JP5212303B2 - Power converter - Google Patents

Description

    The present invention relates to a power conversion device having a switching element constituted by a unipolar element using a wide band gap semiconductor.

    Currently, silicon is widely used as a material for switching elements of power converters. However, the characteristics of switching elements made of silicon are approaching the theoretical limit. Wide bandgap semiconductors such as SiC (silicon carbide), GaN (gallium nitride), and diamond are being developed as materials exceeding the theoretical limit of silicon. The power device using this wide band gap semiconductor has the characteristics of ultra-low loss, high speed and high temperature operation. Of these wide bandgap semiconductors, SiC devices are the focus of attention as power devices, and SiC-MOSFETs are considered promising as switching elements in power converters.

    In an inverter or the like that drives an inductive load, a diode is connected in parallel to the switching element. Such a diode is called a freewheeling diode and functions to flow a reverse current. In an inverter using a SiC-MOSFET as a switching element, a SiC Schottky barrier diode (hereinafter referred to as SiC-SBD) is connected in parallel with the SiC-MOSFET, and this SiC-SBD is used as a free-wheeling diode. It is being considered.

Japanese Patent Laid-Open No. 10-327585 JP 2007-129848 A

Nikkan Kogyo Shimbun, "Semiconductor SiC Technology and Applications", edited by Hiroyuki Matsunami, 2003 Ohm, "Basic and application of SiC devices", Kazuo Arai and Sadayoshi Yoshida, 2003

    By the way, although it is possible to reduce the loss in the free-wheeling diode by adopting the configuration as described above, there is a problem that the size of the device is increased and the cost is increased because SiC-SBD is required.

    This invention is made | formed in view of this point, The objective is to reduce the conduction | electrical_connection loss of a switching element, without causing enlargement and a cost increase.

The first invention includes a switching circuit (110, 111, 120, 710) having a switching element (130) including a parasitic diode (131), which is configured by a unipolar element using a wide band gap semiconductor, and the switching element (130) is turned off. to, and a control unit that performs synchronous rectification from reverse current flows through the parasitic diode (131) and said switching element (130) is turned on at a predetermined timing (140,540,640) is used in an air conditioner, When the relationship between the effective current value (I _rms ) and the on-resistance (R _on ) of the switching element (130) under the heating intermediate load condition of the air conditioner is 0.9 and the voltage value is I _rms <0.9 / R It is configured to be _on .

    In the first invention, for example, when a reverse current flows through the switching element (130), the switching element (130) is in an off state, and a predetermined time (for example, FIG. After the elapse of the dead time period (3), the switching element (130) is turned on. Then, a reverse current flows through the switching element (130). Thus, by performing synchronous rectification, a reverse current flows through the switching element (130) without separately providing a freewheeling diode.

Further, in the first invention, the switching element (130) includes the parasitic diode (131), and the reverse current flows through the parasitic diode (131). The switching element (130) is turned on after elapse of a predetermined time (for example, the dead time period shown in FIG. 3) after the reverse current flows through the parasitic diode (131). Then, the reverse current flowing through the parasitic diode (131) flows to the switching element (130) in the on state. Thus, in the present invention, the reverse current flows through the switching element (130) with almost no flow of the parasitic diode (131).

Furthermore, in the said 1st invention, it uses as a power converter device of the motor for driving the compressor of the refrigerant circuit provided in an air conditioner.

Furthermore, in the first invention, if the switching element (130) is selected and synchronous rectification is performed, it is possible to operate at an efficiency equal to or higher than that without separately providing a freewheeling diode under heating intermediate load conditions.

According to a second invention, in the first invention, any one of SiC, GaN, and diamond is used as the wide band gap semiconductor.

In the second invention, the wide band gap semiconductor is composed of any one of SiC, GaN, and diamond.

In a third aspect based on the first aspect, the unipolar element is a MOSFET, JFET or HFET.

In the third invention, when the unipolar element is a MOSFET (Metal Oxide Semiconductor Field Effect Transistor), the switching element (130) includes the parasitic diode (131). In this case, by performing synchronous rectification, the reverse current flows through the switching element (130) with almost no flow through the parasitic diode (131). When the unipolar element is a JFET (Junction FET) or HFET (Heterostructure FET), the parasitic diode (131) is not formed in the switching element (130), but the reverse current is applied to the switching element (130) even when the switching element (130) is off. 130) can flow. In this case, by performing synchronous rectification, the reverse current flows through the switching element (130) in the on state with almost no flow through the switching element (130) in the off state.

According to a fourth invention, in any one of the first to third inventions, the switching circuit (110, 111, 120, 710) includes a converter circuit (110), a boost chopper circuit (111), an inverter circuit (120), and a matrix converter. At least one of the bidirectional switch circuits (710) is provided.

In the fourth aspect of the invention, the switching element (130) used in the converter circuit (110), the inverter circuit (120) and the like is subjected to switching control to perform synchronous rectification.

    As described above, in the present invention, synchronous rectification is performed to turn on the switching element (130) at a predetermined timing when the reverse current flows through the switching element (130). More specifically, in the present invention, at the timing when the reverse current flows through the switching element (130), the switching element (130) is turned off, and a predetermined time has passed after the reverse current flows through the switching element (130). After a lapse (at a predetermined timing), synchronous rectification is performed to turn on the switching element (130). Such synchronous rectification allows a reverse current to flow through the switching element (130). That is, a reverse current can be passed through the switching element (130) without separately providing a free-wheeling diode such as SiC-SBD. Therefore, since the free-wheeling diode becomes unnecessary, it is possible to reduce the size and the cost. Further, the conduction loss can be reduced as compared with the case where the reverse current flows through the return diode.

Furthermore, in the present invention , since it is not necessary to separately provide a freewheeling diode, it is possible to reduce the size and cost. Also, since the reverse current hardly flows through the parasitic diode (131) and flows through the switching element (130), the conduction loss is reduced as compared with the case where the reverse current flows only through the parasitic diode (131). be able to.

Furthermore, according to the present invention, when the relationship between the effective current value (I _rms ) and the on-resistance (R _on ) of the switching element (130) in the heating intermediate load condition of the air conditioner is 0.9 as a voltage value If the switching element is selected so that I _rms <0.9 / R _on and synchronous rectification is performed, the efficiency equal to or higher than that can be achieved without separately providing a freewheeling diode under heating intermediate load conditions. It is possible to achieve both efficiency.

FIG. 1 is a circuit diagram illustrating a configuration of the power conversion apparatus according to the first embodiment. FIG. 2 is a diagram for explaining the operation of the synchronous rectification according to the first embodiment. FIG. 3 is a signal waveform diagram of a control unit that performs synchronous rectification according to the first embodiment. FIG. 4 is a circuit diagram illustrating an operation during synchronous rectification according to the first embodiment. FIG. 5 is a diagram showing an example of a configuration in which SiC-SBD is connected as a free-wheeling diode in parallel with SiC-MOSFET. FIG. 6 is a diagram schematically illustrating the voltage-current characteristics of SiC-MOSFET, SiC-MOSFET parasitic diode, and SiC-SBD. FIG. 7 is a graph showing a change in load power factor of a motor of a conventional air conditioner and a temperature rise of the switching element with respect to immediate adjustment. FIG. 8 is a graph showing a change in load power factor of a motor of a conventional air conditioner and a temperature rise of the switching element with respect to immediate adjustment. FIG. 9 is a graph showing a change in the load power factor of the motor of the air conditioner according to Embodiment 1 and a temperature rise of the switching element with respect to immediate adjustment. FIG. FIG. 10 is a circuit diagram illustrating a configuration of the power conversion apparatus according to the second embodiment. FIG. 11 is a circuit diagram illustrating a configuration of a power conversion device according to the third embodiment. FIG. 12 is a circuit diagram according to the fourth embodiment, where (a) shows the configuration of the power conversion device, and (b) shows the configuration of the bidirectional switch circuit.

    Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings. In the drawings, the same or corresponding parts are denoted by the same reference numerals, and the description thereof will not be repeated. Further, the following embodiments and modifications are essentially preferable examples, and are not intended to limit the scope of the present invention, its application, or its use.

Embodiment 1
A first embodiment of the present invention will be described. As shown in FIG. 1, the power converter (100) of this embodiment is provided with the converter circuit (110), the inverter circuit (120), and the control part (140).

    The converter circuit (110) is connected to a single-phase AC power supply (10) and rectifies the AC power supply (10). The inverter circuit (120) converts the direct current rectified by the converter circuit (110) into a three-phase alternating current and supplies it to the motor (20). This motor (20) drives the compressor provided in the refrigerant circuit of an air conditioner. In the present embodiment, the AC power supply (10) is a single-phase AC, but may be a three-phase AC.

    The inverter circuit (120) performs synchronous rectification by six switching elements (130), and constitutes the switching circuit of the present invention. The switching element (130) is configured by a unipolar element (here, SiC-MOSFET) using a wide band gap semiconductor. This SiC-MOSFET (130) includes a parasitic diode (131). That is, the parasitic diode (131) is formed inside the SiC-MOSFET (130), not an externally attached diode. In the inverter circuit (120) of the present embodiment, the parasitic diode (131) of the SiC-MOSFET (130) is used as the freewheeling diode.

    The control unit (140) is configured to perform synchronous rectification by switching control of each switching element (130) of the inverter circuit (120).

    The controller (140) performs synchronous rectification by switching control as shown in FIG. First, an output voltage command is transmitted to the control unit (140). The output voltage command is a signal of a required output voltage of the motor (20) with respect to the load of the air conditioner, and is transmitted from the control unit of the air conditioner. The controller (140) switches each switching element (130) of the inverter circuit (120) so that the output voltage of the inverter circuit (120) becomes the received required output voltage. Specifically, the control unit (140) turns each of the upper arm SiC-MOSFET (130) and the lower arm SiC-MOSFET (130) on and off at a predetermined timing. That is, the control unit (140) turns on the SiC-MOSFET (130) of the upper arm and the SiC-MOSFET (130) of the lower arm alternately. Here, the SiC-MOSFET (130) of the lower arm is not turned on immediately after the period (period A) during which the SiC-MOSFET (130) of the upper arm is turned on, but is turned on after a predetermined dead time period. The Similarly, the SiC-MOSFET (130) of the upper arm is not turned on immediately after the period (period B) during which the SiC-MOSFET (130) of the lower arm is turned on, but is turned on after a predetermined dead time period. The This dead time period is a period in which all the SiC-MOSFETs (130) of the inverter circuit (120) are turned off in order to avoid a so-called short circuit.

    Synchronous rectification is performed in the inverter circuit (120) by the switching control of the control unit (140) described above. For example, when the current i (see FIG. 2) is positive (> 0), the lower-arm SiC-MOSFET (130) is synchronously rectified as shown in FIG. First, the SiC-MOSFET (130) of the upper arm is turned on, and a forward current flows through the SiC-MOSFET (130) (state shown in FIG. 4A). Next, the SiC-MOSFET (130) of the upper arm is turned off, and the SiC-MOSFET (130) of the lower arm is turned off at the timing when the reverse current flows, and the reverse current is applied to the lower arm. It flows through the parasitic diode (131) of the SiC-MOSFET (130) (the state shown in FIG. 4B). That is, reverse current flows through the parasitic diode 131 during the dead time period. When the dead time period elapses, the lower arm SiC-MOSFET (130) is turned on, and a reverse current flows through the SiC-MOSFET (130) instead of the parasitic diode (131) (FIG. 4C ) State.) Due to the synchronous rectification of the lower-arm SiC-MOSFET (130), the output voltage v0 (i> 0) (v0 refer to FIG. 2) is as shown in FIG. On the other hand, when the current i (see FIG. 2) is negative (<0), the upper-arm SiC-MOSFET (130) is synchronously rectified in the same manner as described above (as shown in FIG. 4). Due to the synchronous rectification of the upper-arm SiC-MOSFET (130), the output voltage v0 (i <0) (v0 refer to FIG. 2) is as shown in FIG. As can be seen, in any synchronous rectification, a voltage drop occurs due to conduction loss of the parasitic diode (131) in the dead time period in which the reverse current flows through the parasitic diode (131). However, after the dead time has elapsed, the SiC-MOSFET (130) is turned on so that the reverse current flows through the SiC-MOSFET (130), so that a voltage drop can be avoided. That is, in the inverter circuit (120), by performing synchronous rectification, a reverse current hardly flows through the parasitic diode (131) and flows into the SiC-MOSFET (130) with extremely low conduction loss. Thereby, it is possible to reduce conduction loss in the inverter circuit (120). Further, since there is no need to separately provide a freewheeling diode, it is possible to reduce the size and cost of the power conversion device (100). As described above, the synchronous rectification of the present embodiment turns on the SiC-MOSFET (130) at a predetermined timing when a reverse current flows through the parasitic diode (131) inside the SiC-MOSFET (130). is there. More specifically, the synchronous rectification of the present embodiment turns off the SiC-MOSFET (130) at the timing when a reverse current flows through the parasitic diode (131) in the SiC-MOSFET (130). Turn off the SiC-MOSFET (130) at a predetermined timing after turning it off (after the elapse of a predetermined dead time period), and apply a reverse current to the inside of the SiC-MOSFET (130) excluding the parasitic diode (131). It is a flow.

    Further, in the switching element (130) of the present embodiment, the same synchronous rectification is possible even if the switching element (130) is constituted by a JFET or HFET as a unipolar element. In this case, the parasitic diode (131) is omitted from the switching element (130). Here, as a representative, synchronous rectification in the case of JFET (130) will be described. In this case, first, the forward current flows when the JFET (130) of the upper arm is on. Next, the JFET (130) of the upper arm is turned off, and the JFET (130) of the lower arm is turned off at the timing when the reverse current flows, and the reverse current is applied to the JFET (130) of the lower arm. Flows inside. That is, during the dead time period, the reverse current flows through the JFET (130) in the off state. When the dead time period elapses, the lower arm JFET (130) is turned on, and the reverse current flows through the JFET (130) in the on state as it is. Here, the conduction state loss is higher in the off state of the JFET (130) than in the on state. Therefore, during the dead time period in which the reverse current flows through the off-state JFET (130), a voltage drop occurs as in the case of the SiC-MOSFET (130). However, after the dead time period has elapsed, the JFET (130) is turned on so that the reverse current flows through the on-state JFET (130), so that a voltage drop can be avoided. That is, in this case, by performing synchronous rectification, the reverse current hardly flows in the off-state JFET (130), but flows in the on-state JFET (130) with extremely low conduction loss. Thereby, it is possible to reduce conduction loss in the inverter circuit (120). In the case of JFET (130), SiC is used as the wide band gap semiconductor, and in the case of HFET (130), GaN (gallium nitride), GaAs (gallium arsenide), or the like is used as the wide band gap semiconductor.

    Here, as a conventional technique for performing synchronous rectification using a parasitic diode as a free-wheeling diode, there is a technique using a parasitic diode of a Si-MOSFET as a free-wheeling diode. However, since the rise voltage (ON voltage) of the parasitic diode of the Si-MOSFET is low (about 0.7V), the parasitic diode immediately conducts even after synchronous rectification. Therefore, the effect of synchronous rectification is small. On the other hand, when the parasitic diode (131) of the SiC-MOSFET (130) is used as a free-wheeling diode as in the present embodiment, the rising voltage (ON of the parasitic diode (131) of the SiC-MOSFET (130) is Since the voltage is high (about 3V), the parasitic diode (131) will not conduct unless the current increases when performing synchronous rectification. Therefore, if the parasitic diode (131) of the SiC-MOSFET (130) is used as a free-wheeling diode as in this embodiment, the effect of synchronous rectification is greater than when the parasitic diode of the Si-MOSFET is used as a free-wheeling diode. Become.

    Further, when synchronous rectification is performed using a Si-MOSFET parasitic diode as a freewheeling diode, a recovery current flows through the parasitic diode. Therefore, the switching speed is reduced to reduce the recovery current, the circuit configuration is devised to prevent the current from flowing through the parasitic diode, and the circuit is added to reduce the loss due to the recovery current (Patent Document 1, Patent Document 1). 2).

    As explained in [Background Art], when using a SiC-MOSFET as a switching element, a SiC-SBD (132) is connected in parallel to the SiC-MOSFET (130) as shown in FIG. The configuration to use is being considered. In this configuration, the SiC-MOSFET (130) has a low recovery current because the parasitic diode (131) rise voltage (approximately 3V) and the SiC-SBD (132) rise voltage (approximately 1V) are significantly different. -A reverse current can only flow through the SBD (132) and no reverse current can flow through the parasitic diode (131). It is known that SiC-SBD can significantly reduce recovery current and switching loss. Thus, with SiC-MOSFET, recovery current suppression can be realized more easily than with Si-MOSFET. In Si-MOSFET, the rising voltage of a diode that can be connected in parallel and used as a freewheeling diode is equivalent to the parasitic diode of SiC-MOSFET, and it is impossible to prevent reverse current from flowing through the parasitic diode.

    On the other hand, the recovery current of the SiC pn diode having the same structure as the parasitic diode (131) of the SiC-MOSFET (130) is small, and the switching loss is orders of magnitude smaller than that of the Si pn diode. Loss can be greatly reduced.

    The configuration shown in FIG. 5 requires a SiC-SBD (132), which increases the cost. However, as in this embodiment, the parasitic diode (131) of the SiC-MOSFET (130) is used as a freewheeling diode for synchronous rectification. If this is performed, it is not necessary to provide the SiC-SBD (132), and only the SiC-MOSFET (130) can be used, thereby reducing the cost. Further, by performing synchronous rectification, the SiC-MOSFET (130) side is energized, and the conduction loss can be suppressed as compared with the parasitic diode (131) alone. Especially at light loads, loss can be reduced compared to using SiC-SBD (132). This point will be described later.

    In FIG. 1, a configuration is employed in which synchronous rectification is applied to all six switching elements (130) in the inverter circuit (120) using the parasitic diode (131) as a freewheeling diode. It is also possible to apply only to the element (130).

<Switching element selection conditions>
In the inverter circuit (120) of this embodiment, the SiC-MOSFET (130) is energized by synchronous rectification, and the conventional configuration (SiC-SBD (132) is connected in parallel to the SiC-MOSFET (130) to be used as a free-wheeling diode) In the configuration (see FIG. 5), the SiC-SBD (132) is energized. Here, FIG. 6 shows an outline of the voltage-current characteristics of the SiC-MOSFET (130), the parasitic diode (131) of the SiC-MOSFET (130), and the SiC-SBD (132). SiC-MOSFET (130) exhibits constant resistance characteristics. The rising voltage (ON voltage) of the SiC-SBD (132) is about 1V, and the rising voltage (ON voltage) of the parasitic diode (131) of the SiC-MOSFET (130) is about 3V. The rising voltage is determined by the physical property value and cannot be set arbitrarily.

    Comparing the characteristics of the configuration of this embodiment and the conventional configuration (FIG. 5), the present embodiment is more efficient when the terminal voltage is equal to or lower than the rising voltage of the SiC-SBD (132). However, if more current flows, the conventional configuration becomes more efficient. For this reason, the conventional configuration using SiC-SBD (132) is more efficient in operating conditions where a large current flows, such as rated conditions and heavy loads. On the other hand, at a light load, the effect of the SiC-SBD (132) is low, and the configuration of the present embodiment having only the SiC-MOSFET (130) is more efficient.

Here, when i = (√2) I _rms sin θ is passed as the current, the losses of this embodiment and the conventional configuration (FIG. 5) are expressed by the following (Equation 1) to (Equation 3), respectively.
_-This embodiment (Formula 1) R _on × I _rms ²
・ Conventional configuration (Formula 2) Vf x (2√2 / π) Irms… However, Vf = const.
(Equation 3) αI _rms ² + β (2 (√2) / π) I _rms ... where Vf (i) = αi + β
I _rms is the effective current value, R _on is the on-resistance value of the SiC-MOSFET (130), and Vf is the terminal voltage of the SiC-SBD (132). (Equation 2) approximates Vf with a constant value, and (Equation 3) approximates Vf with a first order.

    As can be seen from FIG. 6 and the above equation, the loss of the present embodiment increases at the rated load and the heavy load, but the loss of the present embodiment decreases at the light load. Unlike general loads where efficiency at the rated load is important, operating time at light loads is long in air conditioning applications. For this reason, in order to save energy, the driving efficiency at light load is required. In Japan, the most significant effect on actual energy saving is an operating condition called a heating intermediate load, which is a condition that produces half of the rated heating capacity.

_{Select the} SiC-MOSFET (130) so that the conditions shown in (Equation 4) and (Equation 5) below are satisfied when the current effective value at the heating intermediate load is I _rms1 .
(Equation 4) I _rms1 <(2 (√2) / π) Vf / R _on ... However, Vf = const.
(Formula 5) I _rms1 <(2 (√2) / π) β / (R _on −α) where Vf (i) = αi + β
By selecting the switching element and performing synchronous rectification in this way, it is possible to achieve the same or higher efficiency in the heating intermediate load without using SiC-SBD (132), and to achieve both cost reduction and high efficiency. Is possible.

Further, considering that the rising voltage of the SiC-SBD (132) is about 1V, when Vf is 1V, the above (formula 4) can be simplified as the following (formula 6).
(Formula 6) I _rms1 <0.9 / R _on
This further facilitates switching element selection.

    Also, the air conditioner can be operated by changing the load power factor during light load or overload, or the torque (output current of the inverter circuit (120)) is constant and the rotation speed of the compressor (inverter circuit (120 ) Output voltage)). In the air conditioner, FIGS. 7 to 9 show changes in the temperature of the switching element when the load power factor is changed without changing the flowing current and during acceleration / deceleration. 7 and 8 show the temperature change of each element in the configuration in which the diode is connected in antiparallel with the switching element, and FIG. 9 shows the case where the inverter circuit (120) is configured by only the switching element (130). The temperature change of each element (130) is shown, respectively. 7 shows the change in temperature when the switching element is mainly composed of Si, and FIG. 8 shows the temperature change when the switching element is mainly composed of SiC and the chip is made smaller than in the case of FIG. Each is shown.

  As shown in FIGS. 7 and 8 above, when the load power factor is changed or during acceleration / deceleration, the current flowing through the switching element changes, so the temperature of the switching element changes depending on the operating conditions. On the other hand, in FIG. 9 in which the inverter circuit (120) is configured only by the switching element (130) capable of reverse conduction, the current flowing in the inverter circuit (120) does not change, regardless of the operating conditions. The temperature change of the switching element (130) becomes constant. Therefore, even if the operating condition of the air conditioner changes, if the flowing current is constant, the current flowing in the switching element (130) can be constant, and the temperature of the switching element (130) is constant. be able to. As a result, it is possible to improve the reliability during high temperature operation.

<< Embodiment 2 >>
A second embodiment of the present invention will be described. As shown in FIG. 10, in the power converter (500) of this embodiment, the parasitic diode (131) of the SiC-MOSFET (130) is used as the diode of the boost chopper circuit (111) used as the power factor correction circuit. doing. In this embodiment, the boost chopper circuit (111) is synchronously rectified in the same manner as in the first embodiment by the control unit (540). This synchronous rectification improves efficiency, especially at light loads. Moreover, since the SiC device is used, the recovery current is remarkably smaller than that of the Si device, and the switching loss can be reduced. In the present embodiment, the boost chopper circuit (111) constitutes the switching circuit of the present invention.

<< Embodiment 3 >>
Embodiment 3 of the present invention will be described. As shown in FIG. 11, in the power converter (600) of this embodiment, the parasitic diode (131) of the SiC-MOSFET (130) is used as the rectifier diode of the converter circuit (110), and is controlled by the control unit (640). Synchronous rectification is performed. In FIG. 11, the AC power source (10) is a single-phase AC, but may be a three-phase AC. Further, only a part of the rectifier diode of the converter circuit (110) may be a parasitic diode (131) of the SiC-MOSFET (130), and the rest may be a normal diode.

<< Embodiment 4 >>
Embodiment 4 of the present invention will be described. As shown to Fig.12 (a), the power converter device (700) of this embodiment is nine which can be combined with the electric wire of a three-phase alternating current power supply (30), and the stator electric wire of a three-phase alternating current motor (20). It is a matrix converter provided with a bidirectional switch circuit (710) using a switching element at each contact, and directly converts the input AC voltage into an AC voltage and outputs it without converting it into a DC voltage. Since the matrix converter has a small number of current-carrying elements, it can in principle be made compact and highly efficient. Since the bidirectional switch circuit (710) used in the matrix converter needs to be conducted in both directions, in this embodiment, two SiC-MOSFETs (130) are connected in series in the reverse direction as shown in FIG. 7B. Connected to form a bidirectional switch circuit (710). The bidirectional switch circuit (710) constitutes a switching circuit of the present invention.

    In each of the above embodiments, an SiC-MOSFET is shown as an example of a unipolar element using a wide band gap semiconductor, but the same can be applied to a unipolar element using another wide band gap semiconductor such as GaN or diamond.

    In the second to fourth embodiments, as a matter of course, a JFET or HFET may be used as the unipolar element instead of the MOSFET.

    As described above, the power conversion device according to the present invention is useful when applied to an air conditioner or the like in which efficiency at a light load is more important than efficiency at a rated load.

100 power converter
110 Converter circuit (switching circuit)
111 Boost chopper circuit (switching circuit)
120 Inverter circuit (switching circuit)
130 SiC-MOSFET, SiC-JFET (switching element)
131 Parasitic diode
140,540,640 Control unit
500,600,700 Power converter
710 Bidirectional switch circuit (switching circuit)

Claims (4)

A switching circuit (110, 111, 120, 710) having a switching element (130) configured by a unipolar element using a wide band gap semiconductor and including a parasitic diode (131) ;
Off the switching element (130), and a control unit that performs synchronous rectification from reverse current flows through the parasitic diode (131) and said switching element (130) is turned on at a predetermined timing (140,540,640) ,
Used in air conditioners,
When the relationship between the effective current value (I _rms ) and the on-resistance (R _on ) of the switching element (130) under the heating intermediate load condition of the air conditioner is 0.9 and the voltage value is I _rms <0.9 / R A power conversion device configured to be _on . Oite to claim 1,
One of SiC, GaN, and diamond is used as said wide band gap semiconductor, The power converter device characterized by the above-mentioned. In claim 1,
The power converter is characterized in that the unipolar element is a MOSFET, JFET or HFET. In any one of Claims 1 thru | or 3 ,
The switching circuit (110, 111, 120, 710) includes at least one of a converter circuit (110), a step-up chopper circuit (111), an inverter circuit (120), and a bidirectional switch circuit (710) of a matrix converter. Power conversion device.

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