JP4583076B2 - 発光素子 - Google Patents
発光素子 Download PDFInfo
- Publication number
- JP4583076B2 JP4583076B2 JP2004173845A JP2004173845A JP4583076B2 JP 4583076 B2 JP4583076 B2 JP 4583076B2 JP 2004173845 A JP2004173845 A JP 2004173845A JP 2004173845 A JP2004173845 A JP 2004173845A JP 4583076 B2 JP4583076 B2 JP 4583076B2
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- phosphor
- light
- light emitting
- fine particles
- polymer
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
- C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
- C09K11/77—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals
- C09K11/7766—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals containing two or more rare earth metals
- C09K11/7774—Aluminates
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45144—Gold (Au) as principal constituent
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
- H01L2224/48465—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
- H01L2224/491—Disposition
- H01L2224/49105—Connecting at different heights
- H01L2224/49107—Connecting at different heights on the semiconductor or solid-state body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/42—Wire connectors; Manufacturing methods related thereto
- H01L24/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L24/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/12—Passive devices, e.g. 2 terminal devices
- H01L2924/1204—Optical Diode
- H01L2924/12041—LED
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/85—Packages
- H10H20/851—Wavelength conversion means
- H10H20/8511—Wavelength conversion means characterised by their material, e.g. binder
- H10H20/8512—Wavelength conversion materials
Landscapes
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Led Device Packages (AREA)
- Luminescent Compositions (AREA)
- Compounds Of Alkaline-Earth Elements, Aluminum Or Rare-Earth Metals (AREA)
Description
本実施の形態の発光素子は、図1に示したように、基板5と、基板5の中央に配置された青色発光ダイオード2と、青色発光ダイオード2を取り囲むように基板5上に搭載されたケース1と、ケース1内の空間に充填された例えばエポキシ等の樹脂8とを有する。樹脂8には、青色発光ダイオード2が発した青色光の一部を吸収し、黄色光を発する蛍光体10が分散されている。青色発光ダイオード2の発光主波長は、465nmである。基板5は樹脂製であり、基板5上には銅に銀メッキ処理を施すことにより形成された電極6,7が配置されている。電極6,7は、金線3,4により青色発光ダイオード2の電極端子と接合されている。ケース1は、反射率の高い樹脂で形成されており、青色発光ダイオード2が発した青色光及び蛍光体10が発した黄色光を反射し、樹脂8の上面から外部に出射するように構成されている。これにより、樹脂8の上面からは青色光と黄色光とが混合された白色光が発せられる。蛍光体10は、(Y、Gd)3Al5O12:Ceを用いている。これは、一般にYAG(ヤグ)として知られるY3Al5O12結晶のY原子の一部をGdで置換した構造であり、微量のCeがドープされたものである。
予めアルミ板に銀メッキ処理により電極6,7が形成された基板6に、反射率の高い樹脂で形成されたケース1を取り付け、ケース1の中心に発光主波長465nmの青色発光ダイオード2を固定して、金線3,4により電極6,7に接合した。
Claims (6)
- 所望の蛍光体の組成比となるように配合した原料を溶媒中に溶解して溶液を作製する工程と、
前記溶液に高分子材料を含有させることにより、ポリマー含有原料溶液を作製する工程と、
前記ポリマー含有原料溶液を所定の温度で加熱して所望の蛍光体の微粒子を生成する工程と、
前記蛍光体の微粒子を透明な樹脂中に分散する工程と、
前記透明な樹脂で発光ダイオードを覆う工程と、
を含む発光素子の製造方法。 - 前記所望の蛍光体は、(Y,Gd) 3 Al 5 O 12 :Ceであり、前記溶液は、硝酸イットリウム、硝酸ガドリニウム、硝酸アルミニウムおよび硝酸セリウムを含むことを特徴とする請求項1に記載の発光素子の製造方法。
- 前記溶媒は、水であることを特徴とする請求項1または2に記載の発光素子の製造方法。
- 前記高分子材料は、分子量400〜4,000,000の、ポリエチレングリコール、ポリビニルアルコール、ポリビニルピロリドン、デキストランおよびプルランのいずれかを含むことを特徴とする請求項1から3に記載の発光素子の製造方法。
- 前記ポリマー含有原料溶液の加熱の温度は、1000〜1500℃であることを特徴とする請求項1から4に記載の発光素子の製造方法。
- 前記蛍光体の微粒子は、一次粒子の流径が1μm以下の単結晶微粒子であり、前記透明な樹脂中に分散したときに粒径が5μm以上の二次粒子を形成することを特徴とする請求項1から5に記載の発光素子の製造方法。
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2004173845A JP4583076B2 (ja) | 2004-06-11 | 2004-06-11 | 発光素子 |
CNB2005100719307A CN100452451C (zh) | 2004-06-11 | 2005-05-23 | 发光元件 |
CN2008101340861A CN101334141B (zh) | 2004-06-11 | 2005-05-23 | 发光元件 |
US11/146,354 US7728508B2 (en) | 2004-06-11 | 2005-06-07 | Light emitting diode with fluorescent material |
DE102005026948A DE102005026948A1 (de) | 2004-06-11 | 2005-06-10 | Leuchtvorrichtung |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2004173845A JP4583076B2 (ja) | 2004-06-11 | 2004-06-11 | 発光素子 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2005353888A JP2005353888A (ja) | 2005-12-22 |
JP4583076B2 true JP4583076B2 (ja) | 2010-11-17 |
Family
ID=35460910
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2004173845A Expired - Fee Related JP4583076B2 (ja) | 2004-06-11 | 2004-06-11 | 発光素子 |
Country Status (4)
Country | Link |
---|---|
US (1) | US7728508B2 (ja) |
JP (1) | JP4583076B2 (ja) |
CN (2) | CN101334141B (ja) |
DE (1) | DE102005026948A1 (ja) |
Families Citing this family (20)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI286393B (en) * | 2004-03-24 | 2007-09-01 | Toshiba Lighting & Technology | Lighting apparatus |
JP4524607B2 (ja) * | 2004-10-26 | 2010-08-18 | 豊田合成株式会社 | 改善されたシリケート系蛍光体及びそれを用いたledランプ |
FR2901561B1 (fr) * | 2006-05-29 | 2012-06-15 | Pierre Dumoux | Substances transparentes ou translucides et photoluminescentes |
CN104882527B (zh) * | 2006-06-21 | 2018-05-15 | 亮锐控股有限公司 | 具有至少一种陶瓷球形颜色转换器材料的发光器件 |
US7902564B2 (en) * | 2006-12-22 | 2011-03-08 | Koninklijke Philips Electronics N.V. | Multi-grain luminescent ceramics for light emitting devices |
US20090173958A1 (en) * | 2008-01-04 | 2009-07-09 | Cree, Inc. | Light emitting devices with high efficiency phospor structures |
JP5179581B2 (ja) | 2008-06-17 | 2013-04-10 | パナソニック株式会社 | 表示装置及び表示装置の制御方法 |
JP5461910B2 (ja) * | 2009-07-24 | 2014-04-02 | 株式会社日立ハイテクノロジーズ | 微粒子の凝集抑制方法及び保存液 |
JP6393187B2 (ja) | 2011-08-16 | 2018-09-19 | 日東電工株式会社 | 蛍光体組成物およびその製造方法 |
KR101873221B1 (ko) | 2011-12-09 | 2018-07-06 | 삼성전자주식회사 | 형광체 및 발광장치 |
CN107180906B (zh) * | 2012-04-24 | 2021-05-28 | 株式会社光波 | 荧光体构件和发光装置 |
KR20140113046A (ko) * | 2013-03-15 | 2014-09-24 | 삼성디스플레이 주식회사 | 표시 장치 |
CN105684170B (zh) * | 2013-08-09 | 2019-09-03 | 株式会社光波 | 发光装置 |
JP6397282B2 (ja) * | 2013-09-11 | 2018-09-26 | 積水化学工業株式会社 | ランタノイド含有酸化物微粒子の製造方法 |
JP6955704B2 (ja) * | 2013-10-23 | 2021-10-27 | 株式会社光波 | 発光装置 |
JP6384893B2 (ja) * | 2013-10-23 | 2018-09-05 | 株式会社光波 | 単結晶蛍光体及び発光装置 |
JP6871665B2 (ja) | 2016-02-02 | 2021-05-12 | 株式会社タムラ製作所 | 蛍光体含有部材及びその製造方法、及び発光装置又はプロジェクター |
WO2017196779A1 (en) * | 2016-05-09 | 2017-11-16 | General Electric Company | Manganese-doped phosphor materials for high power density applications |
JP6428813B2 (ja) * | 2017-03-13 | 2018-11-28 | 信越化学工業株式会社 | 発光装置 |
US20200161506A1 (en) * | 2018-11-21 | 2020-05-21 | Osram Opto Semiconductors Gmbh | Method for Producing a Ceramic Converter Element, Ceramic Converter Element, and Optoelectronic Component |
Family Cites Families (22)
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JP2746861B2 (ja) * | 1995-11-20 | 1998-05-06 | 三井金属鉱業株式会社 | 酸化セリウム超微粒子の製造方法 |
DE19638667C2 (de) * | 1996-09-20 | 2001-05-17 | Osram Opto Semiconductors Gmbh | Mischfarbiges Licht abstrahlendes Halbleiterbauelement mit Lumineszenzkonversionselement |
KR100662955B1 (ko) * | 1996-06-26 | 2006-12-28 | 오스람 게젤샤프트 미트 베쉬랭크터 하프퉁 | 발광 변환 소자를 포함하는 발광 반도체 소자 |
TW383508B (en) | 1996-07-29 | 2000-03-01 | Nichia Kagaku Kogyo Kk | Light emitting device and display |
US6613247B1 (en) * | 1996-09-20 | 2003-09-02 | Osram Opto Semiconductors Gmbh | Wavelength-converting casting composition and white light-emitting semiconductor component |
JP3065263B2 (ja) | 1996-12-27 | 2000-07-17 | 日亜化学工業株式会社 | 発光装置及びそれを用いたled表示器 |
JP3797812B2 (ja) * | 1999-01-11 | 2006-07-19 | 日立マクセル株式会社 | 無機蛍光体およびその製造方法 |
JP2000230173A (ja) * | 1999-02-10 | 2000-08-22 | Matsushita Electric Ind Co Ltd | プラズマディスプレイ用蛍光体の製造方法、プラズマディスプレイパネルの製造方法およびプラズマディスプレイパネル |
JP2000297279A (ja) * | 1999-04-14 | 2000-10-24 | Matsushita Electric Ind Co Ltd | 蛍光体の製造方法、それを用いて製造した蛍光体、ならびに前記蛍光体を用いたデバイス、電子機器および蛍光体使用物品 |
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JP2001127346A (ja) | 1999-10-22 | 2001-05-11 | Stanley Electric Co Ltd | 発光ダイオード |
JP2001196639A (ja) | 2000-01-12 | 2001-07-19 | Sanyo Electric Co Ltd | Led発光素子及びその製造方法 |
JP2001210872A (ja) | 2000-01-26 | 2001-08-03 | Sanyo Electric Co Ltd | 半導体発光装置及びその製造方法 |
JP2001345483A (ja) | 2000-05-31 | 2001-12-14 | Toshiba Lighting & Technology Corp | 発光ダイオード |
JP2002267800A (ja) * | 2001-03-14 | 2002-09-18 | Fuji Photo Film Co Ltd | 放射線像変換パネルの蛍光体層塗布液の調製方法、および放射線像変換パネルの製造方法 |
TW595012B (en) * | 2001-09-03 | 2004-06-21 | Matsushita Electric Ind Co Ltd | Semiconductor light-emitting device, light-emitting apparatus and manufacturing method of semiconductor light-emitting device |
DE10223988A1 (de) * | 2002-05-29 | 2003-12-18 | Siemens Ag | Leuchtstoffpulver, Verfahren zum Herstellen des Leuchtstoffpulvers und Leuchtstoffkörper mit dem Leuchtstoffpulver |
JP3707688B2 (ja) | 2002-05-31 | 2005-10-19 | スタンレー電気株式会社 | 発光装置およびその製造方法 |
JP2004047748A (ja) * | 2002-07-12 | 2004-02-12 | Stanley Electric Co Ltd | 発光ダイオード |
JP2004115621A (ja) * | 2002-09-25 | 2004-04-15 | Nec Lighting Ltd | フッ化物蛍光材料、その製造方法およびその材料を用いた発光素子 |
JP2004162057A (ja) * | 2002-10-25 | 2004-06-10 | Mitsubishi Chemicals Corp | 蛍光体 |
JP3921545B2 (ja) * | 2004-03-12 | 2007-05-30 | 独立行政法人物質・材料研究機構 | 蛍光体とその製造方法 |
-
2004
- 2004-06-11 JP JP2004173845A patent/JP4583076B2/ja not_active Expired - Fee Related
-
2005
- 2005-05-23 CN CN2008101340861A patent/CN101334141B/zh not_active Expired - Fee Related
- 2005-05-23 CN CNB2005100719307A patent/CN100452451C/zh not_active Expired - Fee Related
- 2005-06-07 US US11/146,354 patent/US7728508B2/en active Active
- 2005-06-10 DE DE102005026948A patent/DE102005026948A1/de not_active Ceased
Also Published As
Publication number | Publication date |
---|---|
CN1707822A (zh) | 2005-12-14 |
JP2005353888A (ja) | 2005-12-22 |
CN100452451C (zh) | 2009-01-14 |
US20050276995A1 (en) | 2005-12-15 |
DE102005026948A1 (de) | 2006-03-23 |
CN101334141B (zh) | 2010-12-15 |
CN101334141A (zh) | 2008-12-31 |
US7728508B2 (en) | 2010-06-01 |
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