JP4454243B2 - Substrate temperature adjusting device and substrate temperature adjusting method - Google Patents

Description

[0001]
BACKGROUND OF THE INVENTION
The present invention relates to a substrate temperature adjusting device and a substrate temperature adjusting method, and more particularly to a substrate temperature adjusting device and a substrate temperature that can be cooled and maintained at a high throughput without being cracked or warped of a substrate that has been processed or processed to a high temperature. It relates to the adjustment method.
[0002]
[Prior art]
For example, when a substrate is processed by a surface reaction chemical deposition method, the substrate is heated to a high temperature of 500 to 600 ° C., and a gas such as disilane as a source gas is decomposed on the substrate using the heat of the substrate. Silicon is deposited on the substrate. In a semiconductor manufacturing apparatus using a surface reactive chemical deposition method, it is necessary to cool a substrate having a high temperature before it is transferred to the next processing step in order to increase the throughput. Therefore, a dedicated cooling chamber device has been provided.
[0003]
Patent Document 1 is cited as a document disclosing a dedicated cooling chamber device. The cooling chamber apparatus disclosed in Patent Document 1 is called a cooler, and a dedicated cooling stage is installed therein. The cooling chamber device is, for example, a cooling stage positioned on the lower side, a gas introduction pipe provided in the cooling stage, and a gas introduced by the gas introduction pipe for sealing the space in which the substrate is accommodated. And a gas supply device for supplying gas to the gas introduction pipe.
[0004]
In a conventional cooling method using a cooling chamber apparatus, a substrate heated to 600 ° C. is carried into the cooling chamber and placed on a cooling stage. The cooling stage is previously cooled to a required temperature. Thereafter, the heat transfer gas is introduced through the gas introduction pipe and left for a certain period of time, and the heat transfer action by the heat transfer gas occurs between the cooling stage and the substrate, thereby cooling the substrate.
[0005]
[Patent Document 1]
Japanese National Patent Publication No. 11-506821
[0006]
[Problems to be solved by the invention]
In the conventional cooling chamber apparatus, after cooling, the substrate is cracked on the cooling stage, or the substrate is displaced from the normal position, causing a trouble of stopping the conveyance. This was presumed to be due to the deformation of the substrate caused by cooling, but the deformation itself could not be investigated because the shape restored when the temperature of the entire substrate became a constant low temperature. .
[0007]
However, it is expected that troubles of substrate cracking and displacement after cooling in the cooling chamber apparatus are caused by deformation of the substrate due to rapid cooling.
[0008]
In view of the above problems, an object of the present invention is to perform substrate cooling and the like that do not cause cracks and displacement due to substrate deformation, reduce the substrate deformation, and increase the productivity of the semiconductor manufacturing apparatus. And providing a substrate temperature adjusting method.
[0009]
[Means and Actions for Solving the Problems]
In order to achieve the above object, a substrate temperature adjusting device and a substrate temperature adjusting method according to the present invention are configured as follows.
[0010]
  Claim1The substrate temperature adjusting device of the present invention according to
  An apparatus for adjusting the temperature of the substrate in a predetermined temperature state in the chamber;
  A stage having a temperature adjustment mechanism for placing the substrate and adjusting the temperature of the substrate;
  A chamber monitoring window that enables detection of the deformation state of the substrate on the stage inside the chamber;
  Measuring means for measuring deformation of the substrate through the chamber monitoring window;
  A delay control means for delaying a temperature adjustment start time by the temperature adjustment mechanism for a predetermined time based on a measurement signal output from the measurement means;
  A gas supply device for supplying a heat transfer gas into the chamber;
  Place multiple substrates on the stage in sequence, supply heat transfer gas from the gas supply device with different delay times, and start temperature adjustment based on the deformation change of each of the multiple substrates measured by the measuring means Control means for determining a predetermined time to delay the time point;
  It is characterized by providing.
  Claim2In the substrate temperature adjusting apparatus according to the present invention, the temperature adjusting mechanism for adjusting the temperature of the substrate is processed in the processing chamber provided around the center chamber provided with the substrate transfer robot mechanism. It is an internal cooler for cooling the substrate after processing, and is provided around the center chamber.
  The substrate temperature adjusting method of the present invention according to claim 3 comprises:
  A method of adjusting the temperature of a substrate in a predetermined temperature state in a chamber,
  Detecting the deformation state of the substrate placed on the stage equipped with the temperature adjustment mechanism from the outside of the chamber and measuring, and delaying a temperature adjustment start time by the temperature adjustment mechanism of the stage based on the measurement signal for a predetermined time; ,
  Supplying a heat transfer gas into the chamber for heat transfer between the stage and the substrate;
  A step of sequentially placing a plurality of substrates on a stage and supplying a heat transfer gas from a gas supply device with different delay times;
  Determining a predetermined time for delaying the temperature adjustment start time based on a change in deformation amount of each of the plurality of substrates measured by the measuring means;
  It is characterized by having.
  According to a fourth aspect of the present invention, there is provided the substrate temperature adjusting method according to the above method, wherein the substrate temperature is adjusted after the processing in the processing chamber provided around the center chamber provided with the substrate transfer robot mechanism. It is characterized by cooling the substrate.
[0011]
The above substrate temperature adjusting device is configured to measure the deformation amount of the substrate placed on the stage when adjusting the temperature of the substrate in the placed state to an appropriate temperature with a stage equipped with a temperature adjusting mechanism. The substrate temperature delay time is determined so that the deformation amount of the substrate becomes a desired value, and the temperature adjustment is started based on the substrate temperature delay time. The delay control related to the temperature start time increases the throughput of the substrate processing while preventing the substrate from being cracked or displaced. In particular, it is possible to efficiently cool a substrate that has been heated and formed at a high temperature by surface reactive chemical deposition without causing damage to the substrate when it is rapidly cooled before moving to the next process. is there.
[0014]
  The measurement part above isFor example, optical detection devices such as laser displacement detection devices, LEDs, other optical sensors, CCDs, and other imaging devicesIs. A laser displacement detector is typically used as the meter side. The laser displacement detection device includes a light projecting unit, a light receiving unit, and a signal processing unit. With the configuration using such an optical detection device, a minute deformation amount of the substrate can be accurately detected through the chamber monitoring window.
[0017]
According to the above substrate temperature adjustment method, the amount of deformation is monitored and measured from the outside of the chamber in a state where the substrate that is the target of temperature adjustment such as cooling is placed on the stage, and the temperature adjustment start time is determined. By delaying to the optimum time, it is possible to prevent breakage such as cracking of the substrate and increase the throughput of the substrate processing.
[0021]
DETAILED DESCRIPTION OF THE INVENTION
Preferred embodiments of the present invention will be described below with reference to the accompanying drawings.
[0022]
The configurations, shapes, sizes, and arrangement relationships described in the embodiments are merely schematically shown to the extent that the present invention can be understood and implemented, and the numerical values and the composition (materials) of each component are illustrated. Only. Therefore, the present invention is not limited to the embodiments described below, and can be modified in various forms without departing from the scope of the technical idea shown in the claims.
[0023]
In this embodiment, a cooling chamber apparatus for cooling a substrate heated to a high temperature state (for example, 500 to 600 ° C.) is described as an example of a substrate temperature adjusting apparatus, and a substrate cooling method is described as a substrate temperature adjusting method. Is done.
[0024]
FIG. 1 is a plan view schematically showing the entire semiconductor manufacturing apparatus. In FIG. 1, a semiconductor manufacturing apparatus 10 is a thin film manufacturing apparatus having a cooling stage. In this thin film manufacturing apparatus 10, a center chamber 11 having a substrate transfer robot mechanism (not shown) is provided in the center. Around the center chamber 11, for example, three processing chambers 12 to 14 for performing a process such as film formation on the surface of the loaded substrate are provided. Further, in the center chamber 11, a load lock chamber (LLA) 15 for carrying a substrate (silicon wafer or the like) to be processed into the thin film production apparatus 10, and an aligner chamber 16 for aligning the carried substrates. , An internal cooler (In-Cooler) 17 and a load lock chamber (LLB) 18 for carrying the processed substrate out of the thin film production apparatus 10.
[0025]
A plurality of substrates to be processed by the thin film manufacturing apparatus 10 are managed and transported inside the thin film manufacturing apparatus 10 in a state where, for example, 25 substrates are accommodated in a cassette.
[0026]
In the above, the processing chambers 12 to 14 are provided with a process module for performing a film forming process or the like on the surface of a substrate (not shown) in a predetermined procedure. Each of the processing chambers 12 to 14 is actually provided with an evacuation mechanism, a film formation mechanism, a gas introduction mechanism such as a source gas and a process gas, a power supply mechanism, and the like, but these are not shown.
[0027]
The internal cooler 17 is a chamber dedicated to cooling, and is a chamber device dedicated to cooling provided inside the thin film manufacturing apparatus 10. In the thin film production apparatus 10 according to this embodiment, the internal cooler 17 is heated to, for example, 500 to 600 ° C. by processing the substrate in the processing chambers 12 to 14 (surface treatment by surface reaction chemical deposition or the like). Since the substrate after the processing is in a high temperature state, it is provided for cooling the high temperature substrate in the stage before going to the next step.
[0028]
The internal cooler 17 will be described with reference to FIG. 2, and the structure of the temperature adjustment device for the internal cooler 17 will be clarified. In FIG. 2, the internal cooler 17 is composed of a cooling stage portion 21 and a lid portion 22, and the lid portion 22 is shown in a relatively raised state, that is, in a state where a space (substrate accommodation region) inside the chamber is opened. Yes. The internal cooler 17 includes a chamber device 24 provided with the cooling stage unit 21 into which a substrate 23 to be cooled is loaded and placed, a gas supply device 25, and a vacuum exhaust device 26. .
[0029]
In the chamber device 24, the lid portion 22 is connected to the lower plate 29 by two support columns 27 and 28. The lid portion 22 includes a plurality of support portions 31 for holding the substrate 23 in the substrate accommodation region 30 when the substrate 23 made of silicon or the like is taken in and out of the substrate accommodation region 30 in the chamber device 24. . The support portion 31 is provided so as to extend downward from the inner surface portion of the lid portion 22.
[0030]
The cooling stage unit 21 forms the bottom of the chamber device 24. A cooling device which is an example of a temperature adjusting device is incorporated in the cooling stage unit 21. This cooling device is, for example, a cooler through which a cooling conduit passes. A cooling medium is supplied to the cooling device from the outside. A cooling medium supply device 32 that supplies a cooling medium to the cooling device is provided outside.
[0031]
When the temperature adjusting device is a heating device, a heater such as a heating lamp or a heating coil is used.
[0032]
The chamber device 24 is provided with a driving device 33 that moves the lower plate 29 up and down with respect to the cooling stage portion 21 maintained at a certain height position (for example, the position shown in FIG. 2). . When the lower plate 29 is moved up and down by the driving device 33, the lid portion 22 is also moved up and down simultaneously via the support columns 27 and 28. In the state shown in FIG. 2, the lid portion 22 is moved upward and the substrate housing area 30 is open.
[0033]
Further, when the substrate 23 is cooled, the lid portion 22 moves downward, the lid portion 22 and the cooling stage portion 21 come into contact with each other, and the substrate accommodation region 30 is closed. This state is shown in FIG.
[0034]
When the substrate 23 is cooled, the lid portion 22 and the cooling stage portion 21 are brought into close contact with each other as shown in FIG. FIG. 3 shows the main part of the chamber device 24 in a state where the lid part 22 is moved downward and the lid part 22 and the cooling stage part 21 are brought into close contact with each other. At this time, the substrate 23 is kept on the stage upper surface of the cooling stage unit 21. Further, in this state, the substrate accommodation region 30 is introduced with heat transfer gas from the gas supply device 25 and is decompressed as required by the vacuum exhaust device 26 to exhaust the heat transfer gas. Is done. Grooves 34 are formed in an appropriate pattern (parallel, concentric circles, or radial shape) on the upper surface of the cooling stage 21. This groove 34 is a groove for flowing heat transfer gas. The shape pattern and dimensions of the groove 34 can be arbitrarily set.
[0035]
2 and 3, an opening 41 is formed at an appropriate position of the plate member of the lid portion 22, and the opening 41 is formed of, for example, a disc made of a quartz plate material via a sealing O-ring 42. A vacuum window 43 is provided. The vacuum window 43 has translucency. By providing the vacuum window 43, the inside of the chamber device 24 can be viewed. When the lid portion 22 and the cooling stage portion 21 are brought into close contact with each other and the substrate accommodation region 30 is formed as a sealed space, the distance from the stage-like surface in a state where the substrate accommodation region 30 is in contact with the protrusion on the upper surface of the stage of the cooling stage portion 21. A part of the substrate 23 placed on the cooling stage unit 21 can be seen through the vacuum window 43 with the opening.
[0036]
In the chamber device 24 of the internal cooler 15, a laser displacement detection device 44 is provided above the vacuum window 43. The laser displacement detector 44 includes a laser projector 45 and a laser receiver 46 provided in a predetermined arrangement relationship. The laser beam 47 emitted from the laser projector 45 is applied to the substrate 23 through the vacuum window 43, and then a reflection action is generated on the substrate 23 to enter the laser receiver 46. The deformation amount relating to the deformation state of the substrate 23 based on the laser light detected by the laser receiver 46 is output as an electrical signal based on the processing of a built-in signal processing unit (not shown) and is input to the control unit 48. . The controller 48 receives the deformation amount of the substrate as an electric signal and stores it in a built-in memory as deformation amount data. At the same time, the control unit 48 measures the transition state of the substrate deformation amount based on the storage data obtained under different conditions regarding the cooling of the plurality of substrates, and monitors the change in the deformation amount. Then, the start point (cooling delay time) of the cooling operation of the cooling device is controlled. Therefore, the control unit 48 includes a memory and a control unit that performs various signal processing. The control at the start of the cooling operation of the cooling device relates to the control of the cooling delay time. The operation control of the cooling device of the cooling stage unit 21 includes the cooling medium supply timing of the cooling medium supply device 32, the temperature of the cooling medium, the introduction timing of the heat transfer gas by the gas supply device 25, the introduction pressure of the heat transfer gas, and the vacuum exhaust. This is performed by appropriately setting and controlling at least one of the exhaust timing of the substrate housing space 30 by the apparatus 26. The operating state of the cooling device of the cooling stage unit 21, that is, the supply of the cooling medium by the cooling medium supply device 32 is normally performed constantly, and the cooling device is constantly in the cooling state.
[0037]
In FIG. 3, a mechanism 51 is an apparatus part for supporting the cooling stage unit 21 and holding it at a fixed height position. A mechanism 52 is attached to the upper part of the mechanism 51, and a laser displacement detection device 44. There is a device part for supporting. The mechanism 52 has a hole 52a through which laser light passes. In FIG. 3, illustration of the peripheral part shown in FIG. 2 is omitted.
[0038]
Further, as shown in FIG. 3, since the support device is constituted by the mechanisms 51 and 52, the laser displacement detection device 44 is provided at a position of a constant invariable distance with respect to the cooling stage unit 51 at a constant height position. ing. Under such a positional relationship, the optical path of the laser beam 47 is set to be constant. When the lid portion 22 moves down as described above and comes into contact with the stage upper surface of the cooling stage portion 21, the laser light 47 emitted from the laser projection portion 45 is exactly the surface of the substrate 23 (the surface in the case of a silicon substrate, In the case of a glass substrate, the light is reflected by the front surface and the back surface and is incident on the laser light receiving unit 46. In this way, the laser displacement detection device 44 can detect the amount of deformation of the substrate 23 in the state of being placed on the cooling stage unit 21 when cooling.
[0039]
In the above, the vacuum window 43 is provided substantially parallel to the substrate 23 in the opening 41. A gap between the substrate accommodation region 30 formed by the lid portion 22 and the cooling stage portion 21 is, for example, about 2 mm. When the substrate 23 is deformed by the cooling action of the cooling device built in the cooling stage unit 21, the deformation amount is detected by the laser displacement detecting device 44. The deformation amount of the substrate is detected at the incident position of the laser beam 47 reflected from the substrate 23 on the incident surface of the laser receiver 46.
[0040]
FIG. 4 shows an enlarged part of the cooling stage unit 21. A plurality of minute protrusions 53 are formed on the surface of the cooling stage portion 21. The protrusion 53 is provided to provide a necessary distance between the front surface of the cooling stage unit 21 and the back surface of the substrate 23 when the substrate 23 is placed on the cooling stage unit 21. The protrusion 53 is a protrusion formed of, for example, quartz, and its height is preferably 0.5 mm. The number of protrusions 53 is preferably three. As described above, the distance between the back surface of the substrate 23 and the upper surface of the cooling stage unit 21 is maintained at a required distance by the protrusion 53, so that the position between the cooling stage unit 21 and the substrate 23 at each position within the surface of the substrate 23 is maintained. There is no variation in distance. As a result, the difference in heat transfer efficiency between the substrate 23 and the cooling stage unit 21 is reduced, and the deformation amount of the substrate 23 can be reduced.
[0041]
With reference to FIG. 5, the control at the start time of the cooling operation by the cooling stage unit 21 based on the control unit 48 will be described. FIG. 5 is a graph showing the dependence of substrate deformation on the cooling delay time. In FIG. 5, the horizontal axis represents the cooling delay time, and the vertical axis represents the maximum deformation amount (relative value) of the substrate. A characteristic 61 shown in FIG. 5 is a characteristic related to the silicon substrate. According to the characteristic 61, when the substrate 61 in the high temperature state is placed on the stage upper surface of the cooling stage unit 21 and cooling is started by the cooling action by the cooling stage unit 21, the start time is determined as the maximum deformation of the substrate. It can be seen that if the amount is delayed by about 15 seconds so that the amount is smaller than 0.1, for example, the occurrence of substrate cracking and misalignment can be suppressed.
[0042]
The acquisition of the characteristic 61 shown in FIG. 5 will be described in detail. First, for example, a test cassette is prepared. As the test cassette, a normal cassette may be used, or a specially prepared cassette may be used. For example, five test substrates are prepared in the test cassette. Regarding a plurality of substrates including a test substrate mounted on a test cassette, first, a first test substrate is set, the lid portion 22 and the cooling stage portion 21 are brought into close contact with each other, the substrate accommodation region 30 is closed, and the cooling stage portion 21 To be placed. Thereafter, the heat transfer gas is introduced from the gas supply device 25 with the cooling delay time being approximately 0 seconds, and the data obtained by the laser displacement detection device 44 through the vacuum window 43 for the maximum deformation amount generated in the test substrate at that time is the measurement point 61a. It is. Thereafter, the heat transfer gas in the substrate housing region 30 is exhausted by the vacuum exhaust device 26, the substrate housing region 30 is opened, and then the second test substrate is set, and is placed on the cooling stage unit 21 in the same manner as described above. Allow to cool. In the cooling of the second test substrate, the heat transfer gas is introduced with a cooling delay time of about 10 seconds, and the data of the maximum deformation obtained in the same manner as described above is the measurement point 61b. After that, the heat transfer gas in the substrate accommodation region 30 is exhausted by the vacuum exhaust device 26, the substrate accommodation region 30 is opened, and then the third test substrate is set. Place and cool. In the cooling of the third test substrate, the heat transfer gas is introduced with a cooling delay time of about 15 seconds, and the data of the maximum deformation obtained in the same manner as described above is the measurement point 61c. Similarly, the measurement point 61d is obtained for the fourth test board, and the measurement point 61e is obtained for the fifth test board.
[0043]
When the characteristic 61 is obtained under the measurement as described above, the control unit 48 performs the subsequent original operation based on the change in the maximum deformation amount regarding the plurality of test substrates based on the characteristic 61 formed by the measurement points 61a to 61e. For example, the optimum cooling delay time as the timing of introducing the heat transfer gas in the substrate cooling for 25 substrates accommodated in the substrate cassette is determined as about 15 seconds. In this way, an optimal cooling delay time is set.
[0044]
As described above, according to the substrate cooling control operation based on the control unit 48, several cooling delay times are first set for a plurality of test substrates accommodated in the test cassette, and cooling is repeatedly performed. When the change of the maximum deformation amount of the test substrate is monitored using the data relating to the substrate deformation amount obtained based on the detection of the laser displacement detection device 44 regarding the cooling of the test substrate, and the maximum deformation amount is preferably smaller than 0.1 The cooling delay time is determined as the optimum cooling delay time, and thereafter, the cooling operation by the cooling stage unit 21, the gas supply device 25, the vacuum exhaust device 26, etc. is started using the cooling delay time. The cooling delay time is about 15 seconds in the case of having the characteristics shown in FIG. This approximately 15 seconds is the optimum cooling delay time.
[0045]
Accordingly, in the conventional internal cooler, when a high-temperature substrate is carried in, the cooling operation is started almost simultaneously (with a cooling delay time of 0 second). On the other hand, the internal cooler 17 according to this embodiment is started. Then, after the board | substrate 23 is carried in, except the board | substrate cooling by a test board | substrate, Preferably, about 15 second is delayed and cooling operation | movement will be started. In the above description, the optimum cooling delay time is obtained using the dedicated test cassette and test board, but the method for obtaining the cooling delay time is not limited to this. For example, it is possible to obtain the cooling delay time using an original cassette containing 25 substrates and using some of the 25 substrates.
[0046]
The setting of the cooling delay time is arbitrarily changed according to conditions such as the type of thin film, and is preferably determined when cooling is performed for each type of thin film. The maximum length of the delay time is preferably about 30 seconds in consideration of the throughput (production efficiency). However, the cooling delay time is appropriately determined in consideration of production efficiency.
[0047]
FIG. 6 shows a comparison between the conventional cooling process (A) and the cooling process (B) according to the present embodiment. As shown in FIG. 4A, according to the conventional cooling process, the cooling process 62 is started at time t1 almost simultaneously with the completion of the substrate loading (step S11). When the cooling process 62 ends at time t2, the substrate is unloaded (step S12). On the other hand, according to the cooling process according to the present embodiment as shown in (B), when the substrate loading is completed at time t1 (step S13), the cooling process 63 is started at time t3 with a delay of the cooling delay time T0. (Step S14). When the cooling process 63 ends at time t4, the substrate is unloaded (step S12). As described above, according to the cooling process in the internal cooler 17 according to the present embodiment, the desired time cooling process 63 is delayed based on the control of the cooling delay time by the control unit 48.
[0048]
Each of the cooling processes 62 and 63 will be described in more detail. As shown in a block 64 in FIG. 6, a heat transfer gas introduction process 65, a cooling execution process 66, a heat transfer gas roughing exhaust process 67, And a precision exhaust process 68. For characteristic 69 in block 64, the horizontal axis represents time and the vertical axis represents pressure. Therefore, the characteristic 69 indicates a change in the pressure level in the chamber apparatus 24 related to the substrate cooling.
[0049]
According to the above-described method for cooling a high temperature substrate according to the present embodiment, the high temperature substrate 23 heated to about 600 ° C. is carried into the chamber device 24 of the internal cooler 17, and the three protrusions on the upper surface of the stage of the cooling stage unit 21 are loaded. The substrate housing area 30 in the chamber device 24 is evacuated and the substrate 23 is stored. After that, based on the information on the cooling delay time obtained for the test substrate as described above, a heat transfer gas (Ar gas or the like) is introduced from the gas introduction device 25 after waiting for a maximum of 30 seconds, for example, and the pressure is set to 4 KPa, for example. Then, cooling was started and the state was maintained for 45 seconds.
[0050]
As a result, according to the characteristic 81 in the measurement diagram shown in FIG. 7, no deformation of the substrate 23 was observed, and the substrate 23 could be cooled with high efficiency. The characteristic 81 is a characteristic diagram obtained based on the combination of the protrusion 53 and the cooling delay time. According to the characteristic 81, the substrate is hardly deformed. Incidentally, the characteristic 82 is the case of the conventional cooling method, and the characteristic 83 is the case of only the quartz projection 53 (no cooling delay time). In the graph of FIG. 7, the horizontal axis represents the slot number, and the vertical axis represents the maximum deformation amount of the substrate.
[0051]
In the above description, an example of efficient and rapid substrate cooling in which the internal cooler 17 does not cause the substrate cracking or misalignment of the high-temperature substrate has been described. However, the present invention also applies to the case where the low-temperature substrate is similarly rapidly heated to a predetermined temperature. Of course, can be applied. The temperature adjustment of the present invention is also effective for displacement and deformation of the substrate that occurs when the temperature changes between the front and back surfaces of the substrate.
[0052]
In the above embodiment, the deformation of the substrate is monitored by the laser displacement detection device 44 through the monitoring vacuum window 43. However, as the monitoring means, LEDs, other sensors, CCD, other imaging devices, etc. These optical devices can be used.
[0053]
【The invention's effect】
As is apparent from the above description, according to the present invention, it is possible to detect the amount of deformation of a substrate from the outside in an apparatus or method for adjusting the temperature (cooling or heating) of the substrate at a predetermined temperature in the chamber. Using the chamber monitoring window, the measurement unit for measuring the deformation amount of the substrate, and the delay control unit for delaying the temperature adjustment start time by the temperature adjustment mechanism based on the measurement signal by an optimum predetermined time. Since the optimal delay time for temperature adjustment can be set using the test board at the stage before adjustment, the board can be cooled without causing cracks or misalignment due to board deformation. This can reduce the productivity of the semiconductor manufacturing apparatus. Further, the effect can be enhanced by a combination of the above delay control and a plurality of protrusions provided on the substrate mounting surface of the stage.
[Brief description of the drawings]
FIG. 1 is a schematic plan view showing an example of a semiconductor manufacturing apparatus in which a substrate temperature adjusting device (cooling chamber device) according to the present invention is incorporated.
FIG. 2 is a longitudinal sectional view specifically showing a configuration of a substrate temperature adjusting apparatus according to the present invention.
FIG. 3 is a view showing a vertical cross-sectional configuration and related devices for explaining a configuration of a characteristic part of a substrate temperature adjusting device according to the present invention.
FIG. 4 is an enlarged view showing a part of the surface of the cooling stage of the stage unit.
FIG. 5 is a graph showing the dependence of substrate deformation on cooling delay time.
FIG. 6 is a diagram showing a comparison between a conventional cooling process (A) and a cooling process (B) according to the present embodiment.
FIG. 7 is a graph for comparing a conventional cooling method, a cooling method using a quartz protrusion, and a cooling method using a combination of a quartz protrusion and a cooling delay time.
[Explanation of symbols]
10 Thin film production equipment
11 Center chamber
12-14 processing chamber
17 Internal cooler
21 Cooling stage
22 Lid
23 Substrate
24 Chamber equipment
27, 28 Prop section
30 Substrate accommodation area
32 Cooling medium supply device
43 Vacuum window
44 Laser displacement detector
48 Control unit

Claims (4)

An apparatus for adjusting the temperature of the substrate in a predetermined temperature state in the chamber;
A stage on which the substrate is mounted and a temperature adjustment mechanism for adjusting the temperature of the substrate;
A chamber monitoring window enabling detection of a deformation state of the substrate on the stage inside the chamber;
Measuring means for measuring deformation of the substrate through the chamber monitoring window;
Delay control means for delaying a temperature adjustment start time by the temperature adjustment mechanism by a predetermined time based on a measurement signal output from the measurement means;
A gas supply device for supplying heat transfer gas into the chamber;
A plurality of the substrates are sequentially placed on the stage, and the heat transfer gas is supplied from the gas supply device with different delay times, and the amount of deformation of each of the plurality of substrates measured by the measuring means is Control means for determining the predetermined time to delay the temperature adjustment start time based on the change;
A substrate temperature adjusting device comprising: The temperature adjusting mechanism for adjusting the temperature of the substrate is an internal cooler for cooling a processed substrate processed in a processing chamber provided around a center chamber provided with a substrate transfer robot mechanism, and The substrate temperature adjusting device according to claim 1 , wherein the substrate temperature adjusting device is provided around the center chamber. A method of adjusting the temperature of a substrate in a predetermined temperature state in a chamber,
A step of detecting and measuring a deformation state of the substrate placed on a stage equipped with a temperature adjustment mechanism from the outside of the chamber; and a temperature adjustment start time by the temperature adjustment mechanism of the stage based on a measurement signal for a predetermined time A delaying step;
Supplying a heat transfer gas into the chamber for heat transfer between the stage and the substrate;
A step of sequentially placing a plurality of the substrates on the stage and supplying the heat transfer gas from the gas supply device with different delay times;
Determining the predetermined time for delaying a temperature adjustment start time based on a change in deformation amount of each of the plurality of substrates measured by the measuring means;
A substrate temperature adjusting method comprising: Temperature control of the substrate, the substrate according to claim 3, characterized in that cooling the substrate after treatment is processed in the processing chamber provided around the center chamber with a substrate carrying robot mechanism Temperature adjustment method.

Images