JP4387085B2 - Die attach paste and semiconductor device - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide an insulating die-attach paste for a semiconductor excellent in reliability, and a semiconductor device excellent in reliability such as resistance to solder crack or the like. <P>SOLUTION: The insulating resin paste for semiconductor comprises (A) a thermo-setting resin and (B) a filler including organic resin particles. The (B) organic resin particle is preferably fin powder of polyorgano silsesquioxane cured powder having a structure wherein siloxane bond is crosslinked so as to have a shape of a three-dimensional mesh, or/and silicone rubber fine powder having a structure wherein straight chain type dimethyl polysiloxane is crosslinked, and/or the fine powder of silicone rubber which has a structure wherein the straight chain type dimethyl polysiloxane is crosslinked and the surface of which is coated with cured powder of polyorganosilsesquioxane having a structure wherein siloxane bond is crosslinked so as to have a shape of three-dimensional mesh. <P>COPYRIGHT: (C)2004,JPO

Description

[0001]
BACKGROUND OF THE INVENTION
The present invention relates to an insulating semiconductor resin paste for bonding a semiconductor element such as an IC or LSI to a metal frame or an organic substrate.
[0002]
[Prior art]
Conventionally, a semiconductor resin paste is generally used as a method for bonding a semiconductor element such as an IC to a metal frame or an organic substrate. In recent years, it has been necessary to change the solder reflow temperature from 220 to 245 ° C. to 260 to 270 ° C. in order to remove and eliminate lead from solder used when mounting a semiconductor device on a substrate as part of environmental measures. Resin pastes are increasingly required to withstand the increase in thermal stress that occurs with increasing solder reflow temperature.
[0003]
Furthermore, in the case of a diattach paste that reduces the elastic modulus and emphasizes low stress in order to cope with large semiconductor elements, the adhesive strength at high temperature is not sufficient and peeling occurs at the time of solder reflow at a high temperature of 260 to 270 ° C. In some cases, however, the semiconductor device has progressed to cracks in the semiconductor element, which is unsatisfactory in terms of reliability.
[0004]
[Problems to be solved by the invention]
An object of the present invention is to provide a semiconductor device having excellent reliability such as a die attach paste for an insulating semiconductor excellent in reliability and solder crack resistance.
[0005]
[Means for Solving the Problems]
The present invention
[1] A die attach paste comprising (A) a thermosetting resin composition and (B) organic resin particles, and bonding a semiconductor element to a metal frame or an organic substrate,
(B) the die attachment paste organic resin particles are characterized by a polyorganosilsesquioxane Powder having a crosslinked structure in the three-dimensional network of siloxane bonds (excluding those containing inorganic fillers),
[2] (B) the organic resin particles is an average particle size of and the maximum grain size of 50μm or less at 0.5 to 15 m [1], wherein the die attachment paste,
[3] A semiconductor device manufactured using the die attach paste according to [1] or [2].
[0006]
DETAILED DESCRIPTION OF THE INVENTION
The organic resin particles used in the present invention are characterized by being softer than inorganic particles and having excellent dispersibility in the resin.
[0007]
The thermosetting resin composition (A) used in the present invention is a general thermosetting resin composition comprising a thermosetting resin, a curing agent, a curing accelerator and the like, and is not particularly limited, but a paste. It is desirable that the material is liquid at room temperature.
[0008]
Examples of the liquid resin desirably used in the present invention include liquid cyanate resin, liquid epoxy resin, various radically polymerizable acrylic resins, triaryl isocyanurate having an aryl group, and the liquid epoxy resin includes bisphenol A. Type epoxy resin, bisphenol F type epoxy resin, bisphenol E type epoxy resin, alicyclic epoxy resin, aliphatic epoxy resin, glycidylamine type liquid epoxy resin, and the like.
[0009]
Examples of the curing catalyst for the cyanate resin include metal complexes such as copper acetylacetonate and zinc acetylacetonate.
Examples of the epoxy resin curing agent include aliphatic amines, aromatic amines, dicyandiamide, dicarboxylic acid dihydrazide compounds, and phenol resins. Examples of dihydrazide compounds include carboxylic acid dihydrazides such as adipic acid dihydrazide, dodecanoic acid dihydrazide, isophthalic acid dihydrazide, and P-oxybenzoic acid dihydrazide.
[0010]
Examples of the curing accelerator / curing agent include various imidazole compounds, such as 2-methylimidazole, 2-ethylimidazole, 2-phenylimidazole, 2-phenyl-4-methylimidazole, and 2-phenyl-4-. methyl-5-hydroxymethylimidazole, 2-phenyl-4,5-dihydroxy methyl imidazole, 2-C ₁₁ H ₂₃ - adds a generic imidazole or triazine and isocyanuric acid such as imidazole, to impart storage stability 2 , 4-Diamino-6- {2-methylimidazole- (1)}-ethyl-S-triazine, and its isocyanate adduct, etc., all of which can be used in combination with one or more. It is.
[0011]
In the present invention, it is also possible to mix and use a thermosetting resin component that is solid at room temperature to such an extent that characteristic deterioration does not occur. For example, aliphatic epoxies such as polyglycidyl ether, butanediol diglycidyl ether, neopentyl glycol diglycidyl ether obtained by the reaction of bisphenol A, bisphenol F, phenol novolak, cresol novolaks and epichlorohydrin, complex such as diglycidyl hydantoin There are alicyclic epoxies such as cyclic epoxy, vinylcyclohexene dioxide, dicyclopentadiene dioxide, alicyclic diepoxy adipate, and one or more of these can be used in combination.
[0012]
Examples of the (B) organic resin particles used in the present invention include silicone resins, phenol resins, fluororesins such as polytetrafluoroethylene, acrylic resins such as polymethyl methacrylate, benzoguanamine, cross-linked products of melamine and formaldehyde, and the like. It is done. More preferably fine particles of a silicone rubber with a polyorganosilsesquioxane oxa emissions Powder or / and linear dimethylpolysiloxane crosslinked structure having a structure in which organic resin particles to crosslink the siloxane bond in a three-dimensional network or in / and powder coated with polyorganosiloxane silsesquioxane emissions powder having a crosslinked structure of the surface of the fine powder of silicone rubber having a crosslinked structure a straight-chain dimethyl polysiloxane siloxane bond in a three-dimensional network is there.
As the shape of the organic resin particles (B) used in the present invention, flakes, scales, resins, spheres and the like are used. Depending on the viscosity of the required paste, the particle size to be used is different, but it is usually preferable that the average particle size is 0.5 to 15 μm and the maximum particle size is about 50 μm. If the average particle size is less than 0.5 μm, the viscosity will be high, and if it exceeds 15 μm, the resin will flow out during coating or curing, causing bleeding, which is not preferable. When the maximum particle size exceeds 50 μm, when applying the paste with a dispenser, the needle outlet is blocked and continuous use for a long time cannot be performed. Also, relatively coarse organic resin particles and fine organic resin particles can be mixed and used, and various kinds of shapes and shapes may be appropriately mixed.
The (B) organic resin particles used in the present invention may be those obtained by previously treating the surface with a silane coupling material such as alkoxysilane, acyloxysilane, silazane, organoaminosilane, or the like.
The semiconductor resin paste of the present invention can be obtained by a production method such as premixing the components (A) and (B) and other additives, kneading using a roll or the like, and degassing under vacuum. .
A known method can be used as a method of manufacturing the semiconductor device. The present invention will be specifically described below with reference to examples. The blending ratio is indicated by weight.
[0013]
【Example】
Examples 1-3, Comparative Examples 1-2
As component (A), diglycidyl bisphenol A obtained by reaction of bisphenol A and epichlorohydrin (epoxy equivalent 180, liquid at room temperature, hereinafter bis A epoxy), cresyl glycidyl ether (epoxy equivalent 185, hereinafter CGE), phenol novolak Resin (hydroxyl equivalent 104, softening point 85 ° C., hereinafter PN), 2-phenyl-4,5-dihydroxymethylimidazole (manufactured by Shikoku Kasei Kogyo Co., Ltd., Curesol 2PHZ), silane coupling agent having glycidyl group (Shin-Etsu Chemical) Kogyo KK, KBM-403E), the component (B) the average particle diameter of 2 [mu] m, polyorgano silsesquioxane emissions powder having a siloxane bond was crosslinked three-dimensional network structure of the maximum particle size 4μm as (hereinafter organic Resin particles A), straight chain with an average particle size of 5 μm and a maximum particle size of 10 μm Silicone rubber fine powder (hereinafter referred to as organic resin particle B) having a structure in which dimethylpolysiloxane is crosslinked, crushed silica powder (hereinafter referred to as inorganic particle A) having an average particle diameter of 3 μm, maximum particle diameter of 15 μm, average particle diameter of 1.5 μm, Spherical silica powder (hereinafter referred to as inorganic particles B) having a maximum particle size of 7 μm was blended as shown in Table 1 and kneaded using three rolls to obtain a paste after defoaming. The obtained paste was evaluated by the following method. The evaluation results are shown in Table 1.
[0014]
Evaluation Method / Viscosity: Using an E-type viscometer (3 ° cone), the value at 25 ° C. and 2.5 rpm was measured.
・ Elastic modulus: 10 × 150 × 0.1 mm test piece was prepared (curing condition 150 ° C., 15 minutes), the load-displacement curve was measured by a tensile test, and the elastic modulus was obtained from the initial gradient (measurement length: 100 mm, test speed) 1 mm / min, measurement temperature: 25 ° C.).
Solder crack resistance: Using the paste composition shown in Table 1, the silicon chip was cured and bonded under the following curing conditions. Then, using a sealing material of Sumicon EME-G770 (manufactured by Sumitomo Bakelite Co., Ltd.), the sealed package was subjected to moisture absorption treatment at 85 ° C., relative humidity 60%, 168 hours, and then IR reflow treatment (260 ° C., 10 seconds, (Reflow 3 times), and the degree of peeling of the treated package was measured with an ultrasonic flaw detector (transmission type). The case where the peeling area of the die attach part was less than 10% was regarded as acceptable.
Package: 35x35mm BGA
Chip size: 10x10mm
Curing conditions: 150C30 minutes [0015]
[Table 1]
[0016]
【The invention's effect】
The die attach paste of the present invention is an insulating semiconductor die attach paste excellent in reliability. As a result, a semiconductor device excellent in reliability such as solder crack resistance can be obtained.

Claims (3)

(A) A die attach paste that includes a thermosetting resin composition and (B) organic resin particles, and adheres a semiconductor element to a metal frame or an organic substrate,
(B) the die attachment paste organic resin particles are characterized by a polyorganosilsesquioxane Powder having a crosslinked structure in the three-dimensional network of siloxane bonds (excluding those containing inorganic fillers). (B) the organic resin particles is an average particle size of and the maximum grain size of 50μm or less in 0.5~15μm claim 1, wherein the die attachment paste. A semiconductor device manufactured using the die attach paste according to claim 1.