JP5065792B2 - Plasma processing apparatus and semiconductor device manufacturing method - Google Patents

Description

  The present invention relates to a plasma processing apparatus for plasma processing an element and a method for manufacturing a semiconductor device using the same.

  Among semiconductor devices, a flip chip BGA or the like that connects a substrate and a semiconductor chip by flip chip connection uses solder to connect the substrate and the semiconductor chip.

  Conventionally, at the time of this connection, flux is used to facilitate melting of the solder, and after temporary connection, reflow which is a heating process is performed to perform flip chip connection. Therefore, when the underfill resin is injected, the wettability of the substrate and the semiconductor chip surface is improved so that the flux and impurities remaining between the substrate and the semiconductor chip are removed and the underfill resin is easily injected. There is a need to.

  In the prior art, after performing flip chip connection, the flux is washed with liquid and dried, and then oxygen plasma treatment is performed to improve the wettability of the underfill resin.

  FIG. 5 is a schematic diagram of a conventional liquid cleaning apparatus. As shown in FIG. 5, in a conventional liquid cleaning apparatus, a semiconductor chip 83 connected to a substrate 85 is set on a jig 81 and cleaning is performed by flowing a liquid.

FIG. 6 shows a conventional plasma cleaning apparatus. As shown in FIG. 6, after setting the semiconductor chip 83 mounted on the substrate 85 in the vacuum chamber 91 and exhausting the gas in the vacuum chamber 91 from the gas exhaust port 95 to make a vacuum state, Oxygen gas is injected from the gas inlet 93 and a plasma space is generated by the electrode 97 to perform treatment in an oxygen plasma atmosphere.
JP 2001-110825 A

  However, in the prior art described in the above-mentioned document, a drying process is required to perform flux cleaning with a liquid. Accordingly, the apparatus becomes larger and the cleaning time is increased, and the number of processes is increased, leading to an increase in cost.

  Further, if the liquid cleaning is replaced with plasma processing, the conventional plasma processing apparatus takes time because the gas flow is not aimed at the semiconductor chip, which also leads to an increase in cost.

  These problems are not limited to semiconductor chips, but are common to general elements that perform plasma processing.

  The present invention efficiently plasma-processes an element such as a semiconductor chip in a short time.

According to the present invention,
A plasma processing chamber;
A gas supply port for supplying gas to the plasma processing chamber;
A gas outlet for discharging gas from the plasma processing chamber;
A placement unit disposed inside the plasma processing chamber for placing the element;
A shielding member that is disposed at the top of the mounting portion, shields the upper space of the element from the gas supplied from the gas supply port, and guides the gas supplied by the gas supply port to the element;
A plasma processing apparatus is provided.

  This apparatus includes a gas supply port and a gas discharge port, and converts the gas supplied from the gas supply port into plasma and plasma-treats the device. According to this apparatus, by providing the shielding member that shields the upper space of the element, the gas supplied from the gas supply port can be guided to the element, and the plasma density around the element can be stably increased. Thereby, the element can be intensively plasma-processed, and the plasma process can be efficiently performed in a short time.

Moreover, according to the present invention,
A method of manufacturing a semiconductor device including an element using the plasma processing apparatus described above,
There is provided a method for manufacturing a semiconductor device, wherein an element is mounted on the mounting portion and a gas is introduced into the plasma processing chamber to plasma-process the element.

  According to the present invention, by providing the shielding member that shields the upper space of the element, the gas supplied from the gas supply port can be guided to the element, and the element can be efficiently cleaned in a short time. it can.

  In the present invention, the front / rear, left / right, and up / down directions are defined, but this is provided for the sake of simplicity in explaining the relative relationship of the components of the present invention. The direction at the time of manufacture and use is not limited.

  According to the present invention, the device is efficiently plasma-treated in a short time.

  Hereinafter, embodiments of the present invention will be described with reference to the drawings. In all the drawings, the same reference numerals are given to the same components, and the description will be omitted as appropriate.

  FIG. 1 is a cross-sectional view schematically showing the plasma cleaning apparatus of the present embodiment.

  The plasma cleaning apparatus 1 according to the present embodiment is disposed inside a vacuum chamber 11, a gas introduction port 13 that supplies gas to the vacuum chamber 11, a gas discharge port 15 that discharges gas from the vacuum chamber 11, and the vacuum chamber 11. The lower electrode 23 on which the semiconductor chip 19 is placed, and the upper electrode 23 are arranged above the lower electrode 23 to shield the upper space of the semiconductor chip 19 from the gas supplied from the gas inlet 13. A product type jig 17 for guiding the supplied gas to the semiconductor chip 19 is provided.

The product type corresponding jig 17 closes the entire space immediately above the semiconductor chip 19.
FIG. 2 is a schematic diagram showing a product type corresponding jig provided in the plasma cleaning apparatus of the present embodiment. FIG. 2A is a view showing the product type corresponding jig 17 viewed from the same direction as FIG. FIG. 2B is a bottom view of the product type corresponding jig 17. FIG. 2C is a view of the product type corresponding jig 17 viewed from the gas inlet 13 in FIG. As shown in FIG. 2, the product corresponding jig 17 is a block in which a groove 101 serving as a gas flow path is formed, and is placed on the lower electrode 23 with the groove 101 facing downward. The groove 101 accommodates the semiconductor chip 19 and gas is introduced into the groove 101.

  The gas inlet 13 and the gas outlet 15 are disposed at positions facing each other. By doing so, a gas flow path is formed between the gas inlet 13 and the gas outlet 15. A semiconductor chip 19 is placed between the gas inlet 13 and the gas outlet 15. By doing so, the semiconductor chip 19 is placed in the gas flow path, and the plasma density around the semiconductor chip 19 can be increased.

  The product type corresponding jig 17 includes a plurality of product type corresponding jigs 17, and an arbitrary product type corresponding jig 17 is detachably attached thereto. Thereby, even if the semiconductor chip 19 has a plurality of types of shapes, a dedicated jig optimal for each shape can be used, and gas can be intensively induced in the semiconductor chip 19.

  The groove 101 has a structure in which gas is introduced from one of two opposing surfaces and gas is discharged from the other surface. By doing so, the semiconductor chip 19 accommodated in the groove 101 is disposed in the gas flow path, and the gas can be intensively induced in the semiconductor chip 19.

  The semiconductor chip 19 is provided on the substrate 21 via solder balls. The plasma processing apparatus 1 is configured such that the semiconductor chip 19 is accommodated inside the groove 101, with the bottom surface of the product type corresponding jig 17 being in contact with or close to the substrate 21 protruding from the semiconductor chip 19. Yes. As shown in FIG. 2B, the opening surface of the groove 101 is provided on the same surface as the joint surface between the product type corresponding jig 17 and the substrate 21. Thereby, gas can be intensively induced at the junction between the semiconductor chip 19 and the substrate 21. Therefore, the plasma density around the joint between the semiconductor chip 19 and the substrate 21 can be increased, and the joint between the semiconductor chip 19 and the substrate 21 can be efficiently cleaned.

  A semiconductor device including the substrate 21 and the semiconductor chip 19 is manufactured as follows. The semiconductor chip 19 is provided with a large number of solder balls. A flux is applied to the surface of the semiconductor chip including the solder balls and brought into contact with the substrate 21. Since eutectic solder is connected to the substrate surface, reflowing melts the solder and connects the semiconductor chip 19 and the substrate 21.

  As shown in FIG. 2B, the product type corresponding jig 17 has a hole (mounting component relief 103) so as not to contact the mounting component portion of the plasma cleaning apparatus 1 of the present embodiment. . An example of the mounted component includes a chip capacitor. The mounting component Nige 103 is provided on the bottom surface of the product type corresponding jig 17. As described above, the product type corresponding jig 17 may have a structure that matches the shape of the plasma cleaning apparatus 1 of the present embodiment as long as the gas flow path can be narrowed down only to the periphery of the semiconductor chip 19. .

  The gas discharge port 15 is connected to a vacuum suction device (not shown). By driving the vacuum suction device, the gas in the vacuum chamber 11 is discharged through the gas discharge port 15. Thereby, the inside of the vacuum chamber 11 can be made into a vacuum state.

  The gas inlet 13 switches and supplies any one of an inert gas, a reducing gas, and an oxidizing gas. The gas inlet 13 is connected to various gas supply devices. Examples of the gas supplied by the gas supply device include a gas that generates plasma and a leak gas. Plasma can be generated by using an inert gas, a reducing gas, or an oxidizing gas. For example, argon gas can be used as the inert gas. Moreover, as reducing gas, nitrogen gas, hydrogen gas, or ammonia gas can be used, for example. As the oxidizing gas, oxygen gas, ozone gas, nitrogen monoxide, nitrogen dioxide, carbon monoxide, carbon dioxide, or the like can be used. Nitrogen gas can be used as the leakage gas.

  The semiconductor chip 19 and the substrate 21 temporarily bonded by melting the solder are completely bonded by injecting the underfill resin. When the underfill resin is injected, if the flux is not removed, the resin flowability is deteriorated. Therefore, in the apparatus according to the present embodiment, oxygen gas can be supplied into the vacuum chamber via the gas inlet 13 to perform plasma processing. According to the plasma treatment using oxygen gas, highly polar oxygen ions and oxygen radicals adhere to the junction between the semiconductor chip 19 and the substrate 21. Since the chemical application action of oxygen ions / oxygen radicals works, the flowability of the resin is improved.

  Various gases are introduced from the gas inlet 13 via a switching valve (not shown). Therefore, a plurality of types of gases can be switched and supplied into the vacuum chamber 11. Further, since the semiconductor chip 19 is provided in the product type corresponding jig 17 optimized according to the size, by appropriately adjusting the vacuum suction device and the gas supply device, different types of gases can be quickly switched. be able to.

  The electrode of the plasma cleaning apparatus 1 of the present embodiment is composed of an upper electrode 25 and a lower electrode 23 that are opposed to each other in the vertical direction in the vacuum chamber 11, and the semiconductor chip 19 is placed on the negatively charged lower electrode 23. Placed.

  The upper electrode 25 and the lower electrode 23 are provided facing the vacuum chamber 11 in the vertical direction, thereby generating a plasma space between the upper electrode 25 and the lower electrode 23. The lower electrode 23 also serves as a mounting portion, and the semiconductor chip 19 is mounted on the lower electrode 23.

  The upper electrode 25 and the lower electrode 23 are connected to a high frequency power source (not shown). A high frequency voltage is applied to the upper electrode 25 between the upper electrode 25 and the lower electrode 23 by driving a high frequency power source. By making the inside of the vacuum chamber 11 into a vacuum state and supplying a gas for plasma reaction, plasma is generated and a plasma space can be generated in the vacuum chamber 11 and the groove 101. Since positive ions (argon ions or oxygen plasma) in the plasma are attracted to the negatively charged lower electrode, they collide with the junction between the semiconductor chip 19 and the substrate 21 and scrape off impurities such as flux to be cleaned. It will be.

  After the plasma cleaning, the gas supply device is switched, and the leakage gas is supplied into the vacuum chamber 11 through the gas inlet 13. Thereby, the inside of the vacuum chamber 11 can be returned to normal pressure.

  When a plasma space is generated between the upper electrode 25 and the lower electrode 23, the gas inlet 13 can switch the supply of a plurality of types of gases. Thereby, different types of plasma treatment can be performed by one apparatus. In the case of a conventional plasma cleaning apparatus, it takes a long time to replace the gas in the vacuum chamber 11. In this embodiment, a gas flow path is formed using the product type corresponding jig 17, and the semiconductor chip 19 is placed in the gas flow path. Therefore, the gas around the semiconductor chip 19 can be replaced quickly.

  Subsequently, a process of cleaning the semiconductor device including the substrate 21 and the semiconductor chip 19 using the plasma cleaning apparatus 1 of the present embodiment will be described with reference to FIG.

  The semiconductor chip 19 is mounted on the substrate 21 by a flip chip method (FIG. 3A). The semiconductor chip 19 is soldered to the substrate 21 using a flux.

A product corresponding jig 17 matching the size of the semiconductor chip 19 is attached to the plasma cleaning apparatus 1 and the semiconductor chip 19 is accommodated in the groove 101 (FIG. 3B).

  Subsequently, the vacuum suction device is driven to discharge the air in the vacuum chamber 11 from the gas discharge port 15 to make the vacuum chamber 11 in a vacuum state. Thereafter, argon gas is supplied from the gas inlet 13 and the high frequency power source is driven to apply a high frequency voltage between the lower electrode 23 and the upper electrode 25. As a result, plasma is generated in the vacuum chamber 11 and in the groove 101, and the junction between the semiconductor chip 19 and the substrate 21 is exposed to the argon plasma atmosphere 31 (FIG. 3C). Thereby, the junction part of the semiconductor chip 19 and the board | substrate 21 is wash | cleaned by argon ion.

  After a certain period of time, the gas supply device is switched to introduce oxygen gas into the vacuum chamber 11 from the gas inlet 13. A high frequency voltage is applied between the lower electrode 23 and the upper electrode 25 to expose the junction between the semiconductor chip 19 and the substrate 21 to the oxygen plasma atmosphere 33. Thereby, the junction is cleaned by oxygen ions or oxygen radicals generated by the oxygen plasma (FIG. 3D).

  Further, after a certain time has elapsed, the driving of the high-frequency voltage and the vacuum suction device is stopped. The gas supply is switched, and nitrogen gas is supplied from the gas inlet 13 into the vacuum chamber 11. Thereafter, the inside of the vacuum chamber 11 is returned to normal pressure with nitrogen gas, and the plasma cleaning process is completed.

  Thereafter, an underfill resin 35 is injected into the joint between the semiconductor chip 19 and the substrate 21 to cure the resin (FIG. 3E).

  Then, the effect of this embodiment is demonstrated.

  The plasma cleaning apparatus 1 according to the present embodiment includes a gas inlet 13 and a gas outlet 15 and converts the gas supplied from the gas inlet 13 into plasma to plasma process the semiconductor chip 19. According to this apparatus, by providing the product corresponding jig 17 serving as a shielding member that shields the upper space of the semiconductor chip 19, the gas supplied from the gas inlet 13 is guided to the semiconductor chip 19. The surrounding plasma density can be stably increased. As a result, the semiconductor chip 19 can be intensively plasma processed, and the plasma processing can be performed efficiently in a short time.

  Further, by providing the product type corresponding jig 17, the gas supplied from the gas inlet 13 can be guided to the semiconductor chip 19, and gas exchange around the semiconductor chip 19 is facilitated. Therefore, it is possible to efficiently perform plasma cleaning using a plurality of types of gases in a short time by switching the gas to be used.

  In this embodiment, the semiconductor chip 19 can be accommodated in the groove 101 serving as a gas flow path. Thereby, the gas for generating plasma can be intensively flowed around the semiconductor chip 19. Therefore, the plasma density around the semiconductor chip 19 can be stably increased, and the semiconductor chip 19 can be intensively cleaned.

  The semiconductor chip 19 provided on the substrate 21 is disposed on the lower electrode 23. Also, the product type corresponding jig 17 is provided on the substrate 21 protruding from the semiconductor chip 19, so that only the semiconductor chip 19 and the junction between the semiconductor chip 19 and the substrate 21 are accommodated in the product type corresponding jig 17. It will be. Therefore, the generated charged plasma is attracted by the lower electrode 23 and adheres to the junction between the semiconductor chip 19 and the substrate 21. For example, when argon gas is used, the lower electrode 23 is negatively charged, whereby positive argon ions are attracted to the lower electrode 23. Thereby, the junction part of the semiconductor chip 19 and the board | substrate 21 can be cleaned efficiently.

  When performing flux cleaning with a conventional liquid, a drying step is required. Therefore, there is a problem that the apparatus is increased in size, takes a long cleaning time, increases the number of processes, and leads to an increase in cost. Further, if the liquid cleaning is replaced with plasma processing, in the conventional plasma processing apparatus, since the gas flow is not aimed at the semiconductor chip, it takes time and also leads to an increase in cost.

  On the other hand, by using the plasma cleaning apparatus 1 of the present embodiment, the joint between the semiconductor chip 19 and the substrate 21 can be cleaned intensively. Accordingly, impurities such as flux adhering to the joint between the semiconductor chip 19 and the substrate 21 can be intensively cleaned, so that conventional liquid flux cleaning can be replaced with plasma cleaning. Therefore, the drying process required for the liquid flux cleaning can be omitted, and the flux cleaning process can be simplified.

  In addition, when flux cleaning is performed using conventional plasma processing, in order to perform oxygen plasma processing for improving the wettability of the underfill resin, plasma processing is performed by switching the flux cleaning gas to oxygen gas. It will be necessary. In the conventional plasma processing apparatus, since the gas flow is not aimed at the semiconductor chip, there is a problem that it takes more time to switch the gas.

  On the other hand, according to the plasma cleaning apparatus 1 of the present embodiment, the semiconductor chip 19 can be accommodated in the gas flow path by using the product type corresponding jig 17. Therefore, since the gas around the semiconductor chip 19 can be easily exchanged, different types of plasma cleaning can be performed quickly by switching the type of gas introduced during the plasma cleaning. Thereby, plasma cleaning for removing impurities such as flux and oxygen plasma treatment for improving the underfill resin wettability of the substrate surface can be performed with one apparatus. Therefore, flux cleaning and underfill resin wettability improvement can be realized efficiently in a short time.

As mentioned above, although embodiment of this invention was described with reference to drawings, these are the illustrations of this invention, Various structures other than the above are also employable.
In the present embodiment, the block in which the groove is formed is illustrated as the shielding member, but the shape and material of the shielding member are not limited to this as long as the upper space of the element is shielded. By shielding the upper space on the gas supply port side in the upper space of the element, gas can be intensively induced toward the element. Further, by closing the entire upper space, the gas can be more effectively guided to the element.

  The present invention can also be applied to a multi-chip semiconductor device in which a plurality of semiconductor chips are mounted on a substrate. In this case, a shielding member provided with a plurality of grooves is used.

  FIG. 4 is a schematic view showing a modification of the shielding member used in the present invention. This shielding member can be used in place of the product corresponding jig 17 shown in FIG. FIG. 4A is a diagram showing the shielding member viewed from the same direction as FIG. FIG. 4B is a bottom view of the shielding member. FIG. 4C is a view of the shielding member viewed from the gas inlet 13 in FIG. In this modification, two semiconductor chips 19 are mounted on the substrate 21. Two grooves 101 are provided in the shielding member.

Conventionally, in the case of a complicated package such as a multichip, it has been necessary to produce a part having a complicated shape at a plurality of locations on the jig, leading to an increase in the cost of the shielding member. If the jig of the present invention is used, the shape may be such that only the semiconductor chip and the mounted component escape. Thus, the present invention can be applied to various types of semiconductor devices such as a multichip by appropriately designing the shielding member.
The present invention can also apply the following configurations.
(1)
A plasma processing chamber;
A gas supply port for supplying gas to the plasma processing chamber;
A gas outlet for discharging gas from the plasma processing chamber;
A placement unit disposed inside the plasma processing chamber for placing the element;
A shielding member that is disposed above the mounting portion and shields the upper space of the element from the gas supplied from the gas supply port, and guides the gas supplied from the gas supply port to the element; ,
A plasma processing apparatus comprising:
(2)
The plasma processing apparatus according to (1), wherein the shielding member blocks the entire space immediately above the element.
(3)
The shielding member is a block in which a groove portion serving as a gas flow path is formed, and is placed on the mounting portion with the groove portion facing downward,
The plasma processing apparatus according to (2), wherein the groove portion accommodates the element, and a gas is introduced into the groove portion.
(4)
The mounting portion includes an electrode for generating a plasma space in the plasma processing chamber,
The plasma processing apparatus according to any one of (1) to (3), wherein the element is placed on the electrode.
(5)
The said shielding member consists of a several shielding member, Arbitrary shielding members are attached so that attachment or detachment is possible, The plasma processing apparatus as described in (3) or (4) characterized by the above-mentioned.
(6)
The plasma processing apparatus according to any one of (1) to (5), wherein the gas supply port switches and supplies any one of an inert gas, a reducing gas, and an oxidizing gas.
(7)
The plasma processing apparatus according to (6), wherein the gas supplied from the gas supply port is any one of argon, hydrogen, and oxygen.
(8)
The element is a semiconductor chip provided on a substrate via a solder ball,
The plasma processing apparatus according to any one of (1) to (7), wherein the gas is induced to a joint between the substrate and the semiconductor chip.
(9)
The element is a semiconductor chip provided on a substrate via a solder ball,
The lower surface of the block is in contact with or close to the substrate overhanging the semiconductor chip;
(3) The plasma processing apparatus according to (3), wherein the semiconductor chip is accommodated in the groove.
(10)
(1) It is a manufacturing method of a semiconductor device provided with the element using the plasma processing apparatus in any one of (9),
A method for manufacturing a semiconductor device, comprising: mounting the element on the mounting portion; and introducing a gas into the plasma processing chamber to plasma process the element.
(11)
The element is a semiconductor chip soldered to a substrate using a flux,
Plasma treatment of the junction between the semiconductor chip and the substrate using an inert gas or a reducing gas;
Plasma-treating the joint using an oxidizing gas;
Including
The method for manufacturing a semiconductor device according to (10), wherein the flux adhering to the joint is washed.

It is sectional drawing which represented typically the plasma processing apparatus which concerns on embodiment. It is the schematic diagram showing the shielding member with which the plasma processing apparatus which concerns on embodiment is provided. FIG. 2A is a cross-sectional view of the shielding member. FIG. 2B is a bottom view of the shielding member. FIG. 2C is a side view of the shielding member. It is a figure explaining the manufacturing method of the semiconductor device using the plasma processing apparatus which concerns on embodiment. It is the schematic diagram showing the shielding member with which the plasma processing apparatus which concerns on embodiment is provided. FIG. 4A is a cross-sectional view of the shielding member. FIG. 4B is a bottom view of the shielding member. FIG. 4C is a side view of the shielding member. It is the schematic diagram showing the conventional washing | cleaning apparatus. It is the schematic diagram showing the conventional plasma processing apparatus.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 Plasma cleaning apparatus 11 Vacuum chamber 13 Gas inlet 15 Gas outlet 17 Variety corresponding jig 19 Semiconductor chip 21 Substrate 23 Lower electrode 25 Upper electrode 31 Argon plasma atmosphere 33 Oxygen plasma atmosphere 35 Underfill resin 81 Jig 83 Semiconductor chip 85 Substrate 91 Vacuum chamber 93 Gas inlet 95 Gas outlet 101 Groove 103 Nige

Claims (11)

A plasma processing chamber;
A gas supply port for supplying gas to the plasma processing chamber;
A gas outlet for discharging gas from the plasma processing chamber;
A placement unit disposed inside the plasma processing chamber for placing the element;
A shielding member that is disposed above the mounting portion and shields the upper space of the element from the gas supplied from the gas supply port, and guides the gas supplied from the gas supply port to the element; ,
Equipped with a,
The shielding member closes the entire space directly above the element;
The shielding member is a block in which a groove portion serving as a gas flow path is formed, and is placed on the mounting portion with the groove portion facing downward,
The said groove part accommodates the said element, Gas is introduce | transduced into the said groove part, The plasma processing apparatus characterized by the above-mentioned .   A plasma processing chamber;
  A gas supply port for supplying gas to the plasma processing chamber;
  A gas outlet for discharging gas from the plasma processing chamber;
  A placement unit disposed inside the plasma processing chamber for placing the element;
  A shielding member that is disposed above the mounting portion and shields the upper space of the element from the gas supplied from the gas supply port, and guides the gas supplied from the gas supply port to the element; ,
With
  The mounting portion includes an electrode for generating a plasma space in the plasma processing chamber,
  The element is mounted on the electrode;
  The said shielding member consists of a several shielding member, Arbitrary shielding members are attached detachably, The plasma processing apparatus characterized by the above-mentioned. The plasma processing apparatus according to claim 2 , wherein the shielding member blocks the entire space immediately above the element. The mounting portion includes an electrode for generating a plasma space in the plasma processing chamber,
The plasma processing apparatus according to claim 1, wherein said element that is placed on the electrode. The shielding member multiple consists shielding member, the plasma processing apparatus according to claim 1 or 4 further characterized in that any of the shielding member is detachably attached.   6. The plasma processing apparatus according to claim 1, wherein the gas supply port switches and supplies any one of an inert gas, a reducing gas, and an oxidizing gas.   The plasma processing apparatus according to claim 6, wherein the gas supplied from the gas supply port is any one of argon, hydrogen, and oxygen. The element is a semiconductor chip provided on a substrate via a solder ball,
The plasma processing apparatus according to claim 1, wherein the gas is induced to a joint portion between the substrate and the semiconductor chip. The element is a semiconductor chip provided on a substrate via a solder ball,
The lower surface of the block is in contact with or close to the substrate overhanging the semiconductor chip;
The plasma processing apparatus according to claim 1, characterized in that it is configured such that the semiconductor chip is accommodated inside the groove. A method for manufacturing a semiconductor device comprising an element using the plasma processing apparatus according to claim 1,
A method for manufacturing a semiconductor device, comprising: mounting the element on the mounting portion; and introducing a gas into the plasma processing chamber to plasma process the element. The element is a semiconductor chip soldered to a substrate using a flux,
Plasma treatment of the junction between the semiconductor chip and the substrate using an inert gas or a reducing gas;
Plasma-treating the joint using an oxidizing gas;
Including
The method of manufacturing a semiconductor device according to claim 10, wherein the flux adhering to the joint is washed.

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