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JP4747368B2 - W-Ti target for sputtering for forming a W-Ti diffusion prevention film - Google Patents

W-Ti target for sputtering for forming a W-Ti diffusion prevention film Download PDF

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JP4747368B2
JP4747368B2 JP2007053862A JP2007053862A JP4747368B2 JP 4747368 B2 JP4747368 B2 JP 4747368B2 JP 2007053862 A JP2007053862 A JP 2007053862A JP 2007053862 A JP2007053862 A JP 2007053862A JP 4747368 B2 JP4747368 B2 JP 4747368B2
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diffusion prevention
prevention film
film
target
sputtering
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JP2008218693A (en
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孝典 白井
荘平 野中
幸也 杉内
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Mitsubishi Materials Corp
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    • H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
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Description

この発明は、半導体チップを基板に実装するためのバンプと下地電極の間に形成して金属間化合物の生成を防止するためのエッチングレートの高いＷ−Ｔｉ拡散防止膜を形成するためのスパッタリング用Ｗ−Ｔｉターゲットに関するものである。 This invention is for sputtering for forming a W-Ti diffusion prevention film having a high etching rate for preventing the formation of an intermetallic compound formed between a bump for mounting a semiconductor chip on a substrate and a base electrode. It relates to a W-Ti target.

近年、実装基板と半導体装置の結合にはフリップチップ実装が用いられている。フリップチップ実装ではＡｌ電極またはＣｕ層電極の上にメッキ法によりそれぞれＡｕバンプまたは半田バンプを形成している。しかし、ＡｕバンプとＡｌ電極とを直接接触させると、ＡｕとＡｌとが相互に拡散してＡｕとＡｌの金属間化合物が生成し、このＡｕとＡｌの金属間化合物が生成するとその部分の電気抵抗が上昇したり密着性が低下したりするので好ましくない。同様に、半田バンプとＣｕ層電極とを直接接触させると、半田バンプのＳｎとＣｕが反応してＳｎとＣｕの金属間化合物を生成し、その部分の電気抵抗が上昇したり密着性が低下したりするので好ましくない。このＡｕとＡｌの金属間化合物の生成を阻止するためにＡｕバンプとＡｌ電極との間にＷ−Ｔｉ拡散防止膜を形成し、またＳｎとＣｕの金属間化合物の生成を阻止するために半田バンプとＣｕ層電極の間にＷ−Ｔｉ拡散防止膜を形成している。
ここで、この従来のＷ−Ｔｉ拡散防止膜を形成してＡｕバンプを作製する方法を図面に基づいて一層具体的に説明する。まず、図１に示されるように、シリコン基板１の上のＡｌ電極２の上面のみが露出するようにパッシベーション膜（絶縁膜）３が形成されている半導体装置を用意し、この半導体装置のＡｌ電極２およびパッシベーション３の上に、図２に示されるように、全面にわたってＷ−Ｔｉ拡散防止膜４を形成する。このＷ−Ｔｉ拡散防止膜４の上に図３に示されるようにフォトレジスト膜５を形成し、次いで図４に示されるようにこのフォトレジスト膜５を露光して選択的に除去して窓６を形成する。この窓６にＡｕメッキを行って図５に示されるように窓６をＡｕメッキ層で充填したのち、図６に示されるようにフォトレジスト膜を除去し、さらにＷ−Ｔｉ拡散防止膜４をエッチングにより除去して図７に示されるようにＡｕバンプ７を形成する。
このＷ−Ｔｉ拡散防止膜４は一般にＷ−Ｔｉターゲットを用いてスパッタリングすることにより形成され、このＷ−Ｔｉターゲットは熱間静水圧プレス（ＨＩＰ）または真空ホットプレスなどの方法により製造されることが知られている。そして、前記Ｗ−Ｔｉターゲットには不可避不純物としてＮａ，Ｋ，Ｍｇ，Ａｌ，Ｆｅ，Ｎｉ，Ｃｕ、Ｏなどが含まれていることが知られており、例えば、特許文献１にはＮａ：１ｐｐｍ，Ｋ：１ｐｐｍ，Ｍｇ：６ｐｐｍ，Ａｌ：１５ｐｐｍ，Ｆｅ：２０ｐｐｍ，Ｎｉ：１０ｐｐｍ，Ｃｕ：１ｐｐｍ、Ｏ：１０００ｐｐｍが含まれているＷ−Ｔｉ膜を形成するためのＷ−Ｔｉターゲットが例示されている。
特開平５−５１７３２号公報 In recent years, flip chip mounting has been used for coupling a mounting substrate and a semiconductor device. In flip-chip mounting, Au bumps or solder bumps are formed on an Al electrode or Cu layer electrode by plating. However, when the Au bump and the Al electrode are in direct contact with each other, Au and Al diffuse to each other to form an intermetallic compound of Au and Al. This is not preferable because the resistance increases or the adhesion decreases. Similarly, when the solder bump and the Cu layer electrode are brought into direct contact, Sn and Cu of the solder bump react to generate an intermetallic compound of Sn and Cu, and the electrical resistance of the portion increases or the adhesion decreases. This is not preferable. In order to prevent the formation of the intermetallic compound of Au and Al, a W-Ti diffusion prevention film is formed between the Au bump and the Al electrode, and in order to prevent the formation of the intermetallic compound of Sn and Cu, solder is formed. A W-Ti diffusion preventing film is formed between the bump and the Cu layer electrode.
Here, the conventional method of forming the Au bump by forming the W-Ti diffusion preventing film will be described more specifically with reference to the drawings. First, as shown in FIG. 1, a semiconductor device is prepared in which a passivation film (insulating film) 3 is formed so that only the upper surface of the Al electrode 2 on the silicon substrate 1 is exposed. On the electrode 2 and the passivation 3, as shown in FIG. 2, a W—Ti diffusion preventing film 4 is formed over the entire surface. A photoresist film 5 is formed on the W-Ti diffusion prevention film 4 as shown in FIG. 3, and then the photoresist film 5 is exposed and selectively removed as shown in FIG. 6 is formed. After Au plating is performed on the window 6 and the window 6 is filled with the Au plating layer as shown in FIG. 5, the photoresist film is removed as shown in FIG. 6, and the W—Ti diffusion preventing film 4 is further formed. By removing by etching, Au bumps 7 are formed as shown in FIG.
The W-Ti diffusion prevention film 4 is generally formed by sputtering using a W-Ti target, and the W-Ti target is manufactured by a method such as hot isostatic pressing (HIP) or vacuum hot pressing. It has been known. The W-Ti target is known to contain Na, K, Mg, Al, Fe, Ni, Cu, O, etc. as inevitable impurities. For example, Patent Document 1 discloses Na: 1 ppm. , K: 1 ppm, Mg: 6 ppm, Al: 15 ppm, Fe: 20 ppm, Ni: 10 ppm, Cu: 1 ppm, O: 1000 ppm W-Ti target for forming a W-Ti film is illustrated Yes.
JP-A-5-51732

前述のように、Ａｌ電極２およびパッシベーション３の全面に被覆したＷ−Ｔｉ拡散防止膜４はＡｕバンプ７を形成したのち、図７に示されるように、最終的にＡｕバンプ７に接するＷ−Ｔｉ拡散防止膜４を除くすべてのＷ−Ｔｉ拡散防止膜４はエッチングにより除去しなければならない。しかし、このＷ−Ｔｉ拡散防止膜４はエッチングレートが遅いことで知られており、そのために生産効率が悪いという問題点があった。   As described above, the W-Ti diffusion prevention film 4 coated on the entire surface of the Al electrode 2 and the passivation 3 forms the Au bump 7, and as shown in FIG. All the W-Ti diffusion prevention films 4 except for the Ti diffusion prevention film 4 must be removed by etching. However, this W—Ti diffusion prevention film 4 is known to have a slow etching rate, and there is a problem in that the production efficiency is poor.

そこで、本発明者らは、エッチングレートの早いＷ−Ｔｉ拡散防止膜を開発し、Ａｕバンプまたは半田バンプの作製時間を短縮して生産効率を上げるべく研究を行なった。その結果、Ｆｅを２５〜１００ｐｐｍ含むＷ−Ｔｉ拡散防止膜は従来のＷ−Ｔｉ拡散防止膜に比べてエッチングレートが早くなり、このＦｅを２５〜１００ｐｐｍ含むＷ−Ｔｉ拡散防止膜はＦｅを２５〜１００ｐｐｍ含むＷ−Ｔｉターゲットを用いてスパッタリングすることにより形成することができる、という知見を得たのである。   Therefore, the present inventors have developed a W-Ti diffusion prevention film having a high etching rate, and conducted research to increase the production efficiency by shortening the production time of Au bumps or solder bumps. As a result, the W-Ti diffusion prevention film containing 25 to 100 ppm of Fe has a higher etching rate than the conventional W-Ti diffusion prevention film, and this W-Ti diffusion prevention film containing 25 to 100 ppm of Fe contains 25 Fe. It was found that it can be formed by sputtering using a W—Ti target containing ˜100 ppm.

この発明は、かかる知見に基づいて成されたものであって、
Ｔｉ：５〜２０質量％、Ｆｅ：２５〜１００ｐｐｍを含有し、残部がＷおよび不可避不純物からなる組成を有するエッチングレートの高いＷ−Ｔｉ拡散防止膜を形成するためのスパッタリング用ターゲット、に特徴を有するものである。
This invention is made based on such knowledge,
T i: 5 to 20 wt%, Fe: contains 25～100Ppm, balance sputtering target for forming a high W-Ti diffusion preventing film etching rate having a composition is made of W and unavoidable impurities, the characteristics It is what has.

この発明のエッチングレートの高いＷ−Ｔｉ拡散防止膜において、Ｔｉ：５〜２０質量％に限定した理由は、Ｔｉが５質量％未満ではＡｌ配線や周囲の保護膜との密着性が十分でなく好ましくないからであり、一方、Ｔｉが２０質量％を越えて含有すると、電気抵抗が高くなりすぎる上にさらにバリア性も低下するようになるので好ましくないことによるものである。Ｗ−Ｔｉ拡散防止膜に含まれるＴｉ：５〜２０質量％はすでに知られている範囲であるが、この発明のＷ−Ｔｉ拡散防止膜においてＴｉ含有量の一層好ましい範囲は８〜１５質量％である。   In the W-Ti diffusion prevention film having a high etching rate according to the present invention, the reason for limiting Ti to 5 to 20% by mass is that when Ti is less than 5% by mass, the adhesion to the Al wiring and the surrounding protective film is not sufficient. On the other hand, if the Ti content exceeds 20% by mass, the electric resistance becomes too high and the barrier property is further lowered, which is not preferable. Ti contained in the W-Ti diffusion prevention film is 5 to 20% by mass, which is already known, but in the W-Ti diffusion prevention film of the present invention, a more preferable range of Ti content is 8 to 15% by mass. It is.

この発明のエッチングレートの高いＷ−Ｔｉ拡散防止膜に含まれるＦｅを２５〜１００ｐｐｍに限定した理由は、Ｆｅが２５ｐｐｍ未満ではエッチングレートを十分に高めることができないので好ましくなく、一方、Ｆｅを１００ｐｐｍを越えて含むと、ＡｌとＡｕの間の十分な拡散バリア性を有するＷ−Ｔｉ拡散防止膜が得られないので好ましくないことによるものである。   The reason why Fe contained in the W-Ti diffusion prevention film having a high etching rate of the present invention is limited to 25 to 100 ppm is not preferable because the etching rate cannot be sufficiently increased when Fe is less than 25 ppm, while Fe is 100 ppm. This is because it is not preferable because a W—Ti diffusion preventing film having a sufficient diffusion barrier property between Al and Au cannot be obtained.

この発明のエッチングレートの高いＷ−Ｔｉ拡散防止膜はＷ−Ｔｉターゲットを用い、スパッタすることにより形成することができ、このＷ−Ｔｉ拡散防止膜形成用Ｗ−Ｔｉターゲットを製造するには、原料粉末として、平均粒径：１〜４０μｍのＴｉ粉末、平均粒径：０．５〜２０μｍのＷ粉末、平均粒径：５０〜１５０μｍのＦｅ粉末を用意し、これら原料粉末を質量％で、Ｔｉ：５〜２０質量％、Ｆｅ：２５〜１００ｐｐｍを含有し、残部がＷおよび不可避不純物からなる組成を有するように秤量し、混合して混合粉末を作製し、得られた混合粉末をグラファイト製モールドに充填し、圧力：１０〜４０ＭＰａ、温度：１０００〜１５００℃の条件で真空ホットプレスすることにより焼結体を作製し、得られた焼結体を所定の形状に機械加工することにより製造する。   The W-Ti diffusion prevention film having a high etching rate according to the present invention can be formed by sputtering using a W-Ti target. To produce this W-Ti target for forming a W-Ti diffusion prevention film, As a raw material powder, an average particle size: Ti powder of 1 to 40 μm, an average particle size: W powder of 0.5 to 20 μm, an average particle size: Fe powder of 50 to 150 μm, these raw material powders in mass%, Ti: 5 to 20% by mass, Fe: 25 to 100 ppm, the balance is weighed so as to have a composition composed of W and inevitable impurities, mixed to prepare a mixed powder, and the obtained mixed powder is made of graphite A sintered body is prepared by filling in a mold and vacuum hot pressing under conditions of pressure: 10 to 40 MPa and temperature: 1000 to 1500 ° C., and the obtained sintered body is machined into a predetermined shape. Produced by doing this.

この発明のＷ−Ｔｉ拡散防止膜は従来のＷ−Ｔｉ拡散防止膜に比べてエッチングレートの高いことからＷ−Ｔｉ拡散防止膜のエッチングによる除去速度を速めることができ、したがってＡｕバンプまたは半田バンプの形成を早めて生産効率をあげることができるので半導体産業の発展に大いに貢献し得るものである。   Since the W-Ti diffusion prevention film of the present invention has a higher etching rate than the conventional W-Ti diffusion prevention film, the removal rate of the W-Ti diffusion prevention film by etching can be increased. This can contribute to the development of the semiconductor industry because the production efficiency can be increased by speeding up the formation of the semiconductor.

原料粉末として、純度：９９．９９９％を有し平均粒径：１５μｍを有するＴｉ粉末、純度：９９．９９９％を有し平均粒径：１μｍを有するＷ粉末、純度：９９．９９９％を有し平均粒径：１００μｍを有するＦｅ粉末を用意した。これら原料粉末を表１に示される割合で配合し、ボールミルに充填して混合し、得られた混合粉末をグラファイト製モールドに充填し、圧力：１５ＭＰａ、温度：１２００℃、３時間保持の条件で真空ホットプレスすることによりホットプレス焼結体を作製し、得られたホットプレス焼結体を機械加工して直径：１５２．４ｍｍ、厚さ：６ｍｍを有し、表１に示される成分組成を有するＷ−ＴｉターゲットＡ〜Ｇを作製した。   Ti powder having purity: 99.999% and average particle size: 15 μm, W powder having purity: 99.999% and average particle size: 1 μm, purity: 99.999% An Fe powder having an average particle size of 100 μm was prepared. These raw material powders are blended in the proportions shown in Table 1, filled in a ball mill and mixed, and the resulting mixed powder is filled into a graphite mold, under the conditions of pressure: 15 MPa, temperature: 1200 ° C., and holding for 3 hours. A hot press sintered body was prepared by vacuum hot pressing, and the obtained hot press sintered body was machined to have a diameter: 152.4 mm, a thickness: 6 mm, and the composition shown in Table 1 W-Ti targets A to G having these were produced.

Figure 0004747368
Figure 0004747368

次に、これらＷ−ＴｉターゲットＡ〜Ｇを厚さ：１０ｍｍの無酸素銅製冷却板にＩｎはんだを用いてはんだ付けしたのち、通常の高周波マグネトロンスパッタ装置に取り付け、下記の条件、
基板：縦：１８ｍｍ、横：１８ｍｍを有するガラス板、
基板とターゲットとの距離：６０ｍｍ、
電力：直流４００Ｗ、
雰囲気：Ａｒ雰囲気（０．６４Ｐａ）、
基板温度：室温、
にてスパッタリングすることにより前記基板であるガラス板上に表２に示される厚さの本発明Ｗ−Ｔｉ薄膜１〜５、比較Ｗ−Ｔｉ薄膜１および従来Ｗ−Ｔｉ薄膜１を形成し、これらＷ−Ｔｉ薄膜を過酸化水素水に１２０秒浸漬したのち取り出してＷ−Ｔｉ薄膜の膜厚を測定し、得られた測定値からエッチングレートを計算して求め、その結果を表２に示した。 Next, after these W-Ti targets A to G are soldered to an oxygen-free copper cooling plate having a thickness of 10 mm using In solder, they are attached to a normal high-frequency magnetron sputtering apparatus, and the following conditions are satisfied:
Substrate: glass plate having length: 18 mm, width: 18 mm,
Distance between substrate and target: 60mm,
Power: DC 400W,
Atmosphere: Ar atmosphere (0.64 Pa),
Substrate temperature: room temperature,
The present invention W-Ti thin films 1 to 5, the comparative W-Ti thin film 1 and the conventional W-Ti thin film 1 having the thicknesses shown in Table 2 are formed on the glass plate as the substrate by sputtering at The W-Ti thin film was immersed in hydrogen peroxide solution for 120 seconds and then taken out, the thickness of the W-Ti thin film was measured, and the etching rate was calculated from the obtained measured value. The results are shown in Table 2. .

Figure 0004747368
Figure 0004747368

表２に示される結果から、本発明Ｗ−Ｔｉ薄膜１〜５は、従来Ｗ−Ｔｉ薄膜１に比べてエッチングレートが格段に優れていることが分かる。   From the results shown in Table 2, it can be seen that the W-Ti thin films 1 to 5 of the present invention have a much better etching rate than the conventional W-Ti thin film 1.

Ａｕバンプを作製するまでの工程を説明するための説明図である。It is explanatory drawing for demonstrating the process until it produces Au bump. Ａｕバンプを作製するまでの工程を説明するための説明図である。It is explanatory drawing for demonstrating the process until it produces Au bump. Ａｕバンプを作製するまでの工程を説明するための説明図である。It is explanatory drawing for demonstrating the process until it produces Au bump. Ａｕバンプを作製するまでの工程を説明するための説明図である。It is explanatory drawing for demonstrating the process until it produces Au bump. Ａｕバンプを作製するまでの工程を説明するための説明図である。It is explanatory drawing for demonstrating the process until it produces Au bump. Ａｕバンプを作製するまでの工程を説明するための説明図である。It is explanatory drawing for demonstrating the process until it produces Au bump. Ａｕバンプを作製するまでの工程を説明するための説明図である。It is explanatory drawing for demonstrating the process until it produces Au bump.

符号の説明Explanation of symbols

１：シリコン基板、２：Ａｌ電極、３：パッシベーション、４：Ｗ−Ｔｉ拡散防止膜、５：フォトレジスト膜、６：窓、７：Ａｕバンプ 1: silicon substrate, 2: Al electrode, 3: passivation, 4: W-Ti diffusion prevention film, 5: photoresist film, 6: window, 7: Au bump

Claims (1)

平均粒径：１〜４０μｍのＴｉ粉末、平均粒径：０．５〜２０μｍのＷ粉末および平均粒径：５０〜１５０μｍのＦｅ粉末を混合し、該混合粉末を焼結して作成された焼結体であり、Ｔｉ：５〜２０質量％、Ｆｅ：２５〜１００ｐｐｍを含有し、残部がＷおよび不可避不純物からなる組成を有することを特徴とするエッチングレートの高いＷ−Ｔｉ拡散防止膜を形成するためのスパッタリング用ターゲット。 An average particle diameter: 1 to 40 μm Ti powder, an average particle diameter: 0.5 to 20 μm W powder, and an average particle diameter: 50 to 150 μm Fe powder are mixed and sintered. a sintered body, Ti: 5 to 20 wt%, Fe: contains 25～100Ppm, form a highly W-Ti diffusion preventing film etching rate and having the balance consisting of W and unavoidable impurities Sputtering target to do.
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KR20160133571A (en) 2014-10-08 2016-11-22 미쓰비시 마테리알 가부시키가이샤 W-ti sputtering target
CN111155061A (en) * 2018-11-07 2020-05-15 宁波江丰电子材料股份有限公司 Preparation method of WTi alloy target
KR20200119348A (en) 2018-11-06 2020-10-19 미쓰비시 마테리알 가부시키가이샤 W-Ti sputtering target

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JP5533544B2 (en) * 2010-10-16 2014-06-25 三菱マテリアル株式会社 W-Ti diffusion preventing film and sputtering target for forming W-Ti diffusion preventing film

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JPH0551732A (en) * 1991-03-19 1993-03-02 Mitsubishi Materials Corp Target for sputtering and production thereof
JPH05295531A (en) * 1992-04-21 1993-11-09 Toshiba Corp Ti-w based sputtering target and its production
JP4722532B2 (en) * 2005-04-07 2011-07-13 シャープ株式会社 SEMICONDUCTOR DEVICE, ELECTRONIC DEVICE, AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20160133571A (en) 2014-10-08 2016-11-22 미쓰비시 마테리알 가부시키가이샤 W-ti sputtering target
KR20200119348A (en) 2018-11-06 2020-10-19 미쓰비시 마테리알 가부시키가이샤 W-Ti sputtering target
CN111155061A (en) * 2018-11-07 2020-05-15 宁波江丰电子材料股份有限公司 Preparation method of WTi alloy target

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