JP5024190B2 - IC module manufacturing method - Google Patents
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- JP5024190B2 JP5024190B2 JP2008146472A JP2008146472A JP5024190B2 JP 5024190 B2 JP5024190 B2 JP 5024190B2 JP 2008146472 A JP2008146472 A JP 2008146472A JP 2008146472 A JP2008146472 A JP 2008146472A JP 5024190 B2 JP5024190 B2 JP 5024190B2
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Description
この発明は、例えば非接触で通信する非接触ＩＣ媒体に用いられるＩＣモジュールを製造するようなＩＣモジュール製造方法に関する。 The present invention relates to, for example, IC module manufacturing how such as to produce an IC module used in a non-contact IC medium to communicate contactless.
従来、非接触ＩＣ媒体に用いられるＩＣモジュールを製造する方法として、電磁波読取可能なデータキャリアの製造方法が提案されている（特許文献１参照）。
この製造方法は、フィルム状などの配線基板の配線パターン上に半導体ベアチップを実装してなる電子部品モジュールを製造する工程で、超音波によりバンプと電極領域とを超音波接合させている。これにより、データキャリアを低コストに大量生産することができる。
Conventionally, as a method of manufacturing an IC module used for a non-contact IC medium, a method of manufacturing a data carrier capable of reading an electromagnetic wave has been proposed (see Patent Document 1).
This manufacturing method is a process of manufacturing an electronic component module in which a semiconductor bare chip is mounted on a wiring pattern of a wiring substrate such as a film, and the bumps and the electrode regions are ultrasonically bonded by ultrasonic waves. Thereby, the data carrier can be mass-produced at a low cost.
一方、こういった非接触ＩＣタグは、バーコードと同様な使用環境で用いられることが多く、外気にさらされた状況下で使用される可能性がある。そのため、ＩＣと基板回路の接着力が重要となる。 On the other hand, such a non-contact IC tag is often used in a use environment similar to that of a barcode, and may be used in a situation exposed to the outside air. Therefore, the adhesive force between the IC and the substrate circuit is important.
ＩＣと基板回路との接着力を高める方法として、基板表面に接着剤を塗布し、ＩＣ実装時の熱で接着剤を溶かして、実装後に再び接着剤が凝固してＩＣと基板を固定する方法がある。 As a method of increasing the adhesion between the IC and the substrate circuit, a method of fixing the IC and the substrate by applying an adhesive to the substrate surface, melting the adhesive with heat at the time of IC mounting, and solidifying the adhesive again after mounting. There is.
この方法は、図５（Ａ）に示すように、樹脂基材１１６上に積層された金属箔１１５の表面に熱硬化性樹脂材１１４（レジスト）からなるインク材を所要配線回路上に塗布形成する。該インク材より露出した部分の金属をエッチングにより除去することによって配線回路基板１１７を作製し、作製された配線回路基板１１７の上に、ＩＣと基板の接着性を保つために基板全面に熱可塑性接着剤１１３を塗布する。 In this method, as shown in FIG. 5A, an ink material made of a thermosetting resin material 114 (resist) is applied and formed on the required wiring circuit on the surface of the metal foil 115 laminated on the resin base material 116. To do. A wiring circuit board 117 is manufactured by removing the metal exposed from the ink material by etching, and the entire surface of the printed circuit board 117 is thermoplastic on the wiring circuit board 117 so as to maintain the adhesion between the IC and the board. Adhesive 113 is applied.
次に、図５（Ｂ）に示すように、配線回路基板１１７を加熱し、半導体１１１から突出したバンプ１１２に超音波を印加しつつ、該バンプ１１２を配線回路基板１１７に押し当てて熱硬化性樹脂材１１４を除去し、さらに、バンプ１１２と配線回路基板１１７間に超音波で金属融着層の形成を行う。 Next, as shown in FIG. 5B, the wiring circuit board 117 is heated and ultrasonic waves are applied to the bumps 112 protruding from the semiconductor 111, and the bumps 112 are pressed against the wiring circuit board 117 to be thermoset. The conductive resin material 114 is removed, and a metal fusion layer is formed between the bumps 112 and the printed circuit board 117 with ultrasonic waves.
この方法では、図６（Ａ）〜（Ｃ）に示すように、エッチングにより金属が除去された部分に接着剤を十分に充填することができない。このため、接着面積は、半導体全体ではなく、基板回路とＩＣとの接着部分のみとなる。 In this method, as shown in FIGS. 6A to 6C, it is not possible to sufficiently fill the adhesive in the portion where the metal has been removed by etching. For this reason, the bonding area is not the entire semiconductor, but only the bonding portion between the substrate circuit and the IC.
そして、近年、非接触ＩＣタグの小型化が進んでいるため、接着面積が小さくなる一方であり、強度を確保することが困難になってきている。
限られた面積で接着力を高める方法としては、ＩＣ実装のパワーを強める方法が考えられる。しかし、この方法は、半導体への負荷が増し、破損させる可能性がある。
As a method for increasing the adhesive force in a limited area, a method for increasing the power of IC mounting is conceivable. However, this method increases the load on the semiconductor and may cause damage.
この発明は、上述の問題に鑑み、半導体と絶縁性基材の接着力を向上させ、半導体と絶縁性基材の剥離に対する機械的強度を向上させることを目的とする。 In view of the above-described problems, an object of the present invention is to improve the adhesive strength between a semiconductor and an insulating base material and to improve the mechanical strength against peeling of the semiconductor and the insulating base material.
この発明は、絶縁性基材と複数の導体と該導体を保護する樹脂材とで構成された回路基板の前記複数の導体に、超音波を印加しつつ半導体の各バンプを押し付け、該バンプが前記樹脂材を押し退けて前記導体と融着することでＩＣモジュールを製造するＩＣモジュール製造方法であって、少なくとも前記各導体同士の隙間に前記半導体と前記絶縁性基材とを接着する接着剤を、複数回塗布することで前記導体の厚みより厚く充填し、前記押し付けおよび融着の際に前記接着剤によって前記半導体を前記絶縁性基材に直接的に接着させるＩＣモジュール製造方法であることを特徴とする。 According to the present invention, each bump of a semiconductor is pressed against the plurality of conductors of the circuit board composed of an insulating base material, a plurality of conductors, and a resin material protecting the conductors while applying ultrasonic waves. An IC module manufacturing method for manufacturing an IC module by pushing away the resin material and fusing it with the conductor, wherein an adhesive that adheres the semiconductor and the insulating base material to at least a gap between the conductors A method of manufacturing an IC module in which the semiconductor is filled more than the thickness of the conductor by applying a plurality of times, and the semiconductor is directly bonded to the insulating substrate by the adhesive during the pressing and fusion. Features.
この発明の態様として、前記導体の厚みを、前記接続の際に前記バンプが該導体を突き抜けない程度の厚みとすることができる。 As an aspect of the present invention, the thickness of the conductor can be set to such a thickness that the bump does not penetrate through the conductor during the connection.
この発明により、導体と絶縁性基材の接着力を向上させ、半導体と絶縁性基材の剥離に対する機械的強度を向上させることができる。 According to the present invention, the adhesive strength between the conductor and the insulating base material can be improved, and the mechanical strength against peeling of the semiconductor and the insulating base material can be improved.
この発明の一実施形態を以下図面と共に説明する。
図１は、電子モジュール１０の製造工程を示す説明図である。
図１（Ａ）に示すように、まず、適宜の厚みの樹脂基材１６と１５μｍ〜２０μｍ厚の金属箔１５の積層体を作製する工程を行う。この金属箔１５は、例えばアルミ箔とするなど、導電性を有する適宜の金属箔で構成することができる。
An embodiment of the present invention will be described below with reference to the drawings.
FIG. 1 is an explanatory view showing a manufacturing process of the electronic module 10.
As shown in FIG. 1A, first, a step of producing a laminate of a resin base material 16 having an appropriate thickness and a metal foil 15 having a thickness of 15 μm to 20 μm is performed. The metal foil 15 can be composed of an appropriate metal foil having conductivity, for example, an aluminum foil.
次に、図１（Ｂ）に示すように、金属箔１５の表面に熱硬化性樹脂材１４（レジスト）からなるインク材を、所要配線回路の形状に塗布し、エッチングレジストパターンを形成する工程を行う。この熱硬化性樹脂材１４は、エッチング後に金属箔１５同士の短絡を防止する絶縁体としても機能する。 Next, as shown in FIG. 1B, an ink material made of a thermosetting resin material 14 (resist) is applied to the surface of the metal foil 15 in the shape of a required wiring circuit to form an etching resist pattern. I do. The thermosetting resin material 14 also functions as an insulator that prevents a short circuit between the metal foils 15 after etching.
次に、図１（Ｃ）に示すように、金属箔１５のうち熱硬化性樹脂材１４から露出している部分を、エッチングにより除去する工程を行う。これにより、配線回路基板１７が形成される。このとき形成する回路の隙間１９は、少なくとも短絡しない程度の幅に形成されている。そして、半導体１１の裏面面積は、この隙間１９の幅よりも大きく形成されている。これにより、半導体１１の各バンプを、隙間１９を挟んで各回路（金属箔１５）に接続させることができる。 Next, as shown in FIG. 1C, a step of removing a portion of the metal foil 15 exposed from the thermosetting resin material 14 by etching is performed. Thereby, the printed circuit board 17 is formed. The gap 19 of the circuit formed at this time is formed to have a width that does not cause a short circuit. The area of the back surface of the semiconductor 11 is formed larger than the width of the gap 19. Thereby, each bump of the semiconductor 11 can be connected to each circuit (metal foil 15) with the gap 19 interposed therebetween.
次に、図１（Ｄ）に示すように、配線回路基板１７の表面（熱硬化性樹脂材１４の存在する側の面）の全面に熱可塑性接着剤１３を塗布する工程を行う。この塗布は、複数回（例えば２回または３回など）実行し、金属箔１５の隙間１９が、樹脂基材１６の表面（金属箔１５の底面）から熱硬化性樹脂材１４の表面まで熱可塑性接着剤１３によって隙間無く充填されるまで繰り返す。 Next, as shown in FIG. 1D, a process of applying the thermoplastic adhesive 13 to the entire surface of the printed circuit board 17 (the surface on the side where the thermosetting resin material 14 exists) is performed. This application is performed a plurality of times (for example, twice or three times), and the gap 19 of the metal foil 15 is heated from the surface of the resin base material 16 (the bottom surface of the metal foil 15) to the surface of the thermosetting resin material 14. Repeat until it is filled with the plastic adhesive 13 without any gaps.
ここで、熱可塑性接着剤１３の塗布量は、実装を阻害しないように、配線回路基板１７と半導体１１の接合性、特に配線回路基板１７と半導体１１のバンプ１２間の金属融着部に影響がでない量を上限とし、配線回路基板１７と半導体１１の接着力（シェア強度）に影響がでない量を下限とする。この例では、熱可塑性接着剤１３の厚みを８ｇ／ｍ２程度とする。 Here, the application amount of the thermoplastic adhesive 13 affects the bondability between the wiring circuit board 17 and the semiconductor 11, particularly the metal fusion portion between the wiring circuit board 17 and the bump 12 of the semiconductor 11 so as not to hinder the mounting. The upper limit is the amount that does not cause the lower limit, and the lower limit is the amount that does not affect the adhesion (shear strength) between the printed circuit board 17 and the semiconductor 11. In this example, the thickness of the thermoplastic adhesive 13 is about 8 g / m 2 .
次に、図１（Ｅ）に示すように、配線回路基板１７を加熱しながら、ＩＣチップである半導体１１から突出したバンプ１２に超音波を印加しながら該バンプ１２を金属箔１５に押し当てて熱硬化性樹脂材１４を除去する工程を行う。 Next, as shown in FIG. 1E, while the wiring circuit board 17 is heated, the bumps 12 are pressed against the metal foil 15 while applying ultrasonic waves to the bumps 12 protruding from the semiconductor 11 that is an IC chip. The process of removing the thermosetting resin material 14 is performed.
そして、図１（Ｆ）に示すように、超音波を印加しながらバンプ１２を金属箔１５に押し当てる工程をさらに続け、バンプ１２と金属箔１５間に超音波で金属融着層の形成を行う工程を行う。 Then, as shown in FIG. 1F, the process of pressing the bumps 12 against the metal foil 15 while applying ultrasonic waves is further continued, and a metal fusion layer is formed between the bumps 12 and the metal foil 15 with ultrasonic waves. The process to perform is performed.
最後に、配線回路基板１７の加熱を停止して自然冷却または強制冷却させる工程を行い、半導体１１と金属箔１５との間の接着、および熱可塑性接着剤１３による半導体１１と樹脂基材１６との間の接着を強固にして電子モジュール１０（ストラップ）が完成する。 Finally, the heating of the printed circuit board 17 is stopped and the process of natural cooling or forced cooling is performed, the adhesion between the semiconductor 11 and the metal foil 15, and the semiconductor 11 and the resin base material 16 by the thermoplastic adhesive 13. As a result, the electronic module 10 (strap) is completed.
この電子モジュール１０は、例えば、図２（Ａ）に示す十型回路、図２（Ｂ）に示すＴ型回路、または図２（Ｃ）に示すＩ型回路など、種々の配線回路基板１７を有する形状に作製することができる。 The electronic module 10 includes various printed circuit boards 17 such as a ten-shaped circuit shown in FIG. 2A, a T-shaped circuit shown in FIG. 2B, or an I-shaped circuit shown in FIG. It can be made into a shape having.
このようにして作製した電子モジュール１０は、様々な非接触ＩＣタグに用いることができる。
例えば、図３（Ａ）に示すように、電子モジュール１０をＵＨＦ型の非接触ＩＣタグインレット１の製造に用いることができる。この場合、フィルム３上にアンテナ４が設けられた長方形のシート状のアンテナ回路基板２におけるアンテナ４の接続部５に、電子モジュール１０の金属箔１５を電気的に接続すると共に接合固定する。この接続は、超音波を付与しつつ押し付けることによって実現するとよい。
The electronic module 10 thus manufactured can be used for various non-contact IC tags.
For example, as shown in FIG. 3A, the electronic module 10 can be used to manufacture a UHF type non-contact IC tag inlet 1. In this case, the metal foil 15 of the electronic module 10 is electrically connected and fixed to the connection portion 5 of the antenna 4 in the rectangular sheet-like antenna circuit board 2 provided with the antenna 4 on the film 3. This connection may be realized by pressing while applying ultrasonic waves.
また、電子モジュール１０は、図３（Ｂ）に示すコイル型の非接触ＩＣタグインレット１の製造に用いることもできる。この場合、フィルム３上にアンテナ４が設けられた長方形のシート状のアンテナ回路基板２における接続部５に、電子モジュール１０の金属箔１５を電気的に接続すると共に接合固定する。この接続は、超音波を付与しつつ押し付けることによって実現するとよい。 Moreover, the electronic module 10 can also be used for manufacturing the coil-type non-contact IC tag inlet 1 shown in FIG. In this case, the metal foil 15 of the electronic module 10 is electrically connected and bonded and fixed to the connection portion 5 in the rectangular sheet-like antenna circuit board 2 in which the antenna 4 is provided on the film 3. This connection may be realized by pressing while applying ultrasonic waves.
このようにして、非接触ＩＣタグインレット１を製造することができる。また、この非接触ＩＣタグインレット１を用いて、図３（Ｂ）に仮想線で示すように、表裏両面を適宜のカードサイズの被覆体８で挟んで一体化し、カード型の非接触ＩＣタグ９を製造するなど、適宜の非接触ＩＣタグ９を製造することができる。なお、被覆体８は、樹脂等によって形成することができる。 In this way, the non-contact IC tag inlet 1 can be manufactured. Further, as shown by the phantom line in FIG. 3B, the non-contact IC tag inlet 1 is used to integrate both sides of the front and back with a cover 8 having an appropriate card size, thereby providing a card-type non-contact IC tag. For example, an appropriate non-contact IC tag 9 can be manufactured. The covering 8 can be formed of resin or the like.
以上の製造方法により、半導体１１の裏面の全面を配線回路基板１７に強固に接着することができる。
詳述すると、図４の（Ａ１）〜（Ａ３）は、上述した製造方法により製造した電子モジュール１０を裏面から見た説明図であり、金属箔１５の厚みが１５μｍ、熱可塑性接着剤１３の塗布回数（積層回数）が３回のケースで実験した結果を示している。
With the above manufacturing method, the entire back surface of the semiconductor 11 can be firmly bonded to the printed circuit board 17.
Specifically, (A1) to (A3) in FIG. 4 are explanatory views of the electronic module 10 manufactured by the above-described manufacturing method as viewed from the back side, and the thickness of the metal foil 15 is 15 μm, and the thermoplastic adhesive 13 The result of experiment in the case where the number of times of application (number of times of lamination) is 3 is shown.
この図に示すように、半導体１１の裏面と、熱硬化性樹脂材１４の表面および樹脂基材１６の表面がほぼ隙間無く熱可塑性接着剤１３で接着される。なお、図中の（Ａ１）は半導体１１部分全体の拡大図であり、（Ａ２）はさらに隙間１９の拡大図であり、（Ａ３）は熱可塑性接着剤１３の存在部分を模式化した図である。この図示から半導体１１のバンプ１２が金属箔１５を突き抜けず、かつ金属箔１５がなるべく薄いように構成していることも解る。つまり、バンプ１２は、金属箔１５に融着して図４（Ａ）に図示するように金属箔１５の裏面に目視可能なバンプ痕１２ａ（金属融着層）を生じさせており、しかも、バンプ１２が金属箔１５の裏面から突き抜けていないことを確認できる。 As shown in this figure, the back surface of the semiconductor 11, the surface of the thermosetting resin material 14, and the surface of the resin base material 16 are bonded with a thermoplastic adhesive 13 with almost no gap. In the figure, (A1) is an enlarged view of the entire semiconductor 11 portion, (A2) is an enlarged view of the gap 19, and (A3) is a view schematically showing the portion where the thermoplastic adhesive 13 is present. is there. From this illustration, it can also be seen that the bumps 12 of the semiconductor 11 do not penetrate the metal foil 15 and the metal foil 15 is made as thin as possible. That is, the bump 12 is fused to the metal foil 15 to form a visible bump mark 12a (metal fused layer) on the back surface of the metal foil 15 as shown in FIG. It can be confirmed that the bump 12 does not penetrate from the back surface of the metal foil 15.
また、半導体１１の小型化にも十分に対応することができる。すなわち、金属箔１５同士の隙間１９は、短絡防止のためにある程度の幅が必要であり、狭くする限界がある。そうすると、半導体１１が小型化すればするほど、隙間１９を除いた接着面積（つまり図６に示した従来の接着面積）が狭くなる。これに対して、上述したように隙間１９に熱可塑性接着剤１３を充填し、半導体１１の裏面全体を接着することで、小型の半導体１１であっても十分強固に接着することができる。 In addition, the semiconductor 11 can be sufficiently reduced in size. That is, the gap 19 between the metal foils 15 needs to have a certain width in order to prevent a short circuit, and has a limit of narrowing. Then, the smaller the semiconductor 11 is, the narrower the bonding area excluding the gap 19 (that is, the conventional bonding area shown in FIG. 6). On the other hand, as described above, the gap 19 is filled with the thermoplastic adhesive 13 and the entire back surface of the semiconductor 11 is bonded, so that even the small semiconductor 11 can be bonded sufficiently firmly.
また、超音波の強度が弱いと、バンプ１２と金属箔１５の融着強度も弱くなるが、このような場合でも隙間１９に充填された熱可塑性接着剤１３によって強度を確保することができる。つまり、金属箔１５の肉厚を薄くした場合、該金属箔１５をバンプ１２が突き破らないように超音波を弱くすることが考えられる。このような場合、融着だけでは強度が低下するが、隙間１９に充填された熱可塑性接着剤１３によって補強することができ、十分な強度が得られる。 Further, if the ultrasonic wave strength is weak, the fusion strength between the bumps 12 and the metal foil 15 also becomes weak. Even in such a case, the strength can be secured by the thermoplastic adhesive 13 filled in the gap 19. That is, when the thickness of the metal foil 15 is reduced, it may be possible to weaken the ultrasonic wave so that the bump 12 does not break through the metal foil 15. In such a case, the strength is lowered only by fusion, but the strength can be reinforced by the thermoplastic adhesive 13 filled in the gap 19 and a sufficient strength can be obtained.
また、熱可塑性接着剤１３を複数回塗布することで、１回の塗布で形成可能な厚みよりも厚い熱可塑性接着剤１３の層を形成することができる。例えば、熱可塑性接着剤１３の粘度が低く、１回に多量を塗布してもすぐに流れ出して薄くしか形成できないような場合であっても、複数回の塗布によって層を重ねて厚くすることができる。 Moreover, the layer of the thermoplastic adhesive 13 thicker than the thickness which can be formed by one application | coating can be formed by apply | coating the thermoplastic adhesive 13 in multiple times. For example, even when the viscosity of the thermoplastic adhesive 13 is low and even if a large amount is applied at one time, it can flow out immediately and can only be formed into a thin film, the layers can be stacked and thickened by multiple applications. it can.
また、半導体１１と配線回路基板１７間の接着力が向上し、半導体１１と配線回路基板１７の剥離に対する機械的強度が向上する。
また、回路となる金属箔１５間の溝（隙間１９）が熱可塑性接着剤１３で埋まることにより、半導体１１と配線回路基板１７が完全に密着する。これにより、静圧に対して応力集中が発生しにくくなり、圧力の耐性が向上する。
Further, the adhesive force between the semiconductor 11 and the printed circuit board 17 is improved, and the mechanical strength against peeling of the semiconductor 11 and the printed circuit board 17 is improved.
Further, the groove (gap 19) between the metal foils 15 serving as a circuit is filled with the thermoplastic adhesive 13, whereby the semiconductor 11 and the printed circuit board 17 are completely adhered. Thereby, stress concentration is less likely to occur with respect to static pressure, and pressure resistance is improved.
また、接着面積が向上することにより、半導体１１の実装のパワーを抑えることができ、半導体１１への負荷を低減できる。
このようにして、なるべく小型で丈夫な電子モジュール１０を作製することができる。
Further, since the adhesion area is improved, the mounting power of the semiconductor 11 can be suppressed, and the load on the semiconductor 11 can be reduced.
In this way, the electronic module 10 that is as small and strong as possible can be manufactured.
なお、図４の（Ｂ１）〜（Ｂ３）は、金属箔１５の厚みを２５μｍ、熱可塑性接着剤１３の塗布回数を２回とした場合の説明図である。この場合、図示するように熱可塑性接着剤１３の存在しない空洞１８が存在し、強固な接着が得られないこととなる。 4B1 to 4B3 are explanatory diagrams when the thickness of the metal foil 15 is 25 μm and the number of times the thermoplastic adhesive 13 is applied is two. In this case, as shown in the drawing, there is a cavity 18 in which the thermoplastic adhesive 13 does not exist, and a strong adhesion cannot be obtained.
また、図４の（Ｃ１）〜（Ｃ３）は、金属箔１５の厚みを従来と同様に３５μｍとし、熱可塑性接着剤１３の塗布回数を２回とした場合の説明図である。この場合、図示するように熱可塑性接着剤１３の存在しない空洞１８が多く存在し、強固な接着が得られないこととなる。 4 (C1) to (C3) are explanatory views when the thickness of the metal foil 15 is 35 μm as in the conventional case and the number of times of application of the thermoplastic adhesive 13 is two. In this case, as shown in the figure, there are many cavities 18 in which the thermoplastic adhesive 13 does not exist, and a strong bond cannot be obtained.
このように、従来は熱可塑性接着剤１３が隙間１９に充填されず、剥離の恐れが残っていたが、隙間１９に熱可塑性接着剤１３を確実に充填することにより、半導体１１全体が強固に接着され、剥離から強固に保護することができる。 Thus, conventionally, the thermoplastic adhesive 13 was not filled in the gap 19 and there was a risk of peeling. However, by reliably filling the thermoplastic adhesive 13 in the gap 19, the entire semiconductor 11 was made stronger. Bonded and can be strongly protected from peeling.
なお、上述した例では、金属箔１５の厚みを１５μｍ〜２０μｍ程度、熱可塑性接着剤１３の塗布量を８ｇ／ｍ２程度としたが、これに限らず、金属融着部に影響がでない上限と、配線回路基板１７と半導体１１の接着力に影響が出ない下限の間の種々の厚み及び塗布量にすることができる。例えば、金属箔１５の厚みを２５μｍ程度、熱可塑性接着剤１３の塗布量を１２ｇ／ｍ２程度とすることもできる。 In the above-described example, the thickness of the metal foil 15 is about 15 μm to 20 μm, and the coating amount of the thermoplastic adhesive 13 is about 8 g / m 2. In addition, various thicknesses and application amounts between the lower limits that do not affect the adhesive force between the printed circuit board 17 and the semiconductor 11 can be achieved. For example, the thickness of the metal foil 15 can be about 25 μm, and the coating amount of the thermoplastic adhesive 13 can be about 12 g / m 2 .
この発明の構成と、上述の実施形態との対応において、
この発明のＩＣモジュールは、実施形態の電子モジュール１０に対応し、
以下同様に、
接着剤は、熱可塑性接着剤１３に対応し、
樹脂材は、熱硬化性樹脂材１４に対応し、
導体は、金属箔１５に対応し、
絶縁性基材は、樹脂基材１６に対応し、
回路基板は、配線回路基板１７に対応するが、
この発明は、上述の実施形態の構成のみに限定されるものではなく、多くの実施の形態を得ることができる。
In correspondence between the configuration of the present invention and the above-described embodiment,
The IC module of the present invention corresponds to the electronic module 10 of the embodiment,
Similarly ,
The adhesive corresponds to the thermoplastic adhesive 13,
The resin material corresponds to the thermosetting resin material 14,
The conductor corresponds to the metal foil 15,
The insulating base material corresponds to the resin base material 16,
The circuit board corresponds to the wired circuit board 17,
The present invention is not limited only to the configuration of the above-described embodiment, and many embodiments can be obtained.
１…非接触ＩＣタグインレット、４…アンテナ、８…樹脂板、９…非接触ＩＣタグ、１０…電子モジュール、１１…半導体、１２…バンプ、１３…熱可塑性接着剤、１４…熱硬化性樹脂材、１５…金属箔、１６…樹脂基材、１７…配線回路基板、１９…隙間 DESCRIPTION OF SYMBOLS 1 ... Non-contact IC tag inlet, 4 ... Antenna, 8 ... Resin board, 9 ... Non-contact IC tag, 10 ... Electronic module, 11 ... Semiconductor, 12 ... Bump, 13 ... Thermoplastic adhesive, 14 ... Thermosetting resin 15: metal foil, 16: resin base material, 17: printed circuit board, 19: gap
Claims (2)
少なくとも前記各導体同士の隙間に前記半導体と前記絶縁性基材とを接着する接着剤を、複数回塗布することで前記導体の厚みより厚く充填し、
前記押し付けおよび融着の際に前記接着剤によって前記半導体を前記絶縁性基材に直接的に接着させる
ＩＣモジュール製造方法。 Each bump of the semiconductor is pressed against the plurality of conductors of the circuit board composed of an insulating base material, a plurality of conductors, and a resin material that protects the conductors while applying ultrasonic waves, An IC module manufacturing method for manufacturing an IC module by pushing and fusing with the conductor,
At least a gap between the conductors is filled with an adhesive that adheres the semiconductor and the insulating base material more than once, so that it is thicker than the conductor,
An IC module manufacturing method in which the semiconductor is directly bonded to the insulating base material by the adhesive during the pressing and fusion.
請求項１記載のＩＣモジュール製造方法。 2. The IC module manufacturing method according to claim 1, wherein the thickness of the conductor is set such that the bump does not penetrate the conductor during the connection.
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