JP4992205B2 - Processing method, display device, and semiconductor device - Google Patents

Description

  The present invention relates to a processing method, and a display device and a semiconductor device obtained by the processing method.

In a semiconductor device such as a display device, electrical conduction through a predetermined path is required to be achieved by selecting a position and a shape of a conductive film constituting a wiring or the like.
For example, in a display device in which a large number of pixels are arranged in a two-dimensional matrix, there are a large number of conductive films used for wiring of TFT (Thin Film Transistor) elements provided for controlling light emission in each pixel. A predetermined conduction path is formed by a position shape corresponding to the pixel arrangement.
In the case of such a display device, a plurality of types of wirings are provided according to the element characteristics of the target TFT element.

Specifically, for example, as shown in FIGS. 4A and 4B, in a display device 101 using organic electroluminescence (organic EL), a pixel having an anode 104 and a TFT element 105 as a driving element on a substrate 103. 106 is provided, and the signal line 107 and the current supply line 108 which extend independently in the vertical direction so as to partition the pixel 106, and the scanning line 109 (which is insulated from these and extending in the horizontal direction) ( A large number of broken lines are provided according to the arrangement of the pixels.
In each pixel 106, an organic layer 117 made of at least an organic light emitting material and a cathode 118 are laminated on the above-described anode 104, thereby forming a main light emitting structure.

In the operation of the pixel 106 by the wirings 107 to 109 in this display device 101, the signal line 107 is Y ₁ , the current supply line 108 is Y ₂ , and the scanning line 109 is X by using the equivalent circuit of the unit pixel shown in FIG. It described as ₁ and _{X 2.}
The equivalent circuit includes an organic EL light emitting unit EL, a first TFT transistor (MOS transistor) Tr1, a second TFT transistor (MOS transistor) Tr2, and a capacitor C. One main electrode (for example, source) of the second TFT transistor Tr2 is connected to the signal line Y1, the other main electrode (for example, drain) is connected to the current supply line Y2 through the capacitor C, and the gate electrode is the scanning line. Connected to X1. On the other hand, the anode of the light emitting portion EL is connected to the current supply line Y2 via the first TFT transistor Tr1, and the gate electrode of the first TFT transistor Tr1 is connected to the connection middle point of the second TFT transistor Tr2 and the capacitor C. Is done.

The operation of this equivalent circuit is as follows.
A current is constantly supplied to the current supply line Y2. When a scanning pulse is applied to the scanning line X1 and a required signal is supplied to the signal line Y1, the second TFT transistor Tr2 is turned on and a required signal is written to the capacitor C. Based on the written signal, the first TFT transistor Tr1 is turned on, a current corresponding to the signal amount is supplied to the light emitting unit EL through the current supply unit Y2, and the light emitting unit EL is lit and displayed.
A plurality of unit pixels are arranged in an XY matrix to form the display device 101.

By the way, in the manufacture of the display device 101, the conductive film constituting the wiring may be disconnected due to, for example, scratches (cracks) on the substrate surface or adhesion of foreign substances. Specifically, for example, as shown in FIG. 6, the conductive film constituting the wiring, that is, the signal line 107 in this example is separated into the first conductive film 110 and the second conductive film 111 with the separation portion 116 interposed therebetween. End up.
In such a display device in which driving of a large number of pixels is performed by a common wiring, when the disconnected wiring is, for example, a both-side driving wiring such as the current supply line 108, the pixel that does not emit light due to the disconnection. Although there is a possibility that (dark spot) may occur, the number is limited to about one pixel, and depending on the position of the separation part 116, the occurrence of the dark spot may be avoided without causing any trouble in light emission.

However, as described above with reference to FIG. 6, when the disconnected wiring is a one-side driving wiring such as the signal line 107, for example, the first conductive film 110 and the second conductive film that are opposed to each other with the separation portion 116 interposed therebetween. The conductive film 111 is electrically separated, and the second conductive film 111 on the downstream side cannot be electrically connected.
In this case, all the pixels located on the downstream side of the disconnection position, that is, the pixel corresponding to the separation point 116, are not subjected to electrical conduction with respect to the signal line 107. A so-called dark line occurs as an aggregate. Since the dark line is more easily recognized as a failure point when the display device is used, the occurrence of the dark line becomes a serious problem.

  On the other hand, as shown in FIG. 7A, a conductive auxiliary member 119 is directly deposited on the separated portion (defect) by a laser CVD (Chemical Vapor Deposition) method. There are known methods for achieving this. However, there are many cases where the cause of disconnection such as cracks and foreign matters described above remains in the separation portion 116, and the restoration of electrical continuity by repair work is greatly influenced by the depth of the cracks and the shape of the foreign matters. As shown in FIG. 7B, in spite of the repair work being performed, there is a case where the electrical continuity cannot be formed without compensating for the disconnection due to the step, and there is a possibility that various adverse effects on the wiring may be caused by the excessive repair work. .

To solve this problem, when a wiring is formed with a conductive film, and a disconnection occurs in the wiring, an insulating layer is formed on the wiring, and then a contact hole is formed in the insulating layer over the insulating layer. There has been proposed a technique for achieving electrical conduction by depositing and forming a connection member (see, for example, Patent Document 1).
JP 2003-280021 A

However, in the case of the method described in Patent Document 1, since the connecting member exposed on the insulating layer is exposed, the conductive characteristics of the connecting member may be deteriorated due to oxidation or the like, and the long-term reliability may be reduced. Connected.
In addition, since forming the contact hole extremely wide reduces the yield, the deposition of the connecting member through the contact hole must be performed through the narrow contact hole, which is a difficult task. In addition to prolonging the manufacturing period, there remains a problem that the thinly formed connecting member itself is likely to break.

  The present invention has been made in view of such a situation, and an object of the present invention is to provide a processing method for stably repairing a conductive film constituting a wiring or the like, and a highly reliable display obtained by the processing method. An object is to provide a device and a semiconductor device.

In the processing method according to the present invention, among the multiple conductive films provided on the substrate , each of the first and second conductive films including the signal lines that are one-side drive wirings separated by disconnection, and both-side drive A third conductive film made of a current supply line as a wiring is coupled by each of the first and second connection members formed by the laser CVD method, and a connecting portion from the first connection member to the second connection member is formed. A short circuit between the first and second conductive films and the third conductive film excluding the connecting portion is avoided after the joining step formed by the first and second connecting members and the third conductive film and after the joining step. As described above, a removing step of removing a part of the third conductive film leaving the connecting portion, and an insulating film forming step of forming an insulating film covering the first, second, and third conductive films after the removing step It is characterized by having.

The display device according to the present invention is a display device in which a large number of conductive films are provided on a substrate, and each of the first and second conductive films including signal lines that are one-side drive wirings separated by disconnection. the third conductive film made of the current supply line is a wiring on both sides drive, coupled by respective first and second connection member formed by the laser CVD method, the second connection member from the first connection member The connecting portion is formed by the first and second connecting members and the third conductive film, so that a short circuit between the first and second conductive films and the third conductive film excluding the connecting portion is avoided. A part of the third conductive film is removed leaving a connecting portion, and then an insulating film covering the first, second, and third conductive films is formed.

The semiconductor device according to the present invention is a semiconductor device in which a large number of conductive films are provided on a substrate, and each of the first and second conductive films including signal lines that are one-side drive wirings separated by disconnection. the third conductive film made of the current supply line is a wiring on both sides drive, coupled by respective first and second connection member formed by the laser CVD method, the second connection member from the first connection member The connecting portion is formed by the first and second connecting members and the third conductive film, so that a short circuit between the first and second conductive films and the third conductive film excluding the connecting portion is avoided. A part of the third conductive film is removed leaving a connecting portion, and then an insulating film is formed to cover at least a part of the first, second, and third conductive films. .

According to the processing method according to the present invention, the wiring of a semiconductor device such as a display device for an organic EL (Electro Luminescence) In example embodiment, it is possible to stably repaired.

Further, according to the display device according to the present invention, it is possible to avoid disconnection causes, such as cracks and foreign matters remaining on board establishing electrical conduction. Therefore, it is possible to suppress the occurrence of broken lines and maintain and improve display quality, and a highly reliable display device can be provided.

Further, according to the semiconductor device according to the present invention, it is possible to avoid disconnection causes, such as cracks and foreign matter remaining on the board promote repair of electrical conduction. Therefore, a highly reliable semiconductor device can be provided.

  Embodiments of the present invention will be described below with reference to the drawings.

<Embodiment of Display Device>
First, embodiments of a semiconductor device and a display device according to the present invention will be described.
FIG. 1 is a schematic perspective view of a main part of the display device according to the present embodiment.
The display device according to this embodiment is a display device including a main substrate obtained by a processing method to be described later, that is, a substrate in which an anode, a TFT element, and each wiring are formed on the main surface.

  As shown in FIG. 1, the display device 1 according to the present embodiment includes a plurality of pixels 6 each having an anode 4 and a TFT element 5 as a driving element provided on a substrate 3 in a two-dimensional matrix. A signal line 7 and a current supply line 8 extending in the vertical direction so as to partition each pixel 6, and a scanning line 9 (shown by a broken line) extending in the horizontal direction while being insulated from these wirings, Each has a main substrate 2 provided. On the main substrate 2, an organic layer and a cathode shown in FIG.

In the present embodiment, among the signal lines 7, the current supply lines 8, and the scanning lines 9, which are a large number of wirings made of a conductive film, provided corresponding to the arrangement of the plurality of pixels 6, for example, one-side driving signal lines. In FIG. 7, a separation point 16 is generated due to the disconnection, and the first conductive film 10 on the upstream side of electrical conduction, that is, the side closer to the power supply, and the first conductive film 10 located on the downstream side of electrical conduction are sandwiched between the separation places 16. The two conductive films 11 are configured to face each other.
However, in the display device according to the present embodiment, the first and second conductive films 10 and 11 are formed on both sides by applying the first and second connection members 12 and 13, respectively, by a processing method described later. Coupled with the third conductive film 14 constituting a current supply line by driving. Furthermore, of the third conductive film 14, at least a part of the third conductive film 14, for example, the first connection member 12 and the second connection member 13, except for the connecting portion 15 of the first conductive film 12 and the second conductive film 13. The outer two places with respect to the connecting portion 15 are removed. Thereby, the short circuit with the 1st and 2nd electrically conductive films 10 and 11 and the 3rd electrically conductive film 14 except the connection part 15 is avoided.

Further, in the present embodiment, the first and second connection members 12 and 13 that connect the first and second conductive films 10 and 11 and the third conductive film 14 are provided at the separation portion 16. Since it is provided apart from the above-mentioned cracks and foreign matters that have become the cause of occurrence, it is possible to suppress the occurrence of a new separation location due to the disconnection of the connecting member itself.
The first and second connecting members 12 and 13 are at least a part of the signal line 7 formed by the first and second conductive films 10 and 11 and the current supply line 8 made of other conductive films. Is formed prior to an insulating layer (not shown) for covering the substrate.

  Therefore, in the semiconductor device 2 according to the present embodiment, the first and second conductive films 10 and 11, the at least the connecting portion 15 of the third conductive film 12, and the first and second connection members. Since the structure up to 12 and 13 is covered with a common insulating layer, it is possible to achieve stable electrical conduction as compared with the conventional case of forming contact holes.

FIG. 2 is a schematic perspective view of the display device 1 according to this embodiment. The display device 1 has a large number of pixels 6 formed of an anode 4 and TFT elements 5 shown in FIG. 1 described above on a main substrate 2 partitioned by a signal line 7, a current supply line 8, and a scanning line 9. The organic layer 17 and the cathode 18 are laminated so as to be common.
As described above, the display device 1 according to this embodiment has a configuration in which at least the first and second conductive films 10 and 11 and the third conductive film 14 are covered with a common insulating layer (not shown). Therefore, it is possible to avoid the connection member from being exposed through the contact hole.

  Therefore, for example, as in the present embodiment, the first and second conductive films 10 and 11 are constituent members of signal wiring by one-side driving, and the third conductive film 14 is a constituent member of power supply lines by both-side driving. In some cases, since the exposure of the connecting member can be avoided, as shown in FIG. 2, it corresponds to the anode 4 constituting the pixel 6 formed in the insulating layer (not shown) on the surface of the semiconductor device 2. Through the opening, a light emitting structure having a configuration in which at least the organic layer 17 made of an organic light emitting material and the cathode 18 are directly stacked is possible.

<Embodiment of processing method>
Subsequently, an embodiment of the processing method according to the present invention will be described.
3A and 3B respectively show a schematic configuration diagram showing an example of a processing apparatus suitable for use in the processing method according to the present invention, and a schematic cross-sectional view of a local exhaust device constituting the processing apparatus.

  This processing device 21 is a so-called laser repair device, and in manufacturing a display device such as a liquid crystal display or an organic electroluminescence display, for example, a tungsten (W) film is formed on the disconnected portion by a laser CVD method and connected. Alternatively, it is used to correct a portion that may become a so-called defect by removing part of the short-circuit portion by laser light irradiation.

As shown at least in FIG. 3A, the laser processing apparatus 21 of the present embodiment includes a pulse laser light source unit 22, a CW (Continuous Wave) laser light source unit 23, and a local exhaust device 24 provided in a common chamber. And a support base 25.
In other words, the laser processing apparatus 21 with this configuration finally applies to the short-circuited portion based on, for example, light irradiation by the pulse laser light source unit 22 with respect to the substrate to be processed 26 that becomes the main substrate constituting the display device. While it is possible to perform the removal, the connection to the above-described disconnected portion can be performed based on the light irradiation by the CW laser light source unit 23.
Laser light from the pulse laser light source unit 22 and the CW laser light source unit 23 is introduced into the local exhaust device 24 through the mirror 27 and the lens 28, respectively, through the transparent window 38 in the transmission hole 40 that defines the optical path. .

The local exhaust device 24 has a compressed gas supply means 29 for statically floating the local exhaust device 24 by injecting compressed nitrogen toward the support base 25, and a compressed gas injected toward the support base 25 as a ring. Evacuating means 30 for evacuating from a gas-like exhaust channel (suction groove) 36, a purge gas supplying means 31 for supplying a purge gas to a local exhaust part 38 that is a main irradiated part of laser light, and laser CVD in the local exhaust part 38 A material gas supply means 32 serving as a source gas is provided.
The compressed gas from the compressed gas supply means 31 is supported by the ring-shaped compressed gas supply path 34 constituting the supply path and the ventilation hole and the porous ventilation film 33 disposed in the opening thereof so as to face the local exhaust device 24. The light is emitted toward the table 25 and floated by a so-called static pressure floating pad configuration.
Corresponding to the purge gas supply means 31 and the material gas supply means 32, flow paths 36 and 37 connected to the local exhaust part 38 are provided.

On the other hand, as shown in FIG. 3B, a local exhaust portion 38 is formed between the transparent window 39 and the placement portion of the substrate 26 in the region surrounded by the suction groove that constitutes the end portion of the exhaust passage 35. Is done. The local exhaust part 38 has a height from the transparent window 39 in the local exhaust apparatus 24 to the substrate 26 to be processed placed on the support base 25 and is compared with a concentric ring formed by the suction groove 35. It is considered that a substantially cylindrical space is formed inside.
In addition to the raw material gas supplied from the material gas supply means 32 and the purge gas supplied from the purge gas supply means 31, the local exhaust unit 38 is mainly transparent by selecting the pressure, speed, position, angle, etc. for introducing the purge gas. It is possible to suppress the occurrence of deposits on the surface of the window 39.

Further, the local exhaust device 24 can be displaced relative to the substrate 26 on the support base 25, and the material gas supply means 32, the purge gas supply means 31, and the exhaust means 30 have a floating rigidity. Improvement is achieved.
Here, the levitation rigidity is an adsorption force between the local exhaust device 24 and the substrate to be processed 26. If the levitation rigidity is not sufficient, the height of the local exhaust device 24 relative to the substrate to be processed ( It is desirable to ensure sufficient floating rigidity since problems such as insufficient stability of the gap) and insufficient mechanical or mechanical stability of the local exhaust device 24 occur. .

An embodiment of a processing method according to the present embodiment will be described using such a processing apparatus 21.
First, the substrate 26 to be irradiated with the laser light L from the pulse laser light source unit 22 and the CW laser light source unit 23 is placed on the support base 25 and then moved below the local exhaust device 24.
At this time, the compressed gas supply means 29 injects, for example, 0.2 MPa of compressed nitrogen through the compressed gas supply path 34 and the porous gas permeable membrane 33 and starts exhausting from the exhaust means 30, and the local exhaust device It is preferable to avoid collisions with the substrate to be processed 26 that has been moved by sufficiently raising the pressure 24 to a static pressure.

  Next, 50 sccm of argon gas is introduced from the purge gas supply means 31 and finally the irradiation with the laser light L is performed by the local exhaust means (not shown) serving as the main pressure adjusting means of the exhaust means 30 and the local exhaust section 24. The atmosphere at a predetermined position of the substrate to be processed 26 serving as the irradiated portion in FIG. At the same time, the pressure of the area other than the local exhaust part 38, that is, the peripheral part is adjusted to ensure the height and rigidity between the local exhaust apparatus 24 and the substrate 26 to be processed. The height can be, for example, a distance of 10 μm.

Next, gaseous tungsten carbonyl, which is a material gas for laser CVD, is introduced into the material gas supply source 32 together with 50 sccm of argon (Ar) gas, for example, 7 × 10 ⁻³ sccm, and further from the CW laser light source unit 23. Laser CVD is performed by irradiating the laser beam L. The first and second connecting members 12 and 13 are deposited by this laser CVD method, and the first and second conductive films 10 and 11 and the third conductive film 14 separated from each other are respectively formed into the first and second conductive films 10 and 11. And it couple | bonds via the 2nd connection members 12 and 13. FIG.
In this way, a bonding step is performed in which the disconnection due to the separation portion 16 between the first conductive film 10 and the second conductive film 11 is corrected by the connection with the third conductive film 14.

Next, while observing the laser irradiation part through the transparent window 39 of the local exhaust device 24, the support base 25 is moved to move the substrate 26 to be processed to a desired position. Thereafter, the local pumping means 38 emits the short pulse width laser light L from the pulsed laser light source unit 22 while continuing the local pumping to the local pumping unit 38, so that the first conductive film 12 of the third conductive film 14 The connection part 15 of the 2nd electrically conductive film 13 is left, and at least one part, for example, the outer two places with respect to the connection part 15 of the 1st connection member 12 and the 2nd connection member 13 is removed.
In this way, at least a part of the third conductive film 14 is prevented so that a short circuit between the first and second conductive films 10 and 11 and the third conductive film 14 excluding the connecting portion 15 is avoided. A removing step is performed in which the connecting portion 15 extending from the first connecting member 12 to the second connecting member 13 is left and removed.

  Note that these coupling step and removal step are performed prior to the formation of an insulating layer that covers at least a part of a large number of finally provided conductive films, for example, at least a part of the first conductive film 10 and the second conductive film 11. In this way, while ensuring electrical continuity between the first and second conductive films 10 and 11, for example, the reliability of the wiring member exposed through the contact hole is reduced, and the exposed wiring member Therefore, it is possible to avoid the necessity of providing an insulating layer again to cover the film.

  In this embodiment, the first and second conductive films 10 and 11 are formed as signal line constituent members by one-side drive, and the third conductive film is used as a current supply line constituent member by both-side drive. It is formed. Therefore, even if disconnection occurs in the third conductive film 14 due to the above-described removal process, the necessary current is supplied to the entire area of the current supply line by the third conductive film 14 except the connecting portion 15. In the display device obtained in this way, it is possible to limit the occurrence of dark spots to the pixels corresponding to the connecting portion 15 at the maximum while suppressing the occurrence of dark lines.

Further, it is preferable to appropriately select which part of the third conductive film such as a current supply line is used for the connecting portion 15. That is, for the third conductive film, the first and second connecting members 12 and 12 are selected by selecting a portion such as an adjacent inter-pixel portion that does not cause a dark spot even if it is removed by the above-described removal process. The connecting step can be performed by depositing 13, and the removing step can be performed so as to leave only the third conductive film 14 in the vicinity of the connecting portion 15 and leave the connecting portion 15.
That is, when the third conductive film 14 is considered to be able to further reduce the occurrence of dark spots by using a portion of the third conductive film 14 other than the portion closest to the separation portion 16 for the connecting portion 15, it is deposited. By selecting the deposition position such as increasing the shape of the connecting member, it is possible to perform more appropriate processing, and for example, it is possible to completely suppress the occurrence of dark spots in the display device.

Furthermore, prior to the bonding step and the removing step, it is preferable that the attachment position of the connecting member in at least one of the first and second conductive films 10 and 11 and the third conductive film 14 is tapered. .
Thereby, it is possible to avoid the occurrence of a step in the connection member due to a difference in height between the conductive film constituting each wiring and the substrate surface.

In the present embodiment, the poor electrical continuity due to the separation portion 16 between the first conductive film 10 and the second conductive film 11 which is a wiring member by one-side driving is referred to as third conductive which is a wiring member by both-side driving. Although the example corrected by the connection with the connecting portion 15 selectively provided in the film 14 has been described, in this case, the resistance values of at least the first conductive film 10 and the second conductive film 11 are preferably 100 μΩcm or less, It is preferable that the resistance values of the third conductive film 14 be as close as possible.
Moreover, as a material suitable for constituting each conductive film and each connection member having such a resistance value, aluminum (Al), titanium (Ti), aluminum-neodymium alloy (Al-Nd), It is preferable to use a material containing at least a part of a metal exemplified by molybdenum (Mo), copper (Cu), tungsten (W), and the like, thereby forming a wiring or the like.

<Example>
Next, examples of the processing method according to the present invention will be described.

First, while observing through the transparent window 39 of the local exhaust device 24, the support base 25 is operated and moved to a predetermined position.
Next, the size of a slit (not shown) provided between the mirror 27 and the lens 28 is adjusted to 5 μm □, and the attenuator of the pulse laser light source unit 22 is set to a wavelength of 390 nm, a pulse width of 3 picoseconds, a processing power (laser power). ) Set as 0.5 J / cm ² or more.
Under predetermined conditions, the pulse laser light source unit 22 irradiates a laser pulse a plurality of times, and a low angle (90) is applied to the attachment position of the connecting member in the first and second conductive films 10 and 11 and the third conductive film 14. (Less than °).

  Next, the attenuator of the CW laser light source unit 23 having a wavelength of 355 nm is set to a wavelength of 355 nm, 20000 Hz, and 0.1 W. First and second connecting members made of a metal film such as tungsten by the laser CVD method in which the slit size is 10 μm □, laser irradiation is performed at a scanning speed of 10 μm / sec, and a material gas such as tungsten carbonyl is flowed, for example. 12 and 13 are deposited and formed at two locations, and a bonding step is performed.

Next, in order to avoid a short circuit between the first and second conductive films 10 and 11 and the third conductive film 14, at least part of the third conductive film 14 is subjected to a predetermined laser pulse source 22. Removal is performed by laser light irradiation.
With these coupling step and removal step, it is possible to avoid the occurrence of a dark line by repairing the signal line for one side drive while minimizing the occurrence of a dark spot.

  The processing method and the embodiment of the display device and examples of the present invention have been described above, but the numerical conditions such as the materials used and the amount thereof mentioned in the description of the above embodiments are only suitable examples and are described in the description. The dimensional shape and the arrangement relationship in each figure used are also schematic. That is, the present invention is not limited to this embodiment, and various modifications and changes can be made.

For example, an insulating layer can be formed after processing by the processing method according to the present invention, and processing by a method of opening a contact hole in the insulating layer can also be performed.
That is, for example, after the signal line is repaired by the processing method according to the present invention, it is also possible to separately connect the third conductive film constituting the current supply line by a connection method through a contact hole.

Further, for example, in the present embodiment, the processing method according to the present invention has been described by taking the repair of the signal line as an example. However, according to the processing method according to the present invention, other wiring such as a scanning line can also be repaired.
Further, for example, it is possible to perform processing by forming a connecting portion using a wiring other than the current supply line as the third conductive film. Here, as long as it is performed prior to the formation of a large number of conductive films exemplified by at least the first conductive film and the second conductive film, it is not always necessary to be close to the third conductive film that finally becomes the connection portion. As described above, the shape of the connecting member may be lengthened as necessary.

  The above-described embodiment is a case where the present invention is applied to an organic EL display device as a semiconductor device. In addition, a semiconductor device other than a display device, for example, a plurality of wirings are formed, and one-side driving wiring and both sides are formed. The present invention can also be applied to a semiconductor device having a plurality of wirings including a driving wiring.

  That is, for example, when the required wiring for one-side drive constituting the semiconductor device is disconnected in part, the processing method according to the present invention described above, that is, the laser repair method is used to connect the both-side drive wiring and the disconnected conductive films. The wiring can be repaired by connecting and cutting at least a part of the both-side drive wiring across the connecting portion. According to the semiconductor device subjected to this processing, the defect due to the disconnection of the wiring caused by the cracks or foreign matters remaining on the substrate is reproduced, so that the manufacturing yield and quality can be improved, and the reliability can be improved. A high semiconductor device can be provided.

It is a schematic perspective view which shows the structure of the principal part of an example of the display apparatus comprised with the semiconductor device which concerns on this invention which can be produced with the processing method which concerns on this invention. It is a schematic perspective view which shows the structure of an example of the display apparatus comprised with the semiconductor device which concerns on this invention which can be produced with the processing method which concerns on this invention. Each of A and B is a schematic block diagram showing a configuration of an example of a processing apparatus suitable for the processing method according to the present invention, and a schematic cross-sectional view of a local exhaust device that constitutes the processing apparatus. They are a schematic perspective view showing a configuration of a conventional display device using a conventional semiconductor device, and a schematic sectional view of a part thereof. It is an equivalent circuit diagram with which it uses for description of the drive method of the display apparatus comprised by many pixels. It is a schematic perspective view which shows the structure of the conventional display apparatus by the conventional semiconductor device. It is a schematic perspective view which shows the structure of the conventional display apparatus by the conventional semiconductor device.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 ... Display apparatus, 2 ... Main board | substrate, 3 ... Board | substrate, 4 ... Anode, 5 ... TFT element, 6 ... Pixel, 7 ... Signal line, 8 ... Current supply line, 9 ... scanning line, 10 ... first conductive film, 11 ... second conductive film, 12 ... first connection member, 13 ... second connection member, ... 3rd conductive film, 15 ... connection part, 16 ... separation part, 17 ... organic layer, 18 ... cathode, 21 ... processing apparatus, 22 ... pulse laser light source part, 23 ... CW laser light source, 24 ... Local exhaust device, 25 ... Support base, 26 ... Substrate to be processed, 27 ... Mirror, 28 ... Lens, 29 ... Compressed gas supply Means 30 ... exhaust means 31 ... purge gas supply means 32 ... material gas supply means 33 ... porous gas permeable membrane 34 ... compressed gas supply 35 ... exhaust channel (suction groove), 36 ... purge gas channel, 37 ... material gas channel, 38 ... local exhaust part, 39 ... transparent window, 40 ... permeation Hole 101, conventional display device, 103 ... substrate, 104 ... anode, 105 ... TFT element, 106 ... pixel, 107 ... signal line, 108 ... current supply line 109 ... scanning line 116 ... separation part 117 ... organic layer 118 ... cathode 119 ... auxiliary member

Claims (6)

Of the large number of conductive films provided on the substrate , each of the first and second conductive films made of signal lines that are one-side drive wirings separated by disconnection, and current supply lines that are both-side drive wirings The third conductive film is coupled by each of the first and second connection members formed by the laser CVD method, and a connection portion from the first connection member to the second connection member is connected to the first and second connection members . A bonding step formed by the connecting member and the third conductive film ;
After the bonding step, a part of the third conductive film is left leaving the connection part so that a short circuit between the first and second conductive films and the third conductive film excluding the connection part is avoided. A removal step to remove;
And an insulating film forming step of forming an insulating film covering the first, second and third conductive films after the removing step .   2. The processing method according to claim 1, wherein, prior to the joining step and the removing step, the attachment position of the connection member is tapered in at least one of the first to third conductive films.   2. The processing method according to claim 1, wherein the connecting portion extends in parallel with the first and second conductive films and is adjacent to a portion where the first conductive film and the second conductive film are separated.   The processing method according to claim 1, wherein the first and second conductive films have a resistance value of 100 μΩcm or less. A display device in which a number of conductive films are provided on a substrate,
A first conductive film and a second conductive film , each of which is a signal line that is a single-sided drive line separated by disconnection, and a third conductive film that is a current supply line that is a double-sided drive line are formed by laser CVD. The first and second connecting members are joined by the first and second connecting members, and a connecting portion from the first connecting member to the second connecting member is formed by the first and second connecting members and the third conductive film. ,
After removing a part of the third conductive film leaving the connection part, so as to avoid a short circuit between the first and second conductive films and the third conductive film excluding the connection part,
A display device configured by forming an insulating film covering the first, second and third conductive films. A semiconductor device in which a number of conductive films are provided on a substrate,
A first conductive film and a second conductive film , each of which is a signal line that is a single-sided drive line separated by disconnection, and a third conductive film that is a current supply line that is a double-sided drive line are formed by laser CVD. The first and second connecting members are joined by the first and second connecting members, and a connecting portion from the first connecting member to the second connecting member is formed by the first and second connecting members and the third conductive film. ,
After removing a part of the third conductive film leaving the connection part, so as to avoid a short circuit between the first and second conductive films and the third conductive film excluding the connection part,
A semiconductor device configured by forming an insulating film covering the first, second and third conductive films.

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