JP4678319B2 - LIGHT EMITTING DEVICE AND ELECTRONIC DEVICE - Google Patents

Description

  The present invention relates to a light emitting device having a self light emitting element on a substrate, and an electronic apparatus.

  As a next-generation light emitting device, a light emitting device such as an organic EL device having an electroluminescence (EL / Electro Luminescence) element as a self light emitting element on a substrate is expected. In this organic EL device, the EL element has a configuration in which an organic functional layer including a light emitting layer is sandwiched between an anode and a cathode, and holes injected from the anode side and electrons injected from the cathode side are light emitting layers. Recombine in the light and emits light when it leaves the excited state.

As for the EL device, a technique for improving the chromaticity of light by resonating a specific wavelength of the emitted light has been proposed (see Patent Document 1).
JP 2001-71558 A

  In Patent Document 1, a dielectric multilayer film as a resonator is formed on a translucent substrate, and a light emitting element is formed on the multilayer film, whereby the color of light emitted to the translucent substrate substrate side. However, there is no description of the relationship between the thin film transistor and the optical resonator with respect to the active matrix light-emitting device. That is, in a light emitting device in which a light emitting element is formed on a light-transmitting substrate on which a thin film transistor is formed, if the thin film transistor, the light emitting element, and the optical resonator are separately formed, it takes time and the light emitting device becomes large. There is a problem.

  In view of the above problems, an object of the present invention is to provide a light emitting device capable of efficiently forming a thin film transistor, a light emitting element, and an optical resonator on a substrate, and an electronic device using the light emitting device. It is in.

  In order to solve the above problems, in the present invention, a thin film transistor, a first interlayer insulating film formed on the upper side of the thin film transistor including the gate insulating film of the thin film transistor, and the first interlayer insulating film are formed. A source / drain electrode electrically connected to the thin film transistor through a first contact hole, a second interlayer insulating film, and the source through a second contact hole formed in the second interlayer insulating film In the light-emitting device in which a light-transmitting pixel electrode electrically connected to the drain electrode, a light-emitting functional layer, and a counter electrode are formed in this order from the substrate side to the upper layer, the thin film transistor and the source / drain electrode Is formed at a position shifted from a region overlapping the light emitting functional layer in a plan view, and the first interlayer insulating film and the second interlayer insulating film Each of the regions that planarly overlap the thin film transistor and the source / drain electrodes and the region that planarly overlaps the light emitting functional layer has the same layer structure, and the first interlayer insulating film and the first Each of the two interlayer insulating films includes a dielectric multilayer film in which a plurality of refractive index layers constituting an optical resonator are stacked.

In the present invention, since the optical resonator composed of the dielectric multilayer film is configured for the self-luminous element composed of the pixel electrode, the light emitting functional layer, and the counter electrode, the chromaticity of the colored light can be improved. Further, the dielectric multilayer film constituting the optical resonator is formed using the first interlayer insulating film and the second interlayer insulating film, and it is not necessary to add an optical resonator separately. Therefore, the thin film transistor, the light emitting element, and the optical resonator can be efficiently incorporated into the device. Further, since the thin film transistor and the source / drain electrode are formed in a region shifted from the region overlapping the light emitting functional layer in a plane, the optical resonator can be formed in the entire region overlapping the light emitting functional layer in a plane. it can. Therefore, when a bottom emission type light emitting device is configured by forming a counter electrode with a light reflective electrode, a top emission type light emitting device is provided by providing a reflective layer on the side opposite to the light emitting functional layer with respect to the optical resonator. In any case, the light with high chromaticity can be emitted.

  In the present invention, the first interlayer insulating film includes an organic planarizing film for planarizing unevenness formed by the thin film transistor, and the dielectric multilayer film is provided on the organic planarizing film. Can be adopted. If comprised in this way, since the object at the time of forming the 1st and 2nd contact hole by an etching is a dielectric multilayer film, an etching apparatus and etching conditions can be made shared.

  In the present invention, the first interlayer insulating film can employ a configuration in which the entirety is formed of the dielectric multilayer film. If comprised in this way, since the object at the time of forming the 1st and 2nd contact hole by an etching is a dielectric multilayer film, an etching apparatus and etching conditions can be made shared.

  In the present invention, when the entire first interlayer insulating film is composed of the dielectric multilayer film, and a base protective film is formed between the thin film transistor and the substrate, the base protective film is It is preferable to include a dielectric multilayer film constituting the resonator.

  In the present invention, each of the dielectric multilayer films includes, for example, a first refractive index layer and a second refractive index layer having a lower refractive index than the first refractive index layer. Can be adopted.

  In the present invention, the dielectric multilayer film may employ a configuration comprising a combination of the same refractive index layers in any part.

  In the present invention, it is preferable that the dielectric multilayer film includes a layer in which two layers of films constitute a single refractive index layer. In this case, a configuration in which an electrode layer is formed between the two layers can be employed. For example, in the first interlayer insulating film, when the lowermost gate insulating film and the uppermost layer of the base protective film integrally form a refractive index layer, the gate insulating film has the electrical characteristics of the thin film transistor. Even when the film thickness is set with priority given to the above, the optical characteristics can be corrected with the other layer.

  In the present invention, the refractive index of the first refractive index layer is equal to the refractive index of the pixel electrode at the emission center wavelength of the light emitting device, and the pixel electrode is formed of the dielectric multilayer film of the second interlayer insulating film. Among these, it is preferable that the refractive index layer for one layer is formed by being laminated on the upper layer of the second refractive index layer. That is, the pixel electrode can also be used as part of the dielectric multilayer film.

  In the present invention, in the optical resonator, the number of repetitions of the first refractive index layer and the second refractive index layer is 2.5 or more including the pixel electrode layer, and the first Preferably, the refractive index layers have the same optical path length, and the second refractive index layers have the same optical path length.

The light-emitting device according to the present invention is used as light-emitting means in electronic devices such as mobile phones, mobile computers, and direct-view display devices, and various light sources (light-emitting means) of electronic devices. In particular, when the light emitting device according to the present invention is used as a display device for an electronic device, the color range of the electronic device can be expanded.

  Hereinafter, an embodiment of an organic EL device according to the present invention, a manufacturing method thereof, and an electronic device will be described with reference to the drawings. In the following description, in each drawing to be referred to, the scale may be different for each layer or each member in order to make the size recognizable on the drawing.

[Embodiment 1]
(overall structure)
FIG. 1 is an equivalent circuit diagram showing an electrical configuration of an active matrix organic EL device (light emitting device). FIG. 2 is a plan view showing an example of the pixel configuration of the organic EL device.

  As shown in FIG. 1, in the organic EL device 1 of the present embodiment, a plurality of scanning lines 131, a plurality of signal lines 132 extending in a direction intersecting with the scanning lines 131, and the signal lines are formed on the substrate. A plurality of common power supply lines 133 that extend in parallel to 132 are respectively wired, and the pixels 100 are configured in a matrix at each intersection of the scanning lines 131 and the signal lines 132.

  A data line driver circuit 390 including a shift register, a level shifter, a video line, and an analog switch is provided for the signal line 132. On the other hand, a scanning line driving circuit 380 including a shift register and a level shifter is provided for the scanning line 131. Each pixel 100 holds a first TFT 80 to which a scanning signal is supplied to the gate electrode via the scanning line 131 and an image signal supplied from the signal line 132 via the first TFT 80. The storage capacitor 110, the second TFT 90 to which the image signal held by the storage capacitor 110 is supplied to the gate electrode, and the common power supply line when electrically connected to the common power supply line 133 via the second TFT 90 A pixel electrode (anode) 4 into which a drive current flows from 133 and a light emitting functional layer 12 sandwiched between the pixel electrode 11 and the counter electrode (cathode) 13 are provided. The pixel electrode 11, the counter electrode 7 and the light emitting function are provided. The layer 12 constitutes an organic EL element (self-emitting element) 10.

  In constructing such an organic EL device 1, the planar structure of each pixel 100 is such that the four sides of the pixel electrode 11 having a rectangular planar shape are a signal line 132, a common feed line 133, and a scanning line, as shown in FIG. 131 and other pixel electrode scanning lines (not shown). As the planar shape of the pixel 100, an arbitrary shape such as a circle or an oval is applied in addition to the rectangle shown in the figure. In addition, the electrical connection between the pixel electrode 11 and the second TFT 90 is performed through the source / drain electrode 42 as described later, and the electrical connection between the electrodes is performed as described later. This is performed through contact holes 501, 502, and 601 formed in the interlayer insulating film.

  Here, the pixel 100 is used as a sub-pixel that forms one dot with three colors of red (R), green (G), and blue (B), and the corresponding color of such a pixel 100 is , And is defined by the material constituting the light emitting layer 122.

  Under such a configuration, when the scanning line 131 is driven and the first TFT 80 is turned on, the potential of the signal line 132 at that time is held in the holding capacitor 110, and depending on the state of the holding capacitor 110, The conduction state of the second TFT 90 is determined. Then, a current flows from the common power supply line 133 to the pixel electrode 11 through the channel of the second TFT 90, and further a current flows to the counter electrode 7 through the light emitting functional layer 12.

(Pixel configuration)
FIG. 3 is a cross-sectional view showing a pixel configuration of the organic EL device according to Embodiment 1 of the present invention. In FIG. 3, the organic EL device 1 shown here is a so-called “bottom emission type” organic EL device that emits light emitted from the organic EL element 10 from the side of the translucent substrate 2. In this embodiment, in any pixel 100, the base protective film 3 is formed on the surface side of the translucent substrate 2 such as a glass substrate, and the second TFT 90 is formed on the base protective film 3. Has been. A first interlayer insulating film 5 including a gate insulating film 51 is formed on the upper layer side of the second TFT 90. A pair of source / drain electrodes 41, 42 are formed on the upper layer of the first interlayer insulating film 5, and these source / drain electrodes 41, 42 are formed of two layers formed on the first interlayer insulating film 5. It is electrically connected to the source / drain region of the second TFT 9 via the first contact holes 501 and 502. Here, of the source / drain electrodes 41, 42, the source / drain electrode 41 extends as a common power supply line 133.

  In this embodiment, the second interlayer insulating film 6 is formed on the surface side of the source / drain electrodes 41 and 42. A pixel electrode 11 (anode) made of an ITO (indium tin oxide) film is formed on the second interlayer insulating film 6, and the pixel electrode 11 is a contact hole formed in the second interlayer insulating film 6. It is electrically connected to the source / drain electrode 42 via 601.

  A light emitting functional layer 12 including a hole transport layer 121 and a light emitting layer 122 of the organic EL element 10 is formed on the upper layer of the pixel electrode 11, and aluminum (Al) or magnesium (Mg) is formed on the upper layer of the light emitting functional layer 12. A counter electrode 13 (cathode) having reflectivity such as gold (Au) or silver (Ag) is formed. In each pixel 100, a protective layer 15 made of a silicon nitride film or the like is formed on the pixel electrode 11. However, the protective layer 15 is removed in a region overlapping the light emitting layer 122 in a planar manner, and the pixel electrode 11 and the hole transport layer 121 can be in direct contact. A partition wall 9 made of an acrylic resin or the like is formed so as to surround a region where the light emitting functional layer 12 is formed.

  In the pixel 110 configured as described above, when a current flows from the pixel electrode 11 to the counter electrode 13 through the light emitting functional layer 12, the light emitting layer 122 emits light according to the amount of current flowing therethrough, and the light is transmitted through the translucent substrate. 2 is emitted from the side. At that time, the light traveling from the light emitting layer 122 toward the counter electrode 13 is reflected from the counter electrode 13 and then emitted from the translucent substrate 2 side. Here, each pixel 100 corresponds to three colors of red (R), green (G), and blue (B) depending on the material constituting the light emitting layer 122, and emits predetermined color light. A color image is displayed. Therefore, the second TFT 90, the source / drain electrodes 41 and 42, and the like are shifted in plane with respect to the light emitting functional layer 12 (the hole transport layer 121 and the light emitting layer 122) so as not to prevent light emission. Formed in the region.

(Configuration of interlayer insulating film and optical resonator)
In this embodiment, the first interlayer insulating film 5 and the second interlayer insulating film 6 are planarly overlapped with the region where the second TFT 90 and the source / drain electrodes 41 and 42 are planarly overlapped and the light emitting functional layer 12. The region has the same layer structure. Here, the first interlayer insulating film 5 includes a gate insulating film 51 and an organic planarizing film 52 made of a photosensitive resin having a thickness of about 1 μm covering the gate electrode 93, and an organic planarizing film. On the upper layer of 52, a dielectric multilayer film 55 is formed. The organic planarization film 52 has a function of planarizing the unevenness formed by the TFT 90. The entire second interlayer insulating film 6 is composed of a dielectric multilayer film. In this embodiment, the dielectric multilayer film 55, the second interlayer insulating film 6, the pixel electrode 11, the light emitting functional layer 12, the counter electrode 13 constitutes an optical resonator 8.

The dielectric multilayer film 55 of the first interlayer insulating film 5 and the dielectric multilayer film constituting the second interlayer insulating film 6 are both, for example, a plurality of silicon nitride films 81 (first refractive index layer). And a plurality of layers of silicon oxide films 82 (second refractive index layers) having a refractive index lower than that of the silicon nitride film 81 are alternately stacked. In the optical resonator 8 of this embodiment, the number of repetitions of the silicon nitride film 81 and the silicon oxide film 82 is 2.0 or more, the silicon nitride films 81 have the same optical path length, and the silicon oxide films 82 have an optical path. The lengths are set equal. Further, the silicon nitride film 81 has a thickness of 20 μm to 200 μm, the silicon oxide film 82 has a thickness of 20 μm to 400 μm, and the optical length of each layer is ¼ times the emission center wavelength λc. Is set.

  In the optical resonator 8 of the present embodiment, the dielectric multilayer film 55 of the first interlayer insulating film 5 and the dielectric multilayer film constituting the second interlayer insulating film 6 are between the pixels 100 facing each color. Although common, the hole transport layer 121 and the light-emitting layer 122 can have different refractive indices and thicknesses of the corresponding colors. Therefore, if the optical lengths of the hole transport layer 121 and the light emitting layer 122 are optimized for each pixel 100 corresponding to each color, an optical resonator having an optical length corresponding to the wavelength of light emitted from each pixel 100. 8 can be configured. In addition to the configuration in which the optical length of the optical resonator 8 is optimized for all the pixels 100 corresponding to each color, the optical length of the optical resonator 8 is set only for the pixel 100 corresponding to a specific color. An optimized configuration may be employed.

(Effect of this embodiment)
As described above, in this embodiment, since the optical resonator 8 is configured in all the pixels 100, the chromaticity of colored light can be improved. The dielectric multilayer film constituting the optical resonator 8 is formed on the first interlayer insulating film 5 and the second interlayer insulating film 6, and it is not necessary to add the optical resonator 8 separately. The organic EL element and the optical resonator 8 can be efficiently formed on the translucent substrate 2.

  Further, since the TFT 90 and the source / drain electrodes 41 and 42 are formed in a region shifted from the region overlapping the light emitting functional layer 12 in a plane, the optical resonator 8 is arranged in a region overlapping the light emitting functional layer 12 in a plane. It can be formed entirely. Therefore, light with high chromaticity can be emitted with a sufficient amount of light.

  Furthermore, as will be described below, in this embodiment, when the contact holes 501, 502, and 601 are formed by etching, the dielectric multilayer film of the first interlayer insulating film 5 is the object to be etched. 55, or a second interlayer insulating film made of a dielectric multilayer film. Therefore, the etching apparatus and etching conditions can be shared.

(Production method)
FIG. 4 is a process cross-sectional view illustrating a part of the manufacturing process of the organic EL device according to Embodiment 1 of the present invention. In order to manufacture the organic EL device of this embodiment, first, as shown in FIG. 4A, after forming a base protective film 3 made of a silicon oxide film or a silicon nitride film by sputtering or the like, a well-known semiconductor process is performed. The TFT 90 is formed using the above.

  Next, in the formation process of the first interlayer insulating film 5, first, after applying a photosensitive resin, exposure and development are performed to form an organic planarizing film 52 having a thickness of about 1 μm. At that time, holes 521 and 522 corresponding to the first contact holes 501 and 502 are formed. Next, the dielectric multilayer film 55 is formed by alternately forming the silicon nitride film 81 and the plurality of silicon oxide films 82 by sputtering. In this way, the first interlayer insulating film 5 including the gate insulating film 51, the planarizing film 52, and the dielectric multilayer film 55 is formed.

Next, as shown in FIG. 4B, the dielectric multilayer film 55 is etched using photolithography technology to form holes 551 and 552 connected to the holes 521 and 522 of the organic planarization film 52. As a result, a hole is also formed in the gate insulating film 51, and the contact holes 501 and 502 are completed.

  Next, as shown in FIG. 4C, a film forming process and an etching process are performed to form source / drain electrodes 41 and 42.

  Next, in the step of forming the second interlayer insulating film 6, the silicon nitride film 81 and the silicon oxide film 82 are alternately formed to form the second interlayer insulating film 6.

  Next, as shown in FIG. 4D, the second interlayer insulating film 6 is etched using a photolithography technique to form a second contact hole 601 connected to the source / drain electrode 42.

  Thereafter, an ITO film is formed by sputtering and then patterned to form the pixel electrode 11 as shown in FIG. Subsequent steps can use well-known steps, and thus detailed description will be omitted. However, after forming the protective layer 15 and the barrier rib 9, the hole transport layer 121 and the light emitting layer are formed using a droplet discharge method or the like. 122 are formed sequentially. At that time, examples of the hole transport layer 121 include polythiophene, polystyrene sulfonic acid, polypyrrole, polyaniline, and derivatives thereof as polymer materials. In the case of using a low molecular weight material, it is preferable that the hole injection layer and the hole transport layer 121 are stacked. For the light-emitting layer 122, a polyfluorene derivative, a polyphenylene derivative, a polyvinyl carbazole, a polythiophene derivative, or a polymer material thereof, a perylene dye, a coumarin dye, a rhodamine dye, for example, rubrene, perylene, 9,10- A material doped with diphenylanthracene, tetraphenylbutadiene, Nile red, coumarin 6, quinacridone, or the like can be used. At that time, a material for forming a light emitting layer that emits red colored light, a material for forming a light emitting layer that emits green colored light, and a material for forming a light emitting layer that emits blue colored light are respectively discharged to the corresponding pixels 100. Then, a predetermined light emitting layer 122 is formed by coating. Next, after forming an aluminum film or the like by sputtering, patterning is performed to form the counter electrode 13.

  As described above, in this embodiment, when the contact holes 501, 502, and 601 are formed by etching, the object to be etched is the dielectric multilayer film 55 of the first interlayer insulating film 5 or the dielectric multilayer film. This is a second interlayer insulating film made of a film. Therefore, the etching apparatus and etching conditions can be shared.

[Embodiment 2]
FIG. 5 is a cross-sectional view showing a pixel configuration of an organic EL device according to Embodiment 2 of the present invention. Since the basic configuration of this embodiment is the same as that of Embodiment 1, common portions are denoted by the same reference numerals and description thereof is omitted.

In FIG. 5, the organic EL device 1 of this embodiment is also a so-called “bottom emission type” organic EL device. Also in this embodiment, as in the first embodiment, in any pixel 100, the base protective film 3 is formed on the surface side of the translucent substrate 2 such as a glass substrate. A second TFT 90 is formed. A first interlayer insulating film 5 including a gate insulating film 51 is formed on the upper layer side of the second TFT 90. A pair of source / drain electrodes 41, 42 are formed on the upper layer of the first interlayer insulating film 5, and these source / drain electrodes 41, 42 are formed of two layers formed on the first interlayer insulating film 5. It is electrically connected to the source / drain region of the second TFT 9 via the first contact holes 501 and 502. Here, of the source / drain electrodes 41, 42, the source / drain electrode 41 extends as a common power supply line 133. In this embodiment, the second inter-layer insulating film 6 is formed on the surface side of the source / drain electrodes 41 and 42. A pixel electrode 11 (anode) made of an ITO (indium tin oxide) film is formed on the second interlayer insulating film 6, and the pixel electrode 11 is a contact hole formed in the second interlayer insulating film 6. It is electrically connected to the source / drain electrode 42 via 601. A light emitting functional layer 12 including a hole transport layer 121 and a light emitting layer 122 of an organic EL element (self light emitting element) is formed on the upper layer of the pixel electrode 11, and the upper layer of the light emitting functional layer 12 has reflectivity. The counter electrode 13 (cathode) is formed. In each pixel 100, a protective layer 15 made of a silicon nitride film or the like is formed on the pixel electrode 11. The protective layer 15 is removed in a region overlapping the light emitting layer 122 in a plan view, and the pixel electrode 11 and the hole transport layer 121 can be in direct contact. A partition wall 9 made of an acrylic resin or the like is formed so as to surround a region where the light emitting functional layer 12 is formed.

  In this embodiment, the entire base protective film 3 is composed of a dielectric multilayer film. The first interlayer insulating film 5 including the gate insulating film 51 is entirely composed of a dielectric multilayer film. Here, the uppermost silicon oxide film 82 of the base protective film 3 and the silicon oxide film 82 constituting the gate insulating film 51 are integrated to form a refractive index layer for one layer.

  Also in this embodiment, the second interlayer insulating film 6 is entirely composed of a dielectric multilayer film as in the first embodiment. In this embodiment, the base protective film 3 and the first interlayer insulating film 5 are formed. The second interlayer insulating film 6, the pixel electrode 11, the light emitting functional layer 12, and the counter electrode 13 constitute an optical resonator 8. Here, the dielectric multilayer film constituting the base protective film 3, the first interlayer insulating film 5, and the second interlayer insulation is, for example, a plurality of silicon nitride films 81 (first refractive index layer), A plurality of silicon oxide films 82 (second refractive index layers) having a refractive index lower than that of the silicon nitride film 81 are alternately stacked. In the optical resonator 8, the number of repetitions of the silicon nitride film 81 and the silicon oxide film 82 is 2.0 or more, the optical path lengths of the silicon nitride films 81 are equal, and the optical path lengths of the silicon oxide films 82 are equal. Is set. The pixel electrode 11 is made of an ITO film, and the refractive index of the ITO film and the refractive index of the silicon nitride film are substantially equal. Therefore, the optical path length of the ITO film is substantially equal to that of the silicon nitride film, and the repetition number of the low refractive index layer and the high refractive index layer including the ITO film is 2.5 or more. Further, the film thicknesses of the silicon nitride film 81 and the silicon oxide film 82 are set so that the optical length of each layer is 1/4 times the emission center wavelength λc.

  Also in the optical resonator 8 of this embodiment, the dielectric multilayer film 55 and the dielectric multilayer film constituting the second interlayer insulating film 6 are common between the pixels 100 facing each color, but hole transport is performed. The layer 121 and the light emitting layer 122 can have different refractive indexes and thicknesses of materials for each corresponding color. Therefore, if the optical lengths of the hole transport layer 121 and the light emitting layer 122 are optimized for each pixel 100 corresponding to each color, an optical resonator having an optical length corresponding to the wavelength of light emitted from each pixel 100. 8 can be configured. In addition to the configuration in which the optical length of the optical resonator 8 is optimized for all the pixels 100 corresponding to each color, the optical length of the optical resonator 8 is set only for the pixel 100 corresponding to a specific color. An optimized configuration may be employed.

  As described above, in this embodiment, since the optical resonator 8 is configured in all the pixels 100, the chromaticity of colored light can be improved. The dielectric multilayer film constituting the optical resonator 8 constitutes the first base protective film 3, the first interlayer insulating film 5, and the second interlayer insulating film 6, and the optical resonator 8 is separately provided. Since there is no need to add, the TFT 90, the organic EL element, and the optical resonator 8 can be efficiently formed on the translucent substrate 2. Further, since the TFT 90 and the source / drain electrodes 41 and 42 are formed in a region shifted from the region overlapping the light emitting functional layer 12 in a plane, the optical resonator 8 is arranged in a region overlapping the light emitting functional layer 12 in a plane. It can be formed entirely. Therefore, light with high chromaticity can be emitted with a sufficient amount of light.

Further, although the description of the manufacturing method is omitted, when the contact holes 501, 502, and 601 are formed by etching, the etching targets are the first interlayer insulating film 5 made of a dielectric multilayer film, and the dielectric. This is a second interlayer insulating film 6 made of a multi-layer film. Therefore, the etching apparatus and etching conditions can be shared.

  In this embodiment, the uppermost silicon oxide film 82 of the base protective film 3 and the silicon oxide film 82 constituting the gate insulating film 51 are formed with a gate electrode 93 or the like between them. This constitutes one refractive layer. Therefore, the thickness of the gate insulating film 51 can be set based on the electrical characteristics of the TFT 90. Even in this case, the optical characteristics can be corrected by the uppermost silicon oxide film 82 of the base protective film 3. it can.

[Other embodiments]
In the above embodiment, since the bottom emission type emits light from the translucent substrate 2 side, the optical length of the silicon nitride film 81 and the silicon oxide film 82 constituting the optical resonator 8 is 1 / of the emission center wavelength λc. However, if the optical lengths of the silicon nitride film 81 and the silicon oxide film 82 constituting the optical resonator are set to be ½ times the emission center wavelength λc, the light emitting layer is set. It is possible to apply to a top emission type in which light is emitted from the side opposite to the translucent substrate 2 with respect to 122. In this case, a light transmissive electrode is used as the counter electrode 13, and a reflective layer may be provided on the side opposite to the light emitting layer 122 with respect to the optical resonator 8.

[Electronics]
Next, an example of an electronic apparatus including the above-described organic EL device will be described. FIG. 6 is a perspective view showing a configuration of a mobile personal computer (information processing apparatus) including the display device according to the above-described embodiment. In the figure, a personal computer 1100 is composed of a main body 1104 provided with a keyboard 1102 and a display device unit provided with the organic EL device described above as a display device 1106. For this reason, the electronic device provided with the display part with a wide color specification range can be provided.

  In addition to the above-described examples, other examples include mobile phones, wristwatch-type electronic devices, liquid crystal televisions, viewfinder-type and monitor direct-view video tape recorders, car navigation devices, pagers, electronic notebooks, calculators, word processors, Examples include workstations, videophones, POS terminals, electronic paper, and devices equipped with touch panels. The electro-optical device of the present invention can also be applied as a display unit of such an electronic apparatus.

[Other embodiments]
The preferred embodiments of the organic EL device, the manufacturing method thereof, and the electronic apparatus according to the present invention have been described above with reference to the accompanying drawings. Needless to say, the present invention is not limited to the above embodiment. Various shapes, combinations, and the like of the constituent members shown in the above-described embodiments are examples, and various modifications can be made based on design requirements and the like without departing from the gist of the present invention.

It is an equivalent circuit diagram showing an electrical configuration of an active matrix type organic EL device (light emitting device). It is a top view which shows an example of the pixel structure of the organic electroluminescent apparatus shown in FIG. It is sectional drawing which shows the pixel structure of the organic EL apparatus which concerns on Embodiment 1 of this invention. It is process sectional drawing which shows a part of manufacturing process of the organic EL apparatus concerning Embodiment 1 of this invention. It is sectional drawing which shows the pixel structure of the organic electroluminescent apparatus which concerns on Embodiment 2 of this invention. It is a figure which shows an example of the electronic device provided with the organic EL apparatus of this embodiment.

Explanation of symbols

1 .... Organic EL device (light emitting device) 2 .... Transparent substrate 3 .... Underlying protective film 5 .... First interlayer insulating film 6 .... Second interlayer insulating film 8 .... Optical resonator , 9 .. Partition, 10 .. Organic EL element, 11... Pixel electrode (translucent electrode / anode), 12 Light emitting functional layer, 13 .. Counter electrode (cathode), 42. ..Gate insulating film 52 ..Organic planarizing film 55 ..Dielectric multilayer film 81 ..Silicon nitride film (first refractive index layer) 82 ..Silicon oxide film (second refractive index layer) ), 90... Second TFT (thin film transistor), 93.. Gate electrode, 100... Pixel, 121... Hole transport layer, 122 .. Light emitting layer, 502 .. First contact hole, 601.・ Second contact hole

Claims (7)

The thin film transistor is electrically connected to the thin film transistor via the first interlayer insulating film formed on the upper side of the thin film transistor including the gate insulating film of the thin film transistor and the first contact hole formed in the first interlayer insulating film. Connected source / drain electrodes, a second interlayer insulating film, and a translucent electrode electrically connected to the source / drain electrodes through a second contact hole formed in the second interlayer insulating film In the light emitting device in which the pixel electrode, the light emitting functional layer, and the counter electrode are formed in this order from the substrate side to the upper layer,
The thin film transistor and the source / drain electrode are formed at positions shifted from a region overlapping the light emitting functional layer in a plane,
The first interlayer insulating film and the second interlayer insulating film are the same in any of the region overlapping the thin film transistor and the source / drain electrode in a plane and the region overlapping the light emitting functional layer in a plane. With a layer structure of
Each of the first interlayer insulating film and the second interlayer insulating film includes a dielectric multilayer film in which a plurality of refractive index layers constituting an optical resonator are stacked.   The first interlayer insulating film includes an organic planarization film that planarizes unevenness formed by the thin film transistor, and the dielectric multilayer film is provided on an upper layer of the organic planarization film. Item 4. The light emitting device according to Item 1.   2. The light emitting device according to claim 1, wherein the first interlayer insulating film is entirely composed of the dielectric multilayer film. A base protective film is formed between the thin film transistor and the substrate,
The light-emitting device according to claim 3, wherein the base protective film includes the dielectric multilayer film.   5. The light emitting device according to claim 1, wherein the dielectric multilayer film includes a combination of the same refractive index layers at any portion.   6. The dielectric multilayer film according to claim 1, wherein the dielectric multilayer film includes a layer in which two layers of films constitute a single refractive index layer. Light emitting device. An electronic apparatus, comprising a light emitting means emitting device according to any one of claims 1 to 6.

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