JP5063755B2 - 誘導加熱装置および誘導加熱方法 - Google Patents
誘導加熱装置および誘導加熱方法 Download PDFInfo
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- JP5063755B2 JP5063755B2 JP2010178725A JP2010178725A JP5063755B2 JP 5063755 B2 JP5063755 B2 JP 5063755B2 JP 2010178725 A JP2010178725 A JP 2010178725A JP 2010178725 A JP2010178725 A JP 2010178725A JP 5063755 B2 JP5063755 B2 JP 5063755B2
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- 238000010438 heat treatment Methods 0.000 title claims description 279
- 230000006698 induction Effects 0.000 title claims description 90
- 238000000034 method Methods 0.000 title claims description 13
- 230000008878 coupling Effects 0.000 claims description 31
- 238000010168 coupling process Methods 0.000 claims description 31
- 238000005859 coupling reaction Methods 0.000 claims description 31
- 230000004907 flux Effects 0.000 claims description 21
- 238000004804 winding Methods 0.000 claims description 19
- 230000001419 dependent effect Effects 0.000 claims description 4
- 230000002093 peripheral effect Effects 0.000 claims description 4
- 239000000654 additive Substances 0.000 claims description 2
- 230000000996 additive effect Effects 0.000 claims description 2
- 230000001360 synchronised effect Effects 0.000 claims description 2
- 235000012431 wafers Nutrition 0.000 description 26
- 238000010586 diagram Methods 0.000 description 8
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 6
- 229910002804 graphite Inorganic materials 0.000 description 6
- 239000010439 graphite Substances 0.000 description 6
- 230000020169 heat generation Effects 0.000 description 5
- 239000002184 metal Substances 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 230000008569 process Effects 0.000 description 4
- 239000000758 substrate Substances 0.000 description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 239000003990 capacitor Substances 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 238000003475 lamination Methods 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 230000009471 action Effects 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 238000009529 body temperature measurement Methods 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 239000000498 cooling water Substances 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000005674 electromagnetic induction Effects 0.000 description 1
- 238000010304 firing Methods 0.000 description 1
- 230000014509 gene expression Effects 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 239000003870 refractory metal Substances 0.000 description 1
- 229910000859 α-Fe Inorganic materials 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B6/00—Heating by electric, magnetic or electromagnetic fields
- H05B6/02—Induction heating
- H05B6/06—Control, e.g. of temperature, of power
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67109—Apparatus for thermal treatment mainly by convection
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B6/00—Heating by electric, magnetic or electromagnetic fields
- H05B6/02—Induction heating
- H05B6/10—Induction heating apparatus, other than furnaces, for specific applications
- H05B6/105—Induction heating apparatus, other than furnaces, for specific applications using a susceptor
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B6/00—Heating by electric, magnetic or electromagnetic fields
- H05B6/02—Induction heating
- H05B6/36—Coil arrangements
- H05B6/44—Coil arrangements having more than one coil or coil segment
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- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Engineering & Computer Science (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- General Induction Heating (AREA)
Description
熱処理装置10は、ウエハ54と水平配置されたサセプタ52を垂直方向に多段に積層配置したボート50と、サセプタ52を加熱する誘導加熱コイル(詳細を後述する主加熱コイル30、従属加熱コイル32,34、逆結合コイル36,38)、および誘導加熱コイルに電力を供給する電源部12とを基本として構成される。
Claims (3)
- 水平配置され、かつ垂直方向に複数積層配置されたサセプタの外周側に配置され、前記サセプタにおける被加熱物載置面と巻回の中心軸を平行とし、前記サセプタの配置方向に沿って隣接して段積みされ、その巻回方向を同一とし、少なくとも水平方向、および垂直方向に磁束を放射して、電磁的に結合する複数の誘導加熱コイルと、
隣接配置された複数の前記誘導加熱コイルのそれぞれに投入する、周波数および位相が調整された電流の向きが同じになるように接続された複数のインバータと、
隣接配置される前記複数の誘導加熱コイルに対して、前記インバータを介して投入する電流の周波数を一致させると共に、電流の位相を同期させ、その電力割合を個別に制御するゾーンコントロール手段と、を有する誘導加熱装置であって、
前記誘導加熱コイルは、少なくとも1つの主加熱コイルと、前記主加熱コイルに電磁的に結合すると共に前記主加熱コイルを積層方向に挟み込むように対を成して設けられる従属加熱コイルとから成り、前記主加熱コイルには直列に、前記従属加熱コイルとの間に生ずる相互インダクタンスと逆極性の相互インダクタンスを生じさせる逆結合コイルが接続され、
前記サセプタ配置側を先端として定め、前記主加熱コイルを巻回させる主加熱コイルコアと、
前記サセプタ配置側を先端として定め、当該先端側に前記従属加熱コイルを巻回させると共に、後端側に前記逆結合コイルを巻回させる従属加熱コイルコアとを備えることを特徴とする誘導加熱装置。 - 前記逆結合コイルは、前記従属加熱コイルコアの先端側に巻回された前記従属加熱コイルに対して、加極性の関係を持つように構成されることを特徴とする請求項1に記載の誘導加熱装置。
- 水平配置され、かつ垂直方向に複数積層配置されたサセプタに配置された被加熱物を誘導加熱する方法であって、
前記サセプタにおける被加熱物載置面と巻回の中心軸を平行とし、かつ巻回方向を同一とし、少なくとも水平方向、および垂直方向に磁束を放射して、電磁的に結合する複数の誘導加熱コイルを前記サセプタの積層方向に沿って隣接して段積みした上で、隣接する前記誘導加熱コイルに対して、周波数、向きを一致させると共に位相を同期させた電流を投入し、
前記誘導加熱コイルは、少なくとも1つの主加熱コイルと、前記主加熱コイルに電磁的に結合すると共に前記主加熱コイルを積層方向に挟み込むように対を成して設けられる従属加熱コイルとを定め、前記主加熱コイルには直列に、前記従属加熱コイルとの間に生ずる相互インダクタンスと逆極性の相互インダクタンスを生じさせる逆結合コイルが接続し、
前記誘導加熱コイルのそれぞれに投入する電力割合を個別に制御し、
前記主加熱コイルは、前記サセプタ配置側を先端として定めた主加熱コイルコアに巻回させ、
前記従属加熱コイルは、前記サセプタ配置側を先端として定めた従属加熱コイルコアの前記先端側に巻回させ、
前記逆結合コイルは、前記従属加熱コイルコアの後端側に巻回させることを特徴とする誘導加熱方法。
Priority Applications (7)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2010178725A JP5063755B2 (ja) | 2010-08-09 | 2010-08-09 | 誘導加熱装置および誘導加熱方法 |
CN201180038790.7A CN103069921B (zh) | 2010-08-09 | 2011-07-28 | 感应加热装置及感应加热方法 |
PCT/JP2011/067346 WO2012020652A1 (ja) | 2010-08-09 | 2011-07-28 | 誘導加熱装置および誘導加熱方法 |
KR1020137002359A KR101429414B1 (ko) | 2010-08-09 | 2011-07-28 | 유도 가열장치 및 유도 가열방법 |
DE112011102681.1T DE112011102681B4 (de) | 2010-08-09 | 2011-07-28 | Induktionsheizvorrichtung und lnduktionsheizverfahren |
US13/816,198 US9173251B2 (en) | 2010-08-09 | 2011-07-28 | Induction heating apparatus and induction heating method |
US14/564,690 US9674898B2 (en) | 2010-08-09 | 2014-12-09 | Induction heating apparatus and induction heating method |
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JP2010178725A JP5063755B2 (ja) | 2010-08-09 | 2010-08-09 | 誘導加熱装置および誘導加熱方法 |
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JP2012038622A JP2012038622A (ja) | 2012-02-23 |
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US (2) | US9173251B2 (ja) |
JP (1) | JP5063755B2 (ja) |
KR (1) | KR101429414B1 (ja) |
CN (1) | CN103069921B (ja) |
DE (1) | DE112011102681B4 (ja) |
WO (1) | WO2012020652A1 (ja) |
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DE112011102681B4 (de) | 2023-12-28 |
WO2012020652A1 (ja) | 2012-02-16 |
US20130140298A1 (en) | 2013-06-06 |
DE112011102681T5 (de) | 2013-06-06 |
US20150090707A1 (en) | 2015-04-02 |
JP2012038622A (ja) | 2012-02-23 |
CN103069921B (zh) | 2015-06-03 |
US9173251B2 (en) | 2015-10-27 |
US9674898B2 (en) | 2017-06-06 |
KR101429414B1 (ko) | 2014-08-11 |
CN103069921A (zh) | 2013-04-24 |
KR20130033421A (ko) | 2013-04-03 |
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