JP4806484B2 - Stage apparatus, measuring method, and electron beam exposure apparatus - Google Patents

Description

[0001]
BACKGROUND OF THE INVENTION
The present invention relates to a stage apparatus, a measurement method, and an electron beam exposure apparatus. In particular, the present invention relates to a stage apparatus, a measuring method, and an electron beam exposure apparatus that can detect the attitude of the stage.
[0002]
[Prior art]
Conventionally, for example, in a stage apparatus of an electron beam exposure apparatus, detection of a foreign substance or the like in a stage moving area has been determined based on a result of actually exposing a wafer. That is, a pattern is exposed on the wafer, and foreign matter in the stage moving area is detected based on a difference from an expected exposure result.
[0003]
[Problems to be solved by the invention]
However, in the above-described method, it is necessary to actually perform exposure, resulting in waste. In addition, it is difficult to specify the position of the foreign matter. Furthermore, it was impossible to search for foreign objects on the stage placed in a vacuum.
[0004]
[Means for Solving the Problems]
In order to solve the above-described problem, in the first embodiment of the present invention, a stage apparatus having means for detecting position information of a stage that moves on a predetermined plane, a stage drive unit that moves the stage, and a stage And an angle calculation unit for calculating an angle formed by the predetermined plane.
[0005]
In the first embodiment, a determination unit may be further provided that determines whether or not the stage is moving levelly based on an angle change amount in a predetermined movement range of the stage. The angle calculation unit includes a laser beam irradiation unit that irradiates a plurality of laser beams including two laser beams having different positions in a direction substantially perpendicular to a predetermined plane on the stage. The angle may be calculated based on the reflected light of the plurality of laser beams reflected at.
[0006]
The angle calculation unit may calculate the optical path lengths of the plurality of laser beams based on the reflected lights of the plurality of laser beams, and calculate the angles based on the respective differences in the optical path lengths. The stage has a mirror substantially perpendicular to a predetermined plane, the laser beam irradiation unit irradiates the mirror with a plurality of laser beams, and the angle calculation unit applies the reflected light of the plurality of laser beams reflected by the mirror. The angle may be calculated based on this. In addition, the determination unit may include means for storing the position information of the stage, which is determined that the stage has not moved level.
[0007]
A second aspect of the present invention is a measuring method for measuring whether or not a stage moving on a predetermined plane is moving level, a stage driving stage for moving the stage, a stage and a predetermined plane, And an angle calculation step of detecting an angle formed by the measurement method.
[0008]
A third aspect of the present invention is an electron beam exposure apparatus that exposes a wafer with an electron beam, and includes an electron gun that irradiates the wafer with an electron beam, a deflector that deflects the electron beam, and a wafer. An electron beam exposure apparatus comprising: a stage that moves a predetermined plane; a stage driving unit that moves the stage; and an angle calculation unit that calculates an angle formed by the predetermined plane and the stage is provided.
[0009]
The above summary of the invention does not enumerate all the necessary features of the present invention, and sub-combinations of these feature groups can also be the invention.
[0010]
DETAILED DESCRIPTION OF THE INVENTION
The present invention will be described below through embodiments of the invention. However, the following embodiments do not limit the invention according to the scope of claims, and all combinations of features described in the embodiments are included. It is not necessarily essential for the solution of the invention.
[0011]
FIG. 1 shows an example of an electron beam exposure apparatus 100 that is an electron beam processing apparatus according to an embodiment of the present invention. The electron beam exposure apparatus 100 includes an exposure unit 150 for performing a predetermined exposure process on the wafer 64 with an electron beam, and a control system 140 for controlling the operation of each component of the exposure unit 150.
[0012]
The exposure unit 150 controls the inside of the housing 10 to irradiate the wafer 64 with an electron beam irradiation system 110 that irradiates a predetermined electron beam and the electron beam irradiated from the electron beam irradiation system 110. Electron optics including a control system 112 and a wafer projection system 114 that deflects an electron beam to a predetermined area of the wafer 64 placed on the stage plate 300 and adjusts the size of the pattern image transferred to the wafer 64. The system is provided.
[0013]
The electron beam irradiation system 110 includes a first electron lens 14 that determines a focal position of an electron beam by an electron gun 12 that generates an electron beam, and a slit portion 16 in which a rectangular opening (slit) that allows the electron beam to pass is formed. And have. Since the electron gun 12 takes a predetermined time to generate a stable electron beam, the electron gun 12 may always generate an electron beam during the exposure processing period. In FIG. 1, the optical axis of the electron beam when the electron beam irradiated from the electron beam irradiation system 110 is not deflected by the electron optical system is represented by a one-dot chain line A.
[0014]
The shot control system 112 includes a blanking electrode 18 and a round aperture unit 20. The round aperture unit 20 has a circular opening (round aperture). The blanking electrode 18 can turn on / off the electron beam in synchronization with high speed, and specifically has a function of deflecting the electron beam so as to strike the outside of the round aperture. That is, the blanking electrode 18 can prevent the electron beam from traveling downstream from the round aperture unit 20 with respect to the traveling direction of the electron beam. Since the electron gun 12 always irradiates an electron beam during the exposure processing period, the blanking electrode 18 changes the pattern transferred to the wafer 64, and further changes the area of the wafer 64 where the pattern is exposed. It is desirable to deflect the electron beam so that the electron beam does not travel downstream from the round aperture section 20.
[0015]
The wafer projection system 114 includes a second electron lens 22, a third electron lens 24, a main deflector 26, and a sub deflector 28. The second electron lens 22 adjusts the reduction ratio of the pattern image transferred to the wafer 64 with respect to the pattern formed by the slit portion 16. The third electron lens 24 functions as an objective lens. The main deflector 28 and the sub deflector 30 deflect the electron beam so that a predetermined region on the wafer 64 is irradiated with the electron beam. In this embodiment, the main deflector 28 is used to deflect an electron beam between subfields including a plurality of regions (shot regions) that can be irradiated with one shot of an electron beam. Is used for deflection between shot areas.
[0016]
In addition, the exposure unit 150 includes a stage device 300 having means for detecting movement information of the stage 310 that moves on a predetermined plane 316. The stage apparatus 300 includes a stage driving unit 312 that moves the stage 310 on a predetermined plane 316 and an angle calculation unit 314 that detects an angle formed between the stage and the predetermined plane 316. The wafer 64 whose pattern is to be exposed is placed on the stage 310.
[0017]
The control system 140 includes an overall control unit 130, a deflection control unit 132, an electron lens control unit 134, and a wafer stage control unit 136. The overall control unit 130 is a workstation, for example, and performs overall control of each control unit included in the individual control unit 120. The deflection control unit 132 controls the blanking electrode 18, the main deflector 56, and the sub deflector 58. The electron lens control unit 134 controls the current supplied to the first electron lens 14, the second electron lens 22, and the third electron lens 24. The wafer stage control unit 136 moves the stage 310 to a predetermined position by the stage driving unit 312 of the stage apparatus 300.
[0018]
An operation of the electron beam exposure apparatus 100 according to the present embodiment will be described. On the stage 310, a wafer 64 to be exposed is placed. The wafer stage control unit 136 moves the stage 310 by the stage driving unit 312 of the stage apparatus 300 so that the area of the wafer 64 to be exposed is positioned in the vicinity of the optical axis A. Further, since the electron gun 12 always irradiates the electron beam during the exposure processing period, the deflection control unit 132 is configured so that the electron beam that has passed through the opening of the slit portion 16 is not irradiated onto the wafer 64 before the start of exposure. The blanking electrode 18 is controlled.
[0019]
After the shot control system 112 and the wafer projection system 114 are adjusted, the deflection control unit 132 stops the deflection of the electron beam by the blanking electrode 18. As a result, the electron beam is irradiated onto the wafer 64 as shown below. The electron gun 12 generates an electron beam, and the first electron lens 14 adjusts the focal position of the electron beam to irradiate the slit portion 16. The electron beam that has passed through the opening of the slit portion 16 has a rectangular cross-sectional shape.
[0020]
The electron beam that has passed through the slit portion 16 passes through the round aperture included in the round aperture portion 20, and the reduction rate of the pattern image is adjusted by the second electron lens 22. Then, the electron beam is deflected by the main deflector 26 and the sub deflector 30 so as to irradiate a predetermined shot area on the wafer 64. In the present embodiment, the main deflector 26 deflects the electron beam between subfields including a plurality of shot regions, and the subdeflector 28 deflects the electron beam between shot regions in the subfield. The electron beam deflected to a predetermined shot area is adjusted by the third electron lens 24 and irradiated onto the wafer 64.
[0021]
After a predetermined exposure time has elapsed, the deflection control unit 132 controls the blanking electrode 18 to deflect the electron beam so that the electron beam does not irradiate the wafer 64. By the above process, a pattern is exposed to a predetermined shot area on the wafer 64. In order to expose the pattern to the next shot area, the sub deflector 28 adjusts the electric field so that the pattern image is exposed to the next shot area. Thereafter, the pattern is exposed to the shot area in the same manner as described above. After exposing the pattern to all of the shot areas to be exposed in the subfield, the main deflector 26 adjusts the magnetic field so that the pattern can be exposed in the next subfield. The electron beam exposure apparatus 100 can expose a desired circuit pattern onto the wafer 64 by repeatedly executing this exposure process.
[0022]
The electron beam exposure apparatus 100 which is an electron beam processing apparatus according to the present invention may be an electron beam exposure apparatus using a variable rectangle, or an electron beam exposure using a blanking aperture array (BAA) device. It may be a device.
[0023]
FIG. 2 shows an example of the configuration of the stage apparatus 300. The stage apparatus 300 includes a stage drive unit 312, a stage 310, an angle calculation unit 314, a determination unit 322, and a storage unit 324. The stage driving unit 312 receives a control signal from the wafer stage control unit 136 of the control system 140 and moves the stage 310. The angle calculation unit 314 calculates an angle θ ₁ formed by the stage 310 and a plane 316 (see FIG. 1) that is a predetermined plane to be driven by the stage. The determination unit 322 determines whether or not the stage is moving levelly based on the calculated angle θ ₁ . The memory | storage part 324 memorize | stores the place where the stage has not moved to the level determined by the determination part 322.
[0024]
For example, the stage 310 may have wheels, and the stage driving unit 312 may be a motor that drives the wheels. The angle calculation unit 314 is, for example, a laser interferometer, and has a laser beam irradiation unit that irradiates a plurality of laser beams including two laser beams having different positions in a direction substantially perpendicular to the predetermined plane 316 on the stage 310. However, the angle θ ₁ may be calculated based on the reflected light of the plurality of laser beams reflected on the stage 310. In this case, the angle calculation unit 314 calculates the optical path lengths of the plurality of laser beams based on the reflected lights of the plurality of laser beams, and the angle θ based on the difference between the optical path lengths of the reflected lights of the plurality of laser beams. ₁ may be calculated. The determination unit 322 determines whether or not the stage 310 is moving levelly based on the amount of change in the angle θ ₁ within a predetermined movement range of the stage 310.
[0025]
FIG. 3 shows an example of the stage apparatus 300. The stage apparatus 300 has the same or similar function and configuration as the stage apparatus 300 described with reference to FIG. The stage 300 has a mirror 72 on its side surface, and the angle detection unit 314 irradiates the stage 310 with two laser beams 318a and 318b that are different from each other in a direction substantially perpendicular to the predetermined plane 316 (not shown). )). Further, the angle detection unit 314 calculates the angle θ ₁ based on the optical path length difference between the reflected lights 320 a and 320 b of the two laser beams reflected by the mirror 72 of the stage 310.
[0026]
In this example, the laser light irradiation unit irradiates the side surface of the stage 310 with laser light. The laser beam irradiated on the stage 310 is reflected by a mirror 72 provided on the side surface of the stage 310. The angle calculation unit 314 calculates the angle θ ₁ formed by the predetermined plane 316 and the stage 310 based on the optical path length difference between the reflected light 320a and the reflected light 320b. The angle calculation unit 314 may calculate the optical path length of each reflected light based on, for example, the phase and intensity of the reflected light 320a and 320b.
[0027]
As shown in FIG. 3A, when the side surface of the stage irradiated with the laser beam and the predetermined plane 316 are perpendicular, the optical path lengths of the two laser beams irradiated by the laser beam irradiation unit are the same. That is, the angle calculation unit 314 calculates θ ₁ = 0. When the stage driving unit 312 moves the stage 310 and the stage 310 is moved, for example, when tilted due to foreign matter or scratches existing on the moving surface of the stage 310, the optical path length of the laser light reflected by the mirror 72 changes. . The angle calculation unit 314 calculates the tilt of the stage 310 based on the changed optical path length of the laser beam, that is, the angle θ ₁ formed by the stage 310 and the predetermined plane 316.
[0028]
FIG. 4 is an enlarged view of the side surface of the stage 310. An angle formed by the stage 310 and a predetermined plane 316 is defined as θ ₁ . Laser light 318 a and laser light 318 b irradiated from the angle calculation unit 314 are reflected by a mirror 72 provided on the side surface of the stage 310. Since the side surface of the stage 310 has substantially the same inclination as θ ₁ , a difference occurs in the optical path length until the laser beam 318 a and the reflected light 318 b reach the side surface of the stage 310. Further, there is a difference in the optical path length until the reflected light 320a and the laser light 320b reflected on the side surface of the stage 310 reach the angle detection unit 314. The angle calculation unit 314 calculates θ ₁ based on this optical path length difference.
[0029]
It is preferable that the angle calculation unit 314 calculates θ _{1 based} on the phase difference and the intensity difference between the reflected light 320a and the reflected light 320b received. In addition, the angle calculation unit 314 may calculate the angle θ ₁ based on the distances L ₁ and L ₂ between the irradiation positions of the laser light 318a and the laser light 318b and the light receiving positions of the reflected light 320a and the reflected light 320b. . In this example, the angle calculation unit 314 calculates the tilt θ _{1 of the} stage 310 based on the reflected light of the two laser beams. In another example, the stage 310 may be irradiated with three or more laser beams, and the tilt θ _{1 of the} stage 310 may be calculated based on the reflected light from the laser beams. The angle calculation unit 314 includes a laser beam irradiation unit that irradiates a plurality of laser beams including two laser beams irradiated at different positions in a direction substantially perpendicular to a predetermined plane of the mirror 72, and the mirror 72 of the stage 310. The angle θ ₁ may be calculated based on the reflected light of the plurality of laser beams reflected in step.
[0030]
Further, the angle detection unit 314 may detect the tilt of the stage 310 by irradiating a plurality of different side surfaces of the stage 310 with laser light. In this case, the stage 310 preferably has a mirror on each of a plurality of side surfaces irradiated with the laser light. In addition, the angle detection unit 314 preferably detects the tilt of the stage 310 by irradiating a plurality of side surfaces including two adjacent side surfaces with laser light. The stage 310 has a mirror substantially perpendicular to the predetermined plane 316, the laser beam irradiation unit of the angle calculation unit 314 irradiates the mirror with a plurality of laser beams, and the angle calculation unit 314 reflects on the mirror. It is preferable to calculate an angle formed by the stage 310 and the predetermined plane 316 based on the reflected light of a plurality of laser beams. That is, the stage 310 has a mirror on the side surface irradiated with the laser light, and the angle calculation unit 314 calculates the angle based on the reflected light from the mirror. In this case, the mirror has a reflecting surface on a surface substantially perpendicular to the predetermined plane 316.
[0031]
FIG. 5 shows an example of the angle between the stage 310 and the predetermined plane 316 calculated by the angle calculation unit 314. In the graph shown in FIG. 5A, the horizontal axis indicates the moving distance of the stage, and the vertical axis indicates the angle formed by the stage 310 and the predetermined plane 316 detected by the angle calculation unit 314. In this example, an angle formed between the side surface of the stage 310 or the mirror 72 irradiated with the laser light and the predetermined plane 316 is not constant with respect to the direction in which the stage 310 moves. For example, as the stage 310 moves, the angle between the side surface of the stage 310 or the mirror 72 and the predetermined plane 316 increases at a substantially constant rate. For example, the stage 310 shown in FIG. 5B moves in the X direction, and the side surface of the stage 310 that reflects the laser light emitted from the angle calculation unit 314 (b) or the tilt of the mirror 72b is irradiated with the laser light. If the position differs, the angle calculation unit 314 (b) detects a different angle according to the inclination of the side surface or the mirror 72b as the stage 310 moves. As a result, a change as shown in FIG.
[0032]
The distances that the stage 310 has moved in the X direction are X ₀ , X ₁ , X ₂ , and X _3, and the angles calculated by the angle calculation unit 314 (b) at that time are θ ₀ , θ ₁ , θ ₂ , and θ ₃ , respectively. To do. X ₀ , X ₁ , X ₂ , and X ₃ are equidistant intervals. Each time the stage drive unit 312 moves the stage 310 by an equal distance, the angle change amounts θ ₁ −θ ₀ , θ ₂ −θ ₁ , θ ₃ −θ ₂ calculated by the angle calculation unit 314 (b) are calculated, respectively. Is in a predetermined range. If it is not within the predetermined range, it is determined that the stage 314 (b) has not moved levelly. The determination unit 322 (see FIG. 2) determines whether or not the stage 310 is moving uniformly based on the amount of change in angle within a predetermined movement range of the stage 310. In this example, the determination unit determines that the location you X ₂ moves, the stage 310 is not moved to level. That it can be determined that the stage 310 is in a location that X ₂ moves, there is foreign matter or scratches.
[0033]
Further, when the stage 310 moves in the X direction, it is determined whether or not the stage 310 is moved levelly based on the amount of change in angle calculated by the angle calculation unit 314 (a) and the angle calculation unit 314 (b). You may judge. Also, when the stage 310 moves in the Y direction, it is determined whether or not the stage 310 is moving in the same manner as in the case of moving in the X direction described above. Further, as shown in FIG. 5B, by irradiating a plurality of side surfaces of the stage 310 with laser light and calculating the tilt of the stage 310, it is possible to determine at which position of the stage 310 foreign matter, scratches, etc. exist. It becomes possible to detect. Further, the size of the foreign matter that the stage 310 has stepped on is determined based on the inclination of the stage 310 calculated by the angle calculation unit 314 (a) and the angle calculation unit 314 (b) by irradiating a plurality of side surfaces of the stage 310 with laser light. Can be calculated. In addition, the stage apparatus 300 may include means for storing position information of the stage 310 that the determination unit determines that the stage 310 has not moved levelly.
[0034]
The control system 140 (see FIG. 1) may adjust the position where the electron beam irradiates the wafer based on the position information stored in the storage unit 322. That is, the control system 140 may control the deflection of the electron beam, the exposure position of the electron beam, and the position of the stage 310 based on the position information stored in the storage unit 322.
[0035]
According to the electron beam exposure apparatus 100 and the stage apparatus 300 described above, it is possible to easily detect a place where the stage 310 does not move levelly. In addition, by storing the location where the stage 310 is not moved level, the exposure location of the electron beam can be corrected when the wafer is exposed. Further, by storing the place where the stage 310 does not move levelly, it is possible to identify and eliminate the cause of the stage 310 not moving levelly. For example, it is possible to identify and remove a foreign object existing in an area where the stage 310 moves. Moreover, in this example, the stage 310 has a wheel, and the predetermined surface was moved by driving the wheel. In another example, the stage 310 has wheels, the wheels are arranged so as to sandwich a guide provided on a plane on which the stage 310 should move, and the stage is driven along the guide by driving the wheel. 310 may be moved. In this case, the angle detection unit 314 detects the distance to the side surface of the stage 310 or the mirror 72 based on the reflected light of the laser light, and determines whether or not the stage 310 has moved levelly based on the detected distance. You can do it. That is, foreign matter or scratches on the guide may be detected based on the reflected light.
[0036]
FIG. 6 is a flowchart for explaining the measurement method according to the present invention. The measurement method according to the present invention measures whether or not a stage moving on a predetermined plane is moving level. The measurement method includes a stage driving stage for moving the stage, an angle calculation stage for calculating an angle between the stage and a predetermined plane, a determination stage for determining whether or not the stage is moving level, and a determination stage And a storage step for storing a result of the determination.
[0037]
In the stage driving stage, the stage is moved to a predetermined position (S100). In the stage driving stage, the stage may be moved using the stage driving unit 312 described with reference to FIGS. In the stage driving stage, the stage may be moved based on a predetermined moving distance. Next, in the angle calculation step, an angle formed between the stage and a predetermined plane is calculated (S102). In the angle calculation step, the side surface of the stage may be irradiated with laser light, and the angle between the stage and a predetermined plane may be calculated based on the reflected light from the side surface of the stage by the laser light. In the angle calculation step, the angle formed between the stage and a predetermined plane may be calculated using the angle detection unit 314 described with reference to FIGS. In the angle calculation step, an angle formed between the stage and a predetermined plane may be calculated for each predetermined movement distance in which the stage driving step moves the stage. Next, in the determination step, it is determined whether or not the stage is moving levelly based on the angle calculated in the angle calculation step (S104). In the determination step, the determination unit 322 described in relation to FIGS. 2 to 5 may be used to determine whether or not the stage is moving level. In the determination step, it may be determined whether or not the stage is moving evenly for each predetermined movement distance in which the stage driving step moves the stage. Next, the storage step stores the determination result determined by the determination step (S106). The storage stage may store the location determined by the determination stage that the stage has not moved level. In the storage step, the determination result may be stored using the storage unit 324 described with reference to FIGS. Next, when there is still a place where the stage is to be moved, the process returns to the stage driving stage (S100), and when there is no place where the stage is to be moved, the measurement method is terminated.
[0038]
According to the measurement method described above, it is possible to easily detect a place where the stage does not move levelly. Further, by storing the place where the stage is not moving levelly, for example, the exposure position of the electron beam can be corrected in the stage of the exposure apparatus. Further, since the location where the stage does not move to the level is stored, the cause of the stage not moving to the level can be identified and corrected.
[0039]
As mentioned above, although this invention was demonstrated using embodiment, the technical scope of this invention is not limited to the range as described in the said embodiment. It will be apparent to those skilled in the art that various modifications or improvements can be added to the above embodiment. It is apparent from the description of the scope of claims that embodiments with such changes or improvements can be included in the technical scope of the present invention.
[0040]
【The invention's effect】
As is apparent from the above description, according to the present invention, it is possible to easily detect the angle formed between the stage and a predetermined plane. Further, by detecting the angle formed between the stage and a predetermined plane, it is possible to determine whether or not the stage is moving levelly and to determine the presence of a foreign substance or the like.
[Brief description of the drawings]
FIG. 1 shows an example of an electron beam exposure apparatus 100 that is an electron beam processing apparatus according to an embodiment of the present invention.
FIG. 2 shows an exemplary configuration of a stage apparatus 300.
FIG. 3 shows an example of a stage apparatus 300.
4 is an enlarged view of a side surface of the stage 310. FIG.
FIG. 5 shows an example of an angle between a stage 310 and a predetermined plane 316 calculated by the angle calculation unit 314.
FIG. 6 is a flowchart illustrating a measurement method according to the present invention.
[Explanation of symbols]
DESCRIPTION OF SYMBOLS 10 ... Case, 12 ... Electron gun 14 ... 1st electron lens, 16 ... Slit part 18 ... Blanking electrode, 20 ... Round aperture part 22 ... 2nd electron Lens ... 24 ... 3rd electron lens 28 ... Main deflector, 64 ... Wafer 72 ... Mirror, 100 ... Electron beam exposure device 110 ... Electron beam irradiation system, 112 ... Shot control system 114 ... wafer projection system, 120 ... individual control unit 130 ... overall control unit, 132 ... deflection control unit 134 ... electron lens control unit, 136 ... wafer stage control Unit 140 ... control system, 150 ... exposure system 300 ... stage device, 310 ... stage 312 ... stage drive unit, 314 ... angle calculation unit 316 ... predetermined plane, 322 ... Determination unit 324 ... storage unit

Claims (8)

A stage drive unit that moves the stage along a predetermined plane ;
The stage is irradiated with a plurality of laser beams including two laser beams having different positions in a direction substantially perpendicular to the predetermined plane along a first direction parallel to the predetermined plane. An angle calculator that calculates a first angle between the stage and the predetermined plane based on reflected light of the plurality of laser beams reflected by the stage;
Based on the amount of change in the first angle while the stage moves in a predetermined movement range along the first direction, the stage in the predetermined movement range does not move evenly. A stage apparatus comprising: a determination unit that determines a first movement range indicating the movement range . The angle calculation unit is configured to cause the stage to receive a plurality of laser beams including two laser beams having different positions in a direction substantially perpendicular to the predetermined plane, parallel to the predetermined plane, A second laser light irradiation unit that irradiates along a second direction perpendicular to the first direction, based on the reflected light reflected by the stage with the laser light irradiated by the second laser light irradiation unit; Calculating a second angle between the stage and the predetermined plane;
The determination unit includes the stage within the predetermined movement range based on an amount of change in the second angle while the stage moves in a predetermined movement range along the second direction. Determining a second movement range indicating a movement range in which the movement does not move in a level manner, and determining a size of a foreign object stepped on by the stage based on the first movement range and the second movement range.
The stage apparatus according to claim 1. The angle calculation unit calculates optical path lengths of the plurality of laser beams based on reflected light of the plurality of laser beams irradiated from the first laser beam irradiation unit, and based on respective differences of the optical path lengths the stage apparatus according to 請 Motomeko 1 or 2 calculate the first angle. The stage has a mirror substantially perpendicular to the predetermined plane;
The first laser beam irradiation unit irradiates the mirror with the plurality of laser beams,
The angle calculation unit, a stage apparatus according to any one of 3 from 請 Motomeko 1 you calculate the first angle based on the reflected light of the plurality of laser light reflected in the mirror. The stage apparatus according to any one of 4 請 Motomeko 1 Ru comprising means for storing positional information of the stage showing a first movement range in which the determination unit has determined. A stage driving stage for moving the stage along a predetermined plane ;
Irradiating the stage with a plurality of laser beams including two laser beams having different positions in a direction substantially perpendicular to the predetermined plane along a first direction parallel to the predetermined plane; An angle calculating step of calculating an angle formed between the stage and the predetermined plane based on reflected light of the plurality of laser beams reflected by the stage;
The predetermined range of movement based on the amount of change in the angle between the stage and the predetermined plane while the stage moves in the predetermined range of movement along the first direction. the stage is measurement how and a determining stage moving range which does not move to the level in the inner. An electron beam exposure apparatus for exposing a wafer with an electron beam,
An electron gun for irradiating the wafer with the electron beam;
A deflector for deflecting the electron beam;
A stage for placing the wafer and moving along a predetermined plane;
A stage drive for moving the stage;
The stage is irradiated with a plurality of laser beams including two laser beams having different positions in a direction substantially perpendicular to the predetermined plane along a first direction parallel to the predetermined plane. An angle calculation unit that has one laser beam irradiation unit and calculates an angle formed by the predetermined plane and the stage based on reflected light of the plurality of laser beams reflected by the stage;
The predetermined range of movement based on the amount of change in the angle between the stage and the predetermined plane while the stage moves in the predetermined range of movement along the first direction. the stage determining unit and <br/> Ru electron beam exposure apparatus comprising a movement range not move to the level in the inner. A storage unit for storing position information of the stage indicating a moving range in which the stage determined by the determination unit does not move levelly;
A control unit that corrects an exposure position of the electron beam by controlling at least one of the deflector and the stage driving unit based on the position information stored in the storage unit;
An electron beam exposure apparatus according to claim 7.

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