JP5136515B2 - Solid-state imaging device - Google Patents

Description

  The present invention relates to a solid-state imaging device, and more particularly to a solid-state imaging device having a back surface wiring connected to an electrode pad provided on the surface of a semiconductor substrate in a state of penetrating the semiconductor substrate from the back surface of the semiconductor substrate.

  To reduce the size of the optical sensor device, a transparent substrate is bonded with a sealant at the periphery of the imaging area surface of a chip-sized semiconductor substrate, and electrode pads (bonding pads) provided from the back surface of the semiconductor substrate to the periphery of the imaging area surface There has been reported a solid-state imaging device in which a through-hole (through-hole) in a state of reaching a) is opened and a backside wiring formed by filling the through-hole with a conductive material is formed. The solid-state imaging device is packaged in a chip size by bonding a transparent substrate in the state of a wafer, forming the back surface wiring, and then dividing into individual pieces (for example, Patent Document 1, Non-Patent Document). 1).

  Here, an example of the above-described conventional solid-state imaging device will be described with reference to FIG. The solid-state imaging device 10 shown in this figure has an imaging area S formed by arranging photosensors and a semiconductor substrate 11 on the surface of which an electrode pad 12 drawn from the imaging area S is formed via a sealant 21. The transparent substrate 22 is bonded.

  The imaging area S is provided at the center of the surface of the semiconductor substrate 11. An insulating film 13 made of, for example, silicon oxide (SiO 2) is provided on the semiconductor substrate 11, and the electrode pad 12 is provided on the insulating film 13 at the periphery of the semiconductor substrate 11. The electrode pad 12 is made of an aluminum (Al) thin film having a thickness of about several hundred nm.

  The semiconductor substrate 11 and the insulating film 13 described above are provided with a through hole 14 extending from the electrode pad 12 to the back surface 11a of the semiconductor substrate 11, and in a state of covering the side wall of the through hole 14, An insulating film 15 is provided on the back surface 11a. In addition, in the through hole 14 provided with the insulating film 15, a back surface wiring 16 made of a copper (Cu) film having a thickness of several tens of μm is formed on the back surface of the semiconductor substrate 11 so as to cover the inner wall of the through hole 14. Is provided.

  In the state where the through hole 14 is embedded, the back surface protective resin 17 is provided on the back surface wiring 16 and the insulating film 15, and an opening portion 17 a reaching the back surface wiring 16 is provided. The opening portion 17 a Bumps 18 serving as external connection terminals are provided on the surface of the back surface wiring 16 exposed from the surface.

  On the other hand, the sealing agent 21 is made of an organic insulating material having adhesiveness, and is applied and formed with a film thickness of several tens of μm on the side of the semiconductor substrate 11 where the electrode pads 12 are provided. Further, a transparent substrate 22 made of a glass substrate is bonded via the sealant 21.

JP-A-2005-202101

ASET: SEMI Forum Japan 2005 Proceedings, p.46 (JISSO Seminar June 7, 2005 SEMI Japan Planning)

  However, as shown in FIG. 9, in the solid-state imaging device 10 as described above, the electrode pad 12 made of an Al thin film of several hundred nm is in contact with the sealing agent 21 having a thickness of several tens of μm and the back surface wiring 16. Since the glass transition temperature (Tg) of the sealing agent 21 is generally low, the back surface wiring 16 is formed by solder reflow when forming the bumps 18 and the thermal process when forming the back surface wiring 16. When the material expands thermally, the sealant 21 flows and stress concentrates on the electrode pad 12. Due to the stress concentration on the electrode pad 12, a crack D 1 is generated in the peripheral insulating film 13 having a linear expansion coefficient different from that of the metal material constituting the back surface wiring 16 by about two digits, and the material of the sealant 21 is plastically deformed. In such a case, disconnection D2 occurs at the bottom of the through-hole 14, resulting in disconnection.

  Therefore, an object of the present invention is to provide a solid-state imaging device in which damage such as disconnection due to stress concentration on an electrode pad is prevented.

A solid-state imaging device according to the present invention includes a semiconductor substrate having an imaging area formed by arranging photosensors on the surface, a wiring layer, a transparent substrate, an electrode pad, an inspection electrode pad, and a backside wiring. . The wiring layer is provided on the surface of the semiconductor substrate, is embedded in a protective film made of an inorganic insulating material, and has a multilayer wiring structure having a plurality of wirings. The transparent substrate is bonded to the surface of the wiring layer via the sealing agent. In addition, the electrode pad is constituted by a part of the wiring provided on the semiconductor substrate side among the plurality of wirings constituting the wiring layer. In addition, the inspection electrode pad is configured by a part of the wiring provided on the transparent substrate side among the plurality of wirings constituting the wiring layer. Further, the back wiring layer reaches from the electrode pad to the back surface of the semiconductor substrate in a state of penetrating the semiconductor substrate.

According to such a solid-state imaging device, since the protective film made of an inorganic insulating material is provided on the surface of the semiconductor substrate, the electrode pad is sandwiched between the sealing agent and the back surface wiring. It is prevented. An inorganic insulating material is generally harder than a sealant formed of an organic insulating material. Thereby, even if the back surface wiring is thermally expanded in the manufacturing process with heat treatment, the stress concentration on the electrode pad is alleviated. Further, peeling of the electrode pad and the back surface wiring due to stress concentration on the electrode pad is prevented, and damage to the solid-state imaging device is prevented. Furthermore, by providing the inspection electrode pad connected to the electrode pad closer to the transparent substrate than the electrode pad, it is possible to prevent a probe mark from being formed.

  As described above, according to the solid-state imaging device of the present invention, damage to the solid-state imaging device due to heat treatment during the manufacturing process can be prevented, so that the reliability and yield of the solid-state imaging device can be improved. .

It is sectional drawing (a) which shows the structure of the solid-state imaging device concerning 1st Embodiment of this invention, and principal part expanded sectional view (b). It is the principal part expanded sectional view (a) and top view (b) which show the structure of the solid-state imaging device concerning 2nd Embodiment of this invention. It is a principal part expanded sectional view which shows the structure of the solid-state imaging device which concerns on 3rd Embodiment of this invention. It is a principal part expanded sectional view which shows the structure of the solid-state imaging device which concerns on the modification 1 of 3rd Embodiment of this invention. It is a principal part expanded sectional view which shows the structure of the solid-state imaging device which concerns on 4th Embodiment of this invention. It is a principal part expanded sectional view which shows the structure of the solid-state imaging device which concerns on the modification 1 of 4th Embodiment of this invention. It is a principal part expanded sectional view which shows the structure of the solid-state imaging device which concerns on 5th Embodiment of this invention. It is a principal part expanded sectional view for demonstrating the conventional solid-state imaging device. It is a principal part expanded sectional view which shows the subject of the conventional solid-state imaging device.

  Hereinafter, embodiments of the present invention will be described in detail.

(First embodiment)
FIG. 1A is a sectional view showing a solid-state imaging device as an embodiment of the present invention, and FIG. 1B is an enlarged sectional view of a region A in FIG. In addition, the same number is attached | subjected and demonstrated to the structure similar to a background art.

  The solid-state imaging device 1 shown in this figure is transparent via a sealing agent 21 to an imaging area S in which photosensors are arranged and an electrode pad 12 drawn from the imaging area S is formed on the surface. The substrate 22 is bonded.

  The imaging area S is provided at the center of the surface of the semiconductor substrate 11 made of, for example, a silicon substrate, and the photosensors arranged and formed may be of a CCD type or a MOS type. An insulating film 13 made of, for example, SiO 2 is provided on the semiconductor substrate 11, and the electrode pad 12 is provided on the insulating film 13 at the periphery of the semiconductor substrate 11. The electrode pad 12 is made of, for example, an Al thin film having a thickness of about several hundred nm. Here, as a constituent material of the electrode pad 12, copper (Cu), gold (Au), and silver (Ag) are used in addition to the Al. Although illustration is omitted here, on the lower layer side of the electrode pad 12, titanium (Ti) / titanium nitride (TiN) or tantalum (Ta) that prevents diffusion of the conductive material from the electrode pad 12 to the insulating film 13 is provided. ) / Barrier layer such as tantalum nitride (TaN).

  The semiconductor substrate 11 and the insulating film 13 are provided with through holes 14 that extend from the electrode pads 12 to the back surface 11 a of the semiconductor substrate 11. The diameter of the through hole 14 is smaller than the diameter of the electrode pad 12, and an insulating film 15 made of, for example, SiO 2 is provided with a film thickness of several μm on the side wall of the through hole 14 and the entire back surface 11 a of the semiconductor substrate 11. Further, in the through hole 14 provided with the insulating film 15, a barrier layer (not shown) made of, for example, Ti / TiN having a Cu diffusion preventing property on the insulating film 15 so as to cover the inner wall of the through hole 14. A back surface wiring 16 made of a Cu film having a thickness of several tens of μm is provided.

  A back surface protective resin 17 is provided on the back surface wiring 16 and the insulating film 15 in a state where the through hole 14 is embedded. The back surface protective resin 17 is provided with an opening 17a that reaches the back surface wiring 16, and bumps 18 that serve as external connection terminals are provided on the surface of the back surface wiring 16 exposed from the opening 17a. Yes.

  Here, the example in which the back surface wiring 16 is provided in a state of covering the inner wall of the through hole 14 has been described. However, the shape of the back surface wiring 16 is not particularly limited, and the through hole 14 is embedded. It may be provided.

  Here, as a characteristic configuration of the present invention, a protective film 31 made of an inorganic insulating material is provided between the semiconductor substrate 11 and the sealant 21 so as to cover at least the electrode pad 12. . Thereby, the electrode pad 12 is prevented from being sandwiched between the sealing agent 21 and the back surface wiring 16. Further, since the protective film 31 made of an inorganic insulating material is generally harder than the sealant 21 formed of an organic insulating material, for example, the back surface wiring 16 or the back surface protective resin 17 is formed. By the heat treatment, stress concentration on the electrode pad 12 due to thermal expansion of the back surface wiring 16 is reduced.

  Here, as the inorganic insulating material constituting the protective film 31, an optically transparent insulating material is preferably used, and SiO2 or silicon nitride (SiN) is used. It may be. Here, for example, a SiN film is used as the protective film 31.

  Here, an example in which the protective film 31 is provided over the entire area of the insulating film 13 so as to cover the electrode pad 12 has been described. However, the protective film 31 only needs to be provided so as to cover at least the electrode pad 12. The pattern may be formed.

  On the other hand, the sealing agent 21 is provided so as to cover at least the protective film 31 on the periphery of the semiconductor substrate 11. Here, it is assumed that the sealing agent 21 is provided so as to cover the entire region on the protective film 31, for example. In this case, for example, an optically transparent organic insulating material having adhesiveness is used as the sealing agent 21 and is formed on the protective film 31 with a film thickness of several tens of μm. As the sealant 21, a thermosetting resin or an ultraviolet curable resin can be used. Here, for example, an epoxy-based thermosetting resin is used.

  Further, a transparent substrate 22 made of, for example, a glass substrate is bonded to the semiconductor substrate 11 provided with the protective film 31 through the sealant 21. Here, as the transparent substrate 22, in addition to a general lens glass material, quartz, crystal, or the like can be used. Further, the transparent substrate 22 and the semiconductor substrate 11 are configured to have the same shape in plan view.

  The solid-state imaging device 1 having such a configuration is manufactured by the method described below.

  First, the protective film 31 made of SiN is formed on the surface of the insulating film 13 of the semiconductor wafer in which a plurality of the semiconductor substrate 11 portions of the solid-state imaging device 1 are arranged, covering at least the electrode pads 12. Next, a transparent substrate having the same size as that of the semiconductor wafer is bonded with the sealing agent 21. In this bonding, for example, the sealing agent 21 is applied to a semiconductor wafer or a transparent substrate by spin coating, and the semiconductor wafer and the transparent substrate are bonded to each other. Subsequently, the sealing agent 21 is cured by heating or irradiation with ultraviolet light. In addition, when a photosensitive thing is used as the sealing agent 21, the sealing agent 21 is hardened by heating.

  Next, the back surface of the semiconductor wafer to which the transparent substrate 22 is bonded is ground to reduce the thickness of the semiconductor substrate 11 to, for example, 100 μm or less. Subsequently, a through hole 14 extending from the back surface of the semiconductor wafer to the lower surface of the electrode pad 12 is formed. For this, a processing technique such as laser processing, photolithography, or reactive ion etching (RIE) can be used.

  Thereafter, an insulating film 15 made of SiO2 or the like is formed on the entire back surface of the semiconductor wafer in a state of covering the side walls of the through holes 14. The insulating film 15 can be formed using, for example, an epoxy-based dry film.

  Next, after a barrier film (not shown) made of Ti / TiN and a seed layer (not shown) made of Cu are formed by sputtering, for example, while covering the inner wall of the through hole 14 provided with the insulating film 15 Then, a Cu film is formed on the seed layer by electrolytic plating, and the back surface wiring 16 is formed by patterning them.

  Subsequently, the semiconductor wafer is cut together with the transparent substrate for each semiconductor substrate 11 to obtain individual solid-state imaging devices 1. At this time, it is preferable to form a V-shaped groove on the surface of the transparent substrate prior to cutting, and to cut the semiconductor wafer and the transparent substrate along the groove.

  Then, after the back surface protective resin 17 is formed by sticking a laminate film on the insulating film 15 in a state in which the through-hole 14 with the back surface wiring 16 is provided, the back surface protective resin 17 is formed on the back surface protective resin 17. An opening 17a reaching the wiring 16 is formed, and a bump 18 made of tin (Sn) -Ag-Cu is formed on the back surface wiring 16 exposed from the opening 17a. The back surface protective resin 17 can be formed by vacuum coating or spray coating, in addition to the laminate film. As described above, the solid-state imaging device 1 is completed.

  According to such a solid-state imaging device 1, the protective film 31 made of an inorganic insulating material is disposed between the electrode pad 12 and the sealing agent 21. Therefore, in the manufacturing process with heat treatment, the back surface wiring 16 The stress concentration on the electrode pad 12 due to the thermal expansion is relaxed. Thereby, peeling of the electrode pad 12 and the back surface wiring 16 due to stress concentration on the electrode pad 12 is prevented, and damage to the solid-state imaging device 1 is prevented. Therefore, the reliability and yield of the solid-state imaging device 1 can be improved.

  In the above embodiment, an example in which the sealing agent 21 made of an optically transparent organic insulating material is provided on the entire area of the protective film 31 covering the entire area of the semiconductor substrate 11 has been described. 21 may be provided in a state of surrounding the imaging area S on the formation area of the electrode pad 12, that is, on the area excluding the imaging area S. As a forming method, for example, a photosensitive resin is used as the sealing agent 21. After the sealing agent 21 is applied on the protective film 31 by, for example, a spin coating method, exposure and development are performed, thereby removing the imaging area S. A sealant 21 is patterned on the top. In this case, since the sealing agent 21 is not formed on the imaging area S, an opaque organic insulating material may be used as the sealing agent 21. Thereafter, the transparent substrate is bonded via the sealant 21 as in the above embodiment. Further, the sealing agent 21 may be formed in a region of the transparent substrate facing the region excluding the imaging area S.

(Second Embodiment)
Next, a second embodiment according to the solid-state imaging device of the present invention will be described with reference to an enlarged cross-sectional view of a main part of FIG. 2A and a plan view of FIG. 2A is a cross-sectional view taken along the line XX ′ of FIG. 2B, and FIG. 2B is a top view before the sealing agent 21 is formed. In the second embodiment, the configuration on the back surface 11a side of the semiconductor substrate 11 including the back surface wiring 16 provided in the through hole 14 described with reference to FIG. 1 is the same as that in the first embodiment. .

  As shown in FIG. 2A, a protective film 32 made of an inorganic insulating material is provided on the insulating film 13 so as to cover the electrode pad 12 as in the first embodiment. As a characteristic configuration of this embodiment, as shown in FIG. 2B, the electrode pad 12 is divided into a connection region 12a to the back surface wiring 16 and an inspection region 12b, and the protection The film 32 is provided with an opening 32a so as to reach the inspection region 12b. Thus, before applying the sealant 21 (see FIG. 2A), the probe is applied to the inspection region 12b of the electrode pad 12 exposed by the opening 32a, so that the optical sensor is good. Check for defects. Then, as shown in FIG. 2A again, after the inspection is completed, the transparent substrate 22 is bonded via the sealant 21, so that the opening 32 a is embedded with the sealant 21.

  Further, by dividing the connection region 12a and the inspection region 12b, it is possible to prevent a probe mark caused by applying the inspection probe from penetrating to the insulating film 13 side where the through hole 14 is formed. For this reason, damage (hole) occurs in the sealant 21 due to process gas or plasma attack when the through hole 14 is processed, and backside wiring is caused by the adsorbed material such as moisture and chemicals in the damaged portion being released during the process. It is possible to prevent the formation defects 16 and the corrosion of the electrode pads 12 from being induced.

  According to such a solid-state imaging device 2, since the protective film 32 made of an inorganic insulating material is disposed between the electrode pad 12 and the sealant 21, the same effects as those of the first embodiment can be obtained. be able to.

  Further, according to the solid-state imaging device 2 of the present embodiment, the inspection region 12b of the electrode pad 12 exposed by the opening 32a does not overlap with the connection region 12a with the back surface wiring 16, thereby preventing problems due to probe marks. can do.

(Third embodiment)
Next, a third embodiment according to the solid-state imaging device of the present invention will be described with reference to an enlarged cross-sectional view of the main part of FIG. In the solid-state imaging device 3 shown in this figure, the configuration on the back surface side of the semiconductor substrate 11 including the back surface wiring 16 provided in the through hole 14 is the same as that described with reference to FIG. 1 in the first embodiment. The configuration is as follows.

  As shown in FIG. 3, the protective film 33 in the present embodiment covers the electrode pad 12 and the first protective layer 33 ′ provided on the insulating film 13 and the first protective layer 33 ′ provided on the first protective layer 33 ′. The first protective layer 33 ′ and the second protective layer 33 ″ are made of an inorganic insulating material as in the first embodiment.

  In the first protective layer 33 ′, vias 41 made of, for example, Cu are provided in the via holes in a state of being connected to the electrode pads 12 through a barrier layer. On the first protective layer 33 ′, an inspection electrode pad 42 made of, for example, Al is provided via a barrier layer while being connected to the via 41. Here, it is assumed that the inspection electrode pad 42 is disposed so as to overlap the electrode pad 12 and the back surface wiring 16 in plan view, for example.

  The second protective layer 33 ″ is provided with an opening 33a ″ that reaches a region excluding the connection region with the via 41 in the inspection electrode pad 42, and the inspection is exposed from the opening 33a ″. The probe formed on the surface of the electrode pad 42 is used to inspect the element formed on the semiconductor substrate 11. After the inspection is completed, the transparent substrate 22 is bonded via the sealant 21 so that the opening is formed. The inside of 33a ″ is filled with the sealant 21.

  Here, the opening 33 a ″ is preferably provided in a region excluding the connection region with the via 41 in the electrode pad 42. Thereby, the inspection electrode pad 42 is in contact with the via 41 and the sealing agent 21. Therefore, the stress is not concentrated on the inspection electrode pad 42.

  According to such a solid-state imaging device 3, since the protective film 33 made of an inorganic insulating material is disposed between the electrode pad 12 and the sealant 21, the same effect as that of the first embodiment is achieved. be able to.

  Further, according to the solid-state imaging device 3 of the present embodiment, the inspection electrode pad 42 connected to the electrode pad 12 is provided on the surface of the protective film 33, so that the electrode pad 12 connected to the back surface wiring 16 is provided. It is possible to prevent formation of probe marks due to inspection.

(Modification 1)
In the solid-state imaging device 3 of the third embodiment, the example in which the connection region between the electrode pad 12 and the back surface wiring 16 and the inspection electrode pad 42 are provided so as to overlap in plan view has been described. The position of the electrode pad 42 is not particularly limited.

  As shown in FIG. 4, for example, the inspection electrode pad 42 is disposed at a position shifted in plan view from the connection region of the electrode pad 12 with the back surface wiring 16 in a state where the electrode pad 42 is connected to the electrode pad 12 by the via 41. It may be.

  Even the solid-state imaging device 3 ′ having such a configuration can achieve the same effects as the solid-state imaging device 3 of the third embodiment.

(Fourth embodiment)
Next, a fourth embodiment according to the solid-state imaging device of the present invention will be described with reference to an enlarged cross-sectional view of the main part of FIG.

  In the solid-state imaging device 4 shown in this figure, in the first embodiment, a part of the multilayer wiring structure in the insulating film 13 drawn from the imaging area S described with reference to FIG. It is used as a pad 42 '. Here, in the wiring layer constituting the multilayer wiring structure, the uppermost wiring layer including the inspection electrode pad 42 ′ is made of Al, and the wiring layer including the other electrode pad 12 ′ is made of Cu. And In this embodiment, the insulating film 13 (see FIG. 1) functions as the protective film 34, and the electrode pad 12 ′ and the inspection electrode pad 42 ′ are provided inside the protective film 34. .

  In this case, the through hole 14 ′ is provided in a state of reaching the electrode pad 12 ′ provided in the protective film 34, and the back surface wiring is formed in the through hole 14 ′ as in the first embodiment. 16 is provided.

  Further, the protective film 34 is provided with an opening 34a that reaches the inspection electrode pad 42 ', and an inspection is performed by applying a probe to the surface of the inspection electrode pad 42' exposed from the opening 34a. Done. After the inspection, the transparent substrate 22 (see FIG. 1) is bonded via the sealant 21 (see FIG. 1), so that the opening 34a is filled with the sealant 21. It becomes a state.

  Here, the opening 34a is preferably provided in a region excluding a connection region with the via 41 'in the inspection electrode pad 42'. As a result, the inspection electrode pad 42 ′ is prevented from being pinched while being in contact with the via 41 ′ and the sealing agent 21, and stress concentration on the inspection electrode pad 42 ′ is prevented.

  According to such a solid-state imaging device 4, the protective film 34 made of an inorganic insulating material is disposed between the electrode pad 12 ′ and the sealant 21. Therefore, the same effect as that of the first embodiment can be obtained. Can play.

  Further, according to the solid-state imaging device 4 of the present embodiment, the inspection electrode pad 42 ′ connected to the electrode pad 12 ′ is provided on the transparent substrate 22 side with respect to the electrode pad 12 ′. It is possible to prevent a probe mark from being formed on the electrode pad 12 ′ to be connected.

(Modification 2)
In the solid-state imaging device 4 of the fourth embodiment, the example in which the connection region between the electrode pad 12 ′ and the back surface wiring 16 and the inspection electrode pad 42 ′ are overlapped in plan view has been described. The position of the inspection electrode pad 42 'is not particularly limited.

  As shown in FIG. 6, for example, the inspection electrode pad 42 ′ is displaced in plan view from the connection region of the electrode pad 12 ′ with the back surface wiring 16 in a state where the electrode pad 12 ′ is connected to the electrode pad 12 ′ by the via 41 ′. It may be arranged at a position.

  Even the solid-state imaging device 4 ′ having such a configuration can achieve the same effects as the solid-state imaging device 4 of the fourth embodiment.

(Fifth embodiment)
Next, a fifth embodiment according to the solid-state imaging device of the present invention will be described with reference to an enlarged cross-sectional view of the main part of FIG. In the solid-state imaging device 5 shown in this figure, the configuration on the back surface side of the semiconductor substrate 11 including the back surface wiring 16 provided in the through hole 14 is the same as that described with reference to FIG. 1 in the first embodiment. And

  As shown in FIG. 7, in the solid-state imaging device 5 in the present embodiment, the protective film 31 described with reference to FIG. 1 is not provided in the first embodiment, and the film thickness of the electrode pad 12 is the back surface wiring 16. Is formed thicker than the film thickness of the wiring material constituting the film. Specifically, the electrode pad 12 is formed to have a thickness of several μm to several tens of μm. As a result, even if the electrode pad 12 is sandwiched between the sealing agent 21 and the back surface wiring 16, stress concentration on the electrode pad 12 due to thermal expansion of the back surface wiring 16 in the manufacturing process involving heat treatment. The impact of is mitigated.

  According to such a solid-state imaging device 5, the electrode pad 12 is provided with a film thickness larger than the film thickness of the wiring material constituting the back surface wiring 16. Even if the stress is concentrated on the pad 12, problems caused by the stress are prevented. Therefore, damage to the solid-state imaging device 5 can be prevented, and the reliability and yield of the solid-state imaging device 5 can be improved.

  DESCRIPTION OF SYMBOLS 1-5 ... Solid-state imaging device, 11 ... Semiconductor substrate, 12, 12 '... Electrode pad, 16 ... Back surface wiring, 21 ... Sealant, 22 ... Transparent substrate, 31-34 ... Protective film, S ... Imaging area

Claims (2)

A semiconductor substrate with an imaging area formed by arranging photosensors on its surface;
A wiring layer of a multilayer wiring structure provided on the surface of the semiconductor substrate and having a plurality of wirings embedded in a protective film made of an inorganic insulating material;
A transparent substrate bonded to the surface of the wiring layer via a sealant;
Among a plurality of layers of wiring constituting the wiring layer, an electrode pad configured by a part of the wiring provided on the semiconductor substrate side;
Among the multiple layers of wiring constituting the wiring layer, an inspection electrode pad configured by a part of the wiring provided on the transparent substrate side;
A solid-state imaging device comprising: a back surface wiring extending from the electrode pad to the back surface of the semiconductor substrate in a state of penetrating the semiconductor substrate. The solid-state imaging device according to claim 1, wherein the inspection electrode pad is arranged in a state of being connected to the electrode pad by a via and overlapping with a connection region of the electrode pad with a backside wiring in plan view.

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