JP4333281B2 - 液浸光学系及び液体媒体並びに露光装置 - Google Patents
液浸光学系及び液体媒体並びに露光装置 Download PDFInfo
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- JP4333281B2 JP4333281B2 JP2003304492A JP2003304492A JP4333281B2 JP 4333281 B2 JP4333281 B2 JP 4333281B2 JP 2003304492 A JP2003304492 A JP 2003304492A JP 2003304492 A JP2003304492 A JP 2003304492A JP 4333281 B2 JP4333281 B2 JP 4333281B2
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- KRHYYFGTRYWZRS-UHFFFAOYSA-M Fluoride anion Chemical compound [F-] KRHYYFGTRYWZRS-UHFFFAOYSA-M 0.000 claims description 14
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Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/70341—Details of immersion lithography aspects, e.g. exposure media or control of immersion liquid supply
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- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Lenses (AREA)
Description
以下、この発明の実施の形態について説明する。
また、上記では、液体媒質と接する光学部材としてレンズの例について説明したが、液体媒質がミラー等の他の光学部材と接触した状態で配置されていてもよい。更に、例えば液体媒質中に複数の光学部材を浸漬する等、液体媒質が複数の光学部材と接触した状態で配置されていてもよい。
[実施の形態2]
[実施例1〜5、参考例1、2及び比較例]
[実施例6〜9及び比較例2]
11 レンズ
13 ウエハ
15 液体媒質
16 液浸光学系
Claims (10)
- 光学部材と、該光学部材に接した状態で光路中に配置された液体媒質とを有する液浸光学系において、
前記液体媒質が、光学部材の溶解を抑制できる成分を含有させた溶液からなり、
前記光学部材の溶解を抑制できる成分は、前記光学部材を構成する元素のイオンであることを特徴とする液浸光学系。 - 前記光学部材がCaF2からなるフッ化物を含み、前記液体媒質がCa2+及びF−を含有することを特徴とする請求項1に記載の液浸光学系。
- 前記光学部材がMgF2及び/又はLaF3からなるフッ化物を含み、前記液体媒質が前記光学部材に対応するMg2+及び/又はLa3+と、F−とを含有することを特徴とする請求項1又は2に記載の液浸光学系。
- 光学部材と、該光学部材に接した状態で光路中に配置された液体媒質とを有する液浸光学系において、
前記液体媒質が、前記光学部材の溶解を抑制できる成分を含有させた溶液からなり、
前記光学部材の溶解を抑制できる成分は、前記光学部材を構成する元素と同族の元素のイオンの少なくとも一つであることを特徴とする液浸光学系。 - 前記液体媒質が、照射される光に対して90%/mm以上の透過率を有することを特徴とする請求項1乃至4の何れか一つに記載の液浸光学系。
- 前記液体媒質に照射される光が、250nm以下の波長を有することを特徴とする請求項5に記載の液浸光学系。
- 前記液体媒質の前記フッ化物濃度が、飽和濃度の50%以上100%未満であることを特徴とする請求項2又は3に記載の液浸光学系。
- 前記液体媒質の前記フッ化物濃度が、飽和濃度であることを特徴とする請求項2又は3に記載の液浸光学系。
- 請求項1乃至8の何れか一つに記載の液浸光学系に用いる液体媒質。
- 請求項1乃至8の何れか一つに記載の液浸光学系を備えたことを特徴とする露光装置。
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JP2003304492A JP4333281B2 (ja) | 2003-08-28 | 2003-08-28 | 液浸光学系及び液体媒体並びに露光装置 |
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JP2003304492A JP4333281B2 (ja) | 2003-08-28 | 2003-08-28 | 液浸光学系及び液体媒体並びに露光装置 |
Publications (2)
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JP2005079140A JP2005079140A (ja) | 2005-03-24 |
JP4333281B2 true JP4333281B2 (ja) | 2009-09-16 |
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Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101776850B (zh) * | 2004-06-09 | 2013-03-20 | 尼康股份有限公司 | 曝光装置及元件制造方法 |
JP2006024692A (ja) | 2004-07-07 | 2006-01-26 | Toshiba Corp | レジストパターン形成方法 |
JP2006073967A (ja) * | 2004-09-06 | 2006-03-16 | Tokyo Ohka Kogyo Co Ltd | 液浸露光プロセス用浸漬液および該浸漬液を用いたレジストパターン形成方法 |
JP2006140429A (ja) * | 2004-10-13 | 2006-06-01 | Asahi Glass Co Ltd | 液浸型露光方法および液浸型露光用媒体 |
KR101105784B1 (ko) * | 2005-02-10 | 2012-01-17 | 에이에스엠엘 네델란즈 비.브이. | 침지 액체, 노광 장치, 및 노광 프로세스 |
US7317507B2 (en) * | 2005-05-03 | 2008-01-08 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
JP2007005731A (ja) * | 2005-06-27 | 2007-01-11 | Jsr Corp | 液浸露光用液体およびその精製方法 |
GB2457307A (en) * | 2008-02-11 | 2009-08-12 | Apollo Fire Detectors Ltd | Fire alarm signalling with voice modulated HF signal multiplexed on to plateaus of existing lower frequency pulses carried on power cabling |
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