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JP4744502B2 - Atom capture element - Google Patents

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JP4744502B2
JP4744502B2 JP2007310134A JP2007310134A JP4744502B2 JP 4744502 B2 JP4744502 B2 JP 4744502B2 JP 2007310134 A JP2007310134 A JP 2007310134A JP 2007310134 A JP2007310134 A JP 2007310134A JP 4744502 B2 JP4744502 B2 JP 4744502B2
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JP2009131931A (en
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哲哉 向井
富士夫 清水
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Nippon Telegraph and Telephone Corp
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Description

本発明は、量子状態の変換，及び記憶・制御手段としての応用が可能となる、原子を捕捉する原子捕捉素子に関するものである。   The present invention relates to an atom trapping element for trapping atoms, which can be applied as quantum state conversion and storage / control means.

磁気モーメントがゼロでない原子は、磁場の勾配から力を受ける。従って、磁場の強いところでエネルギーが高くなる原子（中性原子）は、３次元的な極小点を持つ不均一磁場中に置くことで、空間的に閉じ込めることができる。例えば、固体（基板）の表面に微細な配線パターンを形成し、この配線を流れる電流の周りに発生する磁場により、原子を捕捉するマイクロ磁場トラップの技術が開発され、原子の捕捉を実現している（非特許文献１参照）   An atom with a non-zero magnetic moment receives force from the gradient of the magnetic field. Therefore, an atom (neutral atom) whose energy becomes high in a strong magnetic field can be spatially confined by placing it in a non-uniform magnetic field having a three-dimensional minimum point. For example, a micro magnetic field trap technology has been developed that captures atoms by forming a fine wiring pattern on the surface of a solid (substrate) and capturing the atoms using a magnetic field generated around the current flowing through the wiring. (See Non-Patent Document 1)

このようなマイクロ磁場トラップによって単一の原子を捕捉する強い閉じ込めを実現するためには、トラップの中心を電流に近づける必要がある。しかしながら、原子の捕捉中心を電流に近づけると、電流を流している配線が形成されている素子からの熱雑音，電流雑音，及び配線自身の不均一な組成などが問題となり、原子の捕捉寿命が著しく低下することが知られている（例えば、非特許文献２参照）。   In order to realize strong confinement in which a single atom is captured by such a micro magnetic field trap, it is necessary to bring the trap center close to the current. However, if the trapping center of the atom is brought close to the current, thermal noise from the element in which the current-carrying wiring is formed, current noise, and a non-uniform composition of the wiring itself become problems, and the trapping life of the atom is reduced. It is known that it significantly decreases (see Non-Patent Document 2, for example).

上述した問題を解消する技術として、超伝導永久電流により発生する磁場と、これとは異なり外部から印加する磁場とにより原子を捕捉する方法が提案されている（非特許文献３参照）。   As a technique for solving the above-described problem, a method has been proposed in which atoms are captured by a magnetic field generated by a superconducting permanent current and a magnetic field applied from the outside (see Non-Patent Document 3).

本発明に係る原子捕捉素子は、超伝導体から構成された超伝導体薄膜と、この超伝導体薄膜に形成された屈曲部と、超伝導体薄膜の屈曲部に形成された開口部と、この開口部の縁に超伝導永久電流が流れる状態とする超伝導電流生成手段とを少なくとも備え、開口部の縁により立体的なループ回路が形成されるようにしたものである。開口部の縁に形成される立体的なループ回路に超伝導永久電流が流れることにより発生する磁場により、原子が捕捉される。 An atom trapping element according to the present invention includes a superconductor thin film composed of a superconductor, a bent portion formed in the superconductor thin film, an opening formed in a bent portion of the superconductor thin film, comprising at least a superconducting current generating means into a state where the superconducting persistent current flows through the edge of the opening, in which three-dimensional loop circuit is in so that formed by an edge of the opening. Atoms are captured by a magnetic field generated by a superconducting permanent current flowing through a three-dimensional loop circuit formed at the edge of the opening.

しかしながら、上述した従来の原子捕捉素子では、超伝導永久電流を２次元平面内に流れるようにしているため、発生させることのできる磁場の形状（領域）が限られ、より効率的に原子の捕捉をすることができなかった。   However, in the conventional atom trapping element described above, since the superconducting permanent current flows in the two-dimensional plane, the shape (region) of the magnetic field that can be generated is limited, and the atoms can be trapped more efficiently. I could not do it.

本発明は、以上のような問題点を解消するためになされたものであり、原子の閉じ込めをより効率的に行えるようにすることを目的とする。   The present invention has been made to solve the above-described problems, and an object of the present invention is to enable more efficient confinement of atoms.

本発明に係る原子捕捉素子は、超伝導体から構成された超伝導体薄膜と、この超伝導体薄膜に形成された屈曲部と、超伝導体薄膜の屈曲部に形成された開口部と、この開口部の縁に超伝導永久電流が流れる状態とする超伝導電流生成手段とを少なくとも備えるようにしたものである。開口部の縁に形成される立体的なループ回路に超伝導永久電流が流れることにより発生する磁場により、原子が捕捉される。   An atom trapping element according to the present invention includes a superconductor thin film composed of a superconductor, a bent portion formed in the superconductor thin film, an opening formed in a bent portion of the superconductor thin film, Superconducting current generation means for allowing a superconducting permanent current to flow at the edge of the opening is provided at least. Atoms are captured by a magnetic field generated by a superconducting permanent current flowing through a three-dimensional loop circuit formed at the edge of the opening.

上記原子捕捉素子において、超伝導体薄膜の屈曲部に形成された複数の開口部を備えるようにしてもよい。なお、超伝導体薄膜は、表面に凸部を備えた基板の凸部を含めた基板の表面に形成されて、凸部の上の超伝導体薄膜の部分が屈曲部とされ、開口部は、凸部の上の超伝導体薄膜に形成され、超伝導体薄膜の開口部が形成されている凸部の領域は除去されているようにしてもよい。また、超伝導体薄膜は、表面に凹部を備えた基板の凹部を含めた基板の表面に形成されて、凹部の上の超伝導体薄膜の部分が屈曲部とされ、開口部は、凹部の上の超伝導体薄膜に形成されているようにしてもよい。   The atom trapping element may include a plurality of openings formed in a bent portion of the superconductor thin film. The superconductor thin film is formed on the surface of the substrate including the convex portion of the substrate having a convex portion on the surface, the portion of the superconductor thin film on the convex portion is a bent portion, and the opening is The region of the convex portion formed in the superconducting thin film on the convex portion and having the opening of the superconductor thin film may be removed. In addition, the superconductor thin film is formed on the surface of the substrate including the concave portion of the substrate having a concave portion on the surface, the portion of the superconductor thin film on the concave portion is a bent portion, and the opening portion is the concave portion. It may be formed in the upper superconductor thin film.

また、上記、原子捕捉素子において、超伝導電流生成手段は、開口部を貫く磁場を発生する磁場発生手段と、超伝導体薄膜を超伝導転移温度に制御する冷却手段とを備えるようにしてもよい。また、超伝導電流生成手段は、超伝導体薄膜を超伝導転移温度に冷却する冷却手段と、開口部の縁の一部の加熱領域を加熱する加熱手段と、加熱領域を挟むように開口部の縁に接続して電流を印加する電流印加手段とを備えるようにしてもよい。   Further, in the above-described atom trapping element, the superconducting current generating means may include a magnetic field generating means for generating a magnetic field penetrating the opening and a cooling means for controlling the superconductor thin film to a superconducting transition temperature. Good. Further, the superconducting current generating means includes a cooling means for cooling the superconductor thin film to a superconducting transition temperature, a heating means for heating a part of the heating area at the edge of the opening, and the opening so as to sandwich the heating area. And a current applying means for applying a current connected to the edge.

以上説明したように、本発明によれば、超伝導体薄膜に形成された屈曲部に開口部を形成し、開口部の縁に超伝導永久電流が流れる状態とすることで、原子を捕捉するようにしたので、立体的な空間で原子を捕捉できるようになり、原子の閉じ込めがより効率的に行えるようになるという優れた効果が得られる。   As described above, according to the present invention, the opening is formed in the bent portion formed in the superconductor thin film, and the superconducting permanent current flows in the edge of the opening, thereby capturing the atoms. As a result, atoms can be captured in a three-dimensional space, and an excellent effect can be obtained in that atoms can be confined more efficiently.

以下、本発明の実施の形態について図を参照して説明する。図１は、本発明の実施の形態における原子捕捉素子の構成例を示す構成図，図２は、図１の一部を拡大して示す斜視図である。この原子捕捉素子は、まず、凸部１０２を備える基板１０１と、凸部１０２を含めた基板１０１の表面に形成され超伝導体薄膜１０３と、凸部１０２の上に形成されることで超伝導体薄膜１０３に形成された屈曲部１０４と、超伝導体薄膜１０３の屈曲部１０４に形成された開口部１０５と、超伝導体薄膜１０３の開口部１０５が形成されている部分の凸部１０２が除去された除去領域１０６とを備えている。   Hereinafter, embodiments of the present invention will be described with reference to the drawings. FIG. 1 is a configuration diagram showing a configuration example of an atom trapping element according to an embodiment of the present invention, and FIG. 2 is an enlarged perspective view showing a part of FIG. The atom trapping element is superconductive by first being formed on the substrate 101 having the convex portion 102, the superconductor thin film 103 formed on the surface of the substrate 101 including the convex portion 102, and the convex portion 102. A bent portion 104 formed in the body thin film 103, an opening 105 formed in the bent portion 104 of the superconductor thin film 103, and a convex portion 102 where the opening 105 of the superconductor thin film 103 is formed. And a removed region 106 that has been removed.

また、本実施の形態では、超伝導体薄膜１０３を超伝導転移温度に冷却する冷却機構１１１と、超伝導体薄膜１０３の開口部１０５を貫く磁場（矢視線）を発生する磁場発生部１１２とを備えている。   Further, in the present embodiment, a cooling mechanism 111 that cools the superconductor thin film 103 to the superconducting transition temperature, and a magnetic field generator 112 that generates a magnetic field (arrow line) that penetrates the opening 105 of the superconductor thin film 103; It has.

本実施の形態では、凸部１０２は、高さ及び幅が１００μｍ程度に形成され、開口部１０５は、凸部１０２の延在方向の寸法が１００μｍ程度とされている。また、基板１０１は、例えば、Ａｌ2Ｏ3の結晶基板である。また、超伝導体薄膜１０３は、例えば、ホウ化マグネシウム（ＭｇＢ2）からなり、膜厚１μｍ程度に形成されている。また、冷却機構１１１は、例えば、液体ヘリウムなどを用いるクライオスタットであり、超伝導体薄膜１０３を超伝導転移温度（Ｔｃ）以下まで冷却可能とされている。 In the present embodiment, the convex portion 102 is formed with a height and width of about 100 μm, and the opening 105 has a dimension in the extending direction of the convex portion 102 of about 100 μm. The substrate 101 is, for example, an Al 2 O 3 crystal substrate. The superconductor thin film 103 is made of, for example, magnesium boride (MgB 2 ) and has a thickness of about 1 μm. The cooling mechanism 111 is a cryostat using, for example, liquid helium, and can cool the superconductor thin film 103 to a superconducting transition temperature (Tc) or lower.

本実施の形態における原子捕捉素子によれば、超伝導体薄膜１０３の屈曲部１０４に形成された開口部１０５においては、開口部１０５の縁の部分に、図３の斜視図に示すように、３次元的な構造のループ回路配線３０１が形成された状態となっている。本実施の形態では、開口部１０５の縁により、１辺が１００μｍ程度の立体（立方体）が形成されている状態となっている。ループ回路配線３０１には、超伝導永久電流を流すことができ、ループ回路配線３０１に超伝導永久電流が流れることで発生する磁場は、３次元的な磁場の極小点を備えるようになる。   According to the atom trapping element in the present embodiment, in the opening 105 formed in the bent portion 104 of the superconductor thin film 103, as shown in the perspective view of FIG. A loop circuit wiring 301 having a three-dimensional structure is formed. In this embodiment, the edge of the opening 105 forms a solid (cube) having a side of about 100 μm. A superconducting permanent current can flow through the loop circuit wiring 301, and a magnetic field generated by the superconducting permanent current flowing through the loop circuit wiring 301 has a three-dimensional magnetic field minimum point.

超伝導永久電流が流れる開口部１０５の縁の部分（ループ回路配線３０１）には、例えば、基板１０１の平面に平行な断面においては、図４及び図５に示すように磁場が形成される。図４において、磁場の強度を等磁場線として表示し、中央の線が磁場の最も弱いところを示している。図４では、ループ回路配線３０１の互いに平行な４つの配線部分の中央部が、磁場の極小点であることを示している。また、図５では、図３に示すループ回路配線３０１の重心を通る水平面内の磁場（配線部分を横切らない）の変化を示し、１００μｍ離れた２つの配線部分の中央部が、磁場の極小点であることを示している。   For example, in the cross section parallel to the plane of the substrate 101, a magnetic field is formed in the edge portion (loop circuit wiring 301) of the opening 105 through which the superconducting permanent current flows, as shown in FIGS. In FIG. 4, the intensity of the magnetic field is displayed as an isomagnetic line, and the center line indicates the weakest magnetic field. FIG. 4 shows that the central portion of the four wiring portions parallel to each other of the loop circuit wiring 301 is the minimum point of the magnetic field. FIG. 5 shows the change of the magnetic field in the horizontal plane passing through the center of gravity of the loop circuit wiring 301 shown in FIG. 3 (does not cross the wiring part), and the central part of the two wiring parts separated by 100 μm is the minimum point of the magnetic field. It is shown that.

このように、ループ回路配線３０１の中央部に磁場の極小点が形成されるようになり、この磁場の極小点の領域が磁場トラップ（原子捕捉手段）となり、原子が捕捉できるようになる。本実施の形態では、１辺が１００μｍ程度の立体の領域で原子を捕捉するようにしたが、これに限るものではなく、凸部１０２の高さ及び幅を１μｍ程度とし、開口部１０５の凸部１０２の延在方向の寸法を１μｍ程度として、１辺が１μｍ程度の立体の領域で原子を捕捉するようにしても良い。この場合、超伝導体薄膜の膜厚は０．１μｍ程度とすればよい。このようにより小さい領域に原子を捕捉するようにすることで、１つの原子のみを捕捉するようにすることができる。これに対し、より広い領域に原子を捕捉するようにすることで、複数の原子を捕捉することができる。   In this way, a magnetic field minimum point is formed at the center of the loop circuit wiring 301, and the region of the magnetic field minimum point becomes a magnetic field trap (atom capturing means), so that atoms can be captured. In the present embodiment, atoms are captured in a solid region having a side of about 100 μm. However, the present invention is not limited to this, and the height and width of the convex portion 102 are about 1 μm, and the convexity of the opening 105 The dimension in the extending direction of the portion 102 may be about 1 μm, and atoms may be captured in a solid region having one side of about 1 μm. In this case, the thickness of the superconductor thin film may be about 0.1 μm. By capturing atoms in a smaller region in this way, it is possible to capture only one atom. On the other hand, a plurality of atoms can be captured by capturing atoms in a wider region.

次に、超伝導体薄膜１０３の屈曲部１０４に形成された開口部１０５の縁の部分（ループ回路配線３０１）に、超伝導永久電流を流す方法について説明する。まず、本実施の形態の原子捕捉素子が、超伝導転位温度より高温の段階で、磁場発生部１１２により、超伝導体薄膜１０３の開口部１０５を貫く磁場を印加する。次に、冷却機構１１１を動作させて、原子捕捉素子を、超伝導体薄膜１０３の超伝導転位温度以下まで冷却する。この後、磁場発生部１１２の動作を停止して、開口部１０５を貫く磁場を切る。これらのことにより、超伝導体薄膜１０３の屈曲部１０４に形成された開口部１０５の縁に、超伝導永久電流が流れる状態となる。この場合、冷却機構１１１及び磁場発生部１１２により、超伝導電流生成手段が構成されているものとなる。   Next, a method of flowing a superconducting permanent current through the edge portion (loop circuit wiring 301) of the opening 105 formed in the bent portion 104 of the superconductor thin film 103 will be described. First, in the atom trapping element of the present embodiment, a magnetic field penetrating through the opening 105 of the superconductor thin film 103 is applied by the magnetic field generator 112 when the temperature is higher than the superconducting dislocation temperature. Next, the cooling mechanism 111 is operated to cool the atom trapping element to the superconducting dislocation temperature or lower of the superconductor thin film 103. Thereafter, the operation of the magnetic field generator 112 is stopped, and the magnetic field penetrating the opening 105 is turned off. As a result, a superconductive permanent current flows through the edge of the opening 105 formed in the bent portion 104 of the superconductor thin film 103. In this case, the cooling mechanism 111 and the magnetic field generator 112 constitute a superconducting current generator.

次に、上述した本実施の形態における原子捕捉素子の作製方法について、図６〜図９の斜視図を用いて簡単に説明する。まず、図６に示すように、例えばＡｌ2Ｏ3の結晶からなる基板１０１を用意し、次に、図７に示すように、基板１０１の表面に、凸部１０２が形成された状態とする。次に、図８に示すように、凸部１０２を含む基板１０１の表面に、例えば、ＭｇＢ2からなる超伝導体薄膜１０３が形成され、凸部１０２の上には、超伝導体薄膜１０３の屈曲部１０４が形成された状態とする。 Next, a method for manufacturing the above-described atom trapping element in this embodiment will be briefly described with reference to the perspective views of FIGS. First, as shown in FIG. 6, a substrate 101 made of, for example, Al 2 O 3 crystal is prepared. Next, as shown in FIG. 7, a convex portion 102 is formed on the surface of the substrate 101. . Next, as shown in FIG. 8, a superconductor thin film 103 made of, for example, MgB 2 is formed on the surface of the substrate 101 including the convex portion 102, and the superconductor thin film 103 is formed on the convex portion 102. It is assumed that the bent portion 104 is formed.

次に、屈曲部１０４及び凸部１０２の所定の領域を除去し、図９に示すように、超伝導体薄膜１０３の屈曲部１０４に開口部１０５が形成され、凸部１０２には除去領域１０６が形成された状態とする。これらの結果、開口部１０５及び除去領域１０６においては、開口部１０５の縁の部分に、３次元的な構造のループ回路が形成されるようになる。このループ回路による仮想的な立体に囲われる領域には、除去領域１０６により空間が形成されており、前述したように超伝導永久電流を流すことで、上記領域の中央部に原子を捕捉できる状態とされている。   Next, predetermined regions of the bent portion 104 and the convex portion 102 are removed, and an opening 105 is formed in the bent portion 104 of the superconductor thin film 103 as shown in FIG. Is formed. As a result, in the opening 105 and the removal region 106, a loop circuit having a three-dimensional structure is formed at the edge of the opening 105. In the region surrounded by the virtual solid by the loop circuit, a space is formed by the removal region 106, and the state in which atoms can be trapped in the central portion of the region by flowing a superconducting permanent current as described above. It is said that.

なお、上述では、超伝導体薄膜に形成する屈曲部を、平面から構成したが、これに限るものではなく、例えば、図１０の斜視図に示すように、超伝導体薄膜１００１を折り曲げて曲面を形成してこれを屈曲部１００２とし、曲面から構成された屈曲部１００２に開口部１００４が形成されているようにしても良い。このように、超伝導体薄膜１００１に稜線を備えて形成された屈曲領域となる屈曲部１００２を形成し、屈曲領域の稜線をまたいで形成された開口部１００４の縁によるループ回路においても、前述したように超伝導永久電流が流れる状態とすることで、開口部１００４の縁による仮想的な立体の中央部に、原子を捕捉することができる。   In the above description, the bent portion formed in the superconductor thin film is configured from a plane. However, the present invention is not limited to this. For example, as shown in the perspective view of FIG. This may be used as a bent portion 1002, and an opening 1004 may be formed in the bent portion 1002 formed of a curved surface. As described above, even in the loop circuit formed by the edge of the opening 1004 that is formed across the ridge line of the bending region by forming the bending portion 1002 that becomes the bending region formed with the ridge line in the superconductor thin film 1001. As described above, by setting a state in which a superconducting permanent current flows, atoms can be captured in a virtual three-dimensional central portion by the edge of the opening 1004.

また、図１１の斜視図に示すように、超伝導体薄膜１１０１に、屈曲部１１０２ａ，屈曲部１１０２ｂ，屈曲部１１０２ｃを設け、各々の屈曲部に、複数の開口部１１０４を設けるようにしても良い。この場合、超伝導体薄膜１１０１の一方の面の側から見ると、屈曲部１１０２ａ及び屈曲部１１０２ｃが、凸部となり、屈曲部１１０２ｂが凹部となっている。凹部としてみる屈曲部１１０２ｂにおいては、谷線をまたいで開口部１１０４が形成されている。また、超伝導体薄膜１１０１の他方の面の側から見ると、屈曲部１１０２ａ及び屈曲部１１０２ｃが、凹部となり、屈曲部１１０２ｂが凸部となっている。   Further, as shown in the perspective view of FIG. 11, the superconductor thin film 1101 is provided with a bent portion 1102a, a bent portion 1102b, and a bent portion 1102c, and a plurality of openings 1104 are provided in each bent portion. good. In this case, when viewed from one surface side of the superconductor thin film 1101, the bent portion 1102a and the bent portion 1102c are convex portions, and the bent portion 1102b is a concave portion. In the bent portion 1102b viewed as a concave portion, an opening 1104 is formed across the valley line. Further, when viewed from the other surface side of the superconductor thin film 1101, the bent portion 1102a and the bent portion 1102c are concave portions, and the bent portion 1102b is a convex portion.

なお、上述した本実施の形態の原子捕捉素子は、本発明の一例であり、具体的な構成は上述した実施の形態に限るものではなく、本発明の趣旨を逸脱しない範囲での設計の変更は、本発明に含まれるものである。例えば、超伝導体薄膜は、ＭｇＢ2に限るものではなく、ニオブ（Ｎｂ），窒化ニオブ（ＮｂＮ），及びアルミニウム（Ａｌ）などの超伝導材料から構成されていても良い。 The above-described atom trapping element of the present embodiment is an example of the present invention, and the specific configuration is not limited to the above-described embodiment, and the design can be changed without departing from the spirit of the present invention. Are included in the present invention. For example, the superconductor thin film is not limited to MgB 2 , and may be made of a superconductive material such as niobium (Nb), niobium nitride (NbN), and aluminum (Al).

また、超伝導体薄膜を超伝導転移温度に冷却する冷却機構と、開口部の縁の一部の加熱領域を加熱する加熱機構と、上記加熱領域を挟むように開口部の縁に接続して電流を印加する電流印加機構とで、超伝導永久電流を発生させる手段を構成しても良い。なお、加熱機構は、例えばレーザであり、レーザ光を照射することで加熱領域を加熱することができる。   In addition, a cooling mechanism for cooling the superconductor thin film to the superconducting transition temperature, a heating mechanism for heating a part of the heating area at the edge of the opening, and an edge of the opening so as to sandwich the heating area A means for generating a superconducting permanent current may be constituted by a current application mechanism for applying a current. Note that the heating mechanism is, for example, a laser, and the heating region can be heated by irradiation with laser light.

この場合、冷却機構により超伝導体薄膜の屈曲部に形成した開口部の縁からなるループ回路を、冷却機構で超伝導転移温度（Ｔｃ）以下に冷却し、ループ回路を超伝導状態とする。この状態で、ループ回路の一部（加熱領域）を加熱機構で加熱してＴｃ以上にまで昇温し、加熱領域を常伝導状態とする。次に、電流印加機構により、ループ回路に電流が流れた状態とする。次に、加熱機構による加熱領域の加熱を停止し、加熱領域がＴｃ以下にまで冷却された状態とする。このことにより、ループ回路に超伝導電流が流れる状態となる。この後、電流印加機構による電流の印加を停止すれば、ループ回路の超伝導永久電流が流れる状態が得られる。   In this case, the loop circuit composed of the edge of the opening formed in the bent portion of the superconductor thin film by the cooling mechanism is cooled to the superconducting transition temperature (Tc) or less by the cooling mechanism, and the loop circuit is brought into a superconducting state. In this state, a part of the loop circuit (heating region) is heated by the heating mechanism to raise the temperature to Tc or more, thereby bringing the heating region into a normal conduction state. Next, the current is applied to the loop circuit by the current application mechanism. Next, heating of the heating region by the heating mechanism is stopped, and the heating region is cooled to Tc or less. As a result, a superconducting current flows through the loop circuit. Thereafter, when the current application by the current application mechanism is stopped, a state in which the superconducting permanent current of the loop circuit flows can be obtained.

また、上述した実施の形態では、凸部が形成された基板の上に超伝導体薄膜を形成し、基板の凸部を利用して、超伝導体薄膜に屈曲部が形成されるようにしたが、これに限るものではない。例えば、凹部が形成された基板の上に超伝導体薄膜を形成し、基板の凹部を利用して超伝導体薄膜に屈曲部が形成されるようにしても良い。この場合、屈曲部に開口部を形成すれば、開口部に縁により形成される仮想的な立体に囲われる領域は、既に空間となっているので、凸部の場合に比較して、除去領域を形成する必要がない。   In the above-described embodiment, the superconductor thin film is formed on the substrate on which the convex portion is formed, and the bent portion is formed on the superconductor thin film using the convex portion of the substrate. However, it is not limited to this. For example, a superconductor thin film may be formed on a substrate in which a recess is formed, and a bent portion may be formed in the superconductor thin film using the recess of the substrate. In this case, if the opening is formed in the bent portion, the region surrounded by the virtual solid formed by the edge in the opening is already a space, so the removal region is compared to the case of the convex portion. There is no need to form.

本発明の実施の形態における原子捕捉素子の構成例を示す構成図である。It is a block diagram which shows the structural example of the atom capture element in embodiment of this invention. 図１の一部を拡大して示す斜視図である。It is a perspective view which expands and shows a part of FIG. 開口部１０５の縁の部分に形成されるループ回路の構成を示す斜視図である。3 is a perspective view showing a configuration of a loop circuit formed at an edge portion of an opening 105. FIG. 開口部１０５の縁の部分（ループ回路配線３０１）に超伝導永久電流が流れたときに形成される磁場の状態を示す分布図である。6 is a distribution diagram showing a state of a magnetic field formed when a superconducting permanent current flows through an edge portion (loop circuit wiring 301) of an opening 105. FIG. 開口部１０５の縁の部分（ループ回路配線３０１）に超伝導永久電流が流れたときに形成される磁場の状態を示す分布図である。6 is a distribution diagram showing a state of a magnetic field formed when a superconducting permanent current flows through an edge portion (loop circuit wiring 301) of an opening 105. FIG. 本発明の実施の形態における原子捕捉素子の作製方法を説明するための一部工程を示す斜視図である。It is a perspective view which shows the one part process for demonstrating the preparation method of the atom capture element in embodiment of this invention. 本発明の実施の形態における原子捕捉素子の作製方法を説明するための一部工程を示す斜視図である。It is a perspective view which shows the one part process for demonstrating the preparation method of the atom capture element in embodiment of this invention. 本発明の実施の形態における原子捕捉素子の作製方法を説明するための一部工程を示す斜視図である。It is a perspective view which shows the one part process for demonstrating the preparation method of the atom capture element in embodiment of this invention. 本発明の実施の形態における原子捕捉素子の作製方法を説明するための一部工程を示す斜視図である。It is a perspective view which shows the one part process for demonstrating the preparation method of the atom capture element in embodiment of this invention. 本発明の実施の形態における他の原子捕捉素子の構成例を示す斜視図である。It is a perspective view which shows the structural example of the other atom capture element in embodiment of this invention. 本発明の実施の形態における他の原子捕捉素子の構成例を示す斜視図である。It is a perspective view which shows the structural example of the other atom capture element in embodiment of this invention.

符号の説明Explanation of symbols

１０１…基板、１０２…凸部、１０３…超伝導体薄膜、１０４…屈曲部、１０５…開口部、１０６…除去領域、１１１…冷却機構、１１２…磁場発生部。   DESCRIPTION OF SYMBOLS 101 ... Board | substrate, 102 ... Convex part, 103 ... Superconductor thin film, 104 ... Bending part, 105 ... Opening part, 106 ... Removal area | region, 111 ... Cooling mechanism, 112 ... Magnetic field generation | occurrence | production part.

Claims (6)

超伝導体から構成された超伝導体薄膜と、
この超伝導体薄膜に形成された屈曲部と、
前記超伝導体薄膜の前記屈曲部に形成された開口部と、
この開口部の縁に超伝導永久電流が流れる状態とする超伝導電流生成手段と
を少なくとも備え、
前記開口部の縁により立体的なループ回路が形成されることを特徴とする原子捕捉素子。 A superconductor thin film composed of a superconductor;
A bend formed in the superconductor thin film;
An opening formed in the bent portion of the superconductor thin film;
A superconducting current generating means for allowing a superconducting permanent current to flow at the edge of the opening ,
Atom capturing device characterized Rukoto three-dimensional loop circuit is formed by an edge of the opening. 請求項１記載の原子捕捉素子において、
前記超伝導体薄膜の前記屈曲部に形成された複数の開口部を備える
ことを特徴とする原子捕捉素子。 The atom trapping device according to claim 1, wherein
An atom trapping element comprising a plurality of openings formed in the bent portion of the superconductor thin film. 請求項１又は２記載の原子捕捉素子において、
前記超伝導体薄膜は、表面に凸部を備えた基板の前記凸部を含めた前記基板の表面に形成されて、前記凸部の上の前記超伝導体薄膜の部分が前記屈曲部とされ、
前記開口部は、前記凸部の上の前記超伝導体薄膜に形成され、
前記超伝導体薄膜の前記開口部が形成されている前記凸部の領域は除去されている
ことを特徴とする原子捕捉素子。 The atom trapping element according to claim 1 or 2,
The superconductor thin film is formed on the surface of the substrate including the convex portion of the substrate having a convex portion on the surface, and the portion of the superconductor thin film on the convex portion is the bent portion. ,
The opening is formed in the superconductor thin film on the convex portion,
The region of the convex portion where the opening of the superconductor thin film is formed is removed. 請求項１又は２記載の原子捕捉素子において、
前記超伝導体薄膜は、表面に凹部を備えた基板の前記凹部を含めた前記基板の表面に形成されて、前記凹部の上の前記超伝導体薄膜の部分が前記屈曲部とされ、
前記開口部は、前記凹部の上の前記超伝導体薄膜に形成されている
ことを特徴とする原子捕捉素子。 The atom trapping element according to claim 1 or 2,
The superconductor thin film is formed on the surface of the substrate including the concave portion of the substrate having a concave portion on the surface, and the portion of the superconductor thin film on the concave portion is the bent portion,
The opening is formed in the superconductor thin film on the concave portion. 請求項１〜４のいずれか１項に記載の原子捕捉素子において、
前記超伝導電流生成手段は、
前記開口部を貫く磁場を発生する磁場発生手段と、
前記超伝導体薄膜を超伝導転移温度に制御する冷却手段と
を備えることを特徴とする原子捕捉素子。 The atom trapping element according to any one of claims 1 to 4,
The superconducting current generating means is
Magnetic field generating means for generating a magnetic field penetrating the opening,
An atom trapping element comprising: cooling means for controlling the superconductor thin film to a superconducting transition temperature. 請求項１〜４のいずれか１項に記載の原子捕捉素子において、
前記超伝導電流生成手段は、
前記超伝導体薄膜を超伝導転移温度に冷却する冷却手段と、
前記開口部の縁の一部の加熱領域を加熱する加熱手段と、
前記加熱領域を挟むように前記開口部の縁に接続して電流を印加する電流印加手段と
を備えることを特徴とする原子捕捉素子。 The atom trapping element according to any one of claims 1 to 4,
The superconducting current generating means is
Cooling means for cooling the superconductor thin film to a superconducting transition temperature;
Heating means for heating a heating region at a part of the edge of the opening;
An atom trapping element comprising: a current applying unit configured to apply current by connecting to an edge of the opening so as to sandwich the heating region.
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