[go: up one dir, main page]

JP4743094B2 - Electrical circuit device - Google Patents

Electrical circuit device Download PDF

Info

Publication number
JP4743094B2
JP4743094B2 JP2006313227A JP2006313227A JP4743094B2 JP 4743094 B2 JP4743094 B2 JP 4743094B2 JP 2006313227 A JP2006313227 A JP 2006313227A JP 2006313227 A JP2006313227 A JP 2006313227A JP 4743094 B2 JP4743094 B2 JP 4743094B2
Authority
JP
Japan
Prior art keywords
substrate
heat sink
heat
protrusion
terminal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2006313227A
Other languages
Japanese (ja)
Other versions
JP2008130757A (en
Inventor
浩 堂前
紀雄 鍵村
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Daikin Industries Ltd
Original Assignee
Daikin Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Daikin Industries Ltd filed Critical Daikin Industries Ltd
Priority to JP2006313227A priority Critical patent/JP4743094B2/en
Publication of JP2008130757A publication Critical patent/JP2008130757A/en
Application granted granted Critical
Publication of JP4743094B2 publication Critical patent/JP4743094B2/en
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1305—Bipolar Junction Transistor [BJT]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1305—Bipolar Junction Transistor [BJT]
    • H01L2924/13055—Insulated gate bipolar transistor [IGBT]

Landscapes

  • Structures For Mounting Electric Components On Printed Circuit Boards (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
  • Electric Connection Of Electric Components To Printed Circuits (AREA)
  • Cooling Or The Like Of Electrical Apparatus (AREA)

Description

この発明は、放熱板を用いて電気部品を放熱する技術に関する。   The present invention relates to a technique for radiating electrical components using a heat radiating plate.

電気部品が搭載された基板を放熱することは、その劣化を防止するために望ましい。基板の放熱を行うには大別して二種の放熱技術が考えられる。   It is desirable to dissipate heat from the board on which the electrical component is mounted in order to prevent its deterioration. There are two types of heat dissipation techniques for heat dissipation of the substrate.

第１の放熱技術として基板自身の改善が挙げられる。例えば配線層の箔厚を増大し、これに流れる電流が大きくても配線層の発熱を抑制する。あるいは基板材料として熱伝導性のよい、例えば金属を採用し、その表面に絶縁膜を設けて基板として用いる。   As the first heat dissipation technique, improvement of the substrate itself is mentioned. For example, the foil thickness of the wiring layer is increased, and the heat generation of the wiring layer is suppressed even if the current flowing therethrough is large. Alternatively, for example, a metal having good thermal conductivity is employed as the substrate material, and an insulating film is provided on the surface thereof to be used as the substrate.

第２の放熱技術として、搭載される電気部品からの放熱が挙げられる。これによれば、電気部品から基板へ伝導する熱量が小さくなるからである。また、一般の電気回路装置において基板に搭載される電気部品は、その一部が基板の発熱の主たる原因となる。よって発熱量が大きい電気部品について局所的に放熱構造を採用すれば、コストパフォーマンスが高くなる。また基板材料に金属を採用した場合に基板が重くなるという事態も回避できる。   As a second heat radiation technique, heat radiation from the mounted electrical component can be cited. This is because the amount of heat conducted from the electrical component to the substrate is reduced. In addition, some of the electrical components mounted on a substrate in a general electric circuit device are the main cause of heat generation of the substrate. Therefore, if a heat dissipation structure is locally adopted for an electrical component that generates a large amount of heat, cost performance will be improved. In addition, a situation in which the substrate becomes heavy when a metal is used as the substrate material can be avoided.

従来から電気部品についての放熱技術が紹介されている。後掲する特許文献１，２では電気部品の本体に対して放熱板が設けられている。また、電気部品自身の放熱構造については例えば非特許文献１に紹介されている。   Conventionally, heat dissipation technology for electrical components has been introduced. In Patent Documents 1 and 2 described later, a heat radiating plate is provided for the main body of the electrical component. In addition, the heat dissipation structure of the electrical component itself is introduced in Non-Patent Document 1, for example.

特開平１１−４５９６６号公報Japanese Patent Laid-Open No. 11-45966 特開平１１−２５１７８０号公報JP-A-11-251780 三菱電機株式会社、「三菱DIP-IPM活用の手引き」、［online］、［平成１８年１１月１日検索］、インターネット<URL:http://www.mitsubishichips.com/Japan/files/manuals/ka0370a1.pdf>Mitsubishi Electric Corporation, “Guide for Using Mitsubishi DIP-IPM”, [online], [searched on November 1, 2006], Internet <URL: http://www.mitsubishichips.com/Japan/files/manuals/ ka0370a1.pdf>

しかしながら、電気部品の本体は通常は樹脂などでモールドされており、そのこれに放熱板を設けても良好な熱伝導は得にくい。また電気部品が放熱用の金属面を露出させており、これに放熱板を取り付ける場合であっても、当該金属面自身に電流が流れるものではない。電気部品の発熱は、これに電流が流れることによって発生するので、電流が流れる電気部品の端子を効率よく放熱することが望まれる。   However, the main body of the electrical component is usually molded with resin or the like, and it is difficult to obtain good heat conduction even if a heat sink is provided on the body. Further, even when the electrical component exposes a heat-dissipating metal surface and a heat sink is attached thereto, no current flows through the metal surface itself. Since the heat generation of the electrical component is generated when a current flows therethrough, it is desirable to efficiently radiate the terminals of the electrical component through which the current flows.

そこで本発明は、電気部品の放熱を当該端子を経由して効率よく行う技術を提供することを目的とする。   Then, an object of this invention is to provide the technique which performs efficiently the thermal radiation of an electrical component via the said terminal.

この発明にかかる電気回路装置の第１及び第２の態様は、基板（１）に搭載され、端子（４１）を有する電気部品（４）と、前記基板（１）に搭載された放熱板（３）と、前記端子と前記放熱板とを架橋する半田（２）とを備える。 The first and second aspects of the electric circuit device according to the present invention include an electric component (4) mounted on a substrate (1) and having a terminal (41), and a heat dissipation plate mounted on the substrate (1) ( 3) and solder (2) for bridging the terminal and the heat sink.

そして第１の態様では前記放熱板（３）と前記電気部品（４）の本体（４０）とは前記基板（１）に関して相互に反対側に配置され、前記放熱板（３）は突起（３１）を有し、前記基板（１）には第１孔（１３）及び第２孔（１４）が貫通しており、前記第１孔には前記突起が、前記第２孔には前記端子（４１）が、それぞれ貫挿され、前記基板に関して前記本体と反対側で前記放熱板と前記端子とが前記半田（２）によって架橋される。 In the first aspect, the heat radiating plate (3) and the main body (40) of the electric component (4) are arranged on opposite sides with respect to the substrate (1), and the heat radiating plate (3) ), The substrate (1) has a first hole (13) and a second hole (14) extending therethrough, the protrusion is formed in the first hole, and the terminal ( 41) are respectively inserted, and the heat sink and the terminal are bridged by the solder (2) on the side opposite to the main body with respect to the substrate .

この発明にかかる電気回路装置の第２の態様では、前記放熱板（３）と前記電気部品（４）の本体（４０）とは、前記基板（１）に関して相互に反対側に配置され、前記放熱板（３）は、前記本体とは前記基板（１）に関して反対側かつ前記基板寄りに第１の突起（３２）を有し、前記第１の突起と前記端子（４１）とが前記半田（２）によって架橋される。 In a second aspect of the electric circuit device according to the present invention, the heat radiating plate (3) and the main body (40) of the electric component (4) are arranged on opposite sides with respect to the substrate (1), and The heat radiating plate (3) has a first protrusion (32) on the opposite side of the substrate (1) from the main body and close to the substrate, and the first protrusion and the terminal (41) are connected to the solder. Cross-linked by (2) .

そして前記放熱板（３）は第２の突起（３１）を有し、前記基板（１）には貫通孔（１５）を有し、前記貫通孔には前記第２の突起が貫挿される。 The heat dissipation plate (3) has a second protrusion (31), the substrate (1) has a through hole (15), and the second protrusion is inserted into the through hole.

この発明にかかる電気回路装置の第３の態様は、その第１乃至第２の態様のいずれかであって、前記本体（４０）は、前記基板（１）の反対側に放熱構造（４０７）を備える。 A third aspect of the electric circuit device according to the present invention is any one of the first to second aspects, wherein the main body (40) has a heat dissipation structure (407) on the opposite side of the substrate (1). Is provided.

この発明にかかる電気回路装置の第４の態様は、その第３の態様であって、前記電気部品（４）は、前記端子（４１）を形成するリードフレーム（４００）と、前記リードフレームに関して前記放熱構造（４０７）と反対側で前記リードフレームに接触して設けられた電気素子（４０１）と、前記電気素子と反対側で前記放熱構造（４０７）と前記リードフレームの間に設けられたモールド樹脂（４０５）とを有する。 A fourth aspect of the electric circuit device according to the present invention is the third aspect, wherein the electric component (4) relates to a lead frame (400) forming the terminal (41) and the lead frame. An electrical element (401) provided in contact with the lead frame on the side opposite to the heat dissipation structure (407), and provided between the heat dissipation structure (407) and the lead frame on the side opposite to the electrical element. Mold resin (405).

この発明にかかる電気回路装置の第１及び第２の態様によれば、電気部品の端子が熱伝導の良好な半田によって放熱板と架橋されるので、基板において金属箔を経由して放熱板と接続された場合と比較して、電気部品の放熱を当該端子を経由して効率よく行える。 According to the first and second aspects of the electric circuit device according to the present invention, the terminal of the electric component is cross-linked with the heat sink by the solder having good heat conduction. Compared with the case of being connected, the heat dissipation of the electrical component can be efficiently performed via the terminal.

そして第１の態様によれば、突起によって放熱板が基板に支持されるので、放熱板への半田による架橋の作業が容易である。また放熱板に対して広い領域で架橋できるので熱伝導が向上する。しかも放熱板の面積を広く採ることができる。また電気部品の本体からの放熱を向上させる。 And according to the 1st aspect, since a heat sink is supported by a board | substrate by protrusion, the bridge | crosslinking operation | work by the solder to a heat sink is easy. In addition, heat conduction is improved because the heat sink can be cross-linked in a wide area. In addition, the area of the heat sink can be widened. It also improves heat dissipation from the main body of electrical components.

この発明にかかる電気回路装置の第２の態様によれば、半田の使用量を第１の突起を目処にして目算できるので、半田による架橋の作業が容易である。 According to the second aspect of the electric circuit device of the present invention, the amount of solder used can be estimated with the first protrusion as a target, so that the cross-linking operation using solder is easy.

しかも、第２の突起によって放熱板が基板に支持されるので、第１の突起への半田による架橋の作業が容易である。 In addition , since the heat dissipation plate is supported on the substrate by the second protrusions, the work of bridging the first protrusions with solder is easy.

この発明にかかる電気回路装置の第４の態様によれば、電気部品は端子を経由した放熱板からの放熱のみならず、本体からの放熱も行われる。 According to the fourth aspect of the electric circuit device of the present invention, the electric component not only radiates heat from the heat radiating plate via the terminals but also radiates heat from the main body.

第１の実施の形態．
図１はこの発明の第１の実施の形態にかかる電気回路装置の構成を示す断面図である。当該電気回路装置は、基板１と、いずれも基板１０に搭載され、電気部品たる電力素子４及び放熱板３とを備えている。電力素子４は電力素子本体４０及び、電流が流れる端子であるリード線４１，４２を有しており、リード線４１と放熱板３とは半田２で架橋されている。基板１は配線基板本体１０を有し、これにはリード線４１と接続されるプリント配線１２が金属箔で設けられている。同様にプリント配線１２と反対側において配線基板本体１０にはプリント配線１１が金属箔で設けられている。 First embodiment.
FIG. 1 is a sectional view showing a configuration of an electric circuit device according to a first embodiment of the present invention. The electric circuit device includes a substrate 1 and a power element 4 and a heat radiating plate 3 that are both mounted on the substrate 10 and are electrical components. The power element 4 includes a power element body 40 and lead wires 41 and 42 that are terminals through which a current flows. The board 1 has a wiring board main body 10 on which a printed wiring 12 connected to a lead wire 41 is provided with a metal foil. Similarly, a printed wiring 11 is provided on the wiring board body 10 on the side opposite to the printed wiring 12 with a metal foil.

このように電力素子４のリード線４１が熱伝導の良好な半田２によって放熱板３と架橋されるので、プリント配線１２を経由して放熱板３と接続された場合と比較して、電力素子４の放熱を当該リード線４１を経由して効率よく行える。   Thus, since the lead wire 41 of the power element 4 is bridged with the heat sink 3 by the solder 2 having good heat conduction, the power element is compared with the case where it is connected to the heat sink 3 via the printed wiring 12. 4 can be efficiently radiated through the lead wire 41.

より詳細には、基板１には孔１３，１４が貫通している。そして放熱板３は突起３１を有しており、突起３１が孔１３に貫挿している。また孔１４にはリード線４１が貫挿している。但し突起３１と反対側で、放熱板３とリード線４１とが半田２によって架橋される。   More specifically, holes 13 and 14 pass through the substrate 1. The heat radiating plate 3 has a protrusion 31, and the protrusion 31 penetrates the hole 13. A lead wire 41 is inserted into the hole 14. However, the radiator plate 3 and the lead wire 41 are bridged by the solder 2 on the side opposite to the protrusion 31.

このように突起３１によって放熱板３が基板１に支持されるので、放熱板３への半田２による架橋の作業が容易となる。また孔１３から覗かれる突起３１にではなく、放熱板３に対して架橋できるので、その架橋する領域が大きくなり、熱伝導が向上する。   Thus, since the heat sink 3 is supported by the board | substrate 1 by the protrusion 31, the bridge | crosslinking operation | work by the solder 2 to the heat sink 3 becomes easy. Moreover, since it can bridge | crosslink with respect to the heat sink 3 instead of the protrusion 31 seen from the hole 13, the area | region to bridge | crosslink becomes large and heat conduction improves.

また、より詳細には、放熱板３と電力素子４の電力素子本体４０とは基板１に関して相互に反対側に配置される。   More specifically, the heat radiating plate 3 and the power element body 40 of the power element 4 are disposed on the opposite sides with respect to the substrate 1.

このような配置を採用することにより、放熱板３の占有する空間が電力素子４と競合することがないので、放熱板３の面積を広く採ることができる。逆に電力素子４近傍の空間が放熱板３によって占有されることがないので、電力素子本体４０のための放熱機構を設けやすい。また電力素子４の電力素子本体４０とは基板１を隔てて放熱板３から放熱されるので、電力素子本体４０からの放熱を阻害しにくい。従って電力素子本体４０からの放熱が向上する。   By adopting such an arrangement, the space occupied by the heat sink 3 does not compete with the power element 4, so that the area of the heat sink 3 can be widened. Conversely, since the space near the power element 4 is not occupied by the heat radiating plate 3, it is easy to provide a heat radiating mechanism for the power element body 40. Further, since heat is dissipated from the heat radiating plate 3 across the substrate 1 from the power element main body 40 of the power element 4, it is difficult to inhibit heat dissipation from the power element main body 40. Therefore, heat dissipation from the power element body 40 is improved.

第２の実施の形態．
図２はこの発明の第２の実施の形態にかかる電気回路装置の構成を示す断面図である。当該電気回路装置も第１の実施の形態と同様に、基板１と、いずれも基板１に搭載された電力素子４及び放熱板３とを備えており、リード線４１と放熱板３とは半田２で架橋されている。そして放熱板３と電力素子４の電力素子本体４０とは、基板１に関して相互に反対側に配置されている。 Second embodiment.
FIG. 2 is a cross-sectional view showing a configuration of an electric circuit device according to a second embodiment of the present invention. Similar to the first embodiment, the electric circuit device also includes a substrate 1 and a power element 4 and a heat radiating plate 3 mounted on the substrate 1, and the lead wire 41 and the heat radiating plate 3 are soldered. 2 is cross-linked. The heat radiating plate 3 and the power element main body 40 of the power element 4 are arranged on the opposite sides with respect to the substrate 1.

但し、放熱板３は、電力素子本体４０とは基板１に関して反対側で、かつ基板１寄りに突起３２を有している。そして突起３２とリード線４１とが半田２によって架橋されている。   However, the heat sink 3 has a protrusion 32 on the opposite side of the power element body 40 with respect to the substrate 1 and closer to the substrate 1. The protrusion 32 and the lead wire 41 are bridged by the solder 2.

このように突起３２を設けることにより、半田２の使用量は突起３２の高さを目処にして目算できる。これは半田２による架橋の作業を容易とする。   By providing the protrusions 32 in this way, the amount of solder 2 used can be estimated based on the height of the protrusions 32. This facilitates the cross-linking operation with the solder 2.

なお、図２に示されるように、基板１には貫通孔１５が設けられ、放熱板３には突起３１が設けられ、突起３１が貫通孔１５に貫挿することが望ましい。突起３１によって放熱板３が基板１に支持されるので、突起３２への半田による架橋の作業が容易となる。もちろん、半田２によって突起３１も基板１に固定されることが望ましい。突起３１，３２を半田フローによって一旦固定してから、突起３２へと半田２を追加して増量してもよい。   As shown in FIG. 2, it is desirable that the substrate 1 is provided with a through hole 15, the heat radiating plate 3 is provided with a protrusion 31, and the protrusion 31 is inserted into the through hole 15. Since the heat radiating plate 3 is supported by the substrate 1 by the protrusions 31, the work of bridging the protrusions 32 with solder becomes easy. Of course, it is desirable that the protrusion 31 is also fixed to the substrate 1 by the solder 2. The protrusions 31 and 32 may be temporarily fixed by the solder flow, and then the solder 2 may be added to the protrusion 32 to increase the amount.

第３の実施の形態．
図３はこの発明の第１の実施の形態及び第２の実施の形態にかかる電気回路装置において採用される電力素子４の構成を示す断面図である。 Third embodiment.
FIG. 3 is a cross-sectional view showing the configuration of the power element 4 employed in the electric circuit device according to the first embodiment and the second embodiment of the present invention.

電力素子４の本体４０は、ＩＧＢＴ（絶縁ゲート型バイポーラトランジスタ）４０１やＨＶＩＣ（高圧集積回路）４０２を備えており、これらの動作が電力素子４の機能を発揮する。本体４０は、ＩＧＢＴ４０１やＨＶＩＣ４０２を埋設するモールド樹脂４０５、及びこれを更に埋設するモールド樹脂４０６を備えている。そしてリード線４１，４２の屈曲方向とは反対側に放熱構造としてヒートシンク４０７をも備えており、その一面はモールド樹脂４０６から露出している。   The main body 40 of the power element 4 includes an IGBT (Insulated Gate Bipolar Transistor) 401 and an HVIC (High Voltage Integrated Circuit) 402, and these operations exhibit the function of the power element 4. The main body 40 includes a mold resin 405 in which the IGBT 401 and the HVIC 402 are embedded, and a mold resin 406 in which this is further embedded. A heat sink 407 is also provided as a heat dissipation structure on the side opposite to the bending direction of the lead wires 41 and 42, and one surface thereof is exposed from the mold resin 406.

よって電力素子４を基板１に搭載した場合、ヒートシンク４０７は基板１とは反対側で露出することになる。これは端子４１を経由した放熱板３からの放熱のみならず、本体４０からの放熱も行われる点で望ましい。特にヒートシンク４０７に対して更に放熱機構を追加することが容易となって望ましい。   Therefore, when the power element 4 is mounted on the substrate 1, the heat sink 407 is exposed on the side opposite to the substrate 1. This is desirable in that not only heat dissipation from the heat dissipation plate 3 via the terminal 41 but also heat dissipation from the main body 40 is performed. In particular, it is desirable to add a heat dissipation mechanism to the heat sink 407 easily.

より詳細には、端子４１はリードフレーム４００を用いて形成されており、リードフレーム４００に関してヒートシンク４０７とは反対側で、リードフレーム４００に接触してＩＧＢＴ４０１やＨＶＩＣ４０２が設けられている。但し絶縁が必要な部位については図示しない絶縁シートあるいはリードフレーム４００における分離が行われている。他方、ＩＧＢＴ４０１やＨＶＩＣ４０２へはボンディングワイヤ４０３，４０４による接続が施されている。   More specifically, the terminal 41 is formed using the lead frame 400, and the IGBT 401 and the HVIC 402 are provided in contact with the lead frame 400 on the opposite side of the lead frame 400 from the heat sink 407. However, the parts that need insulation are separated in an insulating sheet or lead frame 400 (not shown). On the other hand, connection to the IGBT 401 and the HVIC 402 by bonding wires 403 and 404 is performed.

またＩＧＢＴ４０１やＨＶＩＣ４０２とは反対側でヒートシンク４０７とリードフレーム４００の間にはモールド樹脂４０５が存在する。   A mold resin 405 exists between the heat sink 407 and the lead frame 400 on the side opposite to the IGBT 401 and the HVIC 402.

モールド樹脂４０５の存在により、ヒートシンク４０７とリードフレーム４００との絶縁性を保つことができる。またＩＧＢＴ４０１やＨＶＩＣ４０２における発熱はリードフレーム４００、リード線４１を介して放熱板３（図１、図２参照）によって効率よく放熱される。   The presence of the mold resin 405 can maintain the insulation between the heat sink 407 and the lead frame 400. The heat generated in the IGBT 401 and the HVIC 402 is efficiently radiated by the heat radiating plate 3 (see FIGS. 1 and 2) through the lead frame 400 and the lead wire 41.

この発明の第１の実施の形態にかかる電気回路装置の構成を示す断面図である。It is sectional drawing which shows the structure of the electric circuit apparatus concerning 1st Embodiment of this invention. この発明の第２の実施の形態にかかる電気回路装置の構成を示す断面図である。It is sectional drawing which shows the structure of the electric circuit apparatus concerning 2nd Embodiment of this invention. この発明の第１の実施の形態及び第２の実施の形態にかかる電気回路装置において採用される電力素子の構成を示す断面図である。It is sectional drawing which shows the structure of the power element employ | adopted in the electric circuit apparatus concerning 1st Embodiment and 2nd Embodiment of this invention.

符号の説明Explanation of symbols

１ 基板
１１，１２ プリント配線
１３，１４ 孔
２ 半田
３ 放熱板
３１，３２ 突起
４ 電力素子
４０ 電力素子本体
４００ リードフレーム
４０１ ＩＧＢＴ
４０２ ＨＶＩＣ
４０３，４０４ ボンディングワイヤ
４０５，４０６ モールド樹脂
４０７ ヒートシンク
４１，４２ リード線 DESCRIPTION OF SYMBOLS 1 Board | substrate 11,12 Printed wiring 13,14 Hole 2 Solder 3 Heat sink 31,32 Protrusion 4 Power element 40 Power element main body 400 Lead frame 401 IGBT
402 HVIC
403, 404 Bonding wire 405, 406 Mold resin 407 Heat sink 41, 42 Lead wire

Claims (4)

基板（１）に搭載され、端子（４１）を有する電気部品（４）と、
前記基板（１）に搭載された放熱板（３）と、
前記端子と前記放熱板とを架橋する半田（２）と
を備え、
前記放熱板（３）と前記電気部品（４）の本体（４０）とは前記基板（１）に関して相互に反対側に配置され、
前記放熱板（３）は突起（３１）を有し、
前記基板（１）には第１孔（１３）及び第２孔（１４）が貫通しており、
前記第１孔には前記突起が、前記第２孔には前記端子（４１）が、それぞれ貫挿され、
前記基板に関して前記本体と反対側で前記放熱板と前記端子とが前記半田（２）によって架橋される、電気回路装置。 An electrical component (4) mounted on a substrate (1) and having a terminal (41);
A heat sink (3) mounted on the substrate (1);
Solder (2) for bridging the terminal and the heat sink;
The heat sink (3) and the body (40) of the electrical component (4) are arranged on opposite sides with respect to the substrate (1),
The heat sink (3) has a protrusion (31),
The substrate (1) has a first hole (13) and a second hole (14) extending therethrough,
The protrusion is inserted into the first hole, and the terminal (41) is inserted into the second hole.
The electric circuit device, wherein the heat sink and the terminal are bridged by the solder (2) on the side opposite to the main body with respect to the substrate. 基板（１）に搭載され、端子（４１）を有する電気部品（４）と、
前記基板（１）に搭載された放熱板（３）と、
前記端子と前記放熱板とを架橋する半田（２）と
を備え、
前記放熱板（３）と前記電気部品（４）の本体（４０）とは、前記基板（１）に関して相互に反対側に配置され、
前記放熱板（３）は、前記本体とは前記基板（１）に関して反対側かつ前記基板寄りに第１の突起（３２）を有し、
前記第１の突起と前記端子（４１）とが前記半田（２）によって架橋され、
前記放熱板（３）は第２の突起（３１）を有し、
前記基板（１）には貫通孔（１５）を有し、
前記貫通孔には前記第２の突起が貫挿される、電気回路装置。 An electrical component (4) mounted on a substrate (1) and having a terminal (41);
A heat sink (3) mounted on the substrate (1);
Solder (2) for bridging the terminal and the heat sink;
The heat sink (3) and the body (40) of the electrical component (4) are arranged on opposite sides with respect to the substrate (1),
The heat sink (3) has a first protrusion (32) on the opposite side of the substrate (1) from the main body and closer to the substrate,
The first protrusion and the terminal (41) are cross-linked by the solder (2),
The heat sink (3) has a second protrusion (31),
The substrate (1) has a through hole (15),
The electric circuit device, wherein the second protrusion is inserted into the through hole. 前記本体（４０）は、前記基板（１）の反対側に放熱構造（４０７）を備える、請求項１乃至２のいずれか一つに記載の電気回路装置。   The electric circuit device according to any one of claims 1 to 2, wherein the main body (40) includes a heat dissipation structure (407) on a side opposite to the substrate (1). 前記電気部品（４）は、
前記端子（４１）を形成するリードフレーム（４００）と、
前記リードフレームに関して前記放熱構造（４０７）と反対側で前記リードフレームに接触して設けられた電気素子（４０１）と、
前記電気素子と反対側で前記放熱構造（４０７）と前記リードフレームの間に設けられたモールド樹脂（４０５）と
を有する、請求項３記載の電気回路装置。 The electrical component (4)
A lead frame (400) forming the terminal (41);
An electrical element (401) provided in contact with the lead frame on the opposite side of the heat dissipation structure (407) with respect to the lead frame;
The electric circuit device according to claim 3, further comprising: a mold resin (405) provided between the heat dissipation structure (407) and the lead frame on a side opposite to the electric element.
JP2006313227A 2006-11-20 2006-11-20 Electrical circuit device Expired - Fee Related JP4743094B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2006313227A JP4743094B2 (en) 2006-11-20 2006-11-20 Electrical circuit device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2006313227A JP4743094B2 (en) 2006-11-20 2006-11-20 Electrical circuit device

Publications (2)

Publication Number Publication Date
JP2008130757A JP2008130757A (en) 2008-06-05
JP4743094B2 true JP4743094B2 (en) 2011-08-10

Family

ID=39556302

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2006313227A Expired - Fee Related JP4743094B2 (en) 2006-11-20 2006-11-20 Electrical circuit device

Country Status (1)

Country Link
JP (1) JP4743094B2 (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013084674A (en) * 2011-10-06 2013-05-09 Shindengen Electric Mfg Co Ltd Heat radiation structure of heat generation electronic device
JP6699641B2 (en) * 2017-10-30 2020-05-27 ダイキン工業株式会社 Electric component box and method of manufacturing electric circuit

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60176594A (en) * 1984-02-24 1985-09-10 Mitsui Toatsu Chem Inc Preparation of l-tryptophan
JPS61180464A (en) * 1985-02-05 1986-08-13 Matsushita Electric Ind Co Ltd Heat sink
JPH0312492A (en) * 1985-02-27 1991-01-21 P Stavinsky Henry Fire-proof compounds
JPH0425247A (en) * 1990-05-18 1992-01-29 Nec Corp Clock thinning circuit
JPH0888463A (en) * 1994-09-19 1996-04-02 Fujitsu Ltd Soldering and mounting method for electronic parts
JP2665172B2 (en) * 1994-11-15 1997-10-22 ローム株式会社 Method for manufacturing semiconductor device
JP3516789B2 (en) * 1995-11-15 2004-04-05 三菱電機株式会社 Semiconductor power module
JPH11195889A (en) * 1997-12-27 1999-07-21 Nec Home Electron Ltd Heat radiating part for printed board
JP2000138483A (en) * 1998-10-30 2000-05-16 Matsushita Electric Ind Co Ltd Printed wiring board unit
JP2000208908A (en) * 1999-01-19 2000-07-28 Mitsubishi Electric Corp Soldering method, printed wiring board, and mounting part suitable for them
JP4366863B2 (en) * 2000-02-02 2009-11-18 株式会社デンソー Electronic control unit
JP3715190B2 (en) * 2000-09-28 2005-11-09 シャープ株式会社 Heat dissipation structure of electronic equipment
JP3940647B2 (en) * 2002-07-24 2007-07-04 株式会社東芝 Soldering method using lead-free solder and mounting board manufacturing method
JP2004214444A (en) * 2003-01-06 2004-07-29 Densei Lambda Kk Sheet metal mounting board

Also Published As

Publication number Publication date
JP2008130757A (en) 2008-06-05

Similar Documents

Publication Publication Date Title
JP5388598B2 (en) Element heat dissipation structure
JP5967071B2 (en) Electronic control device and electric power steering device using the same
JP6183314B2 (en) Electronic device and drive device including the same
JP4492695B2 (en) Semiconductor module mounting structure
JP2010187504A (en) Inverter device
JP6020379B2 (en) Semiconductor device
JP5222838B2 (en) Control device
KR101946467B1 (en) Heat radiation structure of semiconductor device
JP2017060256A (en) Circuit structure and electric connection box
CN107251669A (en) Base board unit
JP2017152441A (en) Circuit structure
JP2017093243A (en) Circuit structure and electric connection box
JP2007324016A (en) Induction heating apparatus
JP4743094B2 (en) Electrical circuit device
CN111373525A (en) Circuit structure and electrical junction box
WO2017017901A1 (en) Semiconductor device
WO2020080248A1 (en) Circuit structure and electrical junction box
JP2009188192A (en) Circuit device
JP2015216143A (en) Heat dissipation structure
JP6198068B2 (en) Electronic equipment
JP2014170834A (en) Heat radiation structure of power semiconductor and audio device using the same
JP2018006765A (en) Electronic device
JP2005166981A (en) Electronic controller
JP2005033123A (en) Semiconductor power module
JP2019033168A (en) Electronic control device

Legal Events

Date Code Title Description
RD04 Notification of resignation of power of attorney

Free format text: JAPANESE INTERMEDIATE CODE: A7424

Effective date: 20091019

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20100112

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20100223

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20100421

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20110201

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20110318

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20110412

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20110425

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20140520

Year of fee payment: 3

R151 Written notification of patent or utility model registration

Ref document number: 4743094

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R151

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20140520

Year of fee payment: 3

LAPS Cancellation because of no payment of annual fees