JP4638949B2 - 半導体発光装置およびその製造方法 - Google Patents
半導体発光装置およびその製造方法 Download PDFInfo
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- JP4638949B2 JP4638949B2 JP2009101520A JP2009101520A JP4638949B2 JP 4638949 B2 JP4638949 B2 JP 4638949B2 JP 2009101520 A JP2009101520 A JP 2009101520A JP 2009101520 A JP2009101520 A JP 2009101520A JP 4638949 B2 JP4638949 B2 JP 4638949B2
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- Prior art keywords
- light emitting
- semiconductor light
- lead frame
- emitting element
- emitting device
- Prior art date
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- 239000004065 semiconductor Substances 0.000 title claims description 60
- 238000004519 manufacturing process Methods 0.000 title claims description 11
- 229920005989 resin Polymers 0.000 claims description 69
- 239000011347 resin Substances 0.000 claims description 69
- 230000003287 optical effect Effects 0.000 claims description 11
- 238000000034 method Methods 0.000 claims description 8
- 238000000465 moulding Methods 0.000 claims description 5
- 239000012530 fluid Substances 0.000 claims description 3
- 239000002184 metal Substances 0.000 description 9
- 229910052751 metal Inorganic materials 0.000 description 9
- 238000012986 modification Methods 0.000 description 5
- 230000004048 modification Effects 0.000 description 5
- 239000000463 material Substances 0.000 description 3
- 230000005855 radiation Effects 0.000 description 3
- 238000001721 transfer moulding Methods 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 230000017525 heat dissipation Effects 0.000 description 2
- 238000001746 injection moulding Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 239000004956 Amodel Substances 0.000 description 1
- 229910000881 Cu alloy Inorganic materials 0.000 description 1
- 229920000106 Liquid crystal polymer Polymers 0.000 description 1
- 239000004977 Liquid-crystal polymers (LCPs) Substances 0.000 description 1
- 239000004677 Nylon Substances 0.000 description 1
- 239000004734 Polyphenylene sulfide Substances 0.000 description 1
- 239000004954 Polyphthalamide Substances 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000005265 energy consumption Methods 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 239000000945 filler Substances 0.000 description 1
- 239000004519 grease Substances 0.000 description 1
- 239000004570 mortar (masonry) Substances 0.000 description 1
- 229920001778 nylon Polymers 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 229920000069 polyphenylene sulfide Polymers 0.000 description 1
- 229920006375 polyphtalamide Polymers 0.000 description 1
- 229920003002 synthetic resin Polymers 0.000 description 1
- 239000000057 synthetic resin Substances 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/12—Passive devices, e.g. 2 terminal devices
- H01L2924/1204—Optical Diode
- H01L2924/12041—LED
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/301—Electrical effects
- H01L2924/3025—Electromagnetic shielding
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- Led Device Packages (AREA)
Description
Claims (2)
- 半導体発光素子と、
前記半導体発光素子が搭載された第1リードフレームと、
前記半導体発光素子と電気的に接続された第2リードフレームと、
前記半導体発光素子上で凸レンズ部分を形成する透光性樹脂部と、
前記凸レンズ部分に接触しないようにその周囲を取り囲む遮光性樹脂部とを備え、
前記半導体発光素子が前記凸レンズ部分の光軸上に位置するように前記第1及び前記第2リードフレームはそれぞれ上面図における前記半導体発光素子の両側の2箇所が前記遮光性樹脂部を貫通することによって保持され、
少なくとも前記第1リードフレーム上に設けられ前記半導体発光素子が搭載される部分は凹部を形成し、該凹部の内側に前記凸レンズ部が形成された半導体発光装置。 - 第1及び第2リードフレームを準備する工程と、
前記第1リードフレームに半導体発光素子を搭載する工程と、
インサート成型により、前記第1と第2リードフレームを保持し、少なくとも前記第1リードフレーム上に設けられた凹部の内側に凸レンズ部分を形成する透光性樹脂部を形成する工程と、
前記凸レンズ部分の周囲に金型を設け、該金型に流動性樹脂を流し込むことにより、前記凸レンズ部分の周囲を取り囲む遮光性樹脂部を、前記半導体発光素子が前記凸レンズ部分の光軸上に位置するように前記第1及び前記第2リードフレームのそれぞれの上面図における前記半導体発光素子の両側の2箇所を貫通することによって保持し、かつ前記凸レンズ部分が前記流動性樹脂の熱により損傷することを防ぐために前記凸レンズ部分に接触しないように形成する工程とを備えた半導体発光装置の製造方法。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2009101520A JP4638949B2 (ja) | 2009-04-20 | 2009-04-20 | 半導体発光装置およびその製造方法 |
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Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2009101520A JP4638949B2 (ja) | 2009-04-20 | 2009-04-20 | 半導体発光装置およびその製造方法 |
Related Parent Applications (1)
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---|---|---|---|
JP2004131774A Division JP2005317661A (ja) | 2004-04-27 | 2004-04-27 | 半導体発光装置およびその製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2009164639A JP2009164639A (ja) | 2009-07-23 |
JP4638949B2 true JP4638949B2 (ja) | 2011-02-23 |
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JP2009101520A Expired - Fee Related JP4638949B2 (ja) | 2009-04-20 | 2009-04-20 | 半導体発光装置およびその製造方法 |
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Families Citing this family (3)
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KR102385941B1 (ko) * | 2015-06-15 | 2022-04-13 | 쑤저우 레킨 세미컨덕터 컴퍼니 리미티드 | 발광 소자 패키지 |
KR102667722B1 (ko) * | 2017-12-06 | 2024-05-22 | 서울바이오시스 주식회사 | 광 조사 장치 |
DE102022116832A1 (de) * | 2022-07-06 | 2024-01-11 | Ams-Osram International Gmbh | Optoelektronisches bauelement und verfahren zum herstellen eines optoelektronischen bauelements |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2001185763A (ja) * | 1999-12-27 | 2001-07-06 | Toshiba Electronic Engineering Corp | 光半導体パッケージ |
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Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
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JP2001185763A (ja) * | 1999-12-27 | 2001-07-06 | Toshiba Electronic Engineering Corp | 光半導体パッケージ |
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JP2009164639A (ja) | 2009-07-23 |
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