JP5065433B2 - 波長同調可能な照明システム - Google Patents
波長同調可能な照明システム Download PDFInfo
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- 230000005855 radiation Effects 0.000 claims description 172
- 239000000835 fiber Substances 0.000 claims description 36
- 230000003287 optical effect Effects 0.000 claims description 34
- 238000005286 illumination Methods 0.000 claims description 31
- 230000003595 spectral effect Effects 0.000 claims description 30
- 238000000034 method Methods 0.000 claims description 25
- 238000001228 spectrum Methods 0.000 claims description 9
- 230000002123 temporal effect Effects 0.000 claims description 8
- 238000001914 filtration Methods 0.000 claims description 7
- 230000000704 physical effect Effects 0.000 claims description 6
- 230000002411 adverse Effects 0.000 claims description 5
- 230000000903 blocking effect Effects 0.000 claims description 2
- 230000001902 propagating effect Effects 0.000 claims description 2
- 239000000758 substrate Substances 0.000 description 41
- 238000000059 patterning Methods 0.000 description 23
- 235000012431 wafers Nutrition 0.000 description 20
- 239000004038 photonic crystal Substances 0.000 description 14
- 230000008569 process Effects 0.000 description 11
- 238000001459 lithography Methods 0.000 description 8
- 238000010586 diagram Methods 0.000 description 7
- 239000013078 crystal Substances 0.000 description 6
- 230000005670 electromagnetic radiation Effects 0.000 description 6
- 239000010410 layer Substances 0.000 description 5
- 238000004590 computer program Methods 0.000 description 4
- 230000006870 function Effects 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 230000007246 mechanism Effects 0.000 description 4
- 229910052691 Erbium Inorganic materials 0.000 description 3
- 238000013461 design Methods 0.000 description 3
- 239000006185 dispersion Substances 0.000 description 3
- 238000009826 distribution Methods 0.000 description 3
- UYAHIZSMUZPPFV-UHFFFAOYSA-N erbium Chemical compound [Er] UYAHIZSMUZPPFV-UHFFFAOYSA-N 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 230000015654 memory Effects 0.000 description 3
- 230000000737 periodic effect Effects 0.000 description 3
- 230000010287 polarization Effects 0.000 description 3
- 238000003860 storage Methods 0.000 description 3
- 239000006098 acoustic absorber Substances 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 239000011159 matrix material Substances 0.000 description 2
- 230000010363 phase shift Effects 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 230000003068 static effect Effects 0.000 description 2
- 238000012546 transfer Methods 0.000 description 2
- 238000001069 Raman spectroscopy Methods 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000002159 abnormal effect Effects 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 238000003491 array Methods 0.000 description 1
- 230000002238 attenuated effect Effects 0.000 description 1
- 230000001427 coherent effect Effects 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- 210000001520 comb Anatomy 0.000 description 1
- 238000013500 data storage Methods 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 230000009977 dual effect Effects 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 238000007654 immersion Methods 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 230000002452 interceptive effect Effects 0.000 description 1
- 239000002346 layers by function Substances 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 230000005381 magnetic domain Effects 0.000 description 1
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 1
- 229910052753 mercury Inorganic materials 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 238000003909 pattern recognition Methods 0.000 description 1
- 239000011295 pitch Substances 0.000 description 1
- 230000000644 propagated effect Effects 0.000 description 1
- 238000005086 pumping Methods 0.000 description 1
- 210000001747 pupil Anatomy 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000002310 reflectometry Methods 0.000 description 1
- 238000007493 shaping process Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000004071 soot Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
- H01L21/02299—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment
- H01L21/0231—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment treatment by exposure to electromagnetic radiation, e.g. UV light
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70058—Mask illumination systems
- G03F7/70141—Illumination system adjustment, e.g. adjustments during exposure or alignment during assembly of illumination system
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/11—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on acousto-optical elements, e.g. using variable diffraction by sound or like mechanical waves
- G02F1/116—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on acousto-optical elements, e.g. using variable diffraction by sound or like mechanical waves using an optically anisotropic medium, wherein the incident and the diffracted light waves have different polarizations, e.g. acousto-optic tunable filter [AOTF]
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B11/00—Measuring arrangements characterised by the use of optical techniques
- G01B11/14—Measuring arrangements characterised by the use of optical techniques for measuring distance or clearance between spaced objects or spaced apertures
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70058—Mask illumination systems
- G03F7/70191—Optical correction elements, filters or phase plates for controlling intensity, wavelength, polarisation, phase or the like
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
- G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
- G03F9/7065—Production of alignment light, e.g. light source, control of coherence, polarization, pulse length, wavelength
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
- H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
- H01L21/0274—Photolithographic processes
- H01L21/0275—Photolithographic processes using lasers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/68—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for positioning, orientation or alignment
- H01L21/681—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for positioning, orientation or alignment using optical controlling means
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- General Physics & Mathematics (AREA)
- Nonlinear Science (AREA)
- Engineering & Computer Science (AREA)
- Optics & Photonics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Electromagnetism (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Description
結論
Claims (15)
- 放射を回折させる複数のアライメントターゲットを有するウェーハを位置合わせするためのウェーハアライメントシステムであって、
狭帯域放射を、連続する平らな広帯域放射であって点光源放射を提供するために回折限界点に集束する広帯域放射に変換する放射源と、
前記広帯域放射を狭帯域直線偏光放射にフィルタリングして前記ウェーハの位置合わせを可能とする音響学的波長可変狭通過帯域フィルタと、
前記音響学的波長可変狭通過帯域フィルタに接続され、前記狭帯域直線偏光放射のプロファイルを調整し、前記ウェーハの少なくとも1つのアライメントターゲットに集束して前記ウェーハの前記位置合わせを可能にする調整された放射ビームを生成するインターフェースと、を備え、
前記狭帯域直線偏光放射のプロファイルは、前記狭帯域直線偏光放射により照明される際により高い次数の回折を提供するために、前記ウェーハの前記少なくとも1つの前記アライメントターゲットの1以上の物理的特性に基づき調整され、
前記連続する平らな広帯域放射は、前記狭帯域放射の空間的コヒーレンスと実質的に類似の空間的コヒーレンスであって、比較的低い時間的コヒーレンスを有する、
ウェーハアライメントシステム。 - 前記フィルタが前記放射源によって生成される放射の強度および波長を変調する、請求項1に記載のシステム。
- 前記フィルタが複数の同時通過帯域を有する、請求項1に記載のシステム。
- 前記放射源が、繰返し率が高い高強度短パルス放射を生成するファイバ増幅器を備えた、請求項1に記載のシステム。
- 前記フィルタが音響光学波長可変フィルタ(AOTF)である、請求項1に記載のシステム。
- 前記フィルタが、ブラッグ回折させる体積媒体を備えた、請求項1に記載のシステム。
- リソグラフィ装置内でウェーハを位置合わせする方法であって、
第1の高強度短パルス放射を生成する工程と、
第2の連続する広い平らなスペクトル放射であって、点光源放射を提供するために回折限界点に集束するスペクトル放射を生成するために前記第1の放射を、非線形デバイスを通して伝搬させる工程と、
狭帯域直線偏光放射を生成するために前記第2の放射を音響学的にフィルタリングして前記ウェーハの位置合わせを可能とする工程と、
前記ウェーハの少なくとも1つのアライメントターゲットに集束して前記ウェーハの前記位置合わせを可能にする調整された放射ビームを生成するために前記狭帯域直線偏光放射のプロファイルを調整する工程と、
前記ウェーハの前記位置合わせを可能にするために前記アライメントターゲットを前記調整された放射ビームで照明する工程と、を備え、
前記狭帯域直線偏光放射のプロファイルは、前記狭帯域直線偏光放射により照明される際により高い次数の回折を提供するために、前記ウェーハの前記少なくとも1つの前記アライメントターゲットの1以上の物理的特性に基づき調整され、
前記第2の連続する平らなスペクトル放射は、前記狭帯域放射の空間的コヒーレンスと実質的に類似の空間的コヒーレンスであって、比較的低い時間的コヒーレンスを有する、
方法。 - 前記フィルタリングする工程が、第2の放射の強度および波長を変調する工程を含む、請求項7に記載の方法。
- 前記フィルタリングする工程が、複数の同時通過帯域フィルタを生成する工程を含む、請求項7に記載の方法。
- 狭帯域放射を、連続する平らな広帯域放射であって点光源放射を提供するために回折限界点に集束する広帯域放射に変換する放射源と、
前記広帯域放射を、ウェーハのアライメントターゲット上に集束して前記ウェーハの位置合わせを可能にする狭帯域直線偏光放射にフィルタリングする音響学的波長可変狭通過帯域フィルタと、
前記音響学的波長可変狭通過帯域フィルタに接続され、前記狭帯域直線偏光放射のプロファイルを調整し、前記ウェーハの少なくとも1つのアライメントターゲットに集束して前記ウェーハの前記位置合わせを可能にする調整された放射ビームを生成するインターフェースと、を備え、
前記狭帯域直線偏光放射のプロファイルは、前記狭帯域直線偏光放射により照明される際により高い次数の回折を提供するために、前記ウェーハの前記少なくとも1つの前記アライメントターゲットの1以上の物理的特性に基づき調整され、
前記連続する平らな広帯域放射は、前記狭帯域放射の空間的コヒーレンスと実質的に類似の空間的コヒーレンスであって、比較的低い時間的コヒーレンスを有する、
照明システム。 - 前記フィルタが前記放射源によって生成される放射の強度および波長を変調する、請求項10に記載のシステム。
- 前記フィルタが複数の同時通過帯域を有する、請求項10に記載のシステム。
- 前記放射源が、繰返し率が高い高強度短パルス放射を生成するファイバ増幅器を備えた、請求項10に記載のシステム。
- 狭帯域放射を、連続する平らな広帯域放射であって点光源放射を提供するために回折限界点に集束する広帯域放射に変換する放射源と、前記放射源により提供された連続する広いスペクトルレンジにわたって所望の狭帯域波長に同調させることができる照明源と、を備えたアライメントシステムであって、前記照明源が、
利用可能なスペクトル同調レンジ内における最大2〜3ナノメートルまたは数ナノメートルの広さの所望の波長設定点のみを選択する波長可変フィルタであって、ウェーハ上のアライメントマークの位置を検出し、前記アライメントマークを使用して前記ウェーハを位置合わせするためのアライメントに悪影響を及ぼさないレベルまで帯域外波長を阻止することによって前記所望の波長設定点のみを選択する波長可変フィルタと、
前記照明源の前記連続する広いスペクトルレンジをカバーする光学システムであって、前記アライメントマークが、アライメントマーク信号が所定の許容可能閾値より大きくなる比較的狭いスペクトル帯域を有し、前記所望の波長設定点が前記比較的狭いスペクトル帯域に実質的に整合する光学システムと、を含み、
前記波長可変フィルタが、スペクトルフィルタのライブラリであり、
前記照明源が、広範囲の離散波長設定点を提供する広帯域源であり、
前記連続する平らな広帯域放射は、前記狭帯域放射の空間的コヒーレンスと実質的に類似の空間的コヒーレンスであって、比較的低い時間的コヒーレンスを有する、
アライメントシステム。 - 前記波長可変フィルタが、約450nm〜2500nmの利用可能なスペクトル同調レンジの間に存在しているスペクトルギャップ中か、あるいは所与の状態の利用可能離散波長設定点外のいずれかに存在している波長の選択を可能にしている、請求項14に記載のアライメントシステム。
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US16809509P | 2009-04-09 | 2009-04-09 | |
US61/168,095 | 2009-04-09 |
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US (3) | US8508736B2 (ja) |
JP (1) | JP5065433B2 (ja) |
KR (1) | KR101097232B1 (ja) |
CN (1) | CN101893825B (ja) |
NL (1) | NL2004400A (ja) |
TW (1) | TWI433213B (ja) |
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NL2004400A (en) | 2009-04-09 | 2010-10-12 | Asml Holding Nv | Tunable wavelength illumination system. |
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CN103777476B (zh) * | 2012-10-19 | 2016-01-27 | 上海微电子装备有限公司 | 一种离轴对准系统及对准方法 |
CN103033493B (zh) * | 2012-12-10 | 2015-08-05 | 厦门大学 | 一种可调谐荧光定量pcr检测系统 |
US9575209B2 (en) * | 2012-12-22 | 2017-02-21 | Halliburton Energy Services, Inc. | Remote sensing methods and systems using nonlinear light conversion and sense signal transformation |
US9304403B2 (en) | 2013-01-02 | 2016-04-05 | Taiwan Semiconductor Manufacturing Company, Ltd. | System and method for lithography alignment |
CN105339844B (zh) * | 2013-05-21 | 2019-04-26 | Asml荷兰有限公司 | 检查方法和设备、用于在其中使用的衬底及器件制造方法 |
CN203763761U (zh) | 2014-04-10 | 2014-08-13 | 张仲甫 | 拉绳运动器结构 |
CN105388706B (zh) * | 2014-09-09 | 2018-03-02 | 上海微电子装备(集团)股份有限公司 | 自参考干涉对准系统 |
TWI558044B (zh) * | 2014-12-09 | 2016-11-11 | 國立清華大學 | 連續光譜產生裝置及其組裝方法 |
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-
2010
- 2010-03-16 NL NL2004400A patent/NL2004400A/en not_active Application Discontinuation
- 2010-03-30 TW TW099109700A patent/TWI433213B/zh active
- 2010-03-31 US US12/751,479 patent/US8508736B2/en active Active
- 2010-04-02 JP JP2010085601A patent/JP5065433B2/ja active Active
- 2010-04-07 CN CN2010101585527A patent/CN101893825B/zh active Active
- 2010-04-08 KR KR1020100032307A patent/KR101097232B1/ko active Active
-
2013
- 2013-05-21 US US13/898,973 patent/US8730476B2/en active Active
-
2014
- 2014-05-19 US US14/281,346 patent/US20140253891A1/en not_active Abandoned
Also Published As
Publication number | Publication date |
---|---|
TWI433213B (zh) | 2014-04-01 |
US8730476B2 (en) | 2014-05-20 |
US8508736B2 (en) | 2013-08-13 |
KR20100112537A (ko) | 2010-10-19 |
KR101097232B1 (ko) | 2011-12-21 |
TW201104727A (en) | 2011-02-01 |
JP2010245535A (ja) | 2010-10-28 |
NL2004400A (en) | 2010-10-12 |
US20140253891A1 (en) | 2014-09-11 |
CN101893825B (zh) | 2013-04-17 |
US20110085726A1 (en) | 2011-04-14 |
US20130258316A1 (en) | 2013-10-03 |
CN101893825A (zh) | 2010-11-24 |
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