JP4767616B2 - Semiconductor device manufacturing method and semiconductor device - Google Patents

Description

  The present invention relates to a metal alkoxide solution, a semiconductor device manufacturing method using the same, and a semiconductor device.

  In recent years, polycrystalline silicon and amorphous silicon TFTs formed on a glass substrate have been used for pixels and drivers in flat panel displays such as liquid crystal displays and organic EL displays. However, considering mobile applications, instead of glass substrates, the use of light and hard-to-break plastic substrates is eagerly desired. However, heat resistance when manufacturing semiconductor devices such as TFTs, stability and complexity in photolithography processes, etc. Was the problem. In order to cope with this, it is considered that a semiconductor device is once formed on a glass substrate and then transferred to a plastic substrate (for example, see Patent Document 1).

Recently, Hosono et al. Reported a flexible thin film transistor using an amorphous oxide semiconductor manufactured by a room temperature process (see, for example, Non-Patent Document 1 and Patent Document 2). According to this, amorphous ZnGaInO ₄ is formed on the plastic substrate by a vapor phase method, and high rectification characteristics are obtained.

On the other hand, in order to form a transparent conductive film pattern, photolithography using a photoresist is generally used. For example, in Patent Documents 3 and 4, a metal alkoxide sol or a metal oxide sol obtained using a metal alkoxide or a metal salt as a main raw material is applied onto a substrate and dried to form a thin film, and then ultraviolet rays are patterned. A method of forming a pattern by irradiation and etching is disclosed.
JP 2004-235238 A JP 2004-103957 A JP-A-6-166501 JP-A-9-157855 Nature, (2004) Vol.432, pp.488-492

However, in the production by the vapor phase method, pattern formation is performed by photolithography, but further improvement is necessary from the viewpoint of stability in the lithography process and complexity of the process.
Accordingly, an object of the present invention is to provide a metal alkoxide solution capable of efficiently producing a semiconductor device having good electrical performance, a method for producing a semiconductor device using the metal alkoxide solution, and a semiconductor device.

The metal alkoxide solution of the present invention comprises a metal alkoxide compound represented by the following general formula I and general formula II (part of the compounds represented by general formula I and general formula II are linked to form a composite alkoxide. And may have a viscosity of 1 to 100 mPa · s.
Zn (OR ¹ ) ₂ ... [I]
M (OR ² ) ₃ ... [II]
(Wherein M is at least one element of aluminum, iron, indium and gallium, and the ratio Zn / M is in the range of 0.2 to 10. R ¹ and R ² are the same or different. And represents a substituted or unsubstituted alkyl group having 1 to 20 carbon atoms.)

Here, in the above general formula II, M preferably contains at least two elements of aluminum, iron, indium and gallium, and the ratio thereof is in the range of 0.05-20.
The ratio Zn / M in the metal alkoxide solution is preferably in the range of 0.2 to 1.5.

The metal alkoxide solution preferably further contains at least one high boiling point solvent represented by the following general formula III and having a boiling point of 120 ° C. to 250 ° C.
R ³ —OH ... [III]
(In the formula, R ³ represents a substituted or unsubstituted alkyl group, alkenyl group, cycloalkyl group, or aryl group having 1 to 12 carbon atoms.)

The method for producing a semiconductor device of the present invention is a method for producing a semiconductor device having a semiconductor thin film layer, a gate insulating film, a source electrode, a drain electrode, and a gate electrode on a substrate. And discharging the metal alkoxide solution to form a semiconductor thin film layer.
Here, the heating is preferably performed by an infrared or ultraviolet laser.
The semiconductor device of the present invention is manufactured by the above-described method for manufacturing a semiconductor device of the present invention.
Here, the semiconductor thin film layer is preferably amorphous, and the substrate is preferably plastic.

  The metal alkoxide solution of the present invention contains compounds represented by general formulas I and II, that is, metal alkoxides or composite alkoxides, and these are heated to form metal oxide nanoparticles having semiconductor properties. Can do. The metal oxide nanoparticles having semiconductor characteristics can exhibit good semiconductor characteristics not only in a crystal but also in an amorphous state. For this reason, in addition to being easy to handle in the state of a solution, it is not necessary to perform a heat treatment at a high temperature necessary for crystallization, and a dense semiconductor thin film layer can be formed by heating at a low temperature.

  ADVANTAGE OF THE INVENTION According to this invention, the metal alkoxide solution which can manufacture the semiconductor device which has favorable electrical performance efficiently, the manufacturing method of a semiconductor device using the same, and a semiconductor device are provided.

The metal alkoxide solution of the present invention contains a metal alkoxide compound represented by the above general formula I and general formula II, and has a viscosity of 1 to 100 mPa · s.
Zn (OR ¹ ) ₂ ... [I]
M (OR ² ) ₃ ... [II]
According to the present metal alkoxide solution, by heating the solution itself, metal oxide nanoparticles having good semiconductor characteristics even in an amorphous state can be obtained, so that a semiconductor thin film can be easily formed.

Each of the metal alkoxide compounds represented by the above general formulas I and II may be present alone or in combination of two or more in the solution.
In the above formula, M is at least one element of aluminum, iron, indium, and gallium. From the viewpoints of particle formation temperature, diffusibility to an adjacent gate insulating film, and electrical characteristics, these elements are preferably Including at least two of them. Among these, aluminum, gallium, or indium is preferable from the viewpoint of showing high insulation at room temperature and easily obtaining normally-off characteristics.
Further, a combination of gallium and indium is particularly preferable from the viewpoint of electrical characteristics, and a combination of aluminum and indium is particularly preferable from the viewpoint of material cost. Of these elements, it is preferable that at least indium is contained from the viewpoint that excellent electrical characteristics can be obtained even in an amorphous state.
When two elements are included, the ratio of the other element to one element is 0.05 to 20, preferably 0.1 to 10. When three elements are included, each element can be used in an arbitrary ratio as long as it contains at least 5 atomic%.

  The metal alkoxide compounds represented by the above general formula I and general formula II may each exist alone in the metal alkoxide solution, or a part thereof may be linked to form a composite alkoxide. At this time, in each compound and / or composite alkoxide in the metal alkoxide solution, the ratio Zn / M is in the range of 0.2 to 10. If it is less than 0.2, the raw material cost becomes high. On the other hand, if it exceeds 10, the Zn component becomes excessive and crystals of zinc oxide are generated, and composite oxide nanoparticles cannot be formed. The range of Zn / M is preferably in the range of 0.2 to 1.5, and more preferably in the range of 0.5 to 1.3 from the viewpoint of electrical characteristics.

In the above general formulas I and II, R ¹ and R ² may be the same or different and each represents an alkyl group having 1 to 20 carbon atoms, preferably 1 to 6 carbon atoms, and may be substituted or unsubstituted. May be. When the number of carbon atoms exceeds 20, the distance between metal molecules becomes long, and an alkyl group may remain in the metal oxide when forming a thin film, which is not preferable. Examples of the substituent include an alkyl group having 1 to 4 carbon atoms, an amino group (the hydrogen atom of the amino group may be substituted with an alkyl group having 1 to 4 carbon atoms), an alkoxy group having 1 to 4 carbon atoms, and a hydroxyl group. And so on.

  Examples of such compounds corresponding to general formula I and general formula II include zinc ethoxide, zinc ethoxy ethoxide, zinc dimethylamino ethoxide, zinc methoxy ethoxide, indium isopropoxide, indium-n-butoxide, indium. Methoxy ethoxide, indium diethylamino ethoxide, gallium ethoxide, gallium isopropoxide, aluminum isopropoxide, aluminum-n-butoxide, aluminum-s-butoxide, aluminum-t-butoxide, aluminum ethoxide, aluminum ethoxyethoxy ethoxide And iron isopropoxide.

  In the metal alkoxide solution of the present invention, the metal alkoxide compounds of the general formulas I and II are contained in a total concentration of Zn and M of 0.5 to 20% by mass, preferably 1 to 10% by mass. If the amount is less than 0.5% by mass, a uniform thin film may not be formed. If the amount exceeds 20% by mass, a sufficiently thin semiconductor film may not be formed.

  Moreover, although the viscosity of a nanoparticle dispersion liquid changes with application | coating means, for example, in the case of an inkjet and a dispenser, it is 1-100 mPa * s from a dischargeable viewpoint, Preferably it is 1-20 mPa * s. The viscosity of the nanoparticle dispersion can be measured with a commercially available viscometer, for example, a vibration viscometer VISCOMATE (manufactured by CBC Materials Co., Ltd.).

The metal alkoxide solution contains a suitable solvent for dissolving the metal alkoxide compound. Examples of the solvent include water, alcohols, amino alcohols, glycols, and the like, and at least one high-boiling solvent represented by the following general formula III is contained from the viewpoint of the stability of the dispersion and the drying property. It is further preferable.
R ³ —OH [III]

Here, R ³ represents a substituted or unsubstituted alkyl group, alkenyl group, cycloalkyl group, or aryl group having 2 to 12 carbon atoms.
Examples of the alkyl group include a methyl group, an ethyl group, a propyl group, an isopropyl group, a butyl group, a pentyl group, a hexyl group, and an octyl group. Examples of the alkenyl group include a butenyl group and a propenyl group, examples of the cycloalkyl group include a cyclohexyl group, and examples of the aryl group include a phenyl group.
Preferable examples of the substituent for the alkyl group or alkenyl group include an alkoxy group (methoxy group, ethoxy group, isopropoxy group, methoxyethoxy group, phenoxy group, etc.), hydroxyl group, amino group and the like. Examples of preferable substituents for the cycloalkyl group and the aryl group include an alkyl group (methyl group, ethyl group, hydroxyethyl group, etc.), an alkoxy group (methoxy group, ethoxy group, isopropoxy group, methoxyethoxy group, phenoxy group). Etc.), hydroxyl groups, amino groups and the like.
Particularly preferred substituents include dialkylamino groups (dimethylamino group, diethylamino group, di-n-propylamino group, diisopropylamino group, di-n-butylamino group, di-t-butylamino group, etc.). .

  The boiling point of the high-boiling solvent represented by the general formula III is 120 ° C. to 250 ° C., and preferably 130 ° C. to 200 ° C. from the viewpoint of reducing the load during drying. If the boiling point is less than 120 ° C., the drying speed is high and it is difficult to obtain sufficient smoothness, and it is not preferable because the boiling point is more than 250 ° C., since it tends to remain when forming a semiconductor thin film. The metal alkoxide solution according to the present invention may contain at least one high-boiling solvent represented by the general formula III as a dispersion medium, and may be a combination of a plurality of these or other solvents. May be.

Examples of the high boiling point solvent corresponding to the general formula III include 2-ethoxyethanol, 2- (methoxyethoxy) ethanol, 2- (ethoxyethoxy) ethanol, 2-isopropoxyethanol, 1-ethoxy-2-propanol, 2 -Diethylaminoethanol, 2-dipropylaminoethanol, cyclohexanol, ethylene glycol, diethylene glycol, benzyl alcohol and the like.
Examples of the solvent that can be used in combination with these dispersion media include dioxane, dimethylformamide, dimethyl sulfoxide, and acetylacetone.

  The metal alkoxide solution of the present invention is added as an antistatic agent, a plasticizer, a polymer binder, a thickener and the like according to the purpose, and after adjusting the physical properties, it is used as an ink solution for an inkjet printer or a dispenser. It may be used.

The metal alkoxide solution of the present invention can be applied in the form of a solution and can form a thin film with a smooth surface. For this reason, a thinner film can be formed.
In addition, since the metal oxide nanoparticle dispersion having good semiconductor characteristics can be easily formed by heating and pyrolyzing the solution itself, it is preferably used for constituting a semiconductor film in a semiconductor device. Can do.

The metal oxide nanoparticles obtainable by heating the metal alkoxide solution of the present invention can have an average particle size of 50 nm or less. If it is 50 nm or less, large energy is not required to crystallize the particles, electrical characteristics such as resistivity and carrier mobility can be in a favorable range, and further, when manufacturing a semiconductor device. A sufficiently thin semiconductor film can be formed.
An average particle size of less than 1 nm is not preferable because the particles are unstable and coalescence is likely to occur during coating and drying. The average particle size of the metal oxide nanoparticles is preferably 2 nm to 30 nm, more preferably 2 nm to 10 nm, from the viewpoints of particle stability and coated surface smoothness. The coefficient of variation is monodisperse particles of 30% or less, preferably 20% or less, more preferably 10% or less, from the viewpoint of the smoothness of the coated surface. The particle size of the metal oxide nanoparticles can be measured by a transmission electron microscope (TEM) or X-ray diffraction (XD).

  The metal oxide nanoparticles may be in a polycrystalline state or an amorphous state, but are preferably in an amorphous state. In the amorphous state, particles can be formed at a relatively low temperature, so that the particle size can be reduced and the smoothness and denseness of the semiconductor thin film layer can be improved. Therefore, by using the metal alkoxide solution of the present invention, a semiconductor device can be fabricated in an amorphous state without crystallizing the nanoparticles.

Examples of the metal oxide nanoparticles obtained by pyrolyzing the metal alkoxide solution of the present invention include those represented by the following general formula IV or IV ′.
_{Zn X M Y In Z O (} X + 1.5Y + 1.5Z) [IV]
(Wherein M is at least one element of aluminum, iron and gallium, the ratio X / Y is in the range of 0.2 to 10, and the ratio Y / Z is in the range of 0.1 to 2.5. .)
Zn _{X '} In _Z' O _{(X '+ 1.5Z')} [IV ']
(In the formula, the ratio X ′ / Z ′ is in the range of 0.5 to 8.)

  As a semiconductor device that can include these metal oxide nanoparticles, various devices can be included. For example, a field effect transistor, a bipolar transistor, a stacked semiconductor device, a light emitting element, and the like can be given. . Details of the configuration and structure of these semiconductor devices are described in documents such as JP-A-2002-76356, and can be applied to the present invention.

Next, the semiconductor device of the present invention produced using the metal alkoxide solution of the present invention will be described.
FIG. 1 shows a semiconductor device 10 as an example of a semiconductor device to which the metal alkoxide solution of the present invention can be applied.
In the semiconductor device 10, a source electrode 18, a drain electrode 20, and a semiconductor thin film 22 are provided on a substrate 12 via a gate electrode 14 and a gate insulating film 16.

The substrate 12 is mainly composed of an insulating material, such as quartz glass, alkali-free glass, crystallized transparent glass, heat-resistant glass (Pyrex (registered trademark) glass), sapphire, and the like; Al ₂ O ₃ , MgO , BeO, ZrO ₂ , Y ₂ O ₃ , ThO ₂ , CaO, GGG (gadolinium gallium garnet), etc .; polycarbonate; acrylic resin such as polymethyl methacrylate; polyvinyl chloride, vinyl chloride copolymer, etc. Polyvinyl chloride resin; Epoxy resin; Polyarylate; Polysulfone; Polyethersulfone; Polyimide; Fluorine resin; Phenoxy resin; Polyolefin resin; Nylon; Styrene resin; ABS resin; You may use them together. A film-like flexible substrate or a rigid substrate can be obtained by appropriately selecting from these materials depending on the application.

When a plastic substrate having low heat resistance and low light resistance is used, a denaturation preventing layer (underlayer) is provided to prevent the plastic from being denatured by laser light, and a gate electrode 14 and a gate insulating film 16 are formed thereon. It is preferable to do. The denaturation preventing layer is a layer having at least a function of reducing the energy of light reaching the plastic substrate.
Preferred materials include SiO ₂ , SnO ₂ , ZnO, MgO, CaO, SrO, BaO, Al ₂ O ₃ , ZrO ₂ , Nb ₂ O ₅ , V ₂ O ₅ , TiO ₂ , Sc ₂ O ₃ , Y ₂ O. ₃ , La ₂ O ₃ , Ga ₂ O ₃ , GeO ₂ , Ta ₂ O ₅ , HfO _{2 and the} like. Among these, those having a large insulation resistance can be used as a material for the gate insulating film. The denaturation preventing layer can be formed by a usual film forming method such as a sol-gel method, a sputtering method, an ion plating method, or a vacuum evaporation method. The substrate may have any shape such as a disk shape, a card shape, or a sheet shape.

As the source electrode 18, the drain electrode 20, and the gate electrode 14, an opaque conductive material such as a metal such as aluminum or copper, a composite metal such as Ti-Al or Mo-Ti, and highly doped semiconductor polysilicon, or Sn is doped. In ₂ O ₃ (ITO), Sb-doped SnO ₂ (ATO), Zn-doped In ₂ O ₃ (IZO), MgIn ₂ O ₄ , CuAlO ₂ , AgInO ₂ , Group 13 elements (B, Al, Ga) , In, Tl), Group 17 element (F, Cl, Br, I), Group 1 element (Li, Na, K, Rb, Cs), Group 15 element (N, P, As, Sb, Bi) A transparent conductive material such as conductive ZnO doped with or the like can be mentioned, and these may be used in combination as desired.
In addition, although each film thickness as the source electrode 18, the drain electrode 20, and the gate electrode 14 changes with electrical characteristics desired, it can generally be 0.04-1 micrometer.

Examples of the gate insulating film 16 include transparent insulating materials such as insulating ZnO, SiN, and SiO ₂ doped with a monovalent element, a group 15 element, or a 3d transition metal element. . Here, examples of the element capable of taking a monovalent valence include a group 1 element (Li, Na, K, Rb, Cs), Cu, Ag, Au, and the like. N, P, As, Sb, Bi, etc. can be mentioned. In addition, as the gate insulating film 16, a transparent insulating oxide such as Al ₂ O ₃ , MgO, CeO ₂ , ScAlMgO ₄ , and SiO ₂ can be used. Further, a transparent insulator such as a polymer film, vinyl, or plastic may be used.
In addition, although the dry film thickness as the gate insulating film 16 changes with electrical characteristics desired, it can generally be 0.1-1 micrometer.

  The semiconductor thin film 22 can be formed using the metal alkoxide solution of the present invention described above. The dry film thickness of the semiconductor thin film 22 can be 20 to 500 nm, preferably 30 to 200 nm.

  Such a method of manufacturing a semiconductor device according to the present invention is performed by a conventional method toward a predetermined position on the substrate 12 in which the source electrode 18 and the drain electrode 20 are provided on the gate electrode 14 and the gate insulating film 16. It includes discharging the metal alkoxide solution according to the present invention by an ink jet method or a dispenser method to apply a metal alkoxide layer (pattern formation), drying the pattern, and then heating to form the semiconductor thin film 22. . Thus, since the semiconductor thin film 22 is formed by the inkjet method or the dispenser method, a semiconductor device can be manufactured efficiently and with low energy without applying lithography.

  In the ejection process using the ink jet system and the dispenser system, the ejection heads are arranged in a line, and each ejection head is operated based on the graphic information input to the computer. The solution is applied. Thereby, a semiconductor thin film pattern can be obtained in a short time without waste of the metal alkoxide solution.

  When the metal alkoxide solution is discharged using an ink jet printer or by a dispenser method, the thickness of the coating film is preferably 0.1 to 1000 μm, more preferably 1 to 500 μm. If it is in these ranges, the dry film thickness for comprising the semiconductor device provided with the appropriate electrical property can be formed.

  There are various types of ink jet printers depending on the ink ejection method. For example, piezoelectric element type, bubble jet (registered trademark) type (a method in which ink is foamed and ink is ejected by the pressure), air flow type, solid heat-melting ink type, electrostatic induction type, acoustic ink print type There are an electrorheological ink type and a continuous jet type suitable for mass production, and any of them can be used in the present invention, and can be appropriately selected depending on the shape and thickness of the pattern, the type of ink, and the like. . In the case of the ink jet method, the pattern width and pitch can be reduced to about 3 μm by adjusting the size of the ejected ink droplets. Therefore, it can sufficiently cope with the formation of circuit patterns and display pixels.

  In addition, by connecting an inkjet printer or dispenser to a computer such as a personal computer, a pattern can be formed on the substrate based on graphic information input to the computer.

A pattern formed by discharging a metal alkoxide solution in a pattern can be heated (fired) to form a metal oxide thin film from the metal alkoxide, which can be densified and crystallized if necessary, providing good semiconductor properties. The provided semiconductor film layer 22 is formed.
In addition, you may perform the drying of the pattern before heat processing suitably, and when implementing, you may carry out by natural drying or using a normal dryer. The drying temperature is not particularly limited, but can generally be room temperature to 150 ° C.

When the substrate is heat resistant such as glass or quartz, the heating (firing) can be performed up to about 500 ° C. using an electric furnace or the like.
On the other hand, when a material having a low heat-resistant temperature such as a plastic substrate is used as the substrate, it is preferably heated by an infrared or ultraviolet laser. The use of a laser can irradiate a beam and focus on the coating film portion, so that only the drawn coating film portion can be heated with high energy, and as a result, generally heat resistance such as a plastic substrate is high. Even a non-substrate can be applied.

  The laser to be irradiated is more preferably infrared light (heat rays) of 750 nm to 1700 nm and / or ultraviolet light having absorption of 360 nm or less. Further, it is desirable that the substrate itself has no absorption or has a weak absorption wavelength. Typical lasers include semiconductor lasers such as AlGaAs and InGaAsP, Nd: YAG lasers, excimer lasers such as ArF, KrF, XeCl, and XeF, and dye lasers.

  In the heating process using a laser, light can be focused on a target irradiation portion and the portion can be made high energy, and formation of metal oxide nanoparticles, formation of a dense metal oxide thin film, and crystallization can be caused. Moreover, since the average particle size of the metal oxide nanoparticles formed by the heating process is as small as 1 to 50 nm, the metal oxide thin film can be densified and crystallized at a lower temperature, and laser irradiation is performed for a short time. Thus, the semiconductor thin film 22 can be obtained. In addition, if the obtained metal oxide thin film is in an amorphous state, a semiconductor device can be formed at a relatively low temperature. Therefore, not only an inorganic material but also an organic material can be used as a substrate when forming a semiconductor device. it can.

The intensity of the irradiation light of this laser irradiation is not particularly limited as long as the metal alkoxide forms metal oxide nanoparticles and the metal oxide thin film 22 is dense and, if necessary, crystallized. Absent. Preferably it is 0.1 mJ / cm < ² > or more, More preferably, it is 1-1000 mJ / cm < ² >. Laser irradiation may be continuous or pulsed multiple times.

The gate insulating film 16 is formed using a coating method such as spin coating, dip coating, extrusion coating, or bar coating by preparing a solution for forming an insulating film in which the above-described insulating material is dissolved or dispersed in an appropriate solvent. The film can be formed by a gas phase method such as a method, a liquid phase deposition method, sputtering, or an ion plating method. Preferably, like the semiconductor thin film 22, the gate insulating film 16 is also a solution for forming an insulating film. May be formed by a method including discharging the ink to a predetermined position by an inkjet method or a dispenser method, and heating the discharged insulating film forming solution. At this time, like the semiconductor thin film 22, a drying step may be provided before the heating step. Thereby, the manufacturing efficiency of the whole semiconductor device can be improved.
The insulating film forming solution used here may contain various additives such as an antistatic agent, a plasticizer, a polymer binder, and a thickener in addition to the insulating material described above. The insulating film forming solution may be a nanoparticle dispersion of the insulating material described above.

In addition, between the substrate 12 and the gate insulating film 16 and the gate electrode 14, for the purpose of improving the planarity of the substrate surface, improving the adhesion force, preventing the substrate 12 or the film contacting the substrate 12 from being altered, etc. An undercoat layer may be provided.
Materials for the undercoat layer include, for example, polymethyl methacrylate, acrylic acid / methacrylic acid copolymer, styrene / maleic anhydride copolymer, polyvinyl alcohol, N-methylol acrylamide, styrene / vinyl toluene copolymer, chlorosulfonated Polymer materials such as polyethylene, nitrocellulose, polyvinyl chloride, polyvinylidene chloride, chlorinated polyolefin, polyester, polyimide, vinyl acetate / vinyl chloride copolymer, ethylene / vinyl acetate copolymer, polyethylene, polypropylene, and polycarbonate; heat Curable or light / electron beam curable resins; and surface modifiers such as coupling agents. Thermosetting or photo / electron beam curable resins and coupling agents (for example, silane coupling agents, titanate coupling agents, germanium coupling agents, aluminum coupling agents, etc.) are preferred. Further, it may be an inorganic material such as SiO ₂ or SiN.

  The undercoat layer is prepared by dissolving or dispersing the above materials in an appropriate solvent to prepare a coating solution, and applying the coating solution to the substrate surface using a coating method such as spin coating, dip coating, extrusion coating, or bar coating. It can be formed by coating. In the case of the inorganic material, it can be formed by a vapor phase method such as a liquid deposition method, sputtering, or ion plating method. The thickness of the undercoat layer (when dried) is generally preferably 0.001 to 20 μm, and more preferably 0.005 to 10 μm.

  Since the semiconductor device 10 of the present invention includes the semiconductor thin film 22 formed by heating the metal alkoxide, the semiconductor device 10 can have desired semiconductor characteristics, and the material of the substrate 12 is limited to an inorganic material. And can be produced efficiently. The semiconductor device of the present invention is not limited to the above structure, and the relative positions of the constituent members of the gate insulating film, the source electrode, the drain electrode, the gate electrode, and the semiconductor thin film are determined depending on the use of the semiconductor device. You may change suitably. In addition, the formation order and the like can be changed in accordance with the arrangement of the constituent members.

The present invention will be described in more detail with reference to the following examples, but the present invention is not limited thereto. Further,% in the examples is based on weight (mass) unless otherwise specified.
[Example 1]
[Preparation of metal alkoxide solution 1]
50 ml of ethanol was added to 1.10 g of zinc acetate dihydrate and refluxed for 1 hour. After 30 ml was distilled off, 100 ml of 2-ethoxyethanol was added to prepare Solution A. Formation of zinc ethoxide and zinc ethoxyethoxide was confirmed. To solution A, 1.46 g of indium isopropoxide, 1.03 g of gallium ethoxide, and 100 ml of 2-diethylaminoethanol were added, and the temperature was raised to 110 ° C. and stirred for 1 hour. Further, the mixture was heated to 170 ° C. while partly distilling off the solvent and stirred for 1 hour. Then, after cooling to room temperature, it was stored and a light yellow sample (1) with a yield of about 30 ml was obtained as a metal alkoxide solution (the amount of zinc / metal in the sample: 4.1% by mass).
Samples (2) and (3) were prepared in the same manner except that the amount of zinc acetate dihydrate used was changed to 0.77 g or 1.54 g. Samples (4) and (5) were prepared in the same manner except that the amount of gallium ethoxide used was changed to 0.88 g or 1.23 g. Furthermore, samples (6) and (6) were prepared in the same manner except that 1.03 g of aluminum isopropoxide, 1.24 g of gallium isopropoxide and 1.17 g of iron (III) isopropoxide were used instead of gallium ethoxide. 7) and (8) were prepared.
Prepare sample (9) in the same manner as sample (1) except that 2- (2-aminoethoxyethanol 20 ml, toluene 30 ml and 2-ethoxyethanol 50 ml) was used instead of 100 ml of 2-diethylaminoethanol did.

[Preparation of metal alkoxide solution 2]
Zn: Ga: In = 22: 1: 1 (same as above except that 1.64 g of zinc acetate dihydrate, 0.10 g of indium isopropoxide and 0.07 g of gallium ethoxide were used. A sample (10) of Zn / M = 11) was prepared.

[Sample comparison]
Table 1 summarizes the compositions, viscosities, and the like of the samples (1) to (7) obtained as described above. The composition was determined by ICP analysis. The viscosity was determined by measurement with a vibration viscometer VISCOMATE (manufactured by CBC Materials Co., Ltd.). The identification of the precipitate was judged from the X-ray diffraction pattern.

  As shown in Table 1, Samples (1) to (9) were metal alkoxide solutions containing a composite metal alkoxide having a viscosity of 8 to 9 mPa · s. On the other hand, in the sample (10), a white precipitate of ZnO was generated and could not be used as a metal alkoxide solution. Thus, it was found that a metal alkoxide solution having a large Zn / M ratio could not be synthesized.

[Example 2]
[Production of bottom-gate TFT]
A gate electrode (ITO) was placed on a glass substrate having a width of 50 mm, a length of 50 mm, and a thickness of 0.7 mm by a photolithography method. As the gate insulating film, Y ₂ O ₃ was formed with a film thickness of 300 nm by RF sputtering. The source and drain electrodes were drawn using Au nano ink (manufactured by ULVAC, Inc.) by the inkjet method, and heated at 200 ° C. for 20 minutes. The channel length and channel width were 50 μm and 200 μm, respectively.
On the source and drain electrodes, the sample (1) prepared in Example 1 as a metal alkoxide solution was applied by an inkjet method to a dry film thickness of 150 nm, dried, and then fired at 500 ° C. for 30 minutes to form a channel layer. Thus, a bottom gate type TFT was produced. Sample (1) has been confirmed by experiments that an X-ray diffraction pattern cannot be obtained even after heating at 500 ° C. for 30 minutes after drying, and the semiconductor thin film (channel layer) formed here is also in an amorphous state. Presumed to be.
[Characteristic evaluation of TFT elements]
The fabricated TFT has I _DS = 1 × 10 ⁻⁸ A (V _DS = 5.0 V) when the gate voltage V _G = 0V, and I _DS = 9 × 10 ⁻⁶ A when V _G = 5V. As a result, a normally-off characteristic was obtained.

[Example 3]
[Fabrication of TFT element on flexible substrate]
A 500 nm thick anti-denaturation layer made of SiO ₂ was formed on a PET substrate having a width of 100 mm, a length of 100 mm, and a thickness of 0.2 mm using a silane coupling agent. On this, a gate electrode (ITO) was installed by photolithography. As the gate insulating film, a 2-diethylaminoethanol solution of aluminum isopropoxide was applied by spin coating to a dry film thickness of 350 nm, dried, and then baked at 500 ° C. for 10 minutes. The source and drain electrodes were drawn using an Au nano ink (manufactured by ULVAC, Inc.) by an inkjet method and heated at 250 ° C. for 20 minutes. The channel length and channel width were 50 μm and 200 μm, respectively.
On this source electrode and drain electrode, the sample (1) prepared in Example 1 as a metal alkoxide solution was applied by an inkjet method to a dry film thickness of 150 nm, dried, and then KrF excimer laser light (irradiated with a wavelength of 248 nm) A channel layer was formed by irradiating energy of 80 mJ / cm ² / pulse, frequency 20 Hz, irradiation time 1 minute, and a TFT was manufactured.
[Characteristic evaluation of TFT elements]
The fabricated TFT has I _DS = 3 × 10 ⁻⁸ A (V _DS = 5.0 V) when the gate voltage V _G = 0V, and I _DS = 8 × 10 ⁻⁶ A when V _G = 5V. As a result, a normally-off characteristic was obtained.
In addition, the TFT which produced similarly using the sample (2)-(9) which prepared the channel layer in Example 1 also obtained the normally OFF characteristic.

  As described above, the semiconductor device according to the embodiment of the present invention can be efficiently manufactured with low energy and has good electrical performance.

It is a schematic sectional drawing which shows the structure of the semiconductor device which concerns on a present Example.

Explanation of symbols

DESCRIPTION OF SYMBOLS 10 Semiconductor device 12 Substrate 14 Gate electrode 16 Gate insulating film 18 Source electrode 20 Drain electrode 22 Semiconductor thin film

Claims (10)

In a method for manufacturing a semiconductor device having a semiconductor thin film layer, a gate insulating film, a source electrode, a drain electrode and a gate electrode on a substrate,
The following general formula I and general formula II
Zn (OR ¹ ) ₂ ... [I]
M (OR ² ) ₃ ... [II]
(In the formula, M is at least one element of aluminum, iron, indium and gallium, and the ratio Zn / M is in the range of 0.2 to 10. R ¹ and R ² may be the same or different. Well, it represents a substituted or unsubstituted alkyl group having 1 to 20 carbon atoms.)
Containing a metal alkoxide compound (the compounds represented by general formula I and general formula II may be partly linked to form a composite alkoxide), and have a viscosity of 1 to 100 mPa · s. Causing the metal alkoxide solution to be ejected toward the substrate by inkjet or dispenser;
Heating the metal alkoxide solution to form a semiconductor thin film layer;
A method for manufacturing a semiconductor device comprising: In the general formula II, M comprises aluminum, iron, at least two elements in the indium and gallium, a semiconductor device of claim 1, wherein the ratio of these is characterized in that in the range of 0.05 to 20 Manufacturing method. The method of manufacturing a semiconductor device according to claim 1 or claim 2 ratio Zn / M in the metal alkoxide solution is characterized in that it is a range of 0.2 to 1.5. The total concentration of Zn as M in the metal alkoxide solution, any one of claims 1 to 3, characterized in that 0.5 to 20% by weight, based on the total weight of the metal alkoxide solution Semiconductor device manufacturing method. Wherein the metal alkoxide solution further according to any one of claims 1 to 4 and the boiling point is represented by the following general formula III is characterized in that it comprises at least one high-boiling solvent 120 ° C. to 250 DEG ° C. Semiconductor device manufacturing method.
R ³ —OH ... [III]
(In the formula, R ³ represents a substituted or unsubstituted alkyl group, alkenyl group, cycloalkyl group or aryl group having 1 to 12 carbon atoms.) 6. The method of manufacturing a semiconductor device according to claim 1 , wherein the heating is performed by an infrared or ultraviolet laser. Discharging the insulating film forming solution toward the substrate by an ink jet method or a dispenser method;
The method for manufacturing a semiconductor device according to claim 1 , further comprising heating the solution for forming an insulating film to form the gate insulating film. Semiconductor device manufactured by the manufacturing method of the semi-conductor device according to any one of claims 1 to 7. 9. The semiconductor device according to claim 8 , wherein the semiconductor thin film layer is amorphous. 10. The semiconductor device according to claim 8 , wherein the substrate is made of plastic.

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