JP4451790B2 - Semiconductor device, semiconductor device manufacturing method, and card-type recording medium - Google Patents

Description

  The present invention relates to a semiconductor device in which a plurality of semiconductor chips are bonded to a substrate, a manufacturing method thereof, and a card-type recording medium using the same.

  A semiconductor device in which a plurality of semiconductor chips are bonded to a substrate is conventionally known (see, for example, Patent Document 1). FIG. 7 is a front view of a conventional semiconductor device 90. The semiconductor device 90 includes a memory substrate 93. Bare IC chips 91 and 92 are flip-chip mounted on the upper and lower surface patterns of the memory substrate 93 via bumps 98 on both surfaces of the memory substrate 93, respectively. A memory substrate 96 is disposed on the bare IC chip 92 side of the memory substrate 93. On both surfaces of the memory substrate 96, bare IC chips 94 and 95 are flip-chip mounted on the upper and lower surface patterns of the memory substrate 96 via bumps 98, respectively. The bare IC chip 94 is disposed at a position facing the bare IC chip 92. A plurality of conductive balls 97 made of copper or the like are provided between the memory substrate 93 and the memory substrate 96. The conductor balls 97 hold the memory substrate 93 and the memory substrate 96 substantially in parallel, and electrically connect the upper and lower surface patterns of the memory substrate 93 and the upper and lower surface patterns of the memory substrate 96.

  In addition, a CSP memory IC packaged in a chip size package (CSP) is mounted in a recess provided on the surface of the substrate, and a TSOP memory IC packaged by a thin small outline package (TSOP) having lead wires only on the left and right sides. A configuration is known in which a CSP memory IC and a recess are mounted on a substrate so as to cover the upper side of the recess (see Patent Document 2).

Furthermore, in a multi-chip module in which a plurality of semiconductor chips are accommodated and these semiconductor chips are electrically connected to an electrical insulating substrate having a predetermined electrical wiring pattern by bumps, a multistage recess is formed in the electrical insulating substrate. In addition, a configuration is known in which each semiconductor chip is accommodated in the recess in the vertical direction so as to be spaced apart from each other (see Patent Document 3).
Japanese Patent Laid-Open No. 2002-207986 (FIG. 7) JP 2002-204053 A (FIG. 1) JP-A-5-275611 (FIGS. 1 to 4)

  However, when a semiconductor device in which the memory modules having the bare IC chips mounted on both sides shown in FIG. 7 are joined with a conductive ball is mounted on a small memory card having a predetermined size, the thickness is limited, Although it is necessary to make the semiconductor device thinner, there is a problem that it is difficult to further reduce the diameter of the conductor ball, and that the number of conductor balls increases due to the increase in the number of pins of the bare IC chip, resulting in an increase in cost.

  Further, in the configuration in which the IC chip is accommodated in the recess provided on one side of the substrate as in the configurations of Patent Document 2 and Patent Document 3, when three or more IC chips are to be stacked, the electrical wiring pattern of the IC chip There is a problem that the configuration of the system becomes complicated.

  An object of the present invention is to provide a semiconductor device, a method for manufacturing the semiconductor device, and a card-type recording medium that can solve the problems of the conventional example.

The semiconductor device of the present invention has a concave portion that vertically passes between both end surfaces along the long side direction at the central portion of the upper and lower surfaces by forming both side portions in the long side direction thicker than the central portion. A configured substrate; a first semiconductor chip housed in an upper recess of the substrate and bonded to a recess upper surface pattern of the substrate via a bump; and disposed on both sides of the upper surface pattern on both sides of the substrate disposed above the first semiconductor chip. A second semiconductor chip bonded via a bump on the upper surface of the part; a third semiconductor chip housed in a lower concave portion of the substrate and bonded to the lower surface pattern of the concave portion of the substrate via the bump; and a lower side of the third semiconductor chip And a fourth semiconductor chip which is bonded to the lower surface pattern on both sides of the substrate via bumps on the lower surface of both sides, and a set of first and second semiconductor chips, a set of third and fourth semiconductor chips, At least before The second semiconductor chip covers the first semiconductor chip when viewed from the direction perpendicular to the upper surface of the substrate, and the first and second semiconductor chips are both longer when viewed from the direction perpendicular to the upper surface of the substrate. It has a body shape and is arranged in a direction in which the longitudinal directions intersect each other .

According to this configuration, first, the both sides in the long side direction of the substrate are formed thicker than the central part, thereby vertically passing between both end surfaces along the long side direction in the central part of the upper and lower surfaces. since it is configured a recess for the fourth semiconductor on the lower side of the third semiconductor chip second semiconductor chip is arranged on the upper side of the first semiconductor chip accommodated in the upper recess of the substrate, it was housed within a lower recess of the substrate A chip can be placed. For this reason, the semiconductor device after lamination can be thinned. In addition, since four semiconductor chips are divided into two pieces on each side of the substrate and bonded and laminated via bumps , the wiring does not become dense unlike the configuration in which four semiconductor chips are laminated on one side of the substrate. .

The second semiconductor chip, since the disposed so as to cover the first semiconductor chip when viewed in the direction perpendicular to the upper surface of the substrate, even if the shape of the semiconductor chip are different sizes, the first semiconductor a smaller shape The chip can be accommodated in the upper concave portion, the larger one can be disposed as the second semiconductor chip so as to cover the first semiconductor chip, and the first and second semiconductor chips can be disposed at a high density within a small area. it can.

Further, at least a first and a second set semiconductor chip, when viewed from the direction perpendicular to the upper surface of the substrate, both have a cuboid shape, since their longitudinal direction are arranged in a direction intersecting with each other, even when the shape of the semiconductor chip are the same, and is configured to overlap a part, it is possible to thin the semiconductor device.

  Preferably, both side portions of the substrate have step portions in the upper concave portions, and the upper surface of the first semiconductor chip is bonded to the upper surface of the step portion by wire bonding. By providing the step portion, the first semiconductor chip can be easily bonded to the upper surface pattern in the upper concave portion by wire bonding.

  The height of the upper surface of the stepped portion is preferably lower than the height of the upper surface of the first semiconductor chip. This is because the first semiconductor chip can be easily joined to the step portion by wire bonding.

  It is preferable to have a first reinforcing member that is provided on the first semiconductor chip and supports the second semiconductor chip. This is to reinforce the strength of the second semiconductor chip disposed across the upper concave portion of the substrate.

  It is preferable to have a second reinforcing member provided on the bottom surface of the upper concave portion of the substrate and supporting the first semiconductor chip. This is because the first semiconductor chip bonded to the step portion can be supported by wire bonding.

In the method of manufacturing a semiconductor device according to the present invention, both side portions in the long side direction are formed thicker than the central portion, thereby vertically passing between both end surfaces along the long side direction in the central portion of the upper and lower surfaces. The first semiconductor chip is accommodated in the upper concave portion of the substrate that constitutes the concave portion so that the longitudinal directions thereof coincide with each other, and joined to the concave upper surface pattern of the substrate via the bump , and the second semiconductor chip is bonded to the lower concave portion of the substrate. Are accommodated so that their longitudinal directions coincide with each other, bonded to the concave bottom surface pattern of the substrate via bumps , and the third semiconductor chip is disposed on the upper side of the first semiconductor chip so that both side portions are formed on the upper surface pattern on both sides of the substrate. bonded via the bumps on the upper surface, to the fourth semiconductor chip disposed on the lower side of the third semiconductor chip bonded via the bumps on both sides the lower surface on both the lower surface pattern of the substrate, first, second semiconductor chip Pair and the second , At least in the former of the fourth semiconductor chip set, the second semiconductor chip covers the first semiconductor chip when viewed from the direction perpendicular to the upper surface of the substrate, and both have a rectangular parallelepiped shape. The second semiconductor chips are arranged in a direction in which their longitudinal directions intersect each other when viewed from a direction perpendicular to the upper surface of the substrate .

According to this configuration, by forming both side portions in the long side direction of the substrate thicker than the central portion, the concave portion that vertically passes between both end surfaces along the long side direction in the central portion of the upper and lower surfaces. Therefore, the third semiconductor chip is disposed above the first semiconductor chip accommodated in the upper concave portion of the substrate, and the fourth semiconductor chip is disposed below the second semiconductor chip accommodated in the lower concave portion of the substrate. Can be arranged. For this reason, the semiconductor device after lamination can be thinned. Also, since four semiconductor chips are divided into two pieces on each side of the substrate and bonded and laminated via bumps , the wiring may be dense as in the configuration where four semiconductor chips are laminated on one side of the substrate. Absent. In addition, since the second semiconductor chip is disposed so as to cover the first semiconductor chip when viewed from the direction perpendicular to the upper surface of the substrate, even if the shape of the semiconductor chip is different, the smaller one is used as the first semiconductor chip. The chip can be accommodated in the upper concave portion, the larger one can be disposed as the second semiconductor chip so as to cover the first semiconductor chip, and the first and second semiconductor chips can be disposed at a high density within a small area. it can. Furthermore, since at least the first and second semiconductor chip sets have a rectangular shape when viewed from the direction perpendicular to the upper surface of the substrate, and their longitudinal directions are arranged in a direction crossing each other, Even when the shape of the semiconductor chip is the same, the semiconductor device can be thinned by overlapping parts.

The card-type recording medium of the present invention has a concave portion that vertically passes between both end surfaces along the long side direction by forming both side portions in the long side direction thicker than the central portion. A first memory chip which is accommodated in the upper concave portion of the memory substrate so that their longitudinal directions coincide with each other and bonded to the upper surface pattern of the concave portion of the memory substrate via bumps, and A second memory chip disposed on the upper side and bonded to the upper surface pattern on both sides of the memory substrate via bumps on the upper surface of both sides, and accommodated in the lower concave portion of the memory substrate so that their longitudinal directions coincide with each other a third memory chip is bonded via bumps to the recess bottom surface pattern of the substrate, bonding via the bumps on both sides lower surface 3 is disposed on the lower side of the memory chips on both sides lower surface pattern of the memory substrate The fourth and a memory chip, a first, a set of the second semiconductor chip, in the third, at least the former of the set of fourth semiconductor chip, the second semiconductor chip, from the direction perpendicular to the upper surface of the substrate The first semiconductor chip covers the first semiconductor chip as viewed, and the first and second semiconductor chips both have a rectangular shape when viewed from the direction perpendicular to the upper surface of the substrate, and their longitudinal directions intersect each other. The arranged memory module is mounted on one surface of the base substrate, and an IC chip for controlling the operation of the first to fourth memory chips is mounted on the other surface of the base substrate, and the whole is housed in a package. It is characterized by that.

According to this configuration, by forming both side portions in the long side direction of the substrate thicker than the central portion, the concave portion that vertically passes between both end surfaces along the long side direction in the central portion of the upper and lower surfaces. The second memory chip is disposed above the first memory chip accommodated in the upper recess of the memory substrate, and the fourth memory is disposed below the third memory chip accommodated in the lower recess of the memory substrate. A chip can be placed. Therefore, the memory module after the first to fourth memory chips are stacked can be thinned, and a thin card type recording medium can be obtained. In addition, four memory chips are divided into two on each side of the memory substrate and bonded and laminated via bumps , so that the wiring is dense as in the configuration in which four memory chips are stacked on one side of the memory substrate. A thin card-type recording medium that does not occur can be obtained. In addition, since the second semiconductor chip is disposed so as to cover the first semiconductor chip when viewed from the direction perpendicular to the upper surface of the substrate, even if the shape of the semiconductor chip is different, the smaller one is used as the first semiconductor chip. The chip can be accommodated in the upper concave portion, the larger one can be disposed as the second semiconductor chip so as to cover the first semiconductor chip, and the first and second semiconductor chips can be disposed at a high density within a small area. it can. Furthermore, since at least the first and second semiconductor chip sets have a rectangular shape when viewed from the direction perpendicular to the upper surface of the substrate, and their longitudinal directions are arranged in a direction crossing each other, Even when the shape of the semiconductor chip is the same, the semiconductor device can be thinned by overlapping parts.

  According to the present invention, it is possible to provide a semiconductor device having a small thickness and a simple configuration at low cost.

  FIG. 1 is a schematic perspective view of the small memory card 200 according to the present embodiment with the case removed, and FIG. 2A is a plan view of the main part of the memory module 100 provided in the small memory card 200. 2B is a front view thereof, and FIG. 3 is a side sectional view of the small memory card 200. FIG.

  The small memory card 200 includes a base substrate module 23. The base substrate module 23 has a rectangular base substrate 10, and the memory module 100 is mounted on an upper surface pattern 39 formed on the upper surface 11. The memory module 100 and the base substrate module 23 are accommodated in a package 14 including an upper case 15A and a lower case 15B. On the lower surface 12 of the base substrate 10, an ASIC IC chip 13 and a microprocessor IC chip 13A are bonded to the lower surface pattern of the base substrate 10 at a predetermined interval. A chip capacitor 34 and a chip resistor 35 are bonded to the upper surface pattern of the base substrate 10 on the upper surface 11 of the base substrate 10.

  A large number of through holes 24 are formed along each long side of the base substrate 10, and a large number of through holes 25 facing the through holes 24 are formed in the memory substrate 5 of the memory module 100. A number of conductive wires 26 penetrating through the through holes 24 of the base substrate 10 and the through holes 25 of the memory substrate 5 are provided. The conductive wires 26 electrically connect the upper and lower surface patterns of the base substrate 10 and the upper and lower surface patterns of the memory substrate 5.

  A card electrode 36 of a small memory card is provided on the lower surface 12 of the base substrate 10 so as to be exposed from the upper case 15A and the lower case 15B.

  The memory substrate 5 is formed with the upper side recesses 1 and the lower side recesses 2 in the central portions 30 of the upper and lower surfaces 3 and 4 by forming both side portions 29 thicker than the central portion 30. The upper concave portion 1 and the lower concave portion 2 respectively penetrate the both end surfaces 27 of the memory substrate 5 along the long side direction.

  Two memory chips 6 are accommodated in the upper side recess 1 of the memory substrate 5 along the long side direction, and are joined to the recess upper surface pattern 37 of the memory substrate 5 via bumps 28. The memory chip 8 is bonded to both side surface upper surface patterns 38 formed on the both side portions 29 via the bumps 31 so as to cover the memory chip 6.

  In the lower recess 2 of the memory substrate 5, two memory chips 7 are accommodated corresponding to the memory chip 6, and are joined to the recess lower surface pattern of the memory substrate 5 via bumps 32. The memory chip 9 is bonded to both side portion lower surface patterns formed on both side portions 29 via bumps 33 so as to cover the memory chip 7.

  The small memory card 200 configured as described above is manufactured as follows. First, the memory chip 6 is bonded to the recess upper surface pattern 37 in the upper recess 1 of the memory substrate 5. Then, the memory chip 7 is bonded to the recess lower surface pattern in the lower recess 2. Next, the memory chip 8 is bonded to the upper surface patterns 38 on both side portions 29. Thereafter, the memory chip 9 is bonded to the lower surface patterns on both side portions 29 to complete the memory module 100.

  Then, the memory module 100, the chip capacitor 34, and the chip resistor 35 are joined to the upper surface 11 of the base substrate 10, and the ASIC IC chip 13, the microprocessor IC chip 13A, and the card electrode 36 are mounted on the lower surface 12 of the base substrate 10. . Next, the upper case 15 </ b> A and the lower case 15 </ b> B of the package 14 are attached to the base substrate 10 so that the card electrode 36 is exposed and substantially entirely covered, thereby completing the small memory card 200.

  FIG. 4 is a main part plan view of a first modification according to the present embodiment. As shown in FIG. 4, two memory chips 8A having the same rectangular shape are arranged in a direction orthogonal to each other, and bonded to the concave upper surface pattern of the upper concave portion 1 and the upper surface patterns on both side portions of the both side portions 29, respectively. May be.

  FIG. 5 is a front view of a second modification according to the present embodiment. As shown in FIG. 5, a reinforcing member 21 that supports the memory chip 8 may be provided on the memory chip 6. Further, a reinforcing member 21 may be provided on the memory chip 7 to support the memory chip 9.

  FIG. 6 is a front view of a third modification according to the present embodiment. A reinforcing member 22 that supports the memory chip 6 </ b> A is provided on the bottom surface 19 of the upper recess 1 of the memory substrate 5. Both side portions 29 of the memory substrate 5 have step portions 16 on the upper concave portion 1 side. The upper surface of the memory chip 6 </ b> A is joined to the concave upper surface pattern of the upper surface 17 of the stepped portion 16 by a conductor wire 18 for wire bonding. The height H1 of the upper surface 17 of the stepped portion 16 is lower than the height H2 of the upper surface of the memory chip 6A. A reinforcing member 21A for supporting the memory chip 8B is provided on the memory chip 6A. The upper surface of the memory chip 8B is joined to the upper surface patterns on both side portions 29 by the wire 18 of wire bonding. The lower side of both side portions 29 is configured in the same manner as the upper side as shown in FIG.

  The present invention can be applied to a semiconductor device in which a plurality of semiconductor chips are bonded to a substrate, a manufacturing method thereof, and a card-type recording medium using the same.

It is a schematic perspective view in the state except the case of the small memory card concerning this embodiment. (A) is a principal part top view of the memory module provided in the small memory card based on this Embodiment, (b) is the front view. It is side surface sectional drawing of the small memory card based on this Embodiment. It is a principal part top view of the 1st modification concerning this Embodiment. It is a front view of the 2nd modification concerning this embodiment. It is a front view of the 3rd modification concerning this embodiment. It is a front view of the conventional semiconductor device.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 Upper side recessed part 2 Lower side recessed part 3 Upper surface 4 Lower surface 5 Memory substrate 6, 7, 8, 9 Memory chip 10 Base substrate 11 Upper surface 12 Lower surface 13 IC chip 14 Package 15A Upper case 15B Lower case 16 Step part 17 Upper surface 18 Conductor wire 19 Bottom surface 20 Upper surface 21, 22 Reinforcing member 23 Base substrate module 37 Recessed surface pattern 38 Both side surface pattern 100 Memory module 200 Small memory card

Claims (7)

By forming both side portions in the long side direction thicker than the center portion, a substrate having a concave portion that vertically passes between both end surfaces along the long side direction in the central portion of the upper and lower surfaces, and A first semiconductor chip that is accommodated in the upper concave portion so that their longitudinal directions coincide with each other and bonded to the concave upper surface pattern of the substrate via bumps, and an upper surface pattern on both sides of the substrate that is disposed on the upper side of the first semiconductor chip A second semiconductor chip bonded to the upper surface of both sides via bumps, and a third semiconductor chip which is accommodated in the lower concave portion of the substrate so that their longitudinal directions coincide with each other and bonded to the concave pattern of the concave portion of the substrate via the bumps . A semiconductor chip; and a fourth semiconductor chip disposed below the third semiconductor chip and bonded to the lower surface patterns on both sides of the substrate via bumps on the lower surfaces of both sides, and a set of first and second semiconductor chips, The second In at least the former of the fourth semiconductor chip set, the second semiconductor chip covers the first semiconductor chip when viewed from the direction perpendicular to the upper surface of the substrate, and the first and second semiconductor chips are formed on the substrate. A semiconductor device characterized in that when viewed from a direction perpendicular to the upper surface, both have a rectangular shape and are arranged in a direction in which their longitudinal directions intersect each other . 2. The semiconductor device according to claim 1 , wherein both side portions of the substrate have step portions in the upper recesses, and the upper surface of the first semiconductor chip is bonded to the upper surface of the step portion by wire bonding. The height of the stepped portion upper surface, a semiconductor device of low claim 2 than the height of the first semiconductor chip top surface. The semiconductor device according to any one of claims 1 to 3 having a first reinforcement member that supports the second semiconductor chip provided on the first semiconductor chip. The semiconductor device according to any one of claims 1 to 4 having a second reinforcing member that supports the first semiconductor chip provided on the upper bottom surface of the recess of the substrate. In the upper concave portion of the substrate, in which both side portions in the long side direction are formed thicker than the central portion, thereby forming a concave portion that vertically passes between both end surfaces along the long side direction in the central portion of the upper and lower surfaces. The first semiconductor chips are accommodated in such a manner that their longitudinal directions coincide with each other and bonded to the concave upper surface pattern of the substrate via bumps, and the second semiconductor chips are arranged in the lower concave portion of the substrate so that their longitudinal directions coincide with each other. accommodated by joining via the bumps in the recess bottom surface pattern of the substrate, is bonded via the bumps on both sides the upper surface of the third semiconductor chip on both sides the upper surface pattern of the substrate is disposed above the first semiconductor chip, the fourth A semiconductor chip is disposed below the third semiconductor chip and joined to the lower surface patterns on both sides of the substrate via bumps on the lower surfaces of both sides, and a set of first and second semiconductor chips, and third and fourth semiconductors A small set of chips In at least the former, the second semiconductor chip covers the first semiconductor chip when viewed from the direction perpendicular to the upper surface of the substrate, and both the first and second semiconductor chips having a rectangular shape are the upper surface of the substrate. A method of manufacturing a semiconductor device, characterized in that the semiconductor devices are arranged in a direction in which their longitudinal directions intersect each other when viewed from a direction perpendicular to the vertical direction . A memory substrate having a central portion on the upper and lower surfaces by forming both side portions in the long side direction thicker than the central portion , and a concave portion vertically passing between both end surfaces along the long side direction; and a memory substrate A first memory chip that is accommodated in the upper recess of the memory substrate so that their longitudinal directions coincide with each other and bonded to the upper surface pattern of the recess of the memory substrate via bumps, and both sides of the memory substrate disposed on the upper side of the first memory chip a second memory chip to be bonded via the bumps at both sides an upper surface part upper surface pattern, is accommodated so as to lower the recess of the memory substrate longitudinal mutual match via the bumps in the recess bottom surface pattern of the memory substrate Bei third memory chip to be joined, and a fourth memory chips are bonded via the bumps on both sides the lower surface on both the lower surface pattern of the memory substrate is arranged below the third memory chip , First, a set of the second semiconductor chip, third, the set of fourth semiconductor chip, at least the former, the second semiconductor chip covers the first semiconductor chip when viewed in the direction perpendicular to the upper surface of the substrate The first and second semiconductor chips each have a rectangular shape when viewed from the direction perpendicular to the upper surface of the substrate, and the memory modules arranged in directions in which the longitudinal directions intersect with each other are used as the base substrate. A card-type recording characterized in that an IC chip for controlling the operation of the first to fourth memory chips is mounted on the other surface of the base substrate, and the whole is housed in a package. Medium.

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