JP5008289B2 - Manufacturing method and peeling method of semiconductor device - Google Patents

Description

  The present invention relates to a semiconductor device having a circuit formed of a thin film transistor (hereinafter referred to as TFT) and a manufacturing method thereof. For example, the present invention relates to an electronic apparatus in which an electro-optical device typified by a liquid crystal display panel or a light-emitting display device having an organic light-emitting element is mounted as a component.

  Note that in this specification, a semiconductor device refers to all devices that can function by utilizing semiconductor characteristics, and an electro-optical device, a semiconductor circuit, and an electronic device are all semiconductor devices.

  In recent years, a technique for forming a thin film transistor (TFT) using a semiconductor thin film (having a thickness of about several to several hundred nm) formed on a substrate having an insulating surface has attracted attention. Thin film transistors are widely applied to electronic devices such as ICs and electro-optical devices, and development of switching devices for image display devices is urgently required.

  Various applications using such an image display device are expected, but the use for portable devices is attracting attention. Currently, many glass substrates and quartz substrates are used, but they have the disadvantage of being easily broken and heavy. Further, in mass production, it is difficult to increase the size of a glass substrate or a quartz substrate, which is not suitable. Therefore, attempts have been made to form TFT elements on a flexible substrate, typically a flexible plastic film.

  However, since the heat resistance of the plastic film is low, the maximum temperature of the process has to be lowered, and as a result, TFTs having better electrical characteristics cannot be formed than when formed on a glass substrate. Therefore, a high-performance liquid crystal display device or light emitting element using a plastic film has not been realized.

  Therefore, a technique has been proposed in which an element formed on a glass substrate is peeled off from the substrate and transferred to another base material such as a plastic film.

The present applicant has proposed the peeling and transfer techniques described in Patent Document 1 and Patent Document 2. The present applicant has also proposed a peeling and transfer technique described in Patent Document 6.

  In a minute device such as an IC, a circuit board that constitutes an IC card or the like by cutting the semiconductor wafer into chips in a state of being attached to the adhesive sheet and picking up the cut semiconductor element from the adhesive sheet It is done to be mounted on. Since a semiconductor wafer is used, it has a drawback that it is easily damaged or broken during pick-up.

Further, a peeling method has already been proposed in which a layer to be peeled existing on a substrate via a separation layer is peeled from the substrate. For example, in the techniques described in Patent Document 3 and Patent Document 4, a separation layer made of amorphous silicon (or polysilicon) is provided, and the substrate is passed through the substrate and irradiated with laser light to be included in the amorphous silicon. By releasing hydrogen, voids are generated and the substrate is separated. In addition, using this technique, Patent Document 5 also describes that a layer to be peeled (referred to as a layer to be transferred in the publication) is attached to a plastic film to complete a liquid crystal display device.

However, in the above method, a substrate having high translucency is used, and sufficient energy is passed through the substrate to release hydrogen contained in the amorphous silicon. Irradiation is desirable, and there is a problem that the layer to be peeled is damaged. In addition, in the above method, when an element is manufactured on the separation layer, if high-temperature heat treatment or the like is performed in the element manufacturing process, hydrogen contained in the separation layer is diffused and reduced, and the separation layer is irradiated with laser light. However, there is a risk that peeling will not be performed sufficiently. Therefore, in order to maintain the amount of hydrogen contained in the separation layer, there is a problem that the process after the formation of the separation layer is limited. In addition, the above publication describes that a light shielding layer or a reflective layer is provided in order to prevent damage to the layer to be peeled, but in that case, it is difficult to manufacture a transmissive liquid crystal display device. In addition, with the above method, it is difficult to peel off a layer to be peeled having a large area.
JP-A-8-288522 JP-A-8-250745 Japanese Patent Laid-Open No. 10-125929 Japanese Patent Laid-Open No. 10-125931 Japanese Patent Laid-Open No. 10-125930 JP2003-174153

  In recent years, it has been considered that non-contact IC tags (generally referred to as non-contact data carriers) that can record and read information in a non-contact manner are used for information management and logistics management of goods and goods. Has been.

  A semiconductor wafer which is a base of a semiconductor chip used for an IC card or a non-contact IC tag is expensive and unsuitable for mass production.

In addition, a matrix type (multi-cavity type) manufacturing method in which a large number of electronic component elements are mounted on a glass substrate and individually cut into products is becoming widespread. For mass production, it is preferable to manufacture a small device on a large substrate.

  In addition, when an integrated circuit formed of a thin film is formed over a substrate and peeled from the substrate, a crack (also referred to as a crack) may occur in the integrated circuit.

  Therefore, the present invention forms an integrated circuit made of a thin film on a glass substrate having a large area, and then peels off from the substrate to produce a large number of minute devices capable of receiving or transmitting data in contact, preferably non-contact. It is an object to provide a method for efficiently manufacturing. In particular, since an integrated circuit made of a thin film is very thin, there is a risk of flying during transportation, and handling is difficult.

  In the present invention, damage (damage caused by laser light irradiation, damage caused by etching, or damage caused by physical means) is applied multiple times to the separation layer (also referred to as a release layer) using at least two different methods. It is characterized in that the layer to be peeled is efficiently separated (also referred to as peeling) from the substrate. By giving damage a plurality of times using at least two different methods, a synergistic effect can be obtained that makes the separation much easier compared to peeling using only one peeling method. Compared with peeling using only one peeling method, the peeling is significantly easier, and therefore, it is particularly suitable for peeling using a large-area substrate.

  One aspect of the present invention is to provide a separation layer on an insulating substrate and a layer to be peeled including an element on the separation layer, and then selectively irradiate a laser beam on the separation layer in the irradiated region. The first stripping process is performed by causing ablation to form a path (consisting of cracks, holes, altered parts, etc.), and the second stripping process is performed by etching with a gas or liquid containing halogen fluoride using the path. It is intended to promote and shorten the separation layer removal process. The gas or liquid containing halogen fluoride is easily introduced into the ablated path portion.

  Ablation means that the part that absorbed the irradiated light (part of the separation layer) is excited photochemically or thermally, and the bonds of atoms or molecules inside the surface or inside are cut and released. All or part of the constituent material of the separation layer appears as a phenomenon that causes a phase change such as melting and transpiration (vaporization). In addition, the phase change may result in a fine foamed state, resulting in a decrease in bonding strength.

As laser light, gas laser such as excimer laser, CO ₂ laser, argon laser, solid state laser such as glass laser, ruby laser, alexandrite laser, Ti: sapphire laser, YAG, YVO ₄ , YLF, YAlO ₃ etc. A solid laser using a crystal doped with Nd, Tm, or Ho, or a semiconductor laser may be used. A laser that generates a gas when irradiated to a separation layer is used. Alternatively, a laser beam using any one of the above as the laser beam, and one that loses or reduces the bonding force between atoms or molecules of a substance constituting the separation layer when the separation layer is irradiated is used.

  The laser oscillation may be either continuous oscillation or pulse oscillation, and the laser beam may be linear, rectangular, circular, or elliptical. Further, the wavelength to be used may be any of the fundamental wave, the second harmonic, and the third harmonic, and may be appropriately selected by the practitioner. The scanning method may be any of the vertical direction, the horizontal direction, and the diagonal direction, and may be further reciprocated.

  In the conventional peeling method by laser light irradiation, since peeling is performed in one peeling step, it is desirable to irradiate the entire surface of the separation layer, and the laser light is irradiated so that there is no unirradiated region. On the other hand, in the present invention, it is only necessary to irradiate a part of the laser beam in the first peeling process, and even if irradiation is performed except for a region where an element that is easily affected by the laser beam is provided, the second etching is performed. The peeling is completed in the peeling process.

  Moreover, the conventional peeling method by the etching by the gas or liquid containing halogen fluoride has opened the hole for accelerating etching. However, the photolithographic process for making holes is increased, and in a finer device, elements cannot be arranged in a region for making holes, making integration difficult. Moreover, since the conventional peeling method by etching with gas or liquid peels from the substrate at the end of etching, the layer to be peeled cannot be fixed. On the other hand, the present invention can form a path for accelerating etching simply by irradiating with laser light, and by designing the laser light irradiation area as appropriate, part of the separation layer can be easily left to be peeled off. The layer can be fixed.

The structure of the invention related to the method for manufacturing a semiconductor device disclosed in this specification is as follows.
Forming a separation layer on the first substrate;
Forming a layer to be peeled including a semiconductor element on the separation layer;
Irradiating a part of the separation layer with light to form a crack or a hole in a layer in the separation layer or in an interface;
Introducing a gas or liquid that reacts with the separation layer from the crack or hole to remove the separation layer to separate the first substrate and the layer to be peeled,
A method for manufacturing a semiconductor device is characterized in that the layer to be peeled is transferred to a second substrate.

In addition, the separation layer or part thereof is altered (oxidized, reduced, etc.) by light irradiation to form a modified layer (oxidized layer, etc.), or a layer having a different etching rate is formed on the separation layer or part thereof. Other configurations may be
Forming a separation layer on the first substrate;
Forming a layer to be peeled including a semiconductor element on the separation layer;
Irradiating a part of the separation layer with light to alter a part of the separation layer,
Separating the first substrate and the layer to be peeled by removing a separation layer by allowing a gas or a liquid that reacts with the separation layer to enter from the altered portion,
A method for manufacturing a semiconductor device is characterized in that the layer to be peeled is transferred to a second substrate.

  In another aspect of the present invention, after providing a separation layer on an insulating substrate and a layer to be peeled including an element on the separation layer, the separation layer is formed of a gas containing halogen fluoride in the first peeling step. Alternatively, the layer to be peeled may be peeled off from the substrate by selective removal by etching with liquid, fixing with the remaining separation layer, and performing ablation by laser light irradiation as the second peeling step.

Further, the configuration of the other invention is as follows:
Forming a separation layer on the first substrate;
Forming a layer to be peeled including a semiconductor element on the separation layer;
Exposing the separation layer to a gas or liquid that reacts with the separation layer to remove at least part of the separation layer;
Irradiating a part of the separation layer with light to separate the first substrate and the layer to be peeled;
A method for manufacturing a semiconductor device is characterized in that the layer to be peeled is transferred to a second substrate.

  Further, the laser beam may be irradiated from the back side of the substrate, and the device peeled from the substrate can be dropped by turning the substrate upside down and irradiating the laser beam from the back side.

Further, the configuration of the other invention is as follows:
Forming a separation layer on the first substrate;
Forming a layer to be peeled including a semiconductor element on the separation layer;
Exposing the separation layer to a gas or liquid that reacts with the separation layer to remove at least part of the separation layer;
The second substrate is disposed at a lower position facing the first substrate with the surface of the first substrate on which the layer to be peeled is provided facing down,
A part of the separation layer is irradiated with light from the back side of the first substrate to separate the first substrate and the layer to be peeled, and the layer to be peeled is dropped onto the second substrate. Then, the method for manufacturing a semiconductor device is characterized in that the layer to be peeled is transferred to a second substrate.

  In another aspect of the present invention, after providing the separation layer on the insulating substrate and the layer to be peeled including the element on the separation layer, as a first peeling step, other than the region where the element is provided, That is, a laser beam is irradiated around the element to cause ablation in the separation layer of the irradiated region to form a path (consisting of cracks, holes, altered parts, etc.), and then as a second peeling step, the path The part surrounded by is peeled off by physical means.

Further, the configuration of the other invention is as follows:
Forming a separation layer on the first substrate;
Forming a layer to be peeled including a semiconductor element on the separation layer;
Irradiating light to the periphery of the semiconductor element to form a crack or a hole in the layer or in the interface of a part of the separation layer,
Peeling the first substrate and the layer to be peeled fixed by a part of the separation layer overlapping the semiconductor element using physical means;
A method for manufacturing a semiconductor device is characterized in that the layer to be peeled is transferred to a second substrate.

In the above configuration, since the separation layer is peeled off using physical means, the separation layer includes a film containing WO _x on W, a film containing MoO _x on Mo, a film containing NbO _x on Nb, and TiO on Ti. One of the characteristics is that it is formed of a film containing _X.

  Further, it is preferable to provide a portion that can be easily pinched with a chuck claw or the like when peeling. Of the four corners of the substrate on which the peelable layer is provided on the separation layer, one corner is irradiated with laser light to intentionally bend the peelable layer to provide a place where it can be easily pinched. Pull to the other direction by physical means. Peel off in a direction oblique to the side of the substrate.

  According to another aspect of the present invention, after providing the separation layer on the insulating substrate and the layer to be peeled including the element on the separation layer, the region other than the region where the element is provided as the first separation step, A laser beam is irradiated around the element to cause ablation in the separation layer in the irradiated region to form a path (consisting of cracks, holes, altered portions, etc.). Thereafter, as a second peeling step, only one corner is peeled off, so that the separation layer is partially removed by immersion in an etchant, and one corner of the peeled layer is intentionally warped. By doing so, you may provide the location which is easy to pinch. Thereafter, as a third peeling step, the part peeled off at only one corner is peeled off by physical means, and the part surrounded by the path is also peeled off. In this case, peeling is performed using three different methods.

  The separation layer is made of a material that can be decomposed or dissolved by a gas or liquid used in the peeling step. Further, the separation layer absorbs light to be irradiated (laser light, light from a halogen lamp, etc.) and peels off in the layer and / or at the interface (hereinafter also referred to as “in-layer peeling” or “interface peeling”). Preferably, the bonding force between atoms or molecules of the substance constituting the separation layer disappears or decreases by irradiation with light, or ablation occurs in the layer. What leads to peeling and / or interfacial peeling is used. In addition, it is possible to form an altered layer (oxidized layer, etc.) by altering (oxidizing, reducing, etc.) the separation layer or a part thereof by light irradiation, or to form a layer having a different etching rate on the separation layer or part thereof. Use the right material.

Furthermore, the gas may be released from the separation layer by light irradiation, and the separation effect may be exhibited. That is, there are a case where the component contained in the separation layer is released as a gas, and a case where the separation layer absorbs light and becomes a gas instantaneously, and its vapor is emitted, contributing to the separation.

Examples of the composition of such a separation layer include the following.

An example of the composition of the separation layer is a semiconductor material, typically amorphous silicon. Amorphous silicon is etched with a gas containing halogenated fluorine (for example, chlorine trifluoride (ClF ₃ ), a mixed gas of ClF ₄ and O ₂ ) or a liquid containing halogenated fluorine (for example, KOH, TMAH, etc.). It is possible, and when a predetermined amount of hydrogen is contained in amorphous silicon, hydrogen is released by irradiation with irradiation light, and an internal pressure is generated in the separation layer, which becomes a force for peeling the upper and lower thin films. . The content of H in the amorphous silicon is adjusted by appropriately setting film forming conditions such as gas composition, gas pressure, gas atmosphere, gas flow rate, temperature, substrate temperature, and input power in CVD. Can do.

Examples of the composition of the other separation layer include W, Mo, Nb, Ti, or an alloy containing any one of these. Among these, W can be etched with a gas containing fluorine halide (for example, chlorine trifluoride (ClF ₃ )), and tungsten oxide (WO) formed by altering (in this case, oxidation) the surface by irradiation with light. _X ) is more easily etched than W. It is also possible to peel the upper and lower thin films by changing the adhesion by irradiation of light, and oxygen is used to form tungsten oxide (WO _X ). It is preferable that a W film be formed in contact with a material layer (such as silicon oxide) that is included, and then irradiated with light.

Examples of other separation layer compositions include various oxide ceramics such as silicon oxide or silicate compounds, titanium oxide or titanate compounds, zirconium oxide or zirconate compounds, lanthanum oxide or lanthanate compounds. it can. Examples of silicon oxide include SiO, SiO ₂ , Si ₃ O ₂ O ₃ , Li ₂ SiO ₃ , CaSiO ₃ , ZrSiO ₄ , and Na ₂ SiO ₃ . Examples of titanium oxide include TiO, Ti ₂ O ₃ , and TiO _2. Examples of titanic acid compounds include BaTiO ₄ , BaTiO ₃ , Ba ₂ Ti ₉ O ₂₀ , BaTi ₅ O ₁₁ , CaTiO ₃ , SrTiO ₃ , PbTiO ₃ , MgTiO ₃ , ZrTiO ₂ , SnTiO ₄ , Al ₂ TiO ₅ , FeTiO ₃ can be mentioned. Examples of the zirconium oxide include ZrO ₂ , and examples of the zirconate compound include BaZrO ₃ , ZrSiO ₄ , PbZrO ₃ , MgZrO ₃ , and K ₂ ZrO ₃ . Examples of the ceramic include PZT, PLZT, PLLZT, PBZT, and the like, and nitride ceramics such as silicon nitride, aluminum nitride, and titanium nitride.

An example of the composition of the other separation layer is an organic polymer material. Examples of the organic polymer material include —CH ₂ —, —CO— (ketone), —CONH— (amide), —NH— (imide), —COO— (ester), —N═N— (azo), — Those having a bond such as CH = N- (Schiff) (these bonds are cut by irradiation with irradiation light 7), particularly those having many of these bonds may be used. The organic polymer material may have an aromatic hydrocarbon (one or two or more benzene rings or a condensation thereof) in the structural formula.

  Specific examples of such organic polymer materials include polyethylene, polyolefins such as polypropylene, polyimide, polyamide, polyester, polymethyl methacrylate (PMMA), polyphenylene sulfide (PPS), polyethersulfone (PES), and epoxy resin. Etc.

The thickness of the separation layer varies depending on various conditions such as the purpose of peeling, the composition of the separation layer, the layer structure, and the formation method, but it is usually preferably about 1 nm to 10 μm. If the thickness of the separation layer is too small, the uniformity of the film formation may be impaired, and unevenness may occur in the peeling, and if the thickness is too thick, in order to ensure good peeling properties of the separation layer, It is desirable to increase the power (light quantity) of the irradiated light. Note that the thickness of the separation layer is preferably as uniform as possible.

  Moreover, the format method of a separated layer is not specifically limited, It selects suitably according to various conditions, such as a film composition and a film thickness. For example, CVD (including LPCVD, ECR-CVD, MOCVD), vapor deposition, molecular beam vapor deposition (MB), sputtering, ion plating, PVD and other various gas phase film formation methods, electroless plating methods, Langmuir-Blodget ( LB) method, spin coating, spray coating, roll coating, and other coating methods, various printing methods, ink jet methods, powder jet methods, and the like, and combinations of two or more of these can also be formed.

  Further, the layer to be peeled off from the substrate in the peeling step is warped so that the end portion is moved away due to the stress. If a force is applied to the layer to be peeled in order to return the warp in order to eliminate the warp, there is a risk of cracking. Therefore, in the present invention, a film having a warp that matches the warp direction of the layer to be peeled is used as a substrate to be transferred, and the warp amount is controlled within a certain range. That is, most of the obtained semiconductor device is warped in the initial state.

  In addition, a structure of a semiconductor device in which at least a part is warped in an initial state is also one of the inventions disclosed in this specification, and the structure includes a semiconductor including a stack including a layer including an antenna and a layer including a thin film transistor. The semiconductor device is characterized in that at least a part of the semiconductor device has a warp with a layer side including an antenna inside.

  Moreover, the front and back can be made easy to understand by warping the initial state of the semiconductor device. Further, when the surface is bent in the opposite direction to the initial state, the fragile surface side can be easily understood. Further, by warping the initial state of the semiconductor device, it becomes easy to pick up a device placed on a flat surface even if it is a very thin device.

  In the above structure, in order to warp the initial state of the semiconductor device, the layer to be peeled including the element is fixed with a film after uniaxial stretching. Note that the layer to be peeled may be fixed with at least one film. In addition, the film to be peeled including the element may be sandwiched between two films (uniaxially stretched) having the same stretching direction, and sealed.

  Alternatively, in the above structure, the initial state of the semiconductor device may be warped by being sandwiched between a plurality of films having different thermal expansion coefficients. Note that the initial state refers to a state in which no external force (excluding gravity) is applied to the semiconductor device.

  Alternatively, in the above structure, the semiconductor device is sandwiched between the first film and the second film, and is disposed closer to the layer including the thin film transistor than the thermal contraction rate of the first film disposed on the layer including the antenna. One feature may be to reduce the thermal shrinkage of the second film.

  Further, at the time of laminating, at least a part of the device may be warped by warping the laminate film.

  In addition, in this specification, a laminated film refers to the laminated film of a base film and an adhesive synthetic resin film, or two or more types of laminated films. As the base film, polyesters such as PET and PBT, polyamides such as nylon 6 and nylon 66, inorganic vapor deposition films, or papers may be used. As the adhesive synthetic film, polyolefin such as PE or PP, acrylic synthetic resin, epoxy synthetic resin, or the like may be used. The laminate film is laminated with a workpiece by thermocompression using a laminating apparatus. In addition, it is preferable to apply | coat an anchor coating agent as pre-processing which performs a lamination process, and can make the adhesion | attachment of a laminate film and a to-be-processed object strong. As the anchor coating agent, an isocyanate-based agent may be used.

  In this specification, heat sealing refers to sealing by thermocompression bonding, and heat is applied to the adhesive layer part-coated on the film substrate or the outermost layer or innermost layer having a low melting point of the laminate film. It means to melt by and adhere by pressing.

  Another structure of the present invention is a semiconductor device including a stack including a layer including an antenna and a layer including a thin film transistor. The semiconductor device has a warp with the layer including the antenna on the inside, and the amount of warpage. Is a semiconductor device characterized in that it is greater than 0 and not less than 1% and not more than 20% with respect to the width of the semiconductor device. If the amount of warpage exceeds 20%, the electrical characteristics of the TFT may change drastically and the integrated circuit of the semiconductor device may not function. In addition, the semiconductor device of the present invention is not limited to the stack of a layer including an antenna and a layer including a thin film transistor, and may be any structure as long as it includes at least an antenna and an integrated circuit including a semiconductor element.

  In this specification, the amount of warpage refers to a value (b−a) obtained by measurement by the depth of focus method. That is, as shown in FIG. 3C, it is placed so that both side edges of the warped device (fixed with a film) are in contact with the focusing means 1202 having a microscope capable of measuring the focal length. The focal length (a) of the highest position of the device is measured, the difference (b−a) between this focal length (a) and the focal length (b) with respect to the upper surface of the measurement surface plate 1200 is obtained, and this value is calculated as the amount of warpage. It is defined as

  When the device is rectangular, one side of the device has a width in the X direction, and the other side of the device has a width in the Y direction, two states shown in FIG. 3A or FIG. 3B are possible. 3A shows a device 1201 having a warp in the short side direction, and FIG. 3B shows a device 1211 having a warp in the long side direction. In either state, the antenna side is designed to be warped inside, and the amount of warpage exceeds 0 with respect to the width of the semiconductor device (the width in the X direction or the width in the Y direction) and is 1% or more and 20%. One of the features is as follows. Further, the amount of warpage of the device can be adjusted by adjusting the film thickness of the film formed on the substrate. In this specification, it is a principle to warp with the antenna side inward, but if at least a part of the device has a warp with the antenna side inward, some warp with the antenna side outward. You may have.

In the above structure, the thin film transistor is a thin film integrated circuit including a central processing unit or a memory.

  The channel length directions of the regions functioning as the channels of the elements constituting the thin film integrated circuit are all arranged in the same direction and warped in a direction different from the channel length direction, that is, a channel width direction perpendicular to the channel length direction. A device is desirable. An example is shown in FIG. FIG. 10A is a perspective view of the device 1001 placed on the flat surface of the surface plate 1000. The device 1001 is warped in the channel width direction 1008 of the TFT disposed in the integrated circuit portion 1004. Note that in FIG. 10A, for easy understanding, an island-shaped semiconductor layer 1002 of a TFT is illustrated, and a channel length direction 1007 perpendicular to the channel width direction is also illustrated. FIG. 10B is a cross-sectional view corresponding to FIG. Since the channel length direction is different from the direction in which the device is warped, the influence on the element characteristics can be minimized. That is, it is possible to provide a semiconductor device that is resistant to deformation in a certain direction (here, the direction in which the device is warped). In addition, it is possible to provide a semiconductor device in which deformation other than a predetermined direction (here, the direction in which the device is warped) hardly occurs.

  In the above structure, the semiconductor device is characterized in that the thin film integrated circuit including the thin film transistor is driven by communication means transmitted from a reader / writer device.

  Note that in FIG. 10A, the antenna included in the device is spiral, but the shape of the antenna is not particularly limited as long as it has a length that functions as an antenna. In FIG. 10A, the device 1001 has a warp in the same direction 1005 as the short side direction of the antenna portion 1003. Since the antenna portion 1003 may be broken when bent in various directions, it is preferable to have an antenna shape that can withstand a certain direction (here, the direction in which the device is warped). For example, the device 1001 may be reinforced by making the portion in the short direction 1006 of the antenna thicker than the portion in the longitudinal direction 1005 of the antenna. In addition, as shown in FIG. 10A, the antenna shape in the longitudinal direction is preferably linear. By making the antenna shape in the longitudinal direction linear, a semiconductor device that is more resistant to deformation can be provided.

  The direction in which the device having the antenna and the integrated circuit is warped is not particularly limited. If the device is rectangular, the device may be warped in a diagonal direction, or only a part of the device may be in a predetermined direction. It may be warped. FIG. 10C is shown as another example different from FIG.

  FIG. 10C is a perspective view of the device 1111 placed on the flat surface of the surface plate 1100. The device 1111 is warped in the channel width direction 1108 of the TFT disposed in the integrated circuit portion 1114. Note that in FIG. 10A, for easy understanding, an island-shaped semiconductor layer 1102 of a TFT is illustrated, and a channel length direction 1107 perpendicular to the channel width direction is also illustrated. A cross-sectional view corresponding to FIG. 10C is FIG. In FIG. 10C, the device 1111 has a warp in the same direction 1105 as the longitudinal direction of the antenna portion 1113. In FIG. 10C, the antenna shape in the longitudinal direction 1105 is set to be longer than the portion in the short direction 1106 of the antenna in order to have an antenna shape that can withstand warping in a certain direction (here, the direction in which the device is warped). Make it thicker.

  A device including an antenna and an integrated circuit formed over a flexible substrate may cause disconnection or contact failure when bent in various directions. In the present invention, it is possible to make it difficult to warp in other directions by setting the initial state of the device to be warped in a predetermined direction in advance. In addition, the device can be designed in consideration of the initial state of warping the device, for example, the shape and arrangement of the antenna, the arrangement of the TFT, and the like, thereby realizing a durable device. In addition, a structure in which the entire device is easily warped in a predetermined direction by using the shape and arrangement of the antenna, the arrangement of the TFT, or the like may be used.

The present invention can be applied regardless of the TFT structure. For example, a top gate TFT, a bottom gate (inverse staggered) TFT, or a forward staggered TFT can be used. Further, the TFT is not limited to a single-gate TFT, and may be a multi-gate TFT having a plurality of channel formation regions, for example, a double-gate TFT.

As the active layer of the TFT, an amorphous semiconductor film, a semiconductor film including a crystal structure, a compound semiconductor film including an amorphous structure, or the like can be used as appropriate. Further, the active layer of the TFT is a semiconductor having an intermediate structure between an amorphous structure and a crystal structure (including single crystal and polycrystal) and having a third state that is stable in terms of free energy, and has a short distance. A semi-amorphous semiconductor film (also referred to as a microcrystalline semiconductor film or a microcrystal semiconductor film) including a crystalline region having order and lattice strain can be used.

  According to the present invention, the layer to be peeled can be efficiently peeled from the substrate by a plurality of peeling treatments.

  Further, according to the present invention, it is possible to easily pick up a device placed on a flat surface by controlling the warpage of the device in the initial state.

  Embodiments of the present invention will be described below.

(Embodiment 1)
Here, a method for manufacturing a semiconductor device of the present invention is described below.

  First, the separation layer 11a is formed over the substrate 10 having an insulating surface. Note that the substrate 10 having an insulating surface corresponds to a glass substrate, a quartz substrate, a plastic substrate, a resin substrate made of a synthetic resin having flexibility such as acrylic, or a metal substrate. In addition, as the separation layer 11a, a layer containing silicon is formed by a known method such as a sputtering method or a plasma CVD method. The layer containing silicon corresponds to an amorphous semiconductor layer, a semi-amorphous semiconductor layer in which an amorphous state and a crystalline state are mixed, and a crystalline semiconductor layer.

  Next, a base insulating layer 12 made of an inorganic insulating film is formed. As the base insulating layer 12, a single layer film made of silicon oxide, silicon nitride, silicon oxynitride, silicon nitride oxide, or the like is formed by using a known method such as a plasma CVD method or a sputtering method ( (See FIG. 1A). The base insulating layer 12 is preferably made of a material that does not chemically react with a gas or liquid containing fluorine halide used in a later step, or a material that does not chemically react. For example, a silicon nitride film, a silicon oxide film, or an oxynitride film A silicon film is used.

  Next, a layer to be peeled 13 using the insulating film 12a as a base film is formed (see FIG. 1B). FIG. 1B illustrates an example of a layer to be peeled including a first element group and a layer to be peeled including a second element group adjacent to the layer to be peeled including the first element group. Although not particularly limited, the substrate 10 having an insulating surface is provided with a large number of element groups, and is finally cut into individual products. Note that the layer to be peeled 13 including the first element group includes a first interlayer insulating layer 13a, a second interlayer insulating layer 13b, a plurality of TFTs 13c, and a conductive layer functioning as an antenna. The layer to be peeled 13 including the first element group becomes one device.

Further, a protective layer may be formed on the peeled layer 13 by a screen printing method or a droplet discharge method. The protective layer is also preferably a material that does not chemically react with a gas or liquid containing a halogenated fluorine used in a later step. For example, an organic resin such as an epoxy resin may be used as the protective layer.

  Next, light irradiation is selectively performed so that a part of the separation layer is altered, preferably ablated, and a first-stage peeling process is performed (FIG. 1C). After the first peeling process, the layer to be peeled is fixed to the substrate with a separation layer in an unirradiated region. Light irradiation is performed at least on the peripheral edge of the substrate. In addition, it is preferable that the element included in the layer to be peeled is not irradiated. A top view at this stage is illustrated in FIG. A cross-sectional view taken along a solid line AB in FIG. 1D corresponds to FIG.

  As the light irradiated here, an excimer laser is preferable in that it easily causes ablation of the separation layer. When ablation is caused in a part of the separation layer, the wavelength of the irradiated laser light is preferably about 100 nm to 350 nm if the light has wavelength dependency. In addition, when a separation characteristic is given to a part of the separation layer by causing a phase change such as outgassing, vaporization, and sublimation, the wavelength of the irradiated laser light is preferably about 350 nm to 1200 nm.

  The energy density of the excimer laser to be irradiated is preferably about 100 to 500 mJ / cm 2. The irradiation time is preferably 10 to 100 nsec. In the present invention, it is not particularly necessary to cause sufficient ablation or the like, and a gas (or liquid) containing fluorine halide used in a subsequent process passes (or penetrates) the light irradiation region. It should be easy.

  Of course, the space may be formed by completely ablating the separation layer in the region irradiated with the laser beam. The formed space becomes a gas (or liquid) path containing fluorine halide, and the remaining separation layer can be removed more efficiently. Note that the layer 13 to be peeled is fixed to the substrate 10 with the remaining separation layer even after complete ablation.

  Next, in order to prevent the peelable layer from falling apart, the peelable layer 13 is fixed with the first film 19a having the first adhesive layer 18a. The first film 19a includes resin materials (polyester, polypropylene, polyvinyl chloride, polystyrene, polyacrylonitrile, polyethylene terephthalate, nylon, etc.), typically thermoplastic plastic, PVF (polyvinyl fluoride) film, mylar. A plastic substrate (thickness: 200 μm to 500 μm) that is a film or an acrylic resin film is used. Furthermore, the first film 19a is preferably low in thermal expansion. Alternatively, the peeled layer may be fixed by thermocompression using a laminate film. Moreover, although the example fixed with the 1st film after light irradiation was shown here, the process order is not specifically limited, For example, it fixes with a film before light irradiation, permeate | transmits a film, and irradiates light. May be.

Next, a separation layer other than the light irradiation region is removed using an etching agent, and a second-stage peeling process is performed (FIG. 1E). The layer 13 to be peeled off from the substrate 10 at a stage after the second stage peeling treatment. Here, chlorine trifluoride (ClF ₃ ) is used as an etching agent. At the same time, not only the remaining separation layer but also the separation layer in the light irradiation region is removed.

  Further, etching is performed in the direction of the arrow shown in FIG. 1E so that the portion where the etching is completed, that is, the portion 11b of the separation layer that remains unetched until the end is positioned so as not to overlap the layer to be peeled. It is preferable to design the positions of the irradiation region 11c and the layer to be peeled. Since a crack or the like is likely to occur at a position where the etching is completed, it is important not to overlap with a layer to be peeled that will be a device later. Here, the location where etching is completed is positioned between two adjacent layers to be peeled.

  The separation layer in the region irradiated with light in the previous step has holes and cracks due to partial ablation, and the remaining separation layer can be efficiently removed. That is, the region irradiated with the laser beam becomes a path for chlorine trifluoride, and the separation layer can be efficiently removed.

  Next, the layer to be peeled is fixed with the second film 21a having the second adhesive layer 20a (see FIG. 2A). The second film 21a includes resin materials (polyester, polypropylene, polyvinyl chloride, polystyrene, polyacrylonitrile, polyethylene terephthalate, nylon, etc.), typically thermoplastic plastic, PVF (polyvinyl fluoride) film, mylar. A plastic substrate (thickness: 200 μm to 500 μm) that is a film or an acrylic resin film is used. Furthermore, the second film 21a is preferably low in thermal expansion.

  Finally, it is possible to obtain a state shown in FIG. The peeled layer 13 including the element is sealed with a first film 19b having a first adhesive layer 18b and a second film 21b having a second adhesive layer 20b.

  In this way, after forming an integrated circuit consisting of a thin film on a large-area glass substrate, it is possible to receive or transmit data in contact, preferably non-contact, by peeling off the substrate by performing the peeling process twice. It is possible to provide a method for efficiently producing a large number of minute devices. In the method described in this embodiment mode, the element characteristics are not changed before and after peeling because the element is not irradiated with laser light for ablation.

  In addition, when laser light is used for crystallization or activation of a semiconductor film in a manufacturing process of a semiconductor element included in a layer to be peeled, a part of a separation layer located below is simultaneously irradiated with laser light. Therefore, it becomes easier to peel off.

  In addition, although an example in which amorphous silicon is used as the separation layer, laser light is used as light to irradiate the separation layer, and chlorine trifluoride is used as an etching agent to etch the separation layer is not particularly limited. The person may select as appropriate.

(Embodiment 2)
Here, a manufacturing method different from that in Embodiment Mode 1 is described with reference to FIGS.

  First, the separation layer 411a is formed over the entire surface of the substrate 410 having an insulating surface. Here, a tungsten (W) film obtained by a sputtering method is used as the separation layer. Next, a base insulating layer 412a made of an inorganic insulating film is formed (see FIG. 4A). The base insulating layer 412a is preferably formed using a material that hardly reacts with a gas or a liquid containing a halogenated fluorine used in a later step or a material that does not chemically react. The base insulating layer 412a is preferably a stacked layer of a silicon oxide film or a silicon nitride film. Here, a silicon nitride film is stacked over a silicon oxide film in contact with the tungsten film.

  Next, a layer to be peeled 413 using the base insulating layer 412a as a base film is formed. Note that the layer to be peeled 413 including the first element group includes a first interlayer insulating layer 413a, a second interlayer insulating layer 413b, a plurality of TFTs 413c, and a conductive layer 413d functioning as an antenna. The layer to be peeled 413 including the first element group becomes one device.

  In addition, during the manufacturing process of the semiconductor element included in the layer to be peeled 413, heat treatment or laser light irradiation is performed, and at that time, a layer (not shown) made of tungsten oxide is formed at the interface between the separation layer and the base insulating layer. Is done. In addition, a layer (not shown) made of tungsten oxide is formed at the interface also when the base insulating layer is stacked on the separation layer.

  Next, the protective layer 416 is formed by a screen printing method or a droplet discharge method. Note that here, the protective layer 416 is formed so as to cover both the layer to be peeled including the first element group and the layer to be peeled including the second element group (see FIG. 4B). The protective layer is also preferably a material that does not chemically react with a gas or liquid containing a halogenated fluorine used in a later step. For example, an organic resin such as an epoxy resin may be used as the protective layer.

  Next, the base insulating layer 412a is selectively etched using the protective layer 416 as a mask and the separation layer 411a is exposed (see FIG. 4C).

  Note that FIG. 5A is a top view at this stage. A cross-sectional view taken along a solid line AB in FIG. 5A corresponds to FIG.

Next, the separation layer is removed using an etching agent, and a first-stage peeling process is performed. Note that in this etching, the entire separation layer is not removed, but the etching is stopped halfway to leave a part of the separation layer 411b, and the peeled layer is fixed at the remaining portion. Here, chlorine trifluoride (ClF ₃ ) is used as an etching agent. Note that a cross-sectional view after the etching is illustrated in FIG. Etching is performed so as to wrap around the layer to be peeled, and as the etching proceeds, the layer to be peeled warps with the antenna side facing inward.

  A layer to be peeled and a protective layer are arranged so that one layer to be peeled is etched from one direction. The position of the layer to be peeled is set so that the remaining separation layer 411b does not overlap the layer to be peeled.

  Note that FIG. 5B is a top view at this stage. A cross-sectional view taken along a solid line CD in FIG. 5B corresponds to FIG.

  After the etching is finished, in this embodiment mode, the layer to be peeled 413 is fixed by the remaining separation layer 411b. Even if the etching of the separation layer proceeds, the layer to be peeled is not disposed at a place where a crack is likely to occur.

  Next, the remaining separation layer 411b is irradiated with light to perform a second-stage peeling process. FIG. 4E illustrates an example in which the substrate 410 having an insulating surface is held upside down and light irradiation is performed through the substrate 410 having an insulating surface. By performing light irradiation, adhesion between the separation layer 411b and the substrate 410 having an insulating surface is reduced, and the layer to be peeled 413 is separated from the substrate 410 having an insulating surface.

When laser light is used as the irradiation light, the laser light can be separated one by one in order from the spot irradiated by scanning the laser light. Further, the laser beam only needs to be irradiated to the remaining separation layer 411b, and is not irradiated to the portion where the element is formed.

In addition, when light from a light source such as a halogen lamp is used as light to be irradiated, it is preferable to shield light other than a portion (a portion where an element is formed) to be irradiated with a metal mask. In addition, since light from a light source such as a halogen lamp is applied to the entire surface, all the layers to be peeled can be separated almost simultaneously.

  Then, the separated layer 413 that has been separated falls freely. When the layer to be peeled 413 is dropped on a flat surface, the layer to be peeled 413 is warped, so that it is easy to pick up.

  Next, the picked up peeled layer 413 is fixed with a film having an adhesive layer. It fixes with the film after uniaxial stretching so that the peeled layer 417 may maintain the warped state. Since the film is sold by being wound around a roll-shaped core, the bonding surface is determined so that the inner surface is in contact with the exposed base insulating layer 418.

  The amount of warpage is preferably greater than 0 and less than or equal to 1% and less than or equal to 20% with respect to the width of the semiconductor device (width in the direction perpendicular to the warped direction). If it exceeds 20%, there is a possibility that a problem that it is difficult to attach to an article to be attached or a problem that it is difficult to read data by a reading device may occur. Moreover, it is preferable to control the amount of warpage so that it does not warp in the opposite direction due to temperature changes.

  Note that the warping amount indicates a value obtained using the focusing means 1202 shown in FIG. FIG. 3A illustrates an example of a semiconductor device placed on a flat surface of the measurement surface plate 1200. A semiconductor device illustrated in FIG. 3A is a device whose initial state is warped, and includes an antenna portion 1203 and an integrated circuit portion 1204 including a TFT. FIG. 3B shows an example in which the direction of warping differs from that of FIG. The semiconductor device illustrated in FIG. 3B is also a device whose initial state is warped, and includes an antenna portion 1213 and an integrated circuit portion 1214 including a TFT. In the present embodiment, either form can be taken depending on the layout.

  Finally, it is possible to obtain a state shown in FIG. By maintaining the warp in the initial state, it is possible to make the front and back easier to understand. Further, when the warp is made to be opposite to the warp in the initial state, the fragile surface side can be easily understood. Further, by warping the initial state of the semiconductor device, it becomes easy to pick up a device placed on a flat surface even if it is a very thin device. FIG. 4F shows an example in which the direction in which the device is warped and the channel direction of the TFT 413c are matched. However, there is one when the TFT size is very small and the warping amount is small. One TFT is not bent, and the portion without TFT is bent. However, if the amount of warpage is large or the TFT size is large, the TFT itself may be bent. Therefore, as shown in FIG. 10A, the direction in which the device is warped differs from the channel direction of the TFT. Preferably.

  FIG. 11 shows an example of a device that is partially warped. In FIG. 11, a portion where the antenna portion 1504 and the integrated circuit portion 1503 are not provided is warped. Since the portion other than the warped portion is flat, the device 1501 can be easily attached to a flat article or the like. Further, when the device 1501 is attached to an article or the like and then peeled off for some reason, the warped portion 1502 can be easily picked and picked up.

  Further, by making at least a part of the warped state, the front surface and the back surface of the device 1501 can be distinguished. Note that since the device 1501 is thin, it can be read on the back side or the front side, that is, the reading device can be read on the opposite side of the device 1501 even if it is on the layer side including the antenna. It is.

  Moreover, although the example fixed with one film was shown in this Embodiment, you may fix so that it may pinch | interpose with two films. For example, the peelable layer 413 including the element may be sandwiched and fixed by two films (films after uniaxial stretching) having the same stretching direction. Alternatively, the peelable layer 413 may be warped with a plurality of films having different thermal expansion coefficients.

  In addition, the layer to be peeled 413 is sandwiched between the first film and the second film, and the second film disposed on the layer side including the thin film transistor rather than the thermal contraction rate of the first film disposed on the layer side including the antenna. The heat shrinkage rate of the film may be reduced.

  Further, at the time of laminating, at least a part of the device may be warped by warping the laminate film.

  In this embodiment mode, an amorphous silicon film can be used instead of the tungsten film used for the separation layer. The amorphous silicon film can also be removed by a gas or liquid containing fluorine halide. The amorphous silicon film can cause ablation by laser light. Therefore, when an amorphous silicon film is used for the separation layer, the first separation treatment for partially removing the separation layer with a gas or liquid containing halogenated fluorine is performed, and then the remaining separation layer is irradiated with laser light. The layer to be peeled may be separated from the substrate by performing the second peeling treatment.

  Further, a silicon oxide film can be used instead of the tungsten film used for the separation layer. In the case where a silicon oxide film is used for the separation layer, after the first peeling treatment for partially removing the separation layer with hydrofluoric acid (HF) is performed, the remaining separation layer is irradiated with laser light to adhere to the substrate. The layer to be peeled may be separated from the substrate by performing a second peeling treatment for reducing the property. Note that when hydrofluoric acid (HF) is used, the glass substrate is partially dissolved. Further, in the case of using hydrofluoric acid (HF), it is preferable to protect the layer to be peeled with a resin.

(Embodiment 3)
In this embodiment, an example of a manufacturing apparatus of a thin film integrated circuit is shown.

FIG. 6A shows a manufacturing apparatus that warps the device of Embodiment 1 by a laminating process.

  The manufacturing apparatus shown in FIG. 6A includes a film feed roll 1401, a take-up roll 1402, transport rolls 1403 and 1404, a substrate moving arm 1409, and rolls 1410 and 1411. .

  According to the first embodiment, the state shown in FIG. 1E is obtained, and the first film 19a is held by the substrate moving arm 1409 by a vacuum chuck or the like. In addition, the same code | symbol is used for the part which is common in FIG. Note that a first adhesive layer 18a is provided on the first film 19a, and a layer 1408 including an antenna and a layer 1407 including a TFT are bonded by the first adhesive layer 18a.

The first film 19a is simply put on the laminate film fed from the film feeding roll 1401 by pressing it with the substrate moving arm 1409. After the pressing, the vacuum chuck is turned off to release the first film 19a.

  The film on which the first film 19a is placed is carried by a transport roll 1404 and the like, and is laminated by a roll 1410 to be heated and a roll 1411. Note that a roll to be heated is disposed on the side including the TFT-containing layer 1407 so that the thin film integrated circuit after the lamination process is warped. Then, alignment of the laminate is controlled by an alignment device 1414, for example, a CCD camera, and the lamination process is performed. Note that a thin film integrated circuit refers to a device formed by stacking a layer 1408 including an antenna and a layer 1407 including a TFT, and the antenna is electrically connected to the TFT.

  After that, the thin film integrated circuit which is warped with the layer side including the antenna inside is wound on a winding roll 1402.

  Through the above steps, the device of Embodiment 1 can be warped by a laminating process. In the manufacturing apparatus shown in FIG. 6A, the laminate film is transported in a predetermined warping direction.

  FIG. 6B shows a manufacturing apparatus for protecting the device warped in the initial state shown in Embodiment Mode 2 by laminating.

  The manufacturing apparatus shown in FIG. 6B includes a film feed roll 1421, a take-up roll 1422, a plurality of transport rolls, a substrate moving arm 1428, a film feed roll 1423, and a laminating roll. And have.

  After obtaining the state of FIG. 4D according to Embodiment Mode 2, the substrate 410 having an insulating surface is turned upside down and held by the substrate moving arm 1428 having a quartz window. A thin film integrated circuit is fixed to the substrate 410 having an insulating surface by the remaining separation layer 411b. Note that a thin film integrated circuit refers to a device including a layer 1427 including an antenna and a layer 1426 including a TFT, and the antenna is electrically connected to the TFT.

  Then, as shown in FIG. 6B, a thin film integrated circuit formed by stacking a layer 1427 including an antenna and a layer 1426 including a TFT by irradiating light through a substrate 410 having an insulating surface. Is put on a roll 1421 for feeding out the film. Note that the roll diameter is preferably set as appropriate so that the warpage of the thin film integrated circuit and the film feeding roll 1421 substantially coincide with each other.

The film delivered from the film delivery roll 1421 is provided with an adhesive layer on the outer side, and is transported with the thin film integrated circuit adhered thereto. Then, after being laminated with a laminate film fed from another film feeding roll 1423, the film is wound on a winding roll 1422.

If necessary, the alignment of the laminate is controlled by an alignment device 1424, for example, a CCD camera.

  Through the above steps, the laminating process can be performed while maintaining the warpage of the device of the second embodiment. In the manufacturing apparatus shown in FIG. 6B, the device is structured such that it cannot be bent in the direction opposite to the warping direction in the initial state. In addition, the laminate film is transported in a predetermined warping direction.

  Further, this embodiment mode can be freely combined with Embodiment Mode 1 or Embodiment Mode 2.

(Embodiment 4)
In this embodiment, an example of a method for manufacturing a thin film integrated circuit is described.

First, a layer to be peeled including a semiconductor integrated circuit (CPU here) and a terminal electrode (not shown) is formed over a first substrate.

A separation layer, here a tungsten film (thickness 10 nm to 200 nm, preferably 30 nm to 75 nm) is formed on the substrate by sputtering, and an oxide film, here a silicon oxide film (thickness 150 nm), without being exposed to the atmosphere. To 200 nm). The thickness of the oxide film is preferably at least twice the thickness of the separation layer. Note that when the stack is formed, an amorphous metal oxide film (tungsten oxide film) is formed between about 2 nm to 5 nm between the separation layer and the silicon oxide film.

Note that since sputtering is performed on the substrate end surface, it is preferable to selectively remove the tungsten film, the tungsten oxide film, and the silicon oxide film formed on the substrate end surface by O ₂ ashing or the like.

Next, a silicon oxynitride film (film thickness: 100 nm) (not shown) to be a base insulating film is formed by a PCVD method, and an amorphous silicon film (film thickness: 100 nm) containing hydrogen is stacked without being exposed to the atmosphere.

  Next, the amorphous silicon film is crystallized by a known technique (solid phase growth method, laser crystallization method, crystallization method using a catalytic metal, etc.), and an element using a TFT having a polysilicon film as an active layer is obtained. Form. Here, a polysilicon film is obtained using a crystallization method using a catalytic metal. A nickel acetate solution containing 10 ppm of nickel by weight is applied by a spinner. Note that a nickel element may be dispersed over the entire surface by sputtering instead of coating. Next, heat treatment is performed for crystallization, so that a semiconductor film having a crystal structure (here, a polysilicon layer) is formed. Here, after heat treatment (500 ° C., 1 hour), heat treatment for crystallization (550 ° C., 4 hours) is performed to obtain a silicon film having a crystal structure.

  As another crystallization method, after adding a metal element as a catalyst to an amorphous silicon film, heating to obtain a polysilicon film, and then obtaining a polysilicon film irradiated with a pulsed laser beam. It may be used, or a method of obtaining a polysilicon film by irradiating the amorphous silicon film with a continuous oscillation type laser beam, or a continuous oscillation type after heating the amorphous silicon film to obtain a polysilicon film may be used. The method may be used to obtain a polysilicon film by irradiating the laser beam, or after adding a metal element as a catalyst to the amorphous silicon film and heating to obtain the polysilicon film, the continuous oscillation type laser light May be used to obtain a polysilicon film.

The amorphous silicon film contains hydrogen. When a polysilicon film is formed by heating, if a heat treatment at about 410 ° C. or higher is performed for crystallization, hydrogen can be diffused simultaneously with the formation of the polysilicon film. . Further, by performing heat treatment at 410 ° C. or higher, the amorphous metal oxide film is crystallized, and a metal oxide film having a crystal structure is obtained. By performing the heat treatment at 410 ° C. or higher, a metal oxide film having a crystal structure is formed, and hydrogen is diffused.

Next, after removing the oxide film on the surface of the silicon film having a crystal structure with dilute hydrofluoric acid or the like, irradiation with laser light (XeCl: wavelength 308 nm) for increasing the crystallization rate and repairing defects left in the crystal grains In the air or in an oxygen atmosphere.

Next, in addition to the oxide film formed by the laser light irradiation, the surface is treated with ozone water for 120 seconds to form a barrier layer made of an oxide film having a total thickness of 1 to 5 nm. This barrier layer is formed in order to remove nickel added for crystallization from the film. Note that the oxide film formed by laser light irradiation may be removed before the barrier layer is formed.

Next, an amorphous silicon film containing an argon element serving as a gettering site is formed with a thickness of 10 nm to 400 nm, here 100 nm, over the barrier layer by a sputtering method or a PCVD method.

After that, heat treatment is performed for 3 minutes in a furnace heated to 650 ° C., and gettering is performed to reduce the nickel concentration in the semiconductor film having a crystal structure. A lamp annealing apparatus may be used instead of the furnace.

Next, the amorphous silicon film containing an argon element as a gettering site is selectively removed using the barrier layer as an etching stopper, and then the barrier layer is selectively removed with dilute hydrofluoric acid. Note that during gettering, nickel tends to move to a region with a high oxygen concentration, and thus it is desirable to remove the barrier layer made of an oxide film after gettering.

  Note that in the case where crystallization is not performed using a catalytic element, the above-described steps such as formation of the barrier layer, formation of the gettering site, heat treatment for gettering, removal of the gettering site, and removal of the barrier layer are performed. It is unnecessary.

  Next, after forming a thin oxide film with ozone water on the surface of the obtained silicon film having a crystal structure (also called a polysilicon film), a mask made of resist is formed and etched into a desired shape to form islands. A separated semiconductor layer is formed. After the semiconductor layer is formed, the resist mask is removed.

  Next, after forming a gate insulating film covering the semiconductor layer, a gate electrode is formed on the gate insulating film, a source region or a drain region is formed by doping the active layer, and an interlayer insulating film (inorganic insulating film) is formed. A top gate TFT having a polysilicon film as an active layer is manufactured by appropriately performing formation, formation of a source or drain electrode, activation treatment, hydrogenation treatment, and the like. Note that an n-channel TFT can be formed when phosphorus that imparts n-type is added as an impurity element to be doped, and a p-channel TFT is formed when boron that imparts p-type is added. If these are combined, a CMOS circuit can be manufactured.

  Here, the top gate type example is shown as the TFT structure, but the TFT structure is not particularly limited, and may be, for example, a bottom gate type or a forward stagger type.

  Using the semiconductor layer made of the polysilicon film thus obtained, various elements typified by TFTs (thin film diodes, photoelectric conversion elements consisting of PIN junctions of silicon, silicon resistance elements and sensor elements (typically polysilicon) Can be formed.

  In this manner, a layer to be peeled including a circuit having an element is formed.

  In the subsequent steps, according to the second embodiment, the first separation process for removing a part of the separation layer is performed, and the second separation process for irradiating the remaining separation layer with laser light is performed to remove the separation layer from the substrate. What is necessary is just to separate.

  Further, when an amorphous film is used as the separation layer instead of the tungsten film, the first separation process of selectively irradiating with laser light is performed according to Embodiment 1, and separation is performed using the irradiated and ablated portion. A second peeling process for removing the layer by etching may be performed to separate the layer to be peeled from the substrate.

  Further, this embodiment mode can be freely combined with Embodiment Mode 1, Embodiment Mode 2, or Embodiment Mode 3.

(Embodiment 5)
A thin film integrated circuit manufactured according to the present invention includes a plurality of elements and a conductive layer functioning as an antenna. The plurality of elements correspond to, for example, a thin film transistor, a capacitor element, a resistance element, a diode, and the like.

The thin film integrated circuit 210 has a function of communicating data without contact, and a plurality of elements included in the thin film integrated circuit 210 form various circuits. For example, a power supply circuit 211, a clock generation circuit 212, a data demodulation / modulation circuit 213, a control circuit 214, an interface circuit 215, a memory 216, a data bus 217, an antenna (also referred to as an antenna coil) 218, and the like are included (see FIG. 7).

The power supply circuit 211 is a circuit that generates various power supplies to be supplied to each of the above circuits based on the AC signal input from the antenna 218. The clock generation circuit 212 is a circuit that generates various clocks to be supplied to each of the above circuits based on the AC signal input from the antenna 218. The data demodulation / modulation circuit 213 has a function of demodulating / modulating data communicated with the reader / writer 219. The control circuit 214 corresponds to, for example, a central processing unit (CPU, Central Processing Unit), a microprocessor (MPU, MicroProcessor Unit), and the like, and has a function of controlling other circuits. The antenna 218 has a function of transmitting and receiving an electromagnetic field or a radio wave. The reader / writer 219 controls communication with the thin film integrated circuit, control, and processing related to the data.

Note that the circuit included in the thin film integrated circuit is not limited to the above-described configuration, and may be a configuration in which other components such as a power supply voltage limiter circuit and cryptographic processing dedicated hardware are added.

  This embodiment mode can be freely combined with any one of Embodiment Modes 1 to 4.

(Embodiment 6)
The thin film integrated circuit manufactured according to the present invention has a wide range of uses. For example, foods (labels, etc., see FIG. 8A), packaging containers (wrapping paper, bottles, etc., see FIG. 8B) It can be used in vehicles (such as bicycles, see FIG. 8C), personal items (such as bags and glasses, see FIG. 8D), clothing, daily necessities, electronic devices, and the like. Electronic devices refer to liquid crystal display devices, EL display devices, television devices (also simply referred to as televisions, television receivers, television receivers), mobile phones, and the like.

  The thin film integrated circuit obtained by the present invention is warped in the initial state. Therefore, it is preferable to provide various articles, typically curved surfaces, in accordance with warpage. By warping in the initial state, the front and back sides can be clearly determined, so that mistakes in attaching to the article can be reduced.

Note that the thin film integrated circuit is fixed to the article by being attached to the surface of the article or embedded in the article. For example, a package made of an organic resin may be embedded in the organic resin. In addition, by providing thin film integrated circuits in packaging containers, recording media, personal items, foods, clothing, daily necessities, electronic devices, etc., the efficiency of inspection systems and rental store systems can be improved. . Forgery and theft can be prevented by providing a thin film integrated circuit in a vehicle.

Further, by applying the thin film integrated circuit to a system for managing and distributing objects, it is possible to improve the function of the system. For example, the reader / writer 295 is provided on the side surface of the portable terminal including the display portion 294, and the thin film integrated circuit 296 is provided on the side surface having a curved surface of the article 297 (see FIG. 9A). In this case, when the thin film integrated circuit 296 is held over the reader / writer 295, the display unit 294 displays information such as the raw material and origin of the article 297, the history of distribution process, and the like. As another example, a reader / writer 295 is provided on the side of the belt conveyor (see FIG. 9B). In this case, the inspection of the article 297 can be easily performed.

  This embodiment mode can be freely combined with any one of Embodiment Modes 1 to 5.

  According to the present invention, since the peeling process can be performed in a plurality of processes, mass production can be efficiently performed even when a large area substrate is used. In addition, by performing the peeling process in a plurality of times, a production line for intermittent conveyance with a predetermined tact can be constructed. In addition, the overall process time of the semiconductor manufacturing process can be shortened.

8A and 8B are a cross-sectional view and a top view illustrating a method for manufacturing a thin film integrated circuit of the present invention. (Embodiment 1) 9 is a cross-sectional view illustrating a method for manufacturing a thin film integrated circuit of the present invention. (Embodiment 1) The perspective view of the thin film integrated circuit of this invention, and the figure which shows the definition of curvature amount. 9 is a cross-sectional view illustrating a method for manufacturing a thin film integrated circuit of the present invention. (Embodiment 2) 8A to 8D are top views illustrating a method for manufacturing a thin film integrated circuit of the present invention. (Embodiment 2) It is the figure which showed the manufacturing apparatus of the thin film integrated circuit. FIG. 10 is a block diagram illustrating a thin film integrated circuit. 10A and 10B each illustrate a usage pattern of a thin film integrated circuit. 10A and 10B each illustrate a usage pattern of a thin film integrated circuit. (A) is a perspective view which shows an example of the device of this invention, (B) is the sectional drawing. (C) is a perspective view which shows another example of the device of this invention, (D) is the sectional drawing. FIG. 3 is a perspective view showing an example of the device of the present invention.

Explanation of symbols

DESCRIPTION OF SYMBOLS 10 Substrate having insulating surface 11a Separation layer 11b Part of separation layer 11c Light irradiation region 12 Base insulation layer 13 Layer to be peeled 13a First interlayer insulation layer 13b Second interlayer insulation layer 13c TFT
18a first adhesive layer 18b first adhesive layer 19a first film 19b first film 20a second adhesive layer 20b second adhesive layer 21a second film 21b second film 210 thin film integrated circuit 211 power supply circuit 212 clock generation circuit 213 data demodulation / Modulation circuit 214 Control circuit 215 Interface circuit 216 Memory 217 Data bus 218 Antenna 219 Reader / writer 294 Display unit 295 Reader / writer 296 Thin film integrated circuit 297 Article 410 Substrate 411a having an insulating surface Separating layer 411b Remaining separating layer 412a Underlying insulating layer 412b Base insulating layer 413 Peeled layer 413a First interlayer insulating layer 413b Second interlayer insulating layer 413c TFT
413d Conductive layer 416 Protective layer 417 Layer to be peeled 418 Base insulating layer 1000 Surface plate 1001 Device 1002 Insular semiconductor layer 1003 Antenna portion 1004 Integrated circuit portion 1005 Longitudinal direction of antenna 1006 Short side direction of antenna 1007 Channel length direction 1008 Channel width Direction 1100 Surface plate 1102 Island-like semiconductor layer 1105 Longitudinal direction 1106 Antenna short direction 1107 Channel length direction 1108 Channel width direction 1111 Device 1113 Antenna portion 1114 Integrated circuit portion 1200 Measurement surface plate 1201 Device 1202 Focusing means 1203 Antenna Unit 1204 integrated circuit unit 1211 device 1213 antenna unit 1214 integrated circuit unit 1401 delivery roll 1402 take-up roll 1403 conveyance roll 1404 conveyance row 1407 Layer including TFT 1408 Layer including antenna 1409 Substrate moving arm 1410 Heating roll 1411 Roll 1414 Alignment device 1421 Feeding roll 1422 Winding roll 1423 Feeding roll 1424 Alignment device 1426 TFT including layer 1427 Antenna Layer 1428 Arm for moving substrate 1500 Article 1501 having plane 1502 Device 1502 Curved portion 1504 Antenna portion 1505 Integrated circuit portion

Claims (6)

Forming a separation layer on the surface of the substrate;
Forming a peeled layer including a semiconductor element and an antenna formed above the semiconductor element on the separation layer;
By exposing the separation layer to a gas or liquid that reacts with the separation layer and removing at least a part of the separation layer, the separation layer is warped with the antenna inside,
The first substrate and the layer to be peeled are formed by ablating the separation layer by irradiating a part of the separation layer remaining from the back surface side of the substrate with the front surface of the substrate facing down. And drop,
A method for manufacturing a semiconductor device, wherein the fallen peeled layer is transferred to a film. In claim 1 ,
The method for manufacturing a semiconductor device is characterized in that the channel length direction of the semiconductor element is arranged different from the direction in which the peeled layer warps. In claim 2 ,
A method for manufacturing a semiconductor device, wherein a thickness of the antenna in a direction parallel to the channel length direction is larger than a thickness of the antenna in a direction perpendicular to the channel length direction. Forming a separation layer on the surface of the substrate;
Forming a peeled layer including a semiconductor element and an antenna formed above the semiconductor element on the separation layer;
By exposing the separation layer to a gas or liquid that reacts with the separation layer and removing at least a part of the separation layer, the layer to be peeled is warped with the antenna inside,
The first substrate and the layer to be peeled are formed by ablating the separation layer by irradiating a part of the separation layer remaining from the back surface side of the substrate with the front surface of the substrate facing down. A separation method characterized by separating and dropping. In claim 4 ,
A peeling method, wherein a channel length direction of the semiconductor element is arranged to be different from a direction in which the peeled layer warps. In claim 5 ,
The stripping method, wherein a thickness of the antenna in a direction parallel to the channel length direction is larger than a thickness of the antenna in a direction perpendicular to the channel length direction.

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