JP4621161B2 - Semiconductor device - Google Patents

Description

  The present invention relates to a semiconductor device in which a plurality of functional elements are formed on a substrate.

  Conventionally, a thin film transistor using an amorphous silicon thin film as a functional element is a display device such as a liquid crystal display panel or an organic EL panel as a switching element, and a PIN type using an amorphous silicon thin film similar to a TFT element. It is widely used for photosensor panels combined with photodiodes or photoelectric conversion elements (hereinafter referred to as photosensor elements) such as MIS photocapacitors and TFT photosensors.

  Recently, the application of optical sensor panels to the medical field has been studied. In particular, radiation imaging where radiation is converted into visible light by phosphors and the optical information is read indirectly by the optical sensor panel. Development of an apparatus and a direct radiation imaging apparatus using a TFT element and amorphous selenium or the like for directly converting radiation into an electrical signal are also under development.

  Here, FIG. 15 shows an equivalent circuit of an optical sensor panel composed of a TFT element and a PIN photodiode, and FIG. 16 shows a schematic diagram of the cross section thereof. In FIG. 15, reference numeral 1010 denotes a PIN type optical sensor, 1020 denotes a TFT, 1030 denotes a signal wiring, 1040 denotes a TFT driving wiring, and 1050 denotes a bias wiring of the PIN type optical sensor.

In FIG. 16, 2010 is a glass substrate, 2020 is a gate wiring, 2030 is a gate insulating film, 2040 is an i-type a-Si layer, 2050 is a SiN layer, 2060 is an n ⁺ ohmic contact layer, and 2070 is a source / drain electrode. , 2080 is a sensor lower electrode, 2100, 2110 and 2120 are P, I and N type a-Si layers, 2090 is a sensor upper electrode, and 2130 is a SiN protective film.

  The incident light as the image information is photoelectrically converted by the PIN type optical sensor 1010 and simultaneously accumulated in the sensor capacitor C1. After that, when the TFT 1020 is turned on, the charge is distributed to the capacitor C2 formed by the cross portion of the signal line 1030 and the TFT drive wiring 1040, and the change in potential of the signal line 1030 is used as a read output.

  At present, the above-mentioned optical sensor panel is required to increase the substrate size and improve the process accuracy due to the demand for larger area and higher definition. Considering the time required for this, it may not be the best method.

  In view of this, a semiconductor device having a structure in which the area is increased by pasting together a plurality of panels has been proposed as a method for achieving a large area panel using conventional equipment and devices for small substrates.

  As a specific example, FIG. 17 shows a perspective view of a radiation image reading apparatus in which four photosensor panels are bonded to increase the area. FIG. 18 shows a schematic cross-sectional view thereof. In FIG. 17, reference numeral 3010 denotes an optical sensor panel, 3020 denotes a base, 3050 denotes a fluorescent plate for converting radiation into visible light, 3060 denotes a flexible substrate, and 3400 denotes a chassis portion.

  In FIG. 18, reference numeral 3010 denotes an optical sensor panel, and 3020 denotes a base made of radiation absorbing lead for fixing the four optical sensor panels 3010 at a fixed position and protecting an electrical mounting portion disposed on the lower surface. , 3030 is a first adhesive layer for attaching the sensor panel 3010 and the base 3020, 3050 is a fluorescent plate for converting radiation into visible light, and 3040 is a second adhesive layer for attaching the fluorescent plate 3050 to the sensor panel 3010. 3070 are printed circuit boards for driving the sensor panel 3010, and 3060 is a flexible circuit board for connecting the printed circuit board 3070 and the sensor panel 3010.

  Reference numeral 3200 denotes a housing, 3210 denotes a lid, 3230 denotes a cover made of lead or the like for protecting the electric mounting portion, 3240 denotes a foot for fixing the printed circuit board 3070, and 3250 denotes the base 3020. This is an angle for fixing to 3200. Here, the chassis portion 3400 is formed by the members 3200 and 3250. A sensor unit is formed by fixing the radiation sensor unit 3300 in the chassis unit 3400.

  However, as described above, when a plurality of panels are bonded together, the accuracy of the joints between the panels and the clearance are particularly problematic.

  FIG. 19 is a plan view schematically showing the bonded panel. In FIG. 20, the figure which expanded the center part of the joint part of a panel is shown. P is the pixel pitch, and Pc is the distance from the pixel center to the pixel center between adjacent panels. Usually, Pc <2P, that is, the clearance between pixels is set within one pixel, so that correction by image processing can be appropriately performed. In other words, each optical sensor panel needs to be cut at a position of several tens of μm from the pixel end.

  In order to solve such a problem, there are the following problems, which may affect the manufacturing yield and even the characteristic problems.

  1. When the optical sensor panel is cut, the pixel portion may be affected by chipping, misalignment, etc., and this reliability remains a problem after assembly. FIG. 21 shows a schematic plan view of the cutting portion. In the figure, reference numeral 4010 denotes a pixel portion, 4020 denotes a protective film such as a SiN film, 4030 denotes chipping and the like, and 4040 denotes a cut end face. As is clear from this, the chipping 4030 destroys the protective film 4020. As a result, there is no problem in the initial characteristics, but fluctuations in output have been confirmed by storage at high temperature and high humidity.

  2. Pixel destruction occurs due to static electricity during panel assembly. Usually, an insulating material such as a glass substrate is easily charged by peeling charging at a vacuum chuck stage, friction charging by air blow, or the like. In a charged state, a discharge occurs and is destroyed only by approaching an object having a potential difference, specifically, a grounded case. In particular, the corner portion has a strong tendency to cause a decrease in yield.

  3. Due to handling at the time of assembling the panel, static electricity is accumulated by 2 to 3 kV, and one pixel may be destroyed at the cut surface, particularly at the corner.

  The present invention solves the above-described problem, and has a configuration that enables the manufacture of a large-area panel or a narrow frame panel with a minimized space around the panel, stably and at a high yield. An object of the present invention is to provide a semiconductor device.

  That is, a first object of the present invention is to provide a slice check wiring for determining whether cutting is good or not, and to arrange the panel at a position where reliability is ensured in order to cut and bond the bonded panel with high accuracy. The purpose is to electrically check the damage of the protective film due to chipping at the time of cutting and to ensure the reliability after assembly.

  A second object of the present invention is to suppress electrical crosstalk by fixing the slice check wiring to an electrical constant potential.

  Furthermore, a third object of the present invention is to electrically connect the slice check wiring to the TFT drive wiring or the bias wiring of the optical sensor to improve resistance to electrostatic breakdown and to connect the slice check wiring to a constant potential. It is to provide an antistatic function and to ensure the stability and reliability of the device.

For this reason, in the present invention, in a semiconductor device having a structure in which a large area is obtained by bonding a plurality of panels obtained by cutting a substrate having a plurality of functional elements, the quality of the cutting result of the panel is checked. Peripheral wiring is arranged along the periphery of the panel, and the peripheral wiring is connected to a circuit including drive wirings of the plurality of functional elements, and a reference voltage is applied when conducting a conductivity test. It is characterized by.

  In this case, as an embodiment of the present invention, the peripheral wiring is connected to at least the driving wiring or the signal wiring of the TFT, and one pixel of the TFT substrate is composed of the TFT element and the photoelectric conversion element. It is effective that the peripheral wiring is electrically connected to the bias wiring of the photoelectric conversion element.

  Hereinafter, the present invention will be described in more detail with reference to the drawings.

(First embodiment)
As a first embodiment of the present invention, a semiconductor device applied to a radiation image reading apparatus constituted by a TFT element and a MIS type photosensor will be described. Here, FIG. 1 shows an equivalent circuit of the present embodiment. In the figure, reference numeral 11 denotes a TFT driver, 12 denotes a signal processing amplifier, and 13 denotes a driver for driving the MIS type optical sensor. Also, C11 to C35 are MIS type optical sensors, T11 to T35 are TFTs, Vg1 to Vg3 are TFT drive wirings, Sig1 to Sig5 are signal wirings, and Vs1 and Vs2 are bias wirings.

  The MIS photosensors C11 to C35 receive optical signals applied to the bias wirings Vs1 and Vs2 from the driving driver 13, and the charges of the optical signals here are stored in the MIS photosensor. The accumulated charges are sequentially read out from the signal lines Sig1 to Sig5 by the TFTs (T11 to T35) via the signal processing amplifier. Further, the TFTs are sequentially turned on / off in response to a given signal from the TFT driver 11 via the TFT drive wirings Vg1 to Vg3. Further, Sc is a slice check wiring, and is supplied with a ground potential from the TFT driving driver and the MIS type photosensor driving driver.

  Here, an outline of a manufacturing process in this embodiment will be described in order. In addition, (a)-(e) of FIG. 2 shows typical sectional drawing of an optical sensor panel.

  (1) As shown in FIG. 2A, a Cr film having a thickness of 1000 mm is formed on a glass substrate 101 by sputtering, and the lower electrode 102 of the MIS photosensor, the TFT gate electrode 103, and The gate wiring 104, and further, the panel cutting slice line and the slice check wiring are patterned.

(2) Next, as shown in FIG. 2B, the silicon nitride film 105 (SiN) is 3000 Å thick and the amorphous silicon film 106a (Si) is 5000 Å thick by plasma CVD. A contact hole 108 for continuously forming the layer 107 (n ⁺ ) with a thickness of 1000 mm and joining the lower electrode of the MIS type optical sensor and the TFTS-D electrode, and a contact hole such as a wiring lead-out portion Etc. are opened by the CDE method.

  (3) Next, as shown in FIG. 2 (c), aluminum (Al) is formed to a thickness of 1 μm by sputtering, and the TFTS-D electrode 109, the signal line 110, and the bias wiring 111 of the optical sensor are It is formed by a wet etching method.

(4) Further, as shown in FIG. 2 (d), the ohmic layer (n ⁺ ) in the TFT gap portion is removed by the RIE method to form the TFT channel portion 112.

  (5) Further, as shown in FIG. 2 (e), element isolation is performed by RIE, and a silicon nitride film 113 (SiN) is formed as a protective film by plasma CVD to a thickness of 9000 mm. The lead wiring part pad part and the like are opened by the RIE method.

  From the above, a single panel is manufactured, and the non-defective product is determined by the inspection process, whereby the previous process is completed.

Thereafter, electrical mounting is performed on the optical sensor panel by an intermediate process. That is,
(6) Spin-coat polyimide and heat cure. Then, it cut | disconnects to predetermined size according to a slice line.

  (7) Conduct conductivity inspection by slice check wiring.

  (8) Conduct electrical mounting such as TAB connection and PCB connection, and then conduct conductivity inspection again.

The module before pasting is completed by the above, and it assembles as a large area panel by a post process after that. That is,
(9) A panel is bonded to the base, a fluorescent screen is bonded, and an Al sheet is further bonded.

  (10) Install in the housing and perform final inspection.

  Thus, a semiconductor device used for the radiation image reading apparatus is completed. After connecting the driver for driving, etc., the risk of electrostatic breakdown is reduced, so when the driver is finished mounting, the slice check wiring may be cut and removed, or if it does not cause a problem. May be left as is.

  FIG. 3 shows an enlarged central portion where the optical sensor panel is bonded. The pixel size in this embodiment is 160 μm. In the figure, the pixel center is the center of gravity of the optical sensor unit and is the optical pixel center. As a result, if the distance between the centers of adjacent panels is designed for two pixels, that is, within 320 μm, the actual cutting and bonding margin will increase. This can be achieved by sticking the center of gravity of the optical sensor portion by the arrangement of the TFTs and arranging them at the center side. In this embodiment, the distance between the pixel regions can be expanded from 160 μm to 188 μm and 202 μm.

  FIG. 4 shows a schematic pattern of the corner portion of the photosensor panel. In the figure, 41 is a slice line, 42 is a slice check wiring, 43 is a SiN protective film, and point a is a pixel center of gravity.

  In the examination here, the SiN protective film 43 is arranged at a position of 25 μm from the pixel end, and the slice check wiring 42 is arranged in the SiN protective film. This width is the minimum width that can ensure the characteristics by a reliability test such as high temperature and high humidity. In addition, the slice is cut so as to cut off the slice line. However, the slice line 41 is set at a position of 45 μm from the edge of the SiN protective film as a margin by chipping, slice deviation, or the like. The reason why the SiN protective film is not provided in this region is that the SiN protective film may break and grow up to the pixel.

  Next, a method of using the slice check line in this embodiment will be described. As described above, when the SiN protective film breaks due to an unexpected slice shift or chipping when the panel is cut, the slice check line is also broken at the same time. Therefore, by checking the conductivity with the pad Cp provided in the slice check wiring shown in FIG. 1, it is possible to confirm the abnormality and avoid confusion with the non-defective sensor panel.

  As a result, it is possible to perform a reliable and highly accurate inspection as compared with the determination conventionally performed by visual confirmation. Furthermore, as described above, by performing the check by the slice check wiring at a necessary place in the intermediate process and the subsequent process, it is possible to eliminate the occurrence of defects after bonding a plurality of optical sensor panels. It became possible.

  In particular, pixel destruction due to static electricity or the like can occur until a TFT driving driver, a photoelectric conversion element driving driver, or the like is electrically mounted.

  In this embodiment, a TFT is shown as an example of a functional element, but the present invention is not limited to this, and a diode or a thin film diode may be used as a matter of course.

(Second Embodiment)
In the first embodiment, the element driving circuit is provided on one side of the substrate. However, in this embodiment, a driving circuit is provided on both sides of the panel in order to perform high-speed driving. Here, a structure in which two panels are bonded together will be described. FIG. 5 is a schematic plan view of a bonding structure. In the figure, reference numerals 101 and 102 denote sensor panels. Reference numeral 103 denotes an amplifier side lead wiring portion connected to the amplifier IC, and reference numeral 104 denotes a driver side lead wiring portion connected to the driver IC. In the present embodiment, each sensor panel has a driver side lead-out wiring portion arranged on both sides of the panel to realize high-speed driving.

  Similar to the first embodiment, it is possible to provide a slice check wiring around the TFT substrate, cut the slice line, and then conduct a conductivity inspection to check for defective products. In addition, when a single panel is sufficient, a driver may be mounted on both sides of the single panel without performing any special bonding after cutting. Also, if you want to place the pixel area in the very vicinity of the chassis part, use the sensor panel alone and install the cutting part in the required direction, so that you can read the pixel from the vicinity of the chassis more Become. FIG. 6 is a plan view schematically showing it. Reference numeral 105 denotes a signal readout circuit, 106 denotes a sensor driving circuit, and 107 denotes a chassis. In the drawing, the end pixel portion A can be brought close to the chassis, and an image in the vicinity of the chassis portion can be read.

In this embodiment, a TFT is shown as an example of a functional element, but the present invention is not limited to this, and a diode or a thin film diode may be used as a matter of course.
(Third embodiment)
As a third embodiment of the present invention, a semiconductor device used for a radiographic image reading apparatus composed of a TFT element and a MIS photoelectric conversion element will be described. FIG. 7 shows an equivalent circuit in this embodiment. In the figure, 11 is a TFT driving driver, 12 is a signal processing amplifier, and 13 is a MIS photoelectric conversion element driving driver.

  In the present embodiment, the Vs1 and Vs2 wirings that are bias wirings of the optical sensor are connected to each other by a resistor Rvs. Further, the Vg1 to Vg3 wirings which are TFT driving wirings are connected to each other by a resistor Rs, and the Vs1 wiring and the Vg1 wiring are connected to each other by a resistance Rv. Further, the Sc wiring that is the slice check wiring is connected by the Vs4 wiring and the resistor Rvc, and is connected by the Vg1 wiring and the resistor Rgc. Or you may connect with a signal wiring. Further, as shown in FIG. 8, it may be connected only to the TFT drive wiring, or although not shown, it can be connected to only the bias wiring.

  When the resistance from the TFT driver to the first TFT is Ro and the resistance between the Vg wirings is Rs, the resistance Rs is a resistance that does not affect the adjacent line by the on-voltage Vgh applied to the Vg wiring. You can set it. The adjacent line is held at the off voltage Vg1.

  FIG. 9 is a diagram for explaining a potential in the above-described equivalent circuit. If the potential Va at the point a is lower than the threshold voltage Vth of the TFT, the adjacent line can be kept off.

Vth> Va ＝ Vg1 + (Vgh-Vg1) × Ro / (Rs + 2Ro) ……… (1)
Rs> Ro (Vg1-Vth-2Vth) / (Vth-Vg1)
Here, since Vg1 = −5V, Vgh = 15V, Vth = 2V, and Ro = 100Ω, Rs> 86Ω.

  Similarly, for the resistor Rv, Vsh = 9V when the bias wiring Vs of the photosensor reads light, so that Vsh−Vg1 = 14V as compared with Vgh−Vg1 = 20V in the above equation. If Rv> Rs, the malfunction of the TFT can be prevented by driving the Vs wiring. Further, if the variation of the Vs potential is within a range that does not cause a problem in terms of characteristics, the variation amount needs to be 1% or less, and the resistance Rv is Rv> 100 × Ro. In this embodiment, it is sufficient if Rv> 10 kΩ. Further, regarding Rvs, since the fluctuation of the bias potential of the optical sensor is 1% or less, Rvs> 100 × Ro.

  Further, the connection resistance Rgc between the Sc wiring and the Vg1 wiring, which is the slice check wiring, is calculated as Vg1 = 0V in the equation (1), and Rgc = 550Ω. Further, if the connection resistance Rvs between the Sc wiring and the Vs4 wiring is Rvs> 100 × Ro, the fluctuation of the bias potential of the photosensor can be suppressed to 1% or less.

In this embodiment, each wiring can be connected using an ohmic layer (n ⁺ ), and 1 MΩ is set as a standard with a sufficient margin for each of the above connection resistance values.

FIG. 10 shows a schematic plan view of the Vg wiring connection. In the figure, 51 is an Al wiring, 52 is a Cr wiring, 53 is a contact hole, and 54 is an n ⁺ connection wiring portion.

When the Vg wirings are connected in an n ⁺ layer, the Vg wiring is connected from the Cr wiring to the Al wiring through a contact hole outside the pixel region in order to reduce wiring resistance. Connected with ⁺ layers.

Moreover, the schematic diagram of the cross section of the AA part in FIG. 10 is shown in FIG. 58 is a glass substrate, 55 is a gate insulating film, 56 is a semiconductor layer, and 57 is an n ⁺ ohmic contact layer. In the present embodiment, the n ⁺ layer is set to 1000 mm as in the first embodiment, and the sheet resistance at that time is 100 kΩ / □. Since the pixel pitch is 160 μm, if there are 10 sheets or more, the connection can be made with 1 MΩ. Therefore, in this embodiment, the wirings are connected by 10 μm. Similarly, the Vs wirings are connected by an n ⁺ layer.

Next, a connection method between the Vg wiring and the slice check wiring will be described. FIG. 12 is a schematic plan view of the connection form. The Cr wiring which is the slice check wiring is connected to the Vg wiring through the contact hole. FIG. 13 shows a schematic diagram of a cross section taken along line AA in FIG. In the contact hole 53, the Vg wiring 51 and the slice check line 52 are connected. Also in this case, the n ⁺ layer is routed so that the wiring resistance is 1 MΩ. After the conductivity check is completed, the slice check wiring may be cut and removed at the connection portion between the TFT drive wiring and the photoelectric conversion element drive wiring, or the resistance of the connection portion may be adjusted to adjust the element. If it does not become an obstacle to driving, it may be left as it is.

  In this embodiment, a TFT is shown as an example of a functional element, but the present invention is not limited to this, and a diode or a thin film diode may be used as a matter of course.

(Fourth embodiment)
As a fourth embodiment of the present invention, a case will be described in which a slice check line is connected to a Vs wiring without a special resistor. FIG. 14 shows an equivalent circuit of this embodiment. In the present embodiment, the Vs4 wiring and the slice check wiring Sc are connected in the same layer. It is also possible to create by bonding between different layers. Furthermore, it is possible to connect to the Sc wiring from the Vs1 or Vs2 wiring. Also in this embodiment, after cutting the panel, by conducting the conductivity check in the pad Cp for conductivity check, it is possible to check the defective product and not the ground potential, but the fixed potential. Therefore, it becomes possible to protect the device from electrostatic breakdown.

  The present invention is also an effective means for narrowing the frame of a liquid crystal panel or the like. In the case of a liquid crystal panel, for example, two glass substrates are prepared, an element is formed on the substrate, the substrate is cut into a desired size, the two substrates are bonded together, and a liquid crystal is poured into an intermediate portion thereof, Form a panel. Then, electrical mounting such as a driver is performed. Therefore, in a liquid crystal panel or the like, a defective product can be checked by connecting the slice check wiring to the drive wiring and inspecting the conductivity of the slice check wiring, and the TFT control wiring and slice check wiring. By connecting, pixel destruction due to static electricity or the like can be prevented. In addition, since the substrates are usually bonded and liquid crystal is injected in the manufacturing process of the liquid crystal panel, the conductivity check may be performed before or after the substrates are bonded. In a liquid crystal panel, the slice check wiring does not necessarily have the same potential.

In this embodiment, a TFT is shown as an example of a functional element, but the present invention is not limited to this, and a diode or a thin film diode may be used as a matter of course.
(Fifth embodiment)
FIG. 22 shows an application example of the photoelectric conversion device of the present invention to an X-ray diagnostic system.

  X-rays 6060 generated by the X-ray tube 6050 pass through the chest 6062 of the patient or subject 6061 and enter the photoelectric conversion device 6040 having the phosphor mounted thereon. However, in a device using a substance that is directly sensitive to radiation such as X-rays, for example, GaAs, it is possible to make it sensitive to radiation without providing a phosphor. This incident X-ray includes information inside the body of the patient 6061. The phosphor emits light in response to the incidence of X-rays, and this is photoelectrically converted to obtain electrical information. This information can be digitally converted and image-processed by an image processor 6070 as a signal processing means, and can be observed on a display 6080 as a display means in a control room.

  Further, this information can be transferred to a remote place by a transmission means such as a telephone line 6090 and can be displayed on a display 6081 such as a doctor room in another place or stored in a storage means such as an optical disk, and a doctor at a remote place makes a diagnosis. It is also possible. Moreover, it can also record on the film 6110 by the film processor 6100 used as a recording means.

1 is an equivalent circuit diagram showing a first embodiment of the present invention. It is typical sectional drawing of the creation process of the panel part which has TFT of the 1st Embodiment of this invention, and a photoelectric conversion element part. It is a typical top view of the bonding panel of the 1st Embodiment of this invention. It is a schematic diagram of the corner part of the panel of the 1st Embodiment of this invention. It is a figure at the time of bonding the panel of the 2nd Embodiment of this invention. It is a figure at the time of using the single panel of the 2nd Embodiment of this invention. It is an equivalent circuit diagram which shows the 3rd Embodiment of this invention. It is an equivalent circuit diagram which shows the other example of the 3rd Embodiment of this invention. FIG. 10 is an equivalent circuit diagram for explaining a potential at a peripheral portion of a TFT drive driver according to a third embodiment of the present invention. It is a typical top view which shows the connection form between the drive wiring of TFT. It is a schematic diagram which shows the cross section in the AA part of FIG. FIG. 5 is a schematic plan view showing a connection form between a TFT drive wiring and a slice check wiring. It is a schematic diagram which shows the cross section in the AA part of FIG. It is an equivalent circuit diagram which shows the 4th Embodiment of this invention. It is a top view of the conventional photosensor. It is a schematic diagram of the cross section of the conventional PIN type optical sensor. It is a perspective view of the conventional radiographic image reading apparatus. It is a schematic diagram of the cross section of the conventional radiographic image reading apparatus. It is a typical top view of a bonding panel. It is an enlarged view of the joint part center part of a bonding panel. It is a typical top view of a panel cutting part. It is a system diagram at the time of applying the semiconductor device of the present invention to an X-ray diagnostic apparatus.

Explanation of symbols

DESCRIPTION OF SYMBOLS 11 Driver for TFT drive 12 Signal processing amplifier 13 Driver for driving MIS type optical sensor C11 to C35 MIS type optical sensor T11 to T35 TFT
Vg1 to Vg3 TFT drive wiring Sig1 to Sig5 Signal wiring Vs1, Vs2 Bias wiring Sc Slice check wiring

Claims (5)

In the semiconductor device structure that large area by the panel obtained by cutting a substrate having a functional element of the multiple is affixed in plurals,
Around wiring for checking the quality of the cutting result of the panel are arranged along the periphery of the panel,
It said peripheral wiring to a semiconductor device, characterized in that the driving interconnection of the plurality of functional elements are connected to a circuit including the reference voltage when inspecting the conductivity is applied. The semiconductor device according to claim 1, the semiconductor device wherein the peripheral wiring which is connected to the pad portion for inspection of the conductive.   2. The semiconductor device according to claim 1, wherein a TFT element and a photoelectric conversion element are configured as the functional elements on the substrate, and the peripheral wiring is connected to a bias wiring of the photoelectric conversion element. . The semiconductor device according to any one of claims 1 to 3, a semiconductor device wherein the substrate is a glass substrate. 4. The semiconductor device according to claim 3 , wherein a phosphor is provided on the functional element.