JP5156120B1 - 有機白金化合物からなる化学蒸着用原料及び該化学蒸着用原料を用いた化学蒸着法 - Google Patents
有機白金化合物からなる化学蒸着用原料及び該化学蒸着用原料を用いた化学蒸着法 Download PDFInfo
- Publication number
- JP5156120B1 JP5156120B1 JP2011226568A JP2011226568A JP5156120B1 JP 5156120 B1 JP5156120 B1 JP 5156120B1 JP 2011226568 A JP2011226568 A JP 2011226568A JP 2011226568 A JP2011226568 A JP 2011226568A JP 5156120 B1 JP5156120 B1 JP 5156120B1
- Authority
- JP
- Japan
- Prior art keywords
- platinum
- vapor deposition
- chemical vapor
- compound
- thin film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/06—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
- C23C16/18—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material from metallo-organic compounds
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
- C07F15/00—Compounds containing elements of Groups 8, 9, 10 or 18 of the Periodic Table
- C07F15/0006—Compounds containing elements of Groups 8, 9, 10 or 18 of the Periodic Table compounds of the platinum group
- C07F15/0086—Platinum compounds
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
- C23C16/4485—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by evaporation without using carrier gas in contact with the source material
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Chemical Vapour Deposition (AREA)
- Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
Abstract
Description
本実施形態では、配位子であるアルキルアニオン(アルキル基)としてメチル基とプロピル基を配位させた、1,5−シクロオクタジエニルメチルプロピル白金(II)を製造した。化合物合成の反応式は次の通りである。以下、各段階について製造工程を説明する。
のエチルリチウム溶液24ml(0.012mol、溶媒としてベンゼン:シクロヘキサン=9:1混合溶媒を使用)を、15分間かけて滴下した。メカニカルスターラーで一晩攪拌を続けた後、塩化アンモニウム(1.5g)水溶液(20ml)を滴下して反応を停止させた。吸引ろ過により反応溶液に含まれる黒色沈殿を除去し、エバポレーターを用いて溶媒を留去した。得られた粗生成物は、黄色液体(3.74g)であった。粗生成物をカラムクロマトグラフィー(充填材:アルミナ、溶離液:ペンタン)により精製し、−80℃にて再結晶(溶媒:ペンタン)を行うことにより室温にて透明の液体となる目的化合物(融点:23℃)2.43g(収率64.7%)が得られた。
引用文献4記載の(1,5−ジメチル−1,5−シクロオクタジエニル)白金ジエチルを製造した。K2PtCl410gを水200mlに溶解し、n−プロピルアルコール100mlを加え、1,5−ジメチル−1,5−シクロオクタジエン20ml及び塩化第一錫0.18gを加えた。この混合物を約2日間攪拌した後、濾過し、得られた固形物にアセトンを加え懸濁した溶液にヨウ化ナトリウム7.2gを加え攪拌した。次に、アセトンを減圧下で留去し、残渣を水で洗浄後乾燥し8.5gの(1,5−ジメチル−1,5−シクロオクタジエニル)ジヨード白金(1,5−DMCODPtI2)を合成した。1,5−DMCODPtI2に、乾燥ジエチルエーテル100mを加え、ヨウ化エチルマグネシウムエーテル溶液(Grignard試薬)100mlを加え3時間攪拌した。冷却しながら、飽和塩化アンモニウム水溶液を加えて加水分解した後、濾過し、濾液をエーテル層と水層に分けた。水層をジエチルエーテル100mlで抽出し、エーテル層を合せて無水硫酸マグネシウムで乾燥した。エーテルを減圧下(30℃/2torr)で留去し、化合物である黄色液体2.3gを得た。
試料加熱温度:50℃
基板加熱温度:175、200、225、250、275、300℃
反応ガス:水素
流量:10sccm
圧力:60Pa
成膜時間:30分
Claims (3)
- R1とR2とが、プロピルとメチル、プロピルとエチル、又はエチルとメチルの組合せのいずれかである請求項1に記載の化学蒸着用原料。
- 有機白金化合物からなる原料を気化して原料ガスとし、前記原料ガスを基板表面に導入しつつ加熱する白金薄膜又は白金化合物薄膜の化学蒸着法において、
前記原料として請求項1又は請求項2に記載の化学蒸着用原料を用いる化学蒸着法。
Priority Applications (7)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2011226568A JP5156120B1 (ja) | 2011-10-14 | 2011-10-14 | 有機白金化合物からなる化学蒸着用原料及び該化学蒸着用原料を用いた化学蒸着法 |
TW101137604A TWI477640B (zh) | 2011-10-14 | 2012-10-12 | 有機鉑化合物構成的化學氣相沈積用原料及使用該化學氣相沈積用原料的化學氣相沈積法 |
EP12839806.2A EP2752420A4 (en) | 2011-10-14 | 2012-10-12 | RAW MATERIAL FOR CHEMICAL VAPOR DEPOSITION COMPRISING ORGANIC PLATINUM COMPOUND AND CHEMICAL VAPOR DEPOSITION PROCESS USING SAID RAW MATERIAL FOR CHEMICAL VAPOR DEPOSITION |
CN201280050214.9A CN103874705B (zh) | 2011-10-14 | 2012-10-12 | 包含有机铂化合物的化学气相沉积用原料及使用该化学气相沉积用原料的化学气相沉积法 |
KR1020147009380A KR101643480B1 (ko) | 2011-10-14 | 2012-10-12 | 유기 백금 화합물을 포함하는 화학 증착용 원료 및 상기 화학 증착용 원료를 사용한 화학 증착법 |
US14/344,603 US9382616B2 (en) | 2011-10-14 | 2012-10-12 | Chemical vapor deposition raw material comprising organoplatinum compound, and chemical vapor deposition method using the chemical vapor deposition raw material |
PCT/JP2012/076387 WO2013054863A1 (ja) | 2011-10-14 | 2012-10-12 | 有機白金化合物からなる化学蒸着用原料及び該化学蒸着用原料を用いた化学蒸着法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2011226568A JP5156120B1 (ja) | 2011-10-14 | 2011-10-14 | 有機白金化合物からなる化学蒸着用原料及び該化学蒸着用原料を用いた化学蒸着法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP5156120B1 true JP5156120B1 (ja) | 2013-03-06 |
JP2013087065A JP2013087065A (ja) | 2013-05-13 |
Family
ID=48013513
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2011226568A Active JP5156120B1 (ja) | 2011-10-14 | 2011-10-14 | 有機白金化合物からなる化学蒸着用原料及び該化学蒸着用原料を用いた化学蒸着法 |
Country Status (7)
Country | Link |
---|---|
US (1) | US9382616B2 (ja) |
EP (1) | EP2752420A4 (ja) |
JP (1) | JP5156120B1 (ja) |
KR (1) | KR101643480B1 (ja) |
CN (1) | CN103874705B (ja) |
TW (1) | TWI477640B (ja) |
WO (1) | WO2013054863A1 (ja) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2015082553A1 (en) * | 2013-12-03 | 2015-06-11 | Ppg Europe B.V. | Drier composition and use thereof |
CN104609361B (zh) * | 2014-12-23 | 2016-04-06 | 蒋鸥 | 一种互联型铂纳米薄膜的制备方法 |
JP5960321B1 (ja) * | 2015-05-12 | 2016-08-02 | 田中貴金属工業株式会社 | 有機白金化合物からなる化学蒸着用原料及び該化学蒸着用原料を用いた化学蒸着法 |
JP5952460B1 (ja) * | 2015-05-12 | 2016-07-13 | 田中貴金属工業株式会社 | 有機白金化合物からなる化学蒸着用原料及び該化学蒸着用原料を用いた化学蒸着法 |
JP6407370B1 (ja) * | 2017-07-25 | 2018-10-17 | 田中貴金属工業株式会社 | 有機白金化合物からなる気相蒸着用原料及び該気相蒸着用原料を用いた気相蒸着法 |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2730496B2 (ja) * | 1994-12-09 | 1998-03-25 | 三菱マテリアル株式会社 | 蒸気圧の高い有機金属化学蒸着による白金薄膜形成用有機白金化合物 |
US5783716A (en) | 1996-06-28 | 1998-07-21 | Advanced Technology Materials, Inc. | Platinum source compositions for chemical vapor deposition of platinum |
JP3321729B2 (ja) | 1998-04-03 | 2002-09-09 | 株式会社高純度化学研究所 | トリメチル(エチルシクロペンタジエニル)白金とそ の製造方法及びそれを用いた白金含有薄膜の製造方法 |
JP5088773B2 (ja) | 2007-03-19 | 2012-12-05 | 株式会社トリケミカル研究所 | 膜形成方法および膜形成材料 |
FR2940980B1 (fr) * | 2009-01-15 | 2011-07-29 | Centre Nat Rech Scient | Complexes metalliques pour le depot chimique en phase vapeur de platine |
-
2011
- 2011-10-14 JP JP2011226568A patent/JP5156120B1/ja active Active
-
2012
- 2012-10-12 EP EP12839806.2A patent/EP2752420A4/en not_active Withdrawn
- 2012-10-12 WO PCT/JP2012/076387 patent/WO2013054863A1/ja active Application Filing
- 2012-10-12 TW TW101137604A patent/TWI477640B/zh active
- 2012-10-12 US US14/344,603 patent/US9382616B2/en active Active
- 2012-10-12 CN CN201280050214.9A patent/CN103874705B/zh active Active
- 2012-10-12 KR KR1020147009380A patent/KR101643480B1/ko active Active
Also Published As
Publication number | Publication date |
---|---|
WO2013054863A1 (ja) | 2013-04-18 |
KR20140070591A (ko) | 2014-06-10 |
US20150030772A1 (en) | 2015-01-29 |
CN103874705B (zh) | 2016-08-17 |
JP2013087065A (ja) | 2013-05-13 |
EP2752420A4 (en) | 2015-03-18 |
TW201331405A (zh) | 2013-08-01 |
EP2752420A1 (en) | 2014-07-09 |
KR101643480B1 (ko) | 2016-07-27 |
CN103874705A (zh) | 2014-06-18 |
TWI477640B (zh) | 2015-03-21 |
US9382616B2 (en) | 2016-07-05 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP6065840B2 (ja) | トリス(ジアルキルアミド)アルミニウム化合物及び当該アルミニウム化合物を用いるアルミニウム含有薄膜の製造方法 | |
JP5375093B2 (ja) | 有機ルテニウム錯体及び当該ルテニウム錯体を用いたルテニウム薄膜の製造法 | |
JP5156120B1 (ja) | 有機白金化合物からなる化学蒸着用原料及び該化学蒸着用原料を用いた化学蒸着法 | |
KR101369366B1 (ko) | 이미드 착체, 그 제조방법, 금속 함유 박막 및 그 제조방법 | |
TWI532869B (zh) | 由釕錯合物所構成的化學蒸鍍原料及其製造方法和化學蒸鍍法 | |
JP6635950B2 (ja) | 液体前駆体組成物、その製造方法、及び前記組成物を利用した膜の形成方法 | |
JP5865352B2 (ja) | 化学蒸着用の有機白金化合物及び該有機白金化合物を用いた化学蒸着方法 | |
JP5732772B2 (ja) | ルテニウム錯体混合物、その製造方法、成膜用組成物、ルテニウム含有膜及びその製造方法 | |
JP5919882B2 (ja) | コバルト化合物の混合物、及び当該コバルト化合物の混合物を用いたコバルト含有薄膜の製造方法 | |
JP6565448B2 (ja) | 酸化アルミニウム膜の製造方法及び酸化アルミニウム膜の製造原料 | |
KR102618936B1 (ko) | 신규한 루테늄 유기금속화합물 및 이의 제조방법 | |
WO2017030150A1 (ja) | 酸化アルミニウム膜の製造方法、酸化アルミニウム膜の製造原料、及びアルミニウム化合物 | |
JP5817727B2 (ja) | マグネシウムビス(ジアルキルアミド)化合物、及び当該マグネシウム化合物を用いるマグネシウム含有薄膜の製造方法 | |
JP2022151955A (ja) | ジヒドロジシロキサン化合物及びその製造方法 | |
JP2005197675A (ja) | ハフニウム含有膜形成材料及び該材料から作製されたハフニウム含有膜 | |
JPH07188256A (ja) | 蒸気圧の高い有機金属化学蒸着による銀薄膜形成用有機銀化合物 | |
JP2010229112A (ja) | β−ジケトナト基を配位子として有するコバルト錯体及びそれを用いてコバルト含有薄膜を製造する方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20121130 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20121207 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20151214 Year of fee payment: 3 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 5156120 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |