JP4549226B2 - Wafer with many crystal units formed - Google Patents

Description

The present invention relates to a wafer in which a large number of quartz resonators that perform AT-cut thickness-slip vibration used in a crystal oscillator mainly used in a transmission system apparatus in the communication field are formed .

          In the case of a crystal resonator that performs AT-cut thickness-slip vibration in which the vibration portion of the conventional quartz base plate thin plate and the reinforcement portion of the quartz base plate thick plate surrounding the quartz plate are integrated, unnecessary spurious vibration is generated. In order to avoid the occurrence, it has been common to make the vibration surface as large as possible with respect to the electrode surface.

          On the other hand, the recent trend is centered on transmission systems in the communications field, etc., and there is a very rapid demand for miniaturization and low profile from the market, as well as weight reduction and price reduction. It is expected that the size of the quartz crystal resonator piece will be 1 mm or less in accordance with the downsizing flow of such mounted parts.

Japanese Patent No. 3221609

          The applicant has not found any prior art documents related to the present invention other than the prior art documents specified by the prior art document information described above by the time of filing of the present application.

          However, the thickness of the vibrating portion of the vibrator is a very thin thin plate having a thickness of about 10 μm when the main vibration frequency is 150 MHz. It is also susceptible to slight mechanical distortion of the part, and the mechanical distortion changes the thickness of the thin plate of the vibration part described above, resulting in the generation of many unnecessary spurious vibrations other than the main vibration. Result.

          In view of the need for such fine processing that is very susceptible to external influences, the crystal resonator having such a shape is formed by etching processing, and as described above, the vibrating portion of the quartz base plate thin plate In general, a large number of crystal resonators each having a shape including a reinforcing portion of a quartz base plate thick plate surrounding the periphery thereof are patterned on a single wafer.

          Each crystal resonator in which a large number of crystal resonators are patterned on a single wafer is divided into each resonator by a dicing blade, such as a scriber, and then a crystal resonator container. Is housed in. Conventionally, this crystal unit is accommodated in a crystal unit container using a conductive adhesive as shown in FIG. 3 on a support base placed on the internal insulating substrate of the crystal unit container. A method of supporting the vibrator in a cantilever state has been taken.

          However, when a large number of crystal resonators patterned on the wafer are divided into the respective resonators, with the conventional lead electrode pattern, the lead electrodes connected to the main electrodes on the front and back of each crystal resonator are dicing blades. There is a problem that the electrical continuity may not be ensured.

          In addition, along with the downsizing process of the crystal unit described above, the size of the crystal unit piece is 1 mm or less, and it is expected that the handling method of the crystal unit will become more difficult. In the pattern of the lead-out electrode of the vibrator, there is a problem that the possibility of damage or loss during processing of the crystal vibrator may increase.

The present invention has been made based on the technical background as described above. Therefore, the object of the present invention is to provide a wafer on which a large number of crystal resonators with high work efficiency and high reliability are formed. Is to provide.

In order to achieve the above object, the present invention provides a reinforcement of a quartz base plate thick plate surrounding a vibrating portion of a quartz base plate thin plate and its periphery, in which a large number of crystal resonators are formed on a single wafer. In a wafer on which a large number of AT-cut thickness-sliding vibrations are integrally formed , the lead electrode pattern connected to one main electrode on the front and back of the crystal oscillator is A side surface is characterized in that it extends to the other main surface of the crystal resonator through a slit formed in the wafer with at least the lead electrode pattern width.

According to the wafer on which a large number of crystal resonators of the present invention are formed , the electrode patterns on the front and back sides of the crystal resonator ensure the conduction and do not divide the crystal resonators on a single wafer. When the resonator is formed, the crystal resonator base electrode deposition process can be performed in a batch at the same time, so the work efficiency of crystal resonator outline processing is significantly improved and the size is further reduced. Therefore, it is possible to manufacture a crystal resonator with higher reliability.

Further, according to the wafer in which a large number of crystal resonators of the present invention are formed , the slit width is sufficiently larger than the width of the dicing blade, and therefore, when the individual crystal resonators are divided, the lead electrode pattern material Therefore, there is a risk that the fine electrode material particles, which are chips of the above, are not generated, and therefore the fine electrode material particles described above may adhere to the vibration surface of the crystal unit and impair the reliability of the crystal unit. Can be significantly reduced.

Further, according to the wafer in which a large number of crystal resonators of the present invention are formed, since a large number of crystal resonators can be handled simultaneously in a state where a large number of crystal resonators are formed on a single wafer. , It is possible to eliminate the process of individually framing small pieces of crystal units one by one for the deposition of the base electrode, and as a result, the production efficiency of crystal units can be remarkably increased and the manufacturing cost can be reduced. I can do it.

Hereinafter, an embodiment of the present invention will be described with reference to the drawings.
In addition, the same code | symbol in each figure shall show the same object.

          FIG. 1 is a schematic top view of a crystal resonator 2 according to the present invention as viewed from above. That is, the lead electrode pattern 6 connected to the main electrodes 5 on the front and back sides of the crystal resonator 2 passes through the slit 9 formed at least with the lead electrode pattern width 8 on the side surface 7 of the crystal resonator. Connected to the surface. Further, the short side width 11 of the slit is 1.8 to 3 times the width of the dicing blade used when dividing a large number of crystal resonators 2 formed on one wafer 1. Therefore, in FIG. 1, the portions in the holes of the respective slits 9 are not actually visible from the upper surface, but the main electrodes on the front and back surfaces of the crystal unit 2 are extended over the side surfaces of the crystal units 2 of the respective slits. A lead electrode pattern 6 extending from 5 is formed. As described above, according to the crystal resonator 2 of the present invention, the slit 9 having a sufficiently large width with respect to the width of the dicing blade is provided when the crystal resonator 2 is divided. Therefore, there is no possibility that particles of fine electrode material, which are chips of the above, are generated, and thus the fine particles of electrode material adhere to the vibration surface 3 of the crystal resonator 2 and impair the reliability of the crystal resonator 2. There is an effect that there is no. Note that the front and back main electrodes 5 and the lead-out electrode pattern 6 on the crystal unit 2 are formed by vapor deposition or sputtering. Further, the lead electrode pattern 6 may be connected to one main surface of the crystal resonator 2 via the short side surface of the crystal resonator 2, and this case is also included in the technical scope of the present invention. Needless to say.

FIG. 2 is a schematic top view of the above-described wafer 1 as viewed from above, showing a large number of crystal resonators 2 of the present invention formed on a single wafer 1. According to the wafer 1 in which a large number of crystal resonators according to the present invention are formed, the crystal resonators 2 formed in a large number on a single wafer 1 ensure that the electrode patterns on the front and back surfaces are electrically connected to each other. Since the surface electrode deposition process of the quartz crystal resonator 2 can be performed collectively and simultaneously without dividing the crystal resonator 2 because it extends to the surface, the working efficiency of the external processing of the crystal resonator 2 is remarkably improved, and Further, it is possible to suppress the occurrence of the loss of the crystal unit 2 when the size is further reduced, and to manufacture the crystal unit 2 with higher reliability. In addition, in the state where a large number of crystal resonators 2 are formed on a single wafer 1, the characteristics of each crystal resonator 2 by probing can be measured with high work efficiency.

          FIG. 3 shows a pattern in which the conventional crystal unit 2 is placed on a support base provided on the bottom insulating substrate inside the crystal unit 2 container in a cantilevered state using a conductive adhesive. 3 is a schematic top perspective view of the crystal resonator 2 as viewed from the short side direction. FIG. That is, it shows an embodiment in which a single wafer 1 on which a large number of crystal resonators 2 are formed is divided and then stored in a crystal resonator 2 container.

          FIG. 4 is a schematic top schematic view of the wafer 1 as viewed from the top direction, showing a state in which a large number of conventional crystal resonators 2 are formed on a single wafer 1. Conventionally, it has been necessary to divide the wafer 1 into individual crystal pieces and load them individually on a mask or the like to form the front and back main electrodes 5 by vapor deposition.

1 is a schematic top view of a crystal resonator according to the present invention as viewed from above. FIG. 3 is a schematic top view schematically showing a wafer as viewed from above, showing a state in which a large number of crystal resonators of the present invention are formed on a single wafer. A short crystal resonator showing a pattern in which a conventional crystal resonator is cantilevered using a conductive adhesive on a support base provided on a bottom insulating substrate inside the crystal resonator container. It is a schematic top perspective view seen from the side direction. It is the general | schematic upper surface schematic diagram which looked at a wafer from the upper surface direction, and shows a mode that many conventional crystal oscillators are formed on one wafer.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 Wafer 2 Crystal oscillator 3 Crystal base plate thin plate vibration part 4 Crystal base plate thick plate reinforcement part 5 Main electrode 6 on the front and back 6 Leading electrode pattern 7 Crystal vibrator side face 8 Leading electrode pattern width 9 Slit 10 One side of the crystal oscillator Main surface 11 Short side width of slit

Claims (1)

Single and multiple on the wafer number of the crystal oscillator is formed, AT-cut thickness shear vibration vibration part of the quartz crystal substrate sheet and the reinforcing portion of the quartz crystal substrate slab surrounding the periphery thereof became integrated In a wafer on which a large number of the crystal resonators are formed ,

Routing electrode pattern connected to one main electrode of the front and back of the quartz oscillator, in the crystal oscillator side, mainly the other of the quartz oscillator through a portion of the slit formed in the wafer at least the lead-out electrode pattern width wafer said crystal resonator is a large number formed, characterized in that extending surface.

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