JP4419546B2 - Plasma processing apparatus and thin film forming method - Google Patents

Description

  The present invention relates to a plasma processing apparatus and a plasma processing method, and more particularly to a thin film forming apparatus and a thin film forming method for forming a thin film on the inner surface of a hollow container by a plasma-assisted chemical vapor deposition method.

  Conventionally, in order to impart gas barrier properties, water vapor barrier properties, surface wettability, etc. to a container made of plastic or the like, a thin film is formed on the inner surface of the container. As such a film forming method, a plasma assisted chemical vapor deposition method (PECVD method) is known in which a process gas is converted into plasma and chemically reacted to form a thin film on the inner surface of the container.

  As a thin film deposition apparatus using the PECVD method, as shown in FIG. 13, a metal container 11 for containing microwaves, and a vacuum chamber made of quartz glass provided in the metal container 11 and containing a hollow container 12 therein. 13, a raw material gas introduction pipe 14 for introducing a raw material gas into the hollow container 12, a microwave oscillator 15, and a microwave from the microwave oscillator 15 are supplied into the metallic container 11 from the side surface of the metallic container 11. A rectangular waveguide 16, a lid 17 that shuts off the microwave in the metal container 11 and hermetically seals the vacuum chamber 13; a support 18 that supports and fixes the hollow container 12 in the vacuum chamber 13; A thin film deposition apparatus 10 having a terminal end connected to a vacuum pump (not shown) and an exhaust port 19 for exhausting the gas in the vacuum chamber 13 is known (see Patent Document 1).

The thin film is formed on the inner surface of the hollow container 12 using the thin film forming apparatus 10 as follows.
First, the hollow container 12 such as a plastic bottle is disposed in the vacuum chamber 13, the lid 17 is closed, the vacuum pump is operated, the gas in the vacuum chamber 13 is exhausted, and the inside of the vacuum chamber 13 is brought into a constant reduced pressure state. keep.

  In this state, the raw material gas is introduced into the hollow container 12 from the raw material gas introduction pipe 14, and the microwave from the microwave oscillator 15 is supplied into the metal container 11 through the rectangular waveguide 16. The raw material gas is turned into plasma by microwaves, and plasma is generated in the hollow container 12. Then, the plasma source gas chemically reacts with the inner surface of the hollow container 12, and a thin film is formed on the inner surface of the hollow container 12.

  As another thin film forming apparatus, as shown in FIG. 14, microwaves from a microwave oscillator 15 are supplied into the metal container 11 from the upper surface of the metal container 11 instead of the rectangular waveguide 16. A thin film deposition apparatus 20 including a circular waveguide 21 is known (see Patent Document 2).

  Furthermore, as another thin film deposition apparatus, as shown in FIG. 15, instead of the rectangular waveguide 16, a rectangular waveguide 31 that propagates microwaves from the microwave oscillator 15, and a rectangular waveguide 31. Impedance matching unit 32 provided in the middle of the waveguide, a coaxial waveguide converter 33 provided at the end of the rectangular waveguide 31, and a coaxial line extending from the coaxial waveguide converter 33 into the vacuum chamber 13. 34 can be considered (see Patent Document 3).

  The coaxial waveguide converter 33 in the thin film deposition apparatus 30 converts the propagating microwave mode from the waveguide mode to the transmission mode of the coaxial line. The coaxial line 34 includes an outer conductor 35 and an inner conductor 36 disposed coaxially therein, and the outer periphery (ground) of the outer conductor 35 is connected to the metallic container 11 and the coaxial waveguide converter 33. The inner conductor 36 also serves as the source gas introduction pipe 14, and its tip 37 protrudes from the bottom surface of the metal container 11 by a length of one quarter (λ / 4) of the wavelength λ of the microwave, Located in the hollow container 12.

  This structure is a so-called λ / 4 whip antenna structure, and the microwave electric field is strongest at the tip 37 of the inner conductor 36 (the raw material gas introduction pipe 14). Accordingly, since the source gas outlet and the microwave field strength point are the same, plasma is generated around the tip 37 of the inner conductor 36 (source gas introduction tube 14).

The thin film deposition apparatus as described above has the following problems.
In the thin film forming apparatus 10 (20), in order to form a uniform thin film on the inner surface of the hollow container 12, the electromagnetic field distribution of the microwave in the metal container 11 is extremely important. Although this electromagnetic field distribution is roughly determined by the size (inner diameter and height) of the metal container 11 corresponding to the frequency of the microwave, the high frequency of the quartz glass vacuum chamber 13 provided in the metal container 11 is also provided. It varies depending on characteristics (dielectric constant and dielectric loss tangent) and impedance of generated plasma. The electromagnetic field distribution is also affected by a metal member such as the source gas introduction pipe 14 and a plastic member such as the support 18.
Therefore, according to the shape and size of the vacuum chamber 13, the impedance of the plasma, the size of the source gas introduction tube 14 and the support 18 and the like so that an electromagnetic field distribution capable of forming a uniform thin film on the inner surface of the hollow container 12 is obtained. The shape and size of the metal container 11 are designed.

However, when the shape and size of the hollow container 12 that is the film formation target are changed, the shape and size of the vacuum chamber 13, the impedance of the plasma, the sizes of the source gas introduction pipe 14 and the support 18, etc. are also changed as a matter of course. As a result, the electromagnetic field distribution of the microwave changes greatly.
As described above, when the shape and size of the metal container 11 are designed so that an electromagnetic field distribution capable of forming a uniform thin film can be obtained in accordance with the specific hollow container 12, other shapes and sizes can be obtained. There is a problem that uniform film formation cannot be performed in a hollow container, and it cannot be applied to hollow containers of other shapes and sizes.

In the thin film deposition apparatus 30, the length (λ / 4) of the protruding portion from the bottom surface of the metal container 11 of the internal conductor 36 (source gas introduction pipe 14) that becomes the whip antenna portion is determined by PECVD. In the normal frequency of 2.45 GHz used, it is about 3 cm.
Therefore, when the hollow container 12 is vertically long as in the illustrated example, the plasma concentrates on the stopper portion of the hollow container 12, and the plasma density is reduced at the bottom of the hollow container 12, so that uniform film formation is performed. There is a problem that the film thickness of the thin film on the inner surface of the hollow container 12 varies.

Even when the length of the protruding portion of the inner conductor 36 (source gas introduction pipe 14) from the bottom surface of the metal container 11 is n (λ / 2) + (λ / 4), it can function as a whip antenna. (Where n is 0, 1, 2, 3...).
However, assuming that the length of the protruding portion is n (λ / 2) + (λ / 4) and the length is increased, there are peaks and valleys in the electromagnetic field distribution of the microwave near the protruding portion (whipped antenna portion). As a result, uniform film formation cannot be performed.

In the thin film deposition apparatus 30, similarly to the thin film deposition apparatus 10 (20), a metal container is provided so that an electromagnetic field distribution capable of forming a uniform thin film can be obtained in accordance with the specific hollow container 12. If the shape and size of 11 were designed, uniform film formation could not be performed with hollow containers of other shapes and sizes, and there was a problem that it was not possible to cope with hollow containers of other shapes and sizes.
Special Table 2002-543292 Special table 2001-518685 gazette Japanese Patent Laid-Open No. 9-301895

  Therefore, the object of the present invention is to control the electromagnetic field distribution of the microwave near the hollow container, and to treat the inner surface of the hollow container with uniform plasma, and with the same apparatus, various shapes Plasma processing equipment that can handle hollow containers of size, and the electromagnetic field distribution of microwaves in the vicinity of the hollow container can be controlled, and processing with uniform plasma on the inner surface of hollow containers of various shapes and sizes is possible An object of the present invention is to provide a plasma processing method.

The plasma processing apparatus of the present invention includes a metal container for containing microwaves, a vacuum chamber provided in the metal container and containing a hollow container therein, and a source gas introduction pipe for introducing a source gas into the hollow container A microwave oscillator and a waveguide for supplying the microwave from the microwave oscillator into the metal container, and the microwave in the metal container is interposed between the metal container and the hollow container. At least one conductor that generates a high-frequency current and re-radiates microwaves using the high-frequency current , the conductor is linear, and the longitudinal direction of the conductor is the electric field of the microwave in the metal container. it is the same direction as the length of the conductor, and is characterized in range der Rukoto of the range of ± 40% of the half wavelength of the microwave λ (λ / 2).

Here, straight line-shaped conductor, and when a said waveguide to provide microwave from the side of the metal container into the metal container from the microwave oscillator, which is more effective.
Further, the linear conductor is more effective when the source gas introduction tube also serves as a waveguide for supplying the microwave from the microwave oscillator into the metal container.

In addition, the plasma processing apparatus of the present invention includes a metal container that contains microwaves, a vacuum chamber that is provided in the metal container and that houses a hollow container, and a raw material gas that introduces a raw material gas into the hollow container An introduction tube, a microwave oscillator, and a waveguide for supplying a microwave from the microwave oscillator into the metal container, and the metal container and the hollow container are disposed between the metal container and the hollow container. A high-frequency current is generated by the microwave, and at least one conductor for re-radiating the microwave by the high-frequency current is disposed, the conductor is annular , and the circumferential direction of the conductor is the microwave in the metal container. Ri field in the same direction der, the length of the circumference of the annular conductor is characterized in that in the range of the range of ± 40% of the wavelength λ of the microwave.
The annular conductor is more effective when the waveguide supplies the microwave from the microwave oscillator into the metal container from the upper surface or the lower surface of the metal container.

Moreover, it is desirable that the conductor is disposed on the vacuum chamber directly or via another member.
The conductor is preferably disposed by winding a sheet having the conductor formed on a surface thereof around the vacuum chamber.
The metal container preferably has a cylindrical cavity resonator structure.
The plasma processing apparatus of the present invention may be one in which two or more vacuum chambers are provided in the metal container.
The plasma processing apparatus of the present invention is suitable for a thin film deposition apparatus for depositing a thin film on the inner surface of a hollow container.

  In addition, the thin film deposition method of the present invention includes a metal container that can contain microwaves, a vacuum chamber that is provided in the metal container and accommodates a hollow container therein, and a raw material that introduces a raw material gas into the hollow container A thin film is formed on the inner surface of the hollow container using a thin film deposition apparatus comprising a gas introduction tube, a microwave oscillator, and a waveguide for supplying the microwave from the microwave oscillator into the metal container. In the thin film deposition method, the film thickness of the thin film on the surface of the hollow container after film formation is measured, the measured film thickness is fed back, and a desired film thickness is obtained between the metal container and the hollow container. In the vicinity of the portion that is not formed, a high-frequency current is generated by the microwave in the metal container, and a conductor that re-radiates the microwave by the high-frequency current is disposed.

  In the plasma processing apparatus of the present invention, a high-frequency current is generated between the metal container and the hollow container by the microwave in the metal container, and a conductor that re-radiates the microwave by the high-frequency current is at least Since one is arranged, the electromagnetic field distribution of the microwave near the hollow container can be controlled, the inner surface of the hollow container can be processed with uniform plasma, and various shapes can be obtained with the same apparatus. It is possible to correspond to a hollow container of a size.

In addition, if the conductor is straight and the longitudinal direction of the conductor is the same as the direction of the electric field of the microwave in the metal container, the function of microwave re-radiation can be sufficiently extracted.
In addition, if the length of the linear conductor is within a range of ± 40% of the half of the microwave wavelength λ (λ / 2), the resonance phenomenon can be sufficiently exerted, and the microwave is re-radiated. The function of can be further extracted.
Such a linear conductor is more effective when the waveguide supplies the microwave from the microwave oscillator into the metal container from the side surface of the metal container.
Further, the linear conductor is more effective when the source gas introduction tube also serves as a waveguide for supplying the microwave from the microwave oscillator into the metal container.

Further, if the conductor is annular and the circumferential direction of the conductor is the same as the direction of the electric field of the microwave in the metal container, the function of microwave re-radiation can be sufficiently extracted.
Further, if the circumference of the annular conductor is within a range of ± 40% of the microwave wavelength λ, the resonance phenomenon can be sufficiently exerted, and the microwave re-radiation function is further extracted. be able to.
Such an annular conductor is more effective when the waveguide supplies microwaves from the microwave oscillator into the metal container from the upper surface or the lower surface of the metal container.

Further, if the conductor is arranged directly or via another member on the vacuum chamber, it is not necessary to provide another member in the metal container for the arrangement of the conductor. The electromagnetic field distribution is stable.
In addition, if the sheet with the conductor formed on the surface thereof is wound around the vacuum chamber, the sheet with the conductor formed on the surface is replaced according to the shape and size of the hollow container. It can be easily applied to hollow containers of various shapes and sizes.
Moreover, if the metal container has a cylindrical cavity resonator structure, the electromagnetic field distribution in the metal container tends to be relatively axisymmetric.
In addition, if two or more vacuum chambers are provided in the metal container, a plurality of hollow containers can be subjected to plasma treatment simultaneously with one apparatus.
The plasma processing apparatus of the present invention is suitable for a thin film deposition apparatus for depositing a thin film on the inner surface of a hollow container.

  Further, in the plasma processing method of the present invention, a conductor that generates a high-frequency current by a microwave in the metal container between the metal container and the hollow container and re-radiates the microwave by the high-frequency current. Therefore, the inner surface of the hollow container having various shapes and sizes can be treated with uniform plasma.

  Further, in the thin film deposition method of the present invention, the film thickness of the thin film on the surface of the hollow container after film formation is measured, and the measured film thickness is fed back between the metal container and the hollow container. Since a high-frequency current is generated by a microwave in a metal container near a portion where a desired film thickness has not been formed, a conductor for re-radiating the microwave by this high-frequency current is disposed. The electromagnetic field distribution of microwaves in the vicinity of the hollow container can be controlled according to the film thickness of the thin film deposited on the container, and a uniform thin film can be formed on the inner surface of hollow containers of various shapes and sizes It is.

Hereinafter, the plasma processing apparatus of the present invention will be described in detail using a thin film deposition apparatus as an example.
(Example 1)
FIG. 1 is a side sectional view showing an embodiment of the thin film deposition apparatus of the present invention. This thin film deposition apparatus 40 is a metal container having an opening for taking in and out a hollow container 42 formed on the upper surface. 41, a cylindrical vacuum chamber 43 provided in a metal container 41 and having an upper surface formed with an opening for taking in and out of the hollow container 42, and provided through the bottom surface of the metal container 41 and the vacuum chamber 43. The raw material gas introduction pipe 44 for introducing the raw material gas into the hollow container 42 accommodated in the vacuum chamber 43, the microwave oscillator 45, and the microwave from the microwave oscillator 45 from the side surface of the metal container 41 to the metal A rectangular waveguide 46 to be supplied into the container 41, a lid 47 for opening and closing the metal container 41 and the opening of the vacuum chamber 43, and a hollow container 42 are supported and fixed in the vacuum chamber 43. , A terminal 48 connected to a vacuum pump (not shown), an exhaust port 49 for exhausting the gas in the vacuum chamber 43, and a plurality of conductors 50, 50... Arranged on the outer surface of the vacuum chamber 43. And is roughly configured.

  The metal container 41 is made of metal in order to contain microwaves therein, and has a cylindrical cavity resonator structure as shown in FIG. Here, the cylindrical cavity resonator structure is basically a resonator structure obtained by cutting a circular waveguide in the tube axis direction and closing both end surfaces with metal plates. By optimizing the shape, the electromagnetic field is confined in the cavity and vibrates in a specific resonance mode.

The vacuum chamber 43 may be made of a non-metallic material that has little microwave loss, has heat resistance to plasma heat, and has a strength that can withstand the internal vacuum state. Such a vacuum chamber 43 is preferably made of quartz glass.
The rectangular waveguide 46 propagates the microwave from the microwave oscillator 45, and suppresses the reflected wave from the metal container 41 in the middle thereof, and efficiently supplies the microwave to the metal container 41. An impedance matching unit (not shown) is provided.
The lid 47 is made of metal, blocks microwaves in the metal container 41, and seals the vacuum chamber 43 in an airtight manner.

A plurality of conductors 50 are arranged at equal intervals along the outer periphery of the vacuum chamber 43, and a plurality of rows of aggregates arranged along the outer periphery of the vacuum chamber 43 are provided at intervals in the vertical direction. ing.
The conductor 50 is a so-called resonance element that generates a high-frequency current by the microwave in the metal container 41 and re-radiates the microwave by the high-frequency current, that is, re-radiates by resonating with the microwave.

  The conductor 50 is linear, and its longitudinal direction is a vertical direction. This is because the transmission mode of the microwave supplied from the rectangular waveguide 46 is the TE mode, and the direction of the electric field of the microwave is the vertical direction. It is for drawing out enough.

  The length of the conductor 50 is preferably within a range of ± 40% of half the wavelength λ of the microwave (λ / 2). If it exists in this range, the resonance phenomenon of the conductor 50 can fully be exhibited and the function of the microwave re-radiation can be drawn further. The length of the conductor 50 is more preferably within a range of ± 10% of the half of the microwave wavelength λ (λ / 2), and most preferably, the length of the half of the microwave wavelength λ (λ / 2). Length. When the conductor 50 is disposed in close contact with the vacuum chamber 43, it is preferable to adjust the length of the conductor 50 in consideration of the dielectric constant of the vacuum chamber 43.

Further, the interval between the adjacent conductors 50 is not particularly limited. However, when λ / 4 or less, the conductors 50 interfere with each other and a resonance frequency shift occurs. Therefore, it is preferable that the intervals be wider than this. .
The conductor 50 may be fixed to the vacuum chamber 43 by bonding the conductor 50 to the vacuum chamber 43 via an adhesive, or by directly attaching the conductor 50 to the vacuum chamber 43 by covering with an adhesive tape. You may go.

Next, a method for forming a thin film on the inner surface of the hollow container 42 using the thin film forming apparatus 40 will be described.
First, a plastic bottle hollow container 42 is placed in the vacuum chamber 43 with the cap portion facing downward, the lid 47 is closed, the vacuum pump is operated, and the gas in the vacuum chamber 43 is exhausted. Keep the inside at a constant reduced pressure.
In this state, the raw material gas is introduced into the hollow container 42 from the raw material gas introduction pipe 44, and the microwave from the microwave oscillator 45 is supplied into the metal container 41 through the rectangular waveguide 46. The raw material gas is turned into plasma by microwaves, and plasma is generated in the hollow container 42. Then, the plasma-formed source gas chemically reacts with the inner surface of the hollow container 42, and a thin film is formed on the inner surface of the hollow container 42.

The source gas may be appropriately selected according to the type of thin film desired to be deposited on the inner surface of the hollow container 42 and is not particularly limited. In the case of forming a silicon oxide thin film, for example, a mixed gas of an organic silicon compound gas and a gas having an oxidizing power is used as the source gas.
Examples of the organosilicon compound include 1,1,3,3-tetramethyldisiloxane, hexamethyldisiloxane, vinyltrimethylsilane, methyltrimethoxysilane, hexamethyldisilane, methylsilane, dimethylsilane, trimethylsilane, diethylsilane, Examples include propylsilane, phenylsilane, vinyltriethoxysilane, vinyltrimethoxysilane, tetramethoxysilane, tetraethoxysilane, phenyltrimethoxysilane, methyltriethoxysilane, and octamethylcyclotetrasiloxane.
Examples of the gas having oxidizing power include oxygen, carbon monoxide, carbon dioxide, ozone, and the like.

The frequency of the microwave is usually 2.45 GHz, but any other frequency can be used as long as the source gas can be converted into plasma.
Further, film formation conditions such as microwave output (microwave power), application time, gas supply amount, and the like may be appropriately set according to the film thickness of the thin film to be formed, and are not particularly limited.

  In the thin film deposition apparatus 40 described above, a conductor 50 is disposed on the surface of the vacuum chamber 43 to generate a high-frequency current by the microwave in the metal container 41 and re-radiate the microwave by this high-frequency current. Therefore, the electromagnetic field distribution around the hollow container 42 can be arbitrarily controlled, and as a result, the plasma density distribution inside the hollow container 42 can be arbitrarily controlled. Thereby, processing (film formation) with uniform plasma on the inner surface of the hollow container 42 becomes possible. In addition, even when the shape and size of the hollow container 42 are changed, the position of the conductor 50 can be changed accordingly. Therefore, the same apparatus can be used to treat the hollow containers of various shapes and sizes with uniform plasma ( Film formation) becomes possible. Therefore, it becomes a general-purpose thin film deposition apparatus that can correspond to hollow containers of various shapes and sizes.

  That is, the distribution of the plasma density inside the hollow container 42 is closely related to the electromagnetic field distribution of the microwave around the hollow container 42, and in order to perform uniform film formation, the electromagnetic wave of the microwave around the hollow container 42 is used. It is desirable that the field distribution is as uniform as possible. In order to make the electromagnetic field distribution of the microwave around the hollow container 42 uniform, the size of the metal container 41 in which the microwave is usually contained so that an optimum electromagnetic field distribution can be obtained at the frequency of the microwave used. (Bottom shape, height) etc. are designed. However, in the actual thin film deposition apparatus 40, the electromagnetic field distribution of the microwave is affected by the shape and size of the vacuum chamber 43, the impedance of the plasma, the sizes of the source gas introduction pipe 44 and the support 48, etc. Disturbance occurs in the field distribution.

  Therefore, in the thin film deposition apparatus 40, the conductor 50 is arranged on the surface of the vacuum chamber 43 to correct the disturbance of the electromagnetic field distribution. Specifically, in the thin film deposition apparatus 40, a plurality of conductors 50 are arranged so as to uniformly surround the entire hollow container 42, and an electric field is concentrated around the hollow container 42, thereby introducing the vacuum chamber 43 and the source gas. Even if the influence of the disturbance of the electromagnetic field distribution due to the tube 44, the support 48, plasma, or the like, the influence is relatively reduced as compared with the case where the electric field is not concentrated.

The arrangement of the conductors 50 is not limited to the arrangement at equal intervals as in the illustrated example. If a location where the plasma density is low is known in advance, an electric field in the vicinity of the portion is increased in order to increase the plasma density in that portion. It is also possible to make a position that compensates for.
For example, the thickness of the thin film on the surface of the hollow container formed without the conductor 50 is measured, the measured film thickness is fed back, and the conductor 50 is placed near the portion where the desired film thickness is not formed. It can also be arranged.

  Further, the shape of the conductor 50 is not limited to the strip shape in the illustrated example, and may be a rectangular shape, a round bar shape, or the like. Also, the shape connecting two plate-like triangles or fan-shaped vertices can be regarded as an assembly of linear conductors that are gradually inclined, so that in the present invention it is handled as a linear conductor. And Further, one end of each of the three linear conductors may be connected at one point, and each conductor may have a shape opened at an angle of about 120 ° with the connection point as the center (see FIG. 12). . In this case, the length of each straight line portion is about λ / 4. By adopting such a shape, it is possible to resonate with microwaves in an electric field direction other than the vertical direction, and it is difficult to be affected by the electric field direction of the microwaves in the metal container 41. Other conductor shapes that are not easily affected by the direction of the electric field of the microwave include a cross shape, a triangular shape in which three linear conductors are connected, a quadrangular shape in which four linear conductors are connected, and an annular shape. Etc.

Further, the metal container 41 in the thin film deposition apparatus 40 is not limited to a cylindrical one as shown in FIG. 2, and may be a rectangular metal container 51 as shown in FIG. 3, for example. . However, a cylindrical cavity resonator structure as shown in FIG. 2 is preferable in that the basic electromagnetic field distribution is an axisymmetric structure.
Further, the connection position of the rectangular waveguide 46 to the metal container 41 is basically preferably the center in the height direction of the metal container 41 as shown in the illustrated example, but to this position due to the configuration of the apparatus. This is not the case if it is difficult to connect.

(Example 2)
FIG. 4 is a side sectional view showing another embodiment of the thin film deposition apparatus according to the present invention. The thin film deposition apparatus 60 includes a cylindrical metal container 41 for confining microwaves, and a metal container 41 inside. A cylindrical vacuum chamber 43 that accommodates the hollow container 42 therein, a metal container 41 and a raw material gas introduction pipe that penetrates the bottom surface of the vacuum chamber 43 and introduces a raw material gas into the hollow container 42 44, a microwave oscillator 45, a circular waveguide 61 that supplies microwaves from the microwave oscillator 45 into the metal container 41 from the upper surface of the metal container 41, and a hollow container 42 supported in the vacuum chamber 43. A support 48 to be fixed, an end connected to a vacuum pump (not shown), an exhaust port 49 for exhausting gas in the vacuum chamber 43, and a plurality of conductors 62 disposed on the outer surface of the vacuum chamber 43, And and a 2 ... it is those schematic configuration.

Similar to the first embodiment, the metal container 41 has a cylindrical cavity resonator structure as shown in FIG.
The vacuum chamber 43 can be the same as that in the first embodiment, and the vacuum chamber 43 is preferably made of quartz glass.
The circular waveguide 61 propagates the microwave from the microwave oscillator 45. In the middle of the circular waveguide 61, a matching unit (not shown) that suppresses the reflected wave from the metal container 41, and the microwave are efficiently transmitted. An antenna portion (not shown) for radiating is provided. Instead of the circular waveguide 61, a coaxial structure transmission line may be provided.

The conductor 62 has an annular shape (ring shape) along the outer periphery of the vacuum chamber 43, and a plurality of conductors 62 are provided at intervals in the vertical direction.
The conductor 62 is a so-called resonance element that generates a high-frequency current by a microwave in the metal container 41 and re-radiates the microwave by the high-frequency current, that is, re-radiates by resonating with the microwave.

  The conductor 62 is annular, and the circumferential direction of the conductor 62 is supplied from the circular waveguide 61 in order to sufficiently bring out the function of the conductor 62 as a resonant element. Are the same.

  The length of the conductor 62 is preferably within a range of ± 40% of the microwave wavelength λ. If it exists in this range, the resonance phenomenon of the conductor 62 can fully be exhibited and the function of microwave re-radiation can be further drawn out. The length of the conductor 62 is more preferably within a range of ± 10% of the microwave wavelength λ, and most preferably the microwave wavelength λ. When the conductor 62 is disposed in close contact with the vacuum chamber 43, it is preferable to adjust the length of the conductor 62 in consideration of the dielectric constant of the vacuum chamber 43.

Further, the interval between the adjacent conductors 62 is not particularly limited. However, when λ / 4 or less, the conductors 62 interfere with each other and a resonance frequency shift occurs. Therefore, it is preferable that the intervals be wider than this. .
The conductor 62 may be fixed to the vacuum chamber 43 by bonding the conductor 62 to the vacuum chamber 43 via an adhesive, or by directly attaching the conductor 62 to the vacuum chamber 43 by covering with an adhesive tape. You may go.

Next, a method for forming a thin film on the inner surface of the hollow container 42 using the thin film forming apparatus 60 will be described.
First, a plastic bottle hollow container 42 is placed in the vacuum chamber 43 with the cap portion facing downward, the vacuum pump is operated, the gas in the vacuum chamber 43 is evacuated, and the vacuum chamber 43 is kept in a constant depressurized state. keep.
In this state, the raw material gas is introduced into the hollow container 42 from the raw material gas introduction pipe 44, and the microwave from the microwave oscillator 45 is supplied into the metal container 41 through the circular waveguide 61. The raw material gas is turned into plasma by microwaves, and plasma is generated in the hollow container 42. Then, the plasma-formed source gas chemically reacts with the inner surface of the hollow container 42, and a thin film is formed on the inner surface of the hollow container 42.

The frequency of the microwave is usually 2.45 GHz, but any other frequency can be used as long as the source gas can be converted into plasma.
Further, film formation conditions such as microwave output (microwave power), application time, gas supply amount, and the like may be appropriately set according to the film thickness of the thin film to be formed, and are not particularly limited.

  In the thin film deposition apparatus 60 described above, as in the first embodiment, a high-frequency current is generated on the surface of the vacuum chamber 43 by the microwave in the metal container 41, and the microwave is re-radiated by this high-frequency current. Therefore, the electromagnetic field distribution around the hollow container 42 can be arbitrarily controlled, and as a result, the plasma density distribution inside the hollow container 42 can be arbitrarily controlled. Thereby, processing (film formation) with uniform plasma on the inner surface of the hollow container 42 becomes possible. In addition, even when the shape and size of the hollow container 42 are changed, the position of the conductor 62 can be changed accordingly, so that the same apparatus can be used to process the hollow containers of various shapes and sizes with uniform plasma ( Film formation) becomes possible. Therefore, it becomes a general-purpose thin film deposition apparatus that can correspond to hollow containers of various shapes and sizes.

The arrangement of the conductors 62 is not limited to the arrangement at equal intervals as in the illustrated example. If a location where the plasma density is low is known in advance, an electric field in the vicinity of the portion is increased in order to increase the plasma density in that portion. It is also possible to make a position that compensates for.
For example, the film thickness of the thin film on the surface of the hollow container formed without the conductor 62 is measured, the measured film thickness is fed back, and the conductor 62 is placed near the portion where the desired film thickness is not formed. It can also be arranged.

Moreover, the shape of the conductor 62 is not limited to the strip | belt shape of the example of illustration, You may be what made the round bar-shaped conductor cyclic | annular.
Further, the metal container 41 in the thin film deposition apparatus 60 is not limited to a cylindrical container as shown in FIG. 5, and may be a rectangular parallelepiped metal container, for example. However, a cylindrical cavity resonator structure as shown in FIG. 5 is preferable in that the basic electromagnetic field distribution is an axially symmetric structure.
The connection position of the circular waveguide 61 to the metal container 41 is not limited to the upper surface of the metal container 41 in the illustrated example, and may be the lower surface of the metal container 41.

(Example 3)
FIG. 6 is a side sectional view showing an embodiment of the thin film deposition apparatus of the present invention. This thin film deposition apparatus 70 is a metal container having an opening for taking in and out the hollow container 42 formed on the upper surface. 41, a cylindrical vacuum chamber 43 provided in a metal container 41 and having an upper surface formed with an opening for taking in and out of the hollow container 42, and provided through the bottom surface of the metal container 41 and the vacuum chamber 43. A raw material gas introduction tube 44 for introducing a raw material gas into the hollow container 42 accommodated in the vacuum chamber 43, a microwave oscillator 45, and a rectangular waveguide 71 for propagating microwaves from the microwave oscillator 45, The impedance matching unit 72 provided in the middle of the rectangular waveguide 71, the coaxial waveguide converter 73 provided at the end of the rectangular waveguide 71, and the coaxial waveguide converter 73 from the inside of the vacuum chamber 43. For A coaxial line 74, a lid 47 for opening and closing the metal container 41 and the opening of the vacuum chamber 43, a support 48 for supporting and fixing the hollow container 42 in the vacuum chamber 43, and a termination Is connected to a vacuum pump (not shown), and includes an exhaust port 49 for exhausting the gas in the vacuum chamber 43 and a plurality of conductors 50, 50... Disposed on the outer surface of the vacuum chamber 43. It is what is done.

Similarly to the first embodiment, the metal container 41 has a cylindrical cavity resonator structure as shown in FIG.
The vacuum chamber 43 can be the same as that in the first embodiment, and the vacuum chamber 43 is preferably made of quartz glass.
The lid 47 is made of metal as in the first embodiment, blocks the microwave in the metal container 41, and seals the vacuum chamber 43 in an airtight manner.

The impedance matching unit 72 is for efficiently supplying microwaves to the metal container 41.
The coaxial waveguide converter 73 converts the transmission mode of the propagating microwave from the waveguide mode to the transmission mode of the coaxial line.
The coaxial line 74 includes an outer conductor 75 and an inner conductor 76 disposed coaxially therein, and the outer circumference (earth) of the outer conductor 75 is connected to the metal container 41 and the coaxial waveguide converter 73. The inner conductor 76 also serves as the source gas introduction pipe 44, and the tip 77 of the inner conductor 76 protrudes from the bottom surface of the metal container 41 by a length of one quarter (λ / 4) of the wavelength λ of the microwave. 42.

This structure is a so-called λ / 4 whip antenna structure, and the microwave electric field is strongest at the tip 77 of the internal conductor 76 (the raw material gas introduction pipe 44). Therefore, since the source gas outlet and the microwave field strength point are the same, plasma is generated around the tip 77 of the inner conductor 76 (source gas introduction tube 44).
Here, even when the length of the protruding portion of the inner conductor 76 (source gas introduction pipe 44) from the bottom surface of the metal container 41 is n (λ / 2) + (λ / 4), it functions as a whip antenna. (Where n is 0, 1, 2, 3...).

A plurality of conductors 50 are arranged at equal intervals along the outer periphery of the vacuum chamber 43, and a plurality of rows of aggregates arranged along the outer periphery of the vacuum chamber 43 are provided at intervals in the vertical direction. ing.
The conductor 50 is a so-called resonance element that generates a high-frequency current by the microwave in the metal container 41 and re-radiates the microwave by the high-frequency current, that is, re-radiates by resonating with the microwave.

  The conductor 50 is linear, and its longitudinal direction is a vertical direction. This is because the electric field direction of the microwave supplied from the coaxial line 74 is the vertical direction, so that the function of the conductor 50 as a resonant element can be sufficiently brought out by matching the electric field direction.

  The length of the conductor 50 is preferably within a range of ± 40% of half the wavelength λ of the microwave (λ / 2). If it exists in this range, the resonance phenomenon of the conductor 50 can fully be exhibited and the function of the microwave re-radiation can be drawn further. The length of the conductor 50 is more preferably within a range of ± 10% of the half of the microwave wavelength λ (λ / 2), and most preferably, the length of the half of the microwave wavelength λ (λ / 2). Length. When the conductor 50 is disposed in close contact with the vacuum chamber 43, it is preferable to adjust the length of the conductor 50 in consideration of the dielectric constant of the vacuum chamber 43.

Further, the interval between the adjacent conductors 50 is not particularly limited. However, when λ / 4 or less, the conductors 50 interfere with each other and a resonance frequency shift occurs. Therefore, it is preferable that the intervals be wider than this. .
The conductor 50 may be fixed to the vacuum chamber 43 by bonding the conductor 50 to the vacuum chamber 43 via an adhesive, or by directly attaching the conductor 50 to the vacuum chamber 43 by covering with an adhesive tape. You may go.

Next, a method for forming a thin film on the inner surface of the hollow container 42 using the thin film forming apparatus 70 will be described.
First, a plastic bottle hollow container 42 is placed in the vacuum chamber 43 with the cap portion facing downward, the lid 47 is closed, the vacuum pump is operated, and the gas in the vacuum chamber 43 is exhausted. Keep the inside at a constant reduced pressure.
In this state, the source gas is introduced into the hollow container 42 from the source gas introduction pipe 44. At the same time, it is radiated from the microwave oscillator 45 and passes through the rectangular waveguide 71 to the coaxial waveguide converter 73 where it is excited by the inner conductor 76 of the coaxial line 74 and becomes the transmission mode of the coaxial line 74. The raw material gas in the hollow container 42 is turned into plasma by the microwave supplied to the metal container 41, and plasma is generated in the hollow container 42. Then, the plasma-formed source gas chemically reacts with the inner surface of the hollow container 42, and a thin film is formed on the inner surface of the hollow container 42.

The frequency of the microwave is usually 2.45 GHz, but any other frequency can be used as long as the source gas can be converted into plasma.
Further, film formation conditions such as microwave output (microwave power), application time, gas supply amount, and the like may be appropriately set according to the film thickness of the thin film to be formed, and are not particularly limited.

In the thin film deposition apparatus 70 described above, a high-frequency current is generated by the microwave in the metal container 41 on the surface of the vacuum chamber 43 as in Embodiment 1, and the microwave is re-radiated by this high-frequency current. Therefore, the electromagnetic field distribution around the hollow container 42 can be arbitrarily controlled, and as a result, the plasma density distribution inside the hollow container 42 can be arbitrarily controlled. Specifically, in the thin film deposition apparatus 70, since the electric field concentrates on the tip of the whip antenna part, the plasma density decreases as it goes toward the bottom of the hollow container 42, but a conductor that re-radiates microwaves. By arranging 50, the electric field is concentrated around the hollow container 42, and the plasma density inside the hollow container 42 is made uniform.
In addition, even when the shape and size of the hollow container 42 are changed, the position of the conductor 50 can be changed accordingly. Therefore, the same apparatus can be used to treat the hollow containers of various shapes and sizes with uniform plasma ( Film formation) becomes possible. Therefore, it becomes a general-purpose thin film deposition apparatus that can correspond to hollow containers of various shapes and sizes.

The arrangement of the conductors 50 is not limited to the arrangement at equal intervals as in the illustrated example. If a location where the plasma density is low is known in advance, an electric field in the vicinity of the portion is increased in order to increase the plasma density in that portion. It is also possible to make a position that compensates for.
For example, the thickness of the thin film on the surface of the hollow container formed without the conductor 50 is measured, the measured film thickness is fed back, and the conductor 50 is placed near the portion where the desired film thickness is not formed. It can also be arranged.

Moreover, the shape of the conductor 50 is not limited to the strip | belt shape of the example of illustration, It can be set as various shapes similarly to the conductor 50 in the example 1 of a form.
Further, the metal container 41 in the thin film deposition apparatus 70 is not limited to a cylindrical container as shown in FIG. 7, and may be a rectangular parallelepiped metal container 51, for example. However, a cylindrical cavity resonator structure as shown in FIG. 7 is preferable in that the basic electromagnetic field distribution is an axially symmetric structure.

(Example 4)
FIG. 8 is a schematic perspective view showing an embodiment of the thin film deposition apparatus of the present invention. The thin film deposition apparatus 80 includes a rectangular parallelepiped metal container 81 and a plurality of cylinders provided in the metal container 81. -Shaped vacuum chamber 43, a plurality of source gases introduced into the hollow containers (not shown) provided through the bottoms of the vacuum chambers 43, the metal containers 81 and the respective vacuum chambers 43. A support tool for supporting and fixing an introduction tube 44, a microwave oscillator (not shown), a rectangular waveguide 46 for propagating microwaves from the microwave oscillator, and a hollow container (not shown) in each vacuum chamber 43. (Not shown), an end is connected to a vacuum pump (not shown), exhaust ports (not shown) for exhausting the gas in each vacuum chamber 43, and a plurality of conductors 50 arranged on the outer surface of each vacuum chamber 43 , 50 ... Those outlined configured.

  In the metal container 81, a plurality of substantially similar electromagnetic field distributions are generated inside by optimizing the shape and size thereof. A vacuum chamber 43 is disposed at a place where such an electromagnetic field distribution is generated.

In such a thin film deposition apparatus 80, since a plurality of vacuum chambers 43 are provided in a metal container 81, plasma processing is simultaneously performed on a plurality of hollow containers with one microwave oscillator and one vacuum pump. (Film formation) can be performed.
Then, by disposing a plurality of conductors 50 on the outer surface of each vacuum chamber 43, the electromagnetic field distribution around the hollow container in each vacuum chamber 43 can be arbitrarily controlled, and as a result, the plasma density inside the hollow container can be controlled. Can be arbitrarily controlled.

(Example 5)
FIG. 9 is a schematic perspective view showing an embodiment of the thin film deposition apparatus of the present invention. The thin film deposition apparatus 90 is provided with a cylindrical metal container 91 and a plurality of metal containers 91 provided therein. Cylindrical vacuum chamber 43, a plurality of source gas introduction pipes that are provided through metal container 91 and the bottom surface of each vacuum chamber 43, and introduce source gas into hollow containers 42 accommodated in each vacuum chamber 43. 44, a microwave oscillator (not shown), a rectangular waveguide 92 that propagates microwaves from the microwave oscillator, an impedance matching unit (not shown) provided in the middle of the rectangular waveguide 92, a square A coaxial waveguide converter 93 provided at the end of the waveguide 92, a coaxial line 94 extending from the coaxial waveguide converter 93 toward the center of the metal container 91, and the hollow container 42 are connected to the vacuum chamber 43. Supported and fixed inside A support member (not shown), a sub-chamber 97 which is provided continuously below the metal container 91 and has an upper surface formed with a vent 98 for each vacuum chamber 43, and a vacuum pump (not shown). ) And an exhaust port 49 for exhausting the gas in the sub-chamber 97, and a plurality of conductors 50, 50... Arranged on the outer surface of each vacuum chamber 43. .

  The coaxial line 94 includes an outer conductor 95 and an inner conductor 96 disposed coaxially therein. The outer periphery (earth) of the outer conductor 95 is connected to the metal container 91 and the coaxial waveguide converter 93. The tip of the inner conductor 96 protrudes from the bottom surface of the metal container 91 by a length of one quarter (λ / 4) of the wavelength λ of the microwave, and is located at the center of the metal container 91. This structure is a so-called λ / 4 whip antenna structure.

Microwaves in the thin film deposition apparatus 90 are radiated from a microwave oscillator (not shown), travel through a rectangular waveguide 92 to a coaxial waveguide converter 93, where they pass through the inner conductor 96 of the coaxial line 94. Excited, becomes a transmission mode of the coaxial line 94, and is supplied to the metal container 91. The microwave supplied to the metallic container 91 spreads radially from the tip of the protruding portion (whipped antenna part) of the inner conductor 96 from the bottom surface of the metallic container 91 toward the wall surface of the metallic container 91.
Each vacuum chamber 43 is arranged at an equal distance from the whip antenna portion so that the electric field distribution is substantially the same.

In such a thin film deposition apparatus 90, since a plurality of vacuum chambers 43 are provided in a metal container 91, plasma is applied to a plurality of hollow containers 42 simultaneously by one microwave oscillator and one vacuum pump. Processing (film formation) can be performed.
Then, by disposing a plurality of conductors 50 on the outer surface of each vacuum chamber 43, the electromagnetic field distribution around the hollow container in each vacuum chamber 43 can be arbitrarily controlled, and as a result, the plasma density inside the hollow container can be controlled. Can be arbitrarily controlled.

Instead of providing the sub-chamber 97 as in the illustrated example, an exhaust port may be connected to each of the vacuum chambers 43 and these may be integrated and connected to a vacuum pump.
In addition, as long as the microwave can be radiated into the metal container 91, the microwave may be supplied using an antenna of a type other than the whip antenna of the illustrated example.

(Example 6)
FIG. 10 is a schematic cross-sectional side view showing an embodiment of the thin film deposition apparatus of the present invention. This thin film deposition apparatus 100 has a metal base as a main part of the thin film deposition apparatus 70 of the embodiment 3. A plurality are arranged in parallel on the plate 101 (the description of the configuration common to the third embodiment is omitted).

Here, each metal container 41 is electrically connected via the base plate 101.
In the rectangular waveguide 71, a plurality of coaxial waveguide converters 73 are arranged in parallel at equal intervals in the tube axis direction, and each coaxial waveguide converter 73 is rectangularly guided from the microwave oscillator (not shown) side. The coupling coefficient for the microwave is adjusted so as to increase sequentially toward the end of the wave tube 71.
Moreover, each exhaust port 49 is collected on the way, and is connected to one vacuum pump.

In such a thin film deposition apparatus 100, since a plurality of metal containers 41 and vacuum chambers 43 are provided, a plurality of hollow containers (not shown) are simultaneously formed by one microwave oscillator and one vacuum pump. Plasma treatment (film formation) can be performed.
Then, by disposing a plurality of conductors 50 on the outer surface of each vacuum chamber 43, the electromagnetic field distribution around the hollow container in each vacuum chamber 43 can be arbitrarily controlled, and as a result, the plasma density inside the hollow container can be controlled. Can be arbitrarily controlled.

Instead of concentrating the exhaust ports 49 and connecting them to a vacuum pump as shown in the illustrated example, a sub-chamber may be provided as in the fifth embodiment.
Further, as long as the microwave can be radiated into the metal container 41, the microwave may be supplied using an antenna of a type other than the whip antenna shown in the example of the drawing.

(Other forms)
In the first to sixth embodiments described above, the conductor 50 (62) is disposed on the surface of the vacuum chamber 43, but the conductor 50 (62) is disposed between the metal container and the hollow container 42. As long as it is present, the operation and effect of the present invention can be exhibited, and therefore the arrangement position of the conductor 50 (62) is not limited to the surface of the vacuum chamber 43. However, if the conductor 50 (62) is arranged on the surface other than the surface of the vacuum chamber 43, a member for fixing the conductor 50 (62) is required separately, and the electromagnetic field distribution in the metal container is reduced by this member. The conductor 50 (62) is preferably disposed on the outer surface or the inner surface of the vacuum chamber 43 because it is affected.

Further, the fixing of the conductor 50 (62) to the surface of the vacuum chamber is not limited to adhesion or sticking. For example, a pattern of the conductor 50 is formed on the sheet 110 as shown in FIG. Can also be performed by wrapping around the outer surface (or inner surface) of the vacuum chamber 43.
If the conductor 50 (62) is fixed to the surface of the vacuum chamber by wrapping a sheet on which a conductor pattern is formed, even if the shape and size of the hollow container are changed, the optimal conductor can be changed accordingly. By preparing a sheet on which a pattern is formed, it is possible to easily cope with hollow containers of various shapes and sizes with the same apparatus. Therefore, it is possible to shorten the time for switching the type of the hollow container, which is very effective.

  Specifically, the sheet 110 is made by bonding a metal foil such as an aluminum foil to a resin film such as polyethylene terephthalate (PET), providing a mask according to the conductor pattern on the surface of the metal foil, and removing unnecessary portions by etching. Can be produced. According to such a manufacturing method, as shown in FIG. 12, one end of each of the three linear conductors is connected at one point, and each conductor is at an angle of approximately 120 ° around the connection point. The sheet 112 in which the open-shaped conductors 111 are alternately and regularly formed can also be easily manufactured.

In the first to sixth embodiments, a plastic bottle is used as the hollow container 42. However, the hollow container to be formed in the present invention is not limited to this, and may be a plastic cup, a paper container, a paper cup, or the like. Good.
The present invention is not limited to the thin film deposition apparatus of the illustrated example and the thin film deposition method using the same, but is also applied to a plasma processing apparatus for surface-treating the inner surface of a hollow container with plasma, and a plasma processing method using the same Applicable.

Examples of the present invention are shown below.
As the thin film deposition apparatus, the thin film deposition apparatus 40 shown in FIG. 1 was used. Here, an aluminum container having a height of 25 cm and an inner diameter of 21.5 cm was used as the metal container 41, and a quartz glass cylinder having a height of 21 cm and an inner diameter of 7.5 cm was used as the vacuum chamber 43.

Example 1
First, a copper conductor 50 having a width of 5 mm, a length of 50 mm, and a thickness of 0.3 mm is placed on the outer surface of the vacuum chamber 43 so that the longitudinal direction thereof coincides with the axial direction of the vacuum chamber 43 and the outer periphery of the vacuum chamber 43. A total of 24 pieces were pasted in three equal rows in the height direction along the circumference of 8 parts equally divided along the circumference.

Next, a hollow container 42, which is a plastic bottle made of polyethylene terephthalate, is placed in the vacuum chamber 43 with the cap portion facing downward, the lid 47 is closed, the vacuum pump is operated, and the gas in the vacuum chamber 43 is exhausted. The pressure in the vacuum chamber 43 was kept at 10 Pa.
In this state, a raw material gas (hexamethyldisiloxane 2 sccm and oxygen gas 50 sccm) is introduced from the raw material gas introduction tube 44 into the hollow container 42, and a microwave with a microwave power of 300 W is supplied from the microwave oscillator 45 to the rectangular waveguide. 46 was applied to the metal container 41 for 5 seconds to generate plasma in the hollow container 42, and a silicon oxide film was formed on the inner surface of the hollow container 42.

When the oxygen permeation amount of the plastic bottle on which the silicon oxide film was formed was measured using Mocon Oxitran 10/50 manufactured by Modern Control, it was 0.012 fmol / (pg · s · Pa). The oxygen permeation amount of the plastic bottle before forming the silicon oxide film was 0.250 fmol / (pg · s · Pa), and the barrier performance was improved about 20 times.
Moreover, about the plastic bottle which formed the silicon oxide film into a film using the fluorescent X-ray-analysis apparatus (Rigaku Co., Ltd. system 3270), the bottom of the bottle, the center of the bottle body, and the three portions of the silicon oxide film near the stopper When the film thickness was measured, it was confirmed that a silicon oxide film having a uniform film thickness was formed in order of 20 nm, 22 nm, and 21 nm.

(Comparative Example 1)
A silicon oxide film was formed on the inner surface of the hollow container 42 in the same manner as in Example 1 except that the conductor 50 was not disposed on the outer surface of the vacuum chamber 43.
When the oxygen permeation amount of the plastic bottle on which the silicon oxide film was formed was measured, it was 0.025 fmol / (pg · s · Pa).
Moreover, about the plastic bottle which formed the silicon oxide film into a film, when the film thickness of the silicon oxide film of three places near a bottle bottom part, a bottle trunk center part, and a stopper is measured, they are 11 nm, 17 nm, and 18 nm in order, Variations in film thickness were observed.

  According to the plasma processing apparatus and the plasma processing method of the present invention, it is possible to control the electromagnetic field distribution around the hollow container, and processing with uniform plasma on the inner surface of the hollow container of various shapes and sizes with the same apparatus. Is possible.

It is side sectional drawing which shows an example of the thin film film-forming apparatus of this invention. FIG. 2 is a schematic perspective view of the thin film deposition apparatus of FIG. 1. It is a schematic perspective view which shows the other example of the thin film film-forming apparatus of this invention. It is a sectional side view which shows the other example of the thin film film-forming apparatus of this invention. FIG. 5 is a schematic perspective view of the thin film deposition apparatus of FIG. 4. It is a sectional side view which shows the other example of the thin film film-forming apparatus of this invention. FIG. 7 is a schematic perspective view of the thin film deposition apparatus of FIG. 6. It is a schematic perspective view which shows the other example of the thin film film-forming apparatus of this invention. It is a schematic perspective view which shows the other example of the thin film film-forming apparatus of this invention. It is a schematic sectional side view which shows the other example of the thin film film-forming apparatus of this invention. It is a front view which shows an example of the sheet | seat in which the pattern of the conductor was formed. It is a front view which shows the other example of the sheet | seat in which the pattern of the conductor was formed. It is a sectional side view which shows an example of the conventional thin film film-forming apparatus. It is a sectional side view which shows the other example of the conventional thin film film-forming apparatus. It is a sectional side view which shows the other example of the conventional thin film film-forming apparatus.

Explanation of symbols

DESCRIPTION OF SYMBOLS 40 Thin film deposition apparatus 41 Metal container 42 Hollow container 43 Vacuum chamber 44 Source gas introduction pipe 45 Microwave oscillator 46 Rectangular waveguide 50 Conductor 51 Metal container 60 Thin film deposition apparatus 61 Circular waveguide 62 Conductor 70 Thin film formation Membrane apparatus 71 Rectangular waveguide 80 Thin film deposition apparatus 81 Metal container 90 Thin film deposition apparatus 91 Metal container 92 Rectangular waveguide 100 Thin film deposition apparatus 110 Sheet 111 Conductor 112 Sheet

Claims (11)

A metal container that contains microwaves;
A vacuum chamber provided in the metal container and containing a hollow container therein;
A raw material gas introduction pipe for introducing the raw material gas into the hollow container;
A microwave oscillator,
A waveguide for supplying microwaves from the microwave oscillator into the metal container,
Between the metal container and the hollow container, a high-frequency current is generated by microwaves in the metal container, and at least one conductor that performs re-radiation of the microwaves by the high-frequency current is disposed ,
The conductor is linear;
The longitudinal direction of the conductor is the same direction as the electric field direction of the microwave in the metal container,
The plasma processing apparatus the length of the conductor, characterized in range der Rukoto of the range of ± 40% of the half wavelength of the microwave λ (λ / 2). The waveguide, a plasma processing apparatus according to claim 1, wherein the microwave from the side of the metal container and supplies into the metal container from the microwave oscillator. The material gas inlet tube, a plasma processing apparatus according to claim 1, wherein the microwave also serves as a waveguide for supplying the metal container from the microwave oscillator. A metal container that contains microwaves;
A vacuum chamber provided in the metal container and containing a hollow container therein;
A raw material gas introduction pipe for introducing the raw material gas into the hollow container;
A microwave oscillator,
A waveguide for supplying microwaves from the microwave oscillator into the metal container,
Between the metal container and the hollow container, a high-frequency current is generated by microwaves in the metal container, and at least one conductor that performs re-radiation of the microwaves by the high-frequency current is disposed,
The conductor is annular;
Circumferential conductor, Ri same direction der the electric field direction of a microwave in the metal container,
The length of the circumference of the conductor, the microwave a range of ± 40% of the range in der Rukoto features and to pulp plasma processing apparatus of the wavelength λ of. The plasma processing apparatus according to claim 4 , wherein the waveguide supplies microwaves from the microwave oscillator into the metal container from the upper surface or the lower surface of the metal container. The conductor is, on the vacuum chamber, directly or other plasma processing apparatus according to claims 1, characterized in that it is arranged through the member 5 any one. It said conductor, the plasma processing apparatus according to any one of claims 1 to 5 sheets conductor is formed on the surface, characterized in that it is arranged wound around the vacuum chamber. The metallic container, the plasma processing apparatus according to an item any of claims 1 to 7, characterized in that with a cylindrical cavity resonator structure. The metallic container, the plasma processing apparatus according to any one of claims 1 to 8, characterized in that it is provided a vacuum chamber 2 or more. The plasma processing apparatus according to any one of claims 1 to 9 , wherein the plasma processing apparatus is a thin film forming apparatus for forming a thin film on an inner surface of a hollow container. A metal container for containing microwaves, a vacuum chamber provided in the metal container and containing a hollow container therein, a source gas introduction pipe for introducing a source gas into the hollow container, a microwave oscillator, In a thin film deposition method for depositing a thin film on the inner surface of a hollow container using a thin film deposition apparatus comprising a waveguide for supplying a microwave from a microwave oscillator into the metal container,
Measure the thickness of the thin film on the surface of the hollow container after film formation,
The measured film thickness is fed back to generate a high-frequency current between the metal container and the hollow container and near the portion where the desired film thickness is not formed by microwaves in the metal container. A method of forming a thin film, comprising arranging a conductor that re-radiates microwaves by a high-frequency current.

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