JP4589375B2 - Semiconductor device - Google Patents

Description

  The present invention mainly aims to prevent counterfeiting of paper or film-like media, such as various token device media, securities, various cash vouchers, important documents, IC cards, prepaid cards, etc., and is a batteryless non-contact recognition method utilizing a semiconductor chip. Belongs to the technology related to the realization means.

As a technique relating to the present invention, first, Japanese Patent Laid-Open No. 8-50672 will be described (Patent Document 1). This technology relates to a security thread recognition device for various token device media, in which a metal pattern such as characters is embedded in various token device media to electrically detect this pattern with or without metal. is there. Basically, it is difficult to forge by putting some metal pattern for the purpose of applying forgery by applying advanced copy technology only to ordinary paper.
Next, the prior art disclosed in JP-A-8-202844 will be described (Patent Document 2). In this technique, a semiconductor chip is connected to a base substrate made of paper or synthetic paper with an anisotropic conductive paste.

  FIG. 4 shows an example of a conventional technique. It shows that there is a crack 42 from the chipping 41. In this figure, the pad 43 is on the semiconductor chip 44 and the conductive particles 46 in the adhesive resin 45 may be short-circuited to the edge, and the conductive particles 48 have the antenna wiring 47 on the substrate 49. The role which contributes to the connection with the electrode is shown.

  FIG. 7 shows another conventional example. The adhesive resin 71 is a semiconductor chip having an aluminum pad 73 and a surface oxide film 74 on the surface of the device silicon layer 72. The conductive particles 75 are dispersed, and the conductive particles 77 captured on the surface of the gold pad 77 are electrically connected to the antenna wiring 78. The state which contributes to is shown. The insulator 79 is a passivation film. This figure shows a cross-sectional structure of a semiconductor chip connected by a conventional anisotropic conductive adhesive.

JP-A-8-50672 JP-A-8-202844

  The present inventor considers that the following problems exist in JP-A-8-50672 disclosed as the prior art. That is, if measures are taken with respect to counterfeiting of various token device media, it is considered that there is a technical added value as to whether or not the counterfeit method is easy. In this conventional example, it is stated that a metal pattern is encapsulated in various token device media. However, this method not only facilitates the pattern creation method but also has a risk of nearly recommending a forgery method. ing. Anti-counterfeiting technology increases reliability at the same time as a mission to improve safety, so there is a risk that it will become completely unguarded against advanced counterfeiting, and easy anti-counterfeiting technology acts to increase counterfeiting on the contrary It is necessary to think deeply about having In this case, although it is at the technical level of metal pattern creation, it is obvious that if the detection technology is the presence or absence of metal, it can be elucidated without using advanced technology if it is opened and examined precisely. That is, since the presence or absence of a metal pattern is a necessary condition, it is sufficiently possible to select the means for realizing it at a normal technical level.

  The present inventor thinks that this technique is a problem related to Japanese Patent Laid-Open No. 8-202844, but that this technique is not a simple material change but considers a thin medium such as paper. It is thought that further examination on strength is required. Considering a structure in which the structure of this conventional example has a thickness of 100 microns or less, how to catch the problem is completely different depending on whether there is any mechanical stress. In other words, mounting a semiconductor chip on a thin paper-like medium needs to clarify different constraints. It is necessary to consider the thickness and size of the semiconductor chip. For example, whether or not a 1 mm semiconductor chip can withstand a normal use level with a paper having a thickness of 100 microns requires whether it can withstand use, not whether it can be made structurally. The present inventor has considered that this known example alone is insufficient to produce a thin medium mounting form of 100 microns or less that can withstand practical use.

  Next, problems in the conventional example of FIG. 4 will be described. Semiconductor chips diced with a diamond blade are used for processing the peripheral part of the semiconductor chip. Therefore, when external stress is applied to the semiconductor chip, cracks such as cracks occur when the stress is concentrated around the semiconductor chip. Department or all functions are lost. When a semiconductor chip is encapsulated in a thin medium such as paper, the stress of bending or concentrated load is likely to be applied, so there is a problem that leads to destruction of the semiconductor chip even if there is slight chipping or chipping around the semiconductor chip. .

  Next, problems in the conventional example in FIG. 7 will be described. In this structure, there are no considerations for having gold bumps and side effects on anisotropic conductive adhesive or conductive adhesive around the semiconductor chip, that is, increase due to the presence of vertical and horizontal gold bumps and short circuit around the semiconductor chip. As a result, there is a problem that the structure of the semiconductor chip including the gold bump is abnormally thick and prevents a structure that is strong against bending from being obtained.

  A first means for solving the above problem is that a semiconductor chip has a planar dimension of 0.5 mm or less in the long side, and the semiconductor chip is inserted into a paper or film-like medium with an antenna and has a plurality of bits. The semiconductor device is characterized by transmitting the above information.

  According to a second means for solving the above-mentioned problem, a semiconductor device is characterized in that the periphery of the semiconductor chip is formed of an insulating material, and the terminals on the semiconductor are connected to the terminals of the mounting substrate with a conductive adhesive. It is.

  A third means for solving the above-mentioned problem is that the planar dimension of the semiconductor chip is 0.5 mm or less in the long side, the semiconductor chip is separated by etching, and the antenna is attached to a paper or film-like medium. The semiconductor device is characterized in that it is inserted in a state and sends out information of a plurality of bits.

  A fourth means for solving the above-described problem is that the semiconductor chip has a planar dimension of 0.5 mm or less in the long side and is formed by direct drawing with an electron beam inserted into a paper or film medium with an antenna. Another object is to provide a semiconductor device characterized by transmitting a plurality of bits of information.

  A fifth means for solving the above-mentioned problem is a state in which the semiconductor chip has a planar dimension of 0.5 mm or less in the long side, the semiconductor chip pad is formed of tungsten, and an antenna is provided in a paper or film-like medium. And a plurality of bits of information are transmitted.

  A sixth means for solving the above-described problem is that the planar dimension of the semiconductor chip is 0.5 mm or less on the long side, and one or a plurality of pads of the semiconductor chip are present on the device on the semiconductor main surface. A semiconductor device is characterized in that it is inserted into a film-like medium with an antenna and transmits a plurality of bits of information.

  A seventh means for solving the above-mentioned problem is that a semiconductor chip has a planar dimension of 0.5 mm or less in a long side and is inserted into a paper or film-like medium with a capacitor built-in antenna so that a plurality of bits of information can be obtained. The semiconductor device is characterized by being sent out.

  The eighth means for solving the above-mentioned problem is that the semiconductor chip has a planar dimension of 0.5 mm or less in the long side and is inserted into a paper or film-like medium with an antenna to send out a plurality of bits of information. The semiconductor device is characterized in that the information is encrypted and printed on a medium.

A ninth means for solving the above-described problem is that the planar dimension of the semiconductor chip is 0.5 mm or less on the long side, and a plurality of pads smaller than the pad for connecting to the antenna for generating random numbers on the semiconductor chip are provided. The semiconductor device is characterized in that there are two semiconductor devices.
A tenth means for solving the above problem is that there is a writable memory area in the semiconductor chip, there is an area for generating the first random number in the semiconductor chip, and the first random number is After being read and encrypted and written in the memory area, a second random number different from the random number is given to the semiconductor chip, and the first random number is encrypted and read. The semiconductor device is characterized in that it is confirmed that the semiconductor chip is not forged by reading the contents of the memory area and returning to the second random number.

An eleventh means for solving the above-mentioned problem is that a carrier wave is periodically amplitude-modulated in units of a plurality of frequencies and given to a semiconductor chip with an antenna, and the leading edge of each period is used as a clock, It is a semiconductor device characterized in that one bit of information in the semiconductor chip is sent out by changing the antenna load inside the semiconductor device.
A twelfth means for solving the above-described problem is that a carrier wave is periodically amplitude-modulated in units of a plurality of frequencies and applied to a semiconductor chip with an antenna. The semiconductor chip has a counter, and the leading edge of each period is clocked. And the counter output selects the memory output, changes the antenna load in the semiconductor chip within the period, and sends 1 bit of information in the semiconductor chip. The semiconductor device is characterized.

  A thirteenth means for solving the above problem is to provide a semiconductor device characterized in that a plurality of semiconductor chips share one antenna, and each semiconductor chip operates in view of the load state of the antenna.

  The fourteenth means for solving the above-mentioned problem is that all physical information of the size, thickness, position and degree of the semiconductor chip inserted into a paper or film-like medium with an antenna and transmitting multiple bits of information Alternatively, a part of the semiconductor device is encrypted and printed.

  According to a fifteenth means for solving the above-mentioned problem, the planar dimension of the semiconductor chip is 0.5 mm or less in the long side, and the semiconductor chip is placed between two or more roll sheets in a paper or film-like medium. A semiconductor device is characterized in that it is inserted with an antenna and transmits information of a plurality of bits.

  A sixteenth means for solving the above-mentioned problem is a fifteenth means for solving the above-mentioned problem, wherein an antenna smaller than the size of the semiconductor chip is mounted on the semiconductor chip, and the semiconductor chip is made of a paper or film-like medium. A semiconductor device is characterized in that a plurality of bits are inserted therein and a plurality of bits of information are transmitted without interference.

  A seventeenth means for solving the above-mentioned problem is that a semiconductor chip has a planar dimension of 0.5 mm or less in the long side, and the semiconductor chip is inserted into a paper or film-like medium with an antenna so as to have a plurality of bits. The semiconductor device is characterized in that each semiconductor chip is not disposed at a folding position that is an integral multiple of the medium.

  An eighteenth means for solving the above problem is that a semiconductor chip has a planar dimension of 0.5 mm or less in a long side, and the semiconductor chip is inserted into a paper or film-like medium with an antenna and has a plurality of bits. The corner of the semiconductor chip has a taper cut that is 1/100 or more of the long side length.

  A nineteenth means for solving the above-described problem is that a semiconductor chip has a planar dimension of 0.5 mm or less in the long side, and the semiconductor chip is inserted into a paper or film-like medium with an antenna, and has a plurality of bits. The semiconductor device is characterized in that the semiconductor chip is present in the Braille convex portion.

  A twentieth means for solving the above-mentioned problem is that the planar dimensions of a plurality of semiconductor chips have a long side of 0.5 mm or less, and the semiconductor chips are inserted into a paper or film-like medium with an antenna. A semiconductor device is characterized in that information of a plurality of bits is transmitted, and information of each semiconductor chip is formed into an encrypted pattern and printed on a medium.

  A twenty-first means for solving the above-described problem is that a semiconductor chip has a planar dimension of 0.5 mm or less in a long side, and the semiconductor chip is inserted into a paper or film-like medium with an antenna and is a plurality of bits. The semiconductor device is characterized in that a metal thicker than the semiconductor chip is bonded to the semiconductor chip.

  According to a twenty-second means for solving the above-mentioned problem, a semiconductor chip has a planar dimension of 0.5 mm or less in a long side, and the semiconductor chip is inserted into a Japanese paper medium with an antenna to store a plurality of bits of information. The semiconductor chip is characterized in that the semiconductor chip is treated as a part of the Japanese paper fiber when the Japanese paper is spread and is mounted on or inside the Japanese paper.

  A twenty-third means for solving the above problem is to provide a semiconductor device according to any one of claims 1 to 22, wherein the semiconductor chip is made of a silicon-on-insulator wafer.

  A twenty-fourth means for solving the above-described problems is to provide a semiconductor device according to any one of claims 1 to 22, wherein the semiconductor chip has a thickness of 50 microns or less.

  According to a twenty-fifth means for solving the above problem, in the semiconductor device having at least an antenna and an IC semiconductor chip for transmitting and receiving information in a state where there is no electrical contact with the reader / writer, the antenna is a pair of strip-shaped conductive members. The width of the portion connected to the IC semiconductor chip is smaller than the length of at least one side of the IC semiconductor chip.

  According to a twenty-sixth means for solving the above problem, at least a semiconductor device having an antenna and an IC semiconductor chip for transmitting and receiving information in the absence of electrical contact with a reader / writer is formed by the IC semiconductor chip device. The antenna is made of a pair of thin wire conductors on the opposite side and the cross-sectional area of the antenna connected to the IC semiconductor chip is smaller than the area of the IC semiconductor chip. This is a semiconductor device.

  The twenty-seventh means for solving the above-described problems includes at least a step of forming the IC semiconductor chip on a semiconductor wafer, a step of bonding the semiconductor wafer to a predetermined support, a step of separating the IC semiconductor chips from each other, 27. The method of manufacturing a semiconductor device according to claim 25, further comprising a step of simultaneously connecting the plurality of IC semiconductor chips separated on the support and the plurality of antennas.

  A twenty-eighth means for solving the above-described problem has a step of simultaneously connecting a plurality of IC semiconductor chips arranged in a straight line and a plurality of the antennas among the IC semiconductor chips separated on the support. 28. A method of manufacturing a semiconductor device according to claim 27.

  A twenty-ninth means for solving the above-described problem includes a step of simultaneously connecting a plurality of IC semiconductor chips arranged two-dimensionally and a plurality of the antennas among the IC semiconductor chips separated on the support. 28. A method of manufacturing a semiconductor device according to claim 27.

  According to a thirtieth means for solving the above-described problem, at least a semiconductor device having an antenna and an IC semiconductor chip for transmitting and receiving information in the absence of electrical contact with a reader / writer is formed by the IC semiconductor chip device. The semiconductor device has a pair of antennas on the opposite side and the opposite side, and a main surface of the IC semiconductor chip is inclined with respect to a major axis direction of the antenna. .

  The present invention can provide a semiconductor device useful for preventing counterfeiting of paper or film-like media such as various token device media, securities, various cash vouchers, important documents, IC cards, and prepaid cards.

  FIG. 1 shows an embodiment of the present invention. The semiconductor chip side wall oxide film 11 is on the side of the device layer silicon 12, and the pad 13 is on the surface of the semiconductor chip having the back surface oxide film 14 and the semiconductor chip side wall oxide film 15, and is connected to the antenna wiring 17 by the adhesive resin 16. The antenna wiring is formed on the surface of the substrate 18 with a conductive material such as silver paste. The conductive particles 19 are directly between the pad and the antenna wiring and contribute to the conduction in the vertical direction. However, the conductive particles 19a are near the side of the semiconductor chip and do not contribute directly to the conduction between the pad and the antenna wiring. However, in the case of a semiconductor device in which the periphery of the semiconductor chip is formed of an insulating material and the terminals on the semiconductor are connected to the terminals of the mounting substrate with a conductive adhesive, the conductive particles are in contact with the edges of the semiconductor chip. However, there is no short circuit between the antenna wiring and the semiconductor chip. In addition, the effect is particularly remarkable when a normal conductive adhesive is used instead of the anisotropic conductive adhesive. That is, even if the conductive adhesive contacts the edge of the semiconductor chip, it does not cause an electrical short circuit.

  2A to 2F show another embodiment of the present invention. FIG. 2A shows a cross section of a process immediately after a semiconductor chip is completed in a wafer shape. The side wall oxide film shown in FIG. 1 is oxidized in advance to a position where the semiconductor chip is separated in a wafer state, and it is connected to the main surface and the oxide film of the oxide film layer 23. The pad 21 is formed on the device layer silicon 22, and the oxide film layer 23 has a sandwich structure sandwiched between the silicon substrate 24 and the device layer silicon. This structure is a silicon-on-insulator wafer. FIG. 2B shows a cross-sectional view of the process immediately after the supporting tape is continuously attached to the main surface of the wafer. Reference numeral 30 in FIG. 2B denotes an adhesive layer. Hereinafter, the code | symbol 30 shows the same adhesive bond layer. FIG. 2C shows a sectional view immediately after the step of removing the silicon substrate 24 by etching with potassium hydroxide, hydrazine, ammonia or the like. FIG. 2D shows a cross-sectional view immediately after the photoresist 26 is applied to the back surface of the wafer and exposed and developed. The patterning of the portion to be separated into the semiconductor chip has been finished. FIG. 2E shows a cross-sectional view of the process immediately after the etching groove 27 is formed. For the etching, hydrofluoric acid or a mixed solution thereof for etching the oxide film or dry etching is used. FIG. 2F shows a cross-sectional view in which the semiconductor chip is expanded by the expanded support tape 28. In this way, a thin, small and chipless semiconductor chip can be easily and economically produced. The planar dimension of the semiconductor chip is 0.5 mm or less on the long side, and the semiconductor chip is separated by etching as in the embodiment, and is inserted into a paper or film-like medium with an antenna. Form what is characterized by sending bit information.

  FIG. 3 shows another embodiment of the present invention. The pad 31 is formed on an active device such as the memory mat 32, the readout circuit 33, the selector circuit 34, the transmission / reception circuit 36, and the power supply circuit 38. In this way, it is possible to form a pad having a large area for reliable and stable connection with the antenna wiring. A semiconductor chip side wall oxide film 35 exists around the semiconductor chip to prevent a short circuit with the conductive adhesive. The pad 31 is connected to the circuit by a through hole 37. The semiconductor chip has a small pad 39 for random number generation, and in this portion, the semiconductor chip and the antenna can obtain a value in which the analog value has changed due to the contact resistance with the conductive particles between the latitudes and the capacitance variation with the ferroelectric. Therefore, the random number generation circuit 39a performs analog-digital conversion to obtain information. This value can be used as unique information that does not repeat like a human fingerprint, and can contribute to prevention of counterfeiting of a medium in which this semiconductor chip is used. This unique information is lost when the semiconductor chip and the antenna wiring are separated, and thus has a strong characteristic against tamper resistance, that is, forgery. As described above, one or a plurality of pads exist on a device on the semiconductor main surface, and the semiconductor is characterized by being inserted into a paper or film-like medium with an antenna and transmitting a plurality of bits of information. The device is characterized in that the planar dimension of the semiconductor chip is 0.5 mm or less on the long side, and there are a plurality of pads smaller than the pads for connecting to the antenna for generating random numbers on the semiconductor chip. The semiconductor device is effective for preventing counterfeiting. Further, the memory mat 32 is arbitrarily printed with random numbers by direct electron beam drawing onto a pattern on each semiconductor chip on a wafer.

  FIGS. 5A to 5C show another embodiment of the present invention. FIG. 5A is a plan view showing a state in which the semiconductor chip 51 is connected to the antenna 52 and exists in the film-like medium. FIG. 5B is one of the cross-sectional views of FIG. 5A, in which electrodes are taken from the front and back of the semiconductor chip to form antenna electrodes 1 and 55 that form a capacitor and antenna electrode 2 that forms a capacitor. , 56 are taken, and a capacitance is formed by these electrodes. As a result, it is possible to form a small semiconductor chip having no capacitance on the semiconductor chip side, and to produce a semiconductor chip advantageous in terms of economy and yield. In FIG. 5C, a plurality of electrodes are taken from the surface of the semiconductor chip, and antenna electrodes 3 and 57 forming a capacitor and antenna electrodes 4 and 58 forming a capacitor are taken, and a capacitor is formed by these electrodes. The These semiconductor devices have a semiconductor chip having a planar dimension of 0.5 mm or less on the long side and are inserted into a paper or film-like medium with a capacitor built-in antenna to transmit a plurality of bits of information. By doing so, it is possible to obtain an economical and effective anti-counterfeit recognition function device.

  FIG. 6 shows another embodiment of the present invention. The adhesive resin 61 has a back surface oxide film 62, and in a semiconductor chip having a side wall oxide film 66 on the side of the device silicon layer 63, tungsten on the surface oxide film 66 is dispersed by an anisotropic conductive adhesive in which conductive particles 65 are dispersed. The pad 68 can be electrically connected to the antenna wiring 69 by the conductive particles 67. Because the pad is formed of tungsten or a metal that does not oxidize, and by using a sidewall oxide film, a combination of a thin semiconductor chip and an antenna that does not short-circuit is formed. As described above, the planar dimension of the semiconductor chip is 0.5 mm or less in the long side, the pad of the semiconductor chip is formed of tungsten, and is inserted into a paper or film-like medium with an antenna so that a plurality of bits of information can be obtained. Various token device media for preventing counterfeiting are formed as semiconductor devices characterized by being sent out.

  FIG. 8 shows another embodiment of the present invention. The medium surface print pattern 81 is on the surface of the film-like medium 83, and the semiconductor chip 82 including the antenna exists therein. If only the information in the read-only memory of the semiconductor chip is emulated as it is, there is no resistance to forgery prevention, so if the information is encrypted and printed as a numerical value or pattern, it is more strictly confirmed whether it is forgery or not. be able to. Further, since the semiconductor chip only needs to be a read-only memory, the semiconductor chip can be produced with a small size. That is, the semiconductor chip has a planar dimension of 0.5 mm or less in the long side, is inserted into a paper or film-like medium with an antenna, and sends out a plurality of bits of information, and the information is encrypted and the medium is encrypted. Various token device media that are resistant to counterfeiting are formed by using the semiconductor device printed on. The encrypted print information is further used using a combination of special ink, magnetic material, and the like.

  9A and 9B show another embodiment of the present invention. FIG. 9A shows a plan view of the semiconductor chip 91. The conductive particles 92 are dispersed on the small pad 93. A writable memory area 97 exists in the semiconductor chip. FIG. 9B shows a cross-sectional view in which the semiconductor chip 91 is connected to the antenna wiring 95 on the substrate 96 with an adhesive resin 94. The analog-to-digital conversion is performed by the random number generator because the analog value is changed by the contact resistance between the semiconductor chip and the antenna wiring at the small pad portion of the semiconductor chip and the capacitance variation with the ferroelectric substance. Go and computerize. This value can be used as unique information that does not repeat, such as human fingerprints and ink patterns, and can contribute to prevention of counterfeiting of the medium on which this semiconductor chip is used. Since this unique information disappears when it is separated from the semiconductor chip and the antenna wiring and is difficult to reproduce, it has a strong characteristic against tamper resistance, that is, forgery.

  FIG. 10 shows another embodiment of the present invention. This figure shows an embodiment of a forgery prevention protocol using the semiconductor chip of the present invention and the random number generation circuit therein. There are two types: open and closed. First, an example of an open type protocol will be described. In the open type, a random number N generated by the semiconductor chip in the card is inquired from the inquirer such as a reader / writer to the semiconductor chip of the present invention on a film medium such as a card at the time of initialization. After returning N, the card closes the N reading circuit by itself or by the command of the inquirer and makes the reading impossible. When the inquirer receives N, it registers it in the database. Next, at the time of operation, the inquiryer first inquires about the ID of the card. When the card ID is returned to the inquirer, the inquirer further sends a random number to the card. The card encrypts the random number with N as a key and returns it to the inquirer. The inquirer compares the N obtained from the database with the numerical value decoded this time, and if it is the same, it is regarded as a valid card. In this embodiment, the card can be used without being particularly limited for application of the forming medium of the present invention, that is, various token device media, securities and the like. Next, in the closed type, there is a writable memory area in the semiconductor chip, and N encrypted from the inquirer is written into the memory area of the card at the initial time. Thereafter, the N reading circuit on the card side is closed. Next, a second random number different from the random number N in the semiconductor chip is given to the semiconductor chip, and the random number N is encrypted and read out. On the other hand, by returning to the second random number, it is confirmed that the semiconductor chip is not forged. By these things, N is checked safely and authentication that it is a valid card is performed.

  11A and 11B show another embodiment of the present invention. FIG. 11A shows a waveform of an electromagnetic wave sent from the inquirer according to the present invention to a paper or film medium including a semiconductor chip. Although the frequency of the carrier wave is arbitrary, the carrier wave is amplitude-modulated, and when the nth clock 111 is given, the data of the nth address of the read only memory is sent from the semiconductor chip. Therefore, the second half of the clock cycle is a period in which the nth data 112 is transmitted. Similarly, the period of the (n + 1) th clock 113 and the (n + 1) th data 114 continues. These are repeated and the contents of the read-only memory in the semiconductor chip are read into the inquirer. That is, the carrier wave is periodically amplitude-modulated in units of multiple frequencies and given to the semiconductor chip with the antenna, and the leading edge of each period is used as a clock, and the antenna load in the semiconductor chip is changed within the period to change the antenna load. The semiconductor device is characterized by transmitting one bit of information in the semiconductor chip. FIG. 11B shows a circuit block diagram in the semiconductor chip 118. The antenna 115 is connected to the rectifier 116 and supplies a voltage into the semiconductor chip. At the same time, the counter 119 is entered, and data is sent bit by bit together with the selector 119a of the output of the ROM 117. With these configurations, a small semiconductor chip is configured. That is, a carrier wave is periodically amplitude-modulated in units of multiple frequencies and given to a semiconductor chip with an antenna, and the semiconductor chip has a counter, and is input to the counter using the leading edge of each period as a clock. Further, the output of the counter selects the memory output, changes the antenna load in the semiconductor chip within the period, and transmits one bit of information in the semiconductor chip, thereby forming a semiconductor device.

  FIG. 12 shows another embodiment of the present invention. In the film-like medium 124, the first semiconductor chip 121 and the second semiconductor chip 123 are connected to both ends of the antenna 122. In general, a plurality of semiconductor chips share one antenna, and each semiconductor chip forms a semiconductor device that operates by looking at the load state of the antenna. In this way, it is possible to easily mount a plurality of semiconductor chips without having a complicated radiation circuit in the semiconductor chip, and to assist other semiconductor chips in the event of breakage, thereby improving the reliability of the medium. Can be improved. Furthermore, by providing specific information to a plurality of semiconductor chips, communicating with each other, and transmitting data when a plurality of conditions are met, a system with higher security is constructed.

  FIG. 13 shows another embodiment of the present invention. The semiconductor chip 131 is enclosed in a film-like medium 133 having an encrypted physical information entry field 132 on the surface. In order to prevent counterfeiting, it is a necessary condition that it is difficult to accurately create the physically same thing and that the discrimination technique is advanced. It is difficult to make a semiconductor chip imitation product called a clone without producing a semiconductor chip itself by a high-level process technology and without manufacturing technology. Semiconductor process technology is represented by the precision level of fine patterns. Therefore, even if the same function is realized, the higher the process technology, the smaller the semiconductor chip size, and the technical level will improve with time and the function will be the same. The functionality will be improved. All or part of the physical information of the size, thickness, position, and degree of the semiconductor chip that is inserted into a paper or film-like medium with an antenna and sends out multiple bits of information is encrypted and printed. By making the semiconductor device characterized by this, it becomes easy to distinguish whether the semiconductor chip and the mounting method are counterfeit.

  FIG. 14 shows another embodiment of the present invention. A semiconductor chip that has a first cover film roll 141 and a second cover film roll 144, and a semiconductor chip 142 is inserted between the first cover film 145 and the second cover film 143 to complete the take-up roll 146. The medium containing is wound up. The cover film is not particularly selected from materials such as paper, synthetic paper, plastic, cloth, and fiber cloth. The semiconductor chip is automatically picked up and positioned. There are cases where an antenna is attached to this semiconductor chip in advance, and there are cases where printing or wires are present on the first or second film and bonded with a conductive adhesive at the time of insertion. There is another adhesive, such as urethane, cyanol, or UV curable adhesive, on the surface of the intermediate bonding film where the semiconductor chip is inserted, so that the flatness and rigidity of the finished medium can be secured at low temperatures. Is done.

  15A and 15B show another embodiment of the present invention. FIG. 15A shows one form in which a plurality of semiconductor chips 151 are dispersed and arranged in a film-like medium 152. FIG. 15B shows an example in which the semiconductor chip 151 of FIG. 15A has a small antenna 154 mounted on the semiconductor chip. The shape and characteristics of the antenna vary depending on the radio frequency and energy used. As one of the methods for forming the antenna, it is conceivable to form a fine wiring in a coil shape using a semiconductor wiring process technology. In addition, if multilayer wiring or copper wiring technology is used, it is possible to obtain a coil that is compact and has a low resistance and a long wiring length. Further, if an antenna is formed with an on-semiconductor chip, it is possible to increase the reliability of antenna connection and reduce the manufacturing process, thereby making it possible to produce a semiconductor chip economically. In addition, if a plurality of semiconductor chips are distributed and arranged on a medium, non-repeatability can be ensured, and it becomes possible to be a compensation means for a semiconductor failure, thereby preventing forgery and improving reliability. Can do. A semiconductor device characterized in that an antenna smaller than the size of the semiconductor chip is mounted on the semiconductor chip, and a plurality of such semiconductor chips are inserted into a paper or film-like medium and a plurality of bits of information are transmitted without interference. When it is formed, it becomes easy to realize various token device media for preventing forgery.

  FIG. 16 shows another embodiment of the present invention. A first antenna pad 161 and a second antenna pad 162 exist on the active device of the semiconductor chip and are connected to both ends of the antenna coil 163. Although a coiled antenna is assumed in this figure, each antenna terminal of a dipole antenna may be used. The first antenna pad is connected to the transmission / reception circuit of the semiconductor chip through the first through hole 164, and the second antenna pad is connected to the transmission / reception circuit of the semiconductor chip through the second through hole 165. In this way, a plurality of pads are placed on the active device and connected to an antenna or an external capacitor as necessary. The pad and antenna terminal are connected by crimping or adhesive. If an anisotropic conductive adhesive is used as the adhesive, a plurality of pads and the wiring pattern of the substrate can be efficiently connected by a single heating and pressing process.

  FIG. 17 shows another embodiment of the present invention. It is a top view of the Example which shows providing the taper-shaped corner 171 in the corner of a semiconductor chip. In order to increase the mechanical strength such as concentrated load and bending and to eliminate the cutting width of the dicing blade and effectively use the semiconductor chip area, the semiconductor chip is separated by an etching technique. At this time, the pattern design of the separation groove is optimized to reduce the mechanical stress concentration by bringing the corner shape of the finished semiconductor chip into a tapered or round shape at the semiconductor chip corner. The planar dimension of the semiconductor chip is 0.5 mm or less on the long side, and the semiconductor chip is inserted into a paper or film-like medium with an antenna and sends out a plurality of bits of information. The corner of the semiconductor chip has a taper cut of 1/100 or more of the long side length, and if it is a variety of anti-counterfeit token device media in the form of a semiconductor device, a highly reliable one can be obtained.

  FIG. 18 shows another embodiment of the present invention. The concentrated load tool 181 is pressed against the film-like medium 182, and the semiconductor chip 183 is positioned below or near the neutral surface of the medium. The film-like medium has silicon rubber 184 on the steel plate 185. Silicon rubber represents an environment in the vicinity of a film-like medium in real life space. The diameter of the concentrated load tool is 1 mm or more. This shows the environment applied as a concentrated load in the real life space. As shown in FIG. 18, the film-like medium is deformed depending on the concentrated load and has a cross-sectional state as shown in FIG. FIG. 19 shows the relationship between the concentrated load resistance and the size of a semiconductor chip having a thickness of 50 microns obtained experimentally in such a state. In a real life space, the extent to which a person presses with a ball-point pen is 700 g, and if the criterion is that it can withstand 1 kg against the concentrated load, from FIG. 19, if the semiconductor chip size of the semiconductor is 0.5 mm or less, the concentrated load The inventor has found that a strong region, 0.5 mm or more, can be separated as a weak region against concentrated load. Based on this fact, the planar dimension of the semiconductor chip is 0.5 mm or less on the long side, and the semiconductor chip is inserted into a paper or film-like medium with an antenna to transmit multiple bits of information. It is a technical restriction to produce various token device media for preventing counterfeiting as a semiconductor device characterized in that the semiconductor chip is produced with a thickness of 50 microns or less. It is a necessary requirement and is considered to be a constituent part of the present invention.

  20A and 20B show another embodiment of the present invention. Among the Braille protrusions 201 on the film-like medium 204 is a semiconductor chip 202 with an antenna 203. Braille protrusions are attached to various token device media and the like, but if the semiconductor chip size is 0.5 mm or less, it can be included in the protrusions. This can contribute to improving the structural strength of the mounting portion of the semiconductor chip. That is, the planar dimension of the semiconductor chip is 0.5 mm or less on the long side, and the semiconductor chip is inserted into a paper or film-like medium with an antenna and sends out multiple bits of information. The reliability of the semiconductor chip can be improved by using various token device media for preventing counterfeiting as a semiconductor device characterized in that the semiconductor chip is present in the raised portion for Braille.

  FIG. 21 shows another embodiment of the present invention. A first semiconductor chip 211 connected to the first antenna 212 and a second semiconductor chip 213 connected to the second antenna 214 are present in the film-like medium 217. At this time, there are a first encryption description area 215 and a second encryption description area 216 on the surface of the film-like medium. Information sent from the first semiconductor chip is printed in the first encryption description area with a numeric value or a special pattern, and information sent from the second semiconductor chip is numeric or special in the second encryption description area. Printed with various patterns. As a result, forgery inspection is possible even if one of the semiconductor chips is destroyed. In general, the planar dimensions of a plurality of semiconductor chips have a long side of 0.5 mm or less, and the semiconductor chips are inserted into a paper or film-like medium with an antenna to transmit a plurality of bits of information. Providing a reliable method by forming various anti-counterfeit token device media as a semiconductor device, characterized in that the information of each semiconductor chip is printed on the medium in an encrypted pattern pattern It becomes possible to do.

  FIG. 22 shows another embodiment of the present invention. Between the first cover film 221 and the second cover film 224, there is a semiconductor chip 223 having a structure in which an antenna 226 is connected to an antenna pad 225. The semiconductor chip is reinforced by a reinforcing metal 222. It has a structure. Reinforcing metal is a material with a large elastic modulus, so that it can improve against concentrated loads. Although it is desirable that the thickness of the reinforcing metal is thick, there is a limit due to the limitation of the thickness of the film-like medium. Accordingly, the thickness of the reinforcing metal is substantially equal to or greater than the thickness of the semiconductor chip, and thereby an improvement effect can be obtained. It is desirable that adhesion between the reinforcing metal and the semiconductor chip is strong. This is necessary to relieve the tensile stress of the thin semiconductor chip. In the present invention, the semiconductor chip has a planar dimension of 0.5 mm or less in the long side, and the semiconductor chip is inserted into a paper or film-like medium with an antenna to transmit a plurality of bits of information. To provide a method having excellent reliability by using various token device media for preventing counterfeiting as a semiconductor device characterized in that a metal thicker than the semiconductor chip is bonded to the semiconductor chip. Is possible.

  FIG. 23 shows another embodiment of the present invention. A number of Japanese paper fibers 231 are arranged on a Japanese paper paper net 235 so that the shape of the paper frame 234 is adjusted. The semiconductor chip 232 with the antenna 233 is inserted together with this Japanese paper fiber. If the semiconductor chip is 0.5 mm or less, it can be treated as a fibrous part and inserted into Japanese paper. In this figure, one semiconductor chip is representatively shown, but it is within the scope of the present invention to mix a plurality of semiconductor chips. That is, the planar dimension of the semiconductor chip is 0.5 mm or less in the long side, the semiconductor chip is inserted into a Japanese paper medium with an antenna, and sends out a plurality of bits of information. The semiconductor chip is treated as a part of the Japanese paper fiber when the Japanese paper is spread, and is mounted on or inside the Japanese paper. Can be provided.

  24 (a) to 24 (g) show another embodiment of the present invention. FIG. 24A shows a cross-sectional view immediately after a device is completed on a silicon-on-insulator wafer having an oxide film layer 242 between a device layer silicon 241 substrate and a silicon wafer 243. FIG. 24B shows a cross-sectional view immediately after the step of attaching the first support sheet 244 to the main surface side of the wafer. FIG. 24C is a cross-sectional view immediately after the step of removing the substrate silicon with a chemical solution that etches only silicon, such as potassium hydroxide. The oxide film layer 242 serves as an etching stopper for the chemical solution, and is effective in obtaining a very thin semiconductor having a thickness of, for example, 0.1 to 50 microns. FIG. 24D shows a cross-sectional view immediately after the step of attaching to the reinforcing metal 245 with the second support sheet 246 attached. FIG. 24E shows a cross-sectional view immediately after the step of removing the first support sheet. FIG. 24F shows a cross-sectional view immediately after the step of applying, exposing, and developing the photoresist 247 in succession. The mask pattern is a line pattern for separating the semiconductor chips. FIG. 24G shows a cross-sectional view immediately after forming the isolation groove by etching the reinforcing metal, the oxide film layer, and the device layer silicon by the etching technique. By these steps, a thin semiconductor chip with a reinforcing metal can be efficiently and stably manufactured with high reliability.

  FIG. 25 shows another embodiment of the present invention. An integer multiple fold line 251 exists along the long side and the short side of the plan view of the film-like medium in the figure. When the semiconductor chip 252 with the antenna 253 is placed therein, the planar dimension of the semiconductor chip is 0.5 mm or less in the long side, and the semiconductor chip is inserted into the paper or film medium with the antenna. It is characterized by sending multiple bits of information, and each semiconductor chip is not placed at a folding position that is an integral multiple of the medium. Even if it is bent at this position, there is no semiconductor chip, the probability of breakage due to bending is reduced, and a highly reliable structure is provided.

  Another embodiment of the present invention will be described with reference to FIGS. 26A and 26B. In this embodiment, the present invention is applied to a proximity non-contact IC card conforming to ISO / IEC14443. FIG. 26A shows a memory and communication control function on a card-like wiring board 9003 on which an antenna coil 9002 is formed. FIG. 26B is a view of a state in which a single IC semiconductor chip 9001 is mounted as viewed from the side where the IC semiconductor chip device is not formed, and FIG. 26B is a semiconductor chip portion of the completed card taken along line AB of FIG. 26A. It is sectional drawing.

  In this embodiment, an IC semiconductor chip 9001 is mounted on a wiring substrate 9003 on which a coil 9002 is formed in a face-down direction where an electrode bump 9004 faces the coil. The wiring substrate 9003 is made of PET (polyethylene terephthalate), and a coil 9002 is formed by screen printing of a conductive paste. An anisotropic conductive adhesive 9005 was used to connect the electrode bump 9004 and the coil 9002. The anisotropic conductive adhesive is obtained by dispersing conductive fine particles in an adhesive layer, and an opposing portion of the electrode bump 9004 and the coil 9002 is electrically connected through the conductive fine particles sandwiched therebetween. Although connected, since conductive fine particles are dispersed, an electrical short circuit does not occur between electrode bumps and coil wirings that are not opposed to each other. Here, the size of the IC semiconductor chip 9001 is 0.3 mm, the thickness is about 30 μm, and the back surface of the Si wafer on which the device is formed is polished and thinned by a combination of mechanical polishing and chemical polishing. Then, dicing was performed to obtain a thin IC semiconductor chip. A card surface layer 9006 made of PET is provided on the side of the IC semiconductor chip 9001 where no device is formed, and the card has a laminated structure in which the IC semiconductor chip 9001 and the resin layer 9007 are sandwiched between two layers of PET. Formed.

  In this embodiment, the semiconductor chip area is small, the thickness is thin, and the printed coil is connected by an anisotropic conductive adhesive, so it is strong against bending and point pressure and can be thinned. A low-cost non-contact IC card can be obtained.

  27A and 27B are diagrams showing another embodiment of the semiconductor device according to the present invention. FIG. 27A is a plan view and FIG. 27B is a cross-sectional view of a semiconductor chip portion. In this embodiment, one Au bump 9013 formed by vapor deposition is provided on each of the IC semiconductor chip 9011 on the side where the device is formed and the back surface, and the bump 9013 is connected to a strip-shaped antenna 9012 made of Sn-plated Cu. Has been. The end portion of the IC semiconductor chip 9011 does not protrude from both sides of the antenna, and the main surface is connected so as to be inclined with respect to the main surface of the antenna 9012. The periphery of the IC semiconductor chip 9011 is filled with a resin 9014, and the whole of the IC semiconductor chip 9011 has a flat strip shape in which the IC semiconductor chip is embedded between a pair of antennas.

The size of the IC semiconductor chip 9011 used in this embodiment is 0.25 mm, the thickness is about 50 μm including the Au bump, and the thickness of the antenna 9012 is 0.15 mm. The IC semiconductor chip 9011 has a structure in which the main surface of the IC semiconductor chip 9011 and the antenna 9012 are approximately 30 degrees so that the IC semiconductor chip does not protrude from the antenna surface. The width of the antenna 9012 is larger than the width of the IC semiconductor chip 9011. .
In this embodiment, since the entire IC semiconductor chip is embedded in the thickness of the dipole antenna, a semiconductor device with extremely good flatness can be obtained, and since the size of the IC semiconductor chip is small, the entire structure is thinned even in an inclined structure. Is possible. The semiconductor device according to the present embodiment may be used alone, but the strip-shaped semiconductor device shown in FIG. 27 is embedded in another base material to obtain, for example, a normal credit card size. Is also possible.

  28A to 28E are views showing another embodiment of the semiconductor device according to the present invention and a method for manufacturing the same. In this embodiment, as shown in the plan view of FIG. 28A and the cross-sectional view of FIG. 28B, two bumps 9023 are formed on the surface of the IC semiconductor chip 9021 on which the device is formed. They are connected by an anisotropic conductive adhesive 9024. The strip-shaped antenna 9022 made of Cu is narrower than the width of the IC semiconductor chip 9021.

  In the manufacture of the semiconductor device according to this example, the antenna member was processed into a lead frame structure connected to the antenna frame 9025 in a state where a large number of antennas 9022 are arranged as shown in FIG. 28C. Here, the pitch of adjacent antennas is equal to the pitch of the IC semiconductor chip 9021 formed on the Si wafer, and the distance between the opposing antennas is equal to the distance between a pair of antennas to be connected to the IC semiconductor chip. FIG. 28D shows a state in which the lead frame-shaped antenna member and the LSI wafer 9026 are overlapped in order to connect the antenna 9022 and the IC semiconductor chip 9021. The LSI wafer 9026 is separated into respective IC semiconductor chips by dicing in a state where the LSI wafer 9026 is bonded to a support sheet stretched on a predetermined sheet frame 9028. In this state, the antenna member is aligned so that the tip of each antenna is arranged on the bump of the IC semiconductor chip on a predetermined row of IC semiconductor chips on the support sheet. FIG. 28E is a diagram showing a cross-sectional structure taken along line AB of FIG. 28D in a state where the antenna 9022 and the IC semiconductor chip 9021 are connected. Of the IC semiconductor chip 9021 bonded onto the support sheet 9027, the tip of the antenna 9022 supported by the antenna frame 9025 is aligned with the IC semiconductor chip at the left end of the figure, and the IC semiconductor is heated by the heating / pressurizing device 9029. A bump 9023 on the chip and the antenna 9022 are connected by an anisotropic conductive adhesive 9024. When the pressurization is finished after heating / pressurizing for a predetermined time, the IC semiconductor chip 9021 and the support sheet 9027 are separated by heat, and the IC semiconductor chip is separated from the support sheet and connected to the antenna. Here, the heating / pressurizing device 9029 has a structure that is long in a direction perpendicular to the drawing sheet. In the connection step described above, all the rows of effective semiconductor chips on the support sheet are simultaneously connected to the antenna, After that, the antenna 9022 is cut from the antenna frame 9025 at CD and CD in the drawing to complete an IC semiconductor chip to which the dipole antenna is connected. Note that the semiconductor chip on the left side of the semiconductor chip to be connected in FIG. 28E has already been connected to the antenna and has been separated, and following this step, the second IC semiconductor chip from the left of the figure and a plurality of columns forming a row with it are arranged. The antenna connection of the IC semiconductor chip is performed.

  As described above, in this embodiment, since the width of the antenna 9022 is narrower than the width of the IC semiconductor chip 9021, a plurality of columnar IC semiconductor chips formed on the Si wafer are simultaneously connected to the antenna. It is possible to obtain the advantage that the throughput of the manufacturing process is large and the cost is low. It is also possible to use the structure shown in FIGS. 28A and 28B of this embodiment by being embedded in a resin or other base material.

  29A to 29D are diagrams showing another embodiment of the semiconductor device according to the present invention and a method for manufacturing the same. In this embodiment, as shown in FIG. 29A, bumps 9033 are formed on the surface of the IC semiconductor chip 9031 on which the device is formed and the back surface on which the device is not formed, respectively, and antenna 9032 and solder 9034, respectively. Connected with. The thin wire antenna 9032 made of iron coated with Cu is thick at the connection portion with the IC semiconductor chip 9021, but its cross-sectional area is smaller than the area of the IC semiconductor chip 9021.

  In the manufacture of the semiconductor device according to the present embodiment, the antenna member is inserted into a hole provided in the antenna support 9038 in a state where a large number of antennas 9032 are arranged two-dimensionally as shown in FIG. 29C. Here, the arrangement of the antennas is equal to the arrangement of the IC semiconductor chips 9031 formed on the Si wafer. FIG. 29B shows an LSI wafer 9035 on which an IC semiconductor chip 9021 is formed. The LSI wafer 9035 is bonded to a support sheet 9036 stretched on a predetermined sheet frame 9037, and each IC semiconductor chip is diced by dicing. Have been separated. FIG. 29D is a cross-sectional view showing a state where the LSI wafer of FIG. 29B and the antenna of FIG. 29C are arranged to face each other. Although the antenna 9032 passes through a hole provided in the antenna support 9090, the thick portion connected to the IC semiconductor chip has a diameter larger than that of the hole, so that the antenna does not fall out of the support. In this state, each antenna member is positioned so as to face the IC semiconductor chip 9031 bonded to the support sheet 9036. Next, the bump 9033 on the IC semiconductor chip and the antenna 9032 are connected by solder 9034 by a heating / pressurizing device not shown in the drawing. When the pressurization is completed after heating / pressurizing for a predetermined time, the IC semiconductor chip 9031 and the support sheet 9036 are peeled off by heat, and the IC semiconductor chip is separated from the support sheet and connected to the antenna. In the connection process described above, one surface of all the effective semiconductor chips on the support sheet is simultaneously connected to the antenna. Thereafter, antennas arranged in a two-dimensional manner are simultaneously connected to the other surface of the IC semiconductor chip. In this step, since it is necessary to align the antenna in the direction opposite to that shown in FIG. 29D, the antenna is prevented from falling off using a magnet parallel to the support.

  As described above, in this embodiment, since the cross-sectional area of the antenna 9032 is smaller than the area of the IC semiconductor chip 9031, a plurality of planar IC semiconductor chips formed on the Si wafer are simultaneously connected to the antenna. And has the advantage of a high manufacturing process throughput and low cost. Note that the structure shown in FIG. 29A of this embodiment can be used by being further embedded in a resin or other base material.

  If measures against counterfeiting of various token device media and the like are taken into consideration, it is considered that there is a technical added value as to whether the forgery method is easy. In the conventional example, it is stated that the metal pattern is encapsulated in various token device media, but this method not only facilitates the pattern creation method, but also has a risk of nearly recommending a forgery method. Yes. Anti-counterfeiting technology increases reliability at the same time as a mission to improve safety, so there is a risk that it will be completely no guard against advanced counterfeiting, and easy anti-counterfeiting technology increases counterfeiting It is necessary to think deeply that it has an action to make. In this case, although it is the technical level of metal pattern creation, since the detection technology is the presence or absence of metal, it is obvious that it can be clarified without opening a high level of technology if it is opened and examined precisely. That is, since the presence or absence of a metal pattern is a necessary condition, it is sufficiently possible to select the means for realizing it at a normal technical level. The present invention solves the above-mentioned problem by showing a means of using a semiconductor chip to prevent counterfeiting of various token device media, using an encryption technique, using a random number generation method, and realizing a practical structure economically. Can find the effect.

I think that it is necessary to further examine the mechanical strength and the strength of the semiconductor chip for paper. Considering a structure in which the structure of the conventional example has a thickness of 100 microns or less, how to catch the problem is completely different depending on whether there is any mechanical stress. In other words, mounting a semiconductor chip on a thin paper-like medium requires clarification of different constraints, and this is worth consciously clarifying with deep consideration, but it is consciously recognized in the conventional disclosure examples. Is lacking. It is necessary to consider the thickness and size of the semiconductor chip. For example, whether or not a 1 mm semiconductor chip can withstand a normal use level with a paper having a thickness of 100 microns requires whether it can withstand use, not whether it can be made structurally. According to the present invention, the effect of solving these problems can be obtained.
Since a semiconductor chip diced by a diamond blade is used around the semiconductor chip, if stress from the outside is applied to the semiconductor chip, cracks such as cracks occur when stress concentrates around the semiconductor chip. All functions are lost. When a semiconductor chip is encapsulated in a thin medium such as paper, the stress of bending or concentrated load is likely to be applied, so there is a problem that leads to destruction of the semiconductor chip even if there is slight chipping or chipping around the semiconductor chip. . Deep consideration from this point of view is not the conventional structure. According to the present invention, the effect of solving these problems can be obtained.
There are no considerations for having gold bumps and side effects on the anisotropic conductive adhesive or conductive adhesive around the semiconductor chip, that is, increase due to the presence of gold bumps in the vertical structure dimension, and short circuit around the semiconductor chip. As a result, there is a problem that prevents the structure of a semiconductor chip including thin gold bumps from obtaining a structure resistant to bending. According to the present invention, the effect of solving these problems can be obtained.

  The present invention is useful for preventing counterfeiting of paper or film-like media such as various token device media, securities, various cash vouchers, important documents, IC cards, prepaid cards and the like. Furthermore, it is possible to realize a batteryless non-contact recognition method using a semiconductor chip.

FIG. 1 shows an embodiment of the present invention. FIG. 2 shows an embodiment of the present invention. FIG. 3 is a view showing an embodiment of the present invention. FIG. 4 shows a conventional embodiment. FIG. 5 is a view showing an embodiment of the present invention. FIG. 6 shows an embodiment of the present invention. FIG. 7 shows a conventional embodiment. FIG. 8 shows an embodiment of the present invention. FIG. 9A is a plan view showing an embodiment of the present invention. FIG. 9B is a cross-sectional view showing an embodiment of the present invention. FIG. 10 shows an embodiment of the present invention. FIG. 11A is a diagram showing a waveform of an electromagnetic wave in the example of the present invention. FIG. 11B is a diagram showing a circuit block according to an embodiment of the present invention. FIG. 12 shows an embodiment of the present invention. FIG. 13 shows an embodiment of the present invention. FIG. 14 is a drawing showing an example of the state of the film roll of the present invention. FIG. 15A is a diagram showing a state in which semiconductor chips are dispersed in a film-like medium. FIG. 15B is a diagram showing a state in which the antenna is mounted on the semiconductor chip. FIG. 16 shows an embodiment of the present invention. FIG. 17 shows an embodiment of the present invention. FIG. 18 shows an embodiment of the present invention. FIG. 19 shows an example of the basis of the present invention. FIG. 20A is a plan view showing an embodiment of the present invention. 20B is a cross-sectional view corresponding to FIG. 20A. FIG. 21 shows an embodiment of the present invention. FIG. 22 is a sectional view showing an embodiment of the present invention. FIG. 23 is a plan view showing an embodiment of the present invention. FIG. 24 shows an embodiment of the present invention. FIG. 25 is a plan view showing an embodiment of the present invention. FIG. 26A is a plan view showing an embodiment of the present invention. FIG. 26B is a cross-sectional view of the embodiment of FIG. 26A. FIG. 27A is a plan view showing an embodiment of the present invention. FIG. 27B is a partial cross-sectional view of the semiconductor chip. FIG. 28A is a plan view of an embodiment of the present invention. FIG. 28B is a cross-sectional view of the embodiment of FIG. 28A. FIG. 28C is a plan view showing the antenna frame. FIG. 28D is a view of the antenna member and the LSI wafer as viewed from above. FIG. 28E is a cross-sectional view showing a state in which the antenna and the semiconductor chip are connected. FIG. 29A is a cross-sectional view illustrating an embodiment of the present invention. FIG. 29B is a plan view showing an LSI wafer. FIG. 29C is a plan view showing an antenna arrangement state. FIG. 29D is a cross-sectional view showing a state in which the LSI wafer and the antenna face each other.

Explanation of symbols

DESCRIPTION OF SYMBOLS 11 ... Semiconductor chip side wall oxide film, 12 ... Device layer silicon, 13 ... Pad, 14 ... Back surface oxide film, 15 ... Semiconductor chip side wall oxide film, 16 ... Adhesive resin, 17 ... Antenna wiring, 18 ... Substrate, 19 ... Conductive particle 19a ... conductive particles, 21 ... pad, 22 ... device layer silicon, 23 ... oxide layer, 24 ... silicon substrate, 25 ... support tape, 26 ... photoresist, 27 ... etching groove, 28 ... expanded support tape, 29 ... Gap, 30 ... Adhesive layer, 31 ... Pad, 32 ... Memory mat, 33 ... Read circuit, 34 ... Selector circuit, 35 ... Semiconductor chip side wall oxide film, 36 ... Transmission / reception circuit, 37 ... Through hole, 38 ... Power supply circuit, 39 ... Small pad for random number generation, 39a ... Random number generation circuit, 41 ... Chipping, 42 ... Crack, 43 ... Pad, 44 ... Semiconductor chip 45 ... adhesive resin, 46 ... conductive particles, 47 ... antenna wiring, 48 ... conductive particles, 49 ... substrate, 51 ... semiconductor chip, 52 ... antenna, 53 ... film-like medium, 55 ... antenna electrode 1 forming capacitance 56 ... Antenna electrode 2 for forming capacitance, 57 ... Antenna electrode 358 for forming capacitance ... Antenna electrode 4, 61 for forming capacitance ... Adhesive resin, 62 ... Backside oxide film, 63 ... Device silicon layer, 64 ... Side wall oxide film , 65 ... conductive particles, 66 ... surface oxide film, 67 ... conductive particles, 68 ... tungsten pad, 69 ... antenna wiring, 71 ... adhesive resin, 72 ... device silicon layer, 73 ... aluminum pad, 74 ... surface oxide film, 75 ... Conductive particles, 76 ... Gold pads, 77 ... Conductive particles, 78 ... Antenna wiring, 79 ... Insulator, 81 ... Media surface printed pattern, 82 ... Semiconductor chip DESCRIPTION OF SYMBOLS 83 ... Film-like medium, 91 ... Semiconductor chip, 92 ... Conductive particle, 93 ... Small pad, 94 ... Adhesive resin, 95 ... Antenna wiring, 96 ... Substrate, 97 ... Writable memory area, 111 ... Nth clock, 112 ... nth data, 113 ... n + 1th clock, 114 ... n + 1th data, 115 ... antenna, 116 ... rectifier, 117 ... ROM, 118 ... semiconductor chip, 119 ... counter, 119a ... selector, 121 ... first Semiconductor chip, 122 ... antenna, 123 ... second semiconductor chip, 124 ... film-like medium, 131 ... semiconductor chip, 132 ... encryption physical information entry column, 133 ... film-like medium, 141 ... first cover film roll, 142 ... Semiconductor chip, 143 ... Second cover film, 144 ... Second cover film roll DESCRIPTION OF SYMBOLS 145 ... 1st cover film, 146 ... Winding roll, 151 ... Semiconductor chip, 152 ... Film-like medium, 154 ... Antenna, 161 ... 1st antenna pad, 162 ... 2nd antenna pad, 163 ... Antenna coil, 164 ... first through hole, 165 ... second through hole, 171 ... tapered corner, 181 ... concentrated load tool, 182 ... film-like medium, 183 ... semiconductor chip, 184 ... silicon rubber, 185 ... steel plate 201 ... Braille projections, 202 ... Semiconductor chip, 203 ... Antenna, 204 ... Film-like medium, 211 ... First semiconductor chip, 212 ... First antenna, 213 ... Second semiconductor chip, 214 ... Second Antenna, 215... First encryption description area, 216... Second encryption description area, 217. 221 ... first cover film, 222 ... reinforcing metal, 223 ... semiconductor chip, 224 ... second cover film, 225 ... antenna pad, 226 ... antenna, 231 ... Japanese paper fiber, 232 ... semiconductor chip, 233 ... antenna, 234 ... Punching frame, 235 ... Punching net, 241 ... Device layer silicon, 242 ... Oxide film layer, 243 ... Substrate silicon wafer, 244 ... First support sheet, 245 ... Reinforcement metal, 246 ... Second support Sheet, 247 ... photoresist, 248 ... etching groove, 251 ... integer fold line, 252 ... semiconductor chip, 253 ... antenna, 9001 ... IC semiconductor chip, 9002 ... coil, 9003 ... wiring substrate, 9004 ... electrode bump, 9005 ... Anisotropic conductive adhesive, 9006 ... surface layer, 9007 ... resin layer, 9011 ... C semiconductor chip, 9012 ... antenna, 9013 ... bump, 9014 ... resin, 9021 ... IC semiconductor chip, 9022 ... antenna, 9023 ... bump, 9024 ... anisotropic conductive adhesive, 9025 ... antenna frame, 9026 ... wafer, 9027 ... Support sheet, 9028 ... seat frame, 9029 ... heating / pressurizing device, 9031 ... IC semiconductor chip, 9032 ... antenna, 9033 ... bump, 9034 ... solder, 9035 ... wafer, 9036 ... support sheet, 9037 ... seat frame, 9038 ... Antenna support.

Claims (18)

The plane dimension of the semiconductor chip is 0.5 mm or less on the long side,
The semiconductor chip is inserted in a film-like bent paper medium with an antenna,
Sending multiple bits of information through the antenna,
The semiconductor device, wherein the semiconductor chip is inserted into the paper medium together with paper fibers.   2. The semiconductor device according to claim 1, wherein the information is recorded by a pattern on the semiconductor chip formed by electron beam drawing. A semiconductor chip having a plane dimension of a long side of 0.5 mm or less and having memory for storing identification number information;
An antenna connected to the semiconductor chip and transmitting the information;
The semiconductor chip is inserted into a film-like bent paper medium,
The semiconductor device, wherein the semiconductor chip is encased in the paper medium together with paper fibers.   4. The semiconductor device according to claim 3, wherein the memory is a pattern on the semiconductor chip formed by electron beam drawing.   5. The semiconductor device according to claim 1, wherein one bit of the information is transmitted by changing a load on the antenna. The semiconductor chip has a counter;
The counter counts the leading edge of the signal applied to the antenna;
Depending on the output of the memory selected by the output of the counter,
5. The semiconductor device according to claim 3, wherein one bit of the information is transmitted by changing a load of the antenna.   The semiconductor device according to claim 1, wherein the semiconductor chip is separated by etching.   8. The semiconductor device according to claim 1, wherein the semiconductor chip is made of a silicon-on-insulator wafer.   9. The semiconductor device according to claim 1, wherein the semiconductor chip is formed with a thickness of 50 microns or less. The semiconductor chip has terminals,
The periphery of the semiconductor chip is formed of an insulating material,
The semiconductor device according to claim 1, wherein the antenna is connected to the terminal via a conductive adhesive.   The semiconductor device according to claim 1, wherein the antenna is formed on the semiconductor chip.   The semiconductor device according to claim 1, wherein the semiconductor chip includes a plurality of semiconductor chips. The paper medium has a fold,
The semiconductor device according to claim 1, wherein the semiconductor chip is not disposed at the fold position. The paper medium has a raised portion for Braille,
The semiconductor device according to claim 1, wherein the semiconductor chip is disposed in a Braille convex portion of the paper medium. The semiconductor device according to claim 6,
A semiconductor device, wherein data at an nth address of the memory is transmitted from a semiconductor chip by an nth clock of an amplitude-modulated signal applied to the antenna. A semiconductor chip having a plane dimension of a long side of 0.5 mm or less and having memory for storing identification number information;
An antenna connected to the semiconductor chip and transmitting the information;
A semiconductor device, wherein the semiconductor chip is inserted into paper that bends with an antenna.   4. The semiconductor device according to claim 1, wherein the semiconductor chip is arranged at a neutral surface of the paper medium or a position close to a neutral surface. 5. The paper medium has a convex part,
The semiconductor device according to claim 1, wherein the semiconductor chip is disposed in a convex portion of the paper medium.

Images