JP4769048B2 - Substrate processing method - Google Patents

Description

  The present invention relates to a technique for cutting the upper surface of a semiconductor wafer used as a substrate of an electronic device or other thin plate-like substrate having, for example, a resin layer or a metal layer, and in particular, from a material such as metal or resin on the upper surface. The present invention relates to a technique for cutting a laminated portion on a substrate on which the laminated portion is formed.

  A semiconductor chip on which an electronic circuit such as an IC or LSI is formed on the upper surface has a rectangular rectangular area partitioned by a cut line called street on the upper surface of a disk-shaped semiconductor wafer, and the electronic circuit is formed in these rectangular areas. Thereafter, the semiconductor wafer is manufactured through a process of dividing along a street.

  Some semiconductor wafers have a plurality of protruding metals formed on the upper surface or a resin film formed as an insulating means. Some semiconductor wafers have both of these metals and the resin film on the upper surface. For example, as a metal, there is a metal called a bump having a height of about 15 to 100 μm that serves as a wiring that is electrically connected to a semiconductor element and a connection terminal for mounting on a mounting substrate. In a semiconductor wafer having a plurality of protruding bumps formed on the upper surface, it is necessary for the height to be uniform in order to make all the bumps abut against the terminals of the substrate for connection. For that purpose, as described in Patent Documents 1 and 2, for example, a method of scraping the tip of the bump by cutting can be employed.

Japanese Patent Application Laid-Open No. 2000-173954 JP 2004-319697 A

  In the above document, a method of scraping off a bump or a resin in which the bump is buried with a cutting blade such as a carbide tool is described as an invention. In this method, the metal (bump) and the resin are cut to make the heights uniform. By the way, in such a semiconductor wafer, it is required not only to make the height uniform, but also to make the height constant without variation to a predetermined value. Therefore, when cutting metal or resin such as bumps formed on the upper surface of the wafer as in the method described in the above document, after the bump or resin is cut to some extent by a processing apparatus, the wafer thickness or bump or A method is adopted in which the height of the resin is measured with a measuring device, and the amount of machining obtained based on the measured value is cut again.

  However, in such a method, since it is necessary to repeatedly transfer and set the wafer alternately between the processing apparatus and the height measuring device, it takes time and there is room for improvement in terms of productivity.

Therefore, in the present invention, when cutting a laminated portion such as a metal or a resin formed on the upper surface of a substrate such as the above semiconductor wafer, the cutting process required for making the thickness of the laminated portion or the entire substrate is simplified is produced. and its object is to provide a process how the board improvement in efficiency is achieved.

  The substrate processing method of the present invention includes a chuck table for holding a substrate, a processing means having a cutting blade for cutting the upper surface of the substrate held by the chuck table, and the chuck table is cut by the substrate attaching / detaching region and the processing means. A processing apparatus comprising: a chuck table moving means positioned in a processing area; and a height position detecting means for detecting a position of at least an upper surface of the substrate that is disposed in the substrate attaching / detaching area and is held by the chuck table. A substrate processing method for cutting a laminated portion of a substrate, comprising a substrate portion and a laminated portion having a predetermined thickness on the upper surface of the substrate portion, the substrate being held on a chuck table, and a height position detecting means And a chuck table for detecting the position of the upper surface of the laminated portion of the substrate, and before or after the step of detecting the upper surface position of the laminated portion of the substrate. A chuck table top surface position detecting step for detecting a top surface position, a substrate portion thickness recognizing step for recognizing the thickness of the substrate portion of the substrate, and a processing region positioning step for moving the chuck table to position the substrate in the processing region; The thickness of the substrate is calculated based on the position information obtained by the upper surface position detecting step of the laminated portion of the substrate and the upper surface position detecting step of the chuck table, and the cutting blade of the processing means is positioned on the upper surface of the laminated portion of the substrate. And a laminated portion cutting step for cutting the substrate until the thickness of the substrate reaches a predetermined value within a range not reaching the thickness of the substrate portion obtained in the portion thickness recognition step.

  The present invention obtains the total thickness of the entire substrate including the substrate portion and the laminated portion from the upper surface position information of the laminated portion of the substrate and the upper surface position information of the chuck table, and processing means until the total thickness reaches a predetermined value. This is a processing method based on the total thickness control in which the cutting blade is fed to the substrate to cut the laminated portion, and is used when the total thickness of the substrate is processed to be constant. Since the thickness of the substrate portion is recognized in advance and cutting feeding is regulated within a range not reaching the thickness of the substrate portion, there is no possibility of cutting the substrate portion, and only the laminated portion can be cut accurately. As a means for recognizing the thickness of the substrate part, there is a means for measuring the surface of the substrate part by the height position detecting means of the present invention. In addition to this, the substrate part was obtained by cutting the substrate part into a predetermined thickness in advance. In some cases, the thickness is recognized in advance.

  Further, the substrate processing method of the present invention includes a chuck table for holding the substrate, a processing means having a cutting blade for cutting the upper surface of the substrate held by the chuck table, and processing the chuck table with the substrate attaching / detaching region. A processing apparatus comprising: a chuck table moving means positioned in a processing area to be cut by the means; and a height position detecting means disposed in the substrate attaching / detaching area and detecting at least the position of the upper surface of the substrate held by the chuck table is used. The substrate is composed of a substrate portion and a laminated portion having a predetermined thickness on the upper surface of the substrate portion, and is a substrate processing method for cutting the laminated portion of the substrate. The position detection means detects the position of the upper surface of the laminated portion of the substrate, and the position detection means holds the substrate on the chuck table, The substrate portion upper surface position detecting step of detecting the upper surface of the substrate portion of the substrate, the processing region positioning step of moving the chuck table to position the substrate in the processing region, the substrate stack portion upper surface position detecting step, and the substrate The thickness of the laminated part is calculated based on the position information obtained by the substrate part upper surface position detecting step, and the laminated part is cut to form a predetermined thickness by cutting the upper surface of the laminated part with a processing means. And a process.

  According to the present invention, the thickness of the laminated portion on the substrate portion is obtained from the information on the upper surface position of the laminated portion of the substrate and the position information on the upper surface of the substrate portion. This is a processing method in which the laminated portion is cut by feeding into the laminated portion and the laminated portion is controlled in thickness. This method is employed when the thickness of the laminated portion is processed to be constant even if the thickness of the substrate portion varies.

  Further, the substrate processing method of the present invention includes a chuck table for holding the substrate, a processing means having a cutting blade for cutting the upper surface of the substrate held by the chuck table, a chuck attachment / detachment region and a processing means. Using a processing apparatus provided with a chuck table moving means positioned in a processing area to be cut with, and a height position detecting means for detecting the position of at least the upper surface of the substrate disposed in the substrate attaching / detaching area, The substrate is composed of a substrate portion and a laminated portion having a predetermined thickness on the upper surface of the substrate portion, and is a substrate processing method for cutting the laminated portion of the substrate. A substrate stack portion upper surface position detection step of detecting the position of the upper surface of the substrate stack portion by a position detection means, a substrate portion thickness recognition step of recognizing the thickness of the substrate portion of the substrate, and The cutting blade of the processing means is positioned on the upper surface of the laminated portion of the substrate based on the positional information obtained by the processing region positioning step of moving the back table to position the substrate in the processing region and the upper surface position detecting step of the laminated portion of the substrate. And a substrate laminate portion cutting step of cutting a predetermined amount of the upper surface of the substrate laminate portion within a range not reaching the thickness of the substrate portion obtained in the substrate portion thickness recognition step.

  According to the present invention, the cutting amount of the laminated portion is obtained from the laminated portion upper surface position information of the substrate obtained before processing and the laminated portion upper surface position information during cutting, and until the cutting amount reaches a predetermined value, This is a processing method based on a cutting amount control in which a cutting blade is fed into a substrate to cut a laminated portion. This method is adopted when processing the cut amount of the laminated portion to be constant. Even in this method, since the thickness of the substrate portion is recognized in advance and cutting feeding is regulated within a range not reaching the thickness of the substrate portion, there is no possibility of cutting the substrate portion, and only the laminated portion is cut appropriately. be able to.

  In each of the processing methods according to the present invention, since the thickness of the substrate is detected while the substrate is held on the chuck table, the detection and the cutting of the laminated portion can be performed in series without stagnation. Therefore, the cutting process is simplified and the production efficiency is improved.

  According to the present invention, cutting the laminated portion while measuring the thickness of the entire substrate and the thickness of the laminated portion is performed while the substrate is held on the chuck table, so that the thickness of the laminated portion or the entire substrate is constant. Thus, the cutting process required for the production is simplified and the production efficiency is improved.

Hereinafter, an embodiment of the present invention will be described with reference to the drawings.
[1] Semiconductor wafer (substrate)
Reference numeral 1 in FIG. 1 indicates a disk-shaped semiconductor wafer (hereinafter abbreviated as a wafer) on which cutting is performed in one embodiment, and FIG. 2 shows a cross section of the wafer. As shown in FIG. 2, the wafer 1 has a substrate portion 1A, and a plurality of semiconductor chips 2 are formed in a lattice pattern on the surface of the substrate portion 1A as shown in FIG. On the surface of each semiconductor chip 2, as shown in the enlarged portion of FIG. 1 and FIG. 2, a plurality of bumps 3 having a fine pin shape are formed protrudingly. These bumps 3 are bonded to electrodes of an electronic circuit formed on the semiconductor chip 2. Further, as shown in FIG. 2, a resin film 4 covering the bumps 3 is formed on the surface of the wafer 1. The resin film 4 is formed leaving a slight outer peripheral portion of the surface of the wafer 1. In the following description, both the bump 3 and the resin film 4 may be collectively referred to as a laminated portion 5.

[2] Configuration of processing apparatus The bumps 3 formed on the surface of the wafer 1 are scraped off together with the resin film 4 so that the height is uniform, and the resin film 4 is processed flat accordingly. Figure 3 illustrates a preferred machining apparatus 10 in its processing. Reference numeral 11 in FIG. 3 is a base mainly composed of a rectangular parallelepiped portion having a horizontal upper surface. The base 11 has a wall portion 12 standing perpendicular to the upper surface at one end portion in the longitudinal direction. In FIG. 3, the longitudinal direction, the width direction, and the vertical direction of the base 11 are indicated by arrows Y, X, and Z, respectively.

The upper surface of the base 11 has a processing area 11A from the substantially central portion in the longitudinal direction to the wall 12 side, and the opposite side supplies the unprocessed wafer 1 to the processing area 11A and collects the processed wafer 1. Supply / recovery area 11B.
Hereinafter, the various mechanisms provided in the processing apparatus 10 will be described separately with reference to FIG. 3, divided into those provided in the processing area 11A and those provided in the supply / recovery area 11B.

(A) Mechanism of machining area A rectangular recess 13 is formed in the machining area 11A, and a disk-like chuck table 15 moves in the Y direction via a moving table 14 in the recess 13. It is provided freely. The moving table 14 is slidably attached to a guide rail that extends in the Y direction and is arranged in the base 11, and is reciprocated in the same direction by an appropriate drive mechanism (not shown).

  One end of bellows-like covers 16 and 17 is attached to both ends of the moving table 14 in the moving direction, and the other ends of the covers 16 and 17 are opposed to the inner surface of the wall portion 12 and the wall portion 12. It is attached to the inner wall surface of the recess 13 to be respectively. These covers 16 and 17 cover the moving path of the moving table 14 and prevent cutting chips and the like from falling on the moving path, and expand and contract as the moving table 14 moves.

  The chuck table 15 is fixed on the moving table 14 so that the upper surface, which is the suction surface of the wafer 1, is horizontal. The wafer 1 is attracted and held on the upper surface of the chuck table 15 by a vacuum chuck method with the surface on which the laminated portion 5 is formed facing upward. The chuck table 15 moves to the wall 12 side and is positioned in a predetermined processing area. A processing unit (processing means) 20 is disposed above the processing area. The processing unit 20 is attached to the wall portion 12 via a moving plate 32 and a guide rail 31 so as to be movable up and down, and is moved up and down by a feed mechanism 30.

  The processing unit 20 includes a cylindrical housing 22 whose axial direction extends in the Z direction, a rotary shaft 23 that is coaxially and rotatably supported by the housing 22, and a servo motor 24 that rotationally drives the rotary shaft 23. A disc-shaped wheel mount 25 coaxially fixed to the lower end of the rotary shaft 23, and the housing 22 is fixed to the moving plate 32 via a block 34. The wheel mount 25 is rotated by the servo motor 24 in the direction of the arrow in FIG. 3 (described on the upper surface of the wheel mount 25). As shown in FIG. 4, a tool (cutting blade) 26 having a blade portion made of diamond or the like is detachably attached to the lower surface of the wheel mount 25, and the workpiece is cut by the tool 26. The cutting plane formed by the rotation trajectory of the cutting tool 26 that rotates together with the wheel mount 25 is set to be horizontal or nearly horizontal. In the processing apparatus 10, the distance between the cutting edge of the cutting tool 26 and the chuck table 15 is always detected, and the feed mechanism 30 moves up and down based on the detected information, so that the surface of the wafer 1 is appropriately cut. .

  The chuck table 15 is moved between a machining area directly below the machining unit 20 and a wafer attaching / detaching area that is separated from the wall 12 by a predetermined distance. The chuck table 15 and the cutting unit 20 are in a positional relationship in which the movement trajectory of the center of the chuck table 15 intersects the Z-axis direction line passing through the rotation center of the wheel mount 25 at a right angle.

  At the wafer attaching / detaching position, the wafer 1 to be cut is placed on the chuck table 15, and the wafer 1 after the cutting is removed from the chuck table 15. In the wafer attaching / detaching area, a height measuring unit 50 (height position detecting means) for measuring the height of the chuck table 15 in the wafer attaching / detaching area and the height of the wafer 1 held by the chuck table 15 is disposed. Has been.

  The height measuring unit 50 includes a frame 51 fixed to the base 11 and one length measuring device 52 attached to the frame 51. As shown in FIG. 5, in the length measuring device 52, a thin rod-shaped measuring terminal 52b protrudes from a lower end portion of a cylindrical main body portion 52a fixed to the frame 51 in a state where the axial direction is parallel to the Z direction. It is what. In FIG. 5, three length measuring devices 52 are shown. This indicates that there are three measuring points, and only one length measuring device 52 is actually provided.

  The measurement terminal 52b can be moved up and down, and the measurement point of the object to be measured is brought into contact with the tip thereof, and the height of the object at that time is measured by the length measuring device 52. Specifically, as this length measuring device 52, a contact type linear gauge: DG-10B (manufactured by Sony Manufacturing Systems) or the like is preferably used. As the length measuring device 52, a non-contact type laser displacement meter, a back pressure sensor, a capacitance sensor, and the like can be used in addition to such a contact type.

(B) Mechanism of Supply / Recovery Area As shown in FIG. 3, a rectangular recess 18 is formed in the supply / recovery area 11 </ b> B. A transfer mechanism 60 in which a fork 60b is mounted is installed at the tip of a node link type horizontal turning arm 60a.

  A supply arm 63 having a suction plate 63b attached to the front end of the cassette 61, the alignment table 62, and the horizontal turning arm 63a of the first node is disposed around the recess 18 counterclockwise as viewed from above. The recovery arm 64 having the same structure as the supply arm 63, the horizontal turning arm 64a and the suction plate 64b, the spinner type cleaning device 65, and the cassette 66 are arranged.

  The cassette 61, the alignment table 62 and the supply arm 63 are means for supplying the wafer 1 to the chuck table 15, and the recovery arm 64, the cleaning device 65 and the cassette 66 recover the processed wafer 1 from the chuck table 15. Means. Although the two cassettes 61 and 66 have the same structure, they will be referred to as a supply cassette 61 and a recovery cassette 66 according to applications. These cassettes 61 and 66 are for accommodating and carrying a plurality of wafers 1 and are set at predetermined positions on the base 11.

  A plurality of unprocessed wafers 1 are accommodated in the supply cassette 61 in a stacked state. The transfer mechanism 60 takes out one wafer 1 from the supply cassette 61 by raising and lowering and turning the arm 60a and gripping the fork 60b, and further raises the wafer 1 on the surface on which the stacked portion 5 is formed. And has a function of being placed on the alignment table 62 in a state of being directed to.

  On the alignment table 62, the wafer 1 is placed in a fixed state. The supply arm 63 sucks the wafer 1 on the alignment table 62 to the suction plate 63b, turns the arm 63a, places the wafer 1 on the chuck table 15, lowers the horizontal turning arm 63a, and then sucks it. By stopping the operation, it has a function of placing the wafer 1 on the chuck table 15.

  The recovery arm 64 has a function of sucking the processed wafer 1 from the chuck table 15 onto the suction plate 64b, turning the arm 64a, and transferring the wafer 1 into the cleaning device 65. The cleaning device 65 has a function of rotating the wafer 1 and shaking off the water after the wafer 1 is washed with water. The wafer 1 cleaned by the cleaning device 65 is transferred and accommodated in the collection cassette 66 by the transfer mechanism 60.

  When the wafer 1 is attached to or detached from the chuck table 15 by the supply arm 63 and the collection arm 64, the movable table 14 is stopped in the wafer attachment / detachment region. In addition, a nozzle 67 that cleans the chuck table 15 by spraying high-pressure air onto the chuck table 15 is disposed between the supply arm 63 and the recovery arm 64. Cleaning of the chuck table 15 by the nozzle 67 is performed on the chuck table 15 in the wafer attachment / detachment region.

[3] Cutting of Wafer by Processing Device Next, a method of using the processing device 10 having the above configuration and operation will be described below.
First, prior to cutting the wafer 1, the gap between the cutting tool 26 of the processing unit 20 and the upper surface of the chuck table 15 is made uniform so that the cutting plane by the cutting tool 26 and the upper surface of the chuck table 15 are parallel to each other. Self-cutting is performed by cutting the upper surface by the processing unit 20 itself.

  In the self-cut, first, the cutting unit 20 is lowered by the feed mechanism 30 to rotate the wheel mount 25 and the cutting tool 26 until the cutting tool 26 can cut the entire upper surface of the chuck table 15 to a predetermined thickness. From this state, the chuck table 15 is moved from the attachment / detachment position toward the machining position, and the chuck table 15 is moved in the direction of the wall 12 until the entire upper surface of the chuck table 15 is cut by the cutting tool 26. When the self-cutting of the chuck table 15 is finished, the chuck table 15 is returned to the attaching / detaching position.

  Next, one wafer 1 is taken out by the transfer mechanism 60 from the supply cassette 61 in which a plurality of wafers 1 shown in FIG. 1 are accommodated, and the wafer 1 is surfaced upward by the transfer mechanism 60. In the state, it is moved to the alignment table 62 and positioned. Next, the wafer 1 is moved from the alignment table 62 by the supply arm 63 to the upper surface of the chuck table 15 that has been previously stopped in the attachment / detachment region, with the surface facing upward. Then, the air suction operation of the chuck table 15 is started, and the wafer 1 is sucked and held on the chuck table 15. In this state, since the wafer 1 has a smaller diameter than the chuck table 15, the outer periphery of the chuck table 15 is not covered with the wafer 1 and is exposed as shown in FIG. 6.

  This is the preparation for the cutting process. In this processing apparatus 10, the total thickness control for processing the thickness of the entire wafer 1 to be constant and the thickness control of the stacking part 5 for processing the thickness of the stacking portion 5 of the wafer 1 to be constant. And the cutting amount control of the lamination | stacking part 5 which processes the cutting amount of the lamination | stacking part 5 uniformly can be performed. Hereinafter, the operation of cutting the wafer 1 for each of these control methods will be described.

(A) Total Thickness Control As shown in FIG. 5, the upper surface height position (a) of the chuck table 15 is measured with respect to the outer peripheral portion of the chuck table 15 that is not covered by the wafer 1 as a measurement point. Measurement is performed by the length measuring device 52 of the unit 50 (upper surface position detection process of the chuck table). Next, the height position (b) of the upper surface of the substrate portion 1A of the wafer 1 is measured by the length measuring device 52 (substrate thickness recognition step), and the height position (c) of the upper surface of the laminated portion 5 is determined. Measurement is performed by the length measuring device 52 (lamination part upper surface position detection step). Then, the total thickness of the wafer 1 before processing “the height position (c) of the stacked portion 5−the height position (a) of the chuck table 15” and the height of the stacked portion 5 before processing “the height of the stacked portion 5”. The height position (c) −the height position (b) of the substrate portion 1A ”is calculated.

  Next, the height of the processing unit 20 is adjusted by the feed mechanism 30 so that the distance between the chuck table 15 and the cutting tool 26 becomes the same value as the predetermined total thickness of the wafer 1, and then the wheel mount 25 is rotated. . From this state, the moving table 14 is moved in the direction of the machining position, and the wafer 1 held on the chuck table 15 is sent to the machining position at a predetermined speed. Thereby, the upper surface of the laminated part 5 of the wafer 1 is gradually scraped off from the outer peripheral edge side on the wall part 12 side by the rotating cutting tool 26 (laminated part cutting process). At this time, the laminated portion 5 cuts until the thickness of the wafer 1 reaches a predetermined value within a range not reaching the thickness of the substrate portion 1A recognized by the height position (b) of the substrate portion 1A. When cutting starts and the distance corresponding to the diameter of the wafer 1 moves, the entire upper surface of the laminated portion 5 is cut. As an example of suitable cutting conditions, the rotational speed of the cutting tool 26 by the servo motor 24 is about 2000 RPM, and the feed speed of the wafer 1 by the movement of the stage 14 is 0.66 mm / second.

(B) Thickness control of laminated portion Among the measurement points (a), (b), and (c) shown in FIG. 5, the height position (c) of the upper surface of the laminated portion 5 on the wafer and the upper surface of the substrate portion 1A The height position (b) of is measured. Then, “the height position (c) of the laminated portion 5−the height position (b) of the substrate portion 1A” is calculated, a cutting amount is obtained based on the calculated value, and the laminated portion is subjected to the cutting operation similar to the above. 5 is cut. In the thickness control of the laminated portion 5, even if the thickness of the wafer 1 excluding the laminated portion 5 varies, the thickness of the laminated portion 5 can be processed to be constant.

(C) Cutting amount control of laminated portion All measurement points (a), (b), and (c) shown in FIG. 5 are measured, and a constant cutting amount is determined from the height position (c) of the upper surface of the laminated portion 5. Then, the laminated portion 5 is cut. At this time, the laminated portion 5 is cut within a range not reaching the thickness of the substrate portion 1A recognized by the height position (b) of the substrate portion 1A. The thickness of the substrate portion 1A is the same as that in the case of the above total thickness control, but is recognized based on the height position (b) of the substrate portion 1A by the length measuring device 52. The method for recognizing the thickness is not limited to this. For example, the thickness may be measured in advance, or the thickness setting value at the time of cutting the substrate portion 1A may be used.

  The above is the cutting method for each control. In any case, when the cutting is completed, the machining unit 20 is raised to stop the rotation of the cutting tool 26, the chuck table 15 is moved to the attachment / detachment region, and the chuck table 15 While the holding of the wafer 1 is continued, the target height is measured again by the length measuring device 52, and it is confirmed whether or not it is a predetermined value. If the predetermined value is not output, the cutting is performed again. If the predetermined value is output, the cutting is completed. When the cutting is completed, the suction operation is stopped and the holding state of the wafer 1 on the chuck table 15 is released.

The wafer 1 released from the chuck table 15 is transferred from the attachment / detachment area to the cleaning device 65 by the recovery arm 64, and then washed with water and then the water is removed. Then, the transfer mechanism 60 puts the wafer 1 into the recovery cassette 66. Moved and contained.
The above is a cycle in which the laminated portion 5 is cut with respect to one wafer 1 and then washed and collected. This cycle is repeated.

[4] Effect According to the present embodiment, since the measurement for calculating the necessary amount of cutting is performed while the wafer 1 to be subjected to the cutting is held on the chuck table 15, the height is measured. The labor of removing the wafer 1 from the chuck table 15 and setting it on another length measuring device and then holding the wafer 1 on the chuck table 15 again is saved. For this reason, cutting and height measurement can be continuously performed without stagnation, and as a result, production efficiency can be improved. Further, since the occurrence of errors due to the transfer of the wafer 1 can be prevented, the height of the laminated portion 5 and the height of the entire wafer 1 can be obtained as designed with higher accuracy.

  In the above embodiment, a semiconductor wafer is taken up as a substrate. However, the substrate handled in the present invention is not limited to this. For example, a wiring is formed on a ceramic base material or an electronic component is mounted. Various types of substrates, such as sushi, can be targeted.

It is a top view of the semiconductor wafer by which the surface is cut by one Embodiment of this invention. It is an expanded sectional view of the semiconductor wafer shown in FIG. It is a perspective view of the processing apparatus which can implement the cutting method of one embodiment. It is a side view which shows the state which cuts a semiconductor wafer with the processing apparatus shown in FIG. It is a side view which shows the measuring point of the wafer by the height measuring unit which the processing apparatus shown in FIG. 3 comprises. FIG. 4 is a plan view showing a state in which a semiconductor wafer is held on a chuck table of the processing apparatus shown in FIG. 3.

Explanation of symbols

1 ... Semiconductor wafer (substrate)
DESCRIPTION OF SYMBOLS 1A ... Board | substrate part 5 ... Laminate part 10 ... Processing apparatus 15 ... Chuck table 20 ... Processing unit (processing means)
26 ... Bite (cutting blade)
50 ... Height measuring unit (height position detecting means)
52 ... Length measuring device

Claims (3)

A chuck table for holding a substrate, a processing means having a cutting blade for cutting the upper surface of the substrate held by the chuck table, and a chuck table for positioning the chuck table in a substrate attaching / detaching region and a processing region for cutting by the processing means. Using a processing apparatus comprising a moving means and a height position detecting means for detecting the position of the upper surface of the substrate disposed in the substrate attaching / detaching region and held at least on the chuck table,
The substrate is composed of a substrate portion and a laminated portion having a predetermined thickness on the upper surface of the substrate portion, and is a substrate processing method for cutting the laminated portion of the substrate,
A step of detecting the position of the upper surface of the laminated portion of the substrate, wherein the substrate is held on the chuck table, and the position of the upper surface of the laminated portion of the substrate is detected by the height position detecting means;
An upper surface position detecting step of the chuck table for detecting the position of the upper surface of the chuck table before or after the upper surface position detecting step of the laminated portion of the substrate;
A substrate portion thickness recognition step for recognizing the thickness of the substrate portion of the substrate;
A processing region positioning step of moving the chuck table to position the substrate in the processing region;
The thickness of the substrate is calculated based on the position information obtained by the step of detecting the upper surface position of the laminated portion of the substrate and the step of detecting the upper surface position of the chuck table, and the cutting blade of the processing means is positioned on the upper surface of the laminated portion of the substrate. And a substrate stacking portion cutting step for cutting until the substrate thickness reaches a predetermined value within a range not reaching the thickness of the substrate portion obtained in the substrate portion thickness recognition step. . A chuck table for holding a substrate, a processing means having a cutting blade for cutting the upper surface of the substrate held by the chuck table, and a chuck table for positioning the chuck table in a substrate attaching / detaching region and a processing region for cutting by the processing means. Using a processing apparatus comprising a moving means and a height position detecting means for detecting the position of the upper surface of the substrate disposed in the substrate attaching / detaching region and held at least on the chuck table,
The substrate is composed of a substrate portion and a laminated portion having a predetermined thickness on the upper surface of the substrate portion, and is a substrate processing method for cutting the laminated portion of the substrate,
A step of detecting the position of the upper surface of the laminated portion of the substrate, wherein the substrate is held on the chuck table, and the position of the upper surface of the laminated portion of the substrate is detected by the height position detecting means;
A substrate portion upper surface position detecting step of holding the substrate on the chuck table and detecting an upper surface of the substrate portion of the substrate by the height position detecting means;
A processing region positioning step of moving the chuck table to position the substrate in the processing region;
The thickness of the laminated part is calculated based on the position information obtained by the laminated part upper surface position detecting step of the substrate and the substrate part upper surface position detecting step of the substrate, and the upper surface of the laminated part is cut and laminated by the processing means. And a laminated part cutting step for forming the substrate with a predetermined thickness. A chuck table for holding a substrate, a processing means having a cutting blade for cutting the upper surface of the substrate held by the chuck table, and a chuck table for positioning the chuck table in a substrate attaching / detaching region and a processing region for cutting by the processing means. Using a processing apparatus comprising a moving means and a height position detecting means for detecting the position of the upper surface of the substrate disposed in the substrate attaching / detaching region and held at least on the chuck table,
The substrate is composed of a substrate portion and a laminated portion having a predetermined thickness on the upper surface of the substrate portion, and is a substrate processing method for cutting the laminated portion of the substrate,
A step of detecting the position of the upper surface of the laminated portion of the substrate, wherein the substrate is held on the chuck table, and the position of the upper surface of the laminated portion of the substrate is detected by the height position detecting means;
A substrate portion thickness recognition step for recognizing the thickness of the substrate portion of the substrate;
A processing region positioning step of moving the chuck table to position the substrate in the processing region;
Based on the positional information obtained by the step of detecting the position of the upper surface of the laminated portion of the substrate, the cutting blade of the processing means is positioned on the upper surface of the laminated portion of the substrate, and the thickness of the substrate portion obtained in the thickness recognition step of the substrate portion A substrate processing method comprising: a substrate stacking portion cutting step of cutting a predetermined amount of the upper surface of the substrate stacking portion within a range not reached.

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