JP5082293B2 - Inductance component and manufacturing method thereof - Google Patents

Description

  The present invention relates to an inductance component used in, for example, a power supply circuit of a mobile phone.

  Conventionally, as shown in FIG. 100, this type of inductance component has a coil 2 formed in a sheet-like element 1, a terminal 3 is electrically connected to the coil 2, and a coil 2 in the element 1 The inductance value was improved by forming the magnetic outer leg portion 4 in the outer circumferential direction.

As prior art document information relating to this application, for example, Patent Document 1 is known.
JP 2003-257744 A

  Such a conventional inductance component has a limit in improving the inductance value.

  That is, in the above-described conventional configuration, the area of the inductance component itself is limited, and it is necessary to secure an occupied area of the coil 2 formed in the element body 1. There is a limit to the cross-sectional area of the magnetic outer leg 4 provided in the outer circumferential direction. As a result, there is a limit to the improvement of the inductance value.

  Accordingly, an object of the present invention is to improve the inductance value of an inductance component having a terminal.

In order to achieve this object, the present invention includes an element body formed of a photoresist, a coil formed in the element body, and a terminal electrically connected to the coil, and is in contact with the terminal. Thus, the inductance component is formed of a magnetic material made of iron or an iron alloy that is electrically connected and contains any one of Fe, FeNi, FeNiCo, and FeCo .

  In the inductance component of the present invention, since at least a part of the terminal is made of a magnetic material, the magnetic permeability can be increased, and as a result, the inductance value can be improved.

  Furthermore, since the magnetic material is provided within the area originally occupied as the terminal, it is not necessary to increase the area of the inductance component itself or reduce the area occupied by the coil.

(Embodiment 1)
The inductance component according to Embodiment 1 of the present invention will be described below with reference to the drawings.

  In FIG. 1, a coil 6 is formed in a sheet-like element body 5, terminals 7 and 8 are formed on the outermost periphery of the coil 6, and vias are formed between the planar coils 6 </ b> A and 6 </ b> B constituting the coil 6. 9 is formed in the element body 5.

  A part of the terminals 7 and 8 is constituted by magnetic terminals 7A and 8A made of a magnetic material.

  Here, as a material of the magnetic terminals 7A and 8A, it is preferable to use a metal magnetic material having a composition made of iron or an iron alloy from the viewpoint of magnetic flux density and magnetic loss. When an iron alloy is used for the magnetic terminals 7A and 8A, the composition ratio of iron is preferably 30% by mass or more. This is because the magnetic characteristics of high saturation magnetic flux density and low coercive force can be realized by setting the content of iron contained in the magnetic terminals 7A and 8A to 30% by mass or more. Further, it is desirable that the nickel content is close to 80%, so that a high magnetic permeability can be obtained and a large inductance value can be obtained.

  Moreover, as an iron alloy used for the magnetic terminals 7A and 8A, it is more preferable to use a metal magnetic material having a composition containing any one of FeNi, FeNiCo, and FeCo from the viewpoint of high magnetic flux density and low magnetic loss. preferable.

  For the production of the magnetic terminals 7A and 8A, for example, an electroplating method can be used.

  At this time, the plating bath used in the electroplating step contains Fe ions or other metal ions.

  In addition, it is preferable to add a stress relaxation agent, a pit inhibitor, and a complexing agent as various additives for the plating bath. Examples of the stress relaxation agent include saccharin. Since saccharin is a substance containing a sulfonate, it can exert its effect. By including such a stress relaxation agent, even if the magnetic terminals 7A and 8A are formed thick, cracks do not occur, and the magnetic terminals 7A and 8A having excellent uniformity can be formed. For example, when saccharin is used as a stress relaxation agent, the effect can be seen by adding 0.1 to 5 g / L in the plating bath, but the stress relaxation action is exhibited depending on plating conditions such as current density. The amount to be changed can be controlled by appropriately setting conditions.

  In addition, as a complexing agent, in order to stabilize various metal ions, organic ions and inorganic molecules such as amino acids, monocarboxylic acids, dicarboxylic acids, and tricarboxylic acids are included to form stable complexes with metal ions. Can be formed.

  An iron alloy film is formed by electrolytic plating using such a plating bath, but iron with excellent magnetic properties can be obtained by using a plating apparatus with the anode separated or by plating in a magnetic field. An alloy film can be formed.

  Here, the coil 6 may be a single layer, but in the present embodiment, it is constituted by two layers of planar coils 6A and 6B. The upper layer planar coil 6A is spirally wound from the terminal 7 in the inner circumferential direction, and the innermost circumferential part of the planar coil 6A and the innermost circumferential part of the lower planar coil 6B are connected by vias 9. 6B is wound in a spiral shape in the direction toward the terminal 8 (peripheral direction) to constitute the coil 6.

  Here, the planar coils 6A and 6B are preferably wound in the same direction. This is for realizing a large inductance value without canceling out the magnetic flux generated in the planar coil 6A and the magnetic flux generated in the planar coil 6B.

  Thus, since at least a part of the terminals 7 and 8 are formed by the magnetic terminals 7A and 8A, the magnetic permeability can be increased, and as a result, the inductance value can be improved.

  Further, since the magnetic terminals 7A and 8A are provided within the area originally occupied as the terminals 7 and 8, there is no need to increase the area of the inductance component itself or reduce the area occupied by the coil 6.

  A higher inductance value can be obtained by forming the magnetic middle leg portion 10 made of a magnetic material in the inner circumferential direction of the coil 6 in the element body 5.

  Furthermore, as shown in FIG. 2, a higher inductance value can be obtained by forming the magnetic outer leg portion 11 made of a magnetic material in the outer peripheral direction of the coil 6 in the element body 5.

  The coil 6 may be a single layer, but a larger inductance value can be realized by adopting a structure in which two or more planar coils 6A and 6B are laminated as shown in FIG. 1 of the present embodiment. desirable.

  The coil 6 may have a circular cross section instead of a square, but the square can have a larger coil cross sectional area. As a result, copper loss can be reduced, which is desirable.

  It is desirable that the planar coils 6A and 6B have a thickness of 10 μm or more because it can cope with a large current.

  Next, a method for manufacturing the inductance component will be described.

  First, as shown in FIG. 3, a substrate 12 such as silicon is prepared.

  Next, as shown in FIG. 4, an insulating layer 13 is formed on the substrate 12 with a photoresist. By using a photoresist, it is possible to form a thin insulating layer 13 having excellent planar uniformity and having a thickness of about 10 μm to 20 μm.

  Thereafter, as shown in FIG. 5, the entire upper surface of the insulating layer 13 is exposed.

  Next, as shown in FIG. 6, the insulating layer 14 is formed on the entire top surface of the insulating layer 13 with a photoresist. By using a photoresist, it is possible to form a thin insulating layer 14 having excellent planar uniformity and having a thickness of about 10 μm to 20 μm.

  Thereafter, as shown in FIG. 7, the upper surface of the element body forming portion 14 </ b> C excluding the magnetic terminal forming portion 14 </ b> A and the magnetic middle leg forming portion 14 </ b> B in the insulating layer 14 is exposed. Here, the magnetic terminal forming portion 14 </ b> A is formed at the outer peripheral portion of the magnetic layer 14, and the magnetic middle leg forming portion 14 </ b> B is formed at a substantially central portion of the magnetic layer 14.

  Next, as shown in FIG. 8, the magnetic terminal forming portion 14A and the magnetic middle leg forming portion 14B shown in FIG. 7 are removed by development.

  Thereafter, as shown in FIG. 9, a base electrode layer (not shown) is formed on the entire exposed surface of the insulating layer 13 and the element body forming portion 14C by electroless plating or the like, and this base electrode layer (not shown) is formed. The magnetic body 15 is formed by electroplating as a power feeding layer.

  When the magnetic body 15 is formed by sputtering, a base electrode layer (not shown) is not necessary. However, when the electroplating method is used, the magnetic body 15 can be uniformly formed regardless of the shape of the exposed surface of the insulating layer 13 and the element body forming portion 14C, which are the objects to be formed, and the film forming speed can be increased. There is a merit that it is fast.

  Next, as shown in FIG. 10, the magnetic body 15 shown in FIG. 9 is polished from above to expose the element forming portion 14C on the upper surface. At this time, the magnetic body 15 enters the portions corresponding to the magnetic terminal forming portion 14A and the magnetic middle leg forming portion 14B shown in FIG. 7, and the magnetic body 15 entering the magnetic terminal forming portion 14A The magnetic terminals 7A and 8A shown in FIG. As this polishing method, a flat element forming portion 14C can be formed by using cutting or CMP.

  Thereafter, as shown in FIG. 11, the insulating layer 16 is formed of photoresist on the entire upper surfaces of the magnetic terminals 7A and 8A, the magnetic body 15, and the element body forming portion 14C. By using a photoresist, it is possible to form a thin insulating layer 16 having excellent planar uniformity and having a thickness of about 10 μm to 20 μm.

  Next, as shown in FIG. 12, the upper surface of the element body forming portion 16D in the insulating layer 16 excluding the terminal forming portion 16A, the coil forming portion 16B, and the magnetic middle leg forming portion 16C is exposed.

  Thereafter, as shown in FIG. 13, the terminal forming portion 16A, the coil forming portion 16B, and the magnetic middle leg forming portion 16C shown in FIG. 12 are removed by development.

  Next, as shown in FIG. 14, a base electrode layer (not shown) is formed on the entire exposed surfaces of the element body forming portions 14C and 16D, the magnetic body 15, and the magnetic terminals 7A and 8A by electroless plating or the like, The conductor 17 is formed by electroplating using this base electrode layer (not shown) as a power feeding layer.

  When the conductor 17 is formed by sputtering, a base electrode layer (not shown) is not necessary. However, when the electroplating method is used, the conductor 17 can be formed uniformly regardless of the shape of the exposed surfaces of the element forming portions 14C and 16D, the magnetic body 15, and the magnetic terminals 7A and 8A, which are formed bodies. There is an advantage that the film forming speed is high.

  Thereafter, as shown in FIG. 15, the conductor 17 shown in FIG. 14 is polished from above to expose the element body forming portion 16D on the upper surface. At this time, the conductor 17 enters the portion corresponding to the terminal forming portion 16A, the coil forming portion 16B, and the magnetic middle leg forming portion 16C shown in FIG. 12, and the conductor 17 entering the terminal forming portion 16A is shown in FIG. 1 and part of the terminals 7 and 8 and the conductor 17 that has entered the coil forming portion 16B become the planar coil 6B shown in FIG. As this polishing method, a flat element forming portion 16D can be formed by using cutting or CMP.

  Next, as shown in FIG. 16, an insulating layer 18 is formed of photoresist on the entire upper surfaces of the terminals 7 and 8, the planar coil 6B, the conductor 17, and the element body forming portion 16D. By using a photoresist, it is possible to form a thin insulating layer 18 having excellent planar uniformity and having a thickness of about 10 μm to 20 μm.

  Thereafter, as shown in FIG. 17, the upper surface of the element body forming portion 18 </ b> D excluding the terminal forming portion 18 </ b> A, the magnetic middle leg forming portion 18 </ b> B, and the magnetic via forming portion 18 </ b> C in the insulating layer 18 is exposed.

  Next, as shown in FIG. 18, the terminal forming portion 18A, the magnetic middle leg forming portion 18B, and the magnetic via forming portion 18C shown in FIG. 17 are removed by development.

  After that, as shown in FIG. 19, after forming an underlayer (not shown) by electroless plating or the like on the exposed surfaces of the terminals 7 and 8, the element body forming portion 18D, and the conductor 17 shown in FIG. Thus, the conductor 19 is formed.

  When the conductor 19 is formed by sputtering, a base electrode layer (not shown) is not necessary. However, when the electroplating method is used, the conductor 19 can be formed uniformly regardless of the shape of the exposed surfaces of the terminals 7 and 8, the element body forming portion 18 </ b> D, and the conductor 17 that are the objects to be formed. There is an advantage that the film speed is fast.

  Next, as shown in FIG. 20, the conductor 19 shown in FIG. 19 is polished from above to expose the element body forming portion 18D on the upper surface. At this time, the conductor 19 entering the portion corresponding to the terminal forming portion 18A shown in FIG. 17 becomes a part of the terminals 7 and 8 shown in FIG. 1, and the conductor 19 entering the portion corresponding to the magnetic via forming portion 18C. Is the via 9 shown in FIG.

  Thereafter, as shown in FIG. 21, an insulating layer 20 is formed of photoresist on the entire upper surfaces of the terminals 7 and 8, the element body forming portion 18 </ b> D, and the conductor 19. By using a photoresist, it is possible to form a thin insulating layer 20 having excellent planar uniformity and having a thickness of about 10 μm to 20 μm.

  Next, as shown in FIG. 22, the upper surface of the element body forming portion 20C excluding the terminal forming portion 20A and the coil forming portion 20B in the insulating layer 20 is exposed.

  Next, as shown in FIG. 23, the terminal forming portion 20A and the coil forming portion 20B shown in FIG. 22 are removed by development.

  Then, as shown in FIG. 24, after forming a base layer (not shown) by electroless plating or the like on the exposed surfaces of the element body forming portions 18D and 20C, the terminals 7 and 8, and the conductor 19 shown in FIG. The conductor 21 is formed by electroplating.

  Note that when the conductor 21 is formed by sputtering, a base electrode layer (not shown) is not required. However, when the electroplating method is used, the conductor 21 can be formed uniformly regardless of the shape of the exposed surface of the element body forming portions 18D and 20C, the terminals 7 and 8 and the conductor 19 that are formed bodies, In addition, there is an advantage that the film forming speed is high.

  Next, as shown in FIG. 25, the conductor 21 shown in FIG. 24 is polished from above to expose the element body forming portion 20C on the upper surface. At this time, the conductor 21 enters the portion corresponding to the terminal forming portion 20A and the coil forming portion 20B shown in FIG. 22, and the conductor 21 entering the terminal forming portion 20A corresponds to the terminals 7 and 8 shown in FIG. The conductor 21 that has become a part and enters the coil forming portion 20B becomes the planar coil 6A shown in FIG. As this polishing method, a flat element forming portion 20C can be formed by using cutting or CMP.

  Thereafter, as shown in FIG. 26, the insulating layer 22 is formed of photoresist on the entire upper surfaces of the terminals 7 and 8, the planar coil 6A, the conductor 21, and the element body forming portion 20C. By using a photoresist, it is possible to form a thin insulating layer 22 having excellent planar uniformity and having a thickness of about 10 μm to 20 μm.

  Next, as shown in FIG. 27, the upper surface of the element body forming portion 22C excluding the terminal forming portion 22A and the magnetic middle leg forming portion 22B in the insulating layer 22 is exposed.

  Thereafter, as shown in FIG. 28, the terminal forming portion 22A and the magnetic middle leg forming portion 22B shown in FIG. 27 are removed by development.

  Next, as shown in FIG. 29, an underlying layer (not shown) is formed by electroless plating or the like on the exposed surfaces of the element body forming portion 22C, the terminals 7, 8 and the conductor 21 shown in FIG. The magnetic body 23 is formed by plating.

  When the magnetic body 23 is formed by sputtering, a base electrode layer (not shown) is not necessary. However, when the electroplating method is used, the magnetic body 23 can be uniformly formed regardless of the shape of the exposed surface of the element body forming portion 22C, the terminals 7, 8 and the conductor 21, which is the object to be formed, and There is an advantage that the film forming speed is fast.

  Thereafter, as shown in FIG. 30, the magnetic body 23 shown in FIG. 29 is polished from above to expose the element body forming portion 22C on the upper surface. At this time, the magnetic body 23 enters the portion corresponding to the terminal forming portion 22A and the magnetic middle leg portion forming portion 22B shown in FIG. 27, and the magnetic body 23 entering the terminal forming portion 22A is shown in FIG. It becomes a part of the magnetic terminals 7A and 8A. As this polishing method, a flat element forming portion 22C can be formed by using cutting or CMP.

  Next, as shown in FIG. 31, an insulating layer 24 is formed on the entire upper surfaces of the terminals 7 and 8, the element body forming portion 22 </ b> C, and the magnetic body 23 using a photoresist. By using a photoresist, it is possible to form a thin insulating layer 24 having excellent planar uniformity and having a thickness of about 10 μm to 20 μm.

  Thereafter, as shown in FIG. 32, the upper surface of the element body forming portion 24B excluding the magnetic middle leg forming portion 24A in the insulating layer 24 is exposed.

  Next, as shown in FIG. 33, the magnetic middle leg portion forming portion 24A shown in FIG. 32 is removed by development.

  Thereafter, as shown in FIG. 34, the magnetic bodies 15 and 23 and the conductors 17, 19, and 21 shown in FIG. 33 are removed by etching to form a hole 10A.

  Next, as shown in FIG. 35, the hole 10 </ b> A shown in FIG. 34 is filled with the magnetic middle leg portion 10.

  Here, the magnetic middle leg 10 is composed of at least a mixture of magnetic powder and resin. As the magnetic powder, ferrite powder or metal magnetic powder mainly composed of Fe, Ni, or Co can be used.

  Specifically, MnZn ferrite powder, NiZn ferrite powder, MgZn ferrite powder, hexagonal ferrite powder, garnet type ferrite powder, Fe powder, Fe-Si alloy powder, Fe-Si-Al alloy powder, Fe-Ni alloy In principle, any magnetic powder having soft magnetic properties, such as alloy powder, Fe-Co alloy powder, Fe-Mo-Ni alloy powder, Fe-Cr-Si alloy powder, Fe-Si-B alloy powder, etc. In particular, it is more preferable to use a magnetic powder having a high saturation magnetic flux density such as an Fe—Ni alloy powder, an Fe—Co alloy powder, or an Fe—Mo—Ni alloy powder.

  When a metal magnetic powder is used as the magnetic powder, the particle diameter is preferably 0.5 μm or more and 100 μm or less, more preferably 2 μm or more and 30 μm or less. If the particle size is too large, eddy current loss at high frequencies will increase, and conversely, if the particle size is too small, the amount of resin required will increase and the permeability will decrease. It is.

  The resin used for the magnetic middle leg 10 can be used as long as it has a binding property, but from the viewpoint of strength after binding and heat resistance during use, an epoxy resin, a phenol resin, a silicone resin, It is desirable to use a thermosetting resin such as a polyimide resin. Further, in order to improve the dispersibility with the magnetic powder and the resin performance, a small amount of a dispersant, a plasticizer, or the like may be added. Furthermore, it is desirable to add a third component in order to adjust the viscosity of the paste before curing, or to improve the insulation when using a metal magnetic powder. Examples of such a third component include silane coupling materials, titanium coupling materials, titanium alkoxides, water, glass, boron nitride, talc, mica, barium sulfate, and tetrafluoroethylene.

  Thereafter, as shown in FIG. 36, the insulating layer 25 is formed of photoresist on the entire upper surface of the magnetic middle leg portion 10 and the element body forming portion 24B. By using a photoresist, it is possible to form a thin insulating layer 25 having excellent planar uniformity and having a thickness of about 10 μm to 20 μm.

  Next, as shown in FIG. 37, only the upper surface of the magnetic middle leg 10 in the insulating layer 25 is exposed.

  Thereafter, as shown in FIG. 38, the insulating layer 25 formed on the upper surface of the element body forming portion 24B is removed by development.

  Next, as shown in FIG. 39, the substrate 12 is removed by hydrofluoric acid treatment or the like.

  In this way, it is possible to manufacture an inductance component having a high inductance value in which a part of the terminals 7 and 8 is constituted by the magnetic terminals 7A and 8A.

(Embodiment 2)
Hereinafter, an inductance component according to Embodiment 2 of the present invention will be described with reference to the drawings.

  In FIG. 40, a coil 27 is formed in a sheet-like element body 26, terminals 28 and 29 are formed on the outermost periphery of the coil 27, and vias are formed between the planar coils 27A and 27B constituting the coil 27. 27C is formed in the element body 26.

  In addition, magnetic layers 30A and 30B and magnetic layers 30C and 30D are formed above and below the coil 27 in the element body 26, respectively.

  A part of the terminals 28 and 29 is formed by magnetic terminals 28A and 29A made of a magnetic material.

  Further, in the present embodiment, the magnetic terminals 28A and 29A in the terminals 28 and 29 are also formed on the upper and lower surfaces of the element body 26.

  A magnetic middle leg portion 31 made of a magnetic material is formed in the inner circumferential direction of the coil 27 in the element body 26.

  Here, the coil 27 may be a single layer, but in the present embodiment, it is constituted by two layers of planar coils 27A and 27B. The upper layer planar coil 27A is spirally wound from the terminal 28 in the inner circumferential direction, and the innermost circumferential portion of the planar coil 27A and the innermost circumferential portion of the lower planar coil 27B are connected by a via 27C. 27B is wound in a spiral shape in the direction toward the terminal 29 (peripheral direction) to constitute the coil 27.

  Here, the planar coils 27A and 27B are preferably wound in the same direction. This is because the magnetic flux generated by the planar coil 27A and the magnetic flux generated by the planar coil 27B are not canceled out and a large inductance value can be realized.

  Thus, since at least a part of the terminals 28 and 29 are constituted by the magnetic terminals 28A and 29A, the magnetic permeability can be increased, and as a result, the inductance value can be improved.

  Further, by arranging the magnetic terminals 28A, 29A and the magnetic layers 30A, 30B, 30C, 30D above and below the coil 27, the magnetic flux released from the magnetic middle legs 31 is again magnetic middle legs 31. Since most of the path until the incident light can be made up of only the material, the inductance value can be further improved.

  Further, since the magnetic layers 28A and 29A are provided within the area originally occupied as the terminals 28 and 29, it is not necessary to increase the area of the inductance component itself or reduce the area occupied by the coil 27.

  Furthermore, a higher inductance value can be obtained by forming magnetic outer legs (not shown) made of a magnetic material in the outer peripheral direction of the coil 27 in the element body 26.

  The coil 27 may be a single layer, but a larger inductance value can be realized by forming a structure in which two or more plane coils 27A and 27B are laminated as shown in FIG. 40 of the present embodiment. desirable.

  The cross section of the coil 27 may be circular instead of square, but the rectangular is more preferable because the coil cross sectional area can be increased and, as a result, copper loss can be reduced.

  It is desirable that the planar coils 27A and 27B have a thickness of 10 μm or more because it can cope with a large current.

  Next, a method for manufacturing the inductance component will be described.

  First, as shown in FIG. 41, a substrate 32 such as silicon is prepared.

  Next, as shown in FIG. 42, an insulating layer 33 is formed on the substrate 32 with a photoresist.

  Thereafter, as shown in FIG. 43, the upper surface of the element body forming portion 33B in the insulating layer 33 excluding the magnetic terminal forming portion 33A is exposed. Here, the magnetic terminal forming portion 33A is formed with a distance inward from the outermost peripheral portion of the insulating layer 33.

  Next, as shown in FIG. 44, the magnetic terminal forming portion 33A shown in FIG. 43 is removed by development.

  Thereafter, as shown in FIG. 45, a base electrode layer (not shown) is formed on the entire exposed surface of the substrate 32 and the element body forming portion 33B by electroless plating or the like, and the base electrode layer (not shown) is fed. The magnetic body 34 is formed by electroplating as a layer.

  When the magnetic body 34 is formed by sputtering, a base electrode layer (not shown) is not necessary. However, when the electroplating method is used, the magnetic body 34 can be formed uniformly and the film forming speed is high regardless of the exposed surface shape of the substrate 32 and the element body forming portion 33B, which are the objects to be formed. There is a merit such as.

  Next, as shown in FIG. 46, the magnetic body 34 shown in FIG. 45 is polished from above to expose the element body forming portion 33B on the upper surface. At this time, the magnetic body 34 enters the portion corresponding to the magnetic terminal forming portion 33A shown in FIG. 43, and this becomes a part of the magnetic terminals 28A and 29A shown in FIG. As this polishing method, a flat element forming portion 33B can be formed by using cutting or CMP.

  Thereafter, as shown in FIG. 47, an insulating layer 35 is formed of photoresist on the entire upper surfaces of the magnetic terminals 28A and 29A and the element body forming portion 33B. By using a photoresist, it is possible to form a thin insulating layer 35 having excellent planar uniformity and having a thickness of about 10 μm to 20 μm.

  Next, as shown in FIG. 48, the upper surface of the element body forming portion 35B in the insulating layer 35 excluding the terminal forming portion 35A is exposed.

  Thereafter, as shown in FIG. 49, an insulating layer 36 is formed of photoresist on the entire upper surface of the terminal forming portion 35A and the element body forming portion 35B. By using a photoresist, it is possible to form a thin insulating layer 36 having excellent planar uniformity and having a thickness of about 10 μm to 20 μm.

  Next, as shown in FIG. 50, the upper surface of the element body forming portion 36C excluding the terminal forming portion 36A and the magnetic layer forming portion 36B in the insulating layer 36 is exposed.

  Thereafter, as shown in FIG. 51, the terminal forming portions 35A and 36A and the magnetic layer forming portion 36B shown in FIG. 50 are removed by development.

  Next, as shown in FIG. 52, a base electrode layer (not shown) is formed on the entire exposed surfaces of the element body forming portions 35B and 36C and the magnetic terminals 28A and 29A shown in FIG. 51 by electroless plating or the like. Then, the magnetic body 56 is formed by electroplating using the base electrode layer (not shown) as a power feeding layer, and the magnetic body 56 is polished from above to expose the element body forming portion 36C on the upper surface. At this time, the magnetic body 56 has entered the portions corresponding to the terminal forming portions 35A and 36A and the magnetic layer forming portion 36B shown in FIG. 50, and the magnetic body 56 that has entered the terminal forming portions 35A and 36A is shown in FIG. A part of the magnetic terminals 28A and 29A and the magnetic body 56 that has entered the magnetic layer forming part 36B become the magnetic layer 30D shown in FIG. As a polishing method, a flat element forming part 36C can be formed by using cutting or CMP.

  When the magnetic body 56 is formed by sputtering, a base electrode layer (not shown) is not necessary. However, when the electroplating method is used, the magnetic body 56 can be uniformly formed regardless of the shape of the exposed surface of the body forming portions 35B and 36C and the magnetic terminals 28A and 29A, which are formed bodies, In addition, it is desirable because the film forming speed is high.

  Thereafter, as shown in FIG. 53, an insulating layer 37 is formed of photoresist on the entire upper surface of the magnetic layer 30D, the element body forming portion 36C, and the magnetic terminals 28A and 29A. By using a photoresist, it is possible to form a thin insulating layer 37 having excellent planar uniformity and having a thickness of about 10 μm to 20 μm.

  Next, as shown in FIG. 54, the upper surface of the element body forming portion 37B in the insulating layer 37 excluding the terminal forming portion 37A is exposed.

  Thereafter, as shown in FIG. 55, an insulating layer 38 is formed of photoresist on the entire upper surface of the terminal forming portion 37A and the element forming portion 37B. By using a photoresist, it is possible to form a thin insulating layer 38 having excellent planar uniformity and having a thickness of about 10 μm to 20 μm.

  Next, as shown in FIG. 56, the upper surface of the element body forming portion 38C excluding the terminal forming portion 38A and the magnetic layer forming portion 38B in the insulating layer 38 is exposed.

  Thereafter, as shown in FIG. 57, the terminal forming portions 37A and 38A and the magnetic layer forming portion 38B shown in FIG. 56 are removed by development.

  Next, as shown in FIG. 58, a base electrode layer (not shown) is formed on the entire exposed surfaces of the element body forming portions 37B and 38C and the magnetic terminals 28A and 29A shown in FIG. 57 by electroless plating or the like. Then, the magnetic body 57 is formed by electroplating using the base electrode layer (not shown) as a power feeding layer, and the magnetic body 57 is polished from above to expose the element body forming portion 38C on the upper surface. At this time, the magnetic body 57 has entered the portions corresponding to the terminal forming portions 37A and 38A and the magnetic layer forming portion 38B shown in FIG. 56, and the magnetic body 57 that has entered the terminal forming portions 37A and 38A is shown in FIG. A part of the magnetic terminals 28A and 29A shown in FIG. 40 and the magnetic body 57 that has entered the magnetic layer forming part 38B become the magnetic layer 30C shown in FIG. As a polishing method, a flat element forming portion 38C can be formed by using cutting or CMP.

  When the magnetic body 57 is formed by sputtering, a base electrode layer (not shown) is not necessary. However, when the electroplating method is used, the magnetic body 57 can be uniformly formed regardless of the shape of the exposed surface of the element body forming portions 37B and 38C and the magnetic body terminals 28A and 29A, In addition, there is an advantage that the film forming speed is high.

  Thereafter, as shown in FIG. 59, an insulating layer 39 is formed of a photoresist on the entire upper surfaces of the magnetic terminals 28A and 29A, the element forming portion 38C, and the magnetic layer 30C. By using a photoresist, it is possible to form a thin insulating layer 39 having excellent planar uniformity and a thickness of about 10 μm to 20 μm.

  Next, as shown in FIG. 60, the upper surface of the element body forming portion 39B in the insulating layer 39 excluding the terminal forming portion 39A is exposed.

  Thereafter, as shown in FIG. 61, the insulating layer 40 is formed of photoresist on the entire upper surface of the terminal forming portion 39A and the element forming portion 39B. By using a photoresist, it is possible to form a thin insulating layer 40 having excellent planar uniformity and having a thickness of about 10 μm to 20 μm.

  Next, as shown in FIG. 62, the upper surface of the element body forming portion 40D in the insulating layer 40 excluding the terminal forming portion 40A, the coil forming portion 40B, and the middle leg forming portion 40C is exposed.

  Thereafter, as shown in FIG. 63, the terminal forming portion 40A, the coil forming portion 40B, and the middle leg forming portion 40C shown in FIG. 62 are removed by development.

  Next, as shown in FIG. 64, after forming a base layer (not shown) by electroless plating or the like on the exposed surfaces of the element body forming portions 39B and 40D and the magnetic terminals 28A and 29A shown in FIG. The conductor 41 is formed by electroplating.

  When the conductor 41 is formed by sputtering, a base electrode layer (not shown) is not necessary. However, when the electroplating method is used, the conductor 41 can be uniformly formed regardless of the shape of the exposed surface of the body forming portions 39B and 40D and the magnetic terminals 28A and 29A, which are formed bodies, and There is an advantage that the film forming speed is fast.

  Next, as shown in FIG. 65, the conductor 41 shown in FIG. 64 is polished from above to expose the element body forming portion 40D on the upper surface. At this time, the conductor 41 enters the portion corresponding to the terminal forming portion 40A, the coil forming portion 40B, and the middle leg forming portion 40C shown in FIG. 62, and the conductor 41 entering the terminal forming portion 40A is shown in FIG. The conductor 41 which becomes a part of the terminals 28 and 29 shown in FIG. 40 and enters the coil forming portion 40B becomes the planar coil 27B shown in FIG. As a polishing method, a flat element forming portion 40D can be formed by using cutting or CMP.

  Thereafter, as shown in FIG. 66, the insulating layer 42 is formed of photoresist on the entire upper surfaces of the terminals 28 and 29, the planar coil 27B, the conductor 41, and the element body forming portion 40D shown in FIG.

  Next, as shown in FIG. 67, the entire upper surface of the element body forming portion 42D in the insulating layer 42 excluding the terminal forming portion 42A, the middle leg forming portion 42B, and the via forming portion 42C is exposed.

  Thereafter, as shown in FIG. 68, the terminal forming part 42A, the middle leg forming part 42B, and the via forming part 42C shown in FIG. 67 are removed by development.

  Next, as shown in FIG. 69, a base layer (not shown) is formed on the exposed surfaces of the terminals 28 and 29, the element body forming portion 42D, the planar coil 27B, and the conductor 41 shown in FIG. 68 by electroless plating or the like. After that, the conductor 43 is formed by electroplating.

  When the conductor 43 is formed by sputtering, a base electrode layer (not shown) is not necessary. However, when the electroplating method is used, the conductors 43 can be uniformly formed regardless of the shape of the exposed surfaces of the terminals 28 and 29, the element body forming portion 42D, the planar coil 27B, and the conductor 41, which are formed bodies. There is an advantage that the film forming speed is high.

  Next, as shown in FIG. 70, the conductor 43 shown in FIG. 69 is polished from above to expose the element body forming portion 42D on the upper surface. At this time, the conductor 43 entering the portion corresponding to the terminal forming portion 42A shown in FIG. 67 becomes a part of the terminals 28 and 29 shown in FIG. 40, and the conductor 43 entering the portion corresponding to the magnetic via forming portion 42C. Becomes the via 27C shown in FIG.

  Thereafter, as shown in FIG. 71, an insulating layer 44 is formed of photoresist on the entire upper surfaces of the terminals 28 and 29, the via 27C, the conductor 43, and the element body forming portion 42D. By using a photoresist, it is possible to form a thin insulating layer 44 having excellent planar uniformity and having a thickness of about 10 μm to 20 μm.

  Next, as shown in FIG. 72, the entire upper surface of the element body forming portion 44D of the insulating layer 44 excluding the terminal forming portion 44A, the coil forming portion 44B, and the middle leg forming portion 44C is exposed.

  Thereafter, as shown in FIG. 73, the terminal forming portion 44A, the coil forming portion 44B, and the middle leg forming portion 44C shown in FIG. 72 are removed by development.

  Next, as shown in FIG. 74, a base layer (not shown) was formed by electroless plating or the like on the exposed surfaces of the terminals 28 and 29, the element body forming portion 44D, the via 27C, and the conductor 43 shown in FIG. Thereafter, the conductor 45 is formed by electroplating.

  If the conductor 45 is formed by sputtering, a base electrode layer (not shown) is not necessary. However, when the electroplating method is used, the conductor 45 can be formed uniformly regardless of the shape of the exposed surfaces of the terminals 28 and 29, the element body forming portion 44D, the via 27C, and the conductor 43, which are formed bodies. Moreover, there is an advantage that the film forming speed is high.

  Thereafter, as shown in FIG. 75, the conductor 45 shown in FIG. 74 is polished from above to expose the element body forming portion 44D on the upper surface. At this time, the conductor 45 entering the portion corresponding to the terminal forming portion 44A shown in FIG. 72 becomes a part of the terminals 28 and 29 shown in FIG. 40, and the conductor 45 entering the portion corresponding to the coil forming portion 44B is changed. The planar coil 27A shown in FIG. 40 is obtained. As a polishing method, a flat element forming portion 44D can be formed by using cutting or CMP.

  Next, as shown in FIG. 76, a mask 46 is formed. The mask 46 is formed so as to cover the planar coil 27A to the terminals 28 and 29, and is not formed in a portion corresponding to the middle leg forming portion 44C shown in FIG.

  Here, for the mask 46, for example, a masking tape, a metal mask, a peeling resist or the like is used.

  Thereafter, as shown in FIG. 77, the conductors 41, 43, and 45 that have entered the middle leg forming portion are removed by etching to form a hole 31A.

  Next, as shown in FIG. 78, the holes 31 </ b> A shown in FIG. 77 are filled with the magnetic middle legs 31.

  Here, the magnetic middle leg 31 is composed of at least a mixture of magnetic powder and resin. As the magnetic powder, ferrite powder or metal magnetic powder mainly composed of Fe, Ni, or Co can be used.

  Specifically, MnZn ferrite powder, NiZn ferrite powder, MgZn ferrite powder, hexagonal ferrite powder, garnet type ferrite powder, Fe powder, Fe-Si alloy powder, Fe-Si-Al alloy powder, Fe-Ni alloy In principle, any magnetic powder having soft magnetic properties, such as alloy powder, Fe-Co alloy powder, Fe-Mo-Ni alloy powder, Fe-Cr-Si alloy powder, Fe-Si-B alloy powder, etc. In particular, it is more preferable to use a magnetic powder having a high saturation magnetic flux density such as an Fe—Ni alloy powder, an Fe—Co alloy powder, or an Fe—Mo—Ni alloy powder.

  When a metal magnetic powder is used as the magnetic powder, the particle diameter is preferably 0.5 μm or more and 100 μm or less, more preferably 2 μm or more and 30 μm or less. If the particle size is too large, eddy current loss at high frequencies will increase, and conversely, if the particle size is too small, the amount of resin required will increase and the permeability will decrease. It is.

  As the resin used for the magnetic middle leg portion 31, any resin having a binding property can be used, but from the viewpoint of strength after binding and heat resistance during use, an epoxy resin, a phenol resin, a silicone resin, It is desirable to use a thermosetting resin such as a polyimide resin. Further, in order to improve the dispersibility with the magnetic powder and the resin performance, a small amount of a dispersant, a plasticizer, or the like may be added. Furthermore, it is desirable to add a third component in order to adjust the viscosity of the paste before curing, or to improve the insulation when using a metal magnetic powder. Examples of such a third component include silane coupling materials, titanium coupling materials, titanium alkoxides, water, glass, boron nitride, talc, mica, barium sulfate, and tetrafluoroethylene.

  Thereafter, as shown in FIG. 79, the mask 46 is removed. When a stripping resist is used for the mask 46, it can be removed by dipping in an organic acid or alkali resist stripping solution or by ashing with oxygen plasma.

  Next, as shown in FIG. 80, an insulator layer 47 is formed of photoresist on the entire upper surfaces of the terminals 28 and 29, the planar coil 27A, the element body forming portion 44D, and the magnetic middle leg portion 31.

  Thereafter, as shown in FIG. 81, the entire upper surface of the element body forming portion 47B in the insulator layer 47 excluding the terminal forming portion 47A is exposed.

  Next, as shown in FIG. 82, the insulating layer 48 is formed of a photoresist on the entire upper surface of the terminal forming portion 47A and the element forming portion 47B. By using a photoresist, it is possible to form a thin insulating layer 48 having excellent planar uniformity and having a thickness of about 10 μm to 20 μm.

  Thereafter, as shown in FIG. 83, the entire upper surface of the element body forming portion 48C excluding the terminal forming portion 48A and the magnetic layer forming portion 48B in the insulating layer 48 is exposed.

  Next, as shown in FIG. 84, the terminal forming portion 48A and the magnetic layer forming portion 48B shown in FIG. 83 are removed by development.

  Thereafter, as shown in FIG. 85, a base electrode layer (not shown) is formed on the entire exposed surface of the element body forming portions 47B and 48C and terminals 28 and 29 shown in FIG. A magnetic body 49 is formed by electroplating using an electrode layer (not shown) as a power feeding layer, and the magnetic body 49 is polished from above to expose the element body forming portion 48C on the upper surface. At this time, the magnetic body 49 has entered the portions corresponding to the terminal forming portions 47A and 48A and the magnetic layer forming portion 48B shown in FIG. 83, and the magnetic body 49 that has entered the terminal forming portions 47A and 48A is shown in FIG. A part of the magnetic terminals 28A and 29A shown in FIG. 40 and the magnetic body 49 that has entered the magnetic layer forming part 48B become the magnetic layer 30B shown in FIG. As a polishing method, a flat element forming portion 48C can be formed by using cutting or CMP.

  When the magnetic body 49 is formed by sputtering, a base electrode layer (not shown) is not necessary. However, when the electroplating method is used, the magnetic body 49 can be uniformly formed regardless of the shape of the exposed surface of the element body forming portions 47B and 48C and the terminals 28 and 29, which are formed bodies, and manufactured. There is an advantage that the film speed is fast.

  Next, as shown in FIG. 86, the insulating layer 50 is formed of photoresist on the entire upper surfaces of the element body forming portion 48C, the magnetic layer 30B, and the magnetic terminals 28A and 29A. By using a photoresist, it is possible to form a thin insulating layer 50 having excellent planar uniformity and having a thickness of about 10 μm to 20 μm.

  Thereafter, as shown in FIG. 87, the entire upper surface of the element body forming portion 50B except the terminal forming portion 50A in the insulating layer 50 is exposed.

  Next, as shown in FIG. 88, an insulating layer 51 is formed of a photoresist on the entire upper surface of the terminal forming portion 50A and the element body forming portion 50B. By using a photoresist, it is possible to form a thin insulating layer 51 having excellent planar uniformity and having a thickness of about 10 μm to 20 μm.

  Thereafter, as shown in FIG. 89, the entire upper surface of the element body forming portion 51C excluding the terminal forming portion 51A and the magnetic layer forming portion 51B in the insulating layer 51 is exposed.

  Next, as shown in FIG. 90, the terminal forming portions 50A and 51A and the magnetic layer forming portion 51B shown in FIG. 89 are removed by development.

  Thereafter, as shown in FIG. 91, a base electrode layer (not shown) is formed by electroless plating or the like on the entire exposed surfaces of the element body forming portions 50B and 51C and the magnetic terminals 28A and 29A shown in FIG. A magnetic body 52 is formed by electroplating using the base electrode layer (not shown) as a power feeding layer, and the magnetic body 52 is polished from above to expose the element body forming portion 51C on the upper surface. At this time, the magnetic body 52 has entered the portions corresponding to the terminal forming portions 51A and 50A and the magnetic layer forming portion 51B shown in FIG. 89, and the magnetic body 52 that has entered the terminal forming portions 51A and 50A is shown in FIG. A part of the magnetic terminals 28A and 29A shown in FIG. 40 and the magnetic body 52 that has entered the magnetic layer forming part 51B become the magnetic layer 30A shown in FIG. As a polishing method, a flat element forming portion 51C can be formed by using cutting or CMP.

  When the magnetic body 52 is formed by sputtering, a base electrode layer (not shown) is not necessary. However, when the electroplating method is used, the magnetic body 52 can be uniformly formed regardless of the shape of the exposed surface of the body forming portions 50B and 51C and the magnetic body terminals 28A and 29A, which are formed bodies, In addition, there is an advantage that the film forming speed is high.

  Next, as shown in FIG. 92, an insulating layer 53 is formed of photoresist on the entire upper surfaces of the magnetic terminals 28A and 29A, the magnetic layer 30A, and the element forming portion 51C. By using a photoresist, it is possible to form a thin insulating layer 53 having excellent planar uniformity and having a thickness of about 10 μm to 20 μm.

  Thereafter, as shown in FIG. 93, the entire upper surface of the element body forming portion 53B excluding the terminal forming portion 53A in the insulating layer 53 is exposed.

  Next, as shown in FIG. 94, an insulating layer 54 is formed of photoresist on the entire upper surface of the terminal forming portion 53A and the element forming portion 53B. By using a photoresist, it is possible to form a thin insulating layer 54 having excellent planar uniformity and having a thickness of about 10 μm to 20 μm.

  Thereafter, as shown in FIG. 95, the entire upper surface of the element body forming portion 54B excluding the terminal forming portion 54A in the insulating layer 54 is exposed. Here, the terminal forming portion 54 </ b> A is formed with a distance inward from the outermost peripheral portion in the insulating layer 54.

  Next, as shown in FIG. 96, the terminal forming portions 53A and 54A shown in FIG. 95 are removed by development.

  Thereafter, as shown in FIG. 97, a base electrode layer (not shown) is formed on the entire exposed surfaces of the magnetic terminals 28A and 29A and the element forming portions 53B and 54B shown in FIG. The magnetic body 55 is formed by electroplating using this base electrode layer (not shown) as a power feeding layer.

  When the magnetic body 55 is formed by sputtering, a base electrode layer (not shown) is not necessary. However, when the electroplating method is used, the magnetic body 55 can be uniformly formed regardless of the shape of the exposed surface of the magnetic body terminals 28A and 29A and the element body forming portions 53B and 54B, which are formed bodies. In addition, there is an advantage that the film forming speed is high.

  Next, as shown in FIG. 98, the magnetic body 55 shown in FIG. 97 is polished from above to expose the element body forming portion 54B on the upper surface. At this time, the magnetic body 55 is inserted into portions corresponding to the magnetic terminal forming portions 53A and 54A shown in FIG. 95, and these become a part of the magnetic terminals 28A and 29A shown in FIG. As this polishing method, a flat element forming portion 54B can be formed by using cutting or CMP.

  Thereafter, as shown in FIG. 99, the substrate 32 is removed by hydrofluoric acid treatment or the like.

  In this way, a part of the terminals 28 and 29 are constituted by the magnetic terminals 28A and 29A, and the magnetic layers 30A, 30B, 30C and 30D and the magnetic middle legs 31 are formed in the element body 26. Inductance components with high values can be manufactured.

  The inductance component of the present invention is characterized by a high inductance value, and is useful in various electric devices.

Sectional drawing of the inductance component in Embodiment 1 of this invention The top view of the inductance component in Embodiment 1 of this invention Sectional drawing which shows the manufacturing process of the inductance components in Embodiment 1 of this invention Sectional drawing which shows the manufacturing process of the inductance components in Embodiment 1 of this invention Sectional drawing which shows the manufacturing process of the inductance components in Embodiment 1 of this invention Sectional drawing which shows the manufacturing process of the inductance components in Embodiment 1 of this invention Sectional drawing which shows the manufacturing process of the inductance components in Embodiment 1 of this invention Sectional drawing which shows the manufacturing process of the inductance components in Embodiment 1 of this invention Sectional drawing which shows the manufacturing process of the inductance components in Embodiment 1 of this invention Sectional 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invention Sectional drawing which shows the manufacturing process of the inductance components in Embodiment 2 of this invention Sectional drawing which shows the manufacturing process of the inductance components in Embodiment 2 of this invention Sectional drawing which shows the manufacturing process of the inductance components in Embodiment 2 of this invention Sectional drawing which shows the manufacturing process of the inductance components in Embodiment 2 of this invention Sectional drawing which shows the manufacturing process of the inductance components in Embodiment 2 of this invention Sectional drawing which shows the manufacturing process of the inductance components in Embodiment 2 of this invention Sectional drawing which shows the manufacturing process of the inductance components in Embodiment 2 of this invention Sectional drawing which shows the manufacturing process of the inductance components in Embodiment 2 of this invention Sectional drawing which shows the manufacturing process of the inductance components in Embodiment 2 of this invention Sectional drawing which shows the manufacturing process of the inductance components in Embodiment 2 of this invention Sectional drawing which shows the manufacturing process of the inductance components in Embodiment 2 of this invention Sectional drawing which shows the manufacturing process of the inductance components in Embodiment 2 of this invention Sectional drawing which shows the manufacturing process of the inductance components in Embodiment 2 of this invention Sectional drawing which shows the manufacturing process of the inductance components in Embodiment 2 of this invention Top view of conventional inductance components

Explanation of symbols

5 Element body 6 Coil 7, 8 terminal 7A, 8A Magnetic body terminal

Claims (2)

An element body made of photoresist ;
A coil formed in this element,
A terminal electrically connected to the coil;
An inductance component formed of a magnetic material made of iron or an iron alloy that is electrically connected by being in contact with the terminal and includes any one of Fe, FeNi, FeNiCo, and FeCo . An element body made of photoresist and a coil formed in the element body;
And a terminal that is electrically connected to the coil, and is formed of a magnetic material made of iron or an iron alloy that is electrically connected to the terminal and includes any one of Fe, FeNi, FeNiCo, and FeCo. A method for manufacturing an inductance component, comprising:
The step of forming a magnetic body made of iron or an iron alloy that is electrically connected to the terminal and includes any one of Fe, FeNi, FeNiCo, FeCo,
A first step of forming an insulating layer using a photoresist;
A second step of forming a magnetic terminal forming part formed by removing a part of the insulating layer and an element forming part obtained by removing the magnetic terminal forming part from the insulating layer;
And a third step of forming a magnetic body in the magnetic terminal forming portion.

Images