JP4537603B2 - Manufacturing method of semiconductor device - Google Patents

Description

[0001]
BACKGROUND OF THE INVENTION
  The present invention provides a semiconductorThe present invention relates to an apparatus manufacturing method, and more particularly to a technique for performing exposure and development by removing a thin film formed on an alignment mark.
[0002]
[Prior art]
In the semiconductor lithography process, deterioration of alignment accuracy during exposure has been a problem. The main cause of this problem is that the resist is formed asymmetrically due to the unevenness of the base. As methods for solving this problem, Japanese Patent Application Laid-Open Nos. 62-252136, 63-117421, and 2-298017 disclose means for processing a resist film as a photosensitive film with a laser. .
[0003]
However, in recent years, with the introduction of chemical mechanical polishing (CMP), the processed surface (mainly SiO₂The film) is being flattened, and the above-mentioned problems are solved. However, when a resist film is formed on this substrate and patterning is performed, there has been a problem that pattern degradation due to standing waves occurs. The standing wave is generated when the exposure light that penetrates the resist film interferes with the incident light in the resist film and the reflected light that returns through the oxide film and strikes the reflective surface such as metal or polysilicon. . Therefore, in order to prevent a standing wave generated in the resist film, an antireflection film for suppressing reflection of exposure light from the base has been used under the resist film. However, since the antireflection film is formed, it has become difficult to observe alignment marks necessary for detecting pattern position information on the substrate to be processed at the time of exposure. In particular, in alignment using a mask and a lens using exposure light as alignment light, which is being taken in to improve the accuracy of position information detection, there is a problem that the alignment mark cannot be seen at all due to the antireflection film. It was. A method of processing and removing this antireflection film with a laser is disclosed in Japanese Patent Application Laid-Open No. 2001-15407.
[0004]
The removal of the organic film by laser light is disclosed in JP-A-62-2252136, JP-A-63-117421, JP-A-2-298017, JP-A-5-3143, and JP-A-5-198496. There are many disclosed technologies such as Japanese Patent Laid-Open No. 7-161623 and Japanese Patent Laid-Open No. 10-113779. However, all of these techniques directly irradiate a film to be processed with laser light to vaporize an organic film. However, there is a problem in that foreign matter (an unburned residue of the organic film by the laser) generated at that time is scattered around the region to be processed, resulting in defective defects. In addition, there is a problem that the boundary of the processed part is swollen by the heat generated during laser processing.
[0005]
[Problems to be solved by the invention]
As described above, when the organic film or the inorganic film on the region including the alignment mark is removed by irradiation with an energy beam such as a laser beam, there is a problem that foreign matters are scattered around the removal region and a defect defect occurs. .
[0006]
An object of the present invention is to suppress damage in the vicinity of the energy beam irradiation region on the processed surface of the substrate to be processed, and to reduce the generation of scattered matter accompanying energy beam irradiation.
[0011]
[Means for Solving the Problems]
  A method of manufacturing a semiconductor device according to one embodiment of the present invention includes a step of forming a first thin film on a main surface of a substrate to be processed, which includes a semiconductor substrate and an alignment mark formed on the main surface of the semiconductor substrate. Irradiating the first thin film on the region including the alignment mark with a first energy beam to selectively remove a part of the first thin film; and Supplying a chemical solution containing a photosensitive substance and a solvent to form a coating liquid thin film on the first thin film, and removing the solvent contained in the coating liquid thin film to form a photosensitive thin film And carrying the substrate to be processed into a latent image forming means and irradiating the alignment mark with reference light through the region where the first thin film has been selectively removed to recognize the position of the mark; , Based on the position of the recognized alignment mark, Irradiating a predetermined position on the photosensitive thin film with a second energy beam to form a latent image on the photosensitive thin film; and at least one of the photosensitive thin films based on the latent image formed on the photosensitive thin film. A method of selectively removing a portion to form a photosensitive thin film pattern, wherein a liquid is applied to at least an irradiation region of the first energy beam when the first energy beam is irradiated. Supplying the liquid with at least one of ozone, oxygen, hydrogen, ammonia, carbon dioxide, and hydrogen chloride dissolved in pure water; oxidizing water, reducing water, alkaline water, acidic water Either one or an organic solvent is used.
[0012]
[Action]
The present invention has the following operations and effects by the above configuration.
By performing laser processing in the liquid, it is possible to process polyimide on the mark, the pad, and the fuse while suppressing generation of processing waste and irradiation damage.
[0013]
In addition, since the coating liquid thin film forming means and the coating thin film forming means for forming a coating film such as a resist film and an SOG film are connected to the laser processing apparatus via a transfer device, the formation of the coating film in-line Since laser processing can be performed, the manufacturing time can be shortened.
[0014]
DETAILED DESCRIPTION OF THE INVENTION
Embodiments of the present invention will be described below with reference to the drawings.
[0015]
[First Embodiment]
FIG. 1 is a block diagram showing an example of a schematic configuration of a pattern forming system according to the first embodiment of the present invention.
[0016]
As shown in FIG. 1, the pattern forming system 1 includes a film forming system 100 and a latent image forming system 120. In the film forming system 100, a substrate transfer machine 102 is connected to a carrier station 101 on which one or more substrates to be processed can be mounted. The substrate transporter 102 includes a first substrate temperature adjustment device 103, an antireflection chemical solution coating device 104a, a first solvent removal device 104b, a unit of the second substrate temperature adjustment device 105, and a spin coating type resist chemical solution. Coating device 106, 2 units of second solvent removing device 107, 1 unit of laser processing device 108, 1 unit of third substrate temperature control device 109, 3 units of heating device 110 for PEB process, 2 units of developing unit 111 is connected.
[0017]
In the film forming system 100 in FIG. 1, the portion surrounded by a dotted line portion in the narrow sense is the film forming system, and the PEB process heating device 110 and the developing unit 111 are the configuration of the pattern forming system. A process heating apparatus 110 and an etching apparatus 112 are included in the film forming system.
[0018]
The latent image forming system 120 is connected to the substrate transfer machine 102 as a separate configuration from the film forming system 100. The latent image forming system 120 uses a projection exposure apparatus that uses an ArF excimer laser (193 nm) as an exposure light source and transfers a mask image onto a substrate through an exposure mask.
[0019]
Next, the configuration of the laser processing apparatus 108 will be described. FIG. 2 is a diagram showing the configuration of the laser processing apparatus according to the first embodiment of the present invention.
[0020]
As shown in FIG. 2, the laser processing apparatus 108 includes a laser oscillator 202 and a holder 207 that holds a substrate to be processed 210 and stores a liquid that immerses at least the laser light irradiation region of the processing surface of the substrate to be processed 210. It is configured with at least.
[0021]
The laser processing apparatus 108 further moves relatively between a laser oscillator control unit 203 for controlling the laser oscillator 202, an optical system 204, an observation system 205, and a laser beam and a processing surface of a processing object. And a scanning system 206 to be configured.
[0022]
In this apparatus, a Q-Switch Nd YAG laser is used for the laser oscillator 202. The laser oscillator 202 irradiates a laser beam 202a having a wavelength of any one of a fundamental wave (wavelength 1064 nm), a second harmonic (wavelength 532 nm), a third harmonic (wavelength 355 nm), and a fourth harmonic (wavelength 266 nm). Is possible. Furthermore, the pulse width of the laser beam 202a irradiated from the laser oscillator 202 is set to about 10 nsec, and the laser beam irradiation region has a side of 10 μm to 500 μm (range from 10 μm × 10 μm to 500 μm × 500 μm) by a slit mechanism (not shown). In addition, the laser oscillation frequency of the laser oscillator 202 is set to 10 kHz, and the laser oscillation control unit 203 controls the oscillation of the laser beam 202a of the laser oscillator 202 and the irradiation area. It is done by.
[0023]
Laser light 202 a emitted from the laser oscillator 202 sequentially passes through each of the optical system 204, the observation system 205, and the scanning system 206, and is applied to the processing surface of the substrate 210 to be processed. The observation system 205 includes at least a half mirror 205a that extracts laser light 202a from the optical axis, and an observation camera 205b that observes the laser light extracted by the half mirror 205a. This observation system 205 can be used to adjust the alignment of the laser light irradiation position.
[0024]
The scanning system 206 moves the irradiation position of the laser beam 202a on the processing surface 210a of the substrate 210 to be processed, or scans the laser beam 202a continuously, and scanning that drives and controls the scanning mirror 206a. And at least a control unit 206b. That is, in this laser processing apparatus 108, the irradiation position of the laser beam is changed by the scanning mirror 206a of the scanning system 206. Furthermore, a condenser lens 220 is provided between the scanning mirror 206a and the substrate to be processed 210 so that the laser beam 202a is incident substantially perpendicularly to the processing surface 210a of the substrate to be processed.
[0025]
The holder 207 has a shape like a tray in which a dam for storing the liquid 208 is disposed in the peripheral portion. A stage 211 on which a substrate to be processed 210 can be placed and held is installed in the central portion. The substrate to be processed 210 is rotated by a wafer rotation mechanism 221 connected to the stage 211, and the rotation angle of the rotation of the substrate to be processed 210 is controlled by a sensor 222 and a rotation control mechanism 223. In the present invention, the rotation mechanism is connected to the drive control device, and the irradiation position of the laser beam is changed by moving the holder in the horizontal direction and the vertical direction. In the present invention, it is possible to reduce the size of the laser processing system by reducing the size of the condenser lens 220 and the rotation angle of the scanning mirror 206a by the rotation mechanism.
[0026]
Note that the planar shape of the holder 207 can be changed as appropriate in accordance with the shape of the substrate to be processed. For example, when placing a disk-shaped workpiece substrate such as a semiconductor wafer, a planar circular holder can be used. Further, when a rectangular workpiece such as a quartz glass substrate or a printed wiring board used in a liquid crystal display device is placed, a planar rectangular holder can be used. Of course, a disk-shaped workpiece substrate such as a semiconductor wafer may be placed on a flat rectangular holder.
[0027]
  The holder 207 further covers a substrate to be processed and a liquid that immerses at least the processed surface thereof, and is a window 207 that is transparent to laser light.aIt has. The laser beam 202a oscillated from the laser oscillator 202 passes through each of the window 207a and the liquid 208 and is irradiated onto the processing surface 210a of the substrate 210 to be processed. window207aIs a function to prevent water spraying during laser processing of the liquid 208 stored in the holder 207,UpwardAt least a function of preventing dust and the like from adhering to the surface of the substrate 210 to be processed.
[0028]
The liquid 208 can take away the heat generated by the laser light irradiation in the vicinity of the laser light irradiation region on the processing surface 210a of the substrate to be processed 210, and can further reduce the momentum of the evaporant generated by the laser light irradiation. It can be done. As the liquid, pure water or an aqueous ammonia solution can be used practically. Basically, the laser light irradiation region of the processing surface 210a of the substrate to be processed 210 only needs to be immersed in the liquid, but in order to remove a lot of heat and further reduce the momentum of the evaporated material, The entire substrate is immersed in the liquid.
[0029]
Further, the laser processing device 108 includes a liquid flow device 209 for flowing the liquid 208 stored in the holder 207. The liquid flow device 209 is basically a pump, and is connected to the holder 207 through the inflow pipe 209a and the outflow pipe 209b to circulate the fluid 208. In other words, the fluid fluidizer 209 causes the liquid 208 stored in the holder 207 to have a flow so that bubbles generated in the laser light irradiation region can be continuously removed by laser light irradiation, and further, the fluid flower 209 is insensitive to the laser light. The liquid can be circulated at a constant flow rate in a constant direction so as not to cause regular disturbance. The fluid flow device 209 may be driven at least when laser processing is actually performed.
[0030]
Further, the present apparatus includes a piezoelectric element 270 disposed on the back surface of the holder 207 and a piezoelectric element drive control circuit 271 that controls driving of the piezoelectric element 270. The piezoelectric element 270 can apply ultrasonic vibration to the liquid 208 in at least the processing surface 210a of the substrate 210 to be processed to remove bubbles generated by laser light irradiation.
[0031]
Next, a method for forming a semiconductor device using the film forming system 100 and the latent image forming system 120 described above will be described. FIG. 3 shows the flow of the substrate to be processed being transferred by the substrate transfer machine 102. 4 to 6 are process cross-sectional views for explaining the manufacturing process of the semiconductor device.
[0032]
In the present embodiment, a case where laser processing is performed after the resist film is formed and water is used as a liquid used for laser irradiation will be described.
[0033]
First, a carrier storing a 12-inch (φ300 mm) substrate to be processed 210 in the process of forming a semiconductor device is mounted on the carrier station 101. As shown in FIG. 4A, the substrate 210 to be processed is formed by embedding 40 alignment marks 302 and 20 alignment accuracy measurement marks (not shown) in a groove formed in the semiconductor substrate 301. Yes. A pattern 303 such as a wiring is formed on the semiconductor substrate 301, and an insulating film 304 whose surface is flattened so as to cover the pattern 303 is formed. A substrate to be processed 210 is transferred from the carrier station 101 to the first substrate temperature control apparatus 103 by the substrate transfer machine 102. The substrate to be processed 210 is adjusted to a predetermined temperature by the first substrate temperature adjusting device 103. The to-be-processed substrate 210 whose temperature has been adjusted is transported to the antireflection chemical solution coating apparatus 104a.
[0034]
In the antireflection chemical solution coating apparatus 104a, a chemical solution containing an antireflection film material is rotated while being supplied onto the insulating film 304 on the main surface of the substrate to be processed, so that the main surface of the substrate to be processed has a certain thickness including the antireflection material. A liquid film is formed. At this time, the film thickness of the liquid film was 60 nm, and the amount of the solvent relative to the solid content was about 10%. Next, as shown in FIG. 4B, the substrate to be processed 210 is transported to the first solvent removing device 104b, and the substrate to be processed 210 is heated to remove the remaining solvent in the liquid film. An antireflection film 305 having a thickness of 56 nm is formed on 304. Next, the substrate to be processed 210 is transferred to the second substrate temperature adjusting device 105 and cooled.
[0035]
Next, the substrate to be processed 210 cooled by the second substrate temperature adjusting device 105 is transported to the resist chemical solution coating device 106. In the resist chemical solution coating apparatus 106, while rotating the substrate to be processed, a resist solvent containing ethyl lactate as a main component was dropped on the antireflection film and spread by centrifugal force to form a uniform resist solution film of 500 nm. Next, as shown in FIG. 4C, the substrate to be processed 210 is transported to the second solvent removing apparatus 107 and heated to remove the solvent remaining in the resist solution film, and a resist film having a film thickness of 400 nm. 306 is formed.
[0036]
The substrate 210 to be processed, on which the resist film 306 was formed, was transferred to the laser processing apparatus 108. In the laser processing apparatus 108, the substrate to be processed is mounted on the stage 211 in the holder 207. While slowly rotating the substrate to be processed 210, pure water was stored in the holder 207 by the fluid flow device 209 and supplied to the main surface of the substrate. At this time, ultrasonic waves were applied to the liquid 208 by the piezoelectric element 270.
[0037]
  The observation system 205 detects the notch of the substrate 210 to be processed, recognizes rough coordinates, and registers an image of the observation camera (CCD camera) 205b installed on the upper surface of the substrate and a region including the alignment mark acquired in advance. The position of the alignment mark on the substrate is recognized by comparing with the image template that has been formed, and the laser beam 202a is irradiated based on the recognition information. Laser processing is performed at an irradiation time of about 500 msec per location.YesThe resist film 306 on the alignment accuracy measurement mark portion and the antireflection film 305 therebelow are removed.(Fig. 4 (d)). Processing of all marks could be completed in 50 seconds on the entire surface of the substrate to be processed 210.
[0038]
As a result of observing the resist film after laser processing, defects such as voids, dislocations, and bulges did not occur. Further, no scattered matter was observed in the vicinity of the laser irradiation region.
[0039]
This processing time is shorter than the processing time per sheet in the latent image forming system, and is a value set in advance based on the processing time of the latent image forming apparatus. This is a time obtained as a result of automatically adjusting the laser output and the number of pulses per pulse of the laser processing apparatus so that this time is reached.
[0040]
By making the processing time in the laser processing apparatus 108 shorter than the processing time of the latent image forming system, before the processing in the latent image forming system is finished, a substrate to be processed to be newly processed with respect to the latent image forming system is obtained. Since it can be prepared, the overall throughput does not change.
[0041]
Next, after the water 208 stored in the holder 207 is discharged, the surface water is roughly removed by rotating the substrate 210 to be processed at a high speed. Thereafter, the substrate to be processed 210 was further transported to the second solvent removal apparatus 107 and heated. The heating temperature of the substrate to be processed 210 was 200 ° C. Here, the substrate to be processed 210 is heated in order to remove the adsorbed water on the surface of the resist film 306 and make the exposure environment the same on the entire surface of the resist film. When this treatment is not performed, the acid generated by exposure moves due to the water remaining slightly in the film at the portion in contact with water, resulting in a pattern defect.
[0042]
Next, the substrate to be processed 210 was transferred inline from the film forming system 100 to the latent image forming system 120 using the substrate transfer device 102.
[0043]
In the latent image forming system 120, first, as shown in FIG. 5E, the alignment mark 302 of the substrate 210 to be processed is detected by the alignment detector using the reference light 307 having the same wavelength as the exposure wavelength. At this time, since the antireflection film 305 on the alignment mark 302 was removed, a good detection intensity was obtained. Note that the alignment mark 302 could not be detected at all when the antireflection film 305 on the alignment mark 302 was not removed as in the prior art.
[0044]
Based on the position information obtained by the aligner, as shown in FIG. 5 (f), the exposed portion 306 a of the resist film 306 was exposed to form a latent image on the resist film 306. After the latent image forming step, the substrate to be processed 210 was transported to the PEB process heating device 110, and the substrate to be processed was heated (PEB). The heat treatment was performed in order to perform an acid catalytic reaction of the resist (chemical amplification resist) used.
[0045]
After the heat treatment, as shown in FIG. 5G, the substrate to be processed 210 is transported to the developing unit 111 and the resist film 306 is developed to form a resist pattern 309. The alignment accuracy of the formed resist pattern 309 was ± 5 nm or less.
[0046]
Next, the substrate is recovered from the pattern forming system, conveyed to the etching apparatus 112, and the insulating film 304 is etched using the resist pattern 309 as a mask. Here, as shown in FIG. 7, when the region where the resist film 306 and the antireflection film 305 are removed by laser processing for observation of the alignment mark 302 becomes a problem in a later process (the mark is etched, Etc.). When such a problem occurs, the alignment film is selectively covered with a protective film 310 such as an organic film as shown in FIG. 6 (h) between the end of the exposure process and before the etching. To do. The protective film 310 is formed by selectively using a material having a high selection ratio in a resist film removal region in a later etching process. The selective application is performed by dropping a chemical solution from a discharge nozzle (for example, an injection needle).
[0047]
Then, as shown in FIG. 6I, the antireflection film 305 and the insulating film 304 are sequentially etched to form a groove. Thereafter, as shown in FIG. 6J, the protective film 310, the resist pattern 309, and the antireflection film are removed.
[0048]
As described above, in the present embodiment, by causing a liquid to flow in the laser irradiation region, damage in the vicinity of the laser light irradiation region can be suppressed, and generation of scattered matter due to energy beam irradiation can be reduced. be able to. Further, by providing the laser processing apparatus in the pattern forming system (film forming system), it is possible to reduce the time required for creating a product during laser processing.
[0049]
Furthermore, by mounting it in a pattern forming system (deposition of the laser processing means in this case) that includes film formation, latent image formation, and development (etching), the object can be achieved very effectively.
[0050]
The operation and effect of the present embodiment is as follows. In the case where a laser processing means is provided in an exposure apparatus as in JP-A-7-161623, a fluid liquid is supplied to a processing point of a substrate to be processed, or after processing. It is difficult to perform heating. On the other hand, if this laser processing means is installed alone, the laser processing must be performed in one batch process as described in JP-A-7-161623, and the time required for product production becomes enormous.
[0051]
In this embodiment, the ArF projection exposure apparatus is used in the latent image forming system, but the present invention is not limited to this. In the latent image forming system, not only an ArF projection exposure apparatus but also any latent image forming apparatus such as an apparatus having another exposure light source, an exposure electron beam exposure apparatus, an X-ray exposure apparatus, an EUV (Extreme Ultra Violet) exposure apparatus, etc. Can do.
[0052]
Further, the laser beam is irradiated to remove the resist film and the antireflection film, but the resist film and the antireflection film can be removed by using energy beams such as an ion beam and an electron beam in addition to the laser beam.
[0053]
In the present embodiment, an ultrasonic wave is applied to pure water as a liquid during laser processing. Ultrasound was used to make it easier for foreign objects to leave the substrate or film surface. Further, instead of simply using pure water, an oxidizing gas such as ozone or oxygen can be used for the purpose of removing foreign substances while oxidizing and decomposing them.
[0054]
If foreign matter is likely to be adsorbed on the resist film surface, laser processing may be performed using hydrogen water in which hydrogen is dissolved. In addition, acid water in which hydrogen chloride or the like is dissolved, alkaline water in which ammonia or the like is dissolved, or the like can be used in order to create an environment in which foreign substances are easily separated.
[0055]
In addition, as the liquid used at the time of laser processing, an organic solvent that does not damage the resist surface can be used. If the organic solvent is quick-drying and does not adsorb on the resist surface, the heat treatment in the subsequent step may not be performed.
[0056]
Further, in the present invention, the film transfer system to the latent image forming system (exposure device), and the space between the latent image forming system (exposure device) and the developing system are all carried out in a single-wafer system by mechanical conveyance. However, the present invention is not limited to this, and when the exposure apparatus is placed separately from the film forming system, it may be carried out by a batch method using several sheets by manual conveyance or mechanical conveyance.
[0057]
The configuration of the laser processing apparatus is not limited to the apparatus shown in FIG. 2, and any configuration may be used as long as the laser irradiation is performed while generating a liquid flow on the processing region surface of the substrate to be processed. .
[0058]
In this embodiment, the antireflection liquid film and the resist liquid film (coating liquid film) are formed by the spin coating method. However, while the chemical liquid is dropped on the surface of the substrate to be processed from the chemical liquid discharge nozzle, the nozzle and the substrate are relatively relative to each other. It may be formed by using a linear coating method or the like in which a liquid film is formed by moving the film. In this case, since the amount of the solvent in the liquid film is very large, it is preferable to use a decompression means instead of the heating means for removing the solvent. In this case, heating is preferably performed after removing the solvent by exposure to a reduced pressure near the saturated vapor pressure.
[0059]
(Second Embodiment)
The present embodiment relates to a case where an antireflection film is removed when a solution in which ozone is dissolved in pure water is used as a liquid used in laser irradiation.
[0060]
Since the configuration of the film forming system used in this embodiment is the same as that of the first embodiment, only the manufacturing process of the semiconductor device will be described. 8 to 10 are process cross-sectional views illustrating the manufacturing process of the semiconductor device according to the second embodiment of the present invention.
[0061]
First, a 12-inch (φ300 mm) substrate 210 in the process of forming a semiconductor device was mounted on the carrier station 101. As shown in FIG. 8A, the substrate 210 to be processed has 40 alignment marks 302 and 20 alignment accuracy measurement marks (not shown) embedded in grooves formed in the semiconductor substrate 301. Yes. A pattern 303 such as a wiring is formed on the semiconductor substrate 301, and an insulating film 304 whose surface is flattened so as to cover the pattern 303 is formed. The substrate to be processed 210 is unloaded from the carrier station 101 by the substrate transfer machine 102. The unloaded workpiece substrate 210 is inserted into the first substrate temperature adjusting device 103, and the substrate temperature is adjusted to a predetermined temperature. The to-be-processed substrate 210 whose temperature has been adjusted is transported to the antireflection chemical solution coating apparatus 104a.
[0062]
In the anti-reflective chemical solution coating apparatus 104a, the substrate is rotated while supplying the chemical solution containing the anti-reflective film material on the substrate 210 to be processed on the insulating film 304 on the main surface of the substrate 210 to be processed. Is formed. At this time, the film thickness of the liquid film was 60 nm, and the amount of the solvent relative to the solid content was about 10%. Next, as shown in FIG. 8B, the substrate to be processed is transported to the first solvent removing device 104b, and the remaining solvent in the liquid film is removed to form an antireflection film 305 having a thickness of 56 nm. . Next, the substrate to be processed 210 was transferred to the second substrate temperature control device 105 and cooled.
[0063]
The substrate with the antireflection film formed on the main surface was further transported to the laser processing means shown in FIG.
[0064]
FIG. 12 is a diagram showing a schematic configuration of a resist chemical solution coating apparatus with a laser beam machine according to the third embodiment of the present invention. In FIG. 12, the same parts as those in FIG. 2 are denoted by the same reference numerals, and detailed description thereof is omitted.
[0065]
As shown in FIG. 12, a cup 281 is installed around the stage on which the substrate to be processed is placed. The cup 281 has a function of preventing the chemical solution supplied on the substrate to be processed from scattering. A drain 282 for discharging the chemical is provided at the bottom of the cup 281.
[0066]
A chemical solution supply nozzle 283 that supplies a chemical solution to the workpiece substrate 210 is provided. Examples of the chemical solution supplied from the chemical solution supply nozzle 283 include a liquid used at the time of laser processing, a highly volatile solution used at the time of removing the liquid, and a resist chemical solution. A piezoelectric element 270 is installed in the chemical solution supply nozzle 283. The installed piezoelectric element 270 can apply ultrasonic vibration to the chemical solution to remove bubbles generated by laser light irradiation.
[0067]
First, the substrate to be processed was mounted on the stage. Next, as shown in FIG. 8 (c), an ultrasonic wave was applied to a solution in which ozone gas was dissolved in pure water (hereinafter referred to as ozone water) while slowly rotating the substrate, and supplied to the main surface of the substrate. Although the transmittance of ozone water to laser light was very high, considering the stability of laser processing (focal position / processing position fluctuation), parallel to the substrate to be processed through a gap of 0.5 mm above the substrate to be processed. A quartz glass plate 207a is provided on the substrate, and ozone water 208 is supplied to a space formed by the substrate to be processed and the quartz plate. The notch of the substrate is detected to recognize rough coordinates, and the image of the observation camera 205b installed on the upper surface of the substrate is compared with the image template in which the image of the area including the alignment mark acquired in advance is registered. The mark on the board was recognized. Next, the antireflection film was processed by laser irradiation based on the recognition information of the alignment mark.
[0068]
Laser irradiation was performed for about 500 msec per location, and the anti-reflection film at 40 alignment mark portions and 20 alignment accuracy measurement marks used in the latent image forming system was removed. On the entire surface of the substrate, processing of all marks could be completed in 50 seconds. This time is shorter than the processing time per sheet in the latent image forming system, and is a value set in advance based on the processing time of the latent image forming apparatus. This is a time obtained as a result of automatically adjusting the laser output and the number of pulses per pulse of the laser processing apparatus so that this time is reached.
[0069]
Next, the ozone water 208 on the surface of the substrate to be processed 210 was roughly removed by rotating the substrate at a high speed, and further transported to the first solvent removing device 104b and heated. The heating temperature of the substrate to be processed 210 was 200 ° C. The reason for heating is to remove the adsorbed water on the surface of the antireflection film 305 and make the exposure environment the same. When this treatment is not performed, the acid generated by exposure moves due to the water remaining slightly in the film at the portion in contact with water, resulting in a pattern defect.
[0070]
Next, after the heated substrate to be processed 210 was transferred to the second substrate temperature control apparatus 105 and cooled, the cooled substrate to be processed 210 was transferred to the resist chemical solution coating apparatus 106. In the resist chemical solution coating apparatus 106, while rotating the substrate to be processed 210, a resist solvent containing ethyl lactate as a main component is dropped onto the antireflection film 305 and spread by centrifugal force to form a uniform resist film of 500 nm. . Next, the substrate to be processed 210 on which the resist solution film is formed is transported to the second solvent removing apparatus 107 and heated, and as shown in FIG. 8D, the solvent remaining in the resist solution film. Then, a resist film 306 having a thickness of 400 nm is formed.
[0071]
Next, the substrate to be processed was transferred inline from the film forming system to the latent image forming system using a substrate transfer device.
First, as shown in FIG. 9E, in the latent image forming system 120, the alignment mark on the substrate 210 to be processed is detected by the alignment detector using the same wavelength as the exposure wavelength for the reference light 307. It was. At this time, good detection intensity was obtained. Next, as shown in FIG. 9F, the exposure unit 306a of the resist film 306 was exposed based on the position information measured by the alignment detector. If the antireflection film on the alignment mark has not been removed as in the prior art, the alignment mark could not be detected at all (if it was forcibly performed, a resist formed by developing later) The accuracy of the pattern was ± 70 nm, and almost no semiconductor device could be fabricated.
[0072]
After the latent image forming process, the film was transferred to the PEB process heating device 110 of the film forming system 100, and the substrate 210 to be processed was subjected to heat treatment. The heat treatment (PEB) was performed in order to perform an acid catalytic reaction of the used resist (chemically amplified resist).
[0073]
After this heat treatment, as shown in FIG. 9G, the resist film 306 is transported to the developing unit 111 to develop the resist film 306, and a desired resist pattern 309 is formed with an accuracy of ± 5 nm or less. Further, using the resist pattern 309 as a mask, the base antireflection film 305 and the insulating film 304 are etched (FIG. 10H), and then the resist pattern 309 and the antireflection film 305 are removed (FIG. i)).
[0074]
As described above, in the present embodiment, by causing a liquid to flow in the laser irradiation region, damage in the vicinity of the laser light irradiation region can be suppressed, and generation of scattered matter due to energy beam irradiation can be reduced. be able to. Further, by providing the laser processing apparatus in the pattern forming system (film forming system), it is possible to reduce the time required for creating a product during laser processing.
[0075]
In the present embodiment, at the time of laser processing, an ultrasonic wave is applied to a solution in which ozone is dissolved in pure water. The purpose of using pure water in which ozone is dissolved is to oxidize and decompose foreign matter on the antireflection film with ozone. For the same purpose, an oxidizing gas such as oxygen can be dissolved in pure water.
[0076]
If foreign matter is likely to be adsorbed on the surface of the antireflection film, laser processing may be performed using hydrogen water in which hydrogen is dissolved in pure water. In addition, in order to make an environment in which foreign substances are easily separated, acidic water in which hydrogen chloride or the like is dissolved in pure water, or alkaline water in which ammonia or the like is dissolved in pure water can be used. Ultrasonic waves were used to make it easier for foreign objects to leave the substrate or film surface.
[0077]
In this embodiment, the ArF projection exposure apparatus is used as the latent image forming apparatus, but the present invention is not limited to this. As the latent image forming apparatus, not only an ArF projection exposure apparatus but also any latent image forming apparatus such as an apparatus having another exposure light source, an exposure electron beam exposure apparatus, an X-ray exposure apparatus, and an EUV exposure apparatus can be used.
[0078]
Further, in the present invention, the film transfer system to the latent image forming system (exposure device), and the space between the latent image forming system (exposure device) and the developing system are all carried out in a single-wafer system by mechanical conveyance. However, the present invention is not limited to this, and when the exposure apparatus is placed separately from the film forming system, it may be carried out by a batch method using several sheets by manual conveyance or mechanical conveyance.
[0079]
(Third embodiment)
In the present embodiment, a film forming system having a configuration in which a coating film forming apparatus and a laser processing apparatus are combined will be described.
[0080]
FIG. 11 is a block diagram showing a configuration of a pattern forming system according to the third embodiment of the present invention. In FIG. 11, the same parts as those in FIG.
[0081]
In this film forming system, as shown in FIG. 11, the resist chemical solution coating apparatus and the laser processing apparatus, which are separate apparatuses in the first embodiment, are combined into one apparatus, and a resist chemical solution coating apparatus with a laser processing device 406 is provided. Is provided. The apparatus 406 also uses a spin coating type.
[0082]
In this embodiment, a projection exposure apparatus that uses a KrF excimer laser (248 nm) as an exposure light source and transfers a mask image onto a substrate via an exposure mask is used as the latent image forming system.
[0083]
Next, the manufacturing process of the semiconductor device using the system shown in FIG. 11 will be described. Since the manufacturing process is the same as that of the second embodiment, detailed description of the manufacturing process is omitted, and laser processing and a resist film are performed. Only the process related to coating will be described.
[0084]
Similarly to the process described in the second embodiment, after forming an antireflection film on the substrate to be processed, the substrate to be processed was further carried into a resist chemical solution coating apparatus with a laser processing device (FIG. 6). First, a process of removing the anti-reflection film at the 40 alignment mark portions used by the latent image forming means and the 20 alignment accuracy measurement marks was performed on the workpiece substrate.
[0085]
In addition to the one shown in FIG. 12, the resist chemical solution coating apparatus with a laser processing device can move the resist chemical solution supply nozzle 283 between the substrate to be processed 210 and the partition plate 284, so that the resist chemical solution coating device is provided on the main surface of the substrate to be processed. The chemical solution can be supplied. Further, the window 207a, the chemical solution supply nozzle 283, and the piezoelectric element 270 can be temporarily moved above the substrate.
[0086]
First, the substrate to be processed was mounted on the stage 211. Next, an ethyl lactate that is soluble in the solvent used in the resist solution (one of the solvents contained in the resist solution) is placed above the substrate with a nozzle that supplies the solvent onto the substrate, and the chemical solution while slowly rotating the substrate Started supplying. A quartz plate was arranged with a gap of 0.2 mm from the substrate surface so that ethyl lactate had a thickness that was transparent to a laser wavelength of 256 nm used for processing, and flowed into the space. By detecting the notch of the substrate and recognizing rough coordinates, comparing the image of the observation camera 205b installed on the upper surface of the substrate with the image template in which the region including the alignment mark acquired in advance is registered, A mark on the substrate to be processed was recognized, and laser processing was performed based on the recognition information. Laser processing was performed at about 300 msec per location, and processing of all marks could be completed in 30 seconds on the entire surface of the substrate. This time is shorter than the processing time per sheet in the latent image forming apparatus, and is a value set in advance based on the processing time of the latent image forming apparatus. This is the time obtained as a result of automatically adjusting the laser output and the number of pulses per pulse of the laser processing apparatus so that this time is reached.
[0087]
After the laser processing, the solvent was supplied and the substrate to be processed was rotated so that the ethyl lactate solvent was supplied to the entire surface of the substrate to be processed. Since the wettability of the resist solution to the antireflection film is different between the portion supplied with ethyl lactate and the portion not supplied with ethyl lactate, the entire substrate surface was once exposed to ethyl lactate. Thereafter, ethyl lactate was shaken off from the surface of the substrate to be processed, and most of the substrate was removed from the substrate to be processed.
[0088]
This process is performed when the solvent used for laser processing has the property of remaining on the substrate to be processed and affects the coating characteristics in the next resist coating process. When the solvent used in laser processing is quick-drying and does not change the surface of the substrate, it is not necessary to perform the above treatment.
[0089]
Needless to say, ethyl lactate is contained in the resist solution to be applied thereafter and is soluble in the resist solution. In this embodiment, ethyl lactate contained in the resist solvent is used as a solvent that dissolves in the resist solvent. However, the present invention is not limited to this, and any solvent having solubility with the resist solvent may be used.
[0090]
A resist solvent supply device (not shown in FIG. 12) is disposed on the substrate to be processed above the main surface of the substrate, a resist solvent containing ethyl lactate as a main component is dropped, and it is spread by a rotating force to spread a uniform resist of 500 nm. A liquid film was formed. Next, this substrate was transported to the second solvent removal apparatus 107 and heated to remove the solvent remaining in the resist solution film, thereby forming a resist film having a thickness of 400 nm.
[0091]
Subsequent processes for forming a latent image, exposure, and etching are the same as those in the second embodiment, and thus description thereof is omitted.
[0092]
In this embodiment, the KrF projection exposure apparatus is used as the latent image forming apparatus, but the present invention is not limited to this. As the latent image forming apparatus, various latent image forming apparatuses such as an exposure electron beam exposure apparatus, an X-ray exposure apparatus, and an EUV exposure apparatus can be used as well as a KrF projection exposure apparatus.
[0093]
Although the laser processing means is included in the film forming means, if the fluid liquid used for laser processing is a pure water system, the supply system may be partially shared with the developing means or the etching means. .
[0094]
Note that the resist chemical solution coating apparatus 406 with a laser processing device is not limited to the method shown in FIG. 12, but may have any configuration as long as the laser irradiation is performed while generating a liquid flow on the processing region surface of the substrate to be processed. I do not care.
[0095]
In the present embodiment, the coating liquid film is formed by the spin coating method, but may be formed by using linear coating or the like. In this case, since the amount of the solvent in the liquid film is very large, it is preferable to use a decompression means instead of the heating means for removing the solvent. In this case, heating is preferably performed after removing the solvent by exposure to a reduced pressure near the saturated vapor pressure.
[0096]
The antireflection film does not need to be an organic film as in the present embodiment. For example, SiN formed by sputtering or CVD._xO_yAn inorganic film such as (x, y is a composition ratio) or carbon may be used.
[0097]
(Fourth embodiment)
When patterning the uppermost photosensitive polyimide in a semiconductor manufacturing apparatus in a lithography process, light is absorbed or attenuated by the polyimide film, so that there is a problem that it is difficult to observe the alignment mark even if ordinary visible light is used. Of course, when light having the same wavelength as the exposure light is used as the alignment mark observation light, the mark cannot be detected.
[0098]
In the present embodiment, a pattern forming apparatus that performs application / formation and patterning of a photosensitive polyimide film will be described. FIG. 13 is a block diagram showing a schematic configuration of a pattern forming system according to the fourth embodiment of the present invention. In FIG. 13, the same parts as those in FIG. 1 are denoted by the same reference numerals, and detailed description thereof is omitted.
[0099]
As shown in FIG. 13, this system includes a photosensitive polyimide chemical solution coating device 506 and a solvent removing device 507. Further, a laser processing apparatus is provided for removing the photosensitive polyimide film on the region including the alignment mark after the formation of the photosensitive polyimide film.
[0100]
Next, the formation and patterning process of the photosensitive polyimide using this system will be described with reference to FIG.
[0101]
First, a substrate to be processed in which alignment marks 603 and pads 604 are formed in an interlayer insulating film 602 on an Si substrate 601 is prepared, and the substrate to be processed is loaded into the carrier station 101. Here, the interlayer insulating film is a silicon oxide film, a low dielectric constant film mainly composed of a silicon oxide film containing a methyl group or the like, a low dielectric constant film made of an organic material, or a silicon nitride film on a semiconductor substrate. It is the formed insulating film.
[0102]
The substrate to be processed in the carrier station 101 is transferred to the photosensitive polyimide chemical solution coating apparatus 506 using the substrate transfer machine 102. In the photosensitive polyimide chemical coating apparatus 506, a photosensitive polyimide liquid film is formed on the interlayer insulating film 602 on the main surface of the substrate to be processed. Next, the substrate to be processed is transferred from the photosensitive polyimide chemical solution coating apparatus 506 to the solvent removing apparatus 507 using the transfer device 102. In the solvent removing apparatus 507, the substrate to be processed is heated to volatilize the solvent in the liquid film, thereby forming a photosensitive polyimide film 605 as shown in FIG. Next, the substrate to be processed is transferred from the solvent removing device 507 to the substrate temperature adjusting device 508 using the substrate transfer device 102, and the substrate to be processed is cooled.
[0103]
Next, the substrate to be processed is transferred from the substrate temperature adjustment device 508 to the laser processing device 108 using the substrate transfer device 102. Next, in the same process as in the second and third embodiments, laser processing is performed on the photosensitive polyimide film while supplying pure water to the surface of the substrate to be processed. As shown in FIG. The photosensitive polyimide film 605 on the region including the alignment mark 603 is removed.
[0104]
As a laser oscillator used for laser processing, it is possible to select any of the fourth harmonic, the third harmonic and the second harmonic of Q-switch YAG, and the wavelength of the harmonic is 266 nm, 355 nm and 532 nm. The wavelength can be appropriately selected so as to obtain an optimum processing condition depending on the material formed in the polyimide lower layer and the polyimide film thickness.
[0105]
In the present embodiment, a wavelength of 355 nm is used in order not to process the interlayer insulating film 602 formed in the lower layer. When a silicon nitride film is formed on the uppermost layer of the interlayer insulating film, for example, when removing not only polyimide but also the silicon nitride film, it is better to use a wavelength of 266 nm.
[0106]
The film thickness of the photosensitive polyimide film 605 is 3 μm, and the laser irradiation energy density is 0.5 J / cm per pulse.²It was. 0.5 J / cm²The processing speed with the energy irradiation is about 0.3 μm / pulse per pulse. However, the processing speed changes by about ± 20% due to the influence of local variation of the polyimide film thickness or the influence of non-uniformity of the laser energy.
[0107]
Therefore, this apparatus performs processing while automatically performing in-situ observation whether or not polyimide is removed using the observation system 205, and performs processing while appropriately controlling the number of pulses and pulse energy depending on the irradiation location.
[0108]
0.5 J / cm of 3 μm thick polyimide²In the case of removing with the irradiation energy of 1, it was possible to remove the polyimide on the mark with the number of pulses of 10 pulses to 15 pulses. Even in a laser processing apparatus that does not include the observation system 205, it is possible to remove all regions by irradiating with 15 pulses of laser.
[0109]
However, by providing the observation system 205 and a mechanism for judging the machining shape, the number of pulses and energy can be automatically controlled, eliminating the need for unnecessary irradiation and dramatically improving the processing time. It becomes.
[0110]
At the time of this laser processing, power of 40 kHz and 50 W was applied to the piezoelectric element 270 at least during laser irradiation. As shown in FIG. 14B, no scattering of processing waste was observed around the laser processing region and the processing region. Also, no irradiation damage such as peeling or cracking has been observed.
[0111]
By removing the photosensitive polyimide film 605 on the region including the alignment mark 603 by laser processing, it becomes easy to observe the mark when using an alignment scope using visible light, and the alignment error is drastically reduced. It is possible to improve the yield dramatically. Furthermore, when exposure light is used as alignment light, the mark cannot be observed at all if polyimide is formed, but the alignment mark can be observed by removing it.
[0112]
Next, the substrate to be processed is transferred from the laser processing apparatus 108 to the solvent removing apparatus 507 using the substrate transfer device 102. Next, the solvent removing apparatus 507 heats the substrate to be processed to dry the surface. Next, the substrate to be processed is transferred from the photosensitive polyimide film forming apparatus to the temperature adjustment device 508 using the substrate transfer device 102, and the substrate to be processed is cooled. In this embodiment, pure water is used as a cooling medium at the time of laser processing. However, when a solvent such as thinner is used, there is no need to perform a drying step.
[0113]
Next, the substrate to be processed is transferred from the temperature adjustment device 508 to the latent image forming system 120 using the substrate transfer device 102. In the latent image forming system 120, first, an alignment mark on the substrate to be processed is detected by an alignment detector using the same wavelength as the exposure wavelength for the reference light 307. Next, the photosensitive polyimide film 605 is exposed based on the position information measured by the alignment detector. Next, the substrate to be processed is transported from the latent image forming system 120 to the developing unit 111 by using the substrate transporting machine 102, and the exposed photosensitive polyimide film 605 is developed as shown in FIG. A photosensitive polyimide film pattern is formed.
[0114]
Next, the substrate to be processed is transferred to an etching apparatus (RIE apparatus) 112, and as shown in FIG. 14D, the interlayer insulating film 602 is etched using the photosensitive polyimide film pattern as a mask to expose the pad 604. Let
[0115]
As described above, by performing laser processing of the photosensitive polyimide film in a cooling liquid such as pure water, the scattered coolant is removed, and reading errors and surroundings that have been a processing problem in the atmosphere are removed. Yield reduction due to adverse effects on patterning is improved.
[0116]
As a laser processing apparatus that removes polyimide on a mark by laser irradiation and facilitates observation of the mark, an apparatus for removing polyimide by laser irradiation in the atmosphere has been proposed as disclosed in JP-A-10-1173779. ing. However, in this proposed apparatus, since the laser irradiation is performed in the atmosphere, processing waste is scattered around the removal area and the periphery of the removal area, the mark reading error increases, and the patterning of the periphery is adversely affected. As a result, there arises a problem that the yield decreases.
[0117]
(Fifth embodiment)
In the fourth embodiment, the step of removing polyimide on the mark has been described. In the present embodiment, a method will be described in which patterning for directly forming a pad opening and a fuse window is applied to polyimide using laser processing. Here, the fuse is a fuse connected to the redundancy circuit and the trimming circuit.
[0118]
FIG. 15 is a block diagram showing a schematic configuration of a film forming system according to the fifth embodiment of the present invention. In FIG. 15, the same parts as those in FIG. 13 are denoted by the same reference numerals, and detailed description thereof is omitted.
[0119]
Since the resist film pattern is not formed, the film forming system shown in FIG. 15 is different from the pattern forming system shown in FIG. 13 in that there is no latent image forming system and developing unit. Further, as the chemical solution coating apparatus, a polyimide chemical solution coating apparatus 706 is provided.
[0120]
Next, a manufacturing process of the semiconductor device according to the fifth embodiment of the present invention will be described with reference to process cross-sectional views of FIGS.
First, as shown in FIG. 16A, a substrate to be processed in which a pad 604 and a fuse 611 are formed in an interlayer insulating film 602 on a Si substrate 601 is prepared. Subsequently, after carrying in the polyimide chemical | medical solution coating device 706 and apply | coating a polyimide chemical | medical solution, it carries in to a solvent removal apparatus, the solvent in a coating film is removed, and the polyimide film 612 is formed on the interlayer insulation film 602. At this time, the polyimide film 612 need not use photosensitive polyimide as used in the fourth embodiment. Therefore, it is possible to use a very inexpensive polyimide.
[0121]
Next, the substrate to be processed is carried into a laser processing apparatus as shown in FIG. 2, and laser processing is performed. The laser beam used at the time of laser processing is the third harmonic of Q-switch YAG and has a wavelength of 355 nm.
[0122]
The film thickness of polyimide is 3 μm, and the laser irradiation energy density is 0.5 J / cm per pulse.²It was. This device uses the observation system shown in FIG. 2 to determine whether or not polyimide has been removed, and performs processing while automatically performing in-situ observation, and processing while appropriately controlling the number of pulses and pulse energy depending on the irradiation location. I do.
[0123]
The shape after removing the polyimide film on the pad 604 and the fuse 611 using the apparatus of FIG. 2 is shown in FIG. At the time of this processing, power of 40 kHz and 50 W was applied to the piezoelectric element at least during laser irradiation.
[0124]
The alignment at this time was performed by observing the alignment mark using visible light. However, when alignment observation is difficult and an alignment error occurs, the polyimide on the alignment mark is used in advance as shown in the previous embodiment. It is possible to easily observe the alignment mark by removing. As shown in FIG. 16B, no scattering of processing waste was observed around the laser processing region and the processing region. Also, no irradiation damage such as peeling or cracking has been observed.
[0125]
Next, the substrate to be processed is carried into an RIE apparatus, and the interlayer insulating film 602 is etched using the polyimide film 612 as a mask to expose the pad 604 and form a fuse window.
[0126]
As described in the present embodiment, by performing laser processing in a liquid, it is possible to process polyimide on a mark, a pad, and a fuse while suppressing generation of processing waste and irradiation damage. According to this method, the yield of the semiconductor device is improved, and at the same time, the chemical process such as the development process in the lithography process can be eliminated, so that adverse effects on the environment can be reduced.
[0127]
In addition, this invention is not limited to the said embodiment, In the range which does not deviate from the summary, it can change and implement variously.
[0128]
【The invention's effect】
As described above, according to the present invention, by performing laser processing in a liquid, it is possible to process polyimide on a mark, a pad, and a fuse while suppressing generation of processing waste and irradiation damage. .
[0129]
In addition, since the coating liquid thin film forming means and the coating thin film forming means for forming a coating film such as a resist film and an SOG film are connected to the laser processing apparatus via a transfer device, the formation of the coating film in-line Since laser processing can be performed, the manufacturing time can be shortened.
[Brief description of the drawings]
FIG. 1 is a block diagram showing a schematic configuration of a pattern forming system according to a first embodiment.
FIG. 2 is a diagram showing a configuration of a laser processing apparatus according to the first embodiment.
FIG. 3 is a diagram showing a flow of a substrate to be processed which is transported by a substrate transport machine.
4 is a process cross-sectional view for explaining a manufacturing process of the semiconductor device according to the first embodiment; FIG.
FIG. 5 is a process cross-sectional view for explaining a manufacturing process of the semiconductor device according to the first embodiment;
6 is a process cross-sectional view for explaining the manufacturing process of the semiconductor device according to the first embodiment; FIG.
7 is a process cross-sectional view for explaining the manufacturing process of the semiconductor device according to the first embodiment; FIG.
FIG. 8 is a process cross-sectional view showing the manufacturing process of the semiconductor device according to the second embodiment.
FIG. 9 is a process cross-sectional view illustrating a manufacturing process of a semiconductor device according to a second embodiment of the present invention.
FIG. 10 is a process sectional view showing a manufacturing process of a semiconductor device according to the second embodiment of the invention.
FIG. 11 is a block diagram showing a configuration of a pattern forming system according to a third embodiment.
FIG. 12 is a diagram showing a schematic configuration of a resist chemical solution coating apparatus with a laser beam machine according to a third embodiment.
FIG. 13 is a block diagram showing a schematic configuration of a pattern forming system according to a fourth embodiment.
FIG. 14 is a process cross-sectional view showing the manufacturing process of the semiconductor device according to the fourth embodiment.
FIG. 15 is a block diagram showing a schematic configuration of a film forming system according to a fifth embodiment.
FIG. 16 is a process cross-sectional view showing the manufacturing process of the semiconductor device according to the fifth embodiment.
[Explanation of symbols]
100: Film formation system
101 ... Carrier station
102. Substrate transfer machine
103: First substrate temperature control device
104a ... Anti-reflection chemical coating device
104b ... 1st solvent removal apparatus
105 ... Second substrate temperature control device
106: Resist chemical solution coating apparatus
107: Second solvent removing apparatus
108: Laser processing apparatus
109 ... Third substrate temperature control device
110 ... PEB process heating device
111 ... Developing unit
120 ... latent image forming system
202 ... Laser oscillator
202a ... Laser light
203 ... Laser oscillator control unit
204: Optical system
205 ... Observation system
205b ... Observation camera
206 ... Scanning system
207 ... Holder
207a ... Quartz glass plate
208 ... Liquid
209 ... Fluid flow device
210 ... Substrate to be processed
211 ... Stage
270 ... Piezoelectric element
271 ... Piezoelectric element drive control circuit
301 ... Semiconductor substrate
302 ... Alignment mark
302 ... Semiconductor substrate
303 ... pattern
304: Insulating film
305 ... Antireflection film
306... Resist film
306a ... exposure section
307 ... Reference light
309 ... resist pattern
310 ... Protective film

Claims (20)

Forming a first thin film on a main surface of a substrate to be processed comprising a semiconductor substrate and an alignment mark formed on the main surface of the semiconductor substrate;
Irradiating the first thin film on the region including the alignment mark with a first energy beam to selectively remove a part of the first thin film;
Supplying a chemical liquid containing a photosensitive substance and a solvent on the first thin film to form a coating liquid thin film on the first thin film;
Removing the solvent contained in the coating solution thin film to form a photosensitive thin film;
Carrying the workpiece substrate into a latent image forming means and irradiating the alignment mark with reference light through a region where the first thin film has been selectively removed; and recognizing the position of the mark;
Irradiating a predetermined position on the photosensitive thin film with a second energy beam based on the recognized position of the alignment mark to form a latent image on the photosensitive thin film;
Forming a photosensitive thin film pattern by selectively removing at least a part of the photosensitive thin film based on a latent image formed on the photosensitive thin film,
When irradiating the first energy beam, supply a liquid to at least the irradiation region of the first energy beam,
In the liquid, at least one gas of ozone, oxygen, hydrogen, ammonia, carbon dioxide, hydrogen chloride is dissolved in pure water, any of oxidizing water, reducing water, alkaline water, acidic water, Alternatively, a method for manufacturing a semiconductor device, wherein an organic solvent is used. Forming a first thin film on a main surface of a substrate to be processed comprising a semiconductor substrate and an alignment mark formed on the main surface of the semiconductor substrate;
Supplying a chemical liquid containing a photosensitive substance and a solvent on the first thin film to form a coating liquid thin film on the first thin film;
Removing the solvent contained in the coating solution thin film to form a photosensitive thin film;
Irradiating the photosensitive thin film on the region including the alignment mark with a first energy beam to selectively remove the photosensitive thin film and a part of the first thin film;
Irradiating the alignment mark with reference light through a region where a part of the photosensitive thin film and the first thin film is selectively removed, and recognizing the position of the mark;
Irradiating a predetermined position of the photosensitive thin film with a second energy ray based on the position of the recognized alignment mark to form a latent image on the photosensitive thin film;
Forming a photosensitive thin film pattern by selectively removing a part of the photosensitive thin film based on a latent image formed on the photosensitive thin film,
When irradiating the first energy beam, supply a liquid to at least the irradiation region of the first energy beam,
In the liquid, at least one gas of ozone, oxygen, hydrogen, ammonia, carbon dioxide, hydrogen chloride is dissolved in pure water, any of oxidizing water, reducing water, alkaline water, acidic water, Alternatively, a method for manufacturing a semiconductor device, wherein an organic solvent is used. A process of forming a coating solution thin film by supplying a chemical solution containing a photosensitive substance and a solvent onto a main surface of a substrate to be processed having a semiconductor substrate and an alignment mark formed on the main surface of the semiconductor substrate. When,
Removing the solvent contained in the coating solution thin film to form a photosensitive thin film on the substrate to be processed;
Irradiating the photosensitive thin film on the region including the alignment mark with a first energy beam to selectively remove a part of the photosensitive thin film;
Carrying the substrate to be processed into a latent image forming means and irradiating the alignment mark with reference light through a region where the photosensitive thin film is selectively removed; and recognizing the position of the mark;
Irradiating a predetermined position of the photosensitive thin film with a second energy beam based on the position of the recognized alignment mark to form a latent image on the photosensitive thin film;
On the basis of the photosensitive thin film which is formed on a latent image, a method of manufacturing a semiconductor device and forming a selectively remove the photosensitive thin film pattern said photosensitive film,
When irradiating the first energy beam, supply a liquid to at least the irradiation region of the first energy beam,
In the liquid, at least one gas of ozone, oxygen, hydrogen, ammonia, carbon dioxide, hydrogen chloride is dissolved in pure water, any of oxidizing water, reducing water, alkaline water, acidic water, Alternatively, a method for manufacturing a semiconductor device, wherein an organic solvent is used. Forming a first thin film on a main surface of a substrate to be processed comprising a semiconductor substrate and an alignment mark formed on the main surface of the semiconductor substrate;
Irradiating the first thin film on the region including the alignment mark with a first energy beam to selectively remove a part of the first thin film;
Supplying a chemical liquid containing a photosensitive substance and a solvent on the first thin film to form a coating liquid thin film on the first thin film;
Removing the solvent contained in the coating solution thin film to form a photosensitive thin film;
Carrying the workpiece substrate into a latent image forming means and irradiating the alignment mark with reference light through a region where the first thin film has been selectively removed; and recognizing the position of the mark;
Irradiating a predetermined position on the photosensitive thin film with a second energy beam based on the recognized position of the alignment mark to form a latent image on the photosensitive thin film;
Forming a photosensitive thin film pattern by selectively removing at least a part of the photosensitive thin film based on a latent image formed on the photosensitive thin film,
When irradiating the first energy beam, supply a liquid to at least the irradiation region of the first energy beam,
Applying an ultrasonic wave to the liquid irradiated with the first energy ray ;
In the liquid, at least one gas of ozone, oxygen, hydrogen, ammonia, carbon dioxide, hydrogen chloride is dissolved in pure water, any of oxidizing water, reducing water, alkaline water, acidic water, Alternatively, a method for manufacturing a semiconductor device, wherein an organic solvent is used . Forming a first thin film on a main surface of a substrate to be processed comprising a semiconductor substrate and an alignment mark formed on the main surface of the semiconductor substrate;
Supplying a chemical liquid containing a photosensitive substance and a solvent on the first thin film to form a coating liquid thin film on the first thin film;
Removing the solvent contained in the coating solution thin film to form a photosensitive thin film;
Irradiating the photosensitive thin film on the region including the alignment mark with a first energy beam to selectively remove the photosensitive thin film and a part of the first thin film;
Irradiating the alignment mark with reference light through a region where a part of the photosensitive thin film and the first thin film is selectively removed, and recognizing the position of the mark;
Irradiating a predetermined position of the photosensitive thin film with a second energy ray based on the position of the recognized alignment mark to form a latent image on the photosensitive thin film;
Forming a photosensitive thin film pattern by selectively removing a part of the photosensitive thin film based on a latent image formed on the photosensitive thin film,
When irradiating the first energy beam, supply a liquid to at least the irradiation region of the first energy beam,
Applying an ultrasonic wave to the liquid irradiated with the first energy ray ;
In the liquid, at least one gas of ozone, oxygen, hydrogen, ammonia, carbon dioxide, hydrogen chloride is dissolved in pure water, any of oxidizing water, reducing water, alkaline water, acidic water, Alternatively, a method for manufacturing a semiconductor device, wherein an organic solvent is used . A process of forming a coating solution thin film by supplying a chemical solution containing a photosensitive substance and a solvent onto a main surface of a substrate to be processed having a semiconductor substrate and an alignment mark formed on the main surface of the semiconductor substrate. When,
Removing the solvent contained in the coating solution thin film to form a photosensitive thin film on the substrate to be processed;
Irradiating the photosensitive thin film on the region including the alignment mark with a first energy beam to selectively remove a part of the photosensitive thin film;
Carrying the substrate to be processed into a latent image forming means and irradiating the alignment mark with reference light through a region where the photosensitive thin film is selectively removed; and recognizing the position of the mark;
Irradiating a predetermined position of the photosensitive thin film with a second energy beam based on the position of the recognized alignment mark to form a latent image on the photosensitive thin film;
On the basis of the photosensitive thin film which is formed on a latent image, a method of manufacturing a semiconductor device and forming a selectively remove the photosensitive thin film pattern said photosensitive film,
When irradiating the first energy beam, supply a liquid to at least the irradiation region of the first energy beam,
Applying an ultrasonic wave to the liquid irradiated with the first energy ray ;
In the liquid, at least one gas of ozone, oxygen, hydrogen, ammonia, carbon dioxide, hydrogen chloride is dissolved in pure water, any of oxidizing water, reducing water, alkaline water, acidic water, Alternatively, a method for manufacturing a semiconductor device, wherein an organic solvent is used . Forming a first thin film on a main surface of a substrate to be processed comprising a semiconductor substrate and an alignment mark formed on the main surface of the semiconductor substrate;
Irradiating the first thin film on the region including the alignment mark with a first energy beam to selectively remove a part of the first thin film;
Supplying a chemical liquid containing a photosensitive substance and a solvent on the first thin film to form a coating liquid thin film on the first thin film;
Removing the solvent contained in the coating solution thin film to form a photosensitive thin film;
Carrying the workpiece substrate into a latent image forming means and irradiating the alignment mark with reference light through a region where the first thin film has been selectively removed; and recognizing the position of the mark;
Irradiating a predetermined position on the photosensitive thin film with a second energy beam based on the recognized position of the alignment mark to form a latent image on the photosensitive thin film;
Forming a photosensitive thin film pattern by selectively removing at least a part of the photosensitive thin film based on a latent image formed on the photosensitive thin film,
When irradiating the first energy beam, a liquid is supplied to a part of the first thin film ,
After selectively removing a part of the first thin film, the surface of the first thin film is heated to remove the liquid remaining on the main surface of the substrate to be processed ,
In the liquid, at least one gas of ozone, oxygen, hydrogen, ammonia, carbon dioxide, hydrogen chloride is dissolved in pure water, any of oxidizing water, reducing water, alkaline water, acidic water, Alternatively, a method for manufacturing a semiconductor device, wherein an organic solvent is used . Forming a first thin film on a main surface of a substrate to be processed comprising a semiconductor substrate and an alignment mark formed on the main surface of the semiconductor substrate;
Supplying a chemical liquid containing a photosensitive substance and a solvent on the first thin film to form a coating liquid thin film on the first thin film;
Removing the solvent contained in the coating solution thin film to form a photosensitive thin film;
Irradiating the photosensitive thin film on the region including the alignment mark with a first energy beam to selectively remove the photosensitive thin film and a part of the first thin film;
Irradiating the alignment mark with reference light through a region where a part of the photosensitive thin film and the first thin film is selectively removed, and recognizing the position of the mark;
Irradiating a predetermined position of the photosensitive thin film with a second energy ray based on the position of the recognized alignment mark to form a latent image on the photosensitive thin film;
Forming a photosensitive thin film pattern by selectively removing a part of the photosensitive thin film based on a latent image formed on the photosensitive thin film,
When irradiating the first energy beam, a liquid is supplied to a part of the first thin film ,
After selectively removing a part of the photosensitive thin film and the first thin film, the surface of the first thin film is heated to remove the liquid remaining on the processed substrate main surface ,
In the liquid, at least one gas of ozone, oxygen, hydrogen, ammonia, carbon dioxide, hydrogen chloride is dissolved in pure water, any of oxidizing water, reducing water, alkaline water, acidic water, Alternatively, a method for manufacturing a semiconductor device, wherein an organic solvent is used . Forming a first thin film on a main surface of a substrate to be processed comprising a semiconductor substrate and an alignment mark formed on the main surface of the semiconductor substrate;
Irradiating the first thin film on the region including the alignment mark with a first energy beam to selectively remove a part of the first thin film;
Supplying a chemical liquid containing a photosensitive substance and a solvent on the first thin film to form a coating liquid thin film on the first thin film;
Removing the solvent contained in the coating solution thin film to form a photosensitive thin film;
Carrying the workpiece substrate into a latent image forming means and irradiating the alignment mark with reference light through a region where the first thin film has been selectively removed; and recognizing the position of the mark;
Irradiating a predetermined position on the photosensitive thin film with a second energy beam based on the recognized position of the alignment mark to form a latent image on the photosensitive thin film;
Forming a photosensitive thin film pattern by selectively removing at least a part of the photosensitive thin film based on a latent image formed on the photosensitive thin film,
When irradiating the first energy ray, at least one gas of ozone, oxygen, hydrogen, ammonia, carbon dioxide, hydrogen chloride is dissolved in pure water at least in the irradiation region of the first energy ray. Supplying either basic water, reducing water, alkaline water, acidic water, or an organic solvent,
The method for manufacturing a semiconductor device, wherein the first thin film has absorption or attenuation characteristics with respect to the second energy ray. Forming a first thin film on a main surface of a substrate to be processed comprising a semiconductor substrate and an alignment mark formed on the main surface of the semiconductor substrate;
Supplying a chemical liquid containing a photosensitive substance and a solvent on the first thin film to form a coating liquid thin film on the first thin film;
Removing the solvent contained in the coating solution thin film to form a photosensitive thin film;
Irradiating the photosensitive thin film on the region including the alignment mark with a first energy beam to selectively remove the photosensitive thin film and a part of the first thin film;
Irradiating the alignment mark with reference light through a region where a part of the photosensitive thin film and the first thin film is selectively removed, and recognizing the position of the mark;
Irradiating a predetermined position of the photosensitive thin film with a second energy ray based on the position of the recognized alignment mark to form a latent image on the photosensitive thin film;
Forming a photosensitive thin film pattern by selectively removing a part of the photosensitive thin film based on a latent image formed on the photosensitive thin film,
When irradiating the first energy ray, at least one gas of ozone, oxygen, hydrogen, ammonia, carbon dioxide, hydrogen chloride is dissolved in pure water at least in the irradiation region of the first energy ray. Supplying either basic water, reducing water, alkaline water, acidic water, or an organic solvent,
The method for manufacturing a semiconductor device, wherein the first thin film has absorption or attenuation characteristics with respect to the second energy ray. Forming a first thin film on a main surface of a substrate to be processed comprising a semiconductor substrate and an alignment mark formed on the main surface of the semiconductor substrate;
Irradiating the first thin film on the region including the alignment mark with a first energy beam to selectively remove a part of the first thin film;
Supplying a chemical liquid containing a photosensitive substance and a solvent on the first thin film to form a coating liquid thin film on the first thin film;
Removing the solvent contained in the coating solution thin film to form a photosensitive thin film;
Carrying the workpiece substrate into a latent image forming means and irradiating the alignment mark with reference light through a region where the first thin film has been selectively removed; and recognizing the position of the mark;
Irradiating a predetermined position on the photosensitive thin film with a second energy beam based on the recognized position of the alignment mark to form a latent image on the photosensitive thin film;
Forming a photosensitive thin film pattern by selectively removing at least a part of the photosensitive thin film based on a latent image formed on the photosensitive thin film,
When irradiating the first energy ray, at least one gas of ozone, oxygen, hydrogen, ammonia, carbon dioxide, hydrogen chloride is dissolved in pure water at least in the irradiation region of the first energy ray. Supplying either basic water, reducing water, alkaline water, acidic water, or an organic solvent,
The first thin film reduces the reflected light intensity of the second energy beam reflected by the lower layer of the photosensitive thin film. Forming a first thin film on a main surface of a substrate to be processed comprising a semiconductor substrate and an alignment mark formed on the main surface of the semiconductor substrate;
Supplying a chemical liquid containing a photosensitive substance and a solvent on the first thin film to form a coating liquid thin film on the first thin film;
Removing the solvent contained in the coating solution thin film to form a photosensitive thin film;
Irradiating the photosensitive thin film on the region including the alignment mark with a first energy beam to selectively remove the photosensitive thin film and a part of the first thin film;
Irradiating the alignment mark with reference light through a region where a part of the photosensitive thin film and the first thin film is selectively removed, and recognizing the position of the mark;
Irradiating a predetermined position of the photosensitive thin film with a second energy ray based on the position of the recognized alignment mark to form a latent image on the photosensitive thin film;
Forming a photosensitive thin film pattern by selectively removing a part of the photosensitive thin film based on a latent image formed on the photosensitive thin film,
When irradiating the first energy ray, at least one gas of ozone, oxygen, hydrogen, ammonia, carbon dioxide, hydrogen chloride is dissolved in pure water at least in the irradiation region of the first energy ray. Supplying either basic water, reducing water, alkaline water, acidic water, or an organic solvent,
The first thin film reduces the reflected light intensity of the second energy beam reflected by the lower layer of the photosensitive thin film. Forming a first thin film on a main surface of a substrate to be processed comprising a semiconductor substrate and an alignment mark formed on the main surface of the semiconductor substrate;
Irradiating the first thin film on the region including the alignment mark with a first energy beam to selectively remove a part of the first thin film;
Supplying a chemical liquid containing a photosensitive substance and a solvent on the first thin film to form a coating liquid thin film on the first thin film;
Removing the solvent contained in the coating solution thin film to form a photosensitive thin film;
Carrying the workpiece substrate into a latent image forming means and irradiating the alignment mark with reference light through a region where the first thin film has been selectively removed; and recognizing the position of the mark;
Irradiating a predetermined position on the photosensitive thin film with a second energy beam based on the recognized position of the alignment mark to form a latent image on the photosensitive thin film;
Forming a photosensitive thin film pattern by selectively removing at least a part of the photosensitive thin film based on a latent image formed on the photosensitive thin film,
When irradiating the first energy ray, at least one gas of ozone, oxygen, hydrogen, ammonia, carbon dioxide, hydrogen chloride is dissolved in pure water at least in the irradiation region of the first energy ray. Supplying either basic water, reducing water, alkaline water, acidic water, or an organic solvent,
A method of manufacturing a semiconductor device, wherein the same light source as the second energy beam is used as the light source of the reference light. Forming a first thin film on a main surface of a substrate to be processed comprising a semiconductor substrate and an alignment mark formed on the main surface of the semiconductor substrate;
Supplying a chemical liquid containing a photosensitive substance and a solvent on the first thin film to form a coating liquid thin film on the first thin film;
Removing the solvent contained in the coating solution thin film to form a photosensitive thin film;
Irradiating the photosensitive thin film on the region including the alignment mark with a first energy beam to selectively remove the photosensitive thin film and a part of the first thin film;
Irradiating the alignment mark with reference light through a region where a part of the photosensitive thin film and the first thin film is selectively removed, and recognizing the position of the mark;
Irradiating a predetermined position of the photosensitive thin film with a second energy ray based on the position of the recognized alignment mark to form a latent image on the photosensitive thin film;
Forming a photosensitive thin film pattern by selectively removing a part of the photosensitive thin film based on a latent image formed on the photosensitive thin film,
When irradiating the first energy ray, at least one gas of ozone, oxygen, hydrogen, ammonia, carbon dioxide, hydrogen chloride is dissolved in pure water at least in the irradiation region of the first energy ray. Supplying either basic water, reducing water, alkaline water, acidic water, or an organic solvent,
A method of manufacturing a semiconductor device, wherein the same light source as the second energy beam is used as the light source of the reference light. A process of forming a coating solution thin film by supplying a chemical solution containing a photosensitive substance and a solvent onto a main surface of a substrate to be processed having a semiconductor substrate and an alignment mark formed on the main surface of the semiconductor substrate. When,
Removing the solvent contained in the coating solution thin film to form a photosensitive thin film on the substrate to be processed;
Irradiating the photosensitive thin film on the region including the alignment mark with a first energy beam to selectively remove a part of the photosensitive thin film;
Carrying the substrate to be processed into a latent image forming means and irradiating the alignment mark with reference light through a region where the photosensitive thin film is selectively removed; and recognizing the position of the mark;
Irradiating a predetermined position of the photosensitive thin film with a second energy beam based on the position of the recognized alignment mark to form a latent image on the photosensitive thin film;
On the basis of the photosensitive thin film which is formed on a latent image, a method of manufacturing a semiconductor device and forming a selectively remove the photosensitive thin film pattern said photosensitive film,
When irradiating the first energy ray, at least one gas of ozone, oxygen, hydrogen, ammonia, carbon dioxide, hydrogen chloride is dissolved in pure water at least in the irradiation region of the first energy ray. Supplying either basic water, reducing water, alkaline water, acidic water, or an organic solvent,
A method of manufacturing a semiconductor device, wherein the same light source as the second energy beam is used as the light source of the reference light. Forming a first thin film on a main surface of a substrate to be processed comprising a semiconductor substrate and an alignment mark formed on the main surface of the semiconductor substrate;
Irradiating the first thin film on the region including the alignment mark with a first energy beam to selectively remove a part of the first thin film;
Supplying a chemical liquid containing a photosensitive substance and a solvent on the first thin film to form a coating liquid thin film on the first thin film;
Removing the solvent contained in the coating solution thin film to form a photosensitive thin film;
Carrying the workpiece substrate into a latent image forming means and irradiating the alignment mark with reference light through a region where the first thin film has been selectively removed; and recognizing the position of the mark;
Irradiating a predetermined position on the photosensitive thin film with a second energy beam based on the recognized position of the alignment mark to form a latent image on the photosensitive thin film;
Forming a photosensitive thin film pattern by selectively removing at least a part of the photosensitive thin film based on a latent image formed on the photosensitive thin film,
When irradiating the first energy beam, supply a liquid to at least the irradiation region of the first energy beam,
A method of manufacturing a semiconductor device, comprising: forming a latent image on the photosensitive thin film; and covering at least a part of the region where the first thin film is selectively removed. Forming a first thin film on a main surface of a substrate to be processed comprising a semiconductor substrate and an alignment mark formed on the main surface of the semiconductor substrate;
Supplying a chemical liquid containing a photosensitive substance and a solvent on the first thin film to form a coating liquid thin film on the first thin film;
Removing the solvent contained in the coating solution thin film to form a photosensitive thin film;
Irradiating the photosensitive thin film on the region including the alignment mark with a first energy beam to selectively remove the photosensitive thin film and a part of the first thin film;
Irradiating the alignment mark with reference light through a region where a part of the photosensitive thin film and the first thin film is selectively removed, and recognizing the position of the mark;
Irradiating a predetermined position of the photosensitive thin film with a second energy ray based on the position of the recognized alignment mark to form a latent image on the photosensitive thin film;
Forming a photosensitive thin film pattern by selectively removing a part of the photosensitive thin film based on a latent image formed on the photosensitive thin film,
When irradiating the first energy beam, supply a liquid to at least the irradiation region of the first energy beam,
A method of manufacturing a semiconductor device, comprising: forming a latent image on the photosensitive thin film; and covering at least a part of the region where the first thin film is selectively removed. Forming a first thin film on a main surface of a substrate to be processed comprising a semiconductor substrate and an alignment mark formed on the main surface of the semiconductor substrate;
Irradiating the first thin film on the region including the alignment mark with a first energy beam to selectively remove a part of the first thin film;
Supplying a chemical liquid containing a photosensitive substance and a solvent on the first thin film to form a coating liquid thin film on the first thin film;
Removing the solvent contained in the coating solution thin film to form a photosensitive thin film;
Carrying the workpiece substrate into a latent image forming means and irradiating the alignment mark with reference light through a region where the first thin film has been selectively removed; and recognizing the position of the mark;
Irradiating a predetermined position on the photosensitive thin film with a second energy beam based on the recognized position of the alignment mark to form a latent image on the photosensitive thin film;
Forming a photosensitive thin film pattern by selectively removing at least a part of the photosensitive thin film based on a latent image formed on the photosensitive thin film,
When irradiating the first energy beam, a liquid is supplied to a part of the first thin film ,
Between the step of selectively removing a part of the first thin film and the step of forming the coating solution thin film, the surface of the first thin film is heated, and the liquid remaining on the main surface of the substrate to be processed is removed. the step of removing only contains,
In the liquid, at least one gas of ozone, oxygen, hydrogen, ammonia, carbon dioxide, hydrogen chloride is dissolved in pure water, any of oxidizing water, reducing water, alkaline water, acidic water, Alternatively, a method for manufacturing a semiconductor device, wherein an organic solvent is used . Forming a first thin film on a main surface of a substrate to be processed comprising a semiconductor substrate and an alignment mark formed on the main surface of the semiconductor substrate;
Irradiating the first thin film on the region including the alignment mark with a first energy beam to selectively remove a part of the first thin film;
Supplying a chemical liquid containing a photosensitive substance and a solvent on the first thin film to form a coating liquid thin film on the first thin film;
Removing the solvent contained in the coating solution thin film to form a photosensitive thin film;
Carrying the workpiece substrate into a latent image forming means and irradiating the alignment mark with reference light through a region where the first thin film has been selectively removed; and recognizing the position of the mark;
Irradiating a predetermined position on the photosensitive thin film with a second energy beam based on the recognized position of the alignment mark to form a latent image on the photosensitive thin film;
Forming a photosensitive thin film pattern by selectively removing at least a part of the photosensitive thin film based on a latent image formed on the photosensitive thin film,
When irradiating the first energy beam, a liquid is supplied to a part of the first thin film ,
In the step of removing the solvent from the coating solution thin film, the surface of the first thin film is heated ,
In the liquid, at least one gas of ozone, oxygen, hydrogen, ammonia, carbon dioxide, hydrogen chloride is dissolved in pure water, any of oxidizing water, reducing water, alkaline water, acidic water, Alternatively, a method for manufacturing a semiconductor device, wherein an organic solvent is used . Forming a first thin film on a main surface of a substrate to be processed comprising a semiconductor substrate and an alignment mark formed on the main surface of the semiconductor substrate;
Supplying a chemical liquid containing a photosensitive substance and a solvent on the first thin film to form a coating liquid thin film on the first thin film;
Removing the solvent contained in the coating solution thin film to form a photosensitive thin film;
Irradiating the photosensitive thin film on the region including the alignment mark with a first energy beam to selectively remove the photosensitive thin film and a part of the first thin film;
Irradiating the alignment mark with reference light through a region where a part of the photosensitive thin film and the first thin film is selectively removed, and recognizing the position of the mark;
Irradiating a predetermined position of the photosensitive thin film with a second energy ray based on the position of the recognized alignment mark to form a latent image on the photosensitive thin film;
Forming a photosensitive thin film pattern by selectively removing a part of the photosensitive thin film based on a latent image formed on the photosensitive thin film,
When irradiating the first energy beam, a liquid is supplied to a part of the first thin film ,
In the step of removing the solvent from the coating solution thin film, the surface of the first thin film is heated ,
In the liquid, at least one gas of ozone, oxygen, hydrogen, ammonia, carbon dioxide, hydrogen chloride is dissolved in pure water, any of oxidizing water, reducing water, alkaline water, acidic water, Alternatively, a method for manufacturing a semiconductor device, wherein an organic solvent is used .

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