JP4869017B2 - Manufacturing method of long polishing pad - Google Patents

Description

  The present invention stabilizes flattening processing of optical materials such as lenses and reflecting mirrors, silicon wafers, glass substrates for hard disks, aluminum substrates, and materials that require high surface flatness such as general metal polishing processing, In addition, the present invention relates to a method for producing a long polishing pad that can be performed with high polishing efficiency. The long polishing pad obtained by the production method of the present invention is particularly suitable for a silicon wafer and a device on which an oxide layer, a metal layer, etc. are formed, before further laminating and forming these oxide layers and metal layers. It is suitably used in the step of flattening.

  When manufacturing a semiconductor device, a step of forming a conductive layer on the wafer surface and forming a wiring layer by photolithography, etching, or the like, or a step of forming an interlayer insulating film on the wiring layer These steps cause irregularities made of a conductor such as metal or an insulator on the wafer surface. In recent years, miniaturization of wiring and multilayer wiring have been advanced for the purpose of increasing the density of semiconductor integrated circuits, and along with this, technology for flattening the irregularities on the wafer surface has become important.

  As a method for flattening the irregularities on the wafer surface, chemical mechanical polishing (hereinafter referred to as CMP) is generally employed. CMP is a technique of polishing using a slurry-like abrasive (hereinafter referred to as slurry) in which abrasive grains are dispersed in a state where the surface to be polished of a wafer is pressed against the polishing surface of a polishing pad. As shown in FIG. 1, for example, a polishing apparatus generally used in CMP includes a polishing surface plate 2 that supports a polishing pad 1 and a support base (polishing head) 5 that supports a material to be polished (semiconductor wafer) 4. And a backing material for uniformly pressing the wafer, and an abrasive supply mechanism. The polishing pad 1 is attached to the polishing surface plate 2 by attaching it with a double-sided tape, for example. The polishing surface plate 2 and the support base 5 are disposed so that the polishing pad 1 and the material to be polished 4 supported by each of the polishing surface plate 2 and the support base 5 are opposed to each other, and are provided with rotating shafts 6 and 7 respectively. Further, a pressurizing mechanism for pressing the workpiece 4 against the polishing pad 1 is provided on the support base 5 side.

  Conventionally, such a polishing pad is produced by 1) pouring a resin material into a mold to produce a resin block, and slicing the resin block with a slicer, and 2) pouring the resin material into the mold and pressing it. Thus, it has been produced by a batch method such as a method for producing a thin sheet, and 3) a method in which a resin as a raw material is dissolved and extruded from a T-die and directly produced into a sheet. For example, in Patent Document 1, a polishing pad is manufactured by a reaction injection molding method.

  In addition, in the case of a laminated polishing pad, since it was manufactured by bonding a plurality of resin sheets such as a polishing layer and a cushion layer obtained by the above method with an adhesive or a double-sided tape, there are many manufacturing steps and productivity is poor. Had the problem. In order to solve the problem, in Patent Document 2, a laminated polishing pad is manufactured using an extruder.

  In addition, a method for continuously producing a polyurethane / polyurea abrasive sheet material has been proposed in order to prevent variations in hardness, bubble size, and the like due to a batch production method (Patent Document 3). Specifically, a polyurethane raw material is mixed with a fine powder having a particle size of 300 μm or less and an organic foaming agent, and the mixture is discharged and cast between a pair of endless track belts. Thereafter, a polymerization reaction of the mixture is performed by a heating means, and the produced sheet-like molded product is separated from the face belt to obtain an abrasive sheet material.

  On the other hand, a polyurethane foam sheet is generally used as a polishing pad used for high-precision polishing. However, although the polyurethane foam sheet is excellent in local flattening ability, it is difficult to apply a uniform pressure to the entire wafer surface because of insufficient cushioning properties. For this reason, usually, a soft cushion layer is separately provided on the back surface of the polyurethane foam sheet, and is used for polishing as a laminated polishing pad. For example, the following polishing pads have been developed.

  A polishing pad is disclosed in which a relatively hard first layer and a relatively soft second layer are laminated, and a groove having a predetermined pitch or a protrusion having a predetermined shape is provided on the polishing surface of the first layer. (Patent Document 4).

  Also, a first sheet-like member having elasticity and having irregularities formed on the surface, and a surface that is provided on the surface of the first sheet-like member on which the irregularities are formed and that faces the surface to be polished of the substrate to be processed A polishing cloth having a second sheet-like portion is disclosed (Patent Document 5).

  Furthermore, a polishing pad is disclosed that includes a polishing layer and a support layer that is laminated on one surface of the polishing layer and is a foam having a higher compressibility than the polishing layer (Patent Document 6).

  However, since the conventional laminated polishing pad is manufactured by bonding the polishing layer and the cushion layer with a double-sided tape (adhesive layer), the slurry enters between the polishing layer and the cushion layer during polishing. As a result, the adhesive force of the double-sided tape is weakened, and as a result, the polishing layer and the cushion layer are peeled off.

  Further, when performing CMP, there is a problem of determining the flatness of the wafer surface. In other words, it is necessary to detect when the desired surface characteristics or planar state is reached. Conventionally, with regard to the thickness of the oxide film, the polishing rate, and the like, a test wafer is periodically processed, and after confirming the result, a product wafer is polished.

  However, in this method, the time and cost for processing the test wafer are wasted, and the polishing result differs between the test wafer and the product wafer that have not been processed in advance due to the loading effect peculiar to CMP. If it is not actually processed, it is difficult to accurately predict the processing result.

  Therefore, recently, in order to solve the above-mentioned problems, there is a demand for a method capable of detecting a point in time when desired surface characteristics and thickness are obtained in the CMP process. Various methods are used for such detection. From the viewpoint of measurement accuracy and spatial resolution in non-contact measurement, an optical detection method in which a film thickness monitoring mechanism using a laser beam is incorporated in a rotating surface plate ( Patent Documents 7 and 8) are becoming mainstream.

  Specifically, the optical detection means detects a polishing end point by irradiating a wafer with a light beam through a window (light transmission region) through a polishing pad and monitoring an interference signal generated by the reflection. Is the method.

  Currently, white light using a He—Ne laser light having a wavelength near 600 nm or a halogen lamp having a wavelength light in the range of 380 to 800 nm is generally used as the light beam.

  In such a method, the end point is determined by monitoring the change in the thickness of the surface layer of the wafer and knowing the approximate depth of the surface irregularities. When such a change in thickness becomes equal to the depth of the unevenness, the CMP process is terminated. Various methods have been proposed for the polishing end point detection method using such optical means and the polishing pad used in the method.

  For example, a polishing pad having at least a part of a transparent polymer sheet that transmits solid and homogeneous light having a wavelength of 190 nm to 3500 nm is disclosed (Patent Document 9). Further, a polishing pad in which a stepped transparent plug is inserted is disclosed (Patent Document 10). Moreover, a polishing pad having a transparent plug that is flush with the polishing surface is disclosed (Patent Document 11).

  On the other hand, proposals (Patent Documents 12 and 13) have been made to prevent the slurry from leaking from the boundary (seam) between the polishing region and the light transmission region. However, even when these transparent leakage prevention sheets are provided, the slurry leaks from the boundary (seam) between the polishing region and the light transmission region to the lower part of the polishing layer, and the slurry accumulates on the leakage prevention sheet to cause an optical end point. Problems with detection.

  In addition, the first resin rod or plug is placed in the liquid second resin, the second resin is cured to produce a molded product, and the molded product is sliced to polish the light transmission region and the polished product. A method of manufacturing a polishing pad in which regions are integrated is disclosed (Patent Document 14). However, in the manufacturing method described above, stress due to the difference in thermal shrinkage between the two materials remains at the bonding interface between the two materials during molding, and slurry leakage may occur due to easy peeling at the bonding interface.

  Further, before rapidly cooling the primary annealed window to a predetermined temperature, a polishing pad material is supplied to the outer periphery of the primary annealed window, the window and the polishing pad material are subjected to secondary annealing together, and then the molding is performed. A method of manufacturing a polishing pad by slicing an object is disclosed (Patent Document 15). However, in the manufacturing method described above, excessive stress is applied to the window when the polishing pad material cures and shrinks, and residual stress deformation or swelling may occur in the window. As a result, the flatness of the window is impaired, and the optical detection accuracy may be reduced.

  Moreover, in order to prevent a slurry leak, the method of arrange | positioning the transparent film with which the adhesive agent was apply | coated to the upper and lower surfaces between the upper layer pad and the lower layer pad is disclosed (patent document 16). However, if there is an adhesive layer between the light transmission region and the transparent film, the light transmittance is lowered, so that the optical detection accuracy may be lowered.

JP 2004-42189 A JP 2003-220550 A JP 2004-169038 A JP 2003-53657 A JP-A-10-329005 JP 2004-25407 A US Pat. No. 5,069,002 US Pat. No. 5,081,421 Japanese National Patent Publication No. 11-512977 Japanese Patent Laid-Open No. 9-7985 Japanese Patent Laid-Open No. 10-83977 JP 2001-291686 A Japanese translation of PCT publication No. 2003-510826 JP 2005-210143 A JP 2005-354077 A JP 2003-68686 A

  It is an object of the present invention to provide a method for manufacturing a long polishing pad that can prevent slurry leakage from between a polishing region and a light transmission region and is excellent in optical detection accuracy with high productivity.

  As a result of intensive studies to solve the above-mentioned problems, the present inventors have found that the above object can be achieved by a method for producing a long polishing pad described below, and have completed the present invention.

  That is, the method for producing a long polishing pad of the present invention includes a step of preparing a cell-dispersed urethane composition by a mechanical foaming method, a transparent support film is disposed in a long mold, and injection holes are formed at predetermined positions on the support film. And a step of disposing a mold for forming a light transmission region having an injection wall, a step of discharging a light transmission region formation material into the injection hole, and curing the light transmission region formation material to form a light transmission region, A step of discharging the cell-dispersed urethane composition onto the transparent support film outside the injection hole and curing the cell-dispersed urethane composition to form a polished region; and the light-transmitting region forming mold and the long mold And a step of producing a long polishing layer having a gap between the light transmission region and the polishing region.

  According to the manufacturing method, a long polishing layer having a light transmission region can be easily manufactured, and a long polishing pad can be manufactured with high productivity. Moreover, since the light transmission region and the polishing region are formed on the transparent support film, the slurry does not leak below the transparent support film during polishing. In addition, since the light transmission region of the present invention is formed directly on the transparent support film (self-adhering), the optical transmission region is more optical than the case where the light transmission region and the support film are bonded using an adhesive. Excellent detection accuracy. Furthermore, in the manufacturing method of the present invention, since a gap is provided between the light transmission region and the polishing region, no stress due to the thermal shrinkage difference remains between the two materials. Thereby, it is possible to solve the disadvantage that both members are peeled off due to residual stress during polishing as in a conventional polishing pad and affect the polishing characteristics. The obtained long polishing layer may be used alone as a long polishing pad, or may be a laminated type long polishing pad by laminating a cushion layer on one side of a transparent support film.

  The light transmission region is preferably made of a thermosetting resin, particularly preferably a thermosetting polyurethane resin. In that case, since the light transmission region forming material and the cell dispersed urethane composition can be thermally cured at the same time, the manufacturing process becomes simple.

  The thickness of the injection wall of the light transmission region forming mold is preferably 1 mm or less. When the thickness of the injection wall exceeds 1 mm, the gap between the light transmission region and the polishing region becomes too wide, and the slurry tends to accumulate in the gap, so that scratches tend to occur.

  The polishing region of the polishing layer in the present invention is made of a polyurethane foam having fine bubbles. Polyurethane is a preferred material for forming the polishing region because it has excellent wear resistance and a polymer having desired physical properties can be easily obtained by variously changing the raw material composition.

  The polyurethane is composed of an isocyanate component, a polyol component (high molecular weight polyol, low molecular weight polyol), and a chain extender.

  As the isocyanate component, a known compound in the field of polyurethane can be used without particular limitation. As the isocyanate component, 2,4-toluene diisocyanate, 2,6-toluene diisocyanate, 2,2′-diphenylmethane diisocyanate, 2,4′-diphenylmethane diisocyanate, 4,4′-diphenylmethane diisocyanate, 1,5-naphthalene diisocyanate, aromatic diisocyanates such as p-phenylene diisocyanate, m-phenylene diisocyanate, p-xylylene diisocyanate, m-xylylene diisocyanate, ethylene diisocyanate, 2,2,4-trimethylhexamethylene diisocyanate, 1,6-hexamethylene diisocyanate, etc. Aliphatic diisocyanate, 1,4-cyclohexane diisocyanate, 4,4'-dicyclohexylmethane diisocyanate, isophorone diisocyanate Isocyanate, alicyclic diisocyanates such as norbornane diisocyanate. These may be used alone or in combination of two or more.

  As the isocyanate component, a trifunctional or higher polyfunctional polyisocyanate compound can be used in addition to the diisocyanate compound. As a polyfunctional isocyanate compound, a series of diisocyanate adduct compounds are commercially available as Desmodur-N (manufactured by Bayer) or trade name Duranate (manufactured by Asahi Kasei Kogyo Co., Ltd.).

  Of the above isocyanate components, it is preferable to use an aromatic diisocyanate and an alicyclic diisocyanate in combination, and it is particularly preferable to use toluene diisocyanate and dicyclohexylmethane diisocyanate in combination.

  Examples of the high molecular weight polyol include polyether polyols typified by polytetramethylene ether glycol, polyester polyols typified by polybutylene adipate, polycaprolactone polyol, and a reaction product of a polyester glycol such as polycaprolactone and alkylene carbonate. Polyester polycarbonate polyol, polyester carbonate polyol obtained by reacting ethylene carbonate with polyhydric alcohol and then reacting the resulting reaction mixture with organic dicarboxylic acid, and polycarbonate polyol obtained by transesterification reaction between polyhydroxyl compound and aryl carbonate Etc. These may be used alone or in combination of two or more.

  The number average molecular weight of the high molecular weight polyol is not particularly limited, but is preferably 500 to 2000 from the viewpoint of the elastic properties of the resulting polyurethane resin. When the number average molecular weight is less than 500, a polyurethane resin using the number average molecular weight does not have sufficient elastic properties and becomes a brittle polymer. For this reason, the polishing region manufactured from this polyurethane resin becomes too hard, which causes scratches on the wafer surface. Moreover, since it becomes easy to wear, it is not preferable from the viewpoint of the pad life. On the other hand, when the number average molecular weight exceeds 2000, a polyurethane resin using the number average molecular weight becomes too soft, and a polishing region produced from the polyurethane resin tends to be inferior in flattening characteristics.

  In addition to the above-described high molecular weight polyol as a polyol component, ethylene glycol, 1,2-propylene glycol, 1,3-propylene glycol, 1,4-butanediol, 1,6-hexanediol, neopentyl glycol, 1,4 -It is preferable to use a low molecular weight polyol such as cyclohexanedimethanol, 3-methyl-1,5-pentanediol, diethylene glycol, triethylene glycol, 1,4-bis (2-hydroxyethoxy) benzene or the like. Low molecular weight polyamines such as ethylenediamine, tolylenediamine, diphenylmethanediamine and diethylenetriamine may be used.

  The ratio of the high molecular weight polyol to the low molecular weight polyol in the polyol component is determined by the characteristics required for the polishing region produced from these.

  When a polyurethane foam is produced by a prepolymer method, a chain extender is used for curing the prepolymer. The chain extender is an organic compound having at least two active hydrogen groups, and examples of the active hydrogen group include a hydroxyl group, a primary or secondary amino group, and a thiol group (SH). Specifically, 4,4′-methylenebis (o-chloroaniline) (MOCA), 2,6-dichloro-p-phenylenediamine, 4,4′-methylenebis (2,3-dichloroaniline), 3,5 -Bis (methylthio) -2,4-toluenediamine, 3,5-bis (methylthio) -2,6-toluenediamine, 3,5-diethyltoluene-2,4-diamine, 3,5-diethyltoluene-2 , 6-diamine, trimethylene glycol-di-p-aminobenzoate, 1,2-bis (2-aminophenylthio) ethane, 4,4′-diamino-3,3′-diethyl-5,5′-dimethyl Diphenylmethane, N, N′-di-sec-butyl-4,4′-diaminodiphenylmethane, 3,3′-diethyl-4,4′-diaminodiphenylmethane, m-xyl And polyamines exemplified by N, N'-di-sec-butyl-p-phenylenediamine, m-phenylenediamine, and p-xylylenediamine, or the above-mentioned low molecular weight polyols and low molecular weight polyamines. be able to. These may be used alone or in combination of two or more.

  The ratio of the isocyanate component, the polyol component, and the chain extender in the present invention can be variously changed depending on the molecular weight of each, the desired physical properties of the polishing region, and the like. In order to obtain a polishing region having desired polishing characteristics, the number of isocyanate groups of the isocyanate component relative to the total number of active hydrogen groups (hydroxyl group + amino group) of the polyol component and the chain extender is 0.80 to 1.20. Is more preferable, and 0.99 to 1.15 is more preferable. When the number of isocyanate groups is outside the above range, curing failure occurs and the required specific gravity and hardness cannot be obtained, and the polishing characteristics tend to be deteriorated.

  Polyurethane foam can be produced by either the prepolymer method or the one-shot method, but an isocyanate-terminated prepolymer is synthesized in advance from an isocyanate component and a polyol component, and this is reacted with a chain extender. The method is suitable because the physical properties of the resulting polyurethane are excellent.

  As the isocyanate-terminated prepolymer, those having a molecular weight of about 800 to 5000 are preferable because of excellent processability and physical characteristics.

  The polyurethane foam is produced by curing a cell-dispersed urethane composition obtained by mixing a first component containing an isocyanate group-containing compound and a second component containing an active hydrogen group-containing compound. In the prepolymer method, the isocyanate-terminated prepolymer becomes an isocyanate group-containing compound, and the chain extender becomes an active hydrogen group-containing compound. In the one-shot method, the isocyanate component becomes an isocyanate group-containing compound, and the chain extender and the polyol component become active hydrogen group-containing compounds.

  The cell-dispersed urethane composition is prepared by a mechanical foaming method. In particular, a mechanical foaming method using a silicone surfactant which is a copolymer of polyalkylsiloxane and polyether and does not have an active hydrogen group is preferable. As such a silicon-based surfactant, SH-192, L-5340 (manufactured by Toray Dow Corning Silicon) and the like are exemplified as suitable compounds. The addition amount of the silicon-based surfactant is preferably 0.05 to 5% by weight in the polyurethane foam. When the amount of the silicon-based surfactant is less than 0.05% by weight, a fine-bubble foam tends to be not obtained. On the other hand, if it exceeds 5% by weight, it tends to be difficult to obtain a polyurethane foam with high hardness due to the plastic effect of the silicon surfactant.

  In addition, you may add stabilizers, such as antioxidant, a lubricant, a pigment, a filler, an antistatic agent, and another additive as needed.

An example of a method for preparing the cell-dispersed urethane composition will be described below. The method for preparing such a cell dispersed urethane composition has the following steps.
1) Foaming process for producing a cell dispersion of isocyanate-terminated prepolymer A silicon-based surfactant is added to the isocyanate-terminated prepolymer (first component), and the mixture is stirred in the presence of a non-reactive gas to remove the non-reactive gas. Disperse as fine bubbles to obtain a cell dispersion. When the prepolymer is solid at normal temperature, it is preheated to an appropriate temperature and melted before use.
2) Curing agent (chain extender) mixing step A chain extender (second component) is added to the above cell dispersion, mixed and stirred to prepare a cell dispersed urethane composition.

  As the non-reactive gas used to form the fine bubbles, non-flammable gases are preferable, and specific examples include nitrogen, oxygen, carbon dioxide, rare gases such as helium and argon, and mixed gases thereof. In view of cost, it is most preferable to use air that has been dried to remove moisture.

  A known stirring device can be used without particular limitation as a stirring device for dispersing non-reactive gas in the form of fine bubbles and dispersed in the first component containing the silicon-based surfactant. Specifically, a homogenizer, a dissolver, 2 A shaft planetary mixer (planetary mixer) is exemplified. The shape of the stirring blade of the stirring device is not particularly limited, but it is preferable to use a whipper type stirring blade because fine bubbles can be obtained.

  You may add the catalyst which accelerates | stimulates well-known polyurethane reactions, such as a tertiary amine type | system | group, to a cell dispersion | distribution urethane composition. The type and addition amount of the catalyst are selected in consideration of the flow time for pouring into a mold having a predetermined shape after the mixing step.

  The transparent support film used in the present invention is not particularly limited, but is preferably a resin film having high transparency, heat resistance and flexibility. Examples of the material of the resin film include: polyester; polyethylene; polypropylene; polystyrene; polyimide; polyvinyl alcohol; polyvinyl chloride; And special engineering plastics such as polyetheretherketone and polyethersulfone.

  The thickness of the transparent support film is not particularly limited, but is preferably about 20 to 200 μm from the viewpoints of strength and winding. The width of the transparent support film is not particularly limited, but is preferably about 60 to 250 cm in consideration of the required size of the polishing layer. The length of the transparent support film can be appropriately set according to the required length of the polishing layer, but is usually about 9 to 20 m, preferably 10 to 15 m because a lead part (about 2 m for each of the front and rear) is required. It is.

  The light transmissive region forming material used in the present invention is not particularly limited, but enables highly accurate optical end point detection in a state where polishing is performed, and the light transmittance is 40% or more over the entire wavelength range of 300 to 800 nm. A material is preferably used, and more preferably a material having a light transmittance of 50% or more. Examples of such materials include thermosetting resins such as polyurethane resins, polyester resins, phenol resins, urea resins, melamine resins, epoxy resins, and acrylic resins; polyurethane resins, polyester resins, polyamide resins, cellulose resins, Thermoplastic resins such as acrylic resins, polycarbonate resins, halogen resins (polyvinyl chloride, polytetrafluoroethylene, polyvinylidene fluoride, etc.), polystyrene, and olefin resins (polyethylene, polypropylene, etc.); light such as ultraviolet rays and electron beams And a photo-curable resin that is cured by the above-described method and a photosensitive resin. These resins may be used alone or in combination of two or more. The thermosetting resin is preferably one that cures at a relatively low temperature. When using a photocurable resin, it is preferable to use a photopolymerization initiator in combination. Among these, it is preferable to use a thermosetting resin, and it is particularly preferable to use a thermosetting polyurethane resin.

  Hereinafter, a method for producing the long polishing pad of the present invention will be described. FIG. 2 is a cross-sectional view of the long polishing pad of the present invention. FIG. 3 is a schematic view showing an example of the production process of the long polishing pad of the present invention.

  The long mold 13 is composed of a bottom plate and a long frame. First, the transparent support film 11 is disposed on the bottom plate, and a long form frame is disposed on the transparent support film 11. Then, the bottom plate and the long mold are clamped so that the cast material does not leak from the gap between the transparent support film and the long mold. The transparent support film is preferably provided approximately 2 m larger than the long frame. The length of the long form can be appropriately set in consideration of the required length of the polishing layer, but is usually about 5 to 15 m, preferably 7 to 10 m. The width of the long form is not particularly limited, but is preferably about 60 to 250 cm in consideration of the required size of the polishing layer. The height of the long form is not particularly limited, but is preferably about 10 to 60 mm from the viewpoint of the required thickness of the polishing region and the prevention of overflow during casting.

  After that, as shown in FIG. 3, the light transmission region forming mold 14 is arranged at a predetermined position on the transparent support film 11.

  FIG. 4- (a) is a schematic view showing a cross-sectional structure in the X direction of the light transmission region forming mold. FIG. 4- (b) is a schematic diagram showing a top structure of a light transmission region forming mold. FIG. 4- (c) is a schematic diagram showing the bottom structure of the light transmission region forming mold.

  The light-transmitting region forming mold 14 can be produced by a casting method using, for example, metal or plastic as a raw material. The length of the light transmission region forming mold is not particularly limited as long as it can be set on the long mold as shown in FIG. The light transmission region forming mold has an injection hole 15 and an injection wall 16. The injection hole is a hole for injecting the light transmission region forming material 17 to form the light transmission region 10. The injection wall is a wall for preventing the light transmission region forming material 17 and the cell dispersed urethane composition 12 from being mixed, and for forming a certain gap between the light transmission region 10 and the polishing region 9. The wall.

  The length of the injection hole 15 is appropriately adjusted according to the inner wall length of the long mold. In addition, the width of the injection hole 15 can be appropriately set according to the required width of the light transmission region, but is preferably about 0.5 to 2 cm. Further, one injection hole 15 may be provided continuously as shown in FIG. 4B, or a plurality of injection holes 15 may be provided intermittently at a predetermined interval.

  The height of the injection wall 16 is generally about 10 to 60 mm, preferably 20 to 50 mm, from the viewpoint of the required thickness of the polishing region and prevention of overflow during casting. Further, the thickness of the injection wall 16 can be appropriately set in consideration of the space width between the light transmission region and the polishing region, but is preferably 1 mm or less, more preferably 0.9 mm or less. The surface of the injection wall 16 is preferably subjected to a mold release process.

  Thereafter, the light transmission region forming material 17 is discharged into the injection hole 15, and the light transmission region forming material 17 is cured to form the light transmission region 10. Further, the foam dispersed urethane composition 12 is discharged onto the transparent support film 11 outside the injection hole 15, and the foam dispersed urethane composition 12 is cured to form the polishing region 9. Either of the two steps may be performed first, or may be performed simultaneously. In consideration of work efficiency, it is preferable to perform the two steps simultaneously. The discharge amounts of the light transmission region forming material 17 and the cell dispersed urethane composition 12 are appropriately adjusted in consideration of the thickness and area of the light transmission region and the thickness and area of the polishing region.

  Curing of the light transmission region forming material 17 and the cell dispersed urethane composition 12 is performed, for example, by passing through a heating oven provided on a conveyor after the thickness is uniformly adjusted. The heating temperature is about 40 to 100 ° C., and the heating time is about 5 to 10 minutes. Heating and post-curing the cell-dispersed urethane composition that has reacted until it no longer flows has the effect of improving the physical properties of the polyurethane foam. In the case where the light transmission region forming material is a thermoplastic resin, the cell-dispersed urethane composition is cured by cooling after cooling the cell-dispersed urethane composition. Further, when the light transmission region forming material is a photocurable resin, it is cured by irradiation with light such as ultraviolet rays or electron beams. The light transmission region preferably contains as few bubbles as possible from the viewpoint of increasing the light transmittance.

  Thereafter, the mold for forming a light transmission region and the long mold are released to produce a long polishing layer having a gap between the light transmission region and the polishing region. The obtained long polishing layer may be post-cured, or the length may be appropriately adjusted according to the polishing apparatus to be used. Further, the long polishing layer becomes a long polishing pad through a step of forming a concavo-convex structure on the polishing surface.

  It is preferable that the average bubble diameter of a grinding | polishing area | region is 30-80 micrometers, More preferably, it is 30-60 micrometers. When deviating from this range, the polishing rate tends to decrease, or the planarity of the polished material (wafer) after polishing tends to decrease.

  Although the thickness of a grinding | polishing area | region is not specifically limited, Usually, it is about 0.8-4 mm, and it is preferable that it is 1.2-2.5 mm.

  The specific gravity of the polishing region is preferably 0.5 to 1.0. When the specific gravity is less than 0.5, the strength of the polished surface is lowered and the planarity (flatness) of the material to be polished tends to deteriorate. On the other hand, when the ratio is larger than 1.0, the number of fine bubbles on the polishing surface decreases, and the planarization characteristics are good, but the polishing rate tends to deteriorate.

  The hardness of the polishing region is preferably 45 to 65 degrees with an Asker D hardness meter. When the D hardness is less than 45 degrees, the planarity (flatness) of the material to be polished tends to deteriorate. On the other hand, when the angle is larger than 65 degrees, the planarity is good, but the uniformity (uniformity) of the material to be polished tends to deteriorate.

  The thickness variation in the polishing region is preferably 100 μm or less. When the thickness variation exceeds 100 μm, the polishing region has a large undulation, and there are portions where the contact state with the material to be polished is different, which adversely affects the polishing characteristics. Further, in order to eliminate the thickness variation of the polishing region, in general, the polishing surface is dressed with a dresser in which diamond abrasive grains are electrodeposited and fused in the initial stage of polishing, but those exceeding the above range are The dressing time becomes longer and the production efficiency is lowered.

  As a method for suppressing the thickness variation in the polishing region, there is a method of buffing the surface of the long polishing layer with a buffing machine. In addition, when buffing, it is preferable to perform in stages with abrasives having different particle sizes.

  The thickness of the light transmission region is not particularly limited, but is preferably equal to or less than the thickness of the polishing region. If the light transmission region is thicker than the polishing region, the object to be polished may be damaged by the protruding portion during polishing.

  In the long polishing pad of the present invention, the polishing surface that comes into contact with the material to be polished (wafer) preferably has an uneven structure for holding and renewing the slurry. The polishing area made of foam has many openings on the polishing surface and has the function of holding and updating the slurry. By forming a concavo-convex structure on the polishing surface, the slurry can be held and updated more efficiently. It can be performed well, and destruction of the material to be polished due to adsorption with the material to be polished can be prevented. The concavo-convex structure is not particularly limited as long as it is a shape that holds and renews the slurry. For example, an XY lattice groove, a concentric circular groove, a through hole, a non-penetrating hole, a polygonal column, a cylinder, a spiral groove, Examples include eccentric circular grooves, radial grooves, and combinations of these grooves. In addition, these uneven structures are generally regular, but in order to make the slurry retention and renewability desirable, the groove pitch, groove width, groove depth, etc. should be changed for each range. Is also possible.

  The method for producing the concavo-convex structure is not particularly limited. For example, a method of machine cutting using a jig such as a tool of a predetermined size, a method of pressing a resin with a press plate having a predetermined surface shape And a method of producing by photolithography, a method of producing by using a printing method, a method of producing by laser light using a carbon dioxide gas laser, and the like.

  The long polishing pad of the present invention may be a laminate of the long polishing layer and a cushion sheet (cushion layer).

  The cushion sheet supplements the characteristics of the polishing layer. The cushion sheet is necessary for achieving both planarity and uniformity in a trade-off relationship in CMP. Planarity refers to the flatness of a pattern portion when a wafer with minute irregularities generated during pattern formation is polished, and uniformity refers to the uniformity of the entire wafer. Planarity is improved by the characteristics of the foam sheet, and uniformity is improved by the characteristics of the cushion sheet. In the long polishing pad of the present invention, it is preferable to use a cushion sheet that is softer than the polishing region.

  Examples of the cushion sheet include a fiber nonwoven fabric such as a polyester nonwoven fabric, a nylon nonwoven fabric, and an acrylic nonwoven fabric, a resin-impregnated nonwoven fabric such as a polyester nonwoven fabric impregnated with polyurethane, a polymer resin foam such as polyurethane foam and polyethylene foam, a butadiene rubber, Examples thereof include rubber resins such as isoprene rubber and photosensitive resins.

  Examples of means for attaching the long polishing layer and the cushion sheet include a method of sandwiching and pressing the long polishing layer and the cushion sheet with a double-sided tape.

  In the long polishing pad of the present invention, a double-sided tape may be provided on the side of the long polishing layer or the cushion layer that adheres to the platen.

  The semiconductor device is manufactured through a step of polishing the surface of the semiconductor wafer using the long polishing pad. A semiconductor wafer is generally a laminate of a wiring metal and an oxide film on a silicon wafer. The semiconductor wafer polishing method and polishing apparatus are not particularly limited. For example, the semiconductor wafer is polished by the following method.

  FIG. 5 is a schematic view showing a method for polishing a semiconductor wafer using a web-type polishing apparatus. Initially, the long polishing pad 8 is mainly wound around the supply roll 18a. When a large number of semiconductor wafers 4 are polished, the polishing pad in the used area is wound up by the collection roll 18b, and the polishing pad in the unused area is sent out from the supply roll 18a.

  FIG. 6 is a schematic view showing a method for polishing a semiconductor wafer using a linear polishing apparatus. The long polishing pad 8 is arranged in a belt shape so as to rotate around the roll 19. Then, the semiconductor wafers 4 are polished one after another on the polishing pad moving linearly.

  FIG. 7 is a schematic view showing a method for polishing a semiconductor wafer using a reciprocating polishing apparatus. The long polishing pad 8 is disposed in a belt shape so as to reciprocate between the rolls 19. Then, the semiconductor wafers 4 are polished one after another on the polishing pad that reciprocates left and right.

  Although not shown in the figure, the above polishing apparatus usually has a polishing surface plate (platen) for supporting a long polishing pad, a support base (polishing head) for supporting a semiconductor wafer, and uniform pressure on the wafer. A backing material for carrying out and a supply mechanism of an abrasive (slurry) are provided. The polishing surface plate and the support table are arranged so that the long polishing pad and the semiconductor wafer supported by each of the polishing table and the support table face each other, and the support table includes a rotation shaft. In polishing, the semiconductor wafer is pressed against the long polishing pad while rotating the support base, and polishing is performed while supplying slurry. The flow rate of the slurry, the polishing load, the wafer rotation speed, and the like are not particularly limited, and are adjusted as appropriate.

  As a result, the protruding portion of the surface of the semiconductor wafer is removed and polished flat. Thereafter, a semiconductor device is manufactured by dicing, bonding, packaging, or the like. The semiconductor device is used for an arithmetic processing device, a memory, and the like.

  Hereinafter, the present invention will be described with reference to examples, but the present invention is not limited to these examples.

Example 1
100 parts by weight of an isocyanate-terminated prepolymer (Uniroyal, Adiprene L-325) adjusted to 70 ° C. and 3 parts by weight of a silicon-based surfactant (Toray Dow Corning Silicone, SH-192) were added to the container. The mixture was mixed, adjusted to 80 ° C. and degassed under reduced pressure. Thereafter, using a biaxial mixer, the mixture was vigorously stirred for about 4 minutes so that air bubbles were taken into the container at a rotation speed of 900 rpm. Thereto, 26.2 parts by weight of 4,4′-methylenebis (o-chloroaniline) (Ihara Chemical Co., Ltd., Cuamine MT) previously melted at 120 ° C. was added, and the mixture was stirred for about 70 seconds to disperse bubbles. A urethane composition was prepared.

  100 parts by weight of isocyanate-terminated prepolymer (manufactured by Nippon Polyurethane Co., Ltd., C-2612) adjusted to 80 ° C., 9 parts by weight of trimethylolpropane, and 21 parts by weight of polytetramethylene ether glycol having a number average molecular weight of 650 are mixed and removed. A light transmitting region forming material was prepared by bubbling.

  A transparent support film (PET, manufactured by Toyobo Co., Ltd., E5001, thickness: 75 μm) is laid on the bottom plate made of aluminum coated with Teflon (registered trademark) on the surface, and the surface is coated with Teflon (registered trademark) on the transparent support film. A long mold frame made of aluminum (internal length: 520 cm, internal width: 80 cm, internal height: 30 mm) was placed. Thereafter, the bottom plate and the long formwork were clamped. The transparent support film was provided about 2 m larger than the long frame. Thereafter, a mold for forming a light transmission region having a shape shown in FIG. 4 having a shape shown in FIG. 4 (made of SUS, length of injection hole: 520 cm, width of injection hole: 12 mm, injection wall) Height: 30 mm, injection wall thickness: 1 mm).

  And the cell-dispersed urethane composition was discharged onto the transparent support film outside the injection hole, and the light transmission region forming material was discharged onto the transparent support film inside the injection hole. Thereafter, the long mold was placed in an oven adjusted to 80 to 85 ° C. for 10 hours to cure the cell-dispersed urethane composition and the light transmission region forming material, thereby forming a polishing region and a light transmission region. Thereafter, the light transmission region forming mold and the long mold were released to prepare a long polishing layer (thickness: about 2 mm) having a gap (1 mm) between the light transmission region and the polishing region. Next, the surface of the long polishing layer was buffed using a buffing machine (manufactured by Amitech) to adjust the thickness to 1.1 mm. Then, a long polishing pad was prepared by performing groove processing on the surface of the polishing region of the long polishing layer using a groove processing machine (manufactured by Toho Steel Co., Ltd.).

Schematic configuration diagram showing an example of a polishing apparatus used in CMP polishing Schematic which shows an example of the cross section of the long polishing pad of this invention Schematic which shows the example of the manufacturing process of the long polishing pad of this invention Schematic showing an example of the structure of a mold for forming a light transmission region Schematic showing a method of polishing a semiconductor wafer using a web-type polishing apparatus Schematic showing a method of polishing a semiconductor wafer using a linear polishing apparatus Schematic showing a method of polishing a semiconductor wafer using a reciprocating polishing apparatus

Explanation of symbols

1: Polishing pad 2: Polishing surface plate 3: Abrasive (slurry)
4: Material to be polished (semiconductor wafer)
5: Support base (polishing head)
6, 7: Rotating shaft 8: Long polishing pad 9: Polishing region 10: Light transmission region 11: Transparent support film 12: Cell-dispersed urethane composition 13: Long mold 14: Form frame 15 for light transmission region formation: Injection Hole 16: Injection wall 17: Light transmission region forming material 18a: Supply roll 18b: Collection roll 19: Roll

Claims (4)

A step of preparing a cell-dispersed urethane composition by a mechanical foaming method , placing a transparent support film on the bottom board, placing a long mold on the transparent support film, and clamping the bottom board and the long mold Performing the step of disposing the transparent support film in a long mold, disposing a mold for forming a light transmitting region having an injection hole and an injection wall at a predetermined position on the support film, and transmitting light into the injection hole. Discharging the region forming material and curing the light transmitting region forming material to form a light transmitting region; discharging the cell dispersed urethane composition onto the transparent support film outside the injection hole; A step of curing the composition to form a polishing region, and releasing the light transmission region forming mold and the long mold to form a long polishing layer having a gap between the light transmission region and the polishing region; Long-length laboratory including manufacturing process Method of manufacturing the pad. The method for manufacturing a long polishing pad according to claim 1, wherein the light transmission region is made of a thermosetting resin. The method for producing a long polishing pad according to claim 2, wherein the thermosetting resin is a polyurethane resin. The method for manufacturing a long polishing pad according to any one of claims 1 to 3, wherein the injection wall has a thickness of 1 mm or less.

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