JP4755898B2 - Method for manufacturing cathode substrate and method for manufacturing display element - Google Patents

Description

The present invention relates to a method for manufacturing a manufacturing method and a display element of the cathode board, in particular, a cathode electrode, a manufacturing method of a cathode board for three-pole structure type display device having at least a gate electrode and an emitter and to a method for manufacturing a display element using this cathode substrate.

  In recent years, research and development of flat panel displays such as liquid crystal displays, light-emitting diodes, plasma display panels, and field emission displays (FEDs) have been promoted in place of conventionally used cathode ray tubes. Among them, the FED has been attracting attention because it can realize low power consumption, high image quality and high-speed response. When manufacturing this FED, a three-electrode structure type display element composed of a cathode substrate having at least a cathode electrode, a gate electrode and an emitter and an anode substrate having at least an anode electrode is often used.

The cathode substrate for the tripolar structure type display element will be described with reference to FIG. 5 (a) showing a sectional view of the cathode substrate for the tripolar structure type display element. A layer 13 and a gate electrode layer 14 are sequentially stacked, a gate hole 15 is formed in the gate electrode layer 14, an insulating layer hole 16 is formed under the gate hole 15, and a cathode exposed at the bottom of the insulating layer hole 16. It is known that an emitter 17 is formed on the surface of the electrode layer 12 (see, for example, Patent Document 1). Referring to FIG. 5B showing a top view of the cathode substrate, the cathode substrate manufactured in this way has one gate hole 15 having a diameter larger than the diameter of the emitter 17 with respect to one emitter 17. Is formed.
JP 2001-236879 (FIG. 6 etc.)

  However, in the above-described cathode substrate for a three-pole structure type element, since the gate electrode layer 14 exists obliquely above the emitter 17, a parallel electric field is not formed between the emitter and the gate electrode. When the driving voltage is applied and electrons are emitted from the emitter 17, the emitted electrons are not emitted right above but diffuse. For this reason, the FED using this three-pole structure type display element has a problem that the gap between the anode electrode and the cathode electrode cannot be made large and the luminance is limited.

  Therefore, for a three-pole structure type display element having a mesh-shaped gate electrode capable of forming an electric field parallel to the emitter and the gate electrode between the emitter and the gate electrode and emitting electrons directly from the emitter. Cathode substrates have been proposed. A cathode substrate having the mesh-shaped gate electrode will be described with reference to FIGS. 6 (a) and 6 (b). In FIG. 6, the same components as those in FIG. 5 are denoted by the same reference numerals. As shown in FIG. 6A, which is a cross-sectional view of the cathode substrate, the cathode substrate is formed by sequentially laminating a cathode electrode layer 12, an insulating layer 13, and a gate electrode layer 14 on a substrate 11, and then a gate electrode layer. A plurality of gate holes 15 are formed in 14, and then the insulating layer 13 is etched from each gate hole 15 by over-etching to form one insulating layer hole 16 and the cathode electrode layer 12 at the bottom of the insulating layer hole 16. And an emitter 17 is formed on the surface of the cathode electrode layer 12. As shown in FIG. 6B, which is a top view of the cathode substrate, the cathode substrate thus formed has a mesh-like gate electrode 14 immediately above one emitter 17. Thus, an electric field is formed parallel to the emitter. Compared with the cathode substrate shown in FIG. 5, the electron emission from the emitter converges better, but it is still not sufficient.

An object of the present invention, the located to conventional solve the problems of technology is to provide a method of making a cathode board for good triode structure type element electron convergence. Another object is to provide a method for manufacturing a display element using a cathode substrate for good triode structure type element electron convergence.

The cathode substrate manufacturing method of the present invention is a method for manufacturing a cathode substrate comprising at least a cathode electrode, a gate electrode having a gate hole region in which two or more gate holes are formed, an insulating layer, and an emitter on the substrate. Including a deformation step of heating and bending the gate electrode by heating at the time of emitter formation so that the equipotential surface formed between the gate electrode and the gate electrode becomes a convex surface for converging electrons emitted from the emitter. And According to the present invention, it is possible to produce a cathode substrate with good electron convergence. When the gate electrode is heated, the gate electrode bends from the center due to the weight of the gate electrode itself. Therefore, the curved portion can be easily formed in the gate electrode, and the curved portion is formed by heating at the time of forming the emitter. Therefore, it is possible to shorten the process time.

  Thus, it is preferable that the curvature radius of the curved portion formed by the deformation process is 1 to 3 times the radius of the gate hole region or half the length of one side of the gate hole region.

  Preferably, the method includes a step of forming a gate hole while leaving a region having a predetermined area in the gate hole region. By leaving the region where the gate hole is not formed, the insulating layer remains in a columnar shape under this region, and the columnar insulating layer can support the gate electrode horizontally with respect to the bottom surface of the substrate.

  The emitter is preferably formed from a carbon-based material formed on the catalyst layer by contacting a carbon-based material source gas with a catalyst layer formed on the cathode substrate.

  According to the method for manufacturing a display element of the present invention, after preparing a cathode substrate according to the above-described method for manufacturing a cathode substrate, the cathode substrate and an anode substrate including at least a phosphor layer, an anode electrode layer, and an upper substrate are supported. A display element is manufactured by bonding through a body. Since the cathode substrate fabrication method described above can produce a cathode substrate with good electron convergence, the display device fabrication method of the present invention can produce a display device with high charge injection efficiency to the anode electrode.

According to a method for manufacturing a mosquito cathode substrate of the present invention, an excellent effect of being able to produce a good cathode substrate electron convergence.

Further, according to the method for manufacturing a display element of the present invention, there is an excellent effect that a display element with high electron injection efficiency can be manufactured.

  In order to explain the first embodiment of the cathode substrate of the present invention, a schematic sectional view of the cathode substrate is shown in FIG.

  In the cathode substrate of the present invention, a cathode electrode layer 1 having a thickness of 50 to 300 nm is formed on a substrate S, and an insulating layer 2 having a thickness of 1 to 6 μm is formed on the cathode electrode layer 1. An insulating layer hole 3 is formed in the insulating layer 2, and the cathode electrode layer 1 is exposed at the bottom of the insulating layer hole 3. An emitter 4 is formed on the exposed surface of the cathode electrode layer 1. A mesh-shaped gate electrode 6 having a thickness of 50 to 300 nm having two or more gate holes 5 is formed on the insulating layer 2 so as to face the emitter 4.

  Each gate hole 5 is formed in a substantially square shape or a substantially circular shape. In the case of a substantially square shape, for example, if it is a square shape, the length of one side is formed in the range of 1 to 3 μm. In the case of a substantially circular shape, the diameter is formed in the range of 1 to 3 μm. These gate holes 5 are densely formed immediately above the insulating layer hole 3, preferably uniformly densely formed. A region where the gate holes 5 are densely formed is referred to as a gate hole region 7. This gate hole region has a substantially circular shape or a substantially square shape.

The interval between the gate holes 5 was set to be twice or less the thickness of the insulating layer 2. This is because if it exceeds twice, one insulating layer hole 3 cannot be formed in the insulating layer etching step described later. In order to form in this way, for example, each gate hole 5 is formed in a range of 0.5 to ² μm, and in a range of ^{2 to} 500 per dot (2500 to 40000 μm ² ). Is preferred.

  The total opening area of each gate hole 5 is preferably 50 to 90% with respect to the opening area of the insulating layer hole 3. Increasing or decreasing one of the opening area of each gate hole 5 and the number of gate holes can change the efficiency of charge injection into the anode substrate. When the total opening area of each gate hole 5 is less than 50%, the charge injection efficiency into the anode substrate is deteriorated, and on the other hand, when the opening area of each gate hole is large when it is larger than 90%, Electrons are drawn obliquely without the parallel electric fields, and the electrons diffuse. Moreover, it becomes easy to receive a minute difference in the shape of the emitter, and the electron emission from the emitter is not constant.

  When the gate electrode 6 as described in the prior art is parallel to the emitter, the equipotential surface formed between the gate electrode and the emitter is also parallel to the emitter and the gate electrode, and the electrons emitted from the emitter. Is easy to diffuse.

  Therefore, in the first embodiment of the cathode substrate of the present invention, the gate electrode 5 is formed so as to have a convex curved portion on the substrate side over the entire surface of the gate hole region 7. In this way, when a driving voltage is applied, the equipotential surface formed between the emitter and the gate electrode becomes a convex surface convex toward the substrate side, and the electric field converges electrons passing through this electric field. A cathode substrate that functions as a lens and has good electron convergence can be manufactured. In this case, the radius of curvature of the curved portion of the mesh-shaped gate electrode is preferably 1 to 3 times the radius A of the gate hole region or half A of the length of one side thereof. If it is less than 1 time, the focal point of the convex lens formed by the electric field becomes too close to the cathode electrode, and the electrons converge near the cathode electrode and then diffuse again. On the other hand, if the ratio is larger than three times, the focal point of the lens formed by the electric field is too far from the cathode electrode and hardly converges.

  In this embodiment, since the gate electrode has a curved portion, the equipotential surface formed between the emitter and the gate electrode serves as a convex surface to prevent diffusion of electrons, but it is formed between the emitter and the gate electrode. As long as the equipotential surface has a shape in which electrons are easily converged, a structure other than the curved portion may be used. For example, a truncated cone shape such as a mortar may be used. Even in the case of a mortar shape, the equipotential surface is formed as a convex surface, so that electrons tend to converge.

  A cathode substrate according to a second embodiment of the present invention will be described with reference to FIG. FIG. 2 is a cross-sectional view of the cathode substrate according to the second embodiment, and the same components as those in FIG. 1 are denoted by the same reference numerals.

  The second embodiment is different from the first embodiment in that a curved portion is not formed on the gate electrode 6 but a curved concave portion is formed on the film formation surface of the substrate S. On the top, the cathode electrode 1 and the emitter 4 are formed, and each surface is configured to have a recess. The recess is formed under a gate hole region formed to face the substrate. With this configuration, the equipotential surface formed between the emitter 4 and the gate electrode 6 becomes a convex surface convex toward the substrate side, and the electric field functions as a convex lens, so that electrons passing through the electric field can be converged. .

  In this case, the curvature radii of the curved surfaces of the cathode electrode 1 and the emitter 4 are preferably 1 to 3 times the radius A of the gate hole region 7 or the length A which is half of one side thereof.

In the second embodiment, in order to support the gate electrode, as shown in FIG. 3, a region 8 having a predetermined width in which the gate hole 5 is not formed is formed in the gate hole region 7, and this region 8 The gate electrode may be supported by leaving an insulating layer in the form of a column underneath. The region 8 having a predetermined width has a diameter that is less than or equal to twice the thickness of the insulating layer 2 when it is substantially circular, and has a side that is less than or equal to twice the thickness of the insulating layer 2 when it is approximately square.
In the second embodiment, the concave portion formed of a curved surface is formed on the film formation surface of the substrate S. However, the concave portion formed of a curved surface is not formed on the film formation surface of the substrate S but on the upper surface of the cathode electrode 1 on the substrate S. The emitter formed on the cathode electrode 1 may be configured to have a recess.

As the substrate, any substrate usually used in a display element may be used. For example, a substrate made of glass, silicon, or ceramic (for example, STO or BTO) can be used. The cathode electrode layer material may be any metal or alloy that is usually used as a cathode electrode material, for example, a metal selected from Cr, Mo, Cu, W, Al, and Nd, and an alloy containing at least one of these metals. Can be used. The insulating layer material may be any material that is normally used as an insulating layer, and for example, SiO ₂ or zirconia can be used. The gate electrode layer may be any metal or alloy that is usually used as a gate electrode layer, for example, a metal selected from Cr, Pd, Mo, Nd, Cu, W, and Al, or an alloy containing at least one of these metals. Can be used. The emitter may be a silicon-based emitter, but in the present invention, a carbon-based material such as a carbon nanotube or graphite nanofiber is preferable.

  Hereinafter, a method of manufacturing the cathode substrate according to the first embodiment of the present invention will be described.

First, an EB vapor deposition method in a vacuum of 5 × 10 ⁻⁴ Pa or lower, for example, Ar gas under a pressure of 0.67 Pa (flow rate 50 sccm), while heating the substrate in the range of 200 to 400 ° C. ) A cathode electrode layer is formed by sputtering or the like in an atmosphere. Next, the cathode electrode layer is patterned in a line shape.

On the patterned cathode electrode layer, while performing substrate heating in the range of 300 to 450 ° C., an EB vapor deposition method in a vacuum of 5 × 10 ⁻⁴ Pa or less, for example, Ar gas (flow rate under a pressure of 0.67 Pa) An insulating layer is formed by sputtering or the like in an atmosphere of 50 sccm). The reason for heating the substrate is to prevent damage to the insulating layer due to stress. When forming this insulating layer, in order to prevent pinholes due to dust adhering to the substrate, it is preferable to form the insulating layer twice or more, and then rub clean with pure water.

An EB deposition method in a vacuum of 5 × 10 ⁻⁴ Pa or less while heating the substrate at 200 to 400 ° C. on the insulating layer, or in an Ar gas (flow rate 50 sccm) atmosphere under a pressure of 0.67 Pa, for example. A gate electrode layer is formed by the sputtering method or the like. Next, a gate hole is formed by, for example, photolithography, applying a resist layer on the gate electrode, transferring a predetermined resist pattern onto the gate electrode layer, and performing wet etching or dry etching.

  An etchant such as hydrofluoric acid or buffered hydrofluoric acid is introduced from the gate hole to etch the insulating layer. Since the distance between each gate hole is not more than twice the thickness of the insulating layer, the openings formed under each gate hole are connected by side etching under each gate hole so that one insulating layer is formed. A hole is formed and the cathode electrode formed under the insulating layer is exposed.

Next, a deformation process of the gate electrode is performed so that the equipotential surface formed between the emitter and the gate electrode becomes a convex surface. As the deformation method, a known deformation method can be used. For example, a method of forming a curved portion having a predetermined radius of curvature by pressing from above the gate electrode, a method of forming a curved portion having a predetermined radius of curvature by blowing compressed gas, and a cathode by heating the gate electrode by its own weight Examples thereof include a method of forming a curved portion having a predetermined radius of curvature on the electrode side. Specifically, as a method of pressing from above the gate electrode, a non-raised cloth, a Teflon (registered trademark) sheet or the like is placed on the gate electrode so as not to damage the gate electrode, and the pressure is made uniform. And a method of pressing with a plate or the like. Moreover, as a method of spraying the compressed gas, a method of spraying a compressed gas such as N _{2 at} a target region of the gate region at a time can be mentioned. Also in this case, it is preferable to spray a gas by placing a non-raised cloth or a Teflon sheet on the gate electrode so as not to damage the gate electrode. As a heating method, the gate electrode is thermally deformed by heating at a temperature at which the resist does not change after etching the insulating layer. It is also possible to heat at a higher temperature by forming an emitter and heating in a vacuum or N ₂ atmosphere after resist stripping. You may perform press or spraying of compressed gas, performing this heating.

Thereafter, in order to form, for example, a carbon-based emitter on the exposed cathode electrode, an EB vapor deposition method using a gate hole in a vacuum of 5 × 10 ⁻⁴ Pa or less, for example, a pressure of 0. The film is formed by sputtering in an atmosphere of Ar gas (flow rate 50 sccm) under 67 Pa. The catalyst may be any metal or alloy that is usually used as a catalyst material in chemical vapor deposition, for example, at least one metal selected from Fe, Co, and Ni, or Invar, Inconel, Hastello, and Harbor. At least one type of alloy selected from alloys such as (alloy made of Co / Cr / Ni / W / Mo / Mn / C / Be / F) can be used. Thereafter, the resist layer on the gate electrode and the catalyst layer deposited on the resist layer are lifted off. Then, a known carbon-based material growth gas, for example, a gas composed of carbon monoxide (200 sccm) and hydrogen (200 sccm) is introduced at atmospheric pressure by a thermal CVD method, and a growth temperature: 400 to 700 ° C., a growth time. : The carbon-based material is grown on the catalyst layer under the condition of 5 to 60 minutes (the growth time depends on the height of the carbon-based emitter such as graphite nanofiber to be grown).

  Further, if the heating step for growing the carbon-based material as the emitter is performed under conditions of 600 ° C. or higher, it is possible to simultaneously deform the gate electrode while forming the carbon-based material.

A method for manufacturing a cathode substrate according to the second embodiment of the present invention will be described below. In the cathode substrate of the second embodiment, first, a concave portion having a curved surface is formed on the film formation surface of the substrate. This recess is formed by wet etching with hydrofluoric acid or buffered hydrofluoric acid or the like at the target site before forming the cathode electrode layer. Then, the electrodes and the insulating layer are formed thereon by the same procedure as the cathode substrate manufacturing method according to the first embodiment. That is, a cathode electrode, an insulating layer, and a gate electrode are formed, a gate hole is formed in the gate electrode, an insulating layer is etched from the gate hole by wet etching, and one insulating layer hole is formed by side etching from each gate hole. Form. Then, after a catalyst layer is formed on the cathode electrode exposed at the bottom of the insulating layer hole, a carbon-based material such as graphite nanofiber is formed on the catalyst layer by a thermal CVD method.
When the cathode substrate is formed in this manner, the cathode electrode and the emitter are formed along the shape of the recess of the substrate, and each has a recess. In addition, a cathode electrode is formed on the substrate without providing a recess in the substrate, and then a pattern is formed on the upper surface of the cathode electrode by a photolithography method, and a recess is formed by wet etching. An emitter is formed on the cathode electrode. It is also possible to form an emitter having a desired recess.

  As shown in FIG. 3, a gate hole is formed by leaving a region 8 having a predetermined area where the gate hole 5 is not formed in a part of the gate hole region 7, and the insulating layer (not shown) is etched. Thus, the gate electrode 6 may be supported by leaving an insulating layer in a columnar shape under the region 8 having a predetermined width.

  Next, a method for manufacturing a display element using these cathode substrates will be described.

  An anode substrate comprising a phosphor layer, an anode electrode layer, and an upper substrate is prepared by a known method. As a known method, for example, a transparent electrode layer made of ITO as an anode electrode layer is formed by sputtering on an upper substrate made of high strain point glass. Then, a black matrix pattern is formed on this transparent electrode by a sputtering method, and a phosphor for CRT (such as P22) or a phosphor developed for a low acceleration voltage is applied by screen printing or the like to fluoresce. A body layer is formed to produce an anode substrate.

  The anode substrate and the cathode substrate described above are bonded to each other through a support (for example, a rib having a height of 500 μm) so that the phosphor layer faces the gate electrode layer.

A cathode substrate according to the first embodiment of the present invention shown in FIG. 1 was produced. A cathode electrode layer 1 made of Cr with a thickness of 200 nm is formed on a substrate S made of product name CP-600V (manufactured by Central Glass Co., Ltd.) while heating the substrate at 300 ° C., and patterned into a line shape by lithography. After that, an insulating layer 2 made of SiO _{2 having a} thickness of 5 μm was formed on the cathode electrode layer 1 by sputtering. Next, a gate electrode layer 6 made of Cr having a thickness of 300 nm was formed by sputtering while heating the substrate at 300 ° C. After patterning the obtained gate electrode layer 6 into a line perpendicular to the cathode electrode layer 1 by a lithography method, each gate hole 5 is formed with a diameter of 2 μm in the gate hole region by a photolithography method, and the interval is 2 μm. The gate hole region 7 was substantially circular and had a diameter of 120 μm.

  Then, using the buffered hydrofluoric acid having a concentration of 15% as an etchant, the insulating layer 2 is etched, and the insulating layer 2 under each gate hole is side-etched (over-etched) by 4 μm, respectively. Insulating layers were connected together to form one insulating layer hole 4.

Thereafter, a catalyst layer (not shown) made of Invar having a thickness of 5 nm was formed by sputtering, and the resist and the catalyst layer on the resist were lifted off. Then, by thermal CVD, graphite nanofibers are grown on the catalyst layer under the conditions of growth temperature: 600 ° C., growth time: 20 minutes, and process gas ratio: CO / H ₂ = 1 to form the emitter 4, and the cathode substrate Produced. Due to the heating at the time of forming the emitter, the gate electrode layer is bent downward by its own weight, and a gate electrode having a curved portion with a curvature radius of 120 μm is formed.

  A rib having a height of 500 μm is provided on the gate electrode layer 6 of the tripolar structure type cathode substrate manufactured by the above process, and the cathode substrate and the anode substrate are arranged so that the phosphor layer faces the gate electrode layer. And a display element. When 60 V is applied to the gate electrode 6 of this display element and the emission of electrons from the emitter is confirmed by the light emission of the anode phosphor, excellent electron convergence characteristics can be obtained by spreading only about 0.4 mm per pixel. It was.

  For comparison, a cathode substrate having a conventional mesh-shaped gate electrode shown in FIG. 6 was prepared. A rib having a height of 500 μm is provided on the gate electrode layer of the three-electrode structure type cathode substrate, and the cathode substrate and the anode substrate are bonded together via the rib so that the phosphor layer faces the gate electrode layer. It was set as the element. When the electron emission from the emitter of this display element was confirmed, one pixel spread to about 0.6 mm and the electron convergence characteristics were not so good.

  Therefore, it was found that the cathode substrate of the present invention and the device using the cathode substrate converged the electron emission from the emitter as compared with the cathode substrate having the conventional mesh-shaped gate electrode.

In this example, the cathode substrate according to the second embodiment of the present invention shown in FIG. 2 was formed. First, after applying a resist on a substrate S having a product name CP-600V (manufactured by Central Glass Co., Ltd.), wet etching with hydrofluoric acid is performed to form a concave portion having a curved surface with a curvature radius of 120 μm on the film formation surface of the substrate. Formed. Next, a Cr cathode electrode layer 1 having a film thickness of 200 nm is formed by the same method as in Example 1, and after patterning in a line shape, SiO _{2 having a} film thickness of 5 μm is formed on the cathode electrode layer 1 by sputtering. An insulating layer 2 was formed, and a gate electrode layer 6 made of Cr having a thickness of 300 nm was formed. The obtained gate electrode layer 6 was patterned into a line perpendicular to the cathode electrode layer 1, and then each gate hole 5 was formed with a diameter of 2 μm by photolithography. The gate hole region 7 was formed to have a substantially square shape, and the length of one side thereof was 120 μm. In this case, a region 8 having a diameter of 6 μm was left in a part of the gate hole region.

  Then, using the buffered hydrofluoric acid having a concentration of 15% as an etchant, the insulating layer 2 is etched, each of the insulating layers 2 is side-etched by 4 μm, and the insulating layers are connected under each of the gate holes 5. An insulating layer hole 3 was formed, and the insulating layer was left in a columnar shape under the region 8 to support the gate electrode.

  An upper surface SEM photograph of the cathode substrate thus formed is shown in FIG. From the top view, it can be seen that no gate hole is formed in region 8. And the cross-sectional SEM photograph of this board | substrate is shown in FIG.4 (b). It can be seen that part of the insulating layer of each cathode substrate remains in a columnar shape and supports the gate electrode.

Thereafter, a catalyst layer made of Invar having a thickness of 5 nm is formed by sputtering, and the catalyst is grown by thermal CVD under the conditions of growth temperature: 550 ° C., growth time: 20 minutes, and process gas ratio: CO / H ₂ = 1. A cathode substrate was fabricated as an emitter 4 by growing graphite nanofibers on the layer.

  A rib having a height of 500 μm is provided on the gate electrode layer 3 of the tripolar structure type cathode substrate manufactured by the above process, and the cathode substrate and the anode substrate are arranged so that the phosphor layer faces the gate electrode layer. And a display element. When 60 V is applied to the gate electrode of this display element and the emission of electrons from the emitter is confirmed by the light emission of the anode phosphor, excellent electron convergence characteristics can be obtained only by spreading one pixel to 0.4 mm as in the first embodiment. Obtained.

  Since the cathode substrate for the three-pole structure type element of the present invention is excellent in electron convergence, the characteristics of the display element can be greatly improved. In addition, according to the method for manufacturing a cathode substrate of the present invention, this three-pole structure type cathode substrate can be easily manufactured. Further, the display element of the present invention using this cathode substrate can be easily manufactured and the performance of the display device can be improved. Therefore, the present invention can be used in the technical field of displays.

1 is a schematic cross-sectional view of a cathode substrate according to a first embodiment of the present invention. It is a typical sectional view of the cathode substrate concerning a 2nd embodiment of the present invention. FIG. 5 is a schematic top view of a cathode substrate according to a second embodiment of the present invention. (A) SEM photograph which shows the top view of the cathode substrate produced in Example 2, (b) SEM photograph which shows sectional drawing of the cathode substrate produced in Example 2. FIG. It is typical sectional drawing of the cathode substrate for 3 pole structure type elements of a prior art. It is typical sectional drawing of the cathode substrate for tripolar structure type | mold elements which has a mesh-shaped gate electrode of a prior art.

Explanation of symbols

S substrate 1 cathode electrode 2 insulating layer 3 insulating layer hole 4 emitter 5 gate hole 6 gate electrode 7 gate hole region 8 region of a predetermined area

Claims (5)

In a method for manufacturing a cathode substrate comprising at least a cathode electrode, a gate electrode having a gate hole region in which two or more gate holes are formed, an insulating layer, and an emitter on the substrate,
Including a deformation step in which the gate electrode is heated and heated to bend so that the equipotential surface formed between the emitter and the gate electrode becomes a convex surface for converging electrons emitted from the emitter. A method for producing a cathode substrate, which is characterized. The curvature radius of the curved portion formed by the deformation process, the cathode substrate according to claim 1, wherein the 1 to 3 times the half of the length of one side of the radius or gate hole region of the gate hole area Manufacturing method. 3. The method of manufacturing a cathode substrate according to claim 1, further comprising a step of forming a gate hole while leaving a region having a predetermined area in the gate hole region. It said emitter contacting a carbon-based material feedstock gas to the catalyst layer formed on the cathode substrate, in any one of claims 1 to 3, characterized in that to form a carbon-based material formed on the catalyst layer The manufacturing method of the cathode substrate as described. After preparing the cathode substrate according to the method for manufacturing a cathode substrate according to any one of claims 1 to 4, and the cathode substrate, a phosphor layer and an anode substrate comprising at least an anode electrode layer and the upper substrate, A display element manufacturing method, wherein a display element is manufactured by bonding through a support.