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JP4963336B2 - Heat treatment equipment - Google Patents

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Publication number
JP4963336B2
JP4963336B2 JP2001257187A JP2001257187A JP4963336B2 JP 4963336 B2 JP4963336 B2 JP 4963336B2 JP 2001257187 A JP2001257187 A JP 2001257187A JP 2001257187 A JP2001257187 A JP 2001257187A JP 4963336 B2 JP4963336 B2 JP 4963336B2
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Japan
Prior art keywords
gas
exhaust
heat treatment
pipe
exhaust port
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JP2001257187A
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Japanese (ja)
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JP2003068657A (en
Inventor
幸正 齋藤
孝規 齋藤
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Tokyo Electron Ltd
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Tokyo Electron Ltd
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Description

【0001】
【発明の属する技術分野】
本発明は、熱処理装置に関する。
【0002】
【従来の技術】
半導体装置の製造においては、被処理体例えば半導体ウエハに酸化、拡散、CVD、アニール等の熱処理を施すための各種の熱処理装置が用いられている。この熱処理装置は、排気口を有する処理容器内に半導体ウエハを収容して所定の処理ガス雰囲気下で所定の熱処理例えばCVD処理を施すようになっている。
【0003】
特に、減圧下での処理が可能で、前記排気口が石英製である場合、前記排気口の端面には気密材としてのOリングを介して排気管が接続される。具体的には、排気口および排気管の接続端にはフランジ部がそれぞれ設けられており、これらフランジ部間にOリングが介設される。また、この場合、Oリングの熱的劣化を抑制するために、Oリングの近傍例えば排気管のフランジ部には冷却部例えば冷却水通路を設ける必要がある。
【0004】
【発明が解決しようとする課題】
しかしながら、前記熱処理装置においては、排気口および排気管の接続部(フランジ部)から外部への放熱が多く、排気口の端面付近の温度が下がっているため、排気口の端面付近に排気中の処理ガス成分が接触すると、凝結により副生成物となって付着し易い。排気口の端面付近が冷却水通路によって積極的に冷却されている場合には、更に副生成物が付着し易くなる。排気口の端面付近に副生成物が付着し、この副生成物がパーティクルとなって処理容器内に逆流すると、半導体ウエハが汚染される恐れがある。
【0005】
本発明は、前記事情を考慮してなされたもので、処理容器の排気口の端面付近における副生成物の付着を抑制して被処理体のパーティクル汚染を防止することができる熱処理装置を提供することを目的とする。
【0006】
【課題を解決するための手段】
本発明は、処理容器内に被処理体を収容して所定の熱処理を施す処理容器の排気口の端面に第1の気密材を介して排気管を接続し、前記第1の気密材の近傍にその熱的劣化を抑制するための冷却水通路を設け、前記排気口の端面付近における副生成物の付着を抑制すべくその外周側の気体通路からの気体を内周面から吹出す複数の気体吹出し部を有する内管を排気管内から排気口内の所定範囲に設けた熱処理装置において、前記内管の排気口側先端部の位置から排気管側に延出されて排気口と排気管の接続部の周辺の内周に接して該内周を被覆する筒状延出部を設け、該筒状延出部の先端部の内周に排気ガスを前記内管内に円滑に導入するための先端に向って漸次拡径したテーパー部を設けると共に該テーパー部の後端から前記内管の先端部の内側に延出して内管との間で前記気体通路からの気体を吹出させるための隙間を形成する延出部を設け、前記筒状延出部の下流側先端部外周と前記排気管の内周との間に第2の気密材を前記冷却水通路に接近させて介設したことを特徴とする。
【0008】
記気体が副生成物の付着を抑制する温度に加温された不活性ガスであることが好ましい
【0009】
記気体がクリーニングガスであることが好ましい
【0012】
記処理容器が縦型の単管構造からなり、その頂部に前記排気口を備えていることが好ましい
【0014】
【発明の実施の形態】
以下に、本発明の実施の形態を添付図面に基いて詳述する。図1は本発明の実施の形態である熱処理装置の構成を示す図、図2は同熱処理装置の要部を示す拡大断面図、図3は内管の構成を示す図で、(a)は先端部材の断面図、(b)は中間部材の断面図、(c)は後端部材の断面図である。
【0015】
図1において、1は縦型の熱処理装置で、この熱処理装置1は多数枚の被処理体例えば半導体ウエハwを下方から収容して所定の熱処理例えばCVD処理を施す処理容器(プロセスチューブ)2を備えている。この処理容器2は、縦型の単管構造とされ、耐熱性および耐食性を有する材料例えば石英ガラスにより形成されている。
【0016】
前記処理容器2の下端部は炉口として開口し、その炉口(開口)3の外周にはフランジ部(開口フランジ部)4が形成されている。処理容器2の下側部、図示例ではフランジ部4には処理ガスや処理容器内パージ用の不活性ガス例えば窒素(N)ガスを導入するガス導入管5が気密に貫通して設けられており、ガス導入管5には処理ガスや不活性ガスを所定の流量で供給する図示しないガス供給系の配管(ガス供給管)が接続されている。処理容器2の上端部(頂部)は縮径し、その中央部には上方に立上がり、一側方に向って開口した逆L形状の排気口(排気ポート)6が形成されており、この排気口6には後述する排気系の配管(排気管)7が接続されている。
【0017】
前記処理容器2の周囲には処理容器2内のウエハwを所定の熱処理温度に加熱昇温するためのヒータ8が設けられている。このヒータ8は、処理容器2の周囲および上方を取囲む水冷ジャケット9を有し、この水冷ジャケット9の内周に抵抗発熱体10を配設して構成されている。水冷ジャケット9には、処理容器2の上部を加熱する抵抗発熱体(上部加熱部)11および排気口6の周囲を加熱する抵抗発熱体(排気口加熱部)12が設けられている。
【0018】
前記ヒータ8は環状の底面板13を有し、この底面板13を介してベースプレート14上に設置されている。処理容器2の開口フランジ部4の下面には、環状の支持体15がフランジ押え16を介して取付けられ、この支持体15が前記ヒータ8の底面板13に取付部材17を介して取付けられている。
【0019】
前記処理容器2内に多数枚例えば25〜150枚程度の半導体ウエハwを高さ方向に所定間隔で搭載保持するために、ウエハwは保持具である例えば石英ガラス製のボート18に保持されている。処理容器2の下方には処理容器2の炉口(開口)3を密閉する例えばSUS製の蓋体19が設けられている。
【0020】
前記蓋体19上には処理容器2の炉口3からの放熱を抑制する断熱手段(炉口断熱手段)として、図示例ではサーモプラグ20が設けられている。このサーモプラグ20は、蓋体19上に立設される複数本の脚柱21と、これら脚柱21の上端部に略水平に設けられた抵抗発熱体からなる下部加熱部22とから主に構成されている。また、蓋体19上には前記ボート18をサーモプラグ20よりも上方位置に載置するための載置台23が設けられている。この載置台23は蓋体19の中央部からサーモプラグ20の中央を緩く貫通して立上がった支柱24を有している。蓋体19の下部には支柱24を介して載置台23を水平回転させるための回転機構25が設けられている。
【0021】
前記処理容器2の下方には、蓋体19を昇降させて蓋体19の開閉および処理容器2内に対するボート18の搬入(ロード)、搬出(アンロード)を行うための昇降機構26が設けられていると共にその作業領域であるローディングエリア27が設けられている。前記蓋体19の上面には腐食性ガスの接触による腐食を防止するために例えば石英ガラス製のカバー材28で被覆されていることが好ましい。
【0022】
一方、前記排気管7は、前記処理容器2の排気口6の端面6aに気密材であるOリング29を介して接続された水平管30と、この水平管30にエルボ31を介して下向きに接続された垂直管32とを備えており、この垂直管32の下端部には排気中から処理ガス成分の副生成物を捕捉するための排気トラップ33が設けられている。この排気トラップ33が低位置にあるため、そのエレメント交換等のメンテナンスを容易に行うことができる。処理容器2が単管上引き排気構造で、排気口6が高所にあるため、後述する排気口6の副生成物対策により副生成物を先送りして低所の排気トラップ33で捕捉するようにしており、これにより排気口6のメンテナンスと排気トラップ33のメンテナンスを軽減でき、メンテナンス性の向上が図れる。
【0023】
前記排気管7の前記排気トラップ33よりも下流には、開閉および流量調整が可能な圧力可変弁34および減圧ポンプ35等が設けられ、処理容器2内を所定の減圧処理圧力に圧力制御可能に構成されている。前記排気管7は、例えばSUS製の配管、好ましくは内面をフッ素系の樹脂コート材でコーティングした配管からなっている。
【0024】
前記排気口6および排気管7の接続端には、図2にも示すように、フランジ部36,37が設けられ、これらフランジ部36,37の対向面間に第1の気密材であるOリング29が介設され、このOリング29の近傍にはその熱的劣化を抑制するための冷却部である冷却水通路39が設けられている。図示例では、排気管7のフランジ部37側にOリング29が設けられていると共にこのOリング29に接近させて冷却水通路39が設けられている。なお、フランジ部36,37同士は、図示しないクランプ機構により締結されている。
【0025】
前記熱処理装置1においては、処理容器2の頂部に排気口6が設けられ、その排気口6の端面6a付近がOリング29を冷却する冷却水通路39により冷却されているため、排気中の処理ガス成分が接触して副生成物の付着を生じ易いだけでなく、その副生成物がパーティクルとなって排気口6から処理容器2内のウエハw上に落下し、ウエハwを汚染する恐れがある。そこで、処理容器2の排気口6の端面6a付近における副生成物の付着を抑制してウエハwのパーティクル汚染を防止するために、内周面から気体を吹出す複数の気体吹出し部40を有する内管41が排気管6内、図示例では水平管30内から排気口6内の所定範囲に設けられている。
【0026】
前記内管41と排気配管(排気口6および水平管30)の内周との間には環状の気体通路42が形成され、水平管30には気体通路42に気体例えば不活性ガス好ましくは窒素(N)ガスを供給する気体供給口(気体供給ポート)43が設けられている。この気体供給口43には、流量調整機構を介して気体供給源が接続されている(図示省略)。
【0027】
前記気体通路42の両端からガスが漏出するのを防止するために、内管41の排気口側先端部(先端部材)および排気管側後端部(後端部材)には排気配管の内周との間をシールする第2,第3気密材であるOリング44,45が配設されている。これらOリング44,45および前記Oリング29は、耐熱性を有する材料例えばフッ素系樹脂により形成されていることが好ましい。処理容器2内から排気口6を介して排気管7内に流れる排気ガスは処理容器2内では高温であるが、排気通路を流れ方向に進むにしたがって自然放熱により降温するため、下流側のOリング45は熱的劣化を起こしにくいが、上流側のOリング44は熱的劣化を起こし易い。そこで、排気口側先端部のOリング44の熱的劣化を防止するために内管41の排気口側先端部にはその外周から排気管側(水平管側)に延出された筒状延出部46が設けられ、この筒状延出部46と排気管7の内周との間には前記冷却水通路39に接近させてOリング44が介設されている。
【0028】
前記内管41は、具体的には図3にも示すように、排気ガスの流れ方向上流に配置される環状の先端部材41aと、下流に配置される環状の後端部材41cと、これら先端部材41aと後端部材41cの間に介在される環状の複数の中間部材41bとから構成されている。中間部材41bの先端側内周には雌ねじ部47が設けられ、中間部材41bの後端側外周には前記雌ねじ部47と螺合し得るねじピッチの雄ねじ部48が設けられている。また、中間部材41bには前記雌ねじ部47と隣接して下流側に複数の通気口49が周方向に設けられている。
【0029】
中間部材41bの内周面は上流側(雌ねじ部および通気口の位置)が略水平の平坦面50になっているが、下流側がなだらかに漸次縮径したテーパー面51になっている。また、中間部材41bには前記雄ねじ部47と隣接して下流側に先端側の内周平坦面50よりも小径の外周面(段部)52が形成されている。このような構成により、一方の中間部材41bの雌ねじ部47に他方の中間部材41cの雄ねじ部48を螺合することで複数の中間部材41bを長手方向に連結することができると共に、環状の気体通路42から通気口49に入った気体が一方の先端側内周平坦面50と他方の後端側外周面52との間の隙間(気体吹出し部)40から内管41の内周面に沿って下流側へ吹出されるようになっている。
【0030】
前記後端部材41cには、先端側内周に前記中間部材41bの雄ねじ部48に螺合する雌ねじ部53が設けられていると共に、この雌ねじ部53と隣接して下流側に複数の通気口54が周方向に設けられている。また、後端部材41cの後端側外周にはフランジ部55が形成され、このフランジ部55と水平管30の内周との間にこれらの間の隙間をシールする前記Oリング45が介設されている。
【0031】
前記先端部材41aには、中間部材41bの先端部が係合する環状の係合溝56が設けられていると共に、外周から下流側へ延出した前記筒状延出部46が設けられている。係合溝56には中間部材41bの雌ねじ部47が螺合する雄ねじ部が形成されていても良い。筒状延出部46は隣接する1個または数個の中間部材41bの外周を覆っており、その中間部材41bの外周と筒状延出部46の内周との間には前記環状の気体通路42と連通する環状の気体通路57が形成されている。また、先端部材41aの内周には、前記気体通路57から中間部材41bの通気口49に入った気体を中間部材41bの内周面に沿って下流側へ吹出させるための隙間(気体吹出し部)40を中間部材の内周平坦面50との間に形成する延出部58が形成されている。
【0032】
先端部材41aの外周および筒状延出部46の外周は排気口6の内周および水平管30の入口側内周に接している。また、先端部材41aの内周には、排気口6からの排気ガスを円滑に内管41内に導入するために先端に向って漸次拡径したテーパー部59が形成されている。なお、図示例では、筒状延出片部46の下流側先端部外周と水平管30の内周との間にOリング44を介設するために、水平管30の内周にはその入口側内周よりも拡径した段部60が設けられているが、Oリング44を水平管30の内周に埋め込むようにすれば前記段部60は必ずしも設ける必要はない。
【0033】
前記排気口6の端面6a付近の排気配管、すなわち排気口6の外周および水平管30の外周には副生成物の付着を抑制する温度例えば250℃程度に加熱する加熱部例えばパイプヒータ61,62が設けられていることが好ましい。また、排気口6および水平管30のフランジ部36,37の対向面とは反対側の面(背面)には、同様の加熱部例えばフランジヒータ63,64が設けられていることが好ましい。更に、前記気体が副生成物の付着を抑制する温度に加温された不活性ガス例えば窒素ガスであることが好ましい。
【0034】
次に、以上の構成からなる熱処理装置の作用および熱処理方法を述べる。ローディングエリア27において図示しないカセットからボート18へのウエハwの移載が終了すると、昇降機構26による蓋体19の上昇によってボート18を処理容器2内に下部の炉口3からロードし、炉口3を蓋体19で気密に閉塞する。
【0035】
そして、処理容器2内を、排気口6に接続された排気管7による減圧排気により所定の圧力ないし真空度に制御すると共にヒータ8により所定の処理温度に制御し、この状態で処理容器2内にガス導入管5により処理ガスを導入してウエハwに所定の熱処理例えばCVD処理を開始する。そして、熱処理が終了したなら、処理ガスの導入を停止し、不活性ガスの導入により処理容器2内をパージしてから、蓋体19を降下させて処理容器2内を開放すると共にボート18をローディングエリア27にアンロードすればよい。
【0036】
前記熱処理装置1によれば、処理容器2が単管構造であり、二重管構造のものよりも熱容量が小さいため、急速昇降温が可能なヒータ8の特性を十分に活かすことができ、処理能力の向上が図れる。また、処理容器2の下側部に設けたガス導入管5から処理容器2内に処理ガスを導入し、この処理ガスを処理容器2の頂部に設けた排気口6から排気するようしたので、処理容器2内の下方から上方へ片流れないし偏った流れのない真っ直ぐな均一のガス流(上昇流)を形成することができ、ウエハwの面内均一な処理が可能となり、歩留りの向上および処理能力の向上が図れる。
【0037】
特に、前記排気口6の端面6aにOリング29を介して排気管7を接続すると共に該Oリング29の近傍に冷却部39を設け、前記排気口6の端面6a付近における副生成物の付着を抑制すべく内周面から気体を吹出す複数の気体吹出し部40を有する内管41を排気管7内から排気口6内の所定範囲に設けて、該内管41の内周面に沿って気体を流すことにより排気口6の端面6a付近における副生成物の付着を抑制するようにしているため、処理容器2の排気口6の端面6a付近における副生成物の付着を抑制してウエハwのパーティクル汚染を防止することができ、歩留りの向上および処理能力の向上が図れる。
【0038】
また、前記排気口6の端面6a付近の排気配管に副生成物の付着を抑制する温度に加熱する加熱部例えばパイプヒータ61,62を設ければ、排気口6の端面6a付近における副生成物の付着を更に抑制することができ、ウエハwのパーティクル汚染の問題を解消することができる。更に、前記気体として、副生成物の付着を抑制する温度に加温された不活性ガスを用いれば、処理容器2の排気口6の端面6a付近における副生成物の付着を更に抑制することができ、ウエハwのパーティクル汚染の問題を解消することができる。
【0039】
4は本発明の実施の形態ではない内管の参考例を示す断面図である。この図において、前記実施の形態と同一部分は同一参照符号を付して説明を省略し、異なる部分について説明を加える。図4の参考例においては、内管先端部の筒状延出部46と水平管30の内周との間にはOリングが設けられておらず、その代わりに、筒状延出部46には水平管30内の段部60に突き当たって係合するフランジ部65が設けられている。これによれば、Oリングを不要にすることができ得る。
【0040】
図5の本発明の実施の形態ではない参考例においては、内管41の先端部には筒状延出部およびOリングが設けられていない。内管41の先端部(先端部材)の外周は排気口6の内周に接しているが、これら内管41の先端部の外周と排気口6の内周との間の微小な隙間(先端吹出し部)66から気体を吹出すことにより前記隙間66における副生成物の付着を抑制するように構成されている。すなわち、前記内管41の排気口側先端部には、排気口6の内周との間における副生成物の付着を抑制すべく気体を吹出す先端吹出し部66が設けられているため、内管41の先端部と排気口6の内周との間に浸入して付着する副生成物の付着を抑制することができる。
【0041】
以上、本発明の実施の形態を図面により詳述してきたが、本発明は前記実施の形態に限定されるものではなく、本発明の要旨を逸脱しない範囲での種々の設計変更等が可能である。例えば、前記実施の形態では本発明をバッチ処理式の縦型熱処理装置に適用した例が示されているが、請求項1に係る本発明はこれに限定されず、例えば横型熱処理装置や枚葉式の熱処理装置にも適用可能である。また、前記実施の形態では処理容器の頂部に排気口を設けて上引き排気構造とした例が示されているが、請求項1に係る本発明はこれに限定されず、例えば処理容器の下方に排気口を設けて下引き排気構造とししたものにも適用可能である。本発明における熱処理には、CVD以外に、例えば酸化、拡散、アニール等が含まれる。また、気密材としては、Oリング以外に、例えばメタルシール等であっても良い。
【0042】
また、内管に供給する気体としては、不活性ガスに限定されず、例えばクリーニングガスであっても良い。クリーニングガスとしては、例えばClF,NF,HCl,HF,F,Clが使用できる。これにより、処理容器の排気口の端面付近における副生成物の付着を更に抑制することができ、ウエハのパーティクル汚染問題を解消することができる。また、被処理体としては、半導体ウエハ以外に、例えばガラス基板やLCD基板等も適用可能である。
【0043】
【発明の効果】
以上要するに本発明によれば、次のような効果を奏することができる。
【0044】
本発明によれば、処理容器内に被処理体を収容して所定の熱処理を施す処理容器の排気口の端面に第1の気密材を介して排気管を接続し、前記第1の気密材の近傍にその熱的劣化を抑制する冷却水通路を設け、前記排気口の端面付近における副生成物の付着を抑制すべくその外周側の気体通路からの気体を内周面から吹出す複数の気体吹出し部を有する内管を排気管内から排気口内の所定範囲に設けた熱処理装置において、前記内管の排気口側先端部の位置から排気管側に延出されて排気口と排気管の接続部の周辺の内周に接して該内周を被覆する筒状延出部を設け、該筒状延出部の先端部の内周に排気ガスを前記内管部に円滑に導入するための先端部に向って漸次拡径したテーパー部を設けると共に該テーパー部の後端から前記内管の先端部の内側に延出して内管との間で前記気体通路からの気体を吹出させるための隙間を形成する延出部を設け、前記筒状延出部の下流側先端部外周と前記排気管の内周との間に第2の気密材を前記冷却水通路に接近させて介設したため、処理容器の排気口の端面付近における副生成物の付着を抑制して被処理体のパーティクル汚染を防止することができると共に、第1の気密材及び第2の気密材の熱的劣化を共通の冷却水通路で防止することができる
【図面の簡単な説明】
【図1】本発明の実施の形態である熱処理装置の構成を示す図である。
【図2】同熱処理装置の要部を示す拡大断面図である。
【図3】内管の構成を示す図で、(a)は先端部材の断面図、(b)は中間部材の断面図、(c)は後端部材の断面図である。
【図4】内管の変形例を示す断面図である。
【図5】内管の変形例を示す断面図である。
【符号の説明】
1 熱処理装置
w 半導体ウエハ(被処理体)
2 処理容器
6 排気口
7 排気管
29 Oリング(気密材)
39 冷却水通路(冷却部)
40 気体吹出し部
41 内管
44 Oリング(気密材)
46 筒状延出部
66 先端吹出し部
[0001]
BACKGROUND OF THE INVENTION
The present invention relates to a heat treatment equipment.
[0002]
[Prior art]
In the manufacture of semiconductor devices, various heat treatment apparatuses are used for performing heat treatments such as oxidation, diffusion, CVD, and annealing on an object to be processed such as a semiconductor wafer. This heat treatment apparatus accommodates a semiconductor wafer in a processing container having an exhaust port, and performs a predetermined heat treatment such as a CVD process in a predetermined processing gas atmosphere.
[0003]
In particular, when processing under reduced pressure is possible and the exhaust port is made of quartz, an exhaust pipe is connected to an end surface of the exhaust port via an O-ring as an airtight material. Specifically, flange portions are respectively provided at the connection ends of the exhaust port and the exhaust pipe, and an O-ring is interposed between the flange portions. In this case, in order to suppress thermal deterioration of the O-ring, it is necessary to provide a cooling portion, for example, a cooling water passage, in the vicinity of the O-ring, for example, the flange portion of the exhaust pipe.
[0004]
[Problems to be solved by the invention]
However, in the heat treatment apparatus, heat is released to the outside from the connection part (flange part) of the exhaust port and the exhaust pipe, and the temperature near the end surface of the exhaust port is lowered. When the processing gas component comes into contact, it tends to adhere as a by-product due to condensation. When the vicinity of the end face of the exhaust port is actively cooled by the cooling water passage, the by-product is more likely to adhere. When a by-product adheres to the vicinity of the end face of the exhaust port and the by-product becomes particles and flows back into the processing container, the semiconductor wafer may be contaminated.
[0005]
The present invention has been made in consideration of the above circumstances, provide a heat treatment equipment which can suppress the deposition of by-product in the vicinity of the end surface of the exhaust port of the processing chamber to prevent particle contamination of the object to be processed The purpose is to do.
[0006]
[Means for Solving the Problems]
Vicinity of the present invention is to accommodate the object to be processed into the processing chamber connected to the exhaust pipe via the first hermetic material to the end face of the exhaust port of the processing chamber for performing a predetermined heat treatment, the first hermetic material Provided with a cooling water passage for suppressing thermal degradation, and a plurality of gas blown out from the inner peripheral surface of the gas passage on the outer peripheral side in order to suppress adhesion of by-products near the end face of the exhaust port. in the heat treatment apparatus of the inner tube is provided in a predetermined range of the exhaust mouth from an exhaust pipe having a gas blowout unit, connected between the exhaust port exhaust pipe is extended on the exhaust pipe side from the position of the exhaust port side end portion of the inner tube Provided with a cylindrical extension part that contacts the inner periphery of the periphery of the part and covers the inner periphery, and a tip for smoothly introducing exhaust gas into the inner pipe at the inner periphery of the tip part of the cylindrical extension part A tapered portion that gradually increases in diameter toward the tip, and from the rear end of the tapered portion to the tip of the inner tube The extending portion to form a gap for blown gas from the gas passage between the inner tube is provided extending inwardly of the exhaust pipe and the downstream tip outer periphery of the tubular extension portion A second airtight member is interposed between the periphery and the cooling water passage .
[0008]
It is preferred before SL gas is an inert gas which is temperature warm suppress adhesion of by-products.
[0009]
It is preferred before SL gas is a cleaning gas.
[0012]
It pre Symbol processing vessel from a single tubular structure of the vertical, it is preferable to provide the air outlet on the top.
[0014]
DETAILED DESCRIPTION OF THE INVENTION
Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings. FIG. 1 is a diagram showing a configuration of a heat treatment apparatus according to an embodiment of the present invention, FIG. 2 is an enlarged cross-sectional view showing a main part of the heat treatment apparatus, FIG. 3 is a diagram showing a configuration of an inner tube, and FIG. Sectional drawing of a front-end | tip member, (b) is sectional drawing of an intermediate member, (c) is sectional drawing of a rear-end member.
[0015]
In FIG. 1, reference numeral 1 denotes a vertical heat treatment apparatus. The heat treatment apparatus 1 includes a processing container (process tube) 2 for accommodating a plurality of objects to be processed such as a semiconductor wafer w from below and performing a predetermined heat treatment such as a CVD process. I have. The processing container 2 has a vertical single tube structure and is formed of a material having heat resistance and corrosion resistance, for example, quartz glass.
[0016]
A lower end portion of the processing vessel 2 is opened as a furnace port, and a flange portion (opening flange portion) 4 is formed on the outer periphery of the furnace port (opening) 3. A gas introduction pipe 5 for introducing a processing gas and an inert gas for purging the inside of the processing container, for example, nitrogen (N 2 ) gas, is provided in an airtight manner in the lower portion of the processing container 2, in the illustrated example, the flange portion 4. The gas introduction pipe 5 is connected to a gas supply system pipe (gas supply pipe) (not shown) for supplying a processing gas and an inert gas at a predetermined flow rate. The upper end portion (top portion) of the processing vessel 2 is reduced in diameter, and an inverted L-shaped exhaust port (exhaust port) 6 is formed in the center portion, which rises upward and opens toward one side. An exhaust system pipe (exhaust pipe) 7 to be described later is connected to the port 6.
[0017]
A heater 8 for heating the wafer w in the processing container 2 to a predetermined heat treatment temperature is provided around the processing container 2. The heater 8 includes a water cooling jacket 9 that surrounds and surrounds the processing vessel 2, and a resistance heating element 10 is disposed on the inner periphery of the water cooling jacket 9. The water cooling jacket 9 is provided with a resistance heating element (upper heating part) 11 for heating the upper part of the processing vessel 2 and a resistance heating element (exhaust opening heating part) 12 for heating the periphery of the exhaust port 6.
[0018]
The heater 8 has an annular bottom plate 13 and is installed on the base plate 14 via the bottom plate 13. An annular support 15 is attached to the lower surface of the opening flange portion 4 of the processing container 2 via a flange retainer 16, and this support 15 is attached to the bottom plate 13 of the heater 8 via an attachment member 17. Yes.
[0019]
In order to mount and hold a large number of, for example, about 25 to 150 semiconductor wafers w in the processing container 2 at a predetermined interval in the height direction, the wafers w are held by a boat 18 made of, for example, quartz glass. Yes. A lid 19 made of, for example, SUS for sealing the furnace port (opening) 3 of the processing container 2 is provided below the processing container 2.
[0020]
A thermo plug 20 is provided on the lid 19 as a heat insulating means (furnace port heat insulating means) for suppressing heat radiation from the furnace port 3 of the processing vessel 2 in the illustrated example. The thermo plug 20 is mainly composed of a plurality of leg columns 21 standing on the lid body 19 and a lower heating unit 22 made of a resistance heating element provided substantially horizontally at the upper end of the leg columns 21. It is configured. A mounting table 23 for mounting the boat 18 at a position higher than the thermo plug 20 is provided on the lid 19. The mounting table 23 has a column 24 that rises loosely from the center of the lid 19 through the center of the thermoplug 20. A rotating mechanism 25 for horizontally rotating the mounting table 23 via a support column 24 is provided at the lower part of the lid body 19.
[0021]
Below the processing container 2, an elevating mechanism 26 is provided for raising and lowering the lid body 19 to open and close the lid body 19 and to load (unload) the boat 18 into and out of the processing container 2. In addition, a loading area 27 as a work area is provided. The upper surface of the lid 19 is preferably covered with a cover material 28 made of, for example, quartz glass in order to prevent corrosion due to contact with corrosive gas.
[0022]
On the other hand, the exhaust pipe 7 includes a horizontal pipe 30 connected to an end surface 6a of the exhaust port 6 of the processing container 2 via an O-ring 29 which is an airtight material, and the horizontal pipe 30 downwardly via an elbow 31. An exhaust trap 33 is provided at the lower end portion of the vertical pipe 32 for capturing a by-product of the processing gas component from the exhaust gas. Since the exhaust trap 33 is in a low position, maintenance such as element replacement can be easily performed. Since the processing vessel 2 has a single-pipe top exhaust structure and the exhaust port 6 is at a high place, the by-product is postponed and captured by the low-level exhaust trap 33 by measures for by-products of the exhaust port 6 described later. As a result, the maintenance of the exhaust port 6 and the maintenance of the exhaust trap 33 can be reduced, and the maintainability can be improved.
[0023]
A pressure variable valve 34 and a pressure reducing pump 35 that can be opened and closed and adjusted in flow rate are provided downstream of the exhaust trap 33 in the exhaust pipe 7 so that the pressure in the processing container 2 can be controlled to a predetermined pressure reducing processing pressure. It is configured. The exhaust pipe 7 is made of, for example, a pipe made of SUS, preferably a pipe whose inner surface is coated with a fluorine-based resin coating material.
[0024]
As shown in FIG. 2, flange portions 36 and 37 are provided at the connection ends of the exhaust port 6 and the exhaust pipe 7, and O is a first airtight material between the opposing surfaces of the flange portions 36 and 37. A ring 29 is interposed, and in the vicinity of the O-ring 29, a cooling water passage 39 is provided as a cooling unit for suppressing thermal deterioration. In the illustrated example, an O-ring 29 is provided on the flange 37 side of the exhaust pipe 7, and a cooling water passage 39 is provided so as to approach the O-ring 29. The flange portions 36 and 37 are fastened by a clamp mechanism (not shown).
[0025]
In the heat treatment apparatus 1, the exhaust port 6 is provided at the top of the processing vessel 2, and the vicinity of the end surface 6 a of the exhaust port 6 is cooled by the cooling water passage 39 that cools the O-ring 29. In addition to the gas components coming into contact and easily attaching by-products, the by-products may fall into particles from the exhaust port 6 onto the wafer w in the processing container 2 and contaminate the wafer w. is there. Therefore, in order to prevent adhesion of by-products in the vicinity of the end surface 6a of the exhaust port 6 of the processing container 2 and prevent particle contamination of the wafer w, a plurality of gas blowing portions 40 for blowing gas from the inner peripheral surface are provided. An inner pipe 41 is provided in a predetermined range in the exhaust pipe 6, in the illustrated example, from the horizontal pipe 30 to the exhaust port 6.
[0026]
An annular gas passage 42 is formed between the inner pipe 41 and the inner periphery of the exhaust pipe (exhaust port 6 and horizontal pipe 30). In the horizontal pipe 30, a gas such as an inert gas, preferably nitrogen is passed through the gas passage 42. A gas supply port (gas supply port) 43 for supplying (N 2 ) gas is provided. A gas supply source is connected to the gas supply port 43 via a flow rate adjusting mechanism (not shown).
[0027]
In order to prevent gas from leaking from both ends of the gas passage 42, the inner periphery of the exhaust pipe is provided at the exhaust port side front end portion (front end member) and the exhaust pipe side rear end portion (rear end member) of the inner pipe 41. O-rings 44 and 45, which are second and third airtight materials for sealing between the two, are disposed. These O-rings 44 and 45 and before Symbol O-ring 29 is preferably made of a material such as fluorine-based resin having heat resistance. The exhaust gas flowing into the exhaust pipe 7 from the inside of the processing container 2 through the exhaust port 6 is hot in the processing container 2, but the temperature is lowered by natural heat radiation as it proceeds in the exhaust passage in the flow direction. The ring 45 is less likely to be thermally degraded, but the upstream O-ring 44 is likely to be thermally degraded. Therefore, in order to prevent thermal deterioration of the O-ring 44 at the exhaust port side tip, the exhaust port side tip of the inner tube 41 extends from the outer periphery to the exhaust tube side (horizontal tube side). An outlet 46 is provided, and an O-ring 44 is interposed between the cylindrical extension 46 and the inner periphery of the exhaust pipe 7 so as to approach the cooling water passage 39.
[0028]
Specifically, as shown in FIG. 3, the inner pipe 41 includes an annular front end member 41a disposed upstream in the exhaust gas flow direction, an annular rear end member 41c disposed downstream, and the distal ends thereof. It is comprised from the some cyclic | annular intermediate member 41b interposed between the member 41a and the rear-end member 41c. A female screw portion 47 is provided on the inner periphery of the front end side of the intermediate member 41b, and a male screw portion 48 having a screw pitch that can be screwed with the female screw portion 47 is provided on the outer periphery of the rear end side of the intermediate member 41b. The intermediate member 41 b is provided with a plurality of vent holes 49 in the circumferential direction on the downstream side adjacent to the female screw portion 47.
[0029]
The inner peripheral surface of the intermediate member 41b is a substantially horizontal flat surface 50 on the upstream side (the position of the female screw portion and the vent), but the downstream side is a tapered surface 51 that is gradually reduced in diameter. Further, an outer peripheral surface (step portion) 52 having a smaller diameter than the inner peripheral flat surface 50 on the distal end side is formed on the intermediate member 41b adjacent to the male screw portion 47 on the downstream side. With such a configuration, the plurality of intermediate members 41b can be connected in the longitudinal direction by screwing the male screw portion 48 of the other intermediate member 41c into the female screw portion 47 of the one intermediate member 41b, and an annular gas The gas that has entered the vent hole 49 from the passage 42 passes along the inner peripheral surface of the inner pipe 41 from the gap (gas blowing portion) 40 between the one front end side inner peripheral flat surface 50 and the other rear end side outer peripheral surface 52. It is blown out downstream.
[0030]
The rear end member 41 c is provided with a female screw portion 53 that is screwed into the male screw portion 48 of the intermediate member 41 b on the inner periphery on the front end side, and a plurality of vent holes on the downstream side adjacent to the female screw portion 53. 54 is provided in the circumferential direction. Further, a flange portion 55 is formed on the outer periphery of the rear end side of the rear end member 41c, and the O-ring 45 that seals the gap between the flange portion 55 and the inner periphery of the horizontal pipe 30 is interposed. Has been.
[0031]
The distal end member 41a is provided with an annular engagement groove 56 that engages with the distal end portion of the intermediate member 41b, and the cylindrical extending portion 46 that extends from the outer periphery to the downstream side. . The engaging groove 56 may be formed with a male screw portion into which the female screw portion 47 of the intermediate member 41b is screwed. The cylindrical extension 46 covers the outer periphery of one or several adjacent intermediate members 41b, and the annular gas is between the outer periphery of the intermediate member 41b and the inner periphery of the cylindrical extension 46. An annular gas passage 57 communicating with the passage 42 is formed. Further, in the inner periphery of the tip member 41a, there is a gap (gas blowing portion) for blowing the gas that has entered the vent hole 49 of the intermediate member 41b from the gas passage 57 to the downstream side along the inner peripheral surface of the intermediate member 41b. ) 40 is formed between the intermediate member 50 and the inner flat surface 50 of the intermediate member.
[0032]
The outer periphery of the tip member 41 a and the outer periphery of the cylindrical extension 46 are in contact with the inner periphery of the exhaust port 6 and the inlet-side inner periphery of the horizontal pipe 30. Further, a tapered portion 59 is formed on the inner periphery of the tip member 41a. The taper portion 59 gradually increases in diameter toward the tip in order to smoothly introduce the exhaust gas from the exhaust port 6 into the inner tube 41. In the illustrated example, an O-ring 44 is interposed between the outer periphery of the downstream end of the cylindrical extension piece 46 and the inner periphery of the horizontal tube 30, so that the inner periphery of the horizontal tube 30 has its inlet. A step portion 60 having a diameter larger than that of the side inner periphery is provided. However, if the O-ring 44 is embedded in the inner periphery of the horizontal tube 30, the step portion 60 is not necessarily provided.
[0033]
Heating portions such as pipe heaters 61 and 62 that heat the exhaust pipe near the end face 6a of the exhaust port 6, that is, the outer periphery of the exhaust port 6 and the outer periphery of the horizontal tube 30 at a temperature that suppresses adhesion of by-products, for example, about 250 ° C. Is preferably provided. Moreover, it is preferable that the same heating part, for example, the flange heaters 63 and 64, is provided on the surface (back surface) opposite to the opposing surfaces of the flanges 36 and 37 of the exhaust port 6 and the horizontal pipe 30. Furthermore, it is preferable that the gas is an inert gas, for example, nitrogen gas, heated to a temperature that suppresses adhesion of by-products.
[0034]
Next, the operation of the heat treatment apparatus having the above configuration and the heat treatment method will be described. When the transfer of the wafer w from the cassette (not shown) to the boat 18 is completed in the loading area 27, the boat 18 is loaded into the processing container 2 from the lower furnace port 3 by the ascending / descending mechanism 26 ascending the lid body 19. 3 is hermetically closed with a lid 19.
[0035]
Then, the inside of the processing container 2 is controlled to a predetermined pressure or degree of vacuum by depressurization exhausted by the exhaust pipe 7 connected to the exhaust port 6 and controlled to a predetermined processing temperature by the heater 8. Then, a processing gas is introduced into the gas introduction pipe 5 to start a predetermined heat treatment such as a CVD process on the wafer w. When the heat treatment is completed, the introduction of the processing gas is stopped, the inside of the processing container 2 is purged by the introduction of the inert gas, the lid 19 is lowered to open the inside of the processing container 2 and the boat 18 is opened. What is necessary is just to unload to the loading area 27.
[0036]
According to the heat treatment apparatus 1, since the processing vessel 2 has a single tube structure and a heat capacity smaller than that of the double tube structure, the characteristics of the heater 8 capable of rapid temperature rise and fall can be fully utilized. Improve ability. In addition, since the processing gas is introduced into the processing container 2 from the gas introduction pipe 5 provided on the lower side of the processing container 2, the processing gas is exhausted from the exhaust port 6 provided on the top of the processing container 2. A straight and uniform gas flow (upward flow) without a single flow or a biased flow from the lower side to the upper side in the processing container 2 can be formed, and the wafer w can be uniformly processed in the surface, thereby improving the yield and processing. Improve ability.
[0037]
In particular, the exhaust pipe 7 is connected to the end surface 6 a of the exhaust port 6 via an O-ring 29 and a cooling unit 39 is provided in the vicinity of the O-ring 29, so that by-products adhere to the vicinity of the end surface 6 a of the exhaust port 6. An inner tube 41 having a plurality of gas blowing portions 40 for blowing out gas from the inner peripheral surface to suppress gas is provided in a predetermined range from the exhaust pipe 7 to the exhaust port 6, and along the inner peripheral surface of the inner tube 41. By flowing gas, the adhesion of by-products in the vicinity of the end surface 6a of the exhaust port 6 is suppressed, so that the adhesion of by-products in the vicinity of the end surface 6a of the exhaust port 6 of the processing vessel 2 is suppressed. Particle contamination of w can be prevented, and the yield and processing capacity can be improved.
[0038]
Further, if a heating unit, for example, pipe heaters 61 and 62 for heating the exhaust pipe near the end surface 6a of the exhaust port 6 to a temperature that suppresses adhesion of by-products is provided, by-products near the end surface 6a of the exhaust port 6 are provided. Can be further suppressed, and the problem of particle contamination of the wafer w can be solved. Furthermore, if an inert gas heated to a temperature that suppresses by-product adhesion is used as the gas, adhesion of by-products in the vicinity of the end surface 6a of the exhaust port 6 of the processing vessel 2 can be further suppressed. And the problem of particle contamination of the wafer w can be solved.
[0039]
FIG. 4 is a cross-sectional view showing a reference example of an inner tube that is not an embodiment of the present invention . In this figure, the same parts as those of the above embodiment are given the same reference numerals, and the description thereof is omitted, and different parts are described. In the reference example of FIG. 4, no O-ring is provided between the cylindrical extension 46 at the tip of the inner pipe and the inner periphery of the horizontal pipe 30. Instead, the cylindrical extension 46 Is provided with a flange portion 65 that abuts and engages with a step portion 60 in the horizontal pipe 30. According to this, an O-ring can be made unnecessary.
[0040]
In the reference example which is not the embodiment of the present invention shown in FIG. 5, the distal end portion of the inner tube 41 is not provided with a cylindrical extending portion and an O-ring. The outer periphery of the tip portion (tip member) of the inner tube 41 is in contact with the inner periphery of the exhaust port 6, but a minute gap (tip) between the outer periphery of the tip portion of the inner tube 41 and the inner periphery of the exhaust port 6. By blowing out gas from the blowing part) 66, the adhering of by-products in the gap 66 is suppressed. In other words, the exhaust pipe side tip portion of the inner pipe 41 is provided with a tip blow-out portion 66 for blowing out gas so as to suppress adhesion of by-products between the inner periphery of the exhaust port 6, Adhesion of by-products that penetrate and adhere between the tip of the tube 41 and the inner periphery of the exhaust port 6 can be suppressed.
[0041]
Although the embodiments of the present invention have been described in detail with reference to the drawings, the present invention is not limited to the above-described embodiments, and various design changes and the like can be made without departing from the scope of the present invention. is there. For example, in the above-described embodiment, an example in which the present invention is applied to a batch processing type vertical heat treatment apparatus is shown. However, the present invention according to claim 1 is not limited thereto, and for example, a horizontal heat treatment apparatus or a single wafer. It can also be applied to a heat treatment apparatus of the type. Moreover, although the example which provided the exhaust port in the top part of the process container and was made into the upper exhaust structure is shown in the said embodiment, this invention which concerns on Claim 1 is not limited to this, For example, the downward direction of a process container The present invention can also be applied to a bottom exhaust structure provided with an exhaust port. The heat treatment in the present invention includes, for example, oxidation, diffusion, annealing and the like in addition to CVD. In addition to the O-ring, for example, a metal seal or the like may be used as the airtight material.
[0042]
Further, the gas supplied to the inner pipe is not limited to the inert gas, and may be, for example, a cleaning gas. For example, ClF 3 , NF 3 , HCl, HF, F 2 , and Cl 2 can be used as the cleaning gas. Thereby, adhesion of by-products in the vicinity of the end face of the exhaust port of the processing container can be further suppressed, and the particle contamination problem of the wafer can be solved. In addition to the semiconductor wafer, for example, a glass substrate, an LCD substrate, or the like is applicable as the object to be processed.
[0043]
【Effect of the invention】
In short, according to the present invention, the following effects can be obtained.
[0044]
According to the present invention, the exhaust pipe is connected to the end face of the exhaust port of the processing container for accommodating the object to be processed in the processing container and subjected to predetermined heat treatment via the first airtight material, and the first airtight material A cooling water passage that suppresses thermal degradation is provided in the vicinity of the exhaust gas, and a plurality of gases are blown out from the inner peripheral surface of the gas passage on the outer peripheral side so as to suppress adhesion of by-products near the end surface of the exhaust port. in the heat treatment apparatus of the inner tube is provided in a predetermined range of the exhaust mouth from an exhaust pipe having a gas blowout unit, connected between the exhaust port exhaust pipe is extended on the exhaust pipe side from the position of the exhaust port side end portion of the inner tube A cylindrical extension that covers the inner circumference in contact with the periphery of the portion and covers the inner circumference , and smoothly introduces exhaust gas into the inner pipe at the inner circumference of the tip of the cylindrical extension. Provided with a tapered portion that gradually increases in diameter toward the distal end, and from the rear end of the tapered portion to the distal end of the inner tube Of extending inwardly extending portion to form a gap for blown gas from the gas passage between the inner tube is provided with a downstream distal end outer periphery of the tubular extension portion of the exhaust pipe Since the second hermetic material is interposed between the inner periphery and the cooling water passage, the adhesion of by-products in the vicinity of the end face of the exhaust port of the processing container is suppressed, and particle contamination of the object to be processed is prevented. While being able to prevent , thermal deterioration of the 1st airtight material and the 2nd airtight material can be prevented with a common cooling water passage .
[Brief description of the drawings]
FIG. 1 is a diagram showing a configuration of a heat treatment apparatus according to an embodiment of the present invention.
FIG. 2 is an enlarged sectional view showing a main part of the heat treatment apparatus.
FIGS. 3A and 3B are diagrams showing a configuration of an inner tube, in which FIG. 3A is a cross-sectional view of a front end member, FIG. 3B is a cross-sectional view of an intermediate member, and FIG.
FIG. 4 is a cross-sectional view showing a modified example of the inner tube.
FIG. 5 is a cross-sectional view showing a modified example of the inner tube.
[Explanation of symbols]
1 Heat treatment apparatus w Semiconductor wafer (object to be processed)
2 Processing container 6 Exhaust port 7 Exhaust pipe 29 O-ring (airtight material)
39 Cooling water passage (cooling part)
40 Gas outlet 41 Inner tube 44 O-ring (airtight material)
46 Cylindrical extension 66 Tip outlet

Claims (4)

処理容器内に被処理体を収容して所定の熱処理を施す処理容器の排気口の端面に第1の気密材を介して排気管を接続し、前記第1の気密材の近傍にその熱的劣化を抑制するための冷却水通路を設け、前記排気口の端面付近における副生成物の付着を抑制すべくその外周側の気体通路からの気体を内周面から吹出す複数の気体吹出し部を有する内管を排気管内から排気口内の所定範囲に設けた熱処理装置において、前記内管の排気口側先端部の位置から排気管側に延出されて排気口と排気管の接続部の周辺の内周に接して該内周を被覆する筒状延出部を設け、該筒状延出部の先端部の内周に排気ガスを前記内管内に円滑に導入するための先端に向って漸次拡径したテーパー部を設けると共に該テーパー部の後端から前記内管の先端部の内側に延出して内管との間で前記気体通路からの気体を吹出させるための隙間を形成する延出部を設け、前記筒状延出部の下流側先端部外周と前記排気管の内周との間に第2の気密材を前記冷却水通路に接近させて介設したことを特徴とする熱処理装置。An exhaust pipe is connected to the end face of the exhaust port of the processing container for accommodating a target object in the processing container and subjected to a predetermined heat treatment via a first hermetic material, and the thermal conductivity is provided in the vicinity of the first hermetic material. A cooling water passage for suppressing deterioration is provided, and a plurality of gas blowing portions for blowing out gas from the gas passage on the outer peripheral side from the inner peripheral surface in order to suppress adhesion of by-products near the end face of the exhaust port. In the heat treatment apparatus in which the inner pipe is provided in a predetermined range from the exhaust pipe to the exhaust outlet, the inner pipe extends from the position of the tip on the exhaust outlet side of the inner pipe to the exhaust pipe side and around the connection portion between the exhaust outlet and the exhaust pipe . A cylindrical extension part is provided in contact with the inner periphery to cover the inner periphery , and gradually toward the tip for smoothly introducing exhaust gas into the inner pipe at the inner periphery of the tip of the cylindrical extension. A tapered portion having an enlarged diameter is provided and extends from the rear end of the tapered portion to the inner end of the inner tube. The extending portion to form a gap for blown gas from the gas passage between the inner tube is provided with, the inner periphery of the downstream side tip outer periphery and the exhaust pipe of the tubular extending portion A heat treatment apparatus characterized in that a second hermetic material is interposed between the cooling water passages . 前記気体が副生成物の付着を抑制する温度に加温された不活性ガスであることを特徴とする請求項1記載の熱処理装置。The heat treatment apparatus according to claim 1 wherein said gas and said inert gas der Rukoto which is heated to suppress temperature adhesion of by-products. 前記気体がクリーニングガスであることを特徴とする請求項1記載の熱処理装置。The heat treatment apparatus according to claim 1 wherein said gas and said cleaning gas der Rukoto. 前記処理容器が縦型の単管構造からなり、その頂部に前記排気口を備えていることを特徴とする請求項1記載の熱処理装置。Wherein the processing container is made of single tubular structure of a vertical heat treatment apparatus according to claim 1, wherein that you have provided the exhaust port on the top.
JP2001257187A 2001-08-28 2001-08-28 Heat treatment equipment Expired - Lifetime JP4963336B2 (en)

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JP2005109002A (en) * 2003-09-29 2005-04-21 Hitachi Kokusai Electric Inc Substrate processing equipment
JP5128168B2 (en) * 2006-04-24 2013-01-23 三菱電線工業株式会社 Exhaust system
KR100791073B1 (en) * 2006-08-16 2008-01-02 삼성전자주식회사 Exhaust Piping and Exhaust Systems with Turbulent Wings
JP5405208B2 (en) * 2009-06-25 2014-02-05 株式会社福井信越石英 Purification apparatus and method for purification of processed quartz glass
JP5549552B2 (en) * 2010-11-12 2014-07-16 東京エレクトロン株式会社 Method for assembling vacuum processing apparatus and vacuum processing apparatus
KR101213780B1 (en) * 2011-01-04 2012-12-18 아딕센진공코리아 유한회사 Energy conservation type silencer assembly and vacuum pump with the same for manufacturing of semiconductor and heat method of nitrogen gas
JP6008929B2 (en) 2013-12-17 2016-10-19 キヤノン株式会社 Ink mist collection device, inkjet recording device, and ink mist collection method
JP6054470B2 (en) 2015-05-26 2016-12-27 株式会社日本製鋼所 Atomic layer growth equipment
JP6054471B2 (en) 2015-05-26 2016-12-27 株式会社日本製鋼所 Atomic layer growth apparatus and exhaust layer of atomic layer growth apparatus
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JP5990626B1 (en) 2015-05-26 2016-09-14 株式会社日本製鋼所 Atomic layer growth equipment
JP6298141B2 (en) * 2016-11-29 2018-03-20 株式会社日本製鋼所 Atomic layer growth apparatus and exhaust layer of atomic layer growth apparatus
JP7492430B2 (en) 2020-10-12 2024-05-29 大同特殊鋼株式会社 Swinging duct and its manufacturing method
JP7624363B2 (en) 2021-08-06 2025-01-30 芝浦エレテック株式会社 Piping Unit

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Publication number Priority date Publication date Assignee Title
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JPH0927488A (en) * 1995-07-10 1997-01-28 Toshiba Corp Heat treating device
US5827370A (en) * 1997-01-13 1998-10-27 Mks Instruments, Inc. Method and apparatus for reducing build-up of material on inner surface of tube downstream from a reaction furnace

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