JP5105148B2 - Display device - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a new-type color display device having excellent display characteristics, in particular, a color display device making use of the color generation or color elimination by electrochromic. <P>SOLUTION: A display device is provided with; an electrochromic layer (13), which can reversibly generate or eliminate color, and a color filter layer (11) between a first electrode (7) and a second electrode (21). Thus, color display can be performed by using the electrochromic layer and the color filter layer. By laminating the electrochromic layer and the color filter layer, position alignment becomes easy, and an aperture rate is improved. Accordingly, display characteristics are improved. <P>COPYRIGHT: (C)2009,JPO&amp;INPIT

Description

  The present invention relates to a display device.

  A technique for providing a color display by providing a color display on a reflective display element for monochrome display has been studied.

For example, Patent Document 1 below discloses a technique for a color filter excellent in brightness and contrast and a reflective color display having the color filter. Patent Document 2 below discloses a scattering reflection type color display body in which a color filter is provided on a microcapsule layer.
JP 2003-107234 A JP 2003-108035 A

  However, in the color display structure described in Patent Document 1, it is necessary to form a glass substrate on which a color filter is formed and a glass substrate on which a pixel electrode or the like is formed, and align these substrates. At this time, alignment accuracy is required, which causes an increase in cost. In addition, the aperture ratio of the pixel is reduced in order to secure an alignment margin.

  In addition, in the configuration in which the color filter is formed on the counter substrate after sealing the glass substrate on the counter electrode side (counter substrate) and the glass substrate on which the pixel electrode or the like is formed, Thus, an interval corresponding to the thickness of the counter substrate is generated between the color filter and the display unit, which becomes a factor that limits the viewing angle.

  Therefore, an object of the present invention is to provide a new type of color display device having good display characteristics. In particular, it is an object to provide a color display device utilizing electrochromic color development or decoloration.

  The display device according to the present invention includes a first substrate, a second substrate, a reflective layer positioned between the first substrate and the second substrate, and a position between the reflective layer and the second substrate. A color filter layer, an electrochromic material layer positioned between the color filter layer and the second substrate, an electrolyte layer positioned between the electrochromic material layer and the second substrate, and the electrolyte layer And a counter electrode positioned between the second substrate and the barrier layer positioned between the reflective layer and the electrolyte layer and in contact with the color filter layer and the electrochromic material layer, respectively. It is characterized by.

  According to this, since the color filter layer and the electrochromic material layer overlap so as to be in contact with the same partition wall, the colored light passing through the color filter layer can surely pass through the electrochromic material layer, and the display characteristics are improved. improves.

  The display device preferably includes a pixel electrode positioned between the reflective layer and the color filter layer.

  In the display device, it is preferable that the reflective layer is a pixel electrode.

  In the display device, it is preferable that the color filter layer has conductivity.

The display device preferably includes a pixel electrode positioned between the reflective layer and the color filter layer.

  The display device preferably includes a transistor positioned between the first substrate and the reflective layer, and the transistor overlaps the partition wall.

  In the display device, it is preferable that the partition wall surrounds the color filter layer and the electrochromic material layer.

  In the above display device, it is preferable that the electrochromic material layer develops a dark color by an oxidation-reduction reaction.

  The display device according to the present invention includes a first substrate, a second substrate, a reflective layer positioned between the first substrate and the second substrate, and between the reflective layer and the second substrate. A plurality of color filter layers located between the plurality of color filter layers and the second substrate, and between the plurality of electrochromic material layers and the second substrate. An electrolyte layer positioned between the electrolyte layer and the second substrate, a reflective layer and the electrolyte layer, the plurality of color filter layers, and the plurality of color filter layers. Partition walls respectively contacting the electrochromic material layer, each of the plurality of electrochromic material layers expressing a dark color by oxidation-reduction reaction, and the plurality of color filter layers including a plurality of colors. Those may be characterized in that.

  In addition, the display device according to the present invention includes a first substrate, a second substrate, a plurality of reflection layers positioned between the first substrate and the second substrate, the plurality of reflection layers, and the second substrate. A plurality of color filter layers positioned between the substrate, a plurality of electrochromic material layers positioned between the plurality of color filter layers and the second substrate, the plurality of electrochromic material layers, and the second An electrolyte layer positioned between the substrate; a counter electrode positioned between the electrolyte layer and the second substrate; and a plurality of color filters positioned between the plurality of reflective layers and the electrolyte layer. Each of the plurality of electrochromic material layers, and each of the plurality of electrochromic material layers develops a dark color by an oxidation-reduction reaction. Layer is one containing a plurality of colors, it may be characterized in that.

  In the display device, it is preferable that the partition includes a light shielding material.

    Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings. In addition, the same or related code | symbol is attached | subjected to what has the same function, and the repeated description is abbreviate | omitted.

<Embodiment 1>
(Configuration of display device)
FIG. 1 is a cross-sectional view illustrating a configuration of the display device of the present embodiment. 2 is a partially enlarged view of FIG. 1, and FIG. 3 is a partial plan view. FIG. 4 is a circuit diagram schematically showing an active matrix display portion.

  As shown in FIG. 1, the display device 1 according to the present embodiment has a configuration in which each part constituting a pixel is sandwiched between a substrate S1 and a transparent substrate S2.

  The substrate (active matrix substrate, first substrate) S1 is an insulating substrate such as a glass substrate, for example. A thin film transistor (TFT) layer 5 is disposed on the substrate S1. The thin film transistor layer 5 includes a TFT portion T1 and an interlayer insulating film T2 covering the TFT (FIG. 1). As shown in detail in FIG. 2, the TFT portion T1 includes a TFT, a connection portion C electrically connected to the TFT, and a wiring M. The TFT includes a semiconductor film S, a gate insulating film GI on the semiconductor film S, and a gate electrode G on the gate insulating film GI. The semiconductor film S includes source and drain regions SD. Note that an interlayer insulating film IL is located between the semiconductor film S and the wiring M. In FIG. 2, a base insulating film (transparent insulating film) 2 is disposed between the substrate S1 and the TFT portion (semiconductor film S) T1. This base insulating film 2 may be omitted.

Here, in the present embodiment, the interlayer insulating film T2 is used as a reflective layer. This reflective layer is a white reflective layer and is made of, for example, an insulating film having a high reflectance. As such an insulating film, for example, a fluorine resin such as titanium oxide (TiO ₂ ) or polytetrafluoroethylene (PTFE), barium sulfate, magnesium oxide, or the like can be used.

  The pixel electrode 7 is disposed on the interlayer insulating film T2. The pixel electrode 7 is provided independently for each pixel (see FIG. 3). Each pixel is separated by a partition wall 9 made of an insulating film. In other words, one pixel region is surrounded by the partition wall 9. As the pixel electrode 7, ITO (Indium Tin Oxide) can be used. ITO is a material having high transparency while having conductivity.

  Further, a color filter layer 11 including a red filter 11R, a green filter 11G, and a blue filter 11B is disposed on the pixel electrode 7. Each filter (11R, 11G, 11B) has conductivity and is separated by a partition wall 9 (see FIGS. 1 and 3).

  As the conductive color filter layer (CF layer) 11, for example, ITO in which an inorganic metal pigment is dispersed can be used. ITO can be colored by containing an inorganic metal pigment.

  For example, it is possible to configure a red filter by mixing cadmium red, a blue filter by mixing bitumen, and a green filter by mixing chrome oxide green.

  Further, as the conductive color filter layer 11, a conductive polymer in which a coloring material is dispersed may be used. For example, each filter can be configured by using polyphenylene or polyphenylene vinylene as a conductive polymer material, mixing irgadine red as a red coloring material, metal-free phthalocyanine as a blue coloring material, and copper phthalocyanine as a green coloring material. it can.

  An electrochromic material layer 13 is disposed on the color filter layer 11. The electrochromic material layer 13 is separated by the partition walls 9. An electrochromic material (electrochromic compound, electrochromic element) is a material that is reversibly colored or decolored by application of a voltage. This coloring or decoloring phenomenon (electrochromism) is caused by the occurrence of an oxidation reaction or reduction reaction of a material by application of a voltage.

Examples of the electrochromic material (EC material) that can reversibly change between black and transparent (colorless and decolored) include tungsten oxide WO ₃ , iridium oxide ILOx, and nickel oxide NiOx. These materials are suitable for use in the display device of the present embodiment because the color changes darkly even when used alone. Of course, these materials may be mixed and used.

  Here, black does not mean perfect black (absorption of 100% of visible light, transmitted light is 0%), and may be a dark color (blackish color), for example, dark blue, dark blue, This includes cases where most of the visible light is absorbed, such as dark brown.

  In addition to the above, a graft conductive polymer film may be used as the electrochromic material. This graft conductive polymer film is a material in which a conjugated molecular pendant is bonded to a main chain which is a conductive polymer via a metal (ion). Both the conjugated molecular side that becomes the pendant and the side that becomes the polymer chain by being polymerized may be any conjugated polymer material that is interposed between the electrodes and generates electrical activity when the electrodes are energized. As an example of such a conjugated polymer material, a main material is one or a plurality of materials selected from polypyrrole, polythiophene, polyaniline, polyazulene, polyindole, or polycarbazole. Examples of the compound exemplified as the π-conjugated conductive polymer include polyacetylene, poly (p-phenylene), polythiophene, poly (3-methylthiophene), polyisothianaphthene, poly (p-phenylene sulfide), poly (P-phenylene oxide), polyaniline, poly (p-phenylene vinylene), poly (thiophene vinylene), polyperinaphthalene, nickel phthalocyanine and the like may be used. The graft conductive polymer in which the conductive polymer main chain and the conjugated molecular pendant are bonded via a metal (ion) switches between colorless and black, which is useful as an electrochromic device. Examples of the metal (ion) include silver, sodium, potassium, zinc, yttrium, cadmium, calcium, chromium, cobalt, samarium, strontium, tin, cesium, iron, copper, nickel, manganese, magnesium, barium and rubidium. Is used. One kind or many kinds of metals (ions) may be used.

  An organic electrochromic material may also be used. In an organic compound, the absorption wavelength of light can be changed by changing a substituent. Therefore, the amount of absorbed light can be adjusted by using a mixture of a plurality of organic compounds having different substituents. Therefore, for example, black can be displayed by adjusting the mixed compound so that light is absorbed in the entire visible light region.

  An electrolyte layer 15 is disposed on the electrochromic material layer 13. The electrolyte layer 15 extends over a plurality of pixels including the partition wall 9. The electrolyte layer 15 may be in a liquid state or may be a solid electrolyte layer using a gel polymer material.

  A counter electrode 21 is disposed on the back surface of the substrate (counter substrate, second substrate) S2. A counter electrode 21 is located on the electrolyte 15. The substrate S2 is a glass substrate, for example, and is an insulating substrate having translucency.

  As described above, the electrochromic material layer 13 and the electrolyte layer 15 between the counter electrode 21 and the pixel electrode 7 can be colored / decolored by applying a potential to cause an oxidation / reduction reaction. For example, black can be developed by applying a predetermined potential, and color can be erased by applying a reverse potential. When the color is erased, the white color is turned white by the white reflective layer (interlayer insulating film T2). Therefore, monochrome display can be realized.

  Color display can be performed by outputting the display through the red, green, and blue filters (11R, 11G, and 11B).

  As described above, according to the present embodiment, since the color filter layer 11 and the electrochromic material layer 13 are stacked, color display can be performed using the coloration / decoloration of the electrochromic material layer 13.

  Further, by stacking these layers, the alignment between the substrate S1 and the substrate S2 is facilitated, and there is no need to provide an alignment margin. Therefore, the alignment accuracy of the substrate S1 and the substrate S2 is relaxed, and assembly in a short process becomes possible. In addition, the aperture ratio of the pixel can be improved. Furthermore, since the display part (coloring / decoloring part) and the color filter layer 11 can be brought close to each other, the viewing angle is widened. Thus, display characteristics can be improved.

  Although not explicitly shown in FIGS. 1 and 2, as shown in FIGS. 3 and 4, in the so-called active matrix display device, for example, the gate line GL extends in a direction intersecting with the source line SL. It is extended.

That is, in the pixel region A, unit pixel regions partitioned by the source line (wiring) SL and the gate line GL are arranged in an array. In this unit pixel region, the TFT and the pixel electrode 7 are arranged. One end (source region) of the TFT is connected to the source line SL, and the other end (drain region) is connected to the pixel electrode 7. The gate electrode of the TFT is connected to the gate line GL. In addition to the gate line GL, a power supply potential line, a ground potential line, and the like also extend. For example, a large number of wiring layers may be formed in the interlayer insulating film IL shown in FIG. 2 or other layers not shown. . As shown in FIG. 4, the gate line GL is driven by the gate driver Gd, and the source line SL is driven by the source driver Sd.
(Manufacturing method of display device)
Next, a method for manufacturing the display device of the present embodiment will be described with reference to FIGS. In addition, the description which overlaps with said structure description is abbreviate | omitted.

  First, as shown in FIGS. 1 and 2, a glass substrate is prepared as a substrate S1, and a silicon oxide film, for example, is formed as a base insulating film 2 on the substrate S1 by a CVD (chemical vapor deposition) method. Then, a TFT is formed on the base oxide film 2. The base oxide film 2 may be omitted.

  Next, an amorphous silicon film, for example, is formed as a semiconductor film S on the base protective film 2 by a CVD method. Next, this film is crystallized by laser irradiation to form a polycrystalline silicon film.

  Next, the semiconductor film S is patterned to form a plurality of island-shaped semiconductor films S. For example, a photoresist film is formed on the semiconductor film S, and exposed and developed to leave the photoresist film in an island shape. Next, the island-shaped semiconductor film S is formed by dry etching using the remaining photoresist film as a mask. Thereafter, the remaining photoresist film is removed by ashing. A series of steps from formation of the photoresist, exposure / development, etching and resist removal is referred to as “patterning”.

  Next, for example, a silicon oxide film is formed as a gate insulating film GI on the semiconductor film S by a CVD method. Note that the gate insulating film GI may be formed by thermal oxidation. Next, as the gate electrode G, for example, an aluminum (Al) film is formed on the gate insulating film GI by a sputtering method and patterned. Note that the gate electrode G may be formed using a semiconductor film such as silicon in addition to a metal film such as Al.

  Next, source and drain regions SD are formed in the semiconductor film S on both sides of the gate electrode by implanting boron (B) or phosphorus (P), for example, using impurity ions with the gate electrode G as a mask. When phosphorus is ion-implanted, n-type source / drain regions SD are formed. When boron is ion-implanted, p-type source / drain regions SD are formed. One of the source and drain regions SD is a source region and the other is a drain region. In FIG. 2, a region connected to the pixel electrode 7 is a drain region, and the other is a source region. A TFT is formed by the above process.

  Next, a silicon oxide film, for example, is formed as an interlayer insulating film IL on the gate electrode (TFT) G by a CVD method, and contact holes are formed by etching the interlayer insulating film IL on the source and drain regions SD. Next, an Al film, for example, is deposited as a conductive film on the interlayer insulating film IL including the inside of the contact hole by a sputtering method, and patterned to connect the connection portion C and the wiring M electrically connected to the source and drain regions SD. Form.

  Next, an insulating film having a high reflectance is formed on the wiring M as an interlayer insulating film T2 that also serves as a reflective layer (reflective layer, reflective film). For example, the insulating material solution is applied by an ink jet method or a spin coating method, and solidified by heat treatment to form the interlayer insulating film T2. Note that the interlayer insulating film T2 may be formed using a CVD method or the like. Next, a contact hole is formed by selectively removing the interlayer insulating film T2 on the wiring M. Next, an ITO film, for example, is deposited as a conductive film on the interlayer insulating film T2 including the inside of the contact hole by sputtering, and patterned to connect the connection portion C and the pixel electrode (transparent electrode) 7 connected to the wiring M. Form. As shown in FIG. 3, the pixel electrode 7 is patterned for each pixel region. According to this, the semiconductor film of the TFT can be shielded from light by the reflective layer. For example, when the semiconductor film is formed of silicon, light may enter the TFT channel region and a leak current may be generated, which can be suppressed. In addition, as shown in FIG. 2, if the reflective layer is formed over the entire surface including between the TFT and a partition wall described later, the light shielding effect is further enhanced.

  Next, an insulating film is formed on the pixel electrodes 7 and patterned to form partition walls 9 between the pixel electrodes 7. The partition wall 9 is formed in a lattice shape between the pixel regions so as to surround the pixel region. Moreover, it is preferable that the partition 9 contains a light-shielding material. According to this, the light reflected by the interlayer insulating film T2 and colored through the color filter layer 11 does not pass through the later-described electrochromic material layer 13, but passes through the partition wall 9 and is visually recognized. Can be prevented. That is, when the electrochromic material layer 13 shows a dark color, it can be prevented that the color is displayed through the partition wall 9. The partition wall 9 may be formed on the interlayer insulating film T2, and the pixel electrode (ITO film) 7 may be formed by an inkjet method. Next, a red, green or blue filter (11R, 11G, 11B) is formed in the region surrounded by the partition walls 9. Each filter is formed by, for example, discharging an ITO material solution in which an inorganic metal pigment is dispersed into the partition wall 9 by an inkjet method, and performing drying and baking. Each filter may be formed by discharging and baking a solution in which a coloring material is dispersed in the above-described conductive polymer. Note that the color filter layer 11 may be formed by a sputtering method or a CVD method, but the color filter layer 11 can be easily formed with good flatness by using an inkjet method.

  Next, an electrochromic material layer 13 is formed on the color filter layer 11. The electrochromic material layer 13 is discharged into the partition wall 9 using an ink jet method and solidified by heat treatment. Also in this case, the electrochromic material layer 13 may be formed by using a sputtering method or a CVD method, but the electrochromic material layer 13 can be easily formed with good flatness by using an ink jet method. Moreover, the color filter layer 11 and the electrochromic material layer 13 can be easily laminated.

  Next, a substrate S2 on which the counter electrode 21 is formed is prepared. As the substrate S2, for example, a glass substrate is used, and for example, an ITO film is formed on the substrate S2 as the counter electrode 21 by a sputtering method.

  The substrate S2 is opposed to the substrate S1, and for example, a liquid electrolyte layer 15 is sealed between the electrochromic material layer 13 and the counter electrode 21, whereby the display device is substantially completed. When the solid electrolyte layer 15 is used, the electrolyte layer 15 may be formed on the uppermost layer of the first or second substrate S1, S2, and these substrates may be bonded.

  Thus, the flatness of these layers can be improved by forming the color filter layer 11 and the electrochromic material layer 13 by an inkjet method. In particular, the distance between the electrochromic material layer 13 and the counter electrode 21 can be made uniform, uniformity of electric field strength is ensured, and display characteristics are improved. Further, by forming the partition wall 9 on the substrate S1 and forming the color filter layer 11 and the electrochromic material layer 13 using an ink jet method, the alignment accuracy between the substrate S1 and the substrate S2 is relaxed, and the process can be performed in a short process. Assembly becomes possible. In addition, the aperture ratio of the pixel can be improved. Furthermore, since the display part (coloring / decoloring part) and the color filter layer 11 can be brought close to each other, the display characteristics can be improved, for example, the viewing angle is widened.

<Embodiment 2>
(Configuration of display device)
In Embodiment 1, the color filter layer 11 is disposed on the pixel electrode 7, but the pixel electrode 7 may be disposed on the color filter layer 11. FIG. 5 is a cross-sectional view illustrating a configuration of the display device of the present embodiment. FIG. 6 is a partially enlarged view of FIG. In addition, the same code | symbol is attached | subjected to the location which has the same function as Embodiment 1, and the description is abbreviate | omitted.

  As shown in FIGS. 5 and 6, in the present embodiment, the thin film transistor layer 5 including the TFT portion T1 and the interlayer insulating film T2 is disposed on the substrate S1. One end of the TFT is connected to the pixel electrode 7.

  In the interlayer insulating film T2, a partition wall 9 made of an insulating film surrounding one pixel region is disposed. Inside the partition wall 9, a color filter layer 11, a pixel electrode 7 and an electrochromic material layer 13 are stacked in this order from the lower layer. Yes. Here, one end of the TFT is connected to the pixel electrode 7 via a connection portion in the color filter layer 11.

In the upper layer of the electrochromic material layer 13, the electrolyte layer 15, the counter electrode 21, and the substrate S2 are arranged as in the first embodiment.
(Manufacturing method of display device)
Next, a method for manufacturing the display device of this embodiment will be described with reference to FIGS. Note that description of the same steps as those in Embodiment 1 is omitted.

  Similar to the first embodiment, the base oxide film 2 and the TFT are formed on the substrate S1. Next, an interlayer insulating film IL, a connection portion C, and a wiring M are formed on the TFT. Next, an insulating film having a high reflectivity is formed on the wiring M as an interlayer insulating film T2.

  Next, an insulating film is formed on the interlayer insulating film T2, and the partition wall 9 is formed by patterning. The partition wall 9 is formed in a lattice shape between the pixel regions so as to surround the pixel region.

  Next, as in the first embodiment, a color filter layer 11 made of red, blue or green filters (11R, 11B, 11G) is formed in the region surrounded by the partition walls 9. Next, a contact hole is formed by selectively removing the interlayer insulating film T2 and the color filter layer 11 on the wiring M. Next, the pixel electrode 7 is formed on the color filter layer 11 including the inside of the contact hole, by discharging an ITO material solution into the partition wall 9 by an ink jet method, and performing drying and baking.

  Next, as in the first embodiment, an electrochromic material layer 13 is formed in a region surrounded by the partition walls 9. Next, with the counter electrode 21 side of the substrate S2 facing downward, the substrate S2 is opposed to the substrate S1, and a liquid electrolyte layer 15 is sealed between the electrochromic material layer 13 and the counter electrode 21, for example.

  Thus, the apparatus structure and the manufacturing method of the present embodiment also have the same effects as those of the first embodiment. Furthermore, in this embodiment, since the color filter layer 11 is not located between the pixel electrode 7 and the electrochromic material layer 13, the insulating color filter layer 11 can be used. Of course, the conductive color filter layer 11 may be used.

<Embodiment 3>
The present invention is not limited to the configuration (manufacturing method) of the display device of the first and second embodiments, and various modifications can be made. In the present embodiment, the modified example will be described.

  FIG. 7 summarizes the stacked state of the constituent layers of the display device of this embodiment. In each column (No. 8-A, 8-B, 8-C, 9-A, 9-B, 9-C, 10-A, 10-B, 10-C), the layers of the display device are stacked. Indicates the state. For reference, no. Column 1 and No. In column 5, the state of the lamination of the constituent layers corresponding to the first embodiment (FIG. 1) and the second embodiment (FIG. 5) is also shown. In FIG. 7, the electrolyte layer 15, the counter electrode 21, and the substrate S2 on the EC material layer are omitted in all the columns. 8 to 10 are cross-sectional views of the display device corresponding to the respective columns in FIG.

  As shown in the column “8-A” in FIG. 7 and FIG. 8A, the pixel electrode 7 in FIG. 1 may be omitted, and the conductive color filter layer 11 may be used as the pixel electrode.

  Further, as shown in the column “8-B” in FIG. 7 and FIG. 8B, the pixel electrode 7 may be used as a reflective layer instead of the interlayer insulating film T2 that also serves as the reflective layer in FIG. By using a highly reflective metal layer such as Al or silver (Ag) as the pixel electrode 7, the pixel electrode and the reflective layer can be used together. In this case, it is not necessary to use a highly reflective film for the interlayer insulating film T2 above the TFT.

  Further, as shown in the column “8-C” in FIG. 7 and FIG. 8C, a reflective layer may be provided between the thin film transistor layer 5 and the substrate S1. Also in this case, it is not necessary to use a highly reflective film for the interlayer insulating film T2 above the TFT. Further, when the insulating reflective layer 3 is used, it may also serve as the base insulating film 2 in FIG. That is, the base insulating film 2 may be omitted and the insulating reflective layer 3 may be formed at this position. In addition, when the conductive reflective layer 3, for example, the above-described highly reflective metal layer is used, the reflective layer 3 may be provided between the base insulating film 2 and the substrate S1 in FIG.

  Further, as shown in the column “9-A” of FIG. 7 and FIG. 9A, the reflective layer 3 may be provided between the thin film transistor layer 5 and the substrate S1 as in FIG. 8C.

  Further, as shown in FIG. 7 “9-B” column and FIG. 9B, the conductive color filter layer 11 of FIG. 8C may also serve as the pixel electrode.

  Further, as shown in FIG. 7 “9-C” column and FIG. 9C, a reflective substrate S11 may be used instead of the substrate S1. In this case, it is not necessary to use a highly reflective film for the interlayer insulating film T2 above the TFT.

  Further, as shown in FIG. 7 “10-A” column and FIG. 10A, a reflective substrate S11 may be used instead of the substrate S1. Also in this case, it is not necessary to use a highly reflective film for the interlayer insulating film T2 above the TFT.

  Further, as shown in the column “10-B” of FIG. 7 and FIG. 10B, the conductive color filter layer 11 of FIG. 10A may also serve as the pixel electrode.

  Further, as shown in the column “10-C” of FIG. 7 and FIG. 10C, the color filter layer 11 of FIG. In this case, if the insulating color filter layer 11 is used, the base insulating film 2 in FIG. 6 can be omitted. Of course, the base insulating film 2 may be provided. Further, by using the reflective substrate S11 instead of the substrate S1, the reflective layer 3 in FIG. 5 can be omitted. Further, as shown in FIG. 10C, the electrochromic material layer 13 may be formed over a plurality of pixel regions.

  7 to 10 may appropriately employ the method for forming each part described in the manufacturing methods of the first and second embodiments. For example, the reflective layer 3 can be formed using the above-described conductive or insulating material using an inkjet method or the like.

  As described above, the configuration described in the present embodiment and the manufacturing method thereof also achieve the effects described in the first or second embodiment.

  In addition, the Example and application example demonstrated through the said Embodiment 1-3 can be combined suitably according to a use, or can be used by adding a change or improvement, and this invention is a thing of embodiment mentioned above. It is not limited to the description. For example, in the first to third embodiments, the reflective display device has been described as an example. However, the reflective layer may be omitted, and the substrate S1 may be made of a transparent material to be a transmissive display device.

  In addition, the display device of the present invention can be used as a display unit of electronic equipment, electronic paper, or the like.

3 is a cross-sectional view illustrating a structure of a display device according to Embodiment 1. FIG. It is the elements on larger scale of FIG. FIG. 2 is a partial plan view of FIG. 1. It is a circuit diagram which shows typically an active matrix type display part. FIG. 6 is a cross-sectional view illustrating a configuration of a display device according to a second embodiment. It is the elements on larger scale of FIG. 10 is a diagram summarizing the stacked state of the constituent layers of the display device of Embodiment 3. FIG. It is a figure which shows sectional drawing of the display apparatus corresponding to the "8-A"-"8-C" column of FIG. It is a figure which shows sectional drawing of the display apparatus corresponding to the "9-A"-"9-C" column of FIG. It is a figure which shows sectional drawing of the display apparatus corresponding to the "10-A"-"10-C" column of FIG.

Explanation of symbols

  DESCRIPTION OF SYMBOLS 2 ... Base insulating film, 3 ... Reflective layer, 5 ... Thin film transistor layer, 7 ... Pixel electrode, 9 ... Partition, 11R ... Color filter layer, 11R ... Red filter, 11G ... Green filter, 11B ... Blue filter, 13 ... Electrochromic Material layer, 15 ... Electrolyte layer, 21 ... Counter electrode, A ... Pixel region, C ... Connection part, G ... Gate electrode, GI ... Gate insulating film, Gd ... Gate driver, GL ... Gate line, M ... Wiring, S ... Semiconductor layer, S1 ... substrate, S2 ... substrate, S11 ... reflective substrate, SD ... source / drain region, Sd ... source driver, SL ... source line, T1 ... TFT section, T2 ... interlayer insulating film

Claims (11)

A first substrate;
A second substrate;
A reflective layer positioned between the first substrate and the second substrate;
A color filter layer positioned between the reflective layer and the second substrate;
An electrochromic material layer positioned between the color filter layer and the second substrate;
An electrolyte layer located between the electrochromic material layer and the second substrate;
A counter electrode positioned between the electrolyte layer and the second substrate;
A display device comprising: a color filter layer and a partition wall which is located between the reflective layer and the electrolyte layer and is in contact with the electrochromic material layer. The display device according to claim 1,
A display device comprising a pixel electrode positioned between the reflective layer and the color filter layer. The display device according to claim 1,
A display device, wherein the reflective layer is a pixel electrode. The display device according to claim 1,
The display device, wherein the color filter layer has conductivity. The display device according to claim 1,
A display device comprising a pixel electrode positioned between the reflective layer and the color filter layer. The display device according to any one of claims 1 to 5,
A display device comprising a transistor positioned between the first substrate and the reflective layer, wherein the transistor overlaps the partition wall. The display device according to any one of claims 1 to 6,
The display device, wherein the partition wall surrounds the color filter layer and the electrochromic material layer. The display device according to claim 1,
The display device, wherein the electrochromic material layer is a material that develops a dark color by an oxidation-reduction reaction. A first substrate;
A second substrate;
A reflective layer positioned between the first substrate and the second substrate;
A plurality of color filter layers positioned between the reflective layer and the second substrate;
A plurality of electrochromic material layers positioned between the plurality of color filter layers and the second substrate;
An electrolyte layer positioned between the plurality of electrochromic material layers and the second substrate;
A counter electrode positioned between the electrolyte layer and the second substrate;
A partition wall located between the reflective layer and the electrolyte layer, and in contact with the plurality of color filter layers and the plurality of electrochromic material layers,
Each of the plurality of electrochromic material layers develops a dark color by an oxidation-reduction reaction, and the plurality of color filter layers include a plurality of colors. A first substrate;
A second substrate;
A plurality of reflective layers positioned between the first substrate and the second substrate;
A plurality of color filter layers positioned between the plurality of reflective layers and the second substrate;
A plurality of electrochromic material layers positioned between the plurality of color filter layers and the second substrate;
An electrolyte layer positioned between the plurality of electrochromic material layers and the second substrate;
A counter electrode positioned between the electrolyte layer and the second substrate;
A plurality of color filter layers located between the plurality of reflective layers and the electrolyte layer, and a partition contacting each of the plurality of electrochromic material layers,
Each of the plurality of electrochromic material layers develops a dark color by an oxidation-reduction reaction, and the plurality of color filter layers include a plurality of colors. The display device according to any one of claims 1 to 10,
The display device, wherein the partition includes a light shielding material.

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