring layer 6002b with a conductive paste 6009.

32A is a top view of the backlight, and FIGS. 32B and 32C are cross-sectional views taken along line K-L in FIG. The backlights of FIGS. 32A to 32C have a structure in which a reflective electrode layer and a common electrode layer are separated. In FIG. 32B, a reflective electrode layer 6021 is formed over a flexible substrate 6000, a light emitting diode 6003a is provided over the wiring layer 6002a and the common electrode layer 6020a, and over the wiring layer 6002b and the common electrode layer 6020b. A light emitting diode 6003b is provided. The light emitting diode 6003a is electrically connected to the common electrode layer 6020a through the conductive paste 6008c, and is electrically connected to the wiring layer 6002a through the conductive paste 6008d. The light emitting diode 6003b is electrically connected to the common electrode layer 6020b through the conductive paste 6008a, and is electrically connected to the wiring layer 6002b through the conductive paste 6008b.

FIG. 32C illustrates a structure in which an insulating layer 6010 including light scattering particles 6011 is provided over the reflective electrode layer 6021. The light scattering particles 6011 have an effect of scattering incident light and light reflected by the reflective electrode layer 6021. In the present embodiment, the reflective electrode layer may be mirror-reflected in a mirror state, or may be diffused and reflected as a reflective electrode layer that has irregularities on the surface and is whitened.

An example in which a plurality of light emitting diodes are provided over a flexible substrate 6100 will be described with reference to FIGS. When using a backlight having flexibility, there is a direction in which bending is frequently performed depending on a product. The backlight in FIG. 33A has a horizontally long rectangle when viewed from above, and the frequency of bending the long side in the directions of arrows 6105a and 6105b is high. In this case, the plurality of light-emitting diodes provided over the flexible substrate 6100 are rectangular when viewed from above. The light emitting diodes 6101a and 6101b are arranged so that the short sides of the light emitting diodes 6101a and 6101b are parallel to the frequently bent side of the flexible substrate 6000.

It is assumed that the frequency of bending in the directions of arrows 6205a and 6205b is high using a vertically-long flexible substrate 6200 as shown in FIG. In this case, the plurality of light-emitting diodes provided over the flexible substrate 6200 are rectangular when viewed from above. The light emitting diodes 6201a and 6201b are arranged so that the short sides of the light emitting diodes 6201a and 6201b are parallel to the frequently bent side of the flexible substrate 6200. When the frequency of bending is high or low depending on the purpose and shape of the display device provided as described above, it is easier to bend and damage less if it is arranged so that the side to be bent and the short side of the light emitting diode are parallel to each other in advance. Therefore, reliability can be improved.

34A and 34B illustrate a light-emitting diode 6401a and a light-emitting diode 6401b which are provided adjacent to each other with a distance b over a flexible substrate 6400. FIG. It is the thickness a of the light emitting diode 6401a and the light emitting diode 6401b. FIG. 34B is a diagram in which the flexible substrate 6400 including the light-emitting diodes 6401a and 6401b is bent in the directions of arrows 6405a and 6405b. As shown in FIG. 34, when the distance b between adjacent light emitting diodes is larger than twice the thickness a and b> 2a is satisfied, the light emitting diode 6401a and the light emitting diode 6401b are not in contact with each other and have flexibility. 6400 can be bent easily.

FIGS. 35A and 35B show examples in which a light emitting diode is covered with a resin layer. As shown in FIG. 35A, a light emitting diode 6151a covered with a resin layer 6152a and a light emitting diode 6151b covered with a resin layer 6152b are formed over a flexible substrate 6150 with a distance b. The maximum film thickness of the resin layer 6152a and the resin layer 6152b is the film thickness a. FIG. 35B is a diagram in which the flexible substrate 6150 including the light emitting diode 6151a and the resin layer 6152a and the light emitting diode 6151b and the resin layer 6152b is bent in the directions of the arrows 6154a and 6154b. As shown in FIG. 35, when the distance b between the adjacent resin layers and the light-emitting diodes covered with the resin layers is larger than twice the maximum film thickness a of the resin layers covering the light-emitting diodes and satisfies b> 2a, The flexible substrate 6150 can be easily bent without contact between the light-emitting diode 6151a covered with the layer 6152a and the light-emitting diode 6151b covered with the resin layer 6152b.

A sidelight-type flexible backlight illustrated in FIG. 36 includes a flexible light guide plate 6300, a light-emitting diode 6302 provided over a flexible substrate 6301, and light emitted from the light-emitting diode 6302. Reflecting sheets 6303a and 6303b are provided. The reflection sheet is arranged to efficiently guide light to the light guide plate. When the reflection sheet is arranged in a cylindrical shape, it is not easy to bend the backlight itself. However, it can be easily bent when the shape is not fixed to a cylindrical shape such as the reflective sheet 6303a and the reflective sheet 6303b in FIG. 36 shown in this embodiment mode. 30 to 34 can be used as appropriate for the arrangement of the light-emitting diode 6302 provided over the flexible substrate 6301 and the connection state with the reflective electrode layer, the common electrode layer, the wiring layer, and the like.

When a flexible backlight having the above structure is used for a flexible display device manufactured using the transfer process of the present invention, a flexible electronic device can be manufactured. An inexpensive material can be selected as the substrate, and not only can a wide range of functions be provided depending on the application, but also a display device can be manufactured at low cost.

  The structure of the backlight can also be used for liquid crystal display panels other than the present invention.

(Embodiment 15)
A backlight that can be used as a light source of a transmissive liquid crystal display device manufactured using the transposition process of the present invention will be described with reference to FIGS.

FIG. 39 illustrates a display device portion 418 including a flexible substrate 413, an element layer 415 including a liquid crystal element, a flexible counter substrate 416, a polarizing plate 417, a polarizing plate 411, a driver circuit 419, and an FPC 437. And a backlight 408 including a flexible substrate 401, a layer 402 having a light-emitting element including a first conductive layer, an electroluminescent layer, and a second conductive layer, and a flexible substrate 403. Show.

As the backlight 408 illustrated in FIG. 39, a light-emitting device including one or both of the organic EL element and the inorganic EL element described in the above embodiment can be used. Further, without using the present invention, a layer 402 having a light-emitting element including a first conductive layer, a light-emitting layer, and a second conductive layer is formed over a flexible substrate 401, and further flexible. An EL display device (light-emitting device) in which a substrate 401 including a light-emitting element and a layer 402 including a light-emitting element are sealed with a flexible substrate 403 can be used. Note that the first conductive layer, the light-emitting layer, and the second conductive layer are appropriately formed using a manufacturing method such as a droplet discharge method (represented by an IJ method), an evaporation method, a sputtering method, a printing method, or the like. Can be formed.

  Note that as the flexible substrate 403 of a light-emitting device that can be used for the backlight 408, a polarizing plate 411 illustrated in FIG. 39 may be used. In that case, a layer having a light-emitting element is formed over the flexible substrate 401, and the flexible substrate 401 and the layer 402 having a light-emitting element are sealed with a polarizing plate 411. After that, the polarizing plate 411 and the flexible substrate 413 can be attached to each other with a light-transmitting adhesive. As a result, the number of flexible substrates constituting the backlight can be reduced.

In addition, after the layer 402 having a light-emitting element is formed over the flexible substrate 401, the layer 402 having a light-emitting element and the flexible substrate are provided on the polarizing plate 411 provided on the flexible substrate 413. 401 can be bonded with an adhesive. As a result, the number of flexible substrates constituting the backlight can be reduced.

In addition, after the layer 402 having a light-emitting element is formed on one surface of the polarizing plate 411, a flexible substrate 401 is attached to one surface of the layer 402 having a light-emitting element and the polarizing plate 411 using an adhesive. After the attachment, the other surface of the polarizing plate 411 and the flexible substrate 413 may be attached using an adhesive. Further, after the layer 402 having a light-emitting element is formed on one surface of the polarizing plate 411, the other surface of the polarizing plate 411 and the flexible substrate 413 are attached using an adhesive, and then the polarizing plate 411 A flexible substrate 401 may be attached to one surface using an adhesive. As a result, the number of flexible substrates constituting the backlight can be reduced.

Further, a polarizing plate 411 may be used instead of the flexible substrate 401. That is, the polarizing plate 411 that seals the flexible substrate 413 and the light-emitting element layer 402 may be attached to the element layer 415 with an adhesive. As a result, the number of flexible substrates constituting the liquid crystal display panel can be reduced.

The light-emitting element formed in the layer 402 having the light-emitting element of this embodiment can be formed using a light-emitting element having a large area that covers the pixel portion. As such a light-emitting element, an element that emits white light is preferably used.

Alternatively, a linear light-emitting element may be formed as the light-emitting element formed in the layer 402 having a light-emitting element. An element that emits white light can be used as the light-emitting element. In addition, the light emitting elements are preferably arranged so that a blue light emitting element, a red light emitting element, and a green light emitting element are provided in each pixel. In this case, it is not necessary to provide a colored layer. Note that when a colored layer is provided, the color purity is increased and a liquid crystal display panel capable of vivid display is obtained.

As the light-emitting element formed in the layer 402 having a light-emitting element, an element that emits white light can be used for each pixel. In addition, a pixel of a blue light emitting element, a red light emitting element, and a green light emitting element may be provided for each pixel. As a result, a liquid crystal display panel capable of high-definition display is obtained.

When a flexible backlight having the above structure is used for a flexible display device manufactured using the transfer process of the present invention, a flexible electronic device can be manufactured. An inexpensive material can be selected as the substrate, and not only can a wide range of functions be provided depending on the application, but also a display device can be manufactured at low cost.

  The structure of the backlight can also be used for liquid crystal display panels other than the present invention.

(Embodiment 16)
With the display device formed according to the present invention, a television device (also simply referred to as a television or a television receiver) can be completed. FIG. 24 is a block diagram illustrating a main configuration of the television device. In the display panel, only a pixel portion 901 is formed as shown in FIG. 27A, and a scan line side driver circuit 903 and a signal line side driver circuit 902 are provided with a TAB method as shown in FIG. In the case of mounting by the COG method as shown in FIG. 28A, the TFT is formed as shown in FIG. 27B, and the pixel portion 901 and the scanning line side driver circuit 903 are mounted on the substrate. In the case where the signal line driver circuit 902 formed over is separately mounted as a driver IC, the pixel portion 901, the signal line driver circuit 902, and the scan line driver circuit 903 are formed over the substrate as shown in FIG. Although it may be integrally formed, any form may be used.

As other external circuit configurations, on the input side of the video signal, among the signals received by the tuner 904, the video signal amplification circuit 905 that amplifies the video signal and the signal output from the signal are red, green, and blue colors And a control circuit 907 for converting the video signal into the input specification of the driver IC. The control circuit 907 outputs signals to the scanning line side and the signal line side, respectively. In the case of digital driving, a signal dividing circuit 908 may be provided on the signal line side so that an input digital signal is divided into m pieces and supplied.

Of the signals received by the tuner 904, the audio signal is sent to the audio signal amplifier circuit 909, and the output is supplied to the speaker 913 via the audio signal processing circuit 910. The control circuit 911 receives control information on the receiving station (reception frequency) and volume from the input unit 912 and sends a signal to the tuner 904 and the audio signal processing circuit 910.

As shown in FIGS. 25A and 25B, these display modules can be incorporated into a housing to complete a television device. When an EL display module as shown in FIG. 22 is used, a liquid crystal television device can be completed when a liquid crystal display module as shown in FIG. 23 is used for the EL television device. In FIG. 25A, a main screen 2003 is formed by a display module, and a speaker portion 2009, operation switches, and the like are provided as accessory equipment. Thus, a television device can be completed according to the present invention.

A display panel 2002 is incorporated in a housing 2001, and general television broadcasting is received by a receiver 2005, and connected to a wired or wireless communication network via a modem 2004 (one direction (from a sender to a receiver)). ) Or bi-directional (between the sender and the receiver, or between the receivers). The television device can be operated by a switch incorporated in the housing or a separate remote control device 2006, and the remote control device 2006 also includes a display unit 2007 for displaying information to be output. good.

In addition, the television device may have a configuration in which a sub screen 2008 is formed using the second display panel in addition to the main screen 2003 to display channels, volume, and the like. In this structure, the main screen 2003 and the sub screen 2008 can be formed using the liquid crystal display panel of the present invention, the main screen 2003 is formed using an EL display panel with an excellent viewing angle, and the sub screen can be manufactured with low power consumption. You may form with the liquid crystal display panel which can be displayed. In order to prioritize the reduction in power consumption, the main screen 2003 may be formed using a liquid crystal display panel, the sub screen may be formed using an EL display panel, and the sub screen may blink. When the present invention is used, a highly reliable display device can be obtained even when such a large substrate is used and a large number of TFTs and electronic components are used.

FIG. 25B illustrates a television device having a large display portion of 20 to 80 inches, for example, which includes a housing 2010, an operation device 2012, a display portion 2011, a speaker portion 2013, and the like. The present invention is applied to manufacture of the display portion 2011. By using the present invention, the shape of the display portion can be freely designed, so that a television device having a desired shape can be manufactured.

In the present invention, by dispersing the photocatalytic substance in the organic compound layer, the organic compound is decomposed (destroyed) using the photocatalytic function of the photocatalytic substance to roughen the organic compound in the layer, and the element layer is peeled from the substrate. Therefore, since it is not necessary to apply a large force to the element layer for peeling, the element is not destroyed in the peeling process, and can be freely transferred to various substrates with a good shape.

According to the present invention, a semiconductor device and a display device can be manufactured by using a peeling process so that the transfer process can be performed in a good state while maintaining the shape and characteristics before peeling. Accordingly, a highly reliable semiconductor device and display device, and a television device including the semiconductor device and display device can be manufactured with high yield without complicating the device and the process.

Of course, the present invention is not limited to a television device, but can be applied to various applications such as personal computer monitors, information display boards at railway stations and airports, and advertisement display boards on streets. can do.

(Embodiment 17)
As an electronic apparatus according to the present invention, a television device (also simply referred to as a television or a television receiver), a camera such as a digital camera or a digital video camera, a mobile phone device (also simply referred to as a mobile phone or a mobile phone), a PDA, or the like Mobile information terminals, portable game machines, computer monitors, computers, sound reproduction apparatuses such as car audio, and image reproduction apparatuses equipped with recording media such as home game machines. A specific example will be described with reference to FIG.

A portable information terminal device illustrated in FIG. 26A includes a main body 9201, a display portion 9202, and the like. The display device of the present invention can be applied to the display portion 9202. As a result, a portable information terminal device that is lightweight, thin, and highly reliable can be provided.

A digital video camera shown in FIG. 26B includes a display portion 9701, a display portion 9702, and the like. The display device of the present invention can be applied to the display portion 9701. As a result, a lightweight and thin digital video camera with high reliability can be provided.

A cellular phone shown in FIG. 26C includes a main body 9101, a display portion 9102, and the like. The display device of the present invention can be applied to the display portion 9102. As a result, a lightweight and thin mobile phone with high reliability can be provided.

A portable television device illustrated in FIG. 26D includes a main body 9301, a display portion 9302, and the like. The display device of the present invention can be applied to the display portion 9302. As a result, a portable television device that is lightweight, thin, and highly reliable can be provided. In addition, the present invention can be applied to a wide variety of television devices, from a small one mounted on a portable terminal such as a cellular phone to a medium-sized one that can be carried and a large one (for example, 40 inches or more). The display device can be applied.

A portable computer shown in FIG. 26E includes a main body 9401, a display portion 9402, and the like. The display device of the present invention can be applied to the display portion 9402. As a result, a portable computer that is lightweight, thin, and highly reliable can be provided.

As described above, the display device of the present invention can provide an electronic device that is lightweight, thin, and highly reliable.

(Embodiment 18)
The configuration of the semiconductor device of this embodiment will be described with reference to FIG. As shown in FIG. 21, the semiconductor device 20 of the present invention has a function of communicating data without contact, and controls the power supply circuit 11, the clock generation circuit 12, the data demodulation / modulation circuit 13, and other circuits. A circuit 14, an interface circuit 15, a memory circuit 16, a data bus 17, an antenna (antenna coil) 18, a sensor 21, and a sensor circuit 22 are included.

The power supply circuit 11 is a circuit that generates various power supplies to be supplied to each circuit inside the semiconductor device 20 based on the AC signal input from the antenna 18. The clock generation circuit 12 is a circuit that generates various clock signals to be supplied to each circuit inside the semiconductor device 20 based on the AC signal input from the antenna 18. The data demodulation / modulation circuit 13 has a function of demodulating / modulating data communicated with the reader / writer 19. The control circuit 14 has a function of controlling the memory circuit 16. The antenna 18 has a function of transmitting / receiving electromagnetic waves or radio waves. The reader / writer 19 controls communication and control with the semiconductor device and processing related to the data. The semiconductor device is not limited to the above-described configuration, and may be a configuration in which other elements such as a power supply voltage limiter circuit and hardware dedicated to cryptographic processing are added.

The memory circuit 16 includes a memory element in which an organic compound layer or a phase change layer is sandwiched between a pair of conductive layers. Note that the memory circuit 16 may include only a memory element in which an organic compound layer or a phase change layer is sandwiched between a pair of conductive layers, or may include a memory circuit having another structure. The memory circuit having another configuration corresponds to, for example, one or more selected from DRAM, SRAM, FeRAM, mask ROM, PROM, EPROM, EEPROM, and flash memory.

The sensor 21 is formed of a semiconductor element such as a resistance element, a capacitive coupling element, an inductive coupling element, a photovoltaic element, a photoelectric conversion element, a thermoelectric element, a transistor, a thermistor, or a diode. The sensor circuit 22 detects a change in impedance, reactance, inductance, voltage or current, performs analog / digital conversion (A / D conversion), and outputs a signal to the control circuit 14.
(Embodiment 19)

According to the present invention, a semiconductor device that functions as a chip having a processor circuit (hereinafter also referred to as a processor chip, a wireless chip, a wireless processor, a wireless memory, or a wireless tag) can be formed. The semiconductor device of the present invention has a wide range of uses, such as banknotes, coins, securities, certificates, bearer bonds, packaging containers, books, recording media, personal items, vehicles, foods, clothing It can be used in health supplies, daily necessities, medicines and electronic devices.

  Since a semiconductor device having a memory element using the present invention has good adhesion inside the memory element, the peeling and transposing steps can be performed in a good state. Therefore, since it can be freely transferred to various substrates, an inexpensive material can be selected as the substrate, and not only can a wide range of functions be provided depending on the application, but also a semiconductor device can be manufactured at low cost. be able to. Therefore, the chip having a processor circuit according to the present invention also has features such as low cost, small size, thinness, and light weight, so it is suitable for a large amount of money, coins, etc., books that are often carried, personal items, clothes, etc. is there.

  Banknotes and coins are money that circulates in the market, and include those that are used in the same way as money in a specific area (cash vouchers), commemorative coins, and the like. Securities refer to checks, securities, promissory notes, and the like, and can be provided with a chip 190 including a processor circuit (see FIG. 29A). The certificate refers to a driver's license, a resident's card, and the like, and a chip 191 including a processor circuit can be provided (see FIG. 29B). Personal belongings refer to bags, glasses, and the like, and can be provided with a chip 197 including a processor circuit (see FIG. 29C). Bearer bonds refer to stamps, gift cards, and various gift certificates. Packaging containers refer to wrapping paper such as lunch boxes, plastic bottles, and the like, and can be provided with a chip 193 including a processor circuit (see FIG. 29D). Books refer to books, books, and the like, and can be provided with a chip 194 including a processor circuit (see FIG. 29E). The recording medium refers to DVD software, video tape, or the like, and can be provided with a chip 195 including a processor circuit (see FIG. 29F). The vehicles refer to vehicles such as bicycles, ships, and the like, and can be provided with a chip 196 including a processor circuit (see FIG. 29G). Foods refer to food products, beverages, and the like. Clothing refers to clothing, footwear, and the like. Health supplies refer to medical equipment, health equipment, and the like. Livingware refers to furniture, lighting equipment, and the like. Chemicals refer to pharmaceuticals, agricultural chemicals, and the like. Electronic devices refer to liquid crystal display devices, EL display devices, television devices (TV receivers, flat-screen TV receivers), mobile phones, and the like.

The semiconductor device of the present invention is fixed to an article by being mounted on a printed board, pasted on a surface, embedded, or the like. For example, a book is embedded in paper, and a package made of an organic resin is embedded in the organic resin, and is fixed to each article. Since the semiconductor device of the present invention realizes a small size, a thin shape, and a light weight, the design of the article itself is hardly impaired even after being fixed to the article. In addition, by providing the semiconductor device of the present invention in bills, coins, securities, bearer bonds, certificates, etc., an authentication function can be provided, and if this authentication function is utilized, counterfeiting can be prevented. it can. In addition, by providing the semiconductor device of the present invention in packaging containers, recording media, personal items, foods, clothing, daily necessities, electronic devices, etc., the efficiency of a system such as an inspection system can be improved.

Next, one mode of an electronic device in which the semiconductor device of the present invention is mounted will be described with reference to the drawings. An electronic device illustrated here is a mobile phone, which includes housings 5700 and 5706, a panel 5701, a housing 5702, a printed wiring board 5703, operation buttons 5704, and a battery 5705 (see FIG. 21B). The panel 5701 is removably incorporated in the housing 5702, and the housing 5702 is fitted to the printed wiring board 5703. The shape and size of the housing 5702 are changed as appropriate in accordance with the electronic device in which the panel 5701 is incorporated. A plurality of packaged semiconductor devices are mounted on the printed wiring board 5703, and the semiconductor device of the present invention can be used as one of them. The plurality of semiconductor devices mounted on the printed wiring board 5703 have any one function of a controller, a central processing unit (CPU), a memory, a power supply circuit, a sound processing circuit, a transmission / reception circuit, and the like.

The panel 5701 is connected to the printed wiring board 5703 through the connection film 5708. The panel 5701, the housing 5702, and the printed wiring board 5703 are housed in the housings 5700 and 5706 together with the operation buttons 5704 and the battery 5705. A pixel region 5709 included in the panel 5701 is arranged so as to be visible from an opening window provided in the housing 5700.

As described above, the semiconductor device of the present invention is characterized in that it is small, thin, and lightweight. With the above characteristics, it is possible to effectively use a limited space inside the casings 5700 and 5706 of the electronic device. .

Note that the housings 5700 and 5706 are examples of the appearance of a mobile phone, and the electronic device according to this embodiment can be changed into various modes depending on functions and uses.

The figure explaining this invention. The figure explaining this invention. The figure explaining this invention. The figure explaining this invention. The figure explaining this invention. 4A to 4D illustrate a method for manufacturing a display device of the present invention. 4A to 4D illustrate a method for manufacturing a display device of the present invention. 4A to 4D illustrate a method for manufacturing a display device of the present invention. 4A to 4D illustrate a method for manufacturing a display device of the present invention. 6A and 6B illustrate a display device of the present invention. 4A to 4D illustrate a method for manufacturing a display device of the present invention. 4A to 4D illustrate a method for manufacturing a display device of the present invention. 6A and 6B illustrate a method for manufacturing a display device of the present invention. 4A and 4B are a top view and a cross-sectional view of a display device of the present invention. 4A and 4B are a top view and a cross-sectional view of a display device of the present invention. Sectional drawing of the semiconductor device of this invention. Sectional drawing of the semiconductor device of this invention. 3A and 3B each illustrate a structure of a light-emitting element that can be applied to the present invention. FIG. 10 is a circuit diagram illustrating a structure of a pixel which can be applied to the display device of the present invention. Sectional drawing of the display apparatus of this invention. FIG. 11 illustrates an electronic device to which the present invention is applied. Sectional drawing explaining the structural example of EL display module of this invention. Sectional drawing explaining the structural example of the liquid crystal display module of this invention. 1 is a block diagram illustrating a main configuration of an electronic device to which the present invention is applied. FIG. 11 illustrates an electronic device to which the present invention is applied. FIG. 11 illustrates an electronic device to which the present invention is applied. The top view of the display apparatus of this invention. The top view of the display apparatus of this invention. 1 is a diagram showing a semiconductor device to which the present invention is applied. The figure which shows the backlight which can be applied to this invention. The figure which shows the backlight which can be applied to this invention. The figure which shows the backlight which can be applied to this invention. The figure which shows the backlight which can be applied to this invention. The figure which shows the backlight which can be applied to this invention. The figure which shows the backlight which can be applied to this invention. The figure which shows the backlight which can be applied to this invention. 3A and 3B each illustrate a structure of a light-emitting element that can be applied to the present invention. 3A and 3B each illustrate a structure of a light-emitting element that can be applied to the present invention. Sectional drawing of the display apparatus of this invention.

Claims (2)

Forming an organic compound layer in which a photocatalytic substance is dispersed on a light-transmitting first substrate;
Forming an element layer on the organic compound layer;
The organic compound layer is irradiated with light from the first substrate side,
Bonding a flexible second substrate on the element layer,
A method for manufacturing a semiconductor device, comprising: peeling off the second substrate to which the element layer is bonded from the first substrate. In claim 1 ,
A method for manufacturing a semiconductor device, comprising attaching a flexible third substrate to a side of the element layer from which the first substrate is peeled.

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