JP4485310B2 - Semiconductor light emitting device - Google Patents

Description

  The present invention relates to a semiconductor light emitting device such as a lamp type or a chip type in which a light emitting element chip (hereinafter also referred to as an LED chip) is bonded and the periphery thereof is covered with a covering such as a resin, and light is emitted directly from the covering. About. More specifically, the present invention relates to a semiconductor light emitting device having a structure in which a covering covering an LED chip is not easily discolored even when an LED chip with high output or high output is used.

  In the semiconductor light emitting device, for example, an LED chip is mounted on the tip of a first lead, the pair of electrodes are electrically connected to the first and second leads, and the outer periphery thereof is made of a translucent epoxy resin or the like. The LED chip is mounted on an insulating substrate having a lamp type (so-called bullet type) covering with a pair of terminals and a pair of terminal electrodes formed on both ends, and provided on both ends of the pair of electrodes and the insulating substrate. A pair of terminal electrodes are electrically connected to each other, and are formed in a chip-type structure or the like whose surface is covered with a translucent epoxy resin or the like. In recent years, blue light emitting or ultraviolet light emitting LEDs have been developed, and a blue or ultraviolet light LED chip is used to provide white light emission by providing a light emitting color conversion member in the epoxy resin covering the surface or on the surface thereof. For example, a light emitting device in which the light emission color of a light source is converted is used. Such a semiconductor light emitting device is configured, for example, as shown in FIG. 5 as an example of a lamp type light emitting device.

That is, in FIG. 5, the LED chip 53 is bonded to the tip of the first lead 51 formed from the plate-like body in the recess 51a formed from the end face of the plate-like body, and one electrode thereof is the first electrode. The other electrode is electrically connected to the lead 51, and the other electrode is also electrically connected to the tip of the second lead 52, which is also formed of a plate-like body, by the wire 54, and further in the recess 51a of the first lead. Is filled with a light emitting color conversion member 55 and the periphery thereof is covered with a translucent resin 56 such as an epoxy resin (see, for example, Patent Document 1). As the light emission color conversion member 55, for example, a material obtained by mixing, for example, a yttrium, aluminum, garnet (YAG) -based fluorescent material in a translucent resin or the like is used.
JP 2003-124530 A

  As described above, in a semiconductor light emitting device having a structure in which an LED chip is covered with a light-transmitting resin such as an epoxy resin, there is a problem that the light-transmitting resin is likely to change color with time. In particular, when the LED chip emits blue light or ultraviolet light, the epoxy resin is likely to change color when the light intensity is high. Therefore, there is a problem that the emission color changes or the light intensity decreases with the passage of time of use. In addition, since epoxy resin is vulnerable to heat, the temperature of the lead rises due to soldering during mounting, and when heat is transferred to the cover, the lead and cover are peeled off, causing flux, moisture, etc. There is a problem that the reliability of LED chips, wire bonding, and the like is reduced due to penetration.

  On the other hand, silicone resin and the like are not easily discolored by ultraviolet light and do not cause the problem of discoloration or light intensity reduction. There is a problem of deformation when touched.

  The present invention has been made to solve such problems. Even if the LED chip is an LED chip that emits blue or ultraviolet light, or an LED chip with a very high light intensity, Even in a light emitting device that easily rises in temperature, such as a lead, a lamp type or a chip type that has a structure in which the covering covering the LED chip is not easily discolored or peels off from the lead due to heat or deformation of the covering does not easily occur. An object is to provide a semiconductor light emitting device.

  Another object of the present invention is to provide a semiconductor light emitting device capable of converting a light emission color of an LED chip into a desired light emission color by mixing a light emission color conversion member in a coating body that is difficult to discolor to cover the LED chip. Is to provide.

A semiconductor light emitting device according to the present invention comprises a light emitting element chip and a covering provided so as to cover at least the light emitting surface side of the light emitting element chip, and the covering includes phosphor particles for emission color conversion. has therein a porous glass body constituting the envelope thereby aggregating the glass powder formed so as to convert the light emitted from the light emitting element chip to a desired emission color into a desired shape, porous The glass substrate has the same refractive index as that of the porous glass body, and is formed of an ultraviolet light resistant resin filled in the gaps of the porous glass body. The 耐紫outside light resin, for example, silicone resins is preferably used.

The phosphor glass for phosphor color conversion is mixed in the porous glass body so that the light emitted from the light emitting element chip is converted into a desired light emitting color, so that the light emitting element chip emits blue light or ultraviolet light. Even a chip that emits light or emits high brightness is particularly effective because the covering is unlikely to change color or change quality. Further, since the glass body is constituted, the glass body is not discolored, and a semiconductor light emitting device having a very stable emission color can be obtained.

  Specifically, the light emitting element chip is mounted in a recess formed at the tip of the first lead, and the pair of electrodes of the light emitting element chip are electrically connected to the first lead and the second lead, respectively. A lamp-type light emitting device in which the first and second leads are covered in a dome shape with the covering body, and the light emitting element chip has a pair of terminals at both ends. Mounted on an insulating substrate having electrodes, a pair of electrodes of the light emitting element chip are electrically connected to a pair of terminal electrodes provided at both ends of the insulating substrate, respectively, and the light emitting element chip and the pair of pairs A structure of a chip-type light emitting device in which a terminal electrode connection portion is covered with the covering body may be employed.

  According to the present invention, since the LED chip is coated with an aggregate of glass powder, it becomes a very stable coating against heat and ultraviolet light, and it can transmit light such as epoxy resin even when used for a long time. There is no discoloration like resin, and peeling or deformation from the lead due to heat does not occur. In addition, since the gap portion of the glass powder aggregate is filled with a material such as silicone resin that has almost the same refractive index as that of glass, light is not irregularly reflected between the glass powders and is almost transparent to light. It becomes a covering. That is, if voids remain between the glass powders, they are irregularly reflected in the voids due to the difference in refractive index between glass and air, and become transparent like glass, but the resin is buried. Therefore, since there is almost no difference in refractive index between the glass powder and other portions, the light is transmitted without being irregularly reflected. In addition, by adjusting the amount of the resin to be small in volume as compared with the glass powder, discoloration of the conventional epoxy resin can be reduced, but an ultraviolet light resistant resin like a silicone resin is used. Thus, discoloration can be completely prevented.

  In addition, since the voids are eliminated by filling the resin between the glass powders, it is not necessary to perform heat treatment at a high temperature as in the case of eliminating the voids by sintering the glass powder. Therefore, the gap between the glass powders can be eliminated without being affected by the melting of the electrodes or the change due to the heat treatment of the semiconductor layer, even in the LED chip on which the electrode is formed or the semiconductor layer doped with impurities. .

  In addition, by using the glass powder containing the phosphor particles for luminescent color conversion described above, a porous glass body filled with a resin in the void portion is used as an envelope of the semiconductor light emitting device. At the same time, the light emitting color conversion member can be obtained. As a result, a semiconductor light emitting device in which an LED chip that emits blue or ultraviolet light to the LED chip is converted into a desired light emission color such as white can be obtained. Even when such an ultraviolet light is used for the LED chip, in the semiconductor light emitting device according to the present invention, since the covering is mainly composed of a glass porous body, there is no problem such as discoloration. Even if the luminescent color conversion member is not included in the glass powder, the glass powder and phosphor particles for luminescent color conversion may be mixed to form a glass porous body having a desired shape. .

  Next, the semiconductor light emitting device of the present invention will be described with reference to the drawings. The semiconductor light emitting device according to the present invention is provided with a covering 2 so as to cover at least the light emitting surface side of the light emitting element chip 1 as shown in FIG. The covering 2 is formed by filling a gap 22 of a porous glass body 21 in which glass powder is aggregated in a desired shape with a resin 22 such as a silicone resin.

  In the example shown in FIG. 1, the LED chip 1 is bonded to the tip of the first lead 31 formed from a plate-like body in the recess 31a formed from the end face of the plate-like body, and one electrode thereof is the first electrode. One lead 31 and the other electrode are electrically connected to the tip of a second lead 32, which is also formed of a plate-like body, by a wire 33, and the covering 2 is formed around the lead. An example of a lamp-type semiconductor light emitting device is shown.

In addition, the example shown in FIG. 1 is an example of a white light semiconductor light emitting device, and blue light emitted from the LED chip 1 is used for light emission color conversion such as YAG (yttrium, aluminum, garnet) phosphor. An example in which the phosphor particles 212 are turned white is shown. However, such conversion of the emission color is not essential. The YAG phosphor particles 212 shown in FIG. 1 absorb blue light emitted from the LED chip 1 and convert it into yellow, and the yellow light is mixed with blue light emitted from the LED chip 1 to make white. It is. Therefore, as shown in FIG. 2, the LED chip 1 is formed of a nitride semiconductor laminated on a sapphire (Al ₂ O ₃ single crystal) substrate 11, and YAG phosphor particles 212 are formed around the LED chip 1. The covering body 2 is formed by the glass body 21 in which the glass powder 211 containing flocculated and the resin 22 such as an ultraviolet light-resistant resin filled in the voids. The substrate of the LED chip 1 may be made of a semiconductor such as SiC. When a semiconductor layer other than a nitride semiconductor is stacked, the lattice constant, the coefficient of thermal expansion, etc. are taken into account according to the semiconductor layer. Chosen from.

  Here, the nitride semiconductor means a compound in which a group III element Ga and a group V element N or a part or all of a group III element Ga is substituted with other group III elements such as Al and In, and / or Alternatively, it refers to a semiconductor made of a compound (nitride) in which a part of N of the group V element is substituted with another group V element such as P or As.

The LED chip 1 shown in FIG. 2 is formed by laminating a nitride semiconductor layer on a sapphire substrate 11. The semiconductor laminated portion 17 is, for example, a low temperature buffer layer 12 made of GaN of about 0.005 to 0.1 μm, a high temperature buffer layer 13 of undoped GaN of about 1 to 3 μm, and an n-type doped with Si thereon The n-type layer 14 formed by a contact layer made of GaN and a barrier layer (layer having a large band gap energy) made of an n-type AlGaN compound semiconductor layer or the like is about 1 to 5 μm, and the band gap energy is higher than that of the barrier layer. The active layer 15 having a multiple quantum well (MQW) structure in which 3 to 8 pairs of a smaller material, for example, a well layer made of 1 to 3 nm In _0.13 Ga _0.87 N and a barrier layer made of 10 to 20 nm GaN is stacked. A p-type barrier layer composed of a p-type AlGaN compound semiconductor layer (with a large band gap energy) of about 0.05 to 0.3 μm ) And 0.2~1μm about by the p-type layer 16 is combined by a contact layer made of p-type GaN, it is formed by being sequentially stacked, respectively.

  In the example shown in FIG. 2, a high-temperature buffer layer 13 made of undoped and semi-insulating GaN is formed. The provision of the undoped buffer layer 13 is preferable because the crystallinity of the semiconductor layer laminated thereon is improved. However, when the substrate is a semiconductor, it is deleted or made the same conductivity type as the substrate. In addition, the n-type layer 14 and the p-type layer 16 are two examples of the barrier layer and the contact layer. However, a layer containing Al is provided on the active layer 6 side from the viewpoint of the carrier confinement effect. However, only the GaN layer may be used. Moreover, these can also be formed with another nitride semiconductor layer, and another semiconductor layer may further intervene. Furthermore, in this example, the active layer 15 is sandwiched between the n-type layer 14 and the p-type layer 16, but a pn junction structure in which the n-type layer and the p-type layer are directly joined is also possible. Good. In addition, although the p-type AlGaN compound layer is grown directly on the active layer 15, a pit generation layer is formed below the active layer 15 by growing an undoped AlGaN compound layer of about several nanometers. Leakage due to contact between the p-type layer and the n-type layer can also be prevented while embedding the pits formed in 15.

  On the semiconductor laminated portion 17, a light-transmitting conductive layer 18 made of, for example, ZnO and capable of making ohmic contact with the p-type semiconductor layer 16 is provided in a thickness of about 0.01 to 0.5 μm. The translucent conductive layer 18 is not limited to ZnO, and even ITO or a thin alloy layer of about 2 to 100 nm of Ni and Au diffuses current throughout the chip while transmitting light. Can do. Then, a p-side electrode (upper electrode) 19a is formed on a part of the translucent conductive layer 18 by a laminated structure of Ti and Au, and a part of the semiconductor laminated part 17 is removed by etching and exposed. An n-side electrode (lower electrode) 19b for ohmic contact is formed on the n-type layer 14 from a Ti—Al alloy or the like.

In order to manufacture this LED chip 1, for example, by metal organic chemical vapor deposition (MOCVD), together with carrier gas H ₂ , trimethyl gallium (TMG), ammonia (NH ₃ ), trimethylaluminum (TMA), trimethyl Reactive gas such as indium (TMIn) and SiH ₄ as dopant gas for n-type, cyclopentadienylmagnesium (Cp ₂ Mg) or dimethyl zinc (DMZn) as dopant gas for p-type The necessary gas is supplied, and the semiconductor layers are sequentially grown as follows.

  First, on the substrate 11 made of sapphire, for example, a low-temperature buffer layer 12 made of a GaN layer is formed at a low temperature of about 400 to 600 ° C., for example, about 0.005 to 0.1 μm, and then the temperature is about 600 to 1200 ° C. The semi-insulating high-temperature buffer layer 13 made of undoped GaN is formed to about 1 to 3 μm, and the n-type layer 14 made of Si-doped n-type GaN and AlGaN compound semiconductor is formed to about 1 to 5 μm. To do.

Next, the growth temperature is lowered to a low temperature of 400 to 600 ° C., and, for example, 3 to 8 pairs of well layers made of In _0.13 Ga _0.87 N of 1 to 3 nm and barrier layers made of GaN of 10 to 20 nm are stacked. An active layer 6 having a quantum well (MQW) structure is formed to a thickness of about 0.05 to 0.3 μm. Next, the temperature in the growth apparatus is raised to about 600 to 1200 ° C., and the p-type AlGaN compound semiconductor layer and the p-type layer 16 made of GaN are combined and laminated to about 0.2 to 1 μm.

Thereafter, a protective film such as Si ₃ N ₄ is provided on the surface, and annealing is performed at about 400 to 800 ° C. for about 10 to 60 minutes to activate the p-type dopant. For example, a ZnO layer is subjected to MBE, sputtering, or vacuum deposition. The light-transmitting conductive layer 18 is formed by forming a film of about 0.01 to 0.5 μm by a method such as PLD or ion plating. Next, in order to form the n-side electrode 19b, a part of the stacked semiconductor stacked portion 17 is etched by reactive ion etching using chlorine gas or the like so that the n-type layer 14 is exposed.

Next, Ti and Al are successively deposited on the exposed surface of the n-type layer 14 by about 0.1 μm and about 0.3 μm, respectively, by sputtering or vacuum deposition, and by RTA heating at about 600 ° C. for 5 seconds. The n-side electrode 19b is formed by alloying by heat treatment. Note that if the n-side electrode is formed by a lift-off method, the n-side electrode having a predetermined shape can be formed by removing the mask. Thereafter, Ti and Au are vacuum-deposited on the translucent conductive layer 18 by about 0.1 μm and 0.3 μm, respectively, for the p-side electrode 19a, thereby forming the p-side electrode 19a. Thereafter, an insulating film such as SiO _{2 (} not shown) is formed on the entire surface, the surfaces of the p-side electrode 19a and the n-side electrode 19b are exposed, and formed into chips by dicing or the like, whereby the LED chip 1 having the structure shown in FIG. Is obtained.

  As shown in a partially enlarged explanatory view in FIG. 1B, the covering 2 has a resin 22 such as an ultraviolet light resistant resin such as a silicone resin in a gap portion of a porous glass body 21 in which glass powder is aggregated. It is made of filled material. In the example shown in FIG. 1, the porous glass body 21 is formed by aggregating glass powder 211 having a glass coating formed around phosphor particles 212 such as YAG.

  The phosphor particles 212 are particles of a fluorescent material that receives ultraviolet light or visible light and emits light of different wavelengths. The average particle size is about 3 to 50 μm, preferably about 5 to 10 μm. ing. Fluorescent materials include yttrium, aluminum, garnet (YAG) activated by cerium, oxide fluorescent materials such as magnesium oxide and titanium activated by manganese, perylene derivatives, copper and aluminum. An activated sulfide fluorescent material such as zinc cadmium sulfide can be used. However, when the emission color of the LED chip 1 is not converted, the phosphor particles 212 are not provided, and only glass particles may be powdered.

It is preferable that the glass coating does not contain an element that easily reacts with a fluorescent material such as Pb or Bi, which is a constituent element of glass having a low softening point, such as PbO or Bi ₂ O ₃ (1 wt% or less). It is preferable to use a glass (SiO ₂ glass) or borosilicate glass (B ₂ O ₃ —SiO ₂ glass) as a main component. However, as will be described later, since this glass powder is not sintered by raising the temperature until it softens, it does not react so much with the fluorescent substance and does not contain Pb or the like, which is not an absolute condition. The size of the glass powder can be controlled by adjusting the reaction time, the catalyst concentration, the substrate concentration, the solvent concentration, the phosphor amount, and the like when forming by a sol-gel reaction as will be described later.

In order to manufacture the glass powder 211 powder containing such phosphor particles 212, it can be manufactured by a sol-gel method. For example, in order to form a silicate glass film, a silicon alkoxide compound such as tetraethoxysilane (Si (OC ₂ H ₅ ) ₄ ) is mixed with an organic solvent such as ethanol with stirring, and a small amount of ammonia water or the like is mixed. A base or an inorganic acid such as hydrochloric acid or sulfuric acid is further added and stirred, and heated to 20 to 80 ° C. Then, by mixing and stirring the phosphor particles 212 described above, silicon oxide adheres around the phosphor particles 212 and gels while growing a glass film around the phosphor particles 212. The gelled product is placed in a container having a desired shape and dried by heating at 100 to 200 ° C., whereby the porous glass body 21 in which the glass powder is aggregated in a desired shape can be formed. In order to adjust the ratio between the amount of the phosphor particles 212 and the amount of the glass coating 211, the phosphor particles 212 are not contained by increasing the reaction time or decreasing the amount of the phosphor particles 212 to be added. It can be adjusted by forming glass powder 21 or the like. Alternatively, glass powder not containing phosphor particles can be separately formed and mixed with glass powder containing phosphor particles.

Even in the case of using other glass components, similarly, a desired metal alkoxide compound is formed and mixed with the aforementioned ethanol, water, ammonia, etc., and the phosphor particles are mixed and stirred. Can be produced in the same manner. For example, in order to form a borosilicate glass coating or a phosphosilicate glass coating, B (OCH (CH ₃ ) ₂ ) ₃ or P (OCH (CH) (CH (CH ₃ ) ₂ ) is added to the aforementioned tetraethoxysilane (Si (OC ₂ H ₅ ) ₄ ). ₃ ) It can be formed by mixing ₂ ) ₃ etc.

  The resin 22 is an ultraviolet light-resistant resin that is resistant to ultraviolet light that is unlikely to be discolored or altered by blue light or ultraviolet light, and is filled in the gaps of the porous glass body 21, so that it has fluidity. Some are preferable. Moreover, if it is a normal resin, there is no problem because the refractive index is close to that of the glass coating, but a material having the same refractive index as the refractive index of the glass coating is preferable from the viewpoint of preventing irregular reflection of light. From such a viewpoint, for example, a silicone resin can be used, but an epoxy resin, an amide resin, or the like can also be used. In order to fill this gap in the gap between the porous glass bodies 21, for example, the resin 22 can be filled by pouring the resin 22 while evacuating the porous glass body 21.

  Next, a method for manufacturing the semiconductor light emitting device shown in FIG. 1 will be described with reference to FIG. First, as shown in FIG. 3A, in the recess 31a of the lead frame 34 in which the first lead 31 and the second lead 32 in which the recess 31a is formed in the front end portion are formed in FIG. The formed LED chip 1 is mounted, and a pair of electrodes (not shown) is electrically connected to the first and second leads 31 and 32 by wires 33, thereby forming a lead assembly 35. .

  Next, as shown in FIG. 3B, for example, the glass coating material is mixed in a porous glass molding tool 37 formed in a desired covering shape such as a dome shape, and phosphor particles are mixed. The mixed solution 36 is put, and the leading end side of the lead assembly 35 formed in FIG. 3A is inserted into the solution 36 and stirred at about 150 ° C. while heating for about 2 hours to advance the sol-gel reaction. . When the sol-gel reaction is completed, as shown in FIG. 3C, the porous glass body 21 in which the glass powder 211 containing the phosphor particles is aggregated is formed and released from the molding tool 37.

  Thereafter, as shown in FIG. 3D, the opening of the molding tool 37 is covered with a lid 38, and vacuum suction is performed from the other side 37b of the through holes 37a and 37b formed at both ends of the molding tool 37. By pouring, for example, silicone resin 22 from one through-hole 37a, resin 22 is filled into the voids of porous glass body 21, and heat curing is performed at about 100 to 150 ° C. for several hours. A covering 2 is formed. In this covering 2, since the glass powder 21 and the resin 22 have almost the same refractive index, the particle shape of the glass powder 21 is almost invisible, and the covering 2 is not a cloudy white but transparent. The lead assembly 35 on which the covering body 2 is formed is taken out from the molding tool 37, and the resin 22 and the like remaining in the through holes 37a and 37b are removed and molded, whereby a semiconductor as shown in FIG. A light emitting device is obtained.

  FIG. 4A is a cross-sectional explanatory view showing another embodiment of the semiconductor light emitting device according to the present invention. That is, this example is an example of a chip type semiconductor light emitting device in which the LED chip 1 is mounted on an insulating substrate 41 having a pair of terminal electrodes 42a and 42b formed at both ends, and the covering 2 is formed on the surface side thereof. It is. As the insulating substrate 41, a generally used insulating substrate such as ceramics or glass epoxy resin is used, and the LED chip 1 described above is formed on a substrate in which a pair of terminal electrodes 42a and 42b are formed in advance at both ends. Bonding is performed, and both electrodes are connected by a wire 43.

  In this structure, in order to form the covering body 2 in which the void portion of the porous glass body 21 is filled with the resin 22, as shown in a partial cross-sectional explanatory view in FIG. (This type of chip-type light-emitting device generally has a large substrate in which the electrode film and LED chip of each light-emitting device are provided in the shape of a grid, and after the covering 2 is formed, In the state of cutting along the die), the die bonding of the LED chip 1 and the bonding of the wire 43 are performed, and the whole surface side of the large substrate is immersed in a molding tool (not shown) of a large porous glass body. By immersing the LED chip 1 side, performing a sol-gel reaction in the same process as described above to form a porous glass body 21, and filling the resin 22 in the porous glass body 21 by the same method as described above, Large insulating group Forming a cover member 2 on the entire surface of 21. Thereafter, dicing is performed at the boundary portion A of each light emitting device, and a metal film is applied to the side surface and the back surface of the insulating substrate 41 following the pair of terminal electrodes 42a and 42b to form the electrodes on the side surface and the back surface. The chip type semiconductor light emitting device shown in (a) can be obtained (the electrode on the back surface can be formed in advance by printing or the like in the state of a large substrate).

  In each of the above examples, the YAG phosphor is included in the glass powder to convert the blue light emitted from the LED chip into white light. However, for example, near-UV light is emitted instead of such YAG phosphor. It can be made into a glass powder containing LED chips and phosphor particles that are excited by near-ultraviolet light to emit red, blue, and green, respectively, or can be converted into a desired emission color without becoming white Phosphor particles can also be included. Alternatively, the glass powder can be formed by the above-described sol-gel method without containing the phosphor particles in the glass powder, and the glass powder and the phosphor particles can be aggregated. Furthermore, there is no need to convert the emission color, and even when the light emitted from the LED chip is taken out as it is, the porous glass body 21 formed by the aggregate of the glass powder and the resin 22 filled in the gap are very much. A stable and firm covering 2 can also be formed. Furthermore, even when the emission color is changed, a glass powder that does not contain phosphor particles and phosphor particles can be mixed to form a porous glass body.

  According to the present invention, since a strong package is formed using a porous glass body as a skeleton and is not sintered at a high temperature, an LED chip on which a semiconductor layer is laminated or an electrode is formed on the LED chip. Even things can be adopted without any negative effects. Moreover, since the main component is a glass body, even if the light from the LED chip is ultraviolet light, blue light, or the like, or the output is very large, the coating body will not be discolored or altered by the light or heat. . As a result, the luminescent color does not change with time, and when the light emitting device is mounted on a mounting board, the lead may be heated by soldering or the like, and even if the temperature rises, it may peel off from the covering. Therefore, a very stable covering can be obtained, and the reliability of the semiconductor light emitting device is greatly improved.

  In each of the above examples, the laminated surface side of the semiconductor layer is an example of a light emitting surface. However, when the substrate of the LED chip is a material that transmits light, such as the sapphire substrate, the substrate Needless to say, the back side can be a light emitting surface.

It is a section explanatory view of one embodiment of a semiconductor light emitting device by the present invention. It is a structure explanatory drawing of the LED chip of FIG. It is a figure explaining the manufacturing process of the semiconductor light-emitting device of FIG. It is explanatory drawing which shows other embodiment of the semiconductor light-emitting device by this invention. It is sectional explanatory drawing which shows the structural example of the luminescent color conversion member using the conventional glass.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 LED chip 2 Cover body 21 Porous glass body 22 Resin 211 Glass powder 212 Phosphor particle

Claims (4)

A light-emitting element chip and a covering provided so as to cover at least the light emitting surface side of the light-emitting element chip, and the covering includes phosphor particles for light emission color conversion inside, and the light-emitting element A porous glass body constituting an envelope in which glass powder formed so as to convert light emitted from the chip into a desired emission color is aggregated into a desired shape, and the same refractive index as that of the porous glass body And a semiconductor light emitting device formed by an ultraviolet light resistant resin filled in a gap portion of the porous glass body. The 耐紫external light resin, the semiconductor light-emitting device according to claim 1, wherein ing a silicone resin.   The light emitting element chip is mounted in a recess formed at the tip of a first lead, and a pair of electrodes of the light emitting element chip are electrically connected to the first lead and the second lead, respectively, The semiconductor light-emitting device according to claim 1 or 2, wherein the tip end side of the first and second leads is covered in a dome shape by the covering body.   The light emitting element chip is mounted on an insulating substrate having a pair of terminal electrodes at both ends, and the pair of electrodes of the light emitting element chip are electrically connected to a pair of terminal electrodes provided at both ends of the insulating substrate, respectively. The semiconductor light-emitting device according to claim 1, wherein a connection portion of the light-emitting element chip and the pair of terminal electrodes is covered with the covering body.

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