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JP5122192B2 - Semiconductor device mounting equipment - Google Patents

Semiconductor device mounting equipment Download PDF

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Publication number
JP5122192B2
JP5122192B2 JP2007176209A JP2007176209A JP5122192B2 JP 5122192 B2 JP5122192 B2 JP 5122192B2 JP 2007176209 A JP2007176209 A JP 2007176209A JP 2007176209 A JP2007176209 A JP 2007176209A JP 5122192 B2 JP5122192 B2 JP 5122192B2
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Japan
Prior art keywords
semiconductor element
elastomer
heating
pressing
mounting apparatus
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2007176209A
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Japanese (ja)
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JP2009016544A5 (en
JP2009016544A (en
Inventor
一博 登
善広 戸村
雄一郎 山田
鉄平 岩瀬
謙太郎 熊澤
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Corp
Panasonic Holdings Corp
Original Assignee
Panasonic Corp
Matsushita Electric Industrial Co Ltd
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Priority to JP2007176209A priority Critical patent/JP5122192B2/en
Publication of JP2009016544A publication Critical patent/JP2009016544A/en
Publication of JP2009016544A5 publication Critical patent/JP2009016544A5/ja
Application granted granted Critical
Publication of JP5122192B2 publication Critical patent/JP5122192B2/en
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B30—PRESSES
    • B30B—PRESSES IN GENERAL
    • B30B5/00—Presses characterised by the use of pressing means other than those mentioned in the preceding groups
    • B30B5/02—Presses characterised by the use of pressing means other than those mentioned in the preceding groups wherein the pressing means is in the form of a flexible element, e.g. diaphragm, urged by fluid pressure
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B30—PRESSES
    • B30B—PRESSES IN GENERAL
    • B30B15/00—Details of, or accessories for, presses; Auxiliary measures in connection with pressing
    • B30B15/06—Platens or press rams
    • B30B15/065—Press rams
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    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/31—Structure, shape, material or disposition of the layer connectors after the connecting process
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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Fluid Mechanics (AREA)
  • Wire Bonding (AREA)

Description

本発明は、基板上に熱硬化性樹脂材料を介して配置された半導体素子を、加熱加圧ツールにて押圧して基板に実装する半導体素子実装装置及び実装方法に関する。   The present invention relates to a semiconductor element mounting apparatus and a mounting method for mounting a semiconductor element placed on a substrate via a thermosetting resin material by pressing it with a heating and pressing tool.

近年、携帯電話やデジタルカメラなどの小型軽量化を求められている製品において、電気回路基板の薄型化や、実装構造における小型化へのニーズが高まっている。   In recent years, in products that are required to be smaller and lighter, such as mobile phones and digital cameras, there is an increasing need for thinner electric circuit boards and smaller mounting structures.

このような動向のなか、半導体実装技術も、基板の上にパッケージ化された半導体素子を半田付けする表面実装技術から、パッケージ化しない半導体素子を回路基板に直接に実装するベアチップ実装技術へと進化し、特に、このようなベアチップ実装技術において、半導体素子のアクティブ面をフェイスダウンで回路基板面に実装するフリップチップ実装技術へと進化している。   Under these trends, semiconductor mounting technology has also evolved from surface mounting technology that solders semiconductor elements packaged on a substrate to bare chip mounting technology that directly mounts non-packaged semiconductor devices on a circuit board. However, in particular, in such a bare chip mounting technology, it has evolved into a flip chip mounting technology in which the active surface of a semiconductor element is mounted face-down on a circuit board surface.

このような従来のフリップチップ実装技術において、実装信頼性を向上させるために、加圧ツールの一部に弾性体を用いた構成が採用されている（例えば、特許文献１参照）。このような従来のフリップチップ実装技術における実装方法を図１８の模式説明図を用いて説明する。   In such a conventional flip chip mounting technique, in order to improve mounting reliability, a configuration using an elastic body as a part of the pressing tool is employed (for example, see Patent Document 1). A mounting method in such a conventional flip chip mounting technique will be described with reference to a schematic explanatory diagram of FIG.

図１８は、回路基板１０２の上面に接合材料（熱硬化性樹脂材料）の一例である樹脂シート１０３を介して配置（仮止め）された半導体素子１０１を、加圧ツール１１０にて加圧しながら実装を行う状態を示す図である。図１８に示すように、回路基板１０２は、ステージ１１５により保持され、ステージ１１５には、樹脂シート１０３を熱硬化させるための加熱を行う加熱ヒータ１１６が内蔵されている。また、加圧ツール１１０は、その下面である加圧面に凹部１１１が形成されたツール本体部１１２と、この凹部１１１内に配置されたゴム材料により形成された弾性体１１３とを備えている。また、半導体素子１０１の図示下面であるアクティブ面には、複数のアルミ電極（素子電極）１０４が形成されており、各々のアルミ電極１０４には、バンプ（突起電極）１０５が形成されている。また、回路基板１０２における半導体素子１０１の実装位置には、アルミ電極１１４及びバンプ１１５に対応するように基板電極１０６が形成されている。   FIG. 18 shows a state in which a semiconductor element 101 placed (temporarily fixed) on an upper surface of a circuit board 102 via a resin sheet 103 which is an example of a bonding material (thermosetting resin material) is pressed with a pressing tool 110. It is a figure which shows the state which performs mounting. As shown in FIG. 18, the circuit board 102 is held by a stage 115, and the stage 115 has a built-in heater 116 that performs heating for thermosetting the resin sheet 103. The pressing tool 110 includes a tool main body 112 having a recess 111 formed on the pressing surface, which is the lower surface thereof, and an elastic body 113 formed of a rubber material disposed in the recess 111. A plurality of aluminum electrodes (element electrodes) 104 are formed on the active surface, which is the lower surface of the semiconductor element 101, and bumps (projection electrodes) 105 are formed on each of the aluminum electrodes 104. A substrate electrode 106 is formed at the mounting position of the semiconductor element 101 on the circuit board 102 so as to correspond to the aluminum electrode 114 and the bump 115.

このような構成を有する従来の実装装置において、まず、ステージ１１５の上面に回路基板１０２を配置して保持する。回路基板１０２におけるそれぞれの実装位置には、予め樹脂シート１０３を介して半導体素子１０１が配置（仮止め）されている。次に、回路基板１０２上に配置された１個の半導体素子１０１と、加圧ツール１１０との位置合わせを行う。その後、加圧ツール１１０を下降させて、弾性体１１３を介して半導体素子１０１及び樹脂シート１０３を押圧して、半導体素子１０１のそれぞれのアルミ電極１０４を、バンプ１０５を介してそれぞれの基板電極１０６に接続するとともに、この接続箇所の周囲が樹脂シート１０３により覆われた状態とする。それとともに、ステージ１１５の加熱ヒータ１１６により回路基板１０２を加熱することで、樹脂シート１０３を加熱して熱硬化させる。その結果、半導体素子１０１と回路基板１０２とが電気的に接続されるとともに、この状態において、接続部分を樹脂シート１０３にて封止し、かつ、半導体素子１０１と回路基板１０２とを接着して、回路基板１０２に半導体素子１０１が実装される。このように弾性体１１３を用いて加圧することにより、加圧された樹脂シート１０３が半導体素子１０１の周囲に拡がって形成されるフィレット部に対しても、弾性体１１３の変形により加圧することができ、十分な加圧力を付加して、実装信頼性を向上させることができる。   In the conventional mounting apparatus having such a configuration, first, the circuit board 102 is arranged and held on the upper surface of the stage 115. At each mounting position on the circuit board 102, the semiconductor element 101 is disposed (temporarily fixed) via a resin sheet 103 in advance. Next, the positioning of one semiconductor element 101 disposed on the circuit board 102 and the pressing tool 110 is performed. Thereafter, the pressing tool 110 is lowered to press the semiconductor element 101 and the resin sheet 103 through the elastic body 113, and the respective aluminum electrodes 104 of the semiconductor element 101 are connected to the respective substrate electrodes 106 through the bumps 105. And the periphery of this connection portion is covered with the resin sheet 103. At the same time, the circuit board 102 is heated by the heater 116 of the stage 115, whereby the resin sheet 103 is heated and cured. As a result, the semiconductor element 101 and the circuit board 102 are electrically connected. In this state, the connection portion is sealed with the resin sheet 103 and the semiconductor element 101 and the circuit board 102 are bonded. The semiconductor element 101 is mounted on the circuit board 102. By applying pressure using the elastic body 113 in this manner, the fillet portion formed by spreading the pressurized resin sheet 103 around the semiconductor element 101 can be pressed by deformation of the elastic body 113. It is possible to improve the mounting reliability by applying a sufficient pressing force.

特開２００５−３２９５２号公報JP 2005-32952 A

しかしながら、従来の実装方法では、樹脂シート１０３にフィレット部に、適切な加圧力を付加するために弾性体１１３を介して加圧する加圧ツール１１０の構造が採用されていることにより、半導体チップ１０１の実装姿勢における平行度が保てない場合が生じるという問題がある。例えば、回路基板１０２に樹脂シート１０３を介して仮止めされた状態において、半導体素子１０１と回路基板１０２との間の平行度が維持されていないような場合にあっては、その後、加圧ツール１１０により半導体素子１０１を加圧する際に、軟らかい弾性体１１３により半導体素子１０１を加圧することになるため、傾いて仮止めされた半導体素子１０１に対して、横方向に力が加わり、半導体素子１０１の実装位置に位置ズレが生じる場合がある。このような場合にあっては、実装信頼性も低下することになる。   However, the conventional mounting method employs the structure of the pressurizing tool 110 that pressurizes the resin sheet 103 via the elastic body 113 in order to apply an appropriate pressurizing force to the fillet portion. There is a problem in that the parallelism in the mounting posture cannot be maintained. For example, when the parallelism between the semiconductor element 101 and the circuit board 102 is not maintained in a state where the circuit board 102 is temporarily fixed via the resin sheet 103, the pressing tool is thereafter used. When the semiconductor element 101 is pressed by 110, the semiconductor element 101 is pressed by the soft elastic body 113. Therefore, a force is applied in the lateral direction to the semiconductor element 101 that is temporarily fixed, and the semiconductor element 101 is pressed. There may be a displacement in the mounting position. In such a case, the mounting reliability also decreases.

従って、本発明の目的は、上記問題を解決することにあって、基板上に熱硬化性樹脂材料を介して配置された半導体素子を、加熱加圧ツールにて押圧して基板に実装する半導体素子の実装において、半導体素子と基板との間の平行度を確実に保ちながら、実装信頼性を向上させることができる半導体素子の実装装置および実装方法を提供することにある。   Accordingly, an object of the present invention is to solve the above-described problem, and a semiconductor device which is mounted on a substrate by pressing a semiconductor element disposed on the substrate via a thermosetting resin material with a heating and pressing tool. An object of the present invention is to provide a semiconductor device mounting apparatus and a mounting method capable of improving mounting reliability while reliably maintaining parallelism between a semiconductor device and a substrate.

上記目的を達成するために、本発明は以下のように構成する。   In order to achieve the above object, the present invention is configured as follows.

本発明の第１態様によれば、基板上に熱硬化性樹脂材料を介して配置された半導体素子を、加熱加圧ツールにて押圧して実装する半導体素子実装装置において、
シート部材を水平に張架して保持するシート保持部と、
上記張架された状態の上記シート部材で、上記半導体素子の上面を加圧するように、上記シート保持部を下降させる保持部昇降装置と、
その加圧面に配置されたエラストマーと、上記エラストマーを加熱する加熱部とを備える加熱加圧ツールと、
上記シート部材を介して上記エラストマーにて上記半導体素子の上面を加圧するとともに、上記エラストマーを介して上記半導体素子及び上記樹脂材料を加熱するように、上記加熱加圧ツールを下降させるツール昇降装置とを備え、
上記加熱加圧ツールは、上記エラストマーがその内側に配置される凹部を、上記加圧面に有する剛体部を備え、
上記エラストマーは、上記剛体部の上記凹部の中央に配置される第１のエラストマーと、上記凹部において上記第１のエラストマーの周囲に配置される第２のエラストマーとを備え、上記第１のエラストマーは上記第２のエラストマーよりも高い硬度を有する、半導体素子実装装置を提供する。
本発明の第２態様によれば、上記半導体素子は、突起電極数が１００〜１０００である、第１態様に記載の半導体素子実装装置を提供する。
本発明の第３態様によれば、上記シート部材が樹脂シートである、第１態様または第２態様に記載の半導体素子実装装置を提供する。
本発明の第４態様によれば、上記シート部材を介して、上記エラストマーにて、上記半導体素子の上面および側面ならびに上記樹脂材料を押圧する、第１態様から第３態様のいずれか１つに記載の半導体素子実装装置を提供する。
本発明の第５態様によれば、上記シート部材の弾性率は、上記エラストマーの弾性率より低い、第１態様から第４態様のいずれか１つに記載の半導体素子実装装置を提供する。
According to the first aspect of the present invention, in a semiconductor element mounting apparatus for mounting a semiconductor element disposed on a substrate via a thermosetting resin material by pressing with a heating and pressing tool,
A sheet holding unit for holding the sheet member horizontally stretched;
A holding unit lifting device for lowering the sheet holding unit so as to pressurize the upper surface of the semiconductor element with the sheet member in the stretched state;
A heating and pressing tool comprising an elastomer disposed on the pressing surface and a heating unit for heating the elastomer;
A tool lifting and lowering device that pressurizes the upper surface of the semiconductor element with the elastomer through the sheet member and lowers the heating and pressing tool so as to heat the semiconductor element and the resin material through the elastomer; equipped with a,
The heating and pressurizing tool includes a rigid body portion having a concave portion in which the elastomer is disposed on the inner side thereof on the pressing surface,
The elastomer includes a first elastomer disposed in the center of the concave portion of the rigid body portion, and a second elastomer disposed around the first elastomer in the concave portion, wherein the first elastomer is Provided is a semiconductor device mounting apparatus having a hardness higher than that of the second elastomer .
According to a second aspect of the present invention, there is provided the semiconductor element mounting apparatus according to the first aspect, wherein the number of protruding electrodes is 100 to 1000.
According to a third aspect of the present invention, there is provided the semiconductor element mounting apparatus according to the first aspect or the second aspect , wherein the sheet member is a resin sheet.
According to the fourth aspect of the present invention, in any one of the first to third aspects, the upper surface and the side surface of the semiconductor element and the resin material are pressed with the elastomer through the sheet member. The semiconductor element mounting apparatus described is provided.
According to a fifth aspect of the present invention, there is provided the semiconductor element mounting apparatus according to any one of the first to fourth aspects, wherein the elastic modulus of the sheet member is lower than the elastic modulus of the elastomer.

本発明の第６態様によれば、上記第１のエラストマーは、上記第２のエラストマーよりも高い熱伝導性を有する、第１態様から第５態様のいずれか１つに記載の半導体素子実装装置を提供する。
According to a sixth aspect of the present invention, in the semiconductor element mounting apparatus according to any one of the first to fifth aspects , the first elastomer has higher thermal conductivity than the second elastomer. I will provide a.

本発明の第７態様によれば、上記加熱加圧ツールによる上記半導体素子の加熱加圧状態において、上記第１のエラストマーが上記半導体素子に上面を、上記シート部材を介して加圧するように配置され、上記第２のエラストマーが、上記半導体素子の周囲へ拡がるように配置される上記樹脂材料を、上記シート部材を介して加圧するように配置される、第１態様から第６態様のいずれか１つに記載の半導体素子実装装置を提供する。
According to the seventh aspect of the present invention, the first elastomer is arranged so that the upper surface of the semiconductor element is pressed onto the semiconductor element through the sheet member in the heating and pressing state of the semiconductor element by the heating and pressing tool. Any one of the first to sixth aspects, wherein the second elastomer is arranged to pressurize the resin material arranged so as to spread around the semiconductor element through the sheet member . A semiconductor element mounting apparatus as described in one is provided.

本発明の第８態様によれば、上記剛体部における上記凹部の縁部が、上記加熱加圧ツールの加圧高さ位置を上記基板表面との当接により規制する加圧位置規制部である、第１態様から第７態様のいずれか１つに記載の半導体素子実装装置を提供する。
According to the eighth aspect of the present invention, the edge portion of the concave portion in the rigid body portion is a pressurizing position restricting portion that restricts the pressurizing height position of the heating and pressurizing tool by contact with the substrate surface. A semiconductor element mounting apparatus according to any one of the first to seventh aspects is provided.

本発明によれば、熱硬化性樹脂材料を介して基板上に配置された半導体素子を、まず、水平に張架されたシート部材を介して加圧することにより、基板に対する半導体素子の平行度を矯正した後、エラストマーを介して加熱加圧ヘッドにより加圧して、半導体素子の上面だけでなく、その周囲に拡がる熱硬化性樹脂をも加圧することができる。従って、基板に対する半導体素子の平行度を保って、実装位置の精度を確保することができるとともに、熱硬化性樹脂に対しても適切な荷重を付加して確実な封止及び接着を行うことができる。よって、半導体素子の実装において、実装の信頼性を向上させることができる。   According to the present invention, a semiconductor element placed on a substrate via a thermosetting resin material is first pressed through a sheet member that is horizontally stretched, whereby the parallelism of the semiconductor element with respect to the substrate is increased. After the correction, it is possible to pressurize not only the upper surface of the semiconductor element but also the thermosetting resin spreading around the upper surface of the semiconductor element by pressing with a heating and pressing head through the elastomer. Accordingly, the parallelism of the semiconductor element with respect to the substrate can be maintained to ensure the accuracy of the mounting position, and an appropriate load can be applied to the thermosetting resin to perform reliable sealing and adhesion. it can. Therefore, the mounting reliability can be improved in the mounting of the semiconductor element.

以下に、本発明にかかる実施の形態を図面に基づいて詳細に説明する。   Embodiments according to the present invention will be described below in detail with reference to the drawings.

本発明の一の実施形態にかかる半導体素子の実装装置９の構成を示す模式断面図を図１Ａ及び図１Ｂに示す。なお、図１Ａは、図１Ｂの実装装置９におけるＡ−Ａ’線の断面図である。また、本実施形態の半導体素子の実装装置９は、回路基板２に仮止め（配置）された状態の半導体素子１を回路基板２との間で電気的に導通させるとともに、機械的に固定するために、半導体素子１を加熱及び加圧する装置である。   1A and 1B are schematic cross-sectional views showing the configuration of a semiconductor element mounting apparatus 9 according to an embodiment of the present invention. 1A is a cross-sectional view taken along line A-A ′ of the mounting apparatus 9 in FIG. 1B. In addition, the semiconductor element mounting apparatus 9 of the present embodiment electrically connects the semiconductor element 1 temporarily fixed (arranged) to the circuit board 2 with the circuit board 2 and mechanically fixes the semiconductor element 1. Therefore, it is a device for heating and pressurizing the semiconductor element 1.

図１Ａ及び図１Ｂに示すように、実装装置９は、回路基板２をその下面側から支持するとともに、その支持位置を解除可能に保持するステージ１５と、ステージ１５に保持された状態の回路基板２上に仮止めされた半導体素子１に対して、実装のための加熱および加圧を行う加熱加圧ツール１０と、加熱加圧ツール１０による半導体素子１の加圧の前に、仮止め状態の半導体素子１の回路基板２に対する平行度を矯正する平行度矯正装置２０とを備えている。   As shown in FIG. 1A and FIG. 1B, the mounting apparatus 9 supports the circuit board 2 from the lower surface side and holds the support position so that the support position can be released, and the circuit board held by the stage 15. 2, a heating and pressing tool 10 for performing heating and pressurization for mounting on the semiconductor element 1 temporarily fixed on the semiconductor element 1, and a temporary fixing state before the semiconductor element 1 is pressed by the heating and pressing tool 10. And a parallelism correction device 20 that corrects the parallelism of the semiconductor element 1 to the circuit board 2.

まず、ステージ１５は、剛体材料にて構成され、その上面である回路基板２の保持面が平坦に形成されている。また、この保持面には、配置された回路基板２を真空吸引することで吸着保持する複数の吸着孔１６が形成されている。回路基板２における上面には、半導体素子１の複数の実装位置が配置されており、各々の実装位置には、複数の基板電極６が形成されている。また、半導体素子１の下面であるアクティブ面には、複数のアルミ電極４が形成されており、各々のアルミ電極４にはバンプ５が形成されている。なお、それぞれの基板電極６は、アルミ電極４との配置と対応するように形成されている。また、図１Ａに示す状態においては、回路基板２のそれぞれの実装位置に、半導体素子１が熱硬化性樹脂材料である樹脂シート（例えば、異方性導電性樹脂フィルムあるいは絶縁性樹脂フィルム）３を介して配置された状態、すなわち仮止めされた状態にて配置されている。なお、本実施形態において、「仮止め状態」とは、半導体素子１の配置位置が完全に固定されておらず、外力を付加することで、その配置位置が容易に変化するような状態のことである。   First, the stage 15 is comprised with a rigid material, and the holding surface of the circuit board 2 which is the upper surface is formed flat. The holding surface is formed with a plurality of suction holes 16 for sucking and holding the arranged circuit board 2 by vacuum suction. A plurality of mounting positions of the semiconductor element 1 are arranged on the upper surface of the circuit board 2, and a plurality of substrate electrodes 6 are formed at each mounting position. A plurality of aluminum electrodes 4 are formed on the active surface, which is the lower surface of the semiconductor element 1, and bumps 5 are formed on each aluminum electrode 4. Each substrate electrode 6 is formed so as to correspond to the arrangement with the aluminum electrode 4. Further, in the state shown in FIG. 1A, a resin sheet (for example, an anisotropic conductive resin film or an insulating resin film) 3 in which the semiconductor element 1 is a thermosetting resin material at each mounting position of the circuit board 2. It is arrange | positioned in the state arrange | positioned through, ie, the state temporarily fixed. In the present embodiment, the “temporarily fixed state” is a state in which the arrangement position of the semiconductor element 1 is not completely fixed and the arrangement position can be easily changed by applying an external force. It is.

加熱加圧ツール１０は、剛体材料にて形成されたツール本体部１２（剛体部）と、このツール本体部１２の図示下面に形成された略直方体形状の凹部１１を埋めるように取り付けられた弾性体であるエラストマー１３と、ツール本体部１２に内蔵された加熱ヒータ１４（加熱部）とを備えている。また、加熱加圧ツール１０には、ツール本体部１２とエラストマー１３とを一体的に昇降させるツール昇降装置１７が備えられている。加熱ヒータ１４は、半導体素子１の実装処理を行う間は、例えば、常時２００℃〜３００℃に加熱されている。そのため、ツール本体部１２の凹部１１に取り付けられているエラストマー１３もツール本体部１２からの伝熱で常時１８０℃〜２８０℃に加熱されている。また、エラストマー１３は、このように２８０℃の加熱状態でも弾力性を持つシリコーン樹脂で形成され、さらにゴム硬度として４０以上８０以下の仕様のものが用いられる。また、ツール本体部１２の凹部１１の縁部１８（加圧位置規制部）は、下降状態において、回路基板２の表面との当接部となっており、この縁部１８が回路基板２と当接されることで、ツール昇降装置１７による加熱加圧ツール１０の下降位置が規制される。また、この下降位置の規制位置（加熱加圧処理位置）において、半導体素子１に対する加熱加圧処理が行われる。さらに、凹部１１の深さは、少なくとも、半導体素子１の実装高さ（実装後の上面の高さ）よりも大きく設定されている。   The heating and pressing tool 10 is an elastic body attached to a tool main body 12 (rigid body) formed of a rigid material and a substantially rectangular parallelepiped recess 11 formed on the lower surface of the tool main body 12 in the drawing. An elastomer 13 as a body and a heater 14 (heating unit) built in the tool main body 12 are provided. The heating / pressurizing tool 10 is provided with a tool lifting / lowering device 17 that integrally lifts and lowers the tool main body 12 and the elastomer 13. The heater 14 is constantly heated to, for example, 200 ° C. to 300 ° C. during the mounting process of the semiconductor element 1. Therefore, the elastomer 13 attached to the recess 11 of the tool main body 12 is also always heated to 180 ° C. to 280 ° C. by heat transfer from the tool main body 12. In addition, the elastomer 13 is formed of a silicone resin having elasticity even in a heated state at 280 ° C., and a rubber hardness of 40 to 80 is used. Further, the edge 18 (pressing position restricting portion) of the recess 11 of the tool main body 12 is a contact portion with the surface of the circuit board 2 in the lowered state, and the edge 18 is connected to the circuit board 2. By the contact, the lowering position of the heating and pressing tool 10 by the tool lifting / lowering device 17 is regulated. In addition, the heating and pressurizing process is performed on the semiconductor element 1 at the regulation position (heat pressurizing process position) of the lowered position. Further, the depth of the recess 11 is set to be at least larger than the mounting height of the semiconductor element 1 (the height of the upper surface after mounting).

平行度矯正装置２０は、シート部材の一例である保護テープ２１を、ステージ１５の保持面に対して水平な状態にて張架して保持するホルダ２２（シート保持部）を備えている。ホルダ２２は、供給軸２３に巻き取られた状態の保護テープ２１をその一端にて供給可能に支持するとともに、供給された保護テープ２１をその他端にて巻き取り可能に回収軸２４にて巻き取って支持する。供給軸２３と回収軸２４とは、ホルダ２２にて同じ高さ位置に取り付けられており、その結果、供給軸２３と回収軸２４との間で保護テープ２１が所定の張力が付与された状態にて水平に張架されている。この保護テープ２１は、加熱加圧ツール１０の表面を、半導体素子１や樹脂シート３と直接接触することを防止する機能を有する。例えば、保護テープ２１は３０μｍ厚のフッ化樹脂フィルムで、弾性率は３９２ＭＰａのものが使用される。なお、保護テープ２１は、半導体素子１及びその周囲に拡がって配置される樹脂シート３を十分に覆うことができるような幅寸法に形成されている。また、保護テープ２１を支持する供給軸２３と回収軸２４とを同期させて回動させる図示しない回動手段が備えられている。   The parallelism correcting device 20 includes a holder 22 (sheet holding unit) that holds and holds a protective tape 21, which is an example of a sheet member, in a horizontal state with respect to the holding surface of the stage 15. The holder 22 supports the protective tape 21 wound around the supply shaft 23 so that the protective tape 21 can be supplied at one end thereof, and winds the supplied protective tape 21 around the recovery shaft 24 so that it can be wound up at the other end. Take and support. The supply shaft 23 and the recovery shaft 24 are attached at the same height position by the holder 22, and as a result, a predetermined tension is applied to the protective tape 21 between the supply shaft 23 and the recovery shaft 24. It is stretched horizontally. The protective tape 21 has a function of preventing the surface of the heating and pressing tool 10 from coming into direct contact with the semiconductor element 1 and the resin sheet 3. For example, the protective tape 21 is a fluororesin film having a thickness of 30 μm and an elastic modulus of 392 MPa. In addition, the protective tape 21 is formed in the width dimension which can fully cover the semiconductor element 1 and the resin sheet 3 arranged so as to spread around the semiconductor element 1. In addition, a rotation means (not shown) that rotates the supply shaft 23 and the recovery shaft 24 that support the protective tape 21 in synchronization with each other is provided.

平行度矯正装置２０には、支持する保護テープ２１とともにホルダ２２を一体的に昇降させるホルダ昇降装置２６が備えられている。ホルダ２２は、剛体材料にて形成され、その中央には、加熱加圧ツール１０が接触することなく通過可能な開口部２５が形成されている。従って、加熱加圧ツール１０の昇降が、ホルダ２２により妨げられることがない。また、このホルダ２２には、下降した状態で回路基板２をステージ１５に対して押さえる基板当接部２２ａがその外周下端に設けられている。なお、この外周下端の基板当接部２２ａは、加熱加圧ツール１０よりも外側に位置されるようにその配置が決定されている。   The parallelism correcting device 20 is provided with a holder lifting device 26 that lifts and lowers the holder 22 together with the supporting protective tape 21. The holder 22 is formed of a rigid material, and an opening 25 through which the heating and pressing tool 10 can pass without contacting is formed at the center thereof. Therefore, the raising and lowering of the heating and pressing tool 10 is not hindered by the holder 22. In addition, the holder 22 is provided with a substrate contact portion 22a that holds the circuit board 2 against the stage 15 in a lowered state at the lower end of the outer periphery thereof. In addition, the arrangement | positioning is determined so that the board | substrate contact part 22a of this outer periphery lower end may be located in the outer side rather than the heating-pressing tool 10. FIG.

次に、このような構成の実装装置９を用いて、回路基板２に半導体素子１を実装する手順について、図２〜図９の模式断面図を用いて、その前工程をも含めて説明する。   Next, a procedure for mounting the semiconductor element 1 on the circuit board 2 using the mounting apparatus 9 having such a configuration will be described using the schematic cross-sectional views of FIGS. .

まず、図２〜図４は、実装装置９に設置する前の回路基板２の作成工程を示している。図２に示すように、作業台３０上に保持された回路基板２の上に、所定の長さにカットされた樹脂シート３を貼り付ける。具体的には、ベーステープ３１に貼られた樹脂シート３に所定の間隔でカット部３２を形成した後、加熱加圧ツール３３（加熱加圧ツール１０とは別のツール）を用いて、回路基板２におけるそれぞれの半導体素子１の実装領域のみにベーステープ３１の上から押圧する。この時の加熱加圧ツール３３の加熱温度は、樹脂シート３が硬化反応を起こさず、かつ、樹脂シート３の軟化を起こさせ回路基板２への貼り付けを容易にする温度に設定されており、例えば、加熱温度６０〜１００℃、加圧時間０．１〜１秒の加熱加圧処理が行われて、樹脂シート３の回路基板２への貼り付けを行う。   First, FIGS. 2 to 4 show a process of creating the circuit board 2 before being installed in the mounting apparatus 9. As shown in FIG. 2, a resin sheet 3 cut to a predetermined length is pasted on the circuit board 2 held on the work table 30. Specifically, after forming cut portions 32 at predetermined intervals on the resin sheet 3 affixed to the base tape 31, a circuit is formed using a heating and pressing tool 33 (a tool different from the heating and pressing tool 10). Only the mounting region of each semiconductor element 1 on the substrate 2 is pressed from above the base tape 31. The heating temperature of the heating and pressing tool 33 at this time is set to a temperature at which the resin sheet 3 does not cause a curing reaction, and the resin sheet 3 is softened to be easily attached to the circuit board 2. For example, the heating and pressurizing process with a heating temperature of 60 to 100 ° C. and a pressing time of 0.1 to 1 second is performed, and the resin sheet 3 is attached to the circuit board 2.

次に、図３に示すように、それぞれの実装領域に樹脂シート３が貼り付けられた回路基板２を作業台３０に吸着保持させて平坦にした状態で、樹脂シート３を介して半導体素子１を仮止めする。具体的には、吸着ツール３４で半導体素子１を真空吸着し、回路基板２の実装領域と位置合わせを行った後、基板電極６と、半導体素子１のバンプ５とが樹脂シート３を介して対向し、かつ半導体素子１が樹脂シート３により保持されるように、荷重１〜３ｋｇｆ程度かつ±５μｍ以下の位置精度で半導体素子１を回路基板２に仮止めする。なお、バンプ５としては、ワイヤボンディング工法を応用したスタッドバンプ、またはウェットメッキ処理で形成するメッキバンプを用いる。   Next, as shown in FIG. 3, in a state where the circuit board 2 having the resin sheet 3 attached to each mounting region is sucked and held on the work table 30 and is flattened, the semiconductor element 1 is interposed via the resin sheet 3. Temporarily fix. Specifically, after the semiconductor element 1 is vacuum-sucked by the suction tool 34 and aligned with the mounting region of the circuit board 2, the substrate electrode 6 and the bump 5 of the semiconductor element 1 are interposed via the resin sheet 3. The semiconductor element 1 is temporarily fixed to the circuit board 2 with a positional accuracy of about 1 to 5 kgf and ± 5 μm or less so as to face each other and the semiconductor element 1 is held by the resin sheet 3. In addition, as the bump 5, a stud bump using a wire bonding method or a plating bump formed by wet plating is used.

次に、図４に示すように、作業台３０の吸着保持を解除し、それぞれの実装領域に樹脂シート３を介して半導体素子１が仮止めされた状態の回路基板２を作業台３０から取り外す。このように作業台３０から取り外された状態にてそのフレキシブル性などにより回路基板２は変形し、例えば、図示中央の半導体素子１のように仮止め姿勢が変化する、すなわち、回路基板２に対する半導体素子１の平行度にズレが生じるような場合がある。また、そのフレキシブル性などにより回路基板２自身の反りが原因で、このような仮止め姿勢が変化する場合がある。   Next, as shown in FIG. 4, the suction holding of the work table 30 is released, and the circuit board 2 in a state where the semiconductor element 1 is temporarily fixed to each mounting region via the resin sheet 3 is removed from the work table 30. . Thus, the circuit board 2 is deformed due to its flexibility and the like when it is detached from the work table 30, and the temporary fixing posture changes, for example, like the semiconductor element 1 in the center of the figure, that is, the semiconductor with respect to the circuit board 2. There may be a case where a deviation occurs in the parallelism of the element 1. Further, such a temporary fixing posture may change due to the warp of the circuit board 2 itself due to its flexibility or the like.

このように一部半導体素子１においてその仮止め姿勢が変化した状態の回路基板２を、図１Ａのステージ１５に乗せ換えた直後の状態を、図５に示す。図５に示す状態においては、ホルダ２２と加熱加圧ツール１０は共に回路基板２の表面から離間された上昇位置に配置されている。なお、図５〜図９は、実装装置９における実装工程を示す模式図である。   FIG. 5 shows a state immediately after the circuit board 2 in a state in which the temporary fixing posture is changed in the partial semiconductor element 1 is placed on the stage 15 in FIG. 1A. In the state shown in FIG. 5, both the holder 22 and the heating / pressurizing tool 10 are arranged at a raised position separated from the surface of the circuit board 2. 5 to 9 are schematic diagrams illustrating a mounting process in the mounting apparatus 9. FIG.

次に、図６に示すように、実装装置９において、ホルダ昇降装置２６によりホルダ２２の下降を開始する。なお、この下降開始の際には、図５に示すように、ホルダ２２において供給軸２３と回収軸２４との間で保護テープ２１が張架された状態とされている。ホルダ２２が下降されると、所定の張力にて張架された状態の保護テープ２１の下面が、半導体素子１の背面に当接し、さらにホルダ２２が降下することによって、その仮止め姿勢が変化した半導体素子１に保護テープ２１から下向きの加圧力が作用する。この下向きの加圧力が作用することにより、水平に張架された状態の保護テープ２１に倣うようにして、仮止め状態の半導体素子１の傾いた姿勢が、回路基板２に対して略水平な状態へと矯正される。なお、ここでは保護テープ２１の弾性が有効に作用して、様々な傾き姿勢を有する半導体素子１の仮止め姿勢を矯正することができる。特に、保護テープ２１の弾性は、エラストマー１３に比して十分に低いものであるため、仮止め状態の半導体素子１の水平方向に位置ズレを生じさせることなく、その姿勢、すなわち平行度を矯正することができる。   Next, as shown in FIG. 6, in the mounting device 9, the holder lifting device 26 starts to lower the holder 22. At the start of the lowering, as shown in FIG. 5, the protective tape 21 is stretched between the supply shaft 23 and the collection shaft 24 in the holder 22. When the holder 22 is lowered, the lower surface of the protective tape 21 stretched with a predetermined tension comes into contact with the back surface of the semiconductor element 1, and the holder 22 is further lowered to change its temporary fixing posture. A downward pressing force is applied to the semiconductor element 1 from the protective tape 21. By applying the downward pressure, the inclined posture of the semiconductor element 1 in the temporarily fixed state is substantially horizontal with respect to the circuit board 2 so as to follow the protective tape 21 in a horizontally stretched state. It is corrected to the state. Here, the elasticity of the protective tape 21 effectively acts, and the temporarily fixed posture of the semiconductor element 1 having various tilted postures can be corrected. In particular, since the elasticity of the protective tape 21 is sufficiently lower than that of the elastomer 13, the posture, that is, the parallelism is corrected without causing a positional shift in the horizontal direction of the semiconductor element 1 in the temporarily fixed state. can do.

このように、半導体素子１の平行度の矯正が行われた後、さらにホルダ２２を下降させると、図７に示すように、ホルダ２２の下端部である基板当接部２２ａが、保護シート２１を介して回路基板２の表面に当接する。この基板当接部２２ａの回路基板２への当接により、回路基板２に下向きの力が作用され、反り状態にあった回路基板２の反りが矯正され、ステージ１５に回路基板２が密着される。このような状態において、例えば、ステージ１５の吸着孔１６により回路基板２を吸着保持することにより、回路基板２を水平な状態かつ半導体素子１が回路基板２に対して平行な状態にて、回路基板２のステージ１５による保持が行われる。また、このような状態においてはホルダ２２の基板当接部２２ａにより回路基板２がステージ１５に対して押し付けられて保持された状態とされている。なお、本実施形態においては、ステージ１５が吸着孔１６による吸着機能を有する場合について説明するが、このような場合に代えて、ステージ１５が吸着機能を有さないような場合であっても、ホルダ２２による回路基板２の保持機能を用いて、回路基板２の保持を行うことができる。   As described above, when the parallelism of the semiconductor element 1 is corrected and the holder 22 is further lowered, the substrate contact portion 22a which is the lower end portion of the holder 22 becomes the protective sheet 21 as shown in FIG. Through the surface of the circuit board 2. By the contact of the substrate contact portion 22 a with the circuit board 2, a downward force is applied to the circuit board 2 to correct the warp of the circuit board 2 in the warped state, and the circuit board 2 is brought into close contact with the stage 15. The In such a state, for example, by holding the circuit board 2 by suction with the suction holes 16 of the stage 15, the circuit board 2 is in a horizontal state and the semiconductor element 1 is parallel to the circuit board 2. The substrate 2 is held by the stage 15. In such a state, the circuit board 2 is pressed against and held by the stage 15 by the board contact portion 22 a of the holder 22. In the present embodiment, the case where the stage 15 has a suction function by the suction holes 16 will be described, but instead of such a case, even if the stage 15 does not have a suction function, The circuit board 2 can be held using the holding function of the circuit board 2 by the holder 22.

このように、ステージ１５と半導体素子１を平行な状態とさせることで、次に説明する加熱加圧ツール１０による加熱加圧工程において、軟らかい弾性体であるエラストマー１３により半導体素子１を押圧した時に、半導体素子１に対して横方向への力が作用し、位置ズレ不良となることを確実に防止することができる。   In this way, when the stage 15 and the semiconductor element 1 are in a parallel state, when the semiconductor element 1 is pressed by the elastomer 13 which is a soft elastic body in the heating and pressing process by the heating and pressing tool 10 described below. Further, it is possible to reliably prevent a lateral displacement from acting on the semiconductor element 1 and causing a misalignment.

次に、図８に示すように、ホルダ２２で回路基板２に下方の力を加え、回路基板２の反りを矯正した状態のまま、ツール昇降装置１７による加熱加圧ツール１０の下降を開始する。加熱加圧ツール１０は、ホルダ２２の中央に設けられた開口部を通過して下降され、保護テープ２１を介して、凹部１１の縁部１８が回路基板２の表面に接触することで、その下降位置が規制された状態とされる。このような状態において、加熱加圧ツール１０の凹部１１に設けられたエラストマー１３が、保護テープ２１を介して、半導体素子１の上面に接触し、その後エラストマー１３が弾性変形されることにより、半導体素子１に押圧力を付与し、それぞれのバンプ５が回路基板２の基板電極６に接触され、押圧により変形されてその接触面積が増加された状態にて電気的接続がなされる。また、このような押圧により、樹脂シート３は周囲に拡がるように押圧されることになるが、弾性変形されたエラストマー１３により、保護テープ２１を介して半導体素子１の側部とともに、押し拡げられた樹脂シート３の外周部全体が押圧される。さらに、このような押圧状態において、ツール本体部１２に内蔵された加熱ヒータ１４より、エラストマー１３を介して伝熱が行われ、樹脂シート３が加熱温度１８０〜２００℃、加熱加圧時間１０〜２０秒にて加熱加圧が行われ、樹脂シート３が熱硬化される。   Next, as shown in FIG. 8, a downward force is applied to the circuit board 2 by the holder 22 to start the descent of the heating and pressing tool 10 by the tool elevating device 17 while the warp of the circuit board 2 is corrected. . The heating and pressing tool 10 is lowered through an opening provided in the center of the holder 22, and the edge 18 of the recess 11 comes into contact with the surface of the circuit board 2 through the protective tape 21. The lowered position is regulated. In such a state, the elastomer 13 provided in the recess 11 of the heating and pressing tool 10 comes into contact with the upper surface of the semiconductor element 1 via the protective tape 21, and then the elastomer 13 is elastically deformed, whereby the semiconductor A pressing force is applied to the element 1, and each bump 5 is brought into contact with the substrate electrode 6 of the circuit board 2, and electrical connection is made in a state where the contact area is increased by being deformed by the pressing. In addition, the resin sheet 3 is pressed so as to expand to the periphery by such pressing, but it is expanded together with the side portion of the semiconductor element 1 through the protective tape 21 by the elastically deformed elastomer 13. The entire outer periphery of the resin sheet 3 is pressed. Furthermore, in such a pressed state, heat transfer is performed via the elastomer 13 from the heater 14 built in the tool main body 12, and the resin sheet 3 is heated at a heating temperature of 180 to 200 ° C. and a heating and pressing time of 10 to 10. Heating and pressing are performed in 20 seconds, and the resin sheet 3 is thermally cured.

その結果、図９に示すように、半導体素子１のバンプ５と回路基板２の基板電極６とが電気的に接続された状態とされるとともに、この接続状態が熱硬化された樹脂シート３により封止された状態にて、半導体素子１が回路基板２に固定、すなわち実装される。また、半導体素子１の周囲にはみ出した樹脂シート３は、エラストマー１３により包み込まれるように加圧されるため、はみ出た樹脂シート３の周部は、山のすそ野のようななだらかな円弧状のフィレット部Ｆとして形成される。このような形状のフィレット部Ｆが形成されることにより、例えば、エラストマー１３を用いない加圧方法と比して、樹脂材料のはみ出し量が少なくなるとともに、半導体素子１の４辺で略同一形状のフィレット部Ｆを形成することができるため、バラツキのすくない形状を形成することができる。なお、下降状態にあったホルダ２２と加熱加圧ツール１０は、その後上昇されて、半導体素子１の回路基板２への実装処理が完了する。   As a result, as shown in FIG. 9, the bump 5 of the semiconductor element 1 and the substrate electrode 6 of the circuit board 2 are electrically connected, and this connection state is obtained by the thermosetting resin sheet 3. In a sealed state, the semiconductor element 1 is fixed to the circuit board 2, that is, mounted. Further, since the resin sheet 3 that protrudes around the semiconductor element 1 is pressurized so as to be wrapped by the elastomer 13, the peripheral portion of the protruding resin sheet 3 has a gentle arc-shaped fillet like a mountain ridge. Formed as part F. By forming the fillet portion F having such a shape, for example, the amount of protrusion of the resin material is reduced as compared with a pressurizing method that does not use the elastomer 13, and substantially the same shape is formed on the four sides of the semiconductor element 1. Since the fillet portion F can be formed, a shape with little variation can be formed. The holder 22 and the heating and pressing tool 10 that have been lowered are then raised, and the mounting process of the semiconductor element 1 on the circuit board 2 is completed.

エラストマー１３は、ゴム硬度４０〜８０と例えば消しゴムや自動車用のタイヤに近い軟らかさを有しており、直方体である半導体素子１を押圧した時に、半導体素子１のエッジ部分を押しているエラストマー１３に大きな応力がかかる場合がある。複数回の加圧処理を繰り返すと、このようなエッジ部分に接触する部分におけるエラストマー１３に割れ等が生じる場合が考えられる。しかしながら、本実施形態においては、保護テープ２１を介してエラストマー１３による半導体素子１の加圧を行っているため、半導体素子１のエッジ部分からエラストマー１３に付加される局所応力を保護テープ２１により緩和させることができ、このような割れの発生を未然に防止することができる。さらに、保護テープ２１を加熱加圧処理毎に巻き取り、新たな保護テープ２１を供給して張架させることにより、半導体素子１およびエラストマー１３に触れる部分の保護テープ２１は、毎回新たなものとすることができるため、半導体素子１に付着したホコリ、ゴミ、汚れなどの異物が、保護シート１５に転写しても、次の半導体素子１が汚染されることはない。また、エラストマー１３にほこり、ゴミ、汚れが付着することも防止され、エラストマー１３の寿命を長くすることができる。   The elastomer 13 has a rubber hardness of 40 to 80 and a softness close to, for example, an eraser or a tire for an automobile. When the semiconductor element 1 that is a rectangular parallelepiped is pressed, the elastomer 13 presses the edge portion of the semiconductor element 1. Large stress may be applied. When a plurality of pressurizing processes are repeated, there may be a case where a crack or the like occurs in the elastomer 13 in a portion that contacts such an edge portion. However, in this embodiment, since the semiconductor element 1 is pressurized by the elastomer 13 via the protective tape 21, local stress applied to the elastomer 13 from the edge portion of the semiconductor element 1 is relieved by the protective tape 21. The occurrence of such cracks can be prevented in advance. Further, by winding the protective tape 21 for each heating and pressurizing process, supplying the new protective tape 21 and stretching it, the protective tape 21 in contact with the semiconductor element 1 and the elastomer 13 is renewed every time. Therefore, even if foreign matter such as dust, dust or dirt attached to the semiconductor element 1 is transferred to the protective sheet 15, the next semiconductor element 1 is not contaminated. Further, dust, dirt and dirt are prevented from adhering to the elastomer 13 and the life of the elastomer 13 can be extended.

また、加熱加圧ツール１０の下降は特別な荷重制御や位置制御を必要とせず、単純な上下駆動だけで構成されている。すなわち、加熱加圧ツール１０の下降位置は、ツール本体部１２の凹部１１の縁部１８が保護テープ２１を介して回路基板２と当接することにより規制される構成が採用されている。このような構成が採用されていることにより、上記従来の実装装置に比べて、複雑な下降位置の制御が、保護テープ２１の厚みや弾性力に応じて軽減され、装置構成の簡素化を図ることが可能となる。また、保護テープ２１を介して縁部１８が回路基板２と当接するので、縁部１８が当接することによる回路基板２の損傷を抑えることができる。なお、半導体素子１への加圧力は、加熱加圧ツール１０の凹部１１の深さ寸法と、エラストマー１３のヤング率などの物性と、半導体素子１の寸法から決定される。   Further, the lowering of the heating and pressing tool 10 does not require special load control and position control, and is configured only by simple vertical drive. That is, a configuration is adopted in which the lowered position of the heating and pressing tool 10 is regulated by the edge 18 of the recess 11 of the tool main body 12 coming into contact with the circuit board 2 via the protective tape 21. By adopting such a configuration, as compared with the conventional mounting device described above, the complicated control of the lowered position is reduced according to the thickness and elastic force of the protective tape 21, and the device configuration is simplified. It becomes possible. Moreover, since the edge 18 contacts the circuit board 2 through the protective tape 21, damage to the circuit board 2 due to the contact of the edge 18 can be suppressed. The pressure applied to the semiconductor element 1 is determined from the depth dimension of the recess 11 of the heating and pressing tool 10, physical properties such as the Young's modulus of the elastomer 13, and the dimension of the semiconductor element 1.

また、半導体素子１をエラストマー１３で包み込むように加圧しているため、樹脂シート３に対しても包み込むようにその周囲から圧力がかかるため、樹脂シート３内部に混入していた気泡を小さくすることができ、エラストマー１３を用いない場合と比してボイドの形成を抑制することができる。   Further, since the semiconductor element 1 is pressurized so as to be wrapped with the elastomer 13, pressure is applied from the periphery so as to wrap the resin sheet 3 as well, so that the air bubbles mixed in the resin sheet 3 are reduced. As compared with the case where the elastomer 13 is not used, the formation of voids can be suppressed.

半導体素子１は、例えば２ｍｍ角〜１２ｍｍ角、加熱加圧ツール１０の加圧面は例えば、６ｍｍ角〜１６ｍｍ角、エラストマー１３の大きさは４ｍｍ〜１４ｍｍ角、その厚みは５ｍｍ〜１５ｍｍで構成することができる。   The semiconductor element 1 is, for example, 2 mm square to 12 mm square, the pressure surface of the heating and pressing tool 10 is, for example, 6 mm square to 16 mm square, the size of the elastomer 13 is 4 mm to 14 mm square, and the thickness is 5 mm to 15 mm. Can do.

また、エラストマー１３は、軟らかい弾性力と高熱伝導の特性を求められるため、均質なゴム材料を用いることが好ましく、半導体素子１の熱容量が大きい場合は、ゴム材料の中に熱伝導の高い、カーボン、金、銅など高熱伝導材料を含浸させた高熱伝導性ゴムを使用することが好ましい。   In addition, since the elastomer 13 is required to have a soft elastic force and high heat conduction characteristics, it is preferable to use a homogeneous rubber material. When the heat capacity of the semiconductor element 1 is large, a carbon material having high heat conduction in the rubber material. It is preferable to use a high thermal conductive rubber impregnated with a high thermal conductive material such as gold or copper.

さらに、図８から明らかなように、加熱加圧ツール１０が半導体素子１を押圧している１０〜２０秒間の状態に注目すると、隣接する実装部品としての半導体素子１と加熱加圧ツール１０との間には、ホルダ２２の基板当接部２２ａ、ホルダ２２自体、保護テープ２１が介在して、加熱加圧ツール１０からの熱輻射を遮蔽している。このように加熱加圧ツール１０から隣接する半導体素子１への熱輻射を遮ることによって、高密度実装の場合であってもその実装品質を高い状態にて保つことができる。また、ステージ１５からの熱伝導を抑えるために、本実施形態では、ステージ１５として１つの半導体素子１のサイズよりも僅かに大きい程度の大きさとなるように小型化されたステージ１５を採用している。このような２つの効果により、実装処理が未完の半導体素子１における樹脂シート３の熱硬化反応が発生せず、その良好な実装品質を得ることができる。具体的には、熱遮蔽部を設けなかった場合には、図８の実装工程を実施した場合には、隣接する半導体素子１の温度が８０〜１００℃に上昇するが、このような熱遮蔽部を設けることによって４０〜６０℃に抑制することができる。   Further, as apparent from FIG. 8, when attention is paid to the state of the heating and pressing tool 10 pressing the semiconductor element 1 for 10 to 20 seconds, the semiconductor element 1 and the heating and pressing tool 10 as the adjacent mounting components Between them, the substrate contact portion 22a of the holder 22, the holder 22 itself, and the protective tape 21 are interposed to shield heat radiation from the heating and pressing tool 10. Thus, by blocking the heat radiation from the heating / pressurizing tool 10 to the adjacent semiconductor element 1, the mounting quality can be kept high even in the case of high-density mounting. In order to suppress heat conduction from the stage 15, the present embodiment employs a stage 15 that is miniaturized so that the stage 15 is slightly larger than the size of one semiconductor element 1. Yes. Due to these two effects, the thermosetting reaction of the resin sheet 3 in the semiconductor element 1 in which the mounting process is not completed does not occur, and the good mounting quality can be obtained. Specifically, when the heat shielding portion is not provided, the temperature of the adjacent semiconductor element 1 rises to 80 to 100 ° C. when the mounting process of FIG. 8 is performed. By providing the part, the temperature can be suppressed to 40 to 60 ° C.

なお、保護テープ２１は、単数または複数の半導体素子の実装が完了するたびに、回収軸２４に巻き取られて、供給軸２３から新たな保護テープ２１が供給される。   The protective tape 21 is wound around the collecting shaft 24 and a new protective tape 21 is supplied from the supply shaft 23 every time mounting of one or more semiconductor elements is completed.

ここで、本実施形態の実装装置が備える加熱加圧ツールの変形例について説明する。   Here, a modified example of the heating and pressing tool provided in the mounting apparatus of the present embodiment will be described.

図１０に示す加熱加圧ツール４０は、ツール本体部４２の凹部４１の底面に凹凸部４１ａを形成し、ツール本体部４２とエラストマー４３との接触面積を増大させ、伝熱の効果を高めている。このような構成を採用することにより、半導体装置１の圧着時におけるエラストマー４３の低下温度を、凹凸部４１ａが形成されていない場合の２０℃から１０℃へと低減することができる。   The heating and pressing tool 40 shown in FIG. 10 has an uneven portion 41a formed on the bottom surface of the recessed portion 41 of the tool main body portion 42, increases the contact area between the tool main body portion 42 and the elastomer 43, and enhances the heat transfer effect. Yes. By adopting such a configuration, the lowering temperature of the elastomer 43 at the time of pressure bonding of the semiconductor device 1 can be reduced from 20 ° C. when the uneven portion 41 a is not formed to 10 ° C.

図１１に示す加熱加圧ツール５０は、凹部１１に設置されるエラストマー５３を第１のエラストマー５３ａと第２のエラストマー５３ｂの２層構造としたものである。具体的には、図１２に示すように、半導体素子１を押圧する部分、すなわち凹部１１の中央部には、ゴム硬度５０〜８０と比較的硬い第１のエラストマー５３ａを配置し、半導体素子１の周囲のはみ出した樹脂シート３を押圧する部分、すなわち凹部１１の周部には、ゴム硬度２０〜４９と比較的軟らかいエラストマー５３ｂを配置している。このように２種類の硬度のエラストマーを用いることにより、中央部の第１のエラストマー５３ａにより半導体素子１に対して比較的強い加圧力を付加することができ、周部の第２のエラストマー５３ｂにより樹脂シート３に対して適切な加圧力を与えることができる。このような構成は、例えば、半導体素子１の突起電極数が１００〜１０００バンプと多く、半導体素子１に対して十分な加圧力を付加する必要があるような場合に有効である。   In the heating and pressing tool 50 shown in FIG. 11, the elastomer 53 installed in the recess 11 has a two-layer structure of a first elastomer 53a and a second elastomer 53b. Specifically, as shown in FIG. 12, a relatively hard first elastomer 53 a having a rubber hardness of 50 to 80 is disposed in a portion that presses the semiconductor element 1, that is, in the central part of the recess 11. The rubber 53 having a hardness of 20 to 49 and a relatively soft elastomer 53b are arranged in the portion that presses the protruding resin sheet 3 around the periphery, that is, the peripheral portion of the recess 11. Thus, by using two types of elastomers, a relatively strong pressing force can be applied to the semiconductor element 1 by the first elastomer 53a at the central portion, and by the second elastomer 53b at the peripheral portion. An appropriate pressure can be applied to the resin sheet 3. Such a configuration is effective when, for example, the number of bump electrodes of the semiconductor element 1 is as large as 100 to 1000 bumps and it is necessary to apply a sufficient pressure to the semiconductor element 1.

逆に、図１３及び図１４に示すように、半導体素子１の突起電極が１〜９９と比較的少ない場合には、２層構造のエラストマーを逆の配置とすることが好ましい。具体的には、加熱加圧ツール６０において、半導体素子１を押圧する部分には、ゴム硬度２０〜４９と比較的軟らかい第１のエラストマー６３ａを配置し、半導体素子１の周囲のはみ出した樹脂シート３を押圧する部分には、ゴム硬度５０〜８０と比較的硬い第２のエラストマー６３ｂを配置することが好ましい。半導体素子１の突起電極が比較的少ない場合には、１つあたりの突起電極にかかる加熱加圧ツール６０の加圧力が大きくなり過ぎて、半導体素子１に損傷などが発生する恐れがある。上記のように第１及び第２のエラストマー６３ａ，６３ｂを配置することにより、半導体素子１を比較的低い荷重でエラストマー６３ａの内側に埋め込みながら、樹脂シート３に対して適切な荷重を付加することができる。したがって、１つあたりの突起電極にかかる加熱加圧ツール６０の加圧力を適切な大きさに抑えて、半導体素子１の損傷などの発生を抑えることができる。なお、エラストマーの硬度は、半導体素子１への荷重と、周部への荷重とのバランスで決定すればよい。   On the contrary, as shown in FIGS. 13 and 14, when the number of protruding electrodes of the semiconductor element 1 is relatively small as 1 to 99, it is preferable that the elastomer having a two-layer structure is reversed. Specifically, in the heating and pressurizing tool 60, a rubber sheet having a hardness of 20 to 49 and a relatively soft first elastomer 63 a is arranged in a portion that presses the semiconductor element 1, and a resin sheet that protrudes around the semiconductor element 1. It is preferable to dispose a relatively hard second elastomer 63b having a rubber hardness of 50 to 80 in a portion where 3 is pressed. When the number of protruding electrodes of the semiconductor element 1 is relatively small, the pressure applied by the heating / pressurizing tool 60 applied to each protruding electrode becomes too large, and the semiconductor element 1 may be damaged. By arranging the first and second elastomers 63a and 63b as described above, an appropriate load is applied to the resin sheet 3 while the semiconductor element 1 is embedded inside the elastomer 63a with a relatively low load. Can do. Therefore, it is possible to suppress the pressurizing force of the heating / pressurizing tool 60 applied to each protruding electrode to an appropriate magnitude, and to prevent the semiconductor element 1 from being damaged. The hardness of the elastomer may be determined by the balance between the load on the semiconductor element 1 and the load on the peripheral portion.

また、半導体素子１の厚みが厚い場合には、図１５に示す上下方向２層のエラストマーが有効である。つまり、図１５に示す加熱加圧ツール７０のように、第１及び第２のエラストマー７３ａ、７３ｂを上下方向に２層構造として、下層にゴム硬度２０〜４９と比較的軟らかい第２のエラストマー７３ｂを配置し、上層にゴム硬度５０〜８０と比較的硬い第１のエラストマー７３ａを配置することにより、半導体素子１に対して均一に下方への加圧力を与えながら、半導体素子１の周囲を低い圧力で包み込みながら、樹脂シート３に対して適切な荷重を付加することができる。つまり、半導体素子１の厚みが厚い場合には、上記エラストマーを２層構造とすることにより、自然とその背面に高い荷重がかかり、かつ、周部には低い荷重がかかることになり、樹脂シート３に対して適切な荷重を付加することができる。   Further, when the semiconductor element 1 is thick, the two-layered elastomer shown in FIG. 15 is effective. That is, like the heating and pressing tool 70 shown in FIG. 15, the first and second elastomers 73a and 73b have a two-layer structure in the vertical direction, and the second elastomer 73b is relatively soft with a rubber hardness of 20 to 49 in the lower layer. And a relatively hard first elastomer 73a having a rubber hardness of 50 to 80 is disposed on the upper layer, and the periphery of the semiconductor element 1 is lowered while uniformly applying a downward pressure to the semiconductor element 1. An appropriate load can be applied to the resin sheet 3 while wrapping with pressure. That is, when the thickness of the semiconductor element 1 is large, the elastomer has a two-layer structure, so that a high load is naturally applied to the back surface thereof, and a low load is applied to the peripheral portion. An appropriate load can be applied to 3.

また、図１６に示す加熱加圧ツール８０のように、ツール本体部８２の凹部８１の底部中央部分に突出部８１ａを形成して、エラストマー８３の中央部分より半導体素子１に対して付加される押圧力をその周部よりも高めるような構成を採用することもできる。   Further, like the heating and pressing tool 80 shown in FIG. 16, a protrusion 81 a is formed at the center of the bottom of the recess 81 of the tool body 82, and is added to the semiconductor element 1 from the center of the elastomer 83. A configuration in which the pressing force is higher than that of the peripheral portion can also be adopted.

さらに、図１７に示す加熱加圧ツール９０のように、縦方向の２層構造と、横方向の２層構造とを組み合わせて、凹部１１の底部中央部分に比較的硬い第１のエラストマー９３ａを配置し、この第１のエラストマー９３ａを包み込むように比較的軟らかい第２のエラストマー９３ｂを配置するような構成を採用することができる。   Further, as in the heating and pressing tool 90 shown in FIG. 17, the first elastomer 93 a that is relatively hard is formed at the bottom center portion of the recess 11 by combining the two-layer structure in the vertical direction and the two-layer structure in the horizontal direction. It is possible to employ a configuration in which the second elastomer 93b that is relatively soft is disposed so as to wrap around the first elastomer 93a.

また、上記それぞれの２層構造において、中央に配置されるエラストマーとして高熱伝導性を有するものを選択することにより、熱が伝達され難い樹脂シート３の中央部に確実に熱を伝達することができ、確実な熱硬化を行うことができる。   Further, in each of the above two-layer structures, by selecting an elastomer having high thermal conductivity as the elastomer disposed in the center, heat can be reliably transmitted to the central portion of the resin sheet 3 where heat is difficult to be transmitted. Reliable thermosetting can be performed.

なお、上記の実施形態では基板の具体例が回路基板２の場合を例に挙げて説明したが、このような場合に代えて、弾性を有する多層構造のフレキシブル基板が採用されるような場合にも同様に本実施形態を適用することができる。   In the above embodiment, the case where the specific example of the substrate is the circuit board 2 has been described as an example. However, instead of such a case, a flexible flexible substrate having elasticity is employed. Similarly, the present embodiment can be applied.

なお、上記様々な実施形態のうちの任意の実施形態を適宜組み合わせることにより、それぞれの有する効果を奏するようにすることができる。   It is to be noted that, by appropriately combining arbitrary embodiments of the various embodiments described above, the effects possessed by them can be produced.

本発明は、例えば、薄く反り易い樹脂材料で形成された回路基板に、複数の半導体素子をフリップチップ実装する際に、基板の反りと半導体素子の傾き（平行度）を矯正して、良好な接合品質を得ることができ、小型軽量化が要求される携帯電話装置やデジタルカメラなどの製品に使用される半導体パッケージの実装に有効である。   For example, when a plurality of semiconductor elements are flip-chip mounted on a circuit board formed of a thin and easily warped resin material, the present invention corrects the warpage of the substrate and the inclination (parallelism) of the semiconductor elements, Bonding quality can be obtained, and it is effective for mounting semiconductor packages used in products such as mobile phone devices and digital cameras that require a reduction in size and weight.

本発明の一の実施形態にかかる半導体素子の実装装置の模式断面図1 is a schematic cross-sectional view of a semiconductor device mounting apparatus according to an embodiment of the present invention. 図１Ａの実装装置の別の断面を示す模式断面図Schematic sectional view showing another section of the mounting apparatus of FIG. 1A 本実施形態の半導体素子の実装方法の手順を示す模式説明図であって、回路基板に樹脂シートが貼付されている状態を示す図It is a schematic explanatory view showing the procedure of the mounting method of the semiconductor element of the present embodiment, and shows a state in which a resin sheet is stuck on the circuit board 本実施形態の半導体素子の実装方法の手順を示す模式説明図であって、回路基板に半導体素子が仮止めされている状態を示す図It is a schematic explanatory view showing the procedure of the mounting method of the semiconductor element of the present embodiment, and shows a state in which the semiconductor element is temporarily fixed to the circuit board 本実施形態の半導体素子の実装方法の手順を示す模式説明図であって、半導体素子が仮止めされた回路基板が、作業台から取り外された状態を示す図FIG. 3 is a schematic explanatory view illustrating a procedure of a semiconductor element mounting method according to the present embodiment, in which a circuit board on which the semiconductor element is temporarily fixed is removed from a work table. 本実施形態の半導体素子の実装方法の手順を示す模式説明図であって、半導体素子が仮止めされた回路基板が、実装装置のステージ上に配置された状態を示す図FIG. 3 is a schematic explanatory view showing the procedure of the semiconductor element mounting method of the present embodiment, and shows a state in which the circuit board on which the semiconductor element is temporarily fixed is arranged on the stage of the mounting apparatus. 本実施形態の半導体素子の実装方法の手順を示す模式説明図であって、保護テープにより半導体素子の平行度が矯正されている状態を示す図It is a schematic explanatory view showing the procedure of the mounting method of the semiconductor element of the present embodiment, and shows a state in which the parallelism of the semiconductor element is corrected by a protective tape 本実施形態の半導体素子の実装方法の手順を示す模式説明図であって、ホルダにより回路基板の反りが矯正された状態を示す図FIG. 5 is a schematic explanatory view showing the procedure of the semiconductor element mounting method of the present embodiment, and shows a state in which the warping of the circuit board is corrected by the holder. 本実施形態の半導体素子の実装方法の手順を示す模式説明図であって、半導体素子の加熱加圧処理が行われている状態を示す図FIG. 5 is a schematic explanatory view showing the procedure of the semiconductor element mounting method of the present embodiment, and shows a state in which the heat and pressure treatment of the semiconductor element is performed 本実施形態の半導体素子の実装方法の手順を示す模式説明図であって、回路基板に半導体素子が実装された状態を示す図It is a schematic explanatory view showing the procedure of the mounting method of the semiconductor element of the present embodiment, and shows a state where the semiconductor element is mounted on the circuit board 本実施形態の変形例にかかる加熱加圧ツールの模式図Schematic diagram of a heating and pressing tool according to a modification of the present embodiment 本実施形態の別の変形例にかかる加熱加圧ツールの模式図Schematic diagram of a heating and pressing tool according to another modification of the present embodiment 図１１の加熱加圧ツールにより半導体素子の実装処理を行っている状態を示す模式図The schematic diagram which shows the state which is performing the mounting process of the semiconductor element with the heating-pressing tool of FIG. 本実施形態の変形例にかかる別の加熱加圧ツールの模式図Schematic diagram of another heating and pressing tool according to a modification of the present embodiment 図１３の加熱加圧ツールにより半導体素子の実装処理を行っている状態を示す模式図The schematic diagram which shows the state which is performing the mounting process of a semiconductor element with the heating-pressing tool of FIG. 本実施形態の別の変形例にかかる加熱加圧ツールの模式図Schematic diagram of a heating and pressing tool according to another modification of the present embodiment 本実施形態の別の変形例にかかる加熱加圧ツールの模式図Schematic diagram of a heating and pressing tool according to another modification of the present embodiment 本実施形態の別の変形例にかかる加熱加圧ツールの模式図Schematic diagram of a heating and pressing tool according to another modification of the present embodiment 従来の加圧ツールによる実装方法を示す模式図Schematic diagram showing mounting method using a conventional pressure tool

符号の説明Explanation of symbols

１ 半導体素子
２ 回路基板
３ 樹脂シート
４ アルミ電極
５ バンプ
６ 基板電極
９ 実装装置
１０ 加熱加圧ツール
１１ 凹部
１２ ツール本体部
１３ エラストマー
１４ 加熱ヒータ
１５ ステージ
２０ 平行度矯正装置
２１ 保護テープ
２２ ホルダ DESCRIPTION OF SYMBOLS 1 Semiconductor element 2 Circuit board 3 Resin sheet 4 Aluminum electrode 5 Bump 6 Substrate electrode 9 Mounting apparatus 10 Heating and pressing tool 11 Recess 12 Tool body part 13 Elastomer 14 Heating heater 15 Stage 20 Parallelism correction apparatus 21 Protective tape 22 Holder

Claims (8)

基板上に熱硬化性樹脂材料を介して配置された半導体素子を、加熱加圧ツールにて押圧して実装する半導体素子実装装置において、
シート部材を水平に張架して保持するシート保持部と、
上記張架された状態の上記シート部材で、上記半導体素子の上面を加圧するように、上記シート保持部を下降させる保持部昇降装置と、
その加圧面に配置されたエラストマーと、上記エラストマーを加熱する加熱部とを備える加熱加圧ツールと、
上記シート部材を介して上記エラストマーにて上記半導体素子の上面を加圧するとともに、上記エラストマーを介して上記半導体素子及び上記樹脂材料を加熱するように、上記加熱加圧ツールを下降させるツール昇降装置とを備え、
上記加熱加圧ツールは、上記エラストマーがその内側に配置される凹部を、上記加圧面に有する剛体部を備え、
上記エラストマーは、上記剛体部の上記凹部の中央に配置される第１のエラストマーと、上記凹部において上記第１のエラストマーの周囲に配置される第２のエラストマーとを備え、上記第１のエラストマーは上記第２のエラストマーよりも高い硬度を有する、半導体素子実装装置。 In a semiconductor element mounting apparatus for mounting a semiconductor element disposed on a substrate via a thermosetting resin material by pressing with a heating and pressing tool,
A sheet holding unit for holding the sheet member horizontally stretched;
A holding unit lifting device for lowering the sheet holding unit so as to pressurize the upper surface of the semiconductor element with the sheet member in the stretched state;
A heating and pressing tool comprising an elastomer disposed on the pressing surface and a heating unit for heating the elastomer;
A tool lifting and lowering device that pressurizes the upper surface of the semiconductor element with the elastomer through the sheet member and lowers the heating and pressing tool so as to heat the semiconductor element and the resin material through the elastomer; equipped with a,
The heating and pressurizing tool includes a rigid body portion having a concave portion in which the elastomer is disposed on the inner side thereof on the pressing surface,
The elastomer includes a first elastomer disposed in the center of the concave portion of the rigid body portion, and a second elastomer disposed around the first elastomer in the concave portion, wherein the first elastomer is A semiconductor element mounting apparatus having a hardness higher than that of the second elastomer . 上記半導体素子は、突起電極数が１００〜１０００である、請求項１に記載の半導体素子実装装置。  The semiconductor element mounting apparatus according to claim 1, wherein the number of protruding electrodes of the semiconductor element is 100 to 1000. 上記シート部材が樹脂シートである、請求項１または２に記載の半導体素子実装装置。 The sheet member is a resin sheet, the semiconductor element mounting apparatus according to claim 1 or 2. 上記シート部材を介して、上記エラストマーにて、上記半導体素子の上面および側面ならびに上記樹脂材料を押圧する、請求項１から３のいずれか１項に記載の半導体素子実装装置。 4. The semiconductor element mounting apparatus according to claim 1, wherein the upper surface and the side surface of the semiconductor element and the resin material are pressed by the elastomer through the sheet member. 5. 上記シート部材の弾性率は、上記エラストマーの弾性率より低い、請求項１から４のいずれか１項に記載の半導体素子実装装置。 5. The semiconductor element mounting apparatus according to claim 1, wherein an elastic modulus of the sheet member is lower than an elastic modulus of the elastomer. 上記第１のエラストマーは、上記第２のエラストマーよりも高い熱伝導性を有する、請求項１から５のいずれか１項に記載の半導体素子実装装置。 The semiconductor element mounting apparatus according to claim 1, wherein the first elastomer has higher thermal conductivity than the second elastomer. 上記加熱加圧ツールによる上記半導体素子の加熱加圧状態において、上記第１のエラストマーが上記半導体素子に上面を、上記シート部材を介して加圧するように配置され、上記第２のエラストマーが、上記半導体素子の周囲へ拡がるように配置される上記樹脂材料を、上記シート部材を介して加圧するように配置される、請求項１から６のいずれか１項に記載の半導体素子実装装置。 In the heating and pressing state of the semiconductor element by the heating and pressing tool, the first elastomer is arranged to press the upper surface of the semiconductor element through the sheet member, and the second elastomer is The semiconductor element mounting apparatus according to claim 1, wherein the resin material disposed so as to spread around the semiconductor element is disposed so as to pressurize the resin material via the sheet member. 上記剛体部における上記凹部の縁部が、上記加熱加圧ツールの加圧高さ位置を上記基板表面との当接により規制する加圧位置規制部である、請求項１から７のいずれか１項に記載の半導体素子実装装置。 Edge of the recess in the rigid body section, the a pressurized position of the heating pressure tool is a pressure position regulating portion for regulating the contact between the substrate surface, any one of claims 1 to 7 1 The semiconductor element mounting apparatus according to item.
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