JP4966312B2 - EUV light generator and EUV exposure apparatus - Google Patents

Description

  The present invention relates to an EUV (Extreme Ultraviolet) light generator and an EUV exposure apparatus using the same as a light source.

  An exposure apparatus that uses EUV light having a shorter wavelength than visible light or ultraviolet light has been developed with a finer circuit pattern as the degree of integration of semiconductor elements increases. As an EUV light source for an EUV exposure apparatus, a plasma light source and a radiation (SOR: Synchrotron Orbital Radiation) light source are known.

  Plasma light sources include laser plasma (LPP: Laser Produced Plasma) EUV light sources and discharge plasma (DPP: Discharge Produced Plasma) EUV light sources. As a target material used in a plasma light source, Xe gas or liquefied Xe is often used because a relatively high conversion efficiency is obtained and debris (scattered particles) are hardly generated (the obtained EUV). The wavelength of light is 13.5 nm). In addition, in order to obtain a higher-power EUV light source, the use of Sn having a higher conversion efficiency than Xe has been studied. Patent Document 1 below discloses a method of using liquid Sn in order to solve the problem (occurrence of a large amount of debris) when using Sn as a target material and realize high conversion efficiency.

  A radiation light source using a deflecting magnet or an undulator generates high-quality EUV light, but its power is about 50 mW.

On the other hand, it is known that the Miracle-type radiation light source can generate EUV light of about 1 W by transition radiation generated by causing an electron beam to collide with a thin film.
JP 2006-13033 A D. Minkov, H. Yamada, N. Toyosugi, T. Yamaguchi, T. Kadono and M. Morita, Journal of Synchrotron Radiation, ISSN 0909-0495, (2006)

  However, the plasma EUV light source has a problem that the conversion efficiency into EUV light is low, and debris is generated, which adheres to a mirror or the like and degrades the performance of the optical system. Although Patent Document 1 makes it easy to remove debris attached to a mirror or the like, the occurrence of debris cannot be eliminated.

  Since the plasma EUV light source has a large emittance, only a part of the generated EUV light can be used, which is inefficient and requires a large amount of power to be used as a light source for EUV exposure. Yes.

  Also, EUV light has poor reflection efficiency, and even if a mirror is formed in a multilayer film, the reflectivity is about 70%, and an output of about 100 W or more is required for a semiconductor process. However, with a conventional plasma EUV light source, It is not easy to realize high output EUV light.

  Ordinary radiation sources and Miracle-type radiation sources have low emittance and high conversion efficiency, but have insufficient power for EUV exposure.

  Accordingly, an object of the present invention is to provide an EUV light generation apparatus and an EUV exposure apparatus capable of outputting EUV light having a sufficient intensity and a small emittance for use in a semiconductor process without causing the above-described problems of the plasma EUV light source. It is to provide.

  Furthermore, an object of the present invention is to provide an EUV exposure apparatus in which the number of elements of the projection optical system is reduced and the exposure intensity is improved.

  The object of the present invention is achieved by the following means.

  That is, an EUV generation apparatus according to the present invention is arranged on a synchrotron, a plurality of thin-film or wire-like targets that are arranged on a circular orbit of electrons inside the synchrotron, and generate EUV light upon incidence of electrons. A magic mirror that reflects the EUV light in a predetermined direction, and an output port that extracts the EUV light reflected by the magic mirror to the outside of the synchrotron, and collects the EUV light reflected by the magic mirror. It is characterized by being light or parallel light.

  In the EUV generation apparatus, each of the plurality of targets may be arranged so as not to block EUV light generated from the other targets.

  The target is a thin film having a width of 10 nm or more and 100 μm or less, and is a single layer made of a substance that easily generates EUV light, or a multilayer made of a substance that easily generates EUV light and a substance that does not easily generate EUV light. Can be formed.

  The target may be a wire having a thickness of 10 nm or more and 10 μm or less, and may be formed of a material that easily generates a single EUV light.

  The substance that easily generates EUV light is a substance selected from the group consisting of C, Be, Mg, Al, Ca, Zn, Ga, Sn, Pt, and Pb, and generates EUV light. The difficult material can be a vacuum or a material selected from the group consisting of K, Cu, Ge, Rb, Ag, In, Cs, Ba, and Au.

  An EUV exposure apparatus according to the present invention includes an EUV light source and an optical system that irradiates a reticle with EUV light from the EUV light source and exposes and transfers a pattern formed on the reticle onto a photosensitive film on a wafer. An EUV light source is the EUV light generator.

In the EUV exposure apparatus, the optical system reflects the EUV light to be output as parallel light from the EUV light generator, the first mirror to be incident on the reticle (M _1), it is reflected by the reticle A second mirror (M ₂ ) that irradiates the photosensitive film with EUV light focused in the width direction of parallel light may be provided.

The EUV light output as parallel light from the EUV light generation apparatus is incident on the reticle, and the optical system squeezes the EUV light reflected by the reticle in the width direction of the parallel light on the photosensitive film. it may be provided with a mirror to be irradiated _{(M 3} or _{M 7).}

The optical system reflects the EUV light output as parallel light from the EUV light generation apparatus, and reflects the first mirror (M ₄ ) incident on the reticle and the EUV light reflected by the reticle. a second mirror (M _5), the EUV light reflected by the second mirror may comprise a third mirror which is irradiated on the photosensitive film concentrates in the width direction of the parallel light (M ₆₎ .

  According to the present invention, EUV light having an intensity of 10 W or more can be output in a desired direction.

  Further, by converging EUV light output from the EUV light generation apparatus of the present invention at a predetermined focal point, it is possible to use an optical system of a conventional EUV exposure apparatus in a semiconductor process. That is, the EUV light generation apparatus of the present invention can be used as an EUV light source in place of a conventional laser plasma EUV light source or discharge plasma EUV light source.

  Further, since the EUV light output from the EUV light generation apparatus of the present invention has a high parallelism and has an elongated beam cross-sectional shape, the number of mirrors of the EUV exposure apparatus can be reduced by outputting it as parallel light. it can. Therefore, it is possible to suppress the reduction of the light intensity due to the reflection of the mirror, and the EUV light generated at the target can be used efficiently. This means that EUV light having a lower intensity than before can be used for exposure in a semiconductor process.

It is a top view which shows schematic structure of the EUV generator which concerns on embodiment of this invention. It is the fragmentary top view which expanded and showed the target vicinity of FIG. It is a top view in case a target is inclined and arrange | positioned. It is sectional drawing perpendicular | vertical to the optical path of the parallel EUV light output from the EUV generator which concerns on embodiment of this invention. It is a figure which shows schematic structure of the EUV exposure apparatus which concerns on embodiment of this invention. It is a figure which shows schematic structure of the EUV exposure apparatus which concerns on embodiment of this invention provided with the optical system different from FIG. It is a figure which shows schematic structure of the EUV exposure apparatus which concerns on embodiment of this invention provided with the optical system different from FIG. It is a figure which shows schematic structure of the EUV exposure apparatus which concerns on embodiment of this invention provided with the optical system different from FIGS. It is sectional drawing which shows an example of the conventional optical system of EUV exposure apparatus. It is sectional drawing which shows another example of the conventional optical system of EUV exposure apparatus.

Explanation of symbols

1 Synchrotron ring part 2 Electron beam (electron orbit)
3 magic mirror 4 output port L, L _{1 to} L ₄ EUV light T, T _{1 to} T ₄ target r radius of electron orbit d target distance t target thickness w target width F focus O electron orbit Center M _{1 to} M ₇ first to seventh mirrors IR _{1 to} IR ₄ reflecting mirrors PR _{1 to} PR ₄ and PM _{1 to} PM ₆ constituting the projection optical system R reflecting mirror R reticle W wafer

  Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings.

(EUV light generator)
FIG. 1 is a plan view showing a schematic configuration of an EUV light generation apparatus according to an embodiment of the present invention. The EUV light generation apparatus according to the present embodiment includes a synchrotron ring unit 1 that circulates electrons therein, a plurality of targets T arranged on an electron orbit (also referred to as an electron beam) 2, and a target T A magic mirror 3 that reflects the emitted EUV light L and an output port 4 that extracts the EUV light L reflected by the magic mirror 3 to the outside of the synchrotron ring unit 1 are configured.

  In FIG. 1, the time change of the current of the equipment necessary for constituting the synchrotron, for example, the magnet (electromagnet, permanent magnet) and the electromagnet provided in the synchrotron ring unit 1 to control the orbit of electrons is shown. A control device for controlling, an injector for generating electrons and guiding them to the synchrotron ring unit 1 are omitted. As a result, an electron beam 2 having a substantially circular orbit with a radius r centering on the center O of the synchrotron ring portion 1 is formed inside the synchroton ring portion 1 in a vacuum state.

  The magic mirror 3 is also called a quasi-elliptical mirror, and is formed as an assembly of ellipses whose cross-sectional shapes are minute (R. Lopez-Delgado and H. Szwarc, Opt. Commun. 19 (1976) 286, etc.) Since it is publicly known, detailed description is omitted). The specific shape of the reflection surface of the magic mirror 3 can be appropriately designed according to the optical path (for example, light collection, parallelism, etc.) of the light after being reflected by a predetermined region of the reflection surface. In an extreme case, the magic mirror coincides with an elliptical mirror or a parabolic mirror. In FIG. 1, the magic mirror 3 is formed with a reflective surface shape so that the reflected EUV light L is output from the output port 4 and collected at the focal point F. Placed in position. The magic mirror 3 may be flat in a direction perpendicular to the electron circulation surface (direction perpendicular to the paper surface in FIG. 1). However, in order to suppress the divergence of the EUV light L, the magic mirror 3 is elliptical or parabolic in the vertical direction. It is desirable that Further, the surface of the magic mirror 3 is formed of a multilayer film. For example, 40 to 50 layers of Mo and Si are alternately laminated with a thickness of 6 to 7 nm so as to reflect EUV light having a wavelength of 13.5 nm. Yes.

FIG. 2 is an enlarged partial plan view showing the vicinity of the target T in FIG. Hereinafter, the target T will be described in detail with reference to FIG. In FIG. 2, to distinguish each of the four targets T by symbol T ₁ through T _4, showing distinguished EUV light L emitted from each of the target T ₁ through T ₄ by the reference numeral L ₁ ~L _4.

  The target T is formed in a thin film shape having a predetermined thickness (thickness in the electron traveling direction) t so that EUV light (wavelength of about 13.5 nm) is generated by the transition radiation. For example, when an electron beam of about 20 MeV is used, each target T is preferably formed to a thickness of t = 0.1 to 0.2 (μm). Further, the width w of the target T is, for example, 10 nm to 100 μm, and preferably 10 μm or less. The material and structure of the thin film may be a single layer made of a substance that easily generates EUV light, or a multilayer made of a substance that easily generates EUV light and a substance that does not easily generate EUV light. A substance that easily generates EUV light means a substance having a relatively high plasma frequency, such as C, Be, Mg, Al, Si, Ca, Zn, Ga, Sn, Pt, and Pb. The substance that hardly generates EUV light means a substance having a relatively low plasma frequency, such as vacuum, K, Cu, Ge, Rb, Ag, In, Cs, Ba, Au, and the like. In this specification, vacuum is described as a substance for convenience. When a vacuum is adopted as a substance that does not easily generate EUV light, a plurality of substances that are likely to generate EUV light are arranged at predetermined intervals to form a multilayer structure.

The targets T _{1 to} T ₄ are arranged on the electron orbit 2 at a predetermined interval d, and the EUV light L _i (i = 1 to 3) emitted from each target T _i (i = 1 to 3). ) Does not hit the adjacent target T _{i + 1} (i = 1 to 3). That is, the interval d and the width w of the target are determined to be appropriate values according to the number N of targets to be arranged and the radius r of the electron orbit 2 so that the EUV light is not blocked by the adjacent target. is required. At this time, since the EUV lights L _{1 to} L ₄ are emitted from the targets T _{1 to} T _{4 in} the substantially tangential direction of the electron beam 2, the directions of the EUV lights L _{1 to} L ₄ are different. Accordingly, in consideration of the size of the magic mirror 3 so that all EUV lights L _{1 to} L ₄ are incident on the magic mirror 3, the range on the electron orbit 2 where the targets T _{1 to} T ₄ are arranged is It must be determined appropriately. For example, when a target having a width w = 0.1 (mm) = 100 (μm) is arranged on a circular orbit having a radius r = 150 (mm), the distance d may be set to 8.17 (mm).

1 and 2, four targets T _{1 to} T ₄ are arranged on the electron orbit 2. However, the present invention is not limited to this, and the number of targets T corresponding to the desired intensity of EUV light is not limited thereto. Can be arranged. For example, when EUV light having an intensity of about 1 W can be generated with one target, about 100 W of EUV light required for exposure in a semiconductor process can be obtained by arranging about 100 targets on the electron trajectory 2. Good.

  As described above, the EUV light generation apparatus according to the present embodiment arranges a predetermined number of targets according to the desired intensity on the electron orbit, reflects the EUV light generated from the targets by the magic mirror, It can be output as condensed light or parallel light.

  Although the case where the targets are arranged at equal intervals has been described above, the targets may not be arranged at equal intervals as long as the EUV light is not blocked by the adjacent targets.

  Moreover, although the case where a target is arrange | positioned so that the surface of a target may become substantially perpendicular | vertical with respect to the incident direction of an electron was demonstrated, it is not limited to this. For example, as shown in FIG. 3, the target T ′ may be arranged so that the surface of the target is inclined with respect to the incident direction of electrons. By arranging the target T ′ so as to be inclined as described above, even if the target has a relatively large width w, it becomes easy to arrange it close to each other so that EUV light does not hit the target.

  Moreover, although the case where each target is arrange | positioned so that EUV light radiated | emitted from an adjacent target may not be shielded as desirable arrangement | positioning of a some target was demonstrated, it is not limited to this. Some targets may be arranged to block a part of the EUV light emitted from adjacent targets. In that case, the utilization efficiency of the generated EUV light is reduced, but it is possible to generate EUV light that is stronger than before. In addition, since the target irradiated with EUV light generates heat, it is desirable to use a substance having a high melting point or provide a cooling means for the target.

  Moreover, although FIG. 2 shows the case where the target is a thin film, the target may be formed in a thin wire shape. For example, the wire-like target may be formed to have a thickness of 10 nm to 10 μm, preferably 0.2 μm or less, using a material that easily generates a single EUV light.

  Further, although the case where one magic mirror is used has been described, a plurality of magic mirrors may be provided. When a plurality of magic mirrors are provided, the surface shape of each magic mirror may be formed and each magic mirror may be arranged so that the reflected light of each magic mirror is collected at the same focal point.

  In addition, the reflected light from the magic mirror is not limited to condensing at the focal point F, and the shape of the reflective surface of the magic mirror may be appropriately formed to output the reflected EUV light as parallel light.

(EUV exposure equipment)
An EUV exposure apparatus used in a semiconductor process using the EUV light generation apparatus described above as an EUV light source will be described.

The EUV light generated by the EUV light generation apparatus according to the present invention has an emission angle of 10 to 15 mrad from one target and a very low emittance. For example, when the width of the target (the length in the direction perpendicular to the paper surface in FIGS. 1 to 3) is 100 μm, the emittance from all targets is 7 × 10 ⁻⁴ mm ² rad ² , and the emittance of a normal plasma light source It is much smaller than (3.5 mm ² rad ² ). FIG. 4 is a cross-sectional view perpendicular to the optical path of EUV light reflected by a magic mirror and output as parallel light having a width of about 100 mm and a thickness of 3 mm. As described above, since the EUV light output from the EUV light generation apparatus of the present invention has a low emittance, the spread of the electrons in the direction perpendicular to the orbital plane is very small. Therefore, using this characteristic, the optical system of the EUV exposure apparatus can be made simpler than the conventional one.

  Each of FIGS. 5 to 8 is a diagram showing a schematic configuration of an EUV exposure apparatus according to an embodiment of the present invention. In any EUV exposure apparatus, the EUV light generation apparatus according to the present invention described above is used as the EUV light source. 5-8, (a) is a perspective view of the EUV exposure apparatus, and (b) is a cross-sectional view showing the optical path of EUV light (the synchrotron is omitted). FIG. 5C is a partial perspective view showing the vicinity of the target T in an enlarged manner. 5-7, the wafer W is arrange | positioned in parallel with the electron orbit in a synchrotron, and the wafer W is arrange | positioned perpendicularly to the electron orbit in a synchrotron in FIG.

In the EUV exposure apparatus shown in FIG. 5, the parallel EUV light L reflected by the magic mirror 3 is reflected in the order of the first mirror M ₁ , the reticle (reflection type) R, and the second mirror M ₂ , and the wafer W Irradiate the surface. Here, a photosensitive film (not shown) is applied to the surface of the wafer W (the same applies to FIGS. 6 to 8). The first mirror M ₁ is a plane mirror, a second mirror M ₂ is a concave mirror having a predetermined curvature in the width direction of the parallel light EUV light L. Thus, EUV light, since the reflected the width is narrowed so that condensed by the second mirror M _2, the pattern of reticle R is reduced and projected on the photoresist on the wafer W. This optical system is provided with two mirrors, and the number of mirrors is very small as compared with a conventional EUV exposure apparatus, so that reduction in intensity due to reflection of EUV light can be suppressed.

For example, when the width of EUV light that is parallel light output from an EUV light source (EUV light generator) is 100 mm and the width of EUV light on the photosensitive film of the wafer W is 25 mm, the reduction ratio is 1/4. the second curvature of the mirror M ₂ may be designed to be. If gave a curvature in a second mirror M ₂ so as to reduce the parallel light only in the width direction, since it is not reduced in the thickness direction of the parallel light, to shrink in the thickness direction of the collimated light, magic mirror 3 and in the second at least one of the mirror M _2, it is sufficient to have a curvature in a thickness direction of the parallel light. As a result, for example, EUV light can be irradiated onto an area having a width of 25 mm × 1 mm on the photosensitive film of the wafer W. The region where the EUV light is irradiated on the photosensitive film of the wafer W is not limited to this. In order to irradiate a substantially rectangular desired area on the photosensitive film of the wafer W with EUV light having a predetermined width and thickness output from the EUV light source, the magic mirror 3 and the second mirror M ₂ What is necessary is just to design a curvature appropriately.

The EUV exposure apparatus shown in FIG. 6 employs an optical system having a simpler configuration than that shown in FIG. That is, the parallel EUV light L reflected by the magic mirror 3 is reflected in the order of the reticle R and the third mirror M ₃ , and is applied to the photosensitive film on the wafer W. The third mirror M ₃ is a concave mirror having a predetermined curvature in the width direction of the EUV light L, like the second mirror M ₂ in FIG. Thus, the pattern of reticle R is reduced and projected on the photosensitive film on the wafer W by the third mirror M _3. This optical system includes a single mirror, and can further suppress a reduction in intensity due to reflection of EUV light as compared with the optical system shown in FIG.

As with the optical system of FIG. 5, EUV light having a predetermined width and thickness of a cross-sectional shape output from the EUV light source is applied to the optical system of FIG. to irradiate the may be appropriately designing the curvature of the magic mirror 3 and the third mirror M _3.

The EUV exposure apparatus shown in FIG. 7 employs an optical system different from that shown in FIGS. That is, the parallel EUV light L reflected by the magic mirror 3 is reflected in the order of the fourth mirror M ₄ , reticle R, fifth mirror M ₅ , and sixth mirror M ₆ , and irradiates the photosensitive film on the wafer W. Is done. The fourth and fifth mirrors M ₄ and M ₅ are plane mirrors, and the sixth mirror M ₆ is a concave mirror having a predetermined curvature in the width direction of the EUV light L. Thus, the pattern of reticle R is reduced and projected on the photosensitive film on the wafer W by the sixth mirror M _6. This optical system is provided with three mirrors, and the number of mirrors is very small as compared with a conventional EUV exposure apparatus, so that a reduction in intensity due to reflection of EUV light can be suppressed. In the optical system of FIG. 7, the number of mirrors is larger than in FIGS. 5 and 6, but there is an advantage that the mechanism design for scanning the EUV light on the photosensitive film on the wafer W becomes easy.

Regarding the optical system of FIG. 7 as well, the EUV light having a predetermined width and thickness cross-sectional shape output from the EUV light source is substantially rectangular on the photosensitive film of the wafer W, as in the optical systems of FIGS. to the illumination in the desired area, the magic mirror 3 may be suitably designing the curvature of the sixth mirror M _6. In the above, the fifth mirror M ₅ was a plane mirror may be used to reduce the EUV light with a concave mirror to the fifth mirror M _5. For example, to reduce the width of the EUV light in the fifth mirror _{M 5,} it may be reduced the thickness of the EUV light in the sixth mirror _{M 6.}

In the EUV exposure apparatus shown in FIG. 8, the EUV light generator is arranged so that the wafer is horizontally arranged and the electron orbit plane is vertical, that is, the wafer is arranged perpendicular to the electron orbit plane. . As a result, the optical system can be simplified as in FIG. That is, the parallel EUV light L reflected by the magic mirror 3 is reflected in the order of the reticle R and the seventh mirror M ₇ and is irradiated onto the photosensitive film on the wafer W. Seventh mirror M ₇ is a concave mirror having a predetermined curvature in the width direction of the EUV light L. Thus, the pattern of reticle R is reduced and projected by the seventh mirror M ₇ on the photosensitive film on the wafer W. This optical system includes a single mirror, and can reduce the reduction in EUV light intensity as in FIG.

8, EUV light having a cross-sectional shape with a predetermined width and thickness output from the EUV light source is substantially rectangular on the photosensitive film of the wafer W, as in the optical systems of FIGS. to irradiate the desired region may be appropriately designing the curvature of the magic mirror 3 and the seventh mirror M _7.

The surfaces of the _first to seventh mirrors M _{1 to} M ₇ are formed of a multilayer film like the magic mirror 3 so as to reflect EUV light efficiently.

  The four types of optical systems in the above EUV exposure apparatus are merely examples, and the present invention is not limited to these. Depending on the reduction ratio of the reticle pattern projected onto the photosensitive film on the wafer and the mechanism for scanning the EUV light on the wafer, the number of mirrors may be increased as appropriate, and the arrangement and curvature of the plane mirror and concave mirror may be changed. Can do.

  Further, the arrangement of the wafer and the EUV light generation apparatus is not limited to the arrangement shown in FIGS. For example, when the wafer W is horizontally arranged in FIG. 8, the arrangement of the EUV light generation apparatus may be changed accordingly.

In the above, the case where the optical system suitable for the characteristics of the EUV light output from the EUV light generation apparatus according to the present invention has been described, but the optical system of a conventional EUV exposure apparatus can also be used. In this case, as shown in FIG. 1, the EUV light output from the EUV light generation apparatus is condensed at the focal point F. Then, the condensed light is converted into parallel light by a spheroid mirror or the like, and is incident on an optical system of a conventional EUV exposure apparatus, for example, an illumination optical system and a projection optical system shown in FIG. FIG. 9 is a cross-sectional view showing an example of an optical system of a conventional EUV exposure apparatus (see Patent Document 1). IR _{1 to} IR ₄ are reflecting mirrors constituting the illumination optical system, and PR _{1 to} PR ₄ are reflecting mirrors constituting the projection optical system. W is a wafer to be exposed, and R is a reticle (reflection type). The EUV light output from the EUV light generation apparatus according to the present invention and collected at the focal point F is reflected as parallel light by the reflecting mirror D, and enters the first reflecting mirror IR ₁ constituting the illumination optical system. Thereafter, the light is sequentially reflected by the reflecting mirrors IR _{1 to} IR ₄ to illuminate a predetermined area of the mask M. The EUV light reflected by the pattern formed on the mask M is sequentially reflected by the reflecting mirrors PR _{1 to} PR ₄ of the projection optical system, and a reduced image corresponding to the mask pattern is formed on the photosensitive film on the wafer W. To do.

The optical system is not limited to the optical system shown in FIG. 9, and various optical systems can be used. For example, the optical system shown in FIG. 10 may be used as the projection optical system. In FIG. 10, the projection optical system is configured by _six aspherical mirrors PM _{1 to} PM ₆ .

  Also, an EUV light generation apparatus including a magic mirror having a surface shape so that reflected light becomes parallel light can be used. In that case, since the EUV light generated by the EUV light generation apparatus and incident on the optical system is parallel light, a spheroid mirror (for example, in FIG. 9) for converting the light collected as described above into parallel light. The reflector D) is not necessary.

  As mentioned above, although this invention was demonstrated using embodiment, this invention is not limited to above-described embodiment, It can add and implement various changes, These are also contained in the technical scope of this invention. It is.

  According to the present invention, it is possible to provide an EUV light generation apparatus and an EUV exposure apparatus that can output EUV light with sufficient intensity and small emittance for use in a semiconductor process.

Claims (9)

Synchrotron,
A plurality of thin-film or wire-like targets that are arranged on the orbit of electrons inside the synchrotron and that generate EUV light when the electrons are incident;
A magic mirror that reflects the incident EUV light in a predetermined direction;
An output port for extracting EUV light reflected by the magic mirror to the outside of the synchrotron,
An EUV light generation apparatus, wherein the EUV light reflected by the magic mirror is condensed light or parallel light.   2. The EUV light generation apparatus according to claim 1, wherein each of the plurality of targets is arranged so as not to block EUV light generated from the other targets. The target is
A thin film having a width of 10 nm to 100 μm,
The single layer made of a substance that easily generates EUV light, or a multilayer that consists of a substance that easily generates EUV light and a substance that hardly generates EUV light. EUV light generator. The target is
A wire having a thickness of 10 nm to 10 μm,
The EUV light generation apparatus according to claim 1, wherein the EUV light generation apparatus is formed of a material that easily generates a single EUV light. The substance that easily generates EUV light is a substance selected from the group consisting of C, Be, Mg, Al, Si, Ca, Zn, Ga, Sn, Pt, and Pb,
The said substance which does not generate | occur | produce EUV light is a substance selected from the group which consists of a vacuum or K, Cu, Ge, Rb, Ag, In, Cs, Ba, and Au. The EUV light generator according to 3 or 4. An EUV light source;
An EUV exposure apparatus comprising: an optical system that irradiates a reticle with EUV light from the EUV light source and exposes and transfers a pattern formed on the reticle onto a photosensitive film on a wafer;
An EUV exposure apparatus, wherein the EUV light source is the EUV light generation apparatus according to claim 1. The optical system is
A first mirror that reflects EUV light output as parallel light from the EUV light generation apparatus and makes it incident on the reticle;
The EUV exposure apparatus according to claim 6, further comprising: a second mirror that irradiates the photosensitive film with EUV light reflected by the reticle in a width direction of parallel light. EUV light output as parallel light from the EUV light generator enters the reticle,
The EUV exposure apparatus according to claim 6, wherein the optical system includes a mirror that irradiates the photosensitive film with EUV light reflected by the reticle in a width direction of parallel light. The optical system is
A first mirror that reflects EUV light output as parallel light from the EUV light generation apparatus and enters the reticle;
A second mirror that reflects EUV light reflected by the reticle;
The EUV exposure apparatus according to claim 6, further comprising a third mirror that irradiates the photosensitive film with EUV light reflected by the second mirror in a width direction of parallel light.

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