JP4859682B2 - Solid-state imaging unit and solid-state imaging device using the same - Google Patents

Description

  The present invention relates to a solid-state imaging device used for a camera-equipped mobile phone device or the like.

  In the solid-state imaging device shown in FIG. 7B, an imaging element 1 such as a MOS type imaging element or a CCD imaging element is mounted on the electrode 4 of the cover glass 3 via the protruding electrode 2, and the cover glass 3 is attached to the wiring substrate 5. The electrode 4 is attached and pulled out on the wiring board 5 through the wiring pattern 4a. 6 is provided between the cover glass 3 and the image pickup device 1 to couple them together, and is sealed so that dust or the like does not enter the space 8 between the cover glass 3 and the image pickup surface 7 of the image pickup device 1. Yes.

A lens barrel 9 and an imaging lens 10 are arranged in front of the cover glass 3. Light incident from the imaging lens 10 passes through the cover glass 3 and forms an image on the imaging surface 7 of the imaging device 1.
A through-electrode 12 is formed on the silicon substrate 11 on which the imaging element 1 is constructed, and an electronic component 13 is mounted on the surface of the silicon substrate 11 opposite to the imaging surface 7. The electronic component 13 is connected to the circuit of the image sensor 1 through the through electrode 12. A solid-state imaging device in which the signal processing semiconductor chip 13 is mounted on the silicon substrate 11 of the imaging device 1 as an electronic component in this manner is described in Patent Document 1 and the like.

8B does not mount the electronic component 13 on the silicon substrate 11 of the image sensor 1, and attaches the flexible substrate 14 on which the necessary semiconductor chip 13 is mounted to the cover glass 3. In the solid-state imaging device shown in FIG. In addition, the circuit of the image sensor 1 and the semiconductor chip 13 are connected via the wiring pattern 4a. This type is described in Patent Document 2 and the like.
JP 2005-216970 A Japanese Patent Laid-Open No. 7-233104

  In the conventional solid-state imaging device shown in FIG. 7B, since the semiconductor chip 13 is mounted on the silicon substrate 11 of the imaging element 1, the size can be reduced as compared with FIG. 8B. In order to form 12, the silicon substrate 11 having a small thickness (generally having a thickness of about 0.3 mm) needs to be processed, and the yield is low.

  7B and 8B, the previous product 15 in which the cover glass 3 has already been assembled in the final assembly process as shown in FIGS. 7A and 8A. Since the image pickup device 1 is mounted and assembled to the image pickup device 1 so that dust or the like does not adhere to the image pickup surface 7 of the image pickup device 1 when the image pickup device 1 is manufactured and transported on another line. Strict management is required.

  An object of the present invention is to provide a solid-state imaging unit having a structure in which dust or the like does not directly adhere to an imaging surface of an imaging device even when the imaging device is manufactured on a separate line and transported to the final assembly process. .

  Another object of the present invention is to provide a solid-state imaging device capable of mounting electronic components on the back side of the imaging device without forming a through electrode by drilling a hole in the silicon substrate of the imaging device. .

The solid-state image pickup unit according to claim 1 of the present invention is mounted on the image pickup surface side of the image pickup element, an intermediate substrate made of a translucent material on which a through electrode connected to the electrode of the image pickup element is formed, and the image pickup A sealing material that seals between the element and the intermediate substrate, and a second electrode that is electrically connected to the through electrode on the surface of the intermediate substrate opposite to the mounting surface of the imaging element is formed on the inner bottom surface The relay block is provided with a first wiring pattern having one end connected to the second electrode and the other end extending to the opening of the relay block . The electrode of the image sensor is connected to an external circuit through a wiring pattern .

The solid-state image pickup unit according to claim 2 of the present invention is mounted on the image pickup surface side of the image pickup element, an intermediate substrate made of a translucent material on which a through electrode connected to the electrode of the image pickup element is formed, and the image pickup A sealing material that seals between the element and the intermediate substrate, and the electrode of the imaging element is connected to an external circuit via the through electrode of the intermediate substrate, and the intermediate substrate is The mounting position of the image sensor has a curved protrusion projecting toward the image sensor, and the image pickup surface of the image sensor is curved.

According to a third aspect of the present invention, the solid-state imaging device is mounted on the imaging surface side of the imaging element, the intermediate substrate made of a translucent material on which a through electrode connected to the electrode of the imaging element is formed, and the imaging A sealing material for sealing between the element and the intermediate substrate, and configured to connect the electrode of the imaging element to an external circuit through the through electrode of the intermediate substrate, and the intermediate substrate A relay block in which a second electrode that is electrically connected to the through electrode on the surface opposite to the mounting surface of the image sensor is formed on the inner bottom surface, and one end of the relay block is connected to the second electrode. A second wiring connected to the other end of the first wiring pattern by providing a first wiring pattern having the other end extending to the opening of the relay block and contacting the opening of the relay block Install the wiring board on which the pattern is formed. Characterized in that was.

A solid-state imaging device according to a fourth aspect of the present invention is the solid-state imaging device according to the third aspect , wherein the intermediate board has a curved protrusion in which the mounting position of the imaging element protrudes toward the imaging element. The imaging surface of the imaging element is curved.

According to this configuration, since the imaging surface of the solid-state imaging unit is sealed by the intermediate substrate and the sealing material, dust or the like does not directly adhere to the imaging surface of the imaging device.
Further, in the solid-state imaging device assembled using this solid-state imaging unit, a box-shaped relay block is interposed between the imaging element and the wiring board, and the first wiring pattern formed on the relay block is interposed. Thus, the wiring board and the image sensor can be electrically connected, and an electronic component can be mounted on the back side of the image sensor on the wiring board.

Hereinafter, each embodiment of the present invention will be described with reference to FIGS.
In addition, the same code | symbol is attached | subjected and demonstrated to what comprises the same effect | action.
(Embodiment 1)
1 to 4 show the first embodiment.

  FIG. 1 shows a solid-state imaging device using the solid-state imaging unit of the present invention, and FIG. 2 shows the solid-state imaging unit. The solid-state imaging device A is configured by combining the wiring board 5, the relay block 16, the solid-state imaging unit 17, the lens barrel 9, and the imaging lens 10. FIG. 3 shows an assembly process of the wiring board 5, the relay block 16, and the solid-state imaging unit 17.

  The solid-state image pickup unit 17 has an image pickup element 1B and an intermediate substrate 18 made of a light-transmitting material. In the imaging device 1B, an imaging surface 7 such as a MOS type imaging device or a CCD imaging device is constructed on a silicon substrate 11. Around the imaging surface 7 on the side of the imaging surface 7 of the silicon substrate 11, a protruding electrode 2 connected to the MOS type imaging device, the CCD imaging device or the like via a wiring pattern is formed. The intermediate substrate 18 has a land 19 formed on one surface corresponding to the protruding electrode 2 of the image sensor 1B, and a second protruding electrode 20 formed on the other surface. The land 19 and the second protruding electrode 20 are connected by a through electrode 21.

  As shown in FIG. 3A, the image pickup device 1B and the intermediate substrate 18 are used to heat the image pickup device 1B with respect to the intermediate substrate 18 in which a thermosetting resin 22 as a sealing material is attached on the land 19. As shown in FIGS. 3B and 4, the thermosetting resin 22 is thermoset in a state where the thermosetting resin 22 is pressed against the land 19 of the intermediate substrate 18 with the projection electrode 2 of the image sensor 1 </ b> B in contact with the land 19. The image pickup element 1B and the intermediate substrate 18 are configured to be sealed over the entire circumference of the image pickup surface 7. In the state shown in FIG. 3A, the thermosetting resin 22 is annularly attached around the imaging surface 7 of the imaging device 1B.

  In this way, by combining the image pickup device 1B and the intermediate substrate 18 to form the solid-state image pickup unit 17, even when the image pickup device 1B is manufactured on another line and transported to the final assembly process, By connecting the image pickup device 1B and the intermediate substrate 18 in the production line of the image pickup device 1B and transporting them to the final assembly step, direct adhesion of dust to the image pickup surface 7 of the image pickup device 1B can be eliminated.

  A window 24 is formed on the bottom surface 23 of the box-shaped relay block 16 as shown in FIG. A second land 25 is formed around the window 24 inside the bottom surface 23 so as to correspond to the second protruding electrode 20 of the intermediate substrate 18. The second land 25 is connected to one end of the first wiring pattern 26 formed in the relay block 16, and the other end of the first wiring pattern 26 is solder provided in the opening 27 of the relay block 16. It is connected to the attached land 28.

  The solid-state imaging unit 17 and the relay block 16 are provided with a thermosetting resin 29 on the second land 25 of the relay block 16 as shown in FIG. The solid-state imaging unit 17 is pressed by the heating tool 30 and the thermosetting resin 29 is thermoset, thereby being coupled as shown in FIG.

  Further, the opening 27 of the relay block 16 is brought into contact with the second wiring pattern 31 of the wiring board 5 as shown in FIG. 3D, and the soldering land 28 of the relay block 16 is shown in FIG. And the second wiring pattern 31 are connected by soldering 32. A signal processing semiconductor chip 13 is mounted on the wiring substrate 5 as an electronic component connected to the second wiring pattern 31.

  As described above, the image pickup device 1B and the semiconductor chip 33 can be connected to each other via the intermediate substrate 18 and the relay block 16, and the back side of the image pickup device 1B can be formed without making a hole in the silicon substrate 11 of the image pickup device 1B. The semiconductor chip 33 can be disposed on the solid-state imaging device as compared with the conventional case shown in FIG. 7 in which the through-electrode 12 is provided on the silicon substrate 11 and the semiconductor chip 13 is mounted. A size reduction can be realized. Further, by combining the image sensor 1B and the intermediate substrate 18, handling is easier than in the case of handling the image sensor 1B alone.

(Embodiment 2)
FIG. 5 shows the second embodiment.
The solid-state image pickup unit 17 of the mobile phone 1 has a flat image pickup device 1B coupled to a flat plate intermediate substrate 18, which is curved as an intermediate substrate 18 protruding toward the image pickup device 1B as shown in FIG. FIG. 5C shows the C-CC arrow in FIG. 5B by using the one having the shape of the protrusion 34 and mounting the imaging element 1B along the protrusion 34 by curving it. FIG.

(Embodiment 3)
FIG. 6 shows a third embodiment.
In the third embodiment, the component 35 is mounted on the side surface of the relay block 16. With such a configuration, an improvement in mounting density can be expected.

  In the above embodiment, the case where the thermosetting resin 22 is used for the bonding between the image pickup device 1B and the intermediate substrate 18 is described as an example. However, the ACF / ACP using an anisotropic conductive film or paste is used. (Anisotropic Conductive Film / Paste) A bonding method and a CF / NCP (Non Conductive Film / Paste) bonding method using a non-conductive film / paste can be similarly applied.

  The present invention can contribute to miniaturization of a mobile device such as a mobile phone device with a camera.

FIG. 3 is an enlarged cross-sectional view of the solid-state imaging device according to Embodiment 1 of the present invention. External perspective view of essential parts of the embodiment Sectional drawing which shows the manufacturing process of the embodiment Enlarged perspective view of the external appearance of the solid-state imaging unit of the embodiment Assembly process diagram and bottom view of solid-state imaging unit used in solid-state imaging device of embodiment 2 of the present invention External appearance perspective view of the principal part of the solid-state imaging device of Embodiment 3 of this invention Sectional view of a conventional solid-state imaging device Sectional view of another conventional solid-state imaging device

Explanation of symbols

A Solid-state imaging device 1B Imaging element 2 Projection electrode (electrode)
DESCRIPTION OF SYMBOLS 5 Wiring board 7 Image pick-up surface of image pick-up element 1B 9 Lens tube 10 Imaging lens 11 Silicon substrate 13 Semiconductor chip (electronic component)
16 relay block 17 solid-state imaging unit 18 intermediate substrate 19 land 20 second protruding electrode 21 through electrode 22 thermosetting resin (sealing material)
23 bottom 24 of relay block 16 window 25 second land (second electrode)
26 First wiring pattern 27 Opening portion 28 of relay block 16 Soldering land 31 Second wiring pattern 32 of wiring substrate 5 Soldering 34 Projection portion 35 of intermediate substrate 18 Component

Claims (4)

An intermediate substrate made of a translucent material, which is mounted on the imaging surface side of the imaging element and has a through electrode connected to the electrode of the imaging element;
A sealing material that seals between the imaging element and the intermediate substrate;
A relay block is provided in which a second electrode that is electrically connected to the through electrode on the surface opposite to the mounting surface of the imaging element of the intermediate substrate is formed on the inner bottom surface;
The relay block is provided with a first wiring pattern having one end connected to the second electrode and the other end extending to the opening of the relay block ;
A solid-state imaging unit configured to connect the electrode of the imaging device to an external circuit via the first wiring pattern of the intermediate substrate . An intermediate substrate made of a translucent material, which is mounted on the imaging surface side of the imaging element and has a through electrode connected to the electrode of the imaging element;
A sealing material that seals between the imaging element and the intermediate substrate;
While configured to connect the electrode of the imaging device to an external circuit through the through electrode of the intermediate substrate,
The solid-state imaging unit, wherein the intermediate substrate has a curved protrusion in which the mounting position of the imaging element protrudes toward the imaging element, and the imaging surface of the imaging element is curved. An intermediate substrate made of a translucent material , which is mounted on the imaging surface side of the imaging element and has a through electrode connected to the electrode of the imaging element ;
A sealing material for sealing between the image pickup device and the intermediate substrate is provided, and the electrode of the image pickup device is connected to an external circuit through the through electrode of the intermediate substrate, and
A relay block is provided in which a second electrode that is electrically connected to the through electrode on the surface opposite to the mounting surface of the imaging element of the intermediate substrate is formed on the inner bottom surface;
The relay block is provided with a first wiring pattern having one end connected to the second electrode and the other end extending to the opening of the relay block;
A solid-state imaging device provided with a wiring board on which a second wiring pattern is formed, which is in contact with the opening of the relay block and connected to the other end of the first wiring pattern. The intermediate substrate is
The mounting position of the image sensor has a curved protrusion projecting toward the image sensor, and the imaging surface of the image sensor is curved
The solid-state imaging device according to claim 3 .

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