JP5027183B2 - 光起電装置 - Google Patents
光起電装置 Download PDFInfo
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- JP5027183B2 JP5027183B2 JP2009090220A JP2009090220A JP5027183B2 JP 5027183 B2 JP5027183 B2 JP 5027183B2 JP 2009090220 A JP2009090220 A JP 2009090220A JP 2009090220 A JP2009090220 A JP 2009090220A JP 5027183 B2 JP5027183 B2 JP 5027183B2
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- carbon nanotube
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- nanotube film
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- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical group [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 134
- 239000002041 carbon nanotube Substances 0.000 claims description 105
- 229910021393 carbon nanotube Inorganic materials 0.000 claims description 105
- 239000002238 carbon nanotube film Substances 0.000 claims description 60
- 239000000758 substrate Substances 0.000 claims description 39
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 8
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 16
- 229910052710 silicon Inorganic materials 0.000 description 16
- 239000010703 silicon Substances 0.000 description 16
- 239000000463 material Substances 0.000 description 7
- 238000006243 chemical reaction Methods 0.000 description 6
- 239000000969 carrier Substances 0.000 description 4
- 239000003054 catalyst Substances 0.000 description 4
- 239000007789 gas Substances 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 3
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical group OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 3
- 230000007547 defect Effects 0.000 description 3
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 2
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 239000002079 double walled nanotube Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000003960 organic solvent Substances 0.000 description 2
- 230000001681 protective effect Effects 0.000 description 2
- 230000027756 respiratory electron transport chain Effects 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- 239000002109 single walled nanotube Substances 0.000 description 2
- 239000004215 Carbon black (E152) Substances 0.000 description 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- -1 acetylene Chemical class 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- HSFWRNGVRCDJHI-UHFFFAOYSA-N alpha-acetylene Natural products C#C HSFWRNGVRCDJHI-UHFFFAOYSA-N 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 229910003481 amorphous carbon Inorganic materials 0.000 description 1
- 238000001241 arc-discharge method Methods 0.000 description 1
- 239000012298 atmosphere Substances 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 125000002534 ethynyl group Chemical group [H]C#C* 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 229930195733 hydrocarbon Natural products 0.000 description 1
- 150000002430 hydrocarbons Chemical class 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 239000011777 magnesium Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000002923 metal particle Substances 0.000 description 1
- 238000005272 metallurgy Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 239000002048 multi walled nanotube Substances 0.000 description 1
- 239000002071 nanotube Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000009987 spinning Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/10—Semiconductor bodies
- H10F77/16—Material structures, e.g. crystalline structures, film structures or crystal plane orientations
- H10F77/162—Non-monocrystalline materials, e.g. semiconductor particles embedded in insulating materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F10/00—Individual photovoltaic cells, e.g. solar cells
- H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F10/00—Individual photovoltaic cells, e.g. solar cells
- H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
- H10F10/16—Photovoltaic cells having only PN heterojunction potential barriers
- H10F10/164—Photovoltaic cells having only PN heterojunction potential barriers comprising heterojunctions with Group IV materials, e.g. ITO/Si or GaAs/SiGe photovoltaic cells
- H10F10/165—Photovoltaic cells having only PN heterojunction potential barriers comprising heterojunctions with Group IV materials, e.g. ITO/Si or GaAs/SiGe photovoltaic cells the heterojunctions being Group IV-IV heterojunctions, e.g. Si/Ge, SiGe/Si or Si/SiC photovoltaic cells
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/10—Semiconductor bodies
- H10F77/12—Active materials
- H10F77/122—Active materials comprising only Group IV materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/10—Semiconductor bodies
- H10F77/14—Shape of semiconductor bodies; Shapes, relative sizes or dispositions of semiconductor regions within semiconductor bodies
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
Landscapes
- Photovoltaic Devices (AREA)
Description
本実施例において、単一の前記カーボンナノチューブ層141は、複数の、カーボンナノチューブが同じ方向に沿って配列されたカーボンナノチューブフィルムを含む。ここで、単一の前記カーボンナノチューブフィルムは、分子間力で端と端が接続された複数のカーボンナノチューブセグメント142を含む。図3を参照すると、単一の前記カーボンナノチューブセグメント142は、平行に配列された複数のカーボンナノチューブを含む。この場合、前記カーボンナノチューブ構造体の厚さは10nm〜100nmに設けられている。
本実施例において、単一の前記カーボンナノチューブ層141は、少なくとも一枚のカーボンナノチューブフィルムを含む。単一の前記カーボンナノチューブフィルムにおいて、前記複数のカーボンナノチューブは、等方的に配列されているか、所定の方向に沿って配列されているか、または、異なる複数の方向に沿って配列されている。前記カーボンナノチューブが前記カーボンナノチューブフィルムの表面と成す角度は0°〜15°である。前記角度が0°である場合、前記カーボンナノチューブは前記カーボンナノチューブフィルムの表面に平行に配列されている。この場合、前記カーボンナノチューブ構造体の厚さは0.5nm〜100μmに設けられている。
本実施例において、前記カーボンナノチューブ層141は複数のカーボンナノチューブヤーンを含む。前記カーボンナノチューブヤーンはカーボンナノチューブフィルムと比べて、より狭い幅を有する。前記カーボンナノチューブ層141において、前記複数のカーボンナノチューブヤーンが平行に配列されている。前記カーボンナノチューブヤーンを積層させて設置することもできる。ここで、隣接する前記カーボンナノチューブヤーンにおけるカーボンナノチューブは、0°〜90°の角度で交叉している。
本実施例において、前記カーボンナノチューブ構造体14において、少なくとも一つのカーボンナノチューブヤーンを含むカーボンナノチューブ層と、少なくとも一枚の前記カーボンナノチューブフィルムを含むカーボンナノチューブ層と、を含む。
記カーボンナノチューブ構造体14で吸収され、前記基板12と前記カーボンナノチューブ構造体14との界面に複数の可動キャリア(電子正孔対)が生じる。前記電子正孔対は複数の電子及び正孔に分離して形成する。前記正孔は前記基板12を透過して前記第一電極16に達すると、前記第一電極16で収集される。前記電子は、前記カーボンナノチューブ構造体14へ移動して前記第二電極18で収集される。これにより、
前記光起電装置10の外部回路に、電子流が形成されることができる。
12 基板
121 第一表面
122 第二表面
123 粒界
14 カーボンナノチューブ構造体
141 カーボンナノチューブ層
142 カーボンナノチューブセグメント
16 第一電極
18 第二電極
32 背面電極
34 シリコン基板
36 ドープシリコン層
38 前面電極
Claims (3)
- 基板と、
前記基板の一つの表面に設置されたカーボンナノチューブ構造体と、
前記基板の、前記カーボンナノチューブ構造体が設置された表面と反対側に設置された第一電極と、
を含み、
前記カーボンナノチューブ構造体が、少なくとも一つのカーボンナノチューブ層を含み、
前記カーボンナノチューブ層が、積層された複数のカーボンナノチューブフィルムを含み、
前記カーボンナノチューブフィルムが、複数のカーボンナノチューブからなり、
単一の前記カーボンナノチューブフィルムにおいて、前記カーボンナノチューブが分子間力で端と端で接続され、同じ方向に沿って平行に配列され、
隣接する前記カーボンナノチューブフィルムにおけるカーボンナノチューブが90°で交叉し、
前記基板が、多結晶シリコンを含むことを特徴とする光起電装置。 - 前記カーボンナノチューブ構造体が、直接前記基板に接着されたものであることを特徴とする、請求項1に記載の光起電装置。
- 単一の前記カーボンナノチューブフィルムにおける複数のカーボンナノチューブが、該カーボンナノチューブフィルムの表面に平行に配列されていることを特徴とする、請求項1に記載の光起電装置。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN200810066509.0 | 2008-04-03 | ||
CN200810066509.0A CN101552297B (zh) | 2008-04-03 | 2008-04-03 | 太阳能电池 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2009253296A JP2009253296A (ja) | 2009-10-29 |
JP5027183B2 true JP5027183B2 (ja) | 2012-09-19 |
Family
ID=41132141
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2009090220A Active JP5027183B2 (ja) | 2008-04-03 | 2009-04-02 | 光起電装置 |
Country Status (3)
Country | Link |
---|---|
US (1) | US20090250107A1 (ja) |
JP (1) | JP5027183B2 (ja) |
CN (1) | CN101552297B (ja) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101880035A (zh) | 2010-06-29 | 2010-11-10 | 清华大学 | 碳纳米管结构 |
CN102034880B (zh) * | 2010-11-10 | 2012-04-04 | 曾明生 | 一种高效太阳能光伏电池和一种高效太阳能光伏电池系统 |
CN104868838A (zh) * | 2014-12-12 | 2015-08-26 | 武汉绿鼎天舒科技发展有限公司 | 一种输出高电压的太阳能电池 |
CN104953944A (zh) * | 2014-12-13 | 2015-09-30 | 襄阳精圣科技信息咨询有限公司 | 一种使用推挽变换器的太阳能电池 |
CN104836525A (zh) * | 2014-12-13 | 2015-08-12 | 襄阳精圣科技信息咨询有限公司 | 一种太阳能电池 |
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JPH0795602B2 (ja) * | 1989-12-01 | 1995-10-11 | 三菱電機株式会社 | 太陽電池及びその製造方法 |
JPH05335614A (ja) * | 1992-06-03 | 1993-12-17 | Idemitsu Kosan Co Ltd | 光電変換素子 |
EP0969517B1 (en) * | 1998-07-04 | 2005-10-12 | International Business Machines Corporation | Electrode for use in electro-optical devices |
EP2298968A3 (en) * | 2000-08-22 | 2011-10-05 | President and Fellows of Harvard College | Method for growing nanowires |
NL1016779C2 (nl) * | 2000-12-02 | 2002-06-04 | Cornelis Johannes Maria V Rijn | Matrijs, werkwijze voor het vervaardigen van precisieproducten met behulp van een matrijs, alsmede precisieproducten, in het bijzonder microzeven en membraanfilters, vervaardigd met een dergelijke matrijs. |
US20040074531A1 (en) * | 2000-12-26 | 2004-04-22 | Fumio Matsui | Solar cell |
EP1378946A1 (en) * | 2001-03-19 | 2004-01-07 | Shin-Etsu Handotai Co., Ltd | Solar cell and its manufacturing method |
JP2003209270A (ja) * | 2002-01-15 | 2003-07-25 | Toyota Central Res & Dev Lab Inc | 炭素系光電素子およびその製造方法 |
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JP4162516B2 (ja) * | 2003-03-14 | 2008-10-08 | 三洋電機株式会社 | 光起電力装置 |
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CN100405617C (zh) * | 2006-12-29 | 2008-07-23 | 清华大学 | 基于碳纳米管薄膜的太阳能电池及其制备方法 |
-
2008
- 2008-04-03 CN CN200810066509.0A patent/CN101552297B/zh active Active
- 2008-12-19 US US12/339,359 patent/US20090250107A1/en not_active Abandoned
-
2009
- 2009-04-02 JP JP2009090220A patent/JP5027183B2/ja active Active
Also Published As
Publication number | Publication date |
---|---|
CN101552297A (zh) | 2009-10-07 |
US20090250107A1 (en) | 2009-10-08 |
JP2009253296A (ja) | 2009-10-29 |
CN101552297B (zh) | 2012-11-21 |
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