JP4739269B2 - Vertical probe - Google Patents

Description

The present invention relates to a vertical probe used to measure electrical characteristics of a semiconductor device.

  This type of vertical probe unit includes a plurality of coil spring probes, a lower guide plate having a lower guide hole through which the tip of the coil spring probe passes, and portions other than the tip of the coil spring probe. Some include an upper guide plate having an upper guide hole that passes therethrough (see Patent Documents 1 and 2).

  At the time of measurement, the tip of the coil spring probe comes into contact with the conductive pad of the semiconductor device, and when pressed through the conductive pad, the coil spring is compressed, and the tip is moved over the peripheral wall surface of the guide hole. It slides in the thickness direction.

JP 2006-208329 A JP 2006-300581 A

  By the way, in recent semiconductor devices, a plurality of conductive pads are arranged at a higher density, and the interval between the conductive pads is further narrowed.

  In order to cope with this semiconductor device, when the coil spring probes are arranged at a narrow pitch interval of 0.1 to 0.2 mm, the tip of the coil spring probe is placed on the peripheral wall surface of the lower guide hole at the time of measurement. By sliding, the load applied to the lower guide plate becomes very large.

For example, when the coil spring probes are arranged at a pitch interval of 0.1 mm, 10,000 coil spring probes exist per 1 cm ² area. If the load per one of the coil spring probes is about 4 g, a load of about 40 kg is applied to the area of 1 cm ² of the lower guide plate.

  When a large load is applied to the lower guide plate in this manner, the lower guide plate cannot withstand the load because the thickness is as thin as about 0.5 mm.

  Accordingly, it is conceivable to increase the thickness of the lower guide plate so that the lower guide plate can withstand the load, but the tip of the coil spring probe slides on the peripheral wall surface of the lower guide hole. The moving area increases. For this reason, when the said front-end | tip part moves in the said lower side guide hole, a sliding failure may generate | occur | produce by being caught. In addition, when such a sliding failure occurs, load hysteresis between the forward movement and the backward movement in the guide hole of the tip end portion increases.

The present invention was devised in view of the above circumstances, and an object of the present invention is to provide load hysteresis between the forward movement and the backward movement in the guide hole at the tip even if the thickness of the guide plate is increased. It is an object of the present invention to provide a vertical probe that can reduce the above.

In order to solve the above-described problems, the vertical probe of the present invention is passed through a guide hole penetrating in the thickness direction of a guide plate having a thickness of 1.2 to 3.0 mm so that the tip portion is movable in the thickness direction. A probe main body having the tip portion and the rear end portion, and a conductive guide tube in which the rear end portion of the probe main body is slidably inserted in the length direction thereof, and A first support portion provided in the probe body; a second support portion provided in the guide tube; and the probe body is inserted and disposed between the first and second support portions. A first coil spring; a connection portion; and a second coil spring. The outer surface of the distal end portion of the probe main body is in a state where the distal end portion is passed through the guide hole. 1st flange part contact | abutted to a part of wall surface A rear end portion of the probe main body is provided between the first and second large diameter portions and the first and second large diameter portions respectively contacting the inner peripheral surface of the guide tube. And a small-diameter portion whose outer diameter is smaller than the first and second large-diameter portions, and the guide tube has an inner side located between the first and second large-diameter portions. and crimping portions of the convex is provided, the caulked portion is brought into contact with the second large diameter portion, said first coil spring first, and is compressed between the second supporting portion, wherein The guide tube has an opening on one end side where the rear end portion of the probe main body is inserted and an opening on the other end side, and the end surface of the edge portion of the opening on the one end side of the guide tube is the second end surface. The connecting portion closes the opening on the other end side of the guide tube, and the second coil spring is attached to the guide tube. Is input, are arranged in a non-compressed state between the rear end portion of the probe main body and the connecting part.

In such a vertical probe, when the tip portion comes into contact with the conductive pad of the semiconductor device and is pressed, the tip portion moves through the guide hole in the thickness direction. Then, the first flange portion slides on the wall surface of the guide hole in the thickness direction. When the tip of the probe main body comes into contact with the conductive pad of the semiconductor device and is pressed, the first coil spring is compressed between the first and second support portions. Thereby, it becomes easy to ensure a predetermined contact pressure required for electrical connection between the tip of the probe body and the conductive pad of the semiconductor device.

  In the case of the vertical probe according to the present invention, the first flange portion provided on the outer surface of the tip portion is in contact with the wall surface of the guide hole in a state where the tip portion is passed through the guide hole of the guide plate. It has become. For this reason, when the tip portion comes into contact with the conductive pad of the semiconductor device and is pressed, the tip portion moves in the guide hole in the thickness direction of the guide plate. At this time, since the first flange portion slides on the wall surface of the guide hole of the guide plate in the thickness direction, the sliding area can be greatly reduced as compared with the conventional example. Therefore, even if the thickness of the guide plate is increased to 1.2 to 3.0 mm, the vertical probe can reduce the load hysteresis between the forward movement and the backward movement in the guide hole at the tip.

  Embodiments of the present invention will be described below.

  First, a vertical probe unit according to a first embodiment of the present invention will be described with reference to the drawings. 1 is a schematic cross-sectional view of a vertical probe unit according to a first embodiment of the present invention, FIG. 2 is a schematic cross-sectional view showing a use state of the probe unit, and FIG. 3 is a vertical probe of the probe unit. It is a figure which shows the assembly procedure of.

  The vertical probe unit C shown in FIGS. 1 and 2 is used to measure the electrical income of the semiconductor device 10, and is a plurality of vertical probes that can contact the conductive pads 11 of the semiconductor device 10. A first guide plate 200 having a plurality of first guide holes 210 through which the tip portion 111 of the vertical probe 100 is movably passed, and a rear end portion of the vertical probe 100, respectively. A second guide plate 300 having a plurality of second guide holes 310 to be inserted, a spacer 400 interposed between the first and second guide plates 200, 300, and the surface of the second guide plate 300 And a connection board 500 attached to the board. This will be described in detail below.

  The vertical probe 100 includes a probe main body 110 that is a substantially cylindrical needle-like body, a holding member 120 that holds the rear end portion 113 of the probe main body 110 so as to be movable in the length direction thereof, and the probe main body 110. The first coil spring 130 is disposed concentrically around the intermediate portion 112, and the second coil spring 140 is disposed between the rear end portion 113 of the probe main body 110 and the holding member 120. Yes.

  The probe main body 110 has a tip portion 111 that is convex downward in a sectional view, an intermediate portion 112 that is continuous with the tip portion 111, and a rear end portion 113 that is continuous with the intermediate portion 112.

  The distal end portion 111 has a contact portion 111a having an outer diameter of Φ0.08 mm and a length dimension of 0.5 to 1.0 mm, an outer diameter continuous to the contact portion 111a of Φ0.1 mm, and a length dimension. Has a guide portion 111b having a diameter of 1.0 to 2.0 mm and a first flange portion 111c which is an annular body having an outer diameter of Φ0.11 mm provided on the outer peripheral surface of the rear end portion of the guide portion 111b.

  The first flange portion 111c abuts on a circumferential region of a part of the peripheral wall surface of the large-diameter hole portion 212 of the first guide hole 210 of the first guide plate 200, and according to the movement of the probe main body 110, It slides on the peripheral wall surface of the large-diameter hole 212.

  Further, the front end surface of the guide portion 111 b can come into contact with the bottom portion of the large-diameter hole portion 212 of the first guide hole 210. This prevents the probe main body 110 from falling out of the first guide hole 210. The rear end surface of the guide portion 111b is a first support portion 111b1 that supports one end portion of the first coil spring 130 in the length direction.

  The front end surface of the contact portion 111a is a portion that contacts the conductive pad 11 of the semiconductor device 10, and is crowned.

  As for this contact part 111a, the outer peripheral surface of the intermediate part is depressed compared with another part, The outer diameter is (PHI) 0.07mm. That is, the front end portion and the rear end portion of the contact portion 111a are the second and third flange portions 111a1 and 111a2. The second and third flange portions 111a1 and 111a2 are in contact with a part of the circumferential region of the peripheral wall surface of the small-diameter hole portion 211 of the first guide hole 210, respectively, and the small-diameter It slides on the peripheral wall surface of the hole 211.

  The intermediate portion 112 has an outer diameter of Φ0.06 mm, and guides the first coil spring 130 when the first coil spring 130 is elastically deformed. This prevents the first coil spring 130 from being distorted in the width direction.

  The rear end portion 113 has a small diameter of an outer diameter of Φ0.05 mm located between the first and second large diameter portions 113a and 113b having an outer diameter of Φ0.065 mm and the first and second large diameter portions 113a and 113b. Part 113c.

  The first and second large-diameter portions 113 a and 113 b are in contact with a part of the circumferential area of the inner peripheral surface of the guide tube 121 of the holding member 120, and the guides according to the movement of the probe main body 110. It slides on the inner peripheral surface of the pipe 121. The rear end portion of the second large diameter portion 113b is substantially conical, and supports one end portion of the second coil spring 140 in the length direction. Further, the distal end surface of the second large-diameter portion 113b can come into contact with the caulking portion 121b of the holding member 120, thereby preventing the probe main body 110 from falling off the holding member 120.

  The small diameter portion 113c has a small outer diameter to avoid interference with the caulking portion 121b of the holding member 120.

  The holding member 120 closes the opening on the other end side in the length direction of the guide tube 121 and a cylindrical guide tube 121 made of nickel alloy having an outer diameter of Φ0.11 mm and an inner diameter of Φ0.075 mm. And a connecting portion 122 (which forms the bottom of the guide tube 121) which is a cylindrical body having conductivity.

  The guide tube 121 is configured such that the rear end portion 113 of the probe main body 110 is slidably inserted in the length direction from an opening on one end side in the length direction. One end surface of the guide tube 121 serves as a second support portion 121 a that supports the other end portion of the first coil spring 130 in the length direction.

  Further, a caulking portion 121 b is provided on the peripheral wall surface of the intermediate portion of the guide tube 121. When the leading end surface of the second large-diameter portion 113b of the probe main body 110 comes into contact with the crimped portion 121b, the first coil spring 130 is connected to the first support portion 111b1 of the probe main body 110 and the second of the holding member 120. The support portion 121a is compressed by about 0.3 mm.

  The other end of the connecting portion 122 in the length direction is conical. The other end portion of the connection portion 122 contacts the electrode 510 of the connection substrate 500, whereby the vertical probe 100 is electrically connected to the connection substrate 500. Further, one end portion in the length direction of the connection portion 122 is also conical, and supports the other end portion in the length direction of the second coil spring 140.

  The first coil spring 130 is configured by winding a wire such as spring stainless steel, a spring piano wire, or an amorphous alloy. The first coil spring 130 has a length dimension of 1.5 to 3.0 mm and an outer diameter of Φ0.1 to 0.15 mm. The first coil spring 130 is disposed concentrically around the intermediate portion 112 of the probe main body 110 and is compressed between the first support portion 111b1 of the distal end portion 111 and the second support portion 121a of the holding member 120. Arranged in a state. One end and the other end of the first coil spring 130 in the length direction are coated with an insulator 131 such as Teflon (registered trademark).

The second coil spring 140 is configured by winding a wire such as spring stainless steel, a spring piano wire, or an amorphous alloy. The second coil spring 140 has a length dimension of 0.5 to 1.5 mm and an outer diameter of Φ0.06 to 0.07 mm. The second coil spring 140 is placed in the holding member 120 is disposed in a non-compressed state between the rear end portion 113 of the connecting portion 122 and the probe body 110 of the holding member 120.

  The first guide plate 200 is a plate body made of ceramics or the like having a thickness of 1.2 to 3.0 mm. In the first guide plate 200, a plurality of first guide holes 210 penetrating the first guide plate 200 in the thickness direction correspond to the arrangement of the conductive pads 11 of the semiconductor device 10. They are arranged at a pitch interval of 0.2 mm (for example, in a matrix).

  The first guide hole 210 has a small diameter hole 211 having a diameter of 0.09 mm and a depth of 0.2 to 0.5 mm, and a diameter of 0.12 mm continuous to the small diameter hole 211 and a depth of 1.0. And a large-diameter hole 212 that is ˜2.5 mm.

  Between the peripheral wall surface of the small diameter hole portion 211 and the outer peripheral surface of the intermediate portion of the contact portion 111a of the probe main body 110, the second and third flange portions 111a1 and 111a2 of the contact portion 111a are the peripheral wall surface of the small diameter hole portion 211. A first dust collection space α1 that accommodates dust generated by sliding on the peripheral wall surfaces of the second and third flange portions 111a1 and 111a2 or the small-diameter hole portion 211 is formed.

  The first flange portion 111c of the guide portion 111b has a large diameter between the peripheral wall surface of the large diameter hole portion 212 and the outer peripheral surface of the portion other than the first flange portion arrangement portion of the guide portion 111b of the probe main body 110. A second dust collection space α2 that accommodates dust generated by sliding on the peripheral wall surface of the hole portion 212 and scraping the peripheral wall surface of the first flange portion 111c or the large-diameter hole portion 212 is formed.

  The second guide plate 300 is a plate made of ceramic or the like having an insulation property with a thickness of 0.5 to 2.0 mm. In the second guide plate 300, a plurality of second guide holes 310 penetrating the second guide plate 300 in the thickness direction are arranged so as to correspond to the arrangement of the first guide holes 210. .

  The second guide hole 310 is a hole having a diameter of 0.12 mm, and the rear end portion of the holding member 120 of the vertical probe 100 (that is, the rear end portion of the vertical probe 100) is inserted therein.

  The spacer 400 is an annular frame made of ceramics having a thickness of 1 to 3 mm.

  The connection board 500 is a known printed wiring board. A plurality of electrodes 510 are disposed on the connection substrate 500 so as to correspond to the arrangement of the second guide holes 310. The electrode 510 is in contact with and electrically connected to the connection portion 122 of the vertical probe 100 in a state where the connection substrate 500 is attached to the upper surface of the second guide plate 300. Note that the vertical probe unit C is electrically connected to a measuring apparatus described later through the connection substrate 500.

  Hereinafter, the assembly procedure of the vertical probe 100 and the assembly procedure of the vertical probe unit C will be described.

  First, as shown in FIG. 3, the rear end portion 113 of the probe main body 110 is inserted into the first coil spring 130. Then, the one end part of the length direction of the 1st coil spring 130 contact | abuts to the 1st support part 111b1 of the guide part 111b of the probe main body 110. FIG.

  Thereafter, the rear end portion 113 of the probe main body 110 is inserted into the guide tube 121 of the holding member 120. Then, the first and second large-diameter portions 113 a and 113 b of the rear end portion 113 are in contact with a part of the circumferential region of the inner peripheral surface of the holding member 120. And the other end part of the length direction of the 1st coil spring 130 contact | abuts to the 2nd support part 121a of the guide part 111b. In this way, the first coil spring 130 is disposed between the first and second support portions 111b1 and 121a.

  Thereafter, the guide tube 121 is moved about 0.3 mm toward the distal end portion 111 side of the probe body 110, and the first coil spring 130 is compressed between the first and second support portions 111b1 and 121a. In this state, a portion facing the small diameter portion 113c of the probe main body 110 in the intermediate portion of the guide tube 121 is pressed with a jig (not shown) to be plastically deformed inward. This plastic deformation part becomes the crimping part 121b. As a result, the second large-diameter portion 113b of the rear end portion 113 of the probe main body 110 abuts on the caulking portion 121b, and the first coil spring 130 is compressed between the first and second support portions 111b1 and 121a. It is arranged with. As a result, the load by which the first coil spring 130 urges the probe main body 110 toward the tip end is about 3.5 g.

  Thereafter, the second coil spring 140 is inserted into the guide tube 121. Then, the one end part of the length direction of the 2nd coil spring 140 contact | abuts to the 2nd large diameter part 113b of the rear-end part 113 of the probe main body 110. FIG. At this time, the top of the conical rear end of the second large-diameter portion 113 b enters into one end of the second coil spring 140.

  Thereafter, the connecting portion 122 is fitted into the opening on the other end side in the length direction of the guide tube 121 to close the opening. At this time, the conical one end portion of the connecting portion 122 in the length direction is opposed to the other end portion of the second coil spring 140 in the length direction with a gap of about 0.15 mm. That is, the second coil spring 140 is disposed between the rear end portion 113 of the probe main body 110 and the connection portion 122 in an uncompressed state. In this way, the vertical probe 100 is assembled.

  Meanwhile, the spacer 400 is bonded to the upper surface of the first guide plate 200. Then, the second guide plate 300 is bonded to the upper surface of the spacer 400 while aligning the plurality of first guide holes 210 and the plurality of second guide holes 310.

  Thereafter, the plurality of vertical probes 100 are respectively inserted from the plurality of second guide holes 310 of the second guide plate 300. Then, the tip portions 111 of the plurality of vertical probes 100 are respectively fitted into the plurality of first guide holes 210 of the first guide plate 200. Thereby, the first flange portion 111c of the tip portion 111 abuts on a circumferential region of a part of the peripheral wall surface of the large-diameter hole portion 212 of the first guide hole 210 of the first guide plate 200, and the second, The third flange portions 111 a 1 and 111 a 2 are in contact with partial circumferential regions at different height positions on the peripheral wall surface of the small diameter hole portion 211 of the first guide hole 210.

  Then, the distal end surfaces of the guide portions 111 b of the distal end portions 111 of the plurality of vertical probes 100 are in contact with the bottom portions of the large-diameter hole portions 212 of the plurality of first guide holes 210. Thereby, the vertical probe 100 is prevented from falling off from the first guide hole 210.

  In this manner, the tips 111 of the plurality of vertical probes 100 are respectively passed through the plurality of first guide holes 210 of the first guide plate 200, so that the vertical probes 100 are connected to the plurality of semiconductor devices 10. Corresponding to the arrangement of the conductive pads 11, the conductive pads 11 are arranged at a pitch interval of 0.1 to 0.2 mm (for example, in a matrix).

  Thereafter, the connection portions 122 of the plurality of vertical probes 100 and the plurality of electrodes 510 are aligned, and the connection portions 122 are brought into contact with the electrodes 510, respectively. Then, the connection substrate 500 is brought into surface contact with the upper surface of the second guide plate 300 against the urging force of the first and second coil springs 130 and 140 of the plurality of vertical probes 100, and both are bonded in this state. . Then, the plurality of connection portions 122 are pressed by the plurality of electrodes 510, and the plurality of connection portions 122 and the guide tube 121 move about 0.15 mm toward the distal end portion 111 side of the vertical probe 100, respectively. In addition, when the plurality of connecting portions 122 are pressed against the plurality of electrodes 510, stable electrical connection between them is achieved.

  Thereby, the plurality of first coil springs 130 are further compressed between the plurality of first and second support portions 111b1 and 121a, respectively.

At the same time, the other end portions in the length direction of the plurality of second coil springs 140 respectively contact one end portion in the length direction of the plurality of connection portions 122. Accordingly, the plurality of second coil springs 140 are disposed in an uncompressed state between the rear end portions 113 of the plurality of probe main bodies 110 and the plurality of connection portions 122.

  The vertical probe unit C manufactured in this way is attached to a prober of a measurement apparatus (not shown) and used for a measurement test for measuring the electrical income of the semiconductor device 10. Hereinafter, the measurement process will be described, and the operation of each part of the vertical probe 100 will be described.

  First, the prober is operated. Then, the semiconductor device 10 is sequentially conveyed to the measurement position. When the semiconductor device 10 is positioned at the measurement position, the vertical probe unit C is brought relatively close to the semiconductor device 10, and the tips 111 of the plurality of vertical probes 100 of the vertical probe unit C are moved to the plurality of semiconductor devices 10. The conductive pads 11 are brought into contact with each other. Then, due to the urging forces of the plurality of first coil springs 130, the plurality of probe bodies 110 are pressed against the plurality of conductive pads 11 of the semiconductor device 10 with a contact load of about 4.3 g per pin, respectively.

  Then, the vertical probe unit C is further moved closer to the semiconductor device 10 by about 0.15 mm, and the plurality of vertical probes 100 are brought into pressure contact with the plurality of conductive pads 11 (that is, an overdrive of about 0.15 mm is applied). .)

  Then, the tip surfaces of the contact portions 111a of the probe bodies 110 of the plurality of vertical probes 100 are pressed by the plurality of conductive pads 11 of the semiconductor device 10, respectively, and the probe bodies 110 move upward in the drawing (this is the forward movement). .)

  Then, the second and third flange portions 111a1 and 111a2 of the contact portions 111a of the plurality of vertical probes 100 are illustrated on the peripheral wall surface of the small-diameter hole portion 211 of the first guide hole 210 of the first guide plate 200. The first flange portion 111c slides on the peripheral wall surface of the large-diameter hole portion 212 of the first guide hole 210 in the upward direction in the figure. The first and second large-diameter portions 113a and 113b of the rear end portion 113 slide on the inner peripheral surface of the guide tube 121 in the upward direction in the figure.

  At this time, the first coil springs 130 of the plurality of vertical probes 100 are further compressed between the plurality of first and second support portions 111b1 and 121a, respectively. As a result, the contact load per pin of the vertical probe 100 with respect to the conductive pad 11 becomes 5 g.

  At the same time, the plurality of second coil springs 140 are respectively compressed between the rear end portions 113 of the plurality of probe main bodies 110 and the plurality of connection portions 122. As a result, the contact load per pin of the vertical probe 100 with respect to the conductive pad 11 is 8 g. That is, the biasing force of the second coil spring 140 (that is, a contact load of about 3 g per pin) is applied to the biasing force of the first coil spring 130 (that is, a contact load of about 5 g per pin). As a result, the probe main body 110 is pressed against the conductive pad 11 of the semiconductor device 10 with a contact load of about 8 g.

Thus, when performing the overdrive, the biasing force of the second coil spring 140 is applied to the biasing force of the first coil spring 130, and the contact load of the probe body 110 with respect to the conductive pad 11 is rapidly increased from 5g to 8g. It is like that. As a result, the probe body 110 breaks through the oxide film on the conductive pad 11 and presses against the conductive pad 11. For this reason, the contact resistance between the probe main body 110 and the conductive pad 11 is improved, and stable electrical connection between them can be achieved.

  In this pressure contact state, electrical signals respectively generated from the plurality of conductive pads 11 are transmitted to the first and second large diameter portions 113a and 113b of the plurality of contact portions 111a, the guide portion 111b, the intermediate portion 112, and the rear end portion 113. Then, it flows to the plurality of electrodes 510 of the connection substrate 500 through the guide tube 121 and the connection portion 122. In this way, the electrical income property of the semiconductor device 10 is measured by the measuring apparatus. Since the first coil spring 130 is coated with an insulator 131 at one end and the other end in the length direction, the electric signal does not flow through the first coil spring 130, and the electric signal Attenuation is prevented.

  Thereafter, the vertical probe unit C is moved away from the semiconductor device 10. Then, the probe main body 110 moves downward in the figure by the urging force of the first and second coil springs 130 and 140 of the plurality of vertical probes 100 (this is the backward movement).

  At this time, the second and third flange portions 111a1 and 111a2 of the contact portions 111a of the plurality of vertical probes 100 are illustrated on the peripheral wall surface of the small-diameter hole portion 211 of the first guide hole 210 of the first guide plate 200. The first flange portion 111c slides on the peripheral wall surface of the large-diameter hole portion 212 of the first guide hole 210 in the downward direction as shown in the drawing. The first and second large diameter portions 113a and 113b of the rear end portion 113 slide on the inner peripheral surface of the guide tube 121 in the downward direction in the figure.

  In addition, when the probe main body 110 moves in the forward path and the backward path, dust generated by sliding of the second and third flange portions 111a1 and 111a2 is caused by the outer peripheral surface of the intermediate portion of the contact portion 111a and the small diameter hole portion 211. The dust that is accommodated in the first dust collection space α1 between the peripheral wall surface and generated by the sliding of the first flange portion 111c is the outer periphery of the portion other than the first flange portion arrangement portion of the guide portion 111b. It is accommodated in the second dust collection space α2 between the surface and the peripheral wall surface of the large-diameter hole 212.

Here, a measurement experiment of load hysteresis between the forward movement and the backward movement in the first guide hole 210 of the experimental vertical probe of the experimental vertical probe unit (not shown) in the measurement test, and the vertical probe unit A measurement experiment of load hysteresis between the forward movement and the backward movement in the first guide hole 210 of the C vertical probe 100 was performed. In the experimental vertical probe unit, the experimental vertical probe is not provided with the first flange portion 111c at the distal end portion 111 of the probe main body 110 of the vertical probe 100, and the middle of the contact portion 111a. The outer peripheral surface of the part is not recessed. That is, the experimental vertical probe unit is different from the vertical probe unit C in that the experimental vertical probe does not have the first, second, and third flange portions 111c, 111a1, and 111a2. Others are the same.

  As a result of this experiment, in the experimental vertical probe unit, substantially the entire peripheral surface of the tip portion of the experimental vertical probe slides on the peripheral wall surface of the first guide hole 210 of the first guide plate 200. Therefore, as shown in the following Table 1 (a graph showing the characteristics of the movement amount (μm) -load (gf)), it was found that the difference between the forward movement and the backward movement is large, and the load hysteresis is large. In addition, the upper graph line in Table 1 indicates the forward movement, and the lower graph line indicates the backward movement.

  In contrast, in the vertical probe unit C, when the distal end portion 111 of the vertical probe 100 moves in the forward path and the backward path, the second and third flange portions 111a1 and 111a2 of the distal end portion 111 are the first. The guide hole 210 slides downward on the peripheral wall surface of the small-diameter hole portion 211 of the guide hole 210, and the first flange portion 111 c of the tip portion 111 of the large-diameter hole portion 212 of the first guide hole 210 is It slides downward on the peripheral wall surface in the figure.

  That is, since the sliding area between the tip 111 of the vertical probe 100 and the peripheral wall surface of the first guide hole 210 can be greatly reduced, the first guide plate 200 having a thickness of 1.2 to 3.0 mm. As shown in Table 2 below (a graph showing the characteristics of the movement amount (μm) -load (gf)), the forward movement in the first guide hole 210 of the distal end portion 111 of the probe main body 110 is shown in FIG. It has been found that the load hysteresis with the return path movement can be reduced. In addition, the upper graph line in Table 2 indicates the forward movement, and the lower graph line indicates the backward movement.

  Moreover, in the vertical probe unit C, dust generated by the sliding of the second and third flange portions 111a1 and 111a2 is accommodated in the first dust collecting space α1, and generated by the sliding of the first flange portion 111c. The garbage to be stored is accommodated in the second garbage collection space α2. Therefore, the dust is prevented from rising from the first guide hole 210 onto the first guide plate 200 and adhering to the exposed first coil spring 130 of the vertical probe 100 to hinder its elastic deformation. can do.

  Next, a vertical probe unit according to a second embodiment of the present invention will be described with reference to the drawings. FIG. 4 is a schematic cross-sectional view of a vertical probe unit according to the second embodiment of the present invention.

  The vertical probe unit C ′ shown in FIG. 4 differs from the vertical probe unit C of the first embodiment in the shape of the tip 111 ′ of the vertical probe 100 ′ and the shape of the holding member 120 ′. Hereinafter, the difference will be described in detail, and the description of overlapping portions will be omitted. Note that the symbol of the vertical probe is marked with 'as described above.

  The tip 111 ′ has a contact portion 111a ′ having an outer diameter of Φ0.08 mm and a length dimension of 0.5 to 1.0 mm, an outer diameter connected to the contact portion 111a ′ of Φ0.1 mm, and A guide portion 111b ′ having a length dimension of 1.0 to 2.0 mm, and a first annular body having an outer diameter of Φ0.11 mm provided on the outer peripheral surface of the rear end portion and the front end portion of the guide portion 111b ′. And second flange portions 111c ′ and 111d ′.

  The first and second flange portions 111 c ′ and 111 d ′ are respectively provided in the circumferential regions of different portions of the height of the peripheral wall surface of the large-diameter hole portion 212 of the first guide hole 210 of the first guide plate 200. It abuts and slides on the peripheral wall surface of the large-diameter hole 212 in accordance with the movement of the probe main body 110 ′.

  Further, the second flange portion 111 d ′ is in contact with the bottom portion of the large-diameter hole portion 212 of the first guide hole 210. This prevents the probe main body 110 ′ from falling out of the first guide hole 210.

  The rear end surface of the guide portion 111b 'serves as a first support portion 111b1' that supports one end portion of the first coil spring 130 in the length direction.

  The contact portion 111 a ′ comes into contact with the peripheral wall surface of the small diameter hole portion 211 of the first guide hole 210, and slides on the peripheral wall surface of the small diameter hole portion 211 according to the movement of the probe main body 110. Yes.

  The front end surface of the contact portion 111 a ′ is a portion that contacts the conductive pad 11 of the semiconductor device 10 and is crowned.

  The holding member 120 ′ has a cylindrical guide tube 121 ′ made of nickel alloy having an outer diameter of Φ0.11 mm and an inner diameter of Φ0.075 mm, and the other end side in the length direction of the guide tube 121 ′. And a conductive connecting portion 122 ′ that closes the opening.

  The guide tube 121 ′ is the same as the guide tube 121.

  The connecting portion 122 'is a hemispherical dome having a hollow inside. The connection portion 122 ′ is provided with a ring body 122 a ′ having an inner diameter smaller than that of the opening at the edge of the opening on the bottom surface. This ring body 122 a ′ supports the other end of the second coil spring 140 in the length direction. Further, the top of the connection portion 122 ′ is in contact with the electrode 510 of the connection substrate 500, so that the vertical probe 100 is electrically connected to the connection substrate 500.

  Hereinafter, a method for assembling the vertical probe unit C ′ having such a configuration will be described.

  First, like the vertical probe 100, the first coil spring 130 ', the guide tube 121', and the second coil spring 140 'are attached to the probe body 110'. Then, the connecting portion 122 ′ is fitted into the opening on the other end side in the length direction of the guide tube 121 ′ to close the opening. At this time, the ring body 122a 'of the connection portion 122' faces the other end portion in the length direction of the second coil spring 140 'with a gap of about 0.15 mm. That is, the second coil spring 140 is disposed in an uncompressed state between the rear end portion 113 of the probe main body 110 and the ring body 122 a ′ of the connection portion 122. In this way, the vertical probe 100 is assembled.

  On the other hand, like the vertical probe unit C, the first and second guide plates 200 and 300 and the spacer 400 are bonded and combined.

  Thereafter, the plurality of vertical probes 100 ′ are respectively inserted from the plurality of second guide holes 310 of the second guide plate 300. Then, the tip portions 111 ′ of the plurality of vertical probes 100 ′ are respectively fitted into the plurality of first guide holes 210 of the first guide plate 200. Accordingly, the first and second flange portions 111c ′ and 111d ′ of the tip portion 111 ′ have different height positions on the peripheral wall surface of the large-diameter hole portion 212 of the first guide hole 210 of the first guide plate 200. The contact portion 111 a ′ of the tip end portion 111 ′ is in contact with the peripheral wall surface of the small diameter hole portion 211 of the first guide hole 210.

  The second flange portions 111 d ′ of the tip portions 111 ′ of the plurality of vertical probes 100 ′ are in contact with the bottoms of the large diameter holes 212 of the plurality of first guide holes 210. This prevents the vertical probe 100 ′ from falling off from the first guide hole 210.

  In this manner, the tips 111 of the plurality of vertical probes 100 ′ are respectively passed through the plurality of first guide holes 210 of the first guide plate 200, so that the vertical probes 100 are connected to the semiconductor device 10. Corresponding to the arrangement of the plurality of conductive pads 11, they are arranged at a pitch interval of 0.1 to 0.2 mm (for example, in a matrix).

  Thereafter, the connection portions 122 ′ of the plurality of vertical probes 100 ′ and the plurality of electrodes 510 are aligned, and the connection portions 122 ′ are brought into contact with the electrodes 510. Then, the connection substrate 500 is brought into surface contact with the upper surface of the second guide plate 300, and both are bonded in this state. Then, the plurality of connection portions 122 ′ are pressed by the plurality of electrodes 510, and the plurality of connection portions 122 ′ and the guide tube 121 ′ are moved about 0.15 mm toward the distal end portion 111 ′ side of the vertical probe 100 ′. . The plurality of connecting portions 122 ′ are pressed against the plurality of electrodes 510, respectively, so that stable electrical connection between them can be achieved.

  At this time, the plurality of first coil springs 130 ′ are further compressed between the plurality of first and second support portions 111 b 1 ′ and 121 a ′. At the same time, the other ends in the length direction of the plurality of second coil springs 140 ′ are in contact with the ring bodies 122 a ′ of the plurality of connection portions 122 ′. Accordingly, the plurality of second coil springs 140 ′ are arranged in an uncompressed state between the rear end portions 113 ′ of the plurality of probe main bodies 110 ′ and the ring bodies 122 a ′ of the plurality of connection portions 122 ′.

  Similarly to the vertical probe unit C, the vertical probe unit C ′ assembled in this way is attached to a prober of a measuring apparatus and used to measure the electrical income of the semiconductor device 10. Hereinafter, the measurement process will be described.

  First, as in the first embodiment, the vertical probe unit C ′ is brought relatively close to the semiconductor device 10 transported to the measurement position, and the tips of the plurality of vertical probes 100 ′ of the vertical probe unit C ′ are placed. 111 ′ is brought into contact with the plurality of conductive pads 11 of the semiconductor device 10. Then, due to the urging force of the plurality of first coil springs 130 ′, the tips 111 of the plurality of probe bodies 110 ′ are applied to the plurality of conductive pads 11 of the semiconductor device 10 with a contact load of about 4.3 g per pin. , Respectively.

  Then, the vertical probe unit C ′ is further moved closer to the semiconductor device 10 by about 0.15 mm, and the plurality of vertical probes 100 ′ are pressed against the plurality of conductive pads 11 (that is, an overdrive of about 0.15 mm). Add).

  Then, the tip surfaces of the contact portions 111a ′ of the probe bodies 110 ′ of the plurality of vertical probes 100 ′ are respectively pressed by the plurality of conductive pads 11 of the semiconductor device 10, and the probe bodies 110 ′ move upward in the drawing ( This is outbound travel.)

  Then, the contact portions 111 a ′ of the plurality of vertical probes 100 ′ move upward on the peripheral wall surface of the small-diameter hole portion 211 of the first guide hole 210 of the first guide plate 200 (that is, the first guide plate 200). The first and second flange portions 111c ′ and 111d ′ are directed upward on the peripheral wall surface of the large-diameter hole portion 212 of the first guide hole 210 of the first guide plate 200. The first and second large diameter portions 113a ′ and 113b ′ of the rear end portion 113 ′ slide in the upward direction on the inner peripheral surface of the guide tube 121 ′.

  At this time, the first coil springs 130 ′ of the plurality of vertical probes 100 ′ are further compressed between the first and second support portions 111 b 1 ′ and 121 a ′. As a result, the contact load per pin of the vertical probe 100 ′ with respect to the conductive pad 11 becomes 5 g.

  At the same time, the second coil spring 140 ′ is compressed between the rear end portion 113 ′ of the probe main body 110 ′ and the ring body 122 a ′ of the connection portion 122 ′. As a result, the contact load per pin of the vertical probe 100 ′ with respect to the conductive pad 11 becomes 8 g. That is, the biasing force of the first coil spring 130 ′ (ie, a contact load of about 5 g per pin) and the biasing force of the second coil spring 140 ′ (ie, a contact load of about 3 g per pin). As a result, the probe body 110 ′ is pressed against the conductive pad 11 of the semiconductor device 10 with a contact load of about 8 g.

Thus, when performing the overdrive, the biasing force of the second coil spring 140 ′ is applied to the biasing force of the first coil spring 130 ′, and the contact load of the probe body 110 ′ with respect to the conductive pad 11 is set to 5 to 8 g. It is supposed to rise rapidly. As a result, the probe main body 110 ′ breaks through the oxide film on the conductive pad 11 and presses against the conductive pad 11. For this reason, the contact resistance between the probe main body 110 ′ and the conductive pad 11 is improved, and stable electrical connection between them can be achieved.

  In this pressure contact state, the electrical signals generated from the plurality of conductive pads 11 are the first and second large diameter portions 113a of the contact portion 111a ′, the guide portion 111b ′, the intermediate portion 112 ′, and the rear end portion 113 ′. It flows to the plurality of electrodes 510 of the connection substrate 500 through ', 113b', the guide tube 121 'and the connection part 122'. In this way, the electrical income of the semiconductor device 10 is measured by the measuring apparatus. Since the first coil spring 130 ′ is coated with an insulator 131 ′ at one end and the other end in the length direction, the electric signal does not flow through the first coil spring 130 ′. Attenuation of electrical signals is prevented.

  Thereafter, the vertical probe unit C ′ is moved away from the semiconductor device 10. Then, the probe main body 110 ′ moves downward in the figure by the urging force of the first and second coil springs 130 ′ and 140 ′ of the plurality of vertical probes 100 ′ (this is the backward movement).

  At this time, the contact portions 111 a ′ of the plurality of vertical probes 100 ′ move downward on the peripheral wall surface of the small diameter hole portion 211 of the first guide hole 210 of the first guide plate 200 (that is, the first guide plate). 200 in the thickness direction), and the first and second flange portions 111c ′ and 111d ′ are illustrated on the peripheral wall surface of the large-diameter hole portion 212 of the first guide hole 210 of the first guide plate 200. The first and second large-diameter portions 113a ′ and 113b ′ of the rear end portion 113 ′ slide downward on the inner peripheral surface of the guide tube 121 ′.

  In addition, when the probe main body 110 ′ moves in the forward movement and the backward movement, dust generated by the sliding of the first and second flange portions 111c ′ and 111d ′ is the first and second flanges of the guide portion 111b. It is accommodated in the third dust collection space α3 between the outer peripheral surface of the portion other than the portion disposing portion and the peripheral wall surface of the large diameter hole portion 212.

  Even in the case of such a vertical probe unit C ′, the first and second flange portions of the distal end portion 111 when the distal end portion 111 ′ of the vertical probe 100 ′ moves in the forward path and the backward path. 111c ′ and 111d ′ slide in the downward direction on the peripheral wall surface of the large-diameter hole 212 of the first guide hole 210 in the drawing. For this reason, the sliding area between the distal end portion 111 ′ of the vertical probe 100 ′ and the peripheral wall surface of the first guide hole 210 can be greatly reduced, so that the first thickness of 1.2 to 3.0 mm is obtained. Even if the guide plate 200 is used, it is possible to reduce the load hysteresis between the forward movement and the backward movement in the tip 111 ′ of the vertical probe 100 ′ and the first guide hole 210.

  Moreover, dust generated by sliding of the first and second flange portions 111c ′ and 111d ′ is caused by the outer peripheral surface and the large-diameter hole of the portion other than the first and second flange portion arrangement portions of the guide portion 111b ′. It is accommodated in the third dust collection space α3 between the peripheral wall surface of the portion 212. For this reason, the dust rises from the first guide hole 210 onto the first guide plate 200, adheres to the exposed first coil spring 130 'of the vertical probe 100', and inhibits its elastic deformation. Can be prevented.

  As for the vertical probes 100 and 100 ', a vertical probe whose tip is movably moved in the thickness direction through a guide hole penetrating in the thickness direction of a guide plate having a thickness of 1.2 to 3.0 mm. As long as the outer surface of the tip portion is provided with a first flange portion that comes into contact with a part of the wall surface of the guide hole in a state where the tip portion is passed through the guide hole, it is arbitrary. The design can be changed.

  FIG. 5 is a schematic cross-sectional view showing a design change example of the vertical probe, and FIG. 6 is a schematic front view showing another design change example of the vertical probe.

  The vertical probe has been described as being a coil spring probe, but is not limited thereto.

  The probe main body 110 ′ has a cylindrical shape, but is not limited thereto. In addition, as for the shape of the tip portions 111 and 111 ′, the contact portions 111a and 111a ′ and the guide portions 111b and 111b ′ are included. However, the tip portions 111 and 111 ′ can be inserted into the guide holes and have at least one of the outer surfaces. The design can be arbitrarily changed as long as the flange portion is provided.

  When the contact portions 111a and 111a 'have a length of 0.5 mm or less, it is not necessary to provide a recess in the intermediate portion. However, it is not limited to this. Further, the shape of the front end surface of the contact portion can be arbitrarily set, and can be, for example, a conical shape.

  The shapes of the intermediate portions 112 and 112 ′ and the rear end portions 113 and 113 ′ can be arbitrarily changed. For example, when the vertical probe is another coil spring probe, as shown in FIG. 5, the intermediate portion and the rear end portion of the probe main body can be formed into a cylindrical body. In this case, the holding member may be a rod-like body inserted into the cylindrical body, and the coil spring may be held between the end surface of the cylindrical body and the flange portion of the holding member. Further, when the vertical probe is not a coil spring probe, as shown in FIG. 6, the intermediate portion may be curved in a substantially U shape.

  The holding members 120 and 120 'have the guide pipes 121 and 121' and the connecting portions 122 and 122 ', but are not limited thereto. For example, as described above, it may be a rod-shaped body. In this case, the said cylindrical body is hold | maintained by guiding the said cylindrical body movably.

  The first and second coil springs 130, 130 ′, 140, and 140 ′ may be any one that can urge the probe main body in a direction protruding from the guide hole, and can be replaced with an elastic resin or the like. . In addition, whether or not the first coil spring is coated with the insulator 131 is arbitrary. In the case of coating, it is sufficient that at least a part is coated with the insulator 131. The second coil spring can be similarly coated with an insulator.

  The first support portions 111b1 and 111b1 ′ are the rear end surfaces of the guide portions 111b and 111b ′. However, the first support portions 111b1 and 111b1 ′ are not limited to this. For example, the first support portions 111b1 and 111b1 ′ are protrusions or the like separately provided on the probe body. be able to. Similarly, the second support portions 121a and 121a 'are not limited to the end face of the guide tube 121, and may be, for example, protrusions provided separately on the holding member.

  The vertical probe units C and C ′ include a vertical probe and a guide plate having a thickness of 1.2 to 3.0 mm. The guide plate has a guide hole penetrating in the thickness direction. The vertical probe has a tip portion that is movably moved in the thickness direction, and the outer surface of the tip portion has the tip portion passed through the guide hole. As long as the 1st flange part contact | abutted to a part of wall surface of a guide hole is provided, it can set arbitrarily.

  Accordingly, the first guide plate 200 only needs to be provided with a plurality of first guide holes 210 penetrating in the thickness direction, and the arrangement thereof is arbitrary corresponding to the arrangement of the conductive pads 11 of the semiconductor device 10. The design can be changed.

  The first guide plate 200 has a thickness of 1.2 to 3.0, but may have a thickness greater than that.

  The shape of the first guide hole 210 can be arbitrarily changed as long as it penetrates in the thickness direction of the first guide plate and can pass the tip of the vertical probe. . Although the pitch interval of the first guide holes 210 is 0.1 to 0.2 mm, other intervals may be used according to the pitch interval of the conductive pads 11 of the semiconductor device 10. That is, a plurality of vertical probes 100 may be arranged at intervals other than 0.1 to 0.2 mm.

  1, 2, and 4, the vertical probes 100 and 100 ′ and the first and second guide holes 210 and 310 are illustrated as four for convenience of illustration, but are not limited thereto. is not. Moreover, the dimension of each structural member mentioned above describes an example, and is not limited to the said dimension.

1 is a schematic cross-sectional view of a vertical probe unit according to a first embodiment of the present invention. It is a schematic sectional drawing which shows the use condition of the probe unit. It is a figure which shows the assembly procedure of the vertical probe of the probe unit. It is a schematic sectional drawing of the vertical probe unit which concerns on the 2nd Embodiment of this invention. It is a schematic sectional drawing which shows the example of a design change of a vertical probe. It is a typical front view which shows another example of a design change of a vertical probe.

Explanation of symbols

C Vertical Probe Unit 100 Vertical Probe 110 Probe Body 111 Tip 111c First Flange 111a1 Second Flange 111b1 First Support 120 Holding Member 121 Guide Tube 122 Connection (Bottom of Guide Tube)
121a 2nd support part 122 connection part 130 1st coil spring 131 insulator 140 2nd coil spring 200 1st guide plate 210 1st guide hole 300 2nd guide plate 310 2nd guide hole 500 connection board 10 Semiconductor Device 11 Conductive Pad

Claims (1)

A vertical probe in which a tip is movably moved in the thickness direction through a guide hole penetrating in a thickness direction of a guide plate having a thickness of 1.2 to 3.0 mm,
A probe body having the front end and the rear end;
A conductive guide tube in which the rear end of the probe body is slidably inserted in the length direction;
A first support provided on the probe body;
A second support provided on the guide tube;
A first coil spring in which the probe body is inserted and disposed between the first and second support parts;
A connection,
A second coil spring ,
The outer surface of the distal end portion of the probe body is provided with a first flange portion that comes into contact with a part of the wall surface of the guide hole with the distal end portion being passed through the guide hole.
The rear end portion of the probe main body is provided between the first and second large diameter portions, which are in contact with the inner peripheral surface of the guide tube, and the first and second large diameter portions. And a small diameter portion having a smaller outer diameter than the second large diameter portion,
The guide tube is provided with a convex caulking portion located inside between the first and second large diameter portions,
The caulking portion is in contact with the second large-diameter portion, and the first coil spring is compressed between the first and second support portions;
The guide tube has an opening on one end side where the rear end portion of the probe body is inserted, and an opening on the other end side,
The end surface of the edge of the opening on the one end side of the guide tube is the second support portion,
The connecting portion closes the opening on the other end side of the guide tube;
The second coil spring is inserted into the guide tube and disposed in an uncompressed state between the connection portion and the rear end portion of the probe body.

A vertical probe characterized by that.