JP4537793B2 - Sensor unit and manufacturing method thereof - Google Patents

Description

  The present invention relates to a sensor unit, and more particularly to a sensor unit incorporating a sensor and an active element, and a method for easily manufacturing the sensor unit.

Conventionally, a sensor unit including an image sensor such as a CCD or CMOS, a sensor such as an acceleration sensor, and an active element that processes a signal from the sensor has been used for various applications. As such a sensor unit, for example, a sensor built-in module and an active element built-in module are mounted on a wiring board by using connection means such as wire bonding or metal bump, and these are protected by resin sealing. (Patent Document 1).
JP 2003-259169 A

However, in the conventional sensor unit as described above, since the sensor built-in module mounted on the wiring board is located in a part different from the mounting part of the active element built-in module, it is necessary to expand the surface direction of the wiring board. Met. For this reason, there was a limit to downsizing the sensor unit.
In addition, since the sensor built-in module and the active element built-in module are individually mounted on the wiring board, it is necessary to accurately align each module for mounting at a predetermined position on the wiring board, and the process management is complicated. In addition, when the mounting position is shifted, there is a problem that the reliability of the sensor unit is lowered.
In addition, the sensor may be exposed to high temperatures during mounting, which may cause deterioration in sensor characteristics and sensor unit reliability.
The present invention has been made in view of the above circumstances, and an object thereof is to provide a small and highly reliable sensor unit and a manufacturing method for easily manufacturing such a sensor unit. .

In order to achieve such an object, the sensor unit of the present invention comprises a protective material, a sensor built-in module, and an active element built-in module in this order, and the sensor surface of the sensor built-in module is the protective material. Provided in multiple stages so as to face each other, the protective material has a protective substrate and a concave portion on the surface of the protective substrate facing the sensor surface, and is disposed on a surface facing the sensor built-in module excluding the concave portion. The sensor built-in module includes a substrate, a sensor built in the substrate, and a plurality of front and back conductive vias penetrating the substrate in a region outside the sensor, and the front and back surfaces. conductive vias through metal bumps bonded to the wiring of the protective material, and, which the sensor is connected to the wiring of the protective material, the active The module with a built-in element has a substrate, an active element embedded in the substrate, and a plurality of front and back conductive vias penetrating the substrate in a region outside the active element, and connects the front and back conductive vias to the active element. Wiring was provided, and the front and back conductive vias were joined to the front and back conductive vias of the sensor built-in module via metal bumps .

As another aspect of the present invention, the module with a built-in active element is configured to have a solder bump on a surface opposite to a surface facing the module with a built-in sensor.
As another aspect of the present invention, the protection substrate is a glass substrate, and the substrate of the sensor built-in module and the active element built-in module is a silicon substrate.
As another aspect of the present invention, the thickness of the front and back conductive vias included in the sensor built-in module and the active element built-in module is in the range of 1 to 10 μm.
As another aspect of the present invention, a sealing resin layer is provided in at least one of a gap between the protective material and the sensor built-in module and a gap between the sensor built-in module and the active element built-in module. did.

The manufacturing method of the sensor unit of the present invention is the above-described manufacturing method of the sensor unit of the present invention, wherein the sensor built-in module module wafer is divided into multiple impositions, and a sensor is incorporated for each imposition, and the sensor A plurality of fine through holes are formed in the outer region of the sensor for each imposition of the wafer for the built-in module, and a conductive material is disposed in the fine through holes to form front and back conductive vias. Forming a multi-sided process, a recess for facing the sensor surface of the sensor, a connection bump and a bonding bump, and a wiring connected to the connection bump and the bonding bump on one surface of the protective substrate; And a plurality of the protective materials are arranged for each imposition on the sensor built-in surface side of the sensor built-in module wafer, And bonding the protective material for each imposition of the sensor built-in module wafer by connecting the sensor and the bonding bump and the front and back conductive vias, and one surface of the substrate An active element is built in, a plurality of fine through holes are formed in a region outside the active element, a conductive material is disposed in the fine through hole to form a front and back conductive via, and the front and back conductive vias, the active element, Forming an active element built-in module by forming a wiring for connecting a plurality of active element built-in modules, for each imposition on the opposite side of the sensor built-in surface of the sensor built-in module wafer, By connecting the front and back conductive vias of the sensor built-in module wafer and the front and back conductive vias of the active element built-in module via bonding bumps, the sensor built-in module window And a step of joining the wafer the active element built-in module on each side with each of the steps of dicing the multi with the wafer for sensor-module, and that have configure.
As another aspect of the present invention, the sensor built-in module wafer is a silicon wafer, and the sensor is fabricated on the silicon wafer for each imposition.

The sensor unit manufacturing method of the present invention is the above-described sensor unit manufacturing method of the present invention, wherein the sensor built-in module module wafer is partitioned into multiple surfaces, and a plurality of fine through holes are formed for each surface. Then, a conductive material is disposed in the fine through holes to form front and back conductive vias, and a recess is formed for each imposition of the sensor built-in module wafer, and a sensor chip is embedded and embedded in the recess. Forming a step , a recess for facing the sensor surface of the sensor, a connection bump and a bonding bump, and a wiring connected to the connection bump and the bonding bump on one surface of the protective substrate to form a protective material A plurality of the protective materials are arranged for each imposition on the sensor built-in surface side of the sensor built-in module wafer, the connection bumps and the sensor are connected, and the bonding Bonding the protective material for each imposition of the sensor built-in module wafer, and incorporating an active element on one surface of the substrate, A plurality of fine through holes are formed in the outer region, a conductive material is disposed in the fine through holes to form front and back conductive vias, and wiring for connecting the front and back conductive vias and the active element is formed to be active. A step of forming a module with a built-in element, and a plurality of modules with a built-in active element are arranged on each side of the sensor built-in module wafer on the opposite side of the sensor built-in surface, and the front and back conductive vias of the sensor built-in module wafer and active By joining the front and back conductive vias of the module with a built-in element via bonding bumps, the module with a built-in active element is provided for each imposition of the wafer for a module with a built-in sensor. And a step of joining Le, and a step of dicing the multi with the wafer for sensor-module, and that have configure.

Further, the sensor unit manufacturing method of the present invention is the above-described sensor unit manufacturing method of the present invention, wherein the protective substrate for the protective material is divided into a plurality of surfaces and is opposed to the sensor surface of the sensor for each surface imposition. Forming a recess, a connection bump and a bonding bump, and a wiring connected to the connection bump and the bonding bump on one surface of the protective substrate for the protective material, and a sensor chip, the protective substrate for the protective material A step of bonding the sensor and the bonding bump, a concave portion for incorporating the sensor in the substrate, and forming a plurality of fine through holes on the outside from the concave portion, A step of forming conductive vias in the fine through-holes to form front and back conductive vias, and a plurality of the substrates, each sensor chip being embedded in the recess, Placed in And joining the sensor built-in module for each imposition of the protective material protective substrate by bonding the bonding bumps of the protective material protective substrate and the front and back conductive vias, and one of the substrates An active element is built in the surface, a plurality of fine through holes are formed in a region outside the active element, and a conductive material is disposed in the fine through hole to form a front and back conductive via. The front and back conductive via and the active element Forming an active element built-in module by forming a wiring for connecting the active element built-in module, and arranging a plurality of the active element built-in modules on the substrate surface of the sensor built-in module, The step of bonding the module with a built-in active element for each imposition of the protective substrate for the protective material by bonding the front and back conductive vias of the built-in module through bonding bumps And a step of dicing the protective material for a protective substrate of the multi with a like having the configuration.

As another aspect of the present invention, a configuration is adopted in which bonding bumps are formed in advance on the bonding surfaces of the front and back conductive vias of the sensor built-in module and / or the front and back conductive vias of the active element built-in module.
As another aspect of the present invention, the substrate constituting the active element built-in module is a silicon substrate, and the active element is fabricated on a silicon substrate.
As another aspect of the present invention, the joining is a low-temperature joining.

  Such a sensor unit of the present invention does not include a wiring board, and the protective material and the active element built-in module are joined in multiple stages so as to sandwich the sensor built-in module. Both can be greatly downsized. In addition, it is possible to perform batch assembly that joins the sensor built-in module, the protective material, and the active element built-in module at the wafer level, facilitating process management and reducing manufacturing costs, and using low temperature bonding bumps. By joining, the influence of heat on the sensor can be prevented, and a highly reliable sensor unit can be manufactured.

Hereinafter, embodiments of the present invention will be described with reference to the drawings.
[Sensor unit]
FIG. 1 is a schematic cross-sectional view showing an embodiment of a sensor unit of the present invention. In FIG. 1, the sensor unit 11 of the present invention includes a sensor built-in module 21, a protective material 31 and an active element built-in module 41 that are joined in multiple stages so as to sandwich the sensor built-in module 21. Further, a sealing resin layer 51 is interposed in a gap between the sensor built-in module 21 and the protective material 31, and a sealing resin layer 52 is also interposed in a gap between the sensor built-in module 21 and the active element built-in module 41. Yes.

A sensor built-in module 21 constituting the sensor unit 11 of the present invention is provided on a substrate 22, a sensor 23 built in one surface 22 a of the substrate 22, and a substrate 22 in a region outside the sensor 23. A plurality of fine through holes 24 and front and back conductive vias 25 disposed in these fine through holes 24 are provided. The front and back conductive via 25 protrudes as a bonding bump 28 on the other surface 22b of the substrate 22 and is bonded to a front and back conductive via 45 of an active element built-in module 41 described later.
The sensor built into the sensor built-in module 21 is not particularly limited, and may be an image sensor such as a CCD or CMOS, or various MEMS (Micro Electromechanical System) sensors such as an acceleration sensor, a pressure sensor, or a gyro sensor.

The protective material 31 constituting the sensor unit 11 of the present invention includes a protective substrate 32, a concave portion 33 formed on one surface (a surface facing the sensor built-in module 21) 32 a of the protective substrate 32, and the concave portion 33. A desired wiring 36 formed on the surface 32a to be removed is provided. The recess 33 is for securing a desired gap between the sensor 23 and the sensor 23. The surface 32 a of the protective substrate 32 has a plurality of connection bumps 37 connected to each terminal (not shown) of the sensor 23 and a plurality of joints bonded to the front and back conductive vias 25 of the sensor built-in module 21. Bumps 38 are disposed, and these are connected to the wiring 36.
Further, the active element built-in module 41 constituting the sensor unit 11 of the present invention is built in the substrate 42 and one surface (the surface opposite to the surface facing the sensor built-in module 21) 42a of the substrate 42. The active element 43 includes a plurality of fine through holes 44 formed in the substrate 42 in a region outside the active element 43, and front and back conductive vias 45 disposed in the fine through holes 44. In addition, on the surface 42a of the substrate 42, wirings 46 connecting desired terminals (not shown) of the active elements 43 and desired front and back conductive vias are disposed. A solder bump 49 as an external terminal is disposed at a desired location of the wiring 46.

In the sensor unit 11 of the present invention as described above, the terminals of the sensor 23 are connected to the front and back conductive vias 25 through the connection bumps 37, the wirings 36, and the bonding bumps 38, and are further activated through the bonding bumps 28. It is connected to the front and back conductive vias 45 of the element built-in module 41, and is connected to a desired terminal of the active element 43 through the wiring 46.
The substrate 22 of the sensor built-in module 21 and the substrate 42 of the active element built-in module 41 have a thermal expansion coefficient in the XY direction (a plane parallel to the substrate surface) of 2 to 20 ppm, preferably 2.5 to 17 ppm. For example, a material such as silicon, ceramic, glass, glass-epoxy composite material, or the like can be used. The thicknesses of these substrates 22 and 42 can be set in the range of 50 to 400 μm, for example, in consideration of the built-in sensor, active element, substrate material, and the like.

Further, the protective substrate 32 of the protective material 31 preferably has a thermal expansion coefficient close to the above-described substrates 22 and 42 in the XY direction (a plane parallel to the substrate surface), and when transparency is required, For example, a material such as glass can be used. The thickness of the protective substrate 32 can be set, for example, in the range of 100 to 600 μm in consideration of the material, light transmittance, and the like. Further, the shape and size of the concave portion 33 of the protective substrate 32 can be appropriately set according to the characteristics, size, etc. of the sensor 23. For example, a gap of about 1 to 20 μm is generated between the surface of the sensor 23 and the sensor 23. Can be set.
The material of the wiring 36, the connection bump 37, and the bonding bump 38 included in the protective material 31 can be a conductive material such as copper, silver, gold, or tin. The connection bump 37 and the bonding bump 38 may have a height of about 5 to 30 μm and a thickness of about 5 to 100 μm, and the connection bump 37 and the bonding bump 38 may have the same shape or different shapes. .

The plurality of fine through holes 24 of the sensor built-in module 21 and the plurality of fine through holes 44 of the active element built-in module 41 have an opening diameter of about 1 to 50 μm, preferably about 5 to 30 μm. The shape of the fine through holes 24 and 44 is a straight shape having a substantially constant inner diameter in the thickness direction in the illustrated example, but is not limited to this, and one having a tapered shape with a wide opening diameter, substantially in the thickness direction. It may be a shape having an inner diameter that is narrow at the center.
The thickness of the front and back conductive vias 25 and 45 disposed in the fine through holes 24 and 44 as described above is about 1 to 50 μm, preferably about 5 to 30 μm. Such front and back conductive vias 25 and 45 may be filled in the fine through holes 24 and 44, and are formed on the inner wall surfaces of the front and back conductive vias 25 and 45 so that there are through holes. It may be anything.

The material of the front and back conductive vias 25, the bonding bumps 28, and the front and back conductive vias 45 and the wiring 46 provided in the active element built-in module 41 may be conductive materials such as copper, silver, gold, and tin. . The bonding bump 28 can have a height of about 5 to 30 μm and a thickness of about 5 to 100 μm.
In the present invention, an insulating layer may be provided on the inner wall surface of the fine through-holes 24, 44, and this insulating layer is a single layer film such as a silicon dioxide film, a silicon nitride film, a titanium nitride film, or the like. Moreover, the material of the sealing resin layers 51 and 52 is an organic material such as an epoxy resin, a benzocyclobutene resin, a cardo resin, a polyimide resin, or these organic materials. It can be a combination of glass fibers or the like. The thickness of the sealing resin layers 51 and 52 can be set in consideration of the dimensions of the bonding bumps 28 and 38 described above, and can be set in the range of 1 to 20 μm, for example.

Unlike the conventional sensor unit in which the sensor built-in module and the active element built-in module are individually mounted on the wiring board, the sensor unit 11 of the present invention as described above does not include the wiring board, and the sensor built-in module 21. Since the protective material 31 and the active element built-in module 41 are joined in a multi-stage state so as to sandwich them, the area can be reduced and the thickness can be reduced, and a significant reduction in size can be realized.
The sensor unit of the present invention is not limited to the above-described embodiment. For example, as shown in FIG. 2, the active element 43 is provided on the surface 42b on the sensor built-in module 21 side, and a wiring 46 is formed on the surface 42b, and a wiring for forming an external electrode is formed on the opposite surface 42a. An active element built-in module 41 ′ in which 48 and solder bumps 49 are formed may be provided. In FIG. 2, the same members as those in FIG. 1 are given the same member numbers.
In addition, the sensor unit of the present invention may not include one or both of the sealing resin layers 51 and 52 described above.

[Method for manufacturing sensor unit]
Next, a method for manufacturing the sensor unit of the present invention will be described using the sensor unit 11 shown in FIG. 1 as an example.
3 and 4 are process diagrams showing an embodiment of a method for producing a sensor unit of the present invention. First, the sensor built-in module wafer 22A is divided into multiple impositions, and a sensor 23 is produced for each imposition 1A (FIG. 3A). The sensor 23 uses, for example, a silicon wafer as the sensor built-in module wafer 22A, and the sensor 23 is manufactured on the silicon wafer by using a MEMS (Micro Electromechanical System) method or the like.

Next, a plurality of fine through holes 24 are formed in a region outside the sensor 23 for each imposition 1A of the sensor built-in module wafer 22A (FIG. 3B), and a conductive material is formed in these fine through holes 24. The front and back conductive vias 25 are arranged, and the joint bumps 28 projecting outside are connected to the front and back conductive vias 25 on the surface opposite to the sensor 23 built-in surface. Thus, the sensor built-in module 21 is formed with multiple faces (FIG. 3C).
The fine through hole 24 is formed, for example, by forming a mask pattern on the sensor built-in module wafer 22A and exposing the exposed sensor built-in module wafer 22A to ICP-RIE (Inductively) which is a dry etching method using plasma. It can be formed by a coupled plasma-reactive ion etching (inductively coupled plasma-reactive ion etching) method. Further, the fine through holes 24 can be formed by a sandblasting method, a wet etching method, or a femtosecond laser method. Further, a fine hole is formed in the sensor built-in module wafer 22A at a predetermined depth from the sensor built-in surface by any one of the methods described above, and then the opposite surface of the sensor built-in module wafer 22A is polished to be fine. The fine through hole 24 may be formed by exposing the hole.

The opening diameter of the fine through hole 24 can be set in the range of 1 to 50 μm, preferably 5 to 30 μm.
Further, the formation of the front and back conductive vias 25 in the fine through holes 24 is performed by, for example, forming a base conductive thin film in the fine through holes 24 by plasma CVD or the like, and then depositing a conductive metal by electrolytic field plating. Can be performed. Thereby, the front and back conductive vias 25 without voids can be obtained. Alternatively, the front and back conductive vias 25 can be formed by filling the fine through holes 24 with a conductive paste.

  The joint bump 28 can be formed so as to protrude from the surface opposite to the sensor 23 built-in surface simultaneously with the formation of the front and back conductive vias 25. Also, after forming the front and back conductive vias 25, a resist pattern is formed on the surface opposite to the sensor 23 built-in surface so that the front and back conductive vias 25 are exposed. It can also be formed. Further, the bonding bumps 28 can be formed by printing a conductive paste by a screen printing method or the like. The shape of the bonding bump 28 may be a conical shape, a cylindrical shape, etc., the thickness is about the same as that of the front and back conductive vias 25, and the height (projection amount) is preferably about 1 to 30 μm. .

  When the sensor built-in module wafer 22A is a silicon wafer, an insulating layer may be formed on a desired portion of the sensor built-in module wafer 22A, such as the inner wall surface of the fine through hole 24. This insulating layer can be formed as a single layer film such as a silicon dioxide film, a silicon nitride film, a titanium nitride film, or a desired two or more kinds of laminated films by using a vacuum film forming method such as a plasma CVD method. In addition, a silicon oxide precursor solution or an insulating resin such as a benzocyclobutene resin, a cardo resin, or a polyimide resin may be applied and thermally cured by a coating method.

  Next, the protective member 31 is produced by forming the recess 33, the wiring 36, the connection bump 37, and the bonding bump 38 on the protective substrate 32. Then, this protective material 31 is arranged for each imposition 1A (each sensor built-in module 21) on the sensor built-in surface side of the sensor built-in module wafer 22A, and connection bumps 37 and terminals (not shown) of the sensor 23 are provided. The connection bumps 38 and the front and back conductive vias 25 are bonded. Thereby, the protective material 31 is joined to the sensor built-in module at the wafer level (FIG. 4A). In addition, in order to avoid that drawing becomes complicated, the sealing resin layer 51 is not shown.

  The protective material 31 can be bonded to the sensor built-in module wafer 22A via the bonding bumps 38 by, for example, the SAB (Surface Active Bonding) method. That is, first, a resin composition film for a sealing resin layer is formed on the wiring 36 so that the connection bump 37 and the bonding bump 38 are exposed, and the exposed connection bump 37 and the bonding bump 38 are cleaned with argon plasma. To process. Next, alignment is performed so that the bonding bumps 38 are positioned on the front and back conductive vias 25, and bonding between the bonding bumps 38 and the front and back conductive vias 25 and connection bumps 37 and sensors are performed by low-temperature bonding at a temperature of 180 ° C. or lower. Connection with 23 terminals is performed. As described above, the SAB (Surface Active Bonding) method is a technique that facilitates connection by cleaning the metal surface with Ar plasma to activate the surface.

The concave portion 33 can be formed on the protective substrate 32 by forming a mask pattern on the protective substrate 32 and forming the exposed protective substrate 32 by the ICP-RIE method. Moreover, you may form the recessed part 33 by the sandblasting method etc.
The wiring 36 is formed by forming a base conductive thin film on the protective substrate 32 by an electroless plating method, a vacuum film forming method or the like, forming a desired insulating pattern on the base conductive thin film, and performing electrolytic plating using the base conductive thin film as a power feeding layer. Then, it can be formed by removing an unnecessary underlying conductive thin film.

  The connection bumps 37 and the bonding bumps 38 are formed with a resist pattern so that the wirings 36 where the connection bumps 37 and the bonding bumps 38 are formed are exposed after the wirings 36 are formed. The layer can be formed by electrolytic plating. Further, the connection bump 37 and the bonding bump 38 can be formed by printing a conductive paste by a screen printing method or the like. The shape of the connection bump 37 and the bonding bump 38 may be a conical shape, a cylindrical shape, or the like, and the thickness and height (projection amount) are set in the same range as the above-described bonding bump 28. Is preferred.

  Next, the active element 43 is built in one surface of the substrate 42, a plurality of fine through holes 44 are formed in a region outside the active element 43, and a conductive material is disposed in the fine through holes 44 so that the front and back sides are arranged. The conductive via 45 is formed, and the wiring 46 for connecting the front and back conductive via 45 and the active element 43 is formed to manufacture the active element built-in module 41. The active element built-in module 41 is arranged for each imposition 1A (each sensor built-in module 21) on the opposite side of the sensor built-in surface of the sensor built-in module wafer 22A. Join. Thereafter, solder bumps 49 as external electrodes are formed at desired portions of the wiring 46. Thus, the active element built-in module 41 is joined to the sensor built-in module at the wafer level (FIG. 4B). Note that the sealing resin layer 52 is not shown in order to avoid complicated drawings.

The bonding of the active element built-in module 41 to the sensor built-in module wafer 22A via the bonding bump 28 is similar to the bonding of the protective material 31 to the sensor built-in module wafer 22A via the bonding bump 38 described above. (Surface Active Bonding) can be performed by low-temperature bonding at a temperature of 180 ° C. or less.
For example, a silicon wafer is used as the substrate 42, and the active element can be manufactured on the silicon wafer by a known method.
The fine through hole 44 and the front / back conductive via 45 can be formed in the same manner as the fine through hole 24 and the front / back conductive via 25, and the wiring 46 can be formed in the same manner as the wiring 36 described above. Can be done.
Next, the sensor unit 11 is obtained by dicing the multi-sided sensor built-in module wafer 22A (FIG. 4C).

Next, another embodiment of the sensor unit manufacturing method of the present invention will be described.
5 and 6 are process diagrams showing another embodiment of the sensor unit manufacturing method of the present invention. First, the sensor built-in module wafer 22A is divided into multiple impositions, and for each imposition 1A, a plurality of fine through-holes 24 are formed in a region outside the area where the sensor chip is embedded in a subsequent process. A conductive material is disposed in the through-hole 24 to form a front / back conductive via 25, and a joint bump 28 protruding outside is connected to the front / back conductive via 25 on the surface opposite to the surface where the sensor chip is embedded (see FIG. 5 (A)). The formation of the fine through hole 24, the front and back conductive via 25, and the formation of the bonding bump 28 can be the same as those in the embodiment of the manufacturing method described above. When the sensor built-in module wafer 22A is a silicon wafer, an insulating layer may be formed on a desired portion of the sensor built-in module wafer 22A, such as the inner wall surface of the fine through hole 24. This insulating layer can be formed in the same manner as in the embodiment of the manufacturing method described above. Further, a silicon dioxide film can be formed on the surface of the sensor built-in module wafer 22 </ b> A including the inner wall surface of the fine through-hole 24 by thermal oxidation to form an insulating layer.

  Next, for each imposition 1A of the sensor built-in module wafer 22A, a recess 26 for embedding the sensor chip is formed (FIG. 5B). The recess 26 can be formed by, for example, an ICP-RIE method on the exposed sensor built-in module wafer 22A by forming a mask pattern on the sensor built-in module wafer 22A. It can also be formed by sandblasting, wet etching, or the like. The shape and size of the recess 26 can be appropriately set according to the shape and size of the sensor chip to be embedded.

Next, the sensor chip 23 is embedded in the recess 26. Thereby, the sensor built-in module 21 is formed with multiple faces (FIG. 5C). As shown in the figure, the sensor chip 23 may be embedded by either a method of fixing using the adhesive 27 or a method of fitting the sensor chip 23 into the recess 26.
Next, as in the above-described embodiment (see FIG. 4A), the protective material 31 is bonded to the sensor built-in module at the wafer level (FIG. 6A). This bonding is also a low-temperature bonding at a temperature of 180 ° C. or lower. In addition, in order to avoid that drawing becomes complicated, the sealing resin layer 51 is not shown.

Thereafter, as in the above-described embodiment (see FIG. 4B), the active element built-in module 41 is bonded to the sensor built-in module at the wafer level (FIG. 6B). This bonding is also a low-temperature bonding at a temperature of 180 ° C. or lower. Note that the sealing resin layer 52 is not shown in order to avoid complicated drawings.
Next, the sensor unit 11 is obtained by dicing the multi-sided sensor built-in module wafer 22A (FIG. 6C).

Next, another embodiment of the sensor unit manufacturing method of the present invention will be described.
7 and 8 are process diagrams showing another embodiment of the sensor unit manufacturing method of the present invention. First, the protective substrate 32A for the protective material is divided into multiple impositions, and the recess 33, the wiring 36, the connection bump 37, and the bonding bump 38 are formed for each imposition 1A, and the multiple imposition protective material is formed. 31 is manufactured (FIG. 7A).
The concave portion 33 for each imposition 1A of the protective substrate 32A can be formed by ICP-RIE method on the exposed protective substrate 32 by forming a mask pattern on the protective substrate 32A. Moreover, you may form the recessed part 33 by the sandblasting method etc.
For the wiring 36, a base conductive thin film is formed on the protective substrate 32A by an electroless plating method, a vacuum film forming method, etc., a desired insulating pattern is formed on the base conductive thin film, and electrolysis is performed using the base conductive thin film as a power feeding layer. It can be formed by plating and then removing an unnecessary underlying conductive thin film.

The connection bumps 37 and the bonding bumps 38 are formed with a resist pattern so that the wirings 36 where the connection bumps 37 and the bonding bumps 38 are formed are exposed after the wirings 36 are formed. The layer can be formed by electrolytic plating. Further, the connection bump 37 and the bonding bump 38 can be formed by printing a conductive paste by a screen printing method or the like.
Next, the terminals (not shown) of the sensor chip 23 are joined to the connection bumps 37 of the protective material 31 for each imposition 1A (FIG. 7B). This bonding is also a low-temperature bonding at a temperature of 180 ° C. or lower.

On the other hand, on the sensor built-in module wafer, a plurality of fine through holes 24 are formed in a region outside a portion where the sensor chip 23 is embedded in a later process, and a conductive material is disposed in these fine through holes 24 so that the front and back sides thereof A conductive bump 25 is provided on the surface opposite to the surface where the sensor chip is embedded, and a bonding bump 28 protruding outside is connected to the front and back conductive vias 25, and a recess 26 for embedding the sensor chip 23 is further provided. Form. Thereafter, the substrate 22 for the sensor built-in module is manufactured by dicing (FIG. 7C). The formation of the fine through holes 24, the front and back conductive vias 25, the formation of the bonding bumps 28, and the formation of the recesses 26 can be performed in the same manner as in the above-described manufacturing method.
Next, the sensor built-in module substrate 22 is arranged for each imposition 1A so that the sensor chip 23 is embedded in the recess 26, and the bonding bump 38 and the front and back conductive vias 25 are bonded. Thus, the sensor built-in module 21 is bonded to the protective material 31 at the wafer level (FIG. 8A). As shown in the figure, the sensor chip 23 may be embedded by either a method of fixing using the adhesive 27 or a method of fitting the sensor chip 23 into the recess 26. The bonding between the bonding bumps 38 and the front and back conductive vias 25 is also a low-temperature bonding at a temperature of 180 ° C. or lower. In addition, in order to avoid that drawing becomes complicated, the sealing resin layer 51 is not shown.

Thereafter, as in the above-described embodiment (see FIG. 4B), the active element built-in module 41 is joined to the sensor built-in module 21 at the wafer level (FIG. 8B). This bonding is also a low-temperature bonding at a temperature of 180 ° C. or lower. Note that the sealing resin layer 52 is not shown in order to avoid complicated drawings.
Next, the sensor unit 11 is obtained by dicing the protective substrate 32A for the multi-face protective material (FIG. 8C).

The sensor unit manufacturing method of the present invention as described above enables batch assembly in which the sensor built-in module, the protective material, and the active element built-in module are joined at the wafer level, which facilitates process management and reduces manufacturing costs. Is possible. Further, the low-temperature bonding using the bonding bumps can prevent the influence of heat on the sensor, and a highly reliable sensor unit can be manufactured.
In addition, the manufacturing method of the above-mentioned sensor unit of this invention is an illustration, and this invention is not limited to these embodiment. For example, the bonding bump 28 and the bonding bump 38 may be provided on any member to be bonded. Alternatively, a sensor unit may be manufactured by joining a multi-sided active element built-in module and a multi-sided protective material to the sensor built-in module, and then dicing three layers.

Next, the present invention will be described in more detail with specific examples.
[Example 1]
(Production of sensor built-in module (multi-sided))
A silicon wafer with a thickness of 625 μm was prepared as a sensor built-in module module wafer, and was divided into multiple faces with a square having a side of 5 mm. The thermal expansion coefficient of the above silicon wafer in the XY direction (a plane parallel to the surface of the silicon wafer) was 3 ppm.
Next, for each imposition of the silicon wafer, a sensor (4000 μm × 4000 μm) was produced by a conventional method, and then back grinding was performed from the back surface of the silicon wafer to a thickness of 200 μm.

Next, a silicon nitride film (thickness 5 μm) was formed on the surface opposite to the sensor built-in surface by plasma CVD. Next, a positive photoresist (OFPR-800 manufactured by Tokyo Ohka Kogyo Co., Ltd.) is applied to the entire surface of the silicon nitride film, and exposed and developed through a photomask for forming fine through holes, thereby forming a resist pattern. Formed. Next, the silicon nitride film exposed from the resist pattern was dry-etched using CF ₄ as an etching gas, and then the resist pattern was peeled off to form a mask pattern made of silicon nitride. In the mask pattern, 100 circular openings each having a diameter of 10 μm were formed in a region outside the sensor at a pitch of 100 μm for each imposition.

Next, a silicon oxide film (thickness 5 μm) was formed on the silicon wafer on the sensor built-in surface side by plasma CVD. On this silicon oxide film, a resist pattern having an opening corresponding to the circular opening of the mask pattern made of the silicon nitride film was formed by photolithography, and an aluminum thin film was formed by sputtering. Thereafter, an aluminum pad was formed on the silicon oxide film by removing the resist pattern.
Next, the silicon wafer exposed from the mask pattern on the surface opposite to the sensor-embedded surface is dry-etched with an ICP-RIE apparatus using SF ₆ as an etching gas, and further oxidized with an aluminum pad on the surface. The through hole was formed by etching the silicon film. The through hole had a tapered shape with one opening diameter of 15 μm and the other opening diameter of 10 μm.

  Next, the mask pattern was removed from the core material using acetone. Thereafter, a silicon nitride film was formed by plasma CVD in the fine through hole and on the silicon wafer, and further a titanium nitride film was formed by MOCVD to form an insulating film. This insulating film was 2 μm on the silicon wafer surface and 1 μm on the inner wall surface of the fine through hole.

Thereafter, a base conductive thin film having a thickness of 0.3 μm was formed from one surface of the silicon wafer (the side opposite to the sensor-incorporated surface) by sputtering in the order of titanium-copper. Next, a dry film resist (APR manufactured by Asahi Kasei Co., Ltd.) was laminated on the underlying conductive thin film. Next, the resist pattern (thickness 15 μm) was formed by exposure and development through a photomask for forming front and back conductive vias. Using this resist pattern as a mask, electrolytic copper plating is performed using the above-mentioned underlying conductive thin film as a power supply layer, filling the inside of the fine through-hole, and bonding bumps protruding from the silicon wafer surface (the side opposite to the sensor formation surface) ( 5 μm in height and 30 μm in diameter). The bump formation in the electrolytic copper plating at this time was controlled by adjusting the plating time and the current density.
Next, the resist pattern and the underlying conductive thin film were removed, and a sensor built-in module was formed with multiple faces.

(Production and bonding of protective material)
Moreover, the glass substrate for protective materials was prepared and it divided into the multi-sided with the square which is 5 mm of sides. A photosensitive dry film resist (BF405 manufactured by Tokyo Ohka Kogyo Co., Ltd.) was laminated on one surface of this glass substrate, and a mask pattern was formed by exposing and developing through a photomask for forming recesses. The thermal expansion coefficient in the XY direction (a plane parallel to the surface of the glass substrate) of the glass substrate was 4 ppm. In addition, the mask pattern had a square opening with a side of 4 mm formed at the center of each imposition.
Next, a concave portion was formed on the glass substrate by sand blasting using this mask pattern as a mask. The recess had a square shape with an opening of 4 mm on a side and a depth of 50 μm.

  Next, a conductive layer made of titanium and copper was formed on the concave surface side of the glass substrate by sputtering, and a photosensitive dry film resist (BF405 manufactured by Tokyo Ohka Kogyo Co., Ltd.) was laminated on the conductive layer. Next, an insulating pattern for wiring formation was formed by exposure and development through a photomask for wiring formation. Using this insulating pattern as a mask, electrolytic copper plating (thickness: 5 μm) was performed to form a wiring, and then the insulating pattern was removed. Next, a photosensitive dry film resist (BF405 manufactured by Tokyo Ohka Kogyo Co., Ltd.) was laminated so as to cover the wiring. Next, exposure and development were performed through a photomask for forming connection bumps and bonding bumps to form an insulating pattern for bump formation. Using this insulating pattern as a mask, electrolytic copper plating (thickness: 10 μm) was performed using the conductive layer as a power feeding layer to form connection bumps and bonding bumps (height: 10 μm, diameter: 30 μm) at desired portions of the wiring. Thereafter, the insulating pattern and the conductive layer were removed.

  A resin composition for a sealing resin layer (MP-7400 manufactured by Nitto Denko Corporation) is applied to the surface on which the connection bumps and the bonding bumps of the protective material produced as described above are formed, and cured and sealed. A stop resin layer was obtained. After that, the connection bumps and bonding bumps protruding at a height of about 10 μm are cleaned with argon plasma, and then placed on the sensor built-in side of the silicon wafer for the sensor built-in module for each imposition. Then, low temperature bonding (bonding temperature: 170 ° C.) was performed using WB2000 manufactured by Toray Engineering Co., Ltd. Thereby, the connection bumps of the protective material and the terminals of the sensor were connected, the bonding bumps of the protective material and the front and back conductive vias were bonded, and the protective material was bonded to the sensor built-in module at the wafer level.

(Manufacture and bonding of active element built-in modules)
A silicon wafer having a thickness of 625 μm was prepared as a substrate for a module with a built-in active element, and was divided into multiple faces with a square having a side of 5 mm. The thermal expansion coefficient of the above silicon wafer in the XY direction (a plane parallel to the surface of the silicon wafer) was 3 ppm.
Next, an active element (4000 μm × 4000 μm) was produced by a conventional method for each imposition of the wafer, and then back-grinded from the back surface of the silicon wafer to a thickness of 200 μm.

Next, a silicon nitride film (thickness 5 μm) was formed on the surface opposite to the active element built-in surface by plasma CVD. Next, a positive photoresist (OFPR-800 manufactured by Tokyo Ohka Kogyo Co., Ltd.) is applied to the entire surface of the silicon nitride film, and exposed and developed through a photomask for forming fine through holes, thereby forming a resist pattern. Formed. Next, the silicon nitride film exposed from the resist pattern was dry-etched using CF ₄ as an etching gas, and then the resist pattern was peeled off to form a mask pattern made of silicon nitride. In the above mask pattern, 200 circular openings having a diameter of 10 μm were formed in a region outside the sensor at a pitch of 50 μm for each imposition.

  Next, a silicon oxide film (thickness 5 μm) was formed on the silicon wafer opposite to the active element built-in surface by plasma CVD. On this silicon oxide film, a resist pattern having an opening at a position corresponding to the circular opening of the mask pattern made of the silicon nitride film was formed by photolithography. Next, an aluminum thin film was formed by sputtering. Thereafter, an aluminum pad was formed on the silicon oxide film by removing the resist pattern.

Next, the silicon wafer exposed from the mask pattern on the active element built-in surface was dry-etched with an ICP-RIE apparatus using SF ₆ as an etching gas to form fine holes reaching the surface silicon oxide film. . The fine holes had a tip diameter of 10 μm and an opening diameter of 15 μm. Next, a silicon oxide film (thickness: 5 μm) was formed by MOCVD from the opposite side of the sensor built-in surface, and a silicon oxide film was also formed on the inner wall surface of the fine hole. Next, the silicon oxide film located at the innermost part of the fine hole was removed by dry etching using SF ₆ as an etching gas with an ICP-RIE apparatus. Thereby, the above-mentioned aluminum pad was exposed in the innermost part of the fine hole. Thereafter, a copper thin film having a thickness of 0.2 μm was formed by sputtering from one surface of the silicon wafer (active element built-in surface) to form a base conductive thin film. Next, a dry film resist (APR manufactured by Asahi Kasei Co., Ltd.) was laminated on the underlying conductive thin film. Next, the resist pattern (thickness 15 μm) was formed by exposure and development through a photomask for forming front and back conductive vias. Using this resist pattern as a mask, electrolytic copper plating was performed using the above-mentioned underlying conductive thin film as a power feeding layer to fill the inside of the fine holes, and wiring was formed on the silicon wafer surface (active element built-in surface). The electrolytic copper plating filled in the fine holes was connected to the aluminum pad at the deepest part of the fine holes, and constituted front and back conductive vias.

Next, the resist pattern and the underlying conductive thin film were removed, and a silicon wafer having a square active element built-in module with a side of 5 mm in multiple faces was obtained.
Next, the active element built-in module is placed on each side of the silicon wafer for the sensor built-in module on the opposite side of the sensor built-in surface, and low temperature bonding (joining temperature 170 ° C.) is performed using WB2000 manufactured by Toray Engineering Co., Ltd. I did it. The resin composition for the sealing resin layer (MP-7400 manufactured by Nitto Denko Corporation) is applied to the surface on which the bonding bumps of the silicon wafer for the sensor built-in module are formed, and cured. A sealing resin layer was obtained. Thereafter, the bonding bumps protruding at a height of about 5 μm were previously cleaned with argon plasma. As a result, the bonding bumps of the silicon wafer for the sensor built-in module and the front and back conductive vias of the active element built-in module were joined, and the active element built-in module was joined to the sensor built-in module at the wafer level.
(Dicing)

  Next, the silicon wafer for the multi-sided sensor built-in module, the silicon wafer for the active element built-in module, and the glass substrate for the protective material were diced to obtain the sensor unit of the present invention. This sensor unit had a size of 5 mm × 5 mm and a height of 1 mm.

[Example 2]
(Production of sensor built-in module (multi-sided))
A silicon wafer with a thickness of 625 μm was prepared as a sensor built-in module module wafer, and was divided into multiple faces with a square having a side of 5 mm. The thermal expansion coefficient of this silicon wafer in the XY direction (a plane parallel to the surface of the silicon wafer) was 3 ppm.

Next, a silicon nitride film (thickness 5 μm) is formed on this silicon wafer by plasma CVD, and a positive photoresist (OFPR-800 manufactured by Tokyo Ohka Kogyo Co., Ltd.) is applied to form a photo for forming fine through holes. A resist pattern was formed by exposure and development through a mask. Next, the silicon nitride film exposed from the resist pattern was dry-etched using CF ₄ as an etching gas, and then the resist pattern was peeled off to form a mask pattern made of silicon nitride. In the mask pattern, 100 circular openings each having a diameter of 10 μm were formed at a pitch of 100 μm for each imposition, and were formed in a region outside a recess forming portion for embedding a sensor chip described later.

Next, the silicon wafer exposed from the mask pattern was dry-etched using SF ₆ as an etching gas with an ICP-RIE apparatus to form a through hole. This through hole had a tapered shape with one opening diameter of 50 μm and the other opening diameter of 40 μm.
Next, the mask pattern is removed from the core material using acetone, the silicon wafer is subjected to a thermal oxidation process (1050 ° C., 60 minutes), and the silicon wafer surface including the inner wall surface of the fine through hole is made of a silicon dioxide film. A layer was formed. Thereafter, a silicon nitride film was formed in the fine through hole and on the silicon wafer by plasma CVD, and further a titanium nitride film (thickness 30 nm) was formed by MOCVD to form an insulating film. This insulating film was 1 μm on the silicon wafer surface and 1 μm on the inner wall surface of the fine through hole.

  Thereafter, a base conductive thin film having a thickness of 0.3 μm was formed by sputtering from one surface of the silicon wafer (the side opposite to the sensor built-in surface described later) in the order of titanium-copper. Next, a dry film resist (APR manufactured by Asahi Kasei Co., Ltd.) was laminated on the underlying conductive thin film. Next, the resist pattern (thickness 15 μm) was formed by exposure and development through a photomask for forming front and back conductive vias. Using this resist pattern as a mask, electrolytic copper plating is performed using the above-mentioned underlying conductive thin film as a power supply layer, filling the inside of the fine through-hole, and bonding bumps (height 15 μm, diameter 60 μm) protruding from the silicon wafer surface Formed. The bump formation in the electrolytic copper plating at this time was controlled by adjusting the plating time and the current density.

Next, a photosensitive dry film resist (BF405 manufactured by Tokyo Ohka Kogyo Co., Ltd.) is laminated on one surface of the silicon wafer (the surface on which no bonding bumps are formed), and exposed through a photomask for forming recesses. A mask pattern was formed by development. The mask pattern was a multi-sided pattern in which square openings with sides of 5 mm were formed at a pitch of 5 mm.
Next, a concave portion was formed in the silicon wafer by sand blasting using this mask pattern as a mask. The recess was a square with an opening of 4 mm on a side and a depth of 50 μm.
Next, a sensor chip (5 mm × 5 mm, thickness 200 μm) was disposed in the recess using an adhesive (Ablestick 3230, manufactured by Able Stick Co., Ltd.). As a result, the sensor built-in module was formed with multiple faces.

(Production and bonding of protective material)
A protective material was produced in the same manner as in Example 1, and this protective material was joined to the sensor built-in module at the wafer level in the same manner as in Example 1.

(Manufacture and bonding of active element built-in modules)
Next, an active element built-in module was produced in the same manner as in Example 1, and this active element built-in module was joined to the sensor built-in module at the wafer level in the same manner as in Example 1.

(Dicing)
Next, the silicon wafer for the multi-sided sensor built-in module, the silicon wafer for the active element built-in module, and the glass substrate for the protective material were diced to obtain the sensor unit of the present invention. This sensor unit had a size of 5 mm × 5 mm and a height of 0.7 mm.

  The present invention can be applied in various fields where a small and highly reliable sensor unit is required.

It is a schematic sectional drawing which shows one Embodiment of the sensor unit of this invention. It is a schematic sectional drawing which shows other embodiment of the sensor unit of this invention. It is process drawing which shows one Embodiment of the manufacturing method of the sensor unit of this invention. It is process drawing which shows one Embodiment of the manufacturing method of the sensor unit of this invention. It is process drawing which shows other embodiment of the manufacturing method of the sensor unit of this invention. It is process drawing which shows other embodiment of the manufacturing method of the sensor unit of this invention. It is process drawing which shows other embodiment of the manufacturing method of the sensor unit of this invention. It is process drawing which shows other embodiment of the manufacturing method of the sensor unit of this invention.

Explanation of symbols

DESCRIPTION OF SYMBOLS 11 ... Sensor unit 21 ... Sensor built-in module 22 ... Board | substrate 22A ... Sensor built-in module wafer 23 ... Sensor 24 ... Fine through-hole 25 ... Front and back conduction via 28 ... Bond bump 31 ... Protective material 32 ... Protective substrate 32A ... Protection for protective material Substrate 36 ... Wiring 37 ... Connection bump 38 ... Bond bump 41 ... Active element built-in module 42 ... Substrate 43 ... Active element 44 ... Fine through hole 45 ... Front / back conductive via 46 ... Wiring

Claims (12)

A protective material, a module with a built-in sensor, and a module with a built-in active element are provided in this order, and in a multistage state so that the sensor surface of the module with a built-in sensor faces the protective material,
The protective material includes a protective substrate and a recess provided on a surface of the protective substrate facing the sensor surface, and wiring disposed on the surface facing the sensor built-in module excluding the recess .
The sensor built-in module has a substrate, a sensor built in the substrate, and a plurality of front and back conductive vias penetrating the substrate in a region outside the sensor, and the front and back conductive vias are interposed via metal bumps. Bonded to the protective material wiring, and the sensor is connected to the protective material wiring,
The module with a built-in active element has a substrate, an active element built in the substrate, and a plurality of front and back conductive vias penetrating the substrate in a region outside the active element. A sensor unit having wiring to be connected, wherein the front and back conductive vias are joined to the front and back conductive vias of the sensor built-in module via metal bumps . The sensor unit according to claim 1 , wherein the active element built-in module includes a solder bump on a surface opposite to a surface facing the sensor built-in module. 3. The sensor unit according to claim 1, wherein the protective substrate is a glass substrate, and the substrate of the module with a built-in sensor and the module with a built-in active element is a silicon substrate. Sensor unit according to any of claims 1 to 3, wherein the sensor-module and the thickness of the front and back conductive via said active element built-in module is provided in the range of 1 to 10 [mu] m. The protective material and the sensor-module and gap portion, and the claims 1 to 4, characterized in that it comprises a sealing resin layer on at least one of the sensor-module and the active element built-in module and the gap portion of the The sensor unit according to any one of the above. In the manufacturing method of the sensor unit according to any one of claims 1 to 5,
Dividing the sensor built-in module module wafer into multiple impositions and incorporating sensors for each imposition; and
Built-in sensor by forming a plurality of fine through holes in the outer area of the sensor for each imposition of the sensor built-in module wafer, and arranging a conductive material in the fine through holes to form front and back conductive vias. Forming a module with multiple faces;
A step of forming a recess for facing the sensor surface of the sensor, a connection bump and a bonding bump, and a wiring connected to the connection bump and the bonding bump on one surface of the protective substrate to form a protective material;
A plurality of the protective materials are arranged for each imposition on the sensor built-in surface side of the sensor built-in module wafer, connect the connection bump and the sensor, and join the joining bump and the front and back conductive vias. By bonding the protective material for each imposition of the sensor built-in module wafer,
An active element is built in one surface of the substrate, a plurality of fine through holes are formed in a region outside the active element, and a conductive material is disposed in the fine through hole to form a front / back conductive via, and the front / back conductive via Forming a wiring for connecting the active element and the active element to form a module with a built-in active element;
A plurality of the active element built-in modules are arranged for each imposition on the opposite side of the sensor built-in surface of the sensor built-in module wafer, and the front and back conducting vias of the sensor built-in module wafer and the front and back conducting vias of the active element built-in module Bonding the active element built-in module for each imposition of the sensor built-in module wafer by bonding through the bonding bump;
Dicing a wafer for a sensor-embedded module having multiple surfaces, and a method for manufacturing a sensor unit. The sensor unit manufacturing method according to claim 6 , wherein the sensor built-in module wafer is a silicon wafer, and the sensor is manufactured on the silicon wafer for each imposition. In the manufacturing method of the sensor unit according to any one of claims 1 to 5,
Dividing the sensor built-in module module wafer into multiple impositions, forming a plurality of fine through holes for each imposition, disposing a conductive material in the fine through holes to form front and back conductive vias;
Forming a recess for each imposition of the sensor built-in module wafer, and embedding a sensor chip embedded in the recess; and
Forming a recess for facing the sensor surface of the sensor, a connection bump and a bonding bump, and a wiring connected to the connection bump and the bonding bump on one surface of the protective substrate to form a protective material;
A plurality of the protective materials are arranged for each imposition on the sensor built-in surface side of the sensor built-in module wafer, connect the connection bump and the sensor, and join the joining bump and the front and back conductive vias. By bonding the protective material for each imposition of the sensor built-in module wafer,
An active element is built in one surface of the substrate, a plurality of fine through holes are formed in a region outside the active element, and a conductive material is disposed in the fine through hole to form a front / back conductive via, and the front / back conductive via Forming a wiring for connecting the active element and the active element to form a module with a built-in active element;
A plurality of the active element built-in modules are arranged for each imposition on the opposite side of the sensor built-in surface of the sensor built-in module wafer, and the front and back conducting vias of the sensor built-in module wafer and the front and back conducting vias of the active element built-in module Bonding the active element built-in module for each imposition of the sensor built-in module wafer by bonding through the bonding bump;
Dicing a wafer for a sensor-embedded module having multiple surfaces, and a method for manufacturing a sensor unit. In the manufacturing method of the sensor unit according to any one of claims 1 to 5,
The protective substrate protective material is divided into multi with, protection and recess for facing the sensor surface of the sensor to each surface with a connection bumps and the bonding bumps, the connection bump, and a wiring connected to the bonding bumps Forming on one surface of the protective substrate for materials ,
A sensor chip is disposed for each imposition on the wiring forming surface side of the protective substrate for the protective material, and a step of bonding the sensor and the bonding bump;
Forming a concave portion for incorporating a sensor in the substrate, forming a plurality of fine through holes on the outside from the concave portion, disposing a conductive material in the fine through holes to form front and back conductive vias;
A plurality of the substrates are arranged for each imposition of the protective substrate for the protective material so that the sensor chip is embedded in the recess, and the bonding bumps and the front and back conduction of the protective substrate for the protective material Bonding the sensor built-in module for each imposition of the protective material protective substrate by bonding vias; and
An active element is built in one surface of the substrate, a plurality of fine through holes are formed in a region outside the active element, and a conductive material is disposed in the fine through hole to form a front / back conductive via, and the front / back conductive via Forming a wiring for connecting the active element and the active element to form a module with a built-in active element;
A plurality of the active element built-in modules are arranged on the substrate surface of the sensor built-in module, and the front and back conduction vias of the sensor built-in module and the front and back conduction vias of the active element built-in module are joined via bonding bumps, thereby protecting the protection. Bonding the active element built-in module for each imposition of the protective substrate for materials;
And a step of dicing the protective substrate for multi-sided protective material. Method for producing a sensor unit according to claims 6 to 9 to the joining surfaces of the front and back conductive via the front and back conductive vias and / or active elements built-in module of the sensor-module, and forming a pre-bonded bump. Wherein a silicon substrate board which constitutes the active element built-in module, manufacturing of the sensor unit according to any of claims 6 to 10, wherein the active element is one produced on a silicon substrate Method. The bonding method of the sensor unit according to any of claims 6 to 11, characterized in that a cold junction.

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