JP5067296B2 - Ion beam processing equipment - Google Patents

Description

  The present invention relates to an ion beam processing apparatus, and more particularly, to an ion beam processing apparatus using a focused ion beam (abbreviated as FIB) and having a function of separating a fine portion from a sample and a processing method thereof.

  Japanese Patent Laid-Open No. 8-315764 discloses a conventional technique for setting the height using the relationship between the lens intensity of the ion beam irradiation means and the beam focusing position. The prior art will be described with reference to FIG. In the present disclosure example, the object whose height is set is the nozzle 103, and the height of the object is the distance from the surface of the sample 101 to the tip 103 a of the nozzle 103. The relationship between the lens voltage of the focusing lens and the distance from the lens to the beam focusing point is obtained in advance. The ion beam 100a is focused and scanned at the processing target position of the sample 101 by adjusting the lens intensity of the beam focusing lens. At this time, a secondary ion emitted from the beam irradiation unit is detected, and a scanning ion image (abbreviated as a SIM image) is obtained by using the signal as a luminance signal of the scanning image display means. The secondary particles here are mainly secondary electrons and secondary ions. Since the beam is just focused at the height position of the sample surface, the sample surface is observed with high resolution. On the other hand, the nozzle 103 becomes a blurred image with poor resolution because the beam is not focused even when the scanning beam is irradiated. The setting accuracy of this height setting method is determined by the focal depth of the beam. Next, the lens intensity is adjusted so that the focal point of the beam comes to a desired position (for example, a height position 300 μm before the sample surface) based on the previously obtained relationship. The scanning ion image is monitored and observed in the beam focusing state 101, and the nozzle 103 is moved up and down and set so as to be focused on the nozzle tip 103a. However, in this conventional method, the desired height is a fixed value, and once it is set, there is no need to reset it. Therefore, the operator has only used the converted value from the height obtained in advance to the lens strength.

Japanese Patent Publication No. 2774884 discloses a conventional technique of an ion beam processing apparatus having a function of separating a fine portion from a sample substrate. The prior art will be described with reference to FIG. A fine sample piece (separated sample) 209 is cut out from the sample substrate 202 and separated by a three-dimensional fine processing technique and a micro manipulation technique using the FIB 201. A square hole 203 is created in the sample substrate 202, and the sample substrate 202 is tilted to create a bottom hole 204. The sample substrate 202 is returned to its original position, a notch groove 205 is formed, the probe 231 is introduced, and the probe tip contacts the sample surface. During the step of separating a part of the sample including the analysis target portion, the machine is formed by the deposited film 208 formed by irradiating the FIB 201 to the gas 207 introduced from the nozzle 206 with the probe 231 and the separated sample 209 introduced separately from the outside. Connect. After the connection, the sample 209 separated by the FIB 201 is supported by the probe 231 and transported.
JP-A-8-315764 Japanese Patent Publication No. 2774884

  A conventional FIB processing apparatus (described in Japanese Patent Publication No. 2774884) having a function of separating a fine portion from a sample substrate is about several hundred μm in the height direction (Z direction) in order to bring the probe 231 into contact with the sample substrate 202. I have to move. In addition, the moving distance changes for each processing region. However, it has only the function of detecting the contact between the probe 231 and the sample substrate 202, and has no function of measuring the height of the sample surface and the height between the probe and the sample surface and transmitting the information to the operator. Therefore, when moving the probe to the vicinity of the sample surface, it is not known how much the probe should be moved in the height direction, and the collision avoidance between the probe and the sample relies exclusively on the feeling obtained from the experience of the operator. . For this reason, the moving speed of the probe is extremely slow, and the working efficiency is deteriorated. In order to improve the work efficiency, it is a problem to display the height information of the sample substrate and the probe itself on the SIM image display means used for monitoring the work.

  The present invention relates to an ion beam processing apparatus in which one or a plurality of specific locations within the FIB scanning range need to be adjusted to a desired height. Alternatively, the present invention provides an ion beam processing apparatus and a processing method thereof capable of transmitting at least one piece of information on the relative height between the specific locations and performing an operator's height adjustment operation with high efficiency and high reliability.

  In order to solve the above-described problems, an ion beam processing apparatus according to the present invention includes a lens power supply that adjusts the lens intensity of an ion beam irradiation unit at one or more specific locations within the FIB scanning range and focuses the lens power, and the lens intensity. The focal position (height) of the specific location is calculated from the focal position (height) of the specific location, the relative position (relative height) of the specific location, the focal position (height) or the relative position ( Display means for displaying at least one piece of information of the determination result whether or not the relative height is within the set value including the allowable value.

  According to the present invention, when one or a plurality of specific locations within the beam scanning range are adjusted and moved to a desired height, the operator does not need to convert the height from the lens strength. The information can be confirmed directly by the display means. In particular, the operator can achieve high throughput and high reliability even when the sample height or desired height varies from workpiece to workpiece or from time to time, and when there are two or more desired heights for the same sample. Adjustable movement is possible.

  In particular, in an FIB processing apparatus having a function of separating a minute portion from a sample substrate and a function of moving a connected body to connect to the sample substrate, the operator can obtain height information of a desired location within the FIB scanning range. The display means for displaying can directly check the relative height information of the sample, the moving means, and the connected body, and the moving object can be adjusted and moved while checking the moving amount. As a result, the above-described separation work, connection work, and movement work can be performed with high throughput and high reliability.

  Embodiments of the present invention will be described below with reference to FIGS. FIG. 1 shows the basic configuration of the FIB apparatus used in this embodiment. The ion beam irradiation means 8 controls the ion beam 4. The ions emitted from the ion source 1 are focused by the condenser lens 2 and the objective lens 3 to become an ion beam 4, and the ion beam 4 is scanned by the deflector 5. The ion beam 4 is a focused ion beam (FIB), and its beam diameter is several nm to several μm. The FIB in this beam diameter range is very suitable for a height measurement method using the depth of focus. By this ion beam irradiation means 8, the ion beam 4 is placed on a sample 7 placed on a stage 6 capable of plane movement (X, Y axes) and tilt (T axis), and in the plane and height directions (X, Y, Z axes). ) Is focused on and scanned by the probe 10 mounted on the moving means 9 capable of moving to (). Secondary particles generated by scanning the ion beam 4 are detected by the secondary particle detection means 11, and a beam scanning image is displayed on the display means 12 by the output signal. The secondary particles here are secondary electrons having a negative charge or secondary ions having a positive charge. The sample 7 and the probe 10 have different heights, and the focal point is adjusted by adjusting the lens strength of the objective lens 3 by the lens power source 13. This focusing is performed by an operator or automatic focusing means of the apparatus. Control of the lens power supply 13 and the like is performed via a computer 14. As an initial state, the probe 10 is set to a height at which it does not come into contact with the sample 7, that is, several hundred μm above the sample. A relational expression (Vo = f (Z), Z = g (Vo)) between the lens voltage Vo of the objective lens 3 and the distance Z from the objective lens 3 to the beam focusing point is obtained in advance by calculation. It should be confirmed that this relational expression also fits well experimentally.

  Further, the position accuracy by the method of finding the sample height position of the just focus by visual observation from the SIM image is ± 30 μm. Therefore, the height measuring means using this depth of focus is effective for coarse movement for moving the probe 10 to a height position of several tens of μm above the sample.

In the calculator 14, a relational expression (Vo = f (Zf), Zf = g (Vo)) between the lens voltage Vo of the objective lens 3 and the distance Zf from the objective lens 3 to the beam focusing point is registered in advance. The height Z (Z = h−Zf: h is the distance from the objective lens 3 to the surface of the stage 6) is calculated from the lens voltage Vo and displayed on the display means 12. FIG. 3 shows an example of the display. Examples of the display window 15 are shown in (a) to (f). An example of the operation procedure and display will be described with reference to FIG.

(1) First, the ion beam 4 is focused on the sample 7 and the SET button 16 is clicked.

(2) The lens voltage Vo1 of the objective lens 3 at this time is read and the height Z1 of the sample 7 is automatically calculated, and the first display 17a of the height display bar 17 corresponds to Z1 with respect to the Z-axis scale 19. At the same time, the calculated value of the height Z1 is displayed in the first display 18a of the height display column 18.

(3) Next, the ion beam 4 is focused on the tip of the probe 10, and the SET button 16 is clicked in the same manner.

(4) The lens voltage Vo2 of the objective lens 3 at this time is read, the height Z2 of the tip of the probe 10 is automatically calculated, and the second display 17b of the height display bar 17 with respect to the Z-axis scale 19 is Z2. The calculated value of the height Z2 is displayed at the second 18b of the height display column 18 at the same time. The relative heights of the locations 1 and 2 are displayed in the relative height display column 20.

  When there are two measurement areas, the setting is completed. When there are three or more setting areas, the operations (3) to (4) are repeated. In FIG. 3, the cases of up to three places are shown in (d) to (f) for convenience. The display of height is the method of displaying the height of each measurement area as in the examples of (a), (c), (d), and (f), and the lowest height as in the examples of (b) and (e). There is a method of indicating the relative height of each location using the location as a reference (Z = 0). This reference can be set by the operator, and when there are three or more setting points, a plurality of reference values can be set. In this case, control is performed such that a portion lower than the reference portion is ignored and ignored. In addition, as in the examples of (c) and (f), it is possible to indicate the danger range 21 exceeding the limit of the height measurement accuracy using the depth of focus.

  The display bar 17 moves up and down in conjunction with the movement of the probe 10 in the height direction (Z direction), and the height information in the relative height display column 20 also changes. The height measurement accuracy using the depth of focus is registered in advance in the computer. While the probe 10 is moving, when the relative height reaches the height measurement accuracy using the depth of focus, a display such as “VeryClose” is displayed in the relative height display column 20 to notify the operator of the attention or It is also possible to notify the operator of the information notifying that it has been performed and the status information indicating whether or not it has been exceeded by changing the color, shape and size, or by making a sound from the computer. The threshold of the relative height that alerts the operator can be set in advance by the operator. It is also possible to control the probe 10 so that the movement of the probe 10 stops when the probe 10 reaches the height measurement accuracy using the depth of focus or reaches a set threshold value set in advance by the operator.

  In FIG. 2, the probe 10 is lowered to the surface of the sample and brought into contact, the separated sample 22 is cut from the sample 7, the separated sample 22 is bonded to the probe 10, and the bonded probe for each separated sample is pulled up to above the connected body 23. This is an example of an ion beam processing apparatus that moves, lowers a probe with a separated sample to the vicinity of the surface of the connected body, and bonds the separated sample 22 and the connected body 23 together. In the case of this embodiment, there are three height measurement points. Further, the probe 10 is lowered to the surface of the sample and brought into contact with the probe, and the probe with the separated sample is lowered to the vicinity of the surface of the connected body and the separated sample 22 and the object to be measured. The reference point is different in the operation of bonding the connection body 23. An example of the height display of each part on the display means 12 in this case is shown in FIG. The Standard button 24 which is a reference | standard location registration function is added to the Example shown in FIG. As described above, the operation procedure will be described with reference to FIG.

(1) First, the ion beam 4 is focused on the sample 7 and the SET button 16 is clicked.

(2) The lens voltage Vo1 of the objective lens 3 at this time is read and the height Z1 of the sample 7 is automatically calculated, and the first display 17a of the height display bar 17 corresponds to Z1 with respect to the Z-axis scale 19. At the same time, the calculated value of the height Z1 is displayed in the first display 18a of the height display column 18.

(3) When this height is used as the first reference, the Standard button 24 is clicked.

(4) Next, the ion beam 4 is focused on the connected body 23 and the SET button 16 is clicked.

(5) The lens voltage Vo2 of the objective lens 3 at this time is read, and the height Z2 of the connected body 23 is automatically calculated, and the second display 17b of the height display bar 17 is set to Z2 with respect to the Z-axis scale 19. The calculated value of the height Z2 is displayed at the second position 18b of the height display column 18 at the same time.

(6) When this height is used as the second reference, the Standard button 24 is clicked.

(7) Next, the ion beam 4 is focused on the tip of the probe 10, and the SET button 16 is clicked in the same manner.

(8) The lens voltage Vo3 of the objective lens 3 at this time is read, the height Z3 of the tip of the probe 10 is automatically calculated, and the third display 17c of the height display bar 17 with respect to the Z-axis scale 19 is Z3. The calculated value of the height Z3 is displayed in the third 18c of the height display column 18 at the same time.

(9) When the first height display column 18a registered as the reference location is clicked, the relationship between the reference location 1 and the location 3 is displayed as in the embodiment of FIG. In the relative height display column 20, the relative heights of the location 1 and the location 3 are displayed.

(10) When the second height display column 18b registered as the reference location is clicked, the relationship between the reference location 2 and the location 3 is displayed as in the embodiment of FIG. In the relative height display column 20, the relative heights of the places 2 and 3 are displayed.

  The operation and other display examples are the same as those described above.

  Next, in the ion beam processing apparatus, the separated sample 22 is cut out from the sample 7 at each of a plurality of locations of the sample 7, and each separated sample 22 is connected to a single or a plurality of connected objects using the probe 10 by the method described above. An embodiment of an ion beam processing apparatus that adheres to a body 23 is shown. As described above, the operation procedure will be described with reference to FIG. 5 and FIG.

  FIG. 5 shows an embodiment in which the separated samples 25a, 25b, and 25c are cut from three locations of the sample 7 and bonded to the three connected bodies 23a, 23b, and 23c, respectively. All the heights of each part are registered before processing. FIG. 6 shows an example of display on the display means 12. The basic configuration is the same as that of the embodiment shown in FIG. 4, and three sets of heights can be displayed corresponding to three machining locations. This number increases or decreases according to the number of processes. As described above, the operation procedure will be described with reference to FIG.

(1) First, the ion beam 4 is focused on the processing location 25a of the sample 7, and the SET button 16a for Za is clicked.

(2) At this time, the lens voltage Vo1a of the objective lens 3 is read, and the height Z1a of the processing portion 25a of the sample 7 is automatically calculated, and the first display 17a of the height display bar 17 corresponds to the Z-axis scale 19a. The calculated value of the height Z1a is displayed at the position 18a of the height display column 18 at the same time as the position corresponding to Z1a.

(3) When this height is used as the first reference, the Standard button 24a is clicked.

(4) Next, the ion beam 4 is focused on the connected body 23a, and the SET button 16a is clicked.

(5) At this time, the lens voltage Vo2a of the objective lens 3 is read, and the height Z2a of the connected body 23a is automatically calculated, and the second display 17b of the height display bar 17 is changed to Z2a with respect to the Z-axis scale 19a. The calculated value of the height Z2a is displayed at the second position 18ab of the height display column 18 at the same time.

(6) When this height is used as the second reference, the Standard button 24a is clicked.

(7) Next, the ion beam 4 is focused on the tip of the probe 10, and the SET button 16a is clicked in the same manner.

(8) The lens voltage Vo3a of the objective lens 3 at this time is read, the height Z3a of the tip of the probe 10 is automatically calculated, and the third display 17ac of the height display bar 17 with respect to the Z-axis scale 19 is Z3a. The calculated value of the height Z3a is displayed in the third 18ac of the height display column 18 at the same time.

(9) When the first height display column 18aa registered as the reference location is clicked, the reference location 1 (corresponding to the processing location 25a) and the location 3 (tip portion of the probe 10) as in the embodiment of FIG. Is equivalent). In the relative height display column 20a, the relative heights of the location 1 (processing location 25a) and the location 3 (tip end of the probe 10) are displayed.

(10) When the second height display column 18ab registered as the reference location is clicked, the reference location 2 (corresponding to the connected body 23a) and the location 3 (tip of the probe 10) as in the embodiment of FIG. The relationship to the part) is displayed. The relative height display column 20 displays the relative heights of the location 2 (connected body 23a) and the location 3 (tip end of the probe 10).

(11) Next, the steps (1) to (8) are performed on the machining location 25b, the connected body 23b, and the probe 10, and the respective heights are registered in Zb. The display switching procedure is the same as (9) and (10).

(12) Next, the steps (1) to (8) are performed on the machining location 25c, the connected body 23c, and the probe 10, and the respective heights are registered in Zc. The display switching procedure is the same as (9) and (10).

  The operation and other display examples are the same as those described above.

  Next, an embodiment will be described in which the probe 10 is automatically roughly moved to the sample 7 and then switched to the fine movement for contact.

(1) The operator registers the position coordinates (X, Y) of the distal end portion of the probe 10 and the size of the area to be focused in advance in the calculator 14 using the SIM image. In addition, the position coordinates (X, Y) as the height comparison target and the size of the area as the focusing target are also registered in the computer 14 in the sample 7.

(2) The height Zs of the specific area of the sample registered in the above (1) is determined by automatic focusing means (ordinary means used in a scanning electron microscope or the like), and the lens voltage Vo at that time and the objective lens 3 are used. Zs is measured using a relational expression Z = g (Vo) with the distance Z to the beam focusing point, and is displayed on the display means.

(3) The height Zp of the tip of the probe 10 registered in (1) above is also measured in the same manner as described above and displayed on the display means.

(4) The operator determines the coarse movement speed of the probe 10 and the Zp threshold value for stopping the coarse movement from the magnitude of the height difference between Zp and Zs.

(5) The threshold value of Zp is displayed on the display means via the computer 14.

(6) The determined rough movement speed information of the probe is transmitted to the moving means 9 via the computer 14, and the movement at that speed is started by the movement start instruction.

(7) The height Zp of the tip of the probe 10 is repeatedly measured at an interval of about 1 second using the automatic focusing means, and the Zp value on the display means is constantly updated.

(8) When Zp exceeds the threshold value of (5), the coarse movement of the probe is stopped, and the height information on the display means that has so far been displayed is displayed in color, shape, Change the size to make it stand out, and inform the operator by the pronunciation from the computer.

(9) The movement of the probe 10 is switched to a fine movement with a slower speed (the speed is experimentally obtained in advance and registered in the computer 14). The contact determination of the probe 10 to the sample 7 is performed by the following method disclosed in Japanese Patent No. 2774884, and the fine movement of the probe 10 is stopped at the time of contact. The conductive probe 10 is connected to a voltage source (voltage is Vs) through a high resistance. The potential of the probe 10 is approximately Vs when the probe 10 is not in contact with the sample 7, and is the potential of the sample 7 (ground potential) when it is in contact. Since this potential change appears as a change in voltage contrast of the SIM image, the determination is easy. A change in the voltage contrast of the SIM image is detected by the operator's visual observation to determine whether the probe 10 is in contact with the sample.

  Next, an embodiment for automatically producing a transmission electron microscope (abbreviated as TEM) observation sample (abbreviated as TEM sample) using the above-described ion beam processing apparatus will be described.

(1) A cross mark 26 shown in FIG. 7A is formed by scanning the ion beam (here FIB) 4 at a desired processing position on the sample 7.

(2) The reference position coordinates (X, Y, Z) of the tip of the probe 10 determined mechanically and the size of the area to be scanned by the FIB 4 are registered in the computer 14. Further, the desired processing position coordinates (X, Y, Z) of the stage 6 and the size of the area for scanning the FIB 4 and the position coordinates (X, Y, Z) of the connected body 23 and the size of the area for scanning the FIB 4 are also provided. Register in the computer 14.

  When there are a plurality of desired processing positions, the registration procedure of (1) and (2) is repeated for a plurality of processing positions.

  Subsequent operations are automatically performed by the computer 14.

(3) The calculator 14 calculates the scanning position of the FIB 4 from the registration information of the probe 10 and controls the ion beam irradiation means 8. The calculator 14 calculates the focal lens voltage Vo1 at the tip of the probe 10 from the registered Z coordinate of the probe 10 and the above-described relational expression (Vo = f (Z)). This voltage is very close to the lens voltage at which the FIB 4 is focused on the tip of the probe 10, but is not a voltage that accurately focuses.

(4) Set the lens voltage of the objective lens 3 to Vo1, change the lens voltage by ΔVo intervals around Vo1 by ΔVo ± ΔVo × n (n is an integer), and acquire a SIM image with each lens voltage. To do. Since ΔVo has an optimum value depending on the beam diameter of the FIB 4 to be used, an optimum value is experimentally obtained for each beam diameter and registered in the computer 14 in advance. The computer 14 selects and applies the optimum ΔVo according to the beam diameter of the FIB to be scanned.

(5) For each acquired SIM image, the brightness data of the SIM image is differentiated, and the differentiated data is integrated for one SIM image. A relationship regarding the lens voltage is obtained for each of these values, and a lens voltage having a maximum value is obtained by the least square method. This lens voltage becomes the lens voltage Vo1max at which the FIB 4 is focused on the tip of the probe 10.

(6) The height of the tip of the probe 10 is obtained from the lens voltage Vo1max by the above-described relational expression (Z = g (Vo)) and registered as the height information of the probe 10.

(7) Next, the computer 14 sequentially performs the processes (3) to (6) on the sample 7 and the connected body 23 instead of the probe 10, so that the desired processing position of the sample 7 and the connected body 23 Calculate and register height information. If there are a plurality of desired processing regions, the registration procedure for the plurality of processing regions is repeated.

(8) The FIB 4 is focused on the desired processing position from the height information of the desired processing position of the sample 7 registered in advance, and the position of the cross mark 26 is detected by an image recognition method to calculate an accurate processing position. To do.

(9) As shown in FIG. 7B, in order to protect a desired TEM observation position, a gas 28 is introduced from the nozzle 27, and FIB 4 is irradiated to the TEM observation position to form a metal deposition film 29.

(10) As shown in FIG. 7C, the groove 30 and the inclined groove 31 are formed by FIB around the metal protective film, and the separation sample 22 is manufactured. Here, the sample 7 and the separated sample 22 are not completely separated yet.

(11) The movement distance of the probe 10 is obtained from the position coordinate (X, Y, Z) information of the tip of the registered probe 10 and the position coordinate information of the target region of the sample 7, and the probe 10 starts coarse movement. . In the Z direction, the probe 10 moves until the threshold value previously registered in the computer 14 is reached. When the aforementioned threshold is reached, the probe 10 stops.

(12) The movement of the probe 10 is switched to a fine movement with a slower speed (the speed is experimentally obtained and registered in the computer 14 in advance), and the probe 10 starts moving again and moves when it contacts the sample 7. To stop. The contact determination is performed by detecting the potential change of the probe 10 described above.

(13) As shown in FIG. 7D, the probe 10 and the separated sample 22 are mechanically connected by a metal deposition film 29 formed by irradiating the gas 28 introduced from the nozzle 27 with the FIB 4.

(14) As shown in FIG. 7E, the sample 7 and the separated sample 22 are completely separated, and the probe 10 and the separated sample 22 are lifted from the sample 7 and moved to the reference position coordinates.

(15) As shown in FIG. 7 (f), the probe 10 and the separated sample 22 are moved horizontally to the upper part of the connected body 23 from the registered position coordinate information of the connected body 23.

(17) The movement distance of the probe 10 is obtained from the registered reference position coordinates of the probe 10 and the position coordinate information of the connected body 23, and the probe 10 starts coarse movement. In the Z direction, the probe 10 moves until the threshold value previously registered in the computer 14 is reached. When the aforementioned threshold is reached, the probe 10 stops.

(18) The movement of the probe 10 is switched to a fine movement with a slower speed (the speed is experimentally obtained and registered in the computer 14 in advance), the probe 10 starts moving again, and the connected object 23 and the separated sample 22 are moved. Stops moving at the point of contact. The contact determination is performed by detecting the potential change of the probe 10 described above.

(19) The FIB 4 is focused on the connected body 23 from the registered position coordinate information of the connected body 23. As shown in FIGS. 7 (g) and 7 (h), the separated sample 22 and the connection target 23 are mechanically connected by a metal deposition film 29 formed by irradiating the gas 28 introduced from the nozzle 27 with FIB4, and then FIB4. Is irradiated to the portion where the probe 10 and the separated sample 22 are connected, and the probe 10 and the separated sample 22 are separated.

  When there are a plurality of desired separated samples 22, the operations (8) to (19) are repeated for a plurality of desired separated samples 22.

(20) The FIB 4 is focused on the surface of the separated sample 22 connected to the connected body 23 by executing the procedures (3) to (5) using the registered position coordinate information of the connected body 23. .

(21) As shown in FIG. 8A, the FIB 4 is scanned, and the position of the cross mark 26 formed on the separated sample 22 is detected by an image recognition method.

(22) The processing position is registered in advance with the position of the cross mark 26 as a reference. The pre-registered processing areas 33 and 34 are set for the position of the cross mark 26 detected in the step (21), and the FIB 4 is scanned into a shape as shown in FIGS. 8B and 8C. Process. The thin piece portion 32 is a portion to be observed by TEM. FIG. 8B is a top view of the separated sample 22 that has been thinned, and FIG. 8C is a bird's-eye view of the separated sample 22 that has been thinned. It is also possible to process the processing regions 33 and 34 using a shaped ion beam instead of FIB.

  If there are a plurality of desired separated samples 22, the operations (20) to (22) are repeated for a plurality of desired separated samples.

(24) When all the operations are completed, the display on the display means 12 that has displayed the operation status such as height information is changed in color, shape, size, etc. Make the display stand out or signify the end of work. Furthermore, the end of the work is notified to the operator by the pronunciation from the computer 14. By connecting a LAN to the computer 14, the end of work can be notified in the same way by a new display means and a computer installed in a separate room away from the installation location of the apparatus.

  The ion beam processing apparatus, particularly the ion beam processing apparatus using FIB or a shaped beam as the ion beam, can perform processing such as cutting a sample, drilling a hole, digging a groove, and bonding two samples. It is the biggest feature and a big difference from the electron microscope. The FIB processing equipment is not limited to simple sample processing, but can be applied to introduce a gas containing metal as described above to form a metal deposition film, or to transplant a device by combining it with a micromanipulation mechanism. is there. In these applications, there are introductions that are introduced from the outside, such as a gas introduction nozzle and a micromanipulator, and are adjusted and moved in the height direction. The present invention is indispensable for controlling these introductions in the height direction and performing highly efficient and highly accurate machining.

  In the case where the sample 7 is an insulator, a charge neutralization means for neutralizing the charge of the sample is added to the ion beam processing apparatus, so that the amount of electrons substantially equal to the amount of positive charge of the ion beam that accumulates on the surface of the sample 7. Is supplied to the sample 7 as an electronic shower by the charge neutralizing means, thereby preventing the sample 7 from being charged. In this case, the secondary particles use secondary ions having a positive charge. The technique for adjusting a single or a plurality of specific locations within the beam scanning range of the present invention to a desired height can be applied to work using a focused beam such as an electron beam or a laser beam. In a composite micromanipulation apparatus in which an ion beam processing apparatus and a scanning electron microscope (abbreviated as SEM) are combined so that the optical axes of the ion beam and the electron beam intersect each other at about 60 degrees, a desired micro-manipulation apparatus can be used by the method of the present invention. It is possible to measure the height, feed back the height information to the FIB, adjust the focus of the FIB, and perform various processes. In this apparatus, since an electron beam is used for height measurement, the amount of irradiation of a sample with an ion beam having a mass larger than that of electrons can be reduced, and as a result, damage to the sample can be reduced. However, when the sample is an insulator, it is advantageous to use an ion beam as the height measurement beam. Since the ion beam has a positive charge, when the ion beam is irradiated onto the insulator sample, a positive charge is accumulated on the sample surface. By irradiating the insulator sample with an electron beam of SEM having substantially the same charge amount as the positive charge, the charge accumulated on the insulator sample can be neutralized. Therefore, when the ion beam is used, the sample is somewhat damaged as compared with the case where the electron beam is used, but the method of the present invention can be used regardless of the type of sample, for example, a conductor, a semiconductor, or an insulator. Further, in a composite micromanipulation device that combines an ion beam processing device and a laser beam, a desired height is measured by the method of the present invention using the ion beam, and this height information is fed back to the laser beam generating means so that the laser beam is generated. Processing can be performed with a laser beam by adjusting the focal position with a laser beam irradiation means so that the focal point comes to a desired processing region on the sample. High-speed processing can be realized by processing with a laser beam.

The basic block diagram of an ion beam processing apparatus. The basic block diagram of the ion beam processing apparatus with a micro manipulation mechanism. The figure which shows one Example of a display of height information. The figure which shows one Example of a display of height information. The figure which shows one Example which takes out several isolation | separation samples from the same sample, and connects to several to-be-connected bodies. The figure which shows one Example of the height information display at the time of taking out several isolation | separation samples from the same sample, and connecting to a some to-be-connected body. The figure which shows one Example of the automatic transmission electron microscope observation sample preparation method. The figure which shows one Example of the automatic transmission electron microscope observation sample preparation method. Explanatory drawing of a prior art. Explanatory drawing of a prior art.

Explanation of symbols

  DESCRIPTION OF SYMBOLS 1 ... Ion source, 2 ... Condenser lens, 3 ... Objective lens, 4 ... Ion beam, 5 ... Deflector, 6 ... Stage, 7 ... Sample, 8 ... Ion beam irradiation means, 9 ... Moving means, 10 ... Probe, 11 ... secondary particle detecting means, 12 ... display means, 13 ... lens power supply, 14 ... computer.

Claims (18)

A stage on which the sample can be placed;
An ion beam irradiation means for scanning the ion beam;
Secondary particle detection means for detecting secondary particles emitted from the irradiated portion by beam irradiation;
Micro manipulation mechanism,
Control means including a computer for controlling the ion beam irradiation means and the secondary particle detection means;
A lens power supply that adjusts the lens intensity of the ion beam irradiation means to focus the ion beam,
The control means controls the lens voltage of the lens power supply so that the ion beam is focused on the micromanipulation mechanism and the sample, and calculates the micromanipulation mechanism and the height of the sample from the lens voltage. ,
An ion beam processing apparatus that moves the micro manipulation mechanism until a difference between a height of the manipulation mechanism and a height of the sample reaches a predetermined value . The ion beam processing apparatus according to claim 1,
The ion beam processing apparatus, wherein the micromanipulation mechanism includes a probe.   The ion beam processing apparatus according to claim 1, further comprising a micromanipulation mechanism and display means for displaying the height direction coordinates of the sample. In the ion beam processing apparatus according to claim 3 ,
The ion beam processing apparatus, wherein the display means displays a micromanipulation mechanism and a relative position of the sample. The ion beam processing apparatus according to claim 1,
An ion beam processing apparatus characterized in that the control means moves the micromanipulation mechanism by a fine movement slower than the moving speed after the micromanipulation mechanism is moved from the sample to a position of a predetermined height. . In the ion beam processing apparatus according to claim 5,
An ion beam processing apparatus, wherein the control means stops fine movement of the micromanipulation mechanism when the micromanipulation mechanism contacts the sample. The ion beam processing apparatus according to claim 6, wherein
A voltage source connected to the micromanipulation mechanism;
An ion beam processing apparatus, comprising: a display device that displays a change in a SIM image when the micromanipulation mechanism contacts the sample. The ion beam processing apparatus according to claim 1,
It has a nozzle that can introduce gas,
An ion beam processing apparatus, wherein the control means brings the micromanipulation mechanism into contact with a separated sample which is a part of the sample, introduces a gas from the nozzle, and irradiates the contacted portion with an ion beam. 9. The ion beam processing apparatus according to claim 8, wherein the control means irradiates a connection portion between the sample and the separated sample with an ion beam, and pulls up the micromanipulation mechanism connected to the separated sample from the sample. A characteristic ion beam processing apparatus. A stage on which the sample can be placed;
An ion beam irradiation means for scanning the ion beam;
A scanning electron microscope for manipulating the electron beam;
Secondary particle detection means for detecting secondary particles emitted from the irradiated portion by beam irradiation;
Micro manipulation mechanism,
Control means including a computer for controlling the ion beam irradiation means and the secondary particle detection means;
A lens power supply that adjusts the lens intensity of the scanning electron microscope and focuses the electron beam;
The control means controls the lens voltage of the lens power supply so that the electron beam is focused on the micromanipulation mechanism and the sample, and calculates the micromanipulation mechanism and the height of the sample from the lens voltage. ,
A composite micromanipulation apparatus that moves the micromanipulation mechanism until a difference between a height of the manipulation mechanism and a height of the sample reaches a predetermined value . The composite micromanipulation device according to claim 10.
A compound micromanipulation apparatus, wherein the micromanipulation mechanism includes a probe.   11. The composite micro-manipulation apparatus according to claim 10, further comprising a micro-manipulation mechanism and display means for displaying the height direction coordinates of the sample. The composite micromanipulation device according to claim 12 ,
The display unit displays a micromanipulation mechanism and a relative position of a sample. The composite micromanipulation device according to claim 10.
The control means moves the micromanipulation mechanism with a fine movement slower than the moving speed after moving the micromanipulation mechanism from the sample to a predetermined height position. . The composite micromanipulation device according to claim 14 ,
The composite micromanipulation apparatus, wherein the control means stops fine movement of the micromanipulation mechanism when the micromanipulation mechanism contacts the sample. The composite micromanipulation device according to claim 15,
A voltage source connected to the micromanipulation mechanism;
A composite micromanipulation apparatus comprising a display device that displays a change in a SIM image when the micromanipulation mechanism contacts the sample. The composite micromanipulation device according to claim 10.
It has a nozzle that can introduce gas,
A composite micromanipulation apparatus in which the control means brings the micromanipulation mechanism into contact with a separated sample which is a part of the sample, introduces a gas from the nozzle, and irradiates an ion beam to the contact location. The composite micromanipulation device according to claim 17,
It has a nozzle that can introduce gas,
It said control means, an ion beam is irradiated to a connection portion between the separating sample and the sample composite micromanipulation apparatus of the micromanipulation mechanisms connected to the partial release sample, characterized in that pulling from the sample.

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