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JP4242086B2 - Wire bond inspection apparatus and wire bond inspection method - Google Patents

Wire bond inspection apparatus and wire bond inspection method Download PDF

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Publication number
JP4242086B2
JP4242086B2 JP2001241949A JP2001241949A JP4242086B2 JP 4242086 B2 JP4242086 B2 JP 4242086B2 JP 2001241949 A JP2001241949 A JP 2001241949A JP 2001241949 A JP2001241949 A JP 2001241949A JP 4242086 B2 JP4242086 B2 JP 4242086B2
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bonding
wire
wire bond
shear
tester
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JP2003059982A (en
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健一 小森
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Mitsubishi Electric Corp
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Mitsubishi Electric Corp
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies
    • H01L24/78—Apparatus for connecting with wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45117—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
    • H01L2224/45124—Aluminium (Al) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/48455—Details of wedge bonds
    • H01L2224/48456—Shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/78—Apparatus for connecting with wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/852—Applying energy for connecting
    • H01L2224/85201—Compression bonding
    • H01L2224/85205—Ultrasonic bonding
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/859—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector involving monitoring, e.g. feedback loop
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/85909—Post-treatment of the connector or wire bonding area
    • H01L2224/8592—Applying permanent coating, e.g. protective coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01005—Boron [B]
    • H—ELECTRICITY
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    • H01L2924/01—Chemical elements
    • H01L2924/01013—Aluminum [Al]
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    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/013—Alloys
    • H01L2924/014—Solder alloys

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Investigating Materials By The Use Of Optical Means Adapted For Particular Applications (AREA)
  • Image Processing (AREA)
  • Wire Bonding (AREA)
  • Image Analysis (AREA)
  • Length Measuring Devices By Optical Means (AREA)

Abstract

PROBLEM TO BE SOLVED: To provide a equipment for inspecting wire bond in which bonding state at a wire bonded part can be grasped accurately even when the bonding width is wide and the bonding strength is high between a power chip and a bonding wire. SOLUTION: In a wire bond tester T, a chip 3 bonded with a wire 2 undergoes shear test by means of a shear tester 1. The shear tester 1 detects shear strength every moment while shearing a wire bonded part 2a and delivers shear strength data to a data processing computer 4. The data processing computer 4 calculates an integrated value of shear strength based on the shear strength data and grasps bonding state at the wire bonded part 2a quantitatively and accurately based on the integrated value of shear strength. Furthermore, an image processing computer grasps the bonding state at the wire bonded part 2a quantitatively based on the image of a bonding flaw picked up by means of a camera.

Description

【０００１】
【発明の属する技術分野】
本発明は、ワイヤボンド検査装置及びワイヤボンド検査方法に関するものであって、とくにエネルギ効率に優れた長寿命な電力用半導体の製造に資するためのワイヤボンド検査装置及びワイヤボンド検査方法に関するものである。
【０００２】
【従来の技術】
一般に、電力用半導体装置においては、パワーチップと、アルミニウムや金などからなるボンディングワイヤとが接合（ワイヤボンド接合）されている。かかるワイヤボンド接合は、例えば、ボンディングワイヤがアルミワイヤである場合は、パワーチップ上にアルミワイヤを配置した上で、このアルミワイヤに荷重と超音波エネルギとを印加してパワーチップとアルミワイヤとを接合するなどといった手法で行われる。
【０００３】
そして、かかるワイヤボンド接合が施された電力用半導体装置は、その品質ないしは信頼性を確保するために、適宜、その接合状態を検査しあるいは接合強度を測定することが必要である。そして、電力用半導体装置におけるパワーチップとボンディングワイヤとの接合状態の検査ないしは接合強度の測定、すなわちワイヤボンド検査は、従来、主としてプル強度テストないしはピールテストにより実施されている。
【０００４】
【発明が解決しようとする課題】
ところで、近年、パワーチップの長寿命化を図るためにパワーチップとボンディングワイヤとの接合幅（ワイヤつぶれ幅）が増加させられた結果、パワーチップとボンディングワイヤとの接合強度がかなり高くなっている。このため、プル強度テストないしはピールテストといった従来のワイヤボンド検査手法（接合状態確認手法）では、パワーチップとボンディングワイヤとの接合状態を定量的に把握することが困難であるといった問題がある。
【０００５】
また、ボンディングワイヤのパワーチップとの接合部（以下、「ワイヤ接合部」という。）をカッター等でせん断し、せん断時にカッター等に加えられた荷重、例えば最大荷重でもって接合状態を検査し、あるいは接合強度を測定するといったシェアテストも、上記ワイヤボンド検査として用いられている（例えば、特開平２−３０７０３９号公報参照）。なお、特開平６−２５２２２０号公報には、パッドとはんだとのはんだ接続面の接合状態を検査するシェアテスタが開示されている。しかしながら、最大荷重でもって接合状態を検査した場合、ワイヤ接合部の中央部が充分に接合されていない状態と、該中央部が充分に接合されている状態とが、同一レベルの強度として測定されるので、これらの差異を検出することができないといった問題がある。
【０００６】
なお、図５（ａ）に示すように、ワイヤ接合面１０（ワイヤ接合痕）の接合領域１０ａ内に比較的大きい未接合領域１０ｂが存在する状態が、ワイヤ接合部の中央部が充分に接合されていない状態である。このような接合状態では、パワーサイクル寿命が比較的短くなる。
また、図５（ｂ）に示すように、ワイヤ接合面１０の接合領域１０ａ内に存在する未接合領域１０ｂが比較的小さい状態が、ワイヤ接合部の中央部が充分に接合されている状態である。このような接合状態では、パワーサイクル寿命が比較的長くなる。
【０００７】
本発明は、上記従来の問題を解決するためになされたものであって、パワーチップとボンディングワイヤとの接合幅が長く、これらの接合強度が高い場合でも、ワイヤ接合部の接合状態（ワイヤ接合部の中央部の接合状態を含む）ないしは接合強度を正確に把握することができるワイヤボンド検査装置ないしはワイヤボンド検査方法を提供することを解決すべき課題とする。
【０００８】
【課題を解決するための手段】
上記課題を解決するためになされた本発明の第１の態様にかかるワイヤボンド検査装置は、（ｉ）ワイヤボンド接合部の接合状態をシェアテスタで検査する（すなわち、シェアテストを行う）ようになっているワイヤボンド検査装置において、（ｉｉ）シェアテスタが、ワイヤボンド接合部をせん断しつつ、経時的に複数のシェア強度を検出するようになっていて、（ｉｉｉ）シェアテスタによって検出されるシェア強度の時間に対する積分値を算出し、該積分値に基づいてワイヤボンド接合部の接合状態を定量的に把握するデータ処理用コンピュータが設けられていることを特徴とするものである。
【０００９】
本発明の第２の態様にかかるワイヤボンド検査装置は、本発明の第１の態様にかかるワイヤボンド検査装置において、（ｉｖ）シェアテスタによってワイヤボンド接合部がせん断された後（すなわち、シェアテスト後）、せん断面の接合痕を撮影するカメラと、（ｖ）カメラから出力される接合痕の画像データを取り込み、該画像データに二値化処理を施して、接合痕の面積と接合痕中のワイヤ残存部の面積とを算出し、接合痕の面積とワイヤ残存部の面積とに基づいてワイヤボンド接合部の接合状態を定量的に把握する画像処理用コンピュータとが設けられていることを特徴とするものである。なお、データ処理用コンピュータが画像処理用コンピュータを兼ねていてもよい。
【００１０】
本発明の第３の態様にかかるワイヤボンド検査装置は、本発明の第２の態様にかかるワイヤボンド検査装置において、画像処理用コンピュータが、ワイヤ残存部の面積と接合痕の面積との比に基づいてワイヤボンド接合部の接合状態を定量的に把握するようになっていることを特徴とするものである。
【００１１】
本発明の第４の態様にかかるワイヤボンド検査方法は、（ｉ）シェアテスタを用いてワイヤボンド接合部の接合状態を検査するようにしたワイヤボンド検査方法において、（ii）シェアテスタでワイヤボンド接合部をせん断しつつ、経時的に複数のシェア強度を検出するステップと、（iii）シェアテスタによって検出されるシェア強度の時間に対する積分値を算出するステップと、（iv）前記積分値に基づいてワイヤボンド接合部の接合状態を定量的に把握するステップとを含んでいることを特徴とするものである。
【００１２】
【発明の実施の形態】
以下、本発明の実施の形態を具体的に説明する。
なお、この実施の形態における電力用半導体装置は、詳しくは図示していないが、放熱を目的として配置された金属ベース板の表裏に、導電性のパターンが配置された絶縁基板等がハンダ付け等により搭載され、さらに絶縁基板のパターン上にパワーチップがハンダ付け等により搭載された積層構造のものである。
【００１３】
図１に示すように、ワイヤボンドテスタＴ（ワイヤボンド検査装置）にはシェアテスタ１が設けられ、このシェアテスタ１は、電力用半導体装置（図示せず）のワイヤ２（アルミワイヤ）とチップ３（パワーチップ）とに対してシェアテストを施すようになっている。すなわち、シェアテスタ１は、その基台１ｂの上にチップ３を固定した上で、シェアテスタ先端部１ａ（カッター）で、ワイヤ２とチップ３との接合部２ａ（以下、「ワイヤ接合部２ａ」という。）をせん断し、せん断時における時々刻々のシェア強度、すなわちシェアテスタ先端部１ａに加えられる荷重を測定することができるようになっている。
【００１４】
また、このワイヤボンドテスタＴにはデータ処理用コンピュータ４が設けられ、このデータ処理用コンピュータ４は、シェアテスタ１で測定されたシェア強度データ５に対して自動的に所定のデータ処理を施すようになっている。具体的には、シェアテスタ１から送られてくる時々刻々のシェア強度データ５（測定中のシェア強度推移データ）を積分処理し、シェア強度の時間についての積分値（以下、「シェア強度積分値」という。）を算出し、このシェア強度積分値に基づいてワイヤ２とチップ３との接合状態を検査し、あるいは接合強度を測定するようになっている。
【００１５】
図２に示すように、ワイヤボンドテスタＴには、さらにカメラ６(例えば、ＣＣＤカメラ、ビデオカメラ等）が設けられ、このカメラ６は、シェアテスタ１によってワイヤ接合部２ａがせん断された後（すなわち、シェアテスト後）のチップ３上の接合痕７を撮影する。なお、接合痕７は、ワイヤ２の痕跡が残存しているワイヤ残存部７ａと、ワイヤ２の痕跡が残存していないワイヤ非残存部７ｂとからなる。そして、カメラ６によって撮影された接合痕７の画像（画像データ）は、画像処理用コンピュータ８に送られる。画像処理用コンピュータ８は、カメラ６から送られてきた画像データに対して、自動的に二値化処理を施して接合痕７の面積とワイヤ残存部７ａの面積とを算出することができるようになっている。なお、ワイヤ非残存部７ｂの面積は、接合痕７の面積からワイヤ残存部７ａの面積を減算することにより求めることができる。
【００１６】
以下、このワイヤボンドテスタＴを用いたワイヤボンド検査方法を、具体的に説明する。
図３に示すように、アルミニウムからなるワイヤ２は、超音波ワイヤボンディングによりチップ３に接合されているが、該チップ３（パワーチップ）の長寿命化を図るために、チップ３とワイヤ２との接合幅（ワイヤつぶれ幅）、すなわち図３中における位置関係においてワイヤ接合部２ａの左右の長さが比較的長くなっている。このため、ワイヤ２とチップ３との接合強度が高くなっている。したがって、従来のプル強度テストあるいはピールテストでは、接合状態ないしは接合強度を定量的に把握することは困難である。
【００１７】
そして、ワイヤボンド検査（ワイヤボンド接合状態検査）を行う際には、まず、テストワイヤ２がボンディング（接合）されたチップ３（被接合部）を、シェアテスタ１の基台１ｂ上の所定位置に固定して配置する。次に、シェアテスタ先端部１ａを、ワイヤ２とチップ３との接合面に近接した位置においてワイヤ接合部２ａに対して矢印Ｘで示す方向、すなわちせん断方向に一定速度で移動させ、ワイヤ接合部２ａをせん断する。そして、せん断時における時々刻々のシェア強度、すなわちシェアテスタ先端部１ａに加えられる荷重が検出（測定）される。このようにしてシェアテスタ１によって検出されたシェア強度データは、データ処理用コンピュータ４に送られる。
【００１８】
データ処理用コンピュータ４では、シェアテスタ１から送られてくる時々刻々のシェア強度データ５を、自動的に、所定のソフトウエアを用いて積分処理し、シェア強度の時間についての積分値（以下、「シェア強度積分値」という。）を算出する。さらに、データ処理用コンピュータ４は、このシェア強度積分値に基づいて、自動的にワイヤ２とチップ３との接合状態を検査し、あるいは接合強度を測定する。
なお、シェアテスタ先端部１ａは一定速度で移動するので、せん断長は時間に比例する。したがって、時間に代えてせん断長を用いてもよい。
【００１９】
他方、シェアテスタ１によってワイヤ接合部２ａがせん断されたチップ３上の接合痕７が、カメラ６によって撮影される。そして、カメラ６から出力される接合痕７の画像データは、画像処理用コンピュータ８に送られる。画像処理用コンピュータ８は、カメラ６から送られてきた画像データに対して、自動的に二値化処理を施して、接合痕７の面積とワイヤ残存部７ａの面積とを算出する。そして、自動的にワイヤ残存部７ａの面積と接合痕７の面積との比に基づいてワイヤ２とチップ３との接合状態ないしは接合強度を把握する。
なお、データ処理用コンピュータ４が画像処理用コンピュータ８を兼ねるようにしてもよい。
【００２０】
図４（ａ）に、ワイヤ接合部２ａの中央部の接合状態が悪いチップ３に対して前記のワイヤボンド検査が行われた場合における、接合痕７の状態と、シェア強度データ５、すなわちシェア強度の時間に対する変化特性とを示す。
また、図４（ｂ）に、ワイヤ接合部２ａの中央部の接合状態が良好なチップ３に対して前記のワイヤボンド検査が行われた場合における、接合痕７の状態と、シェア強度データ５とを示す。
【００２１】
図４（ａ）から明らかなとおり、ワイヤ接合部２ａの中央部の接合状態が悪い場合、すなわち接合面１０の接合領域１０ａ内に存在する未接合領域１０ｂが比較的大きい場合は、ワイヤ残存部７ａの面積と接合痕７の面積との比、すなわち、ワイヤ残存部７ａの面積を接合痕７の面積で除算した値（以下、「残存面積比」という。）が比較的小さくなる。かつ、シェア強度積分値Ｓ１が比較的小さくなる。なお、接合領域１０ａと未接合領域１０ｂとを含む接合面１０は、ピンセット等を用いてワイヤ接合部２ａをチップ３から引き剥がしたときにあらわれる接合痕である。
【００２２】
他方、図４（ｂ）から明らかなとおり、ワイヤ接合部２ａの中央部の接合状態が良好な場合、すなわち接合面１０の接合領域１０ａ内に存在する未接合領域１０ｂが比較的小さい場合（すなわち、ほぼ全面接合している場合）は、残存面積比が比較的大きくなる。かつ、シェア強度積分値Ｓ２が比較的大きくなる。
【００２３】
つまり、このワイヤボンドテスタＴないしはワイヤボンド検査方法によれば、ワイヤ接合部２ａの中央部の接合状態が良好なときほど、残存面積比が大きくなり、かつシェア強度積分値が大きくなる。したがって、残存面積比及びシェア強度積分値の両方、あるいはそのいずれか一方に基づいて、自動的にワイヤ接合部２ａの中央部の接合状態を定量的に把握することができる。なお、残存面積比及びシェア強度積分値の両方を用いれば、いずれか一方のみを用いる場合に比べて、接合状態をより正確に把握することができるのはもちろんである。
【００２４】
以上、このワイヤボンドテスタＴないしはワイヤボンド検査方法によれば、単純にシェア強度に基づいて、例えば最大シェア強度に基づいて接合状態を検査する場合に比べて、接合状態をより正確に定量的に把握することができる。したがって、このようにしてワイヤボンド検査が行われた製品と同等の製品についてチップ試験（パワーチップ試験）を実施してチップ寿命を測定し、そのチップの接合状態のデータとチップ寿命のデータとの相関性を求めることにより、このようなチップを組み込んだ製品、すなわち電力半導体装置の品質管理をより容易に、かつより精密に行うことができる。このため、チップの長寿命化を図ることができ、ひいては電力用半導体装置の信頼性を高めることができる。
【００２５】
【発明の効果】
本発明の第１の態様にかかる、シェアテスタを備えたワイヤボンド検査装置によれば、データ処理用コンピュータによって、自動的に、シェア強度積分値に基づいてワイヤボンド接合部の接合状態が定量的に把握される。このため、チップとボンディングワイヤとの接合幅が長く、これらの接合強度が高い場合でも、ワイヤボンド接合部の接合状態ないしは接合強度を正確に、かつ容易に把握することができる。
【００２６】
本発明の第２の態様にかかる、シェアテスタを備えたワイヤボンド検査装置によれば、データ処理用コンピュータによって、第１の態様にかかるワイヤボンド検査装置の場合と同様にワイヤボンド接合部の接合状態が定量的に把握される。さらに、画像処理用コンピュータによって、自動的に、接合痕の面積とワイヤ残存部の面積とに基づいてワイヤボンド接合部の接合状態が定量的に把握される。このため、チップとボンディングワイヤとの接合幅が長く、これらの接合強度が高い場合でも、ワイヤボンド接合部の接合状態ないしは接合強度を正確に、かつ容易に把握することができる。
【００２７】
本発明の第３の態様にかかる、シェアテスタを備えたワイヤボンド検査装置によれば、まずもって、本発明の第２の態様にかかるワイヤボンド検査装置の場合と同様の作用・効果が得られる。さらに、残存面積比（ワイヤ残存部の面積と接合痕の面積との単純な比）に基づいてワイヤボンド接合部の接合状態が把握されるので、画像処理用コンピュータの演算ロジックが簡素なものとなる。
【００２８】
本発明の第４の態様にかかる、シェアテスタを用いたワイヤボンド検査方法によれば、シェア強度積分値に基づいてワイヤボンド接合部の接合状態を定量的に把握することができる。このため、チップとボンディングワイヤとの接合幅が長く、これらの接合強度が高い場合でも、ワイヤボンド接合部の接合状態ないしは接合強度を正確に、かつ容易に把握することができる。
【図面の簡単な説明】
【図１】 本発明の実施の形態にかかるワイヤボンドテスタのシステム構成を示す模式図である。
【図２】 図１に示すワイヤボンドテスタを構成するカメラ及び画像処理用コンピュータの模式図である。
【図３】 図１に示すワイヤボンドテスタを構成するシェアテスタにおけるシェアテスタ先端部の動作態様を示す立面図である。
【図４】 （ａ）はワイヤ接合部の中央部の接合状態が悪いチップに対してワイヤボンド検査が行われた場合における、接合痕の状態とシェア強度データとを示す図であり、（ｂ）はワイヤ接合部の中央部の接合状態が良好なチップに対してワイヤボンド検査が行われた場合における、接合痕の状態とシェア強度データとを示す図である。
【図５】 （ａ）は接合領域に取り囲まれた未接合領域が大きい場合の接合面の模式図であり、（ｂ）は接合領域に取り囲まれた未接合領域が小さい場合の接合面の模式図である。
【符号の説明】
Ｔ ワイヤボンドテスタ、 １ シェアテスタ、 １ａ シェアテスタ先端部、 １ｂ 基台、 ２ ワイヤ（アルミワイヤ）、 ２ａ ワイヤ接合部、 ３ チップ（パワーチップ）、 ４ データ処理用コンピュータ、 ５ シェア強度データ、 ６ カメラ、 ７ 接合痕、 ７ａ ワイヤ残存部、 ７ｂ ワイヤ非残存部、 ８ 画像処理用コンピュータ、 １０ 接合面、 １０ａ 接合領域、 １０ｂ 未接合領域。[0001]
BACKGROUND OF THE INVENTION
The present invention relates to a wire bond inspection apparatus and a wire bond inspection method, and more particularly to a wire bond inspection apparatus and a wire bond inspection method for contributing to the production of a long-life power semiconductor excellent in energy efficiency. .
[0002]
[Prior art]
In general, in a power semiconductor device, a power chip and a bonding wire made of aluminum, gold, or the like are bonded (wire bond bonding). For example, when the bonding wire is an aluminum wire, the wire bonding is performed by placing a load and ultrasonic energy on the aluminum wire after placing the aluminum wire on the power chip. It is performed by a technique such as joining.
[0003]
In order to ensure the quality or reliability of the power semiconductor device subjected to such wire bond bonding, it is necessary to appropriately inspect the bonding state or measure the bonding strength. Conventionally, the inspection of the bonding state between the power chip and the bonding wire in the power semiconductor device or the measurement of the bonding strength, that is, the wire bond inspection, has been performed mainly by a pull strength test or a peel test.
[0004]
[Problems to be solved by the invention]
By the way, in recent years, as a result of increasing the bonding width (wire crushing width) between the power chip and the bonding wire in order to extend the life of the power chip, the bonding strength between the power chip and the bonding wire is considerably increased. . For this reason, there is a problem that it is difficult to quantitatively grasp the bonding state between the power chip and the bonding wire in the conventional wire bond inspection method (bonding state confirmation method) such as a pull strength test or a peel test.
[0005]
Further, the bonding portion of the bonding wire with the power chip (hereinafter referred to as “wire bonding portion”) is sheared with a cutter or the like, and the bonding state is inspected with a load applied to the cutter or the like at the time of shearing, for example, the maximum load, Alternatively, a shear test in which the bonding strength is measured is also used as the wire bond inspection (for example, see Japanese Patent Laid-Open No. 2-307039). Japanese Patent Laid-Open No. 6-252220 discloses a shear tester for inspecting the bonding state of the solder connection surface between the pad and the solder. However, when the bonding state is inspected with the maximum load, the state where the central portion of the wire bonding portion is not sufficiently bonded and the state where the central portion is sufficiently bonded are measured as the same level of strength. Therefore, there is a problem that these differences cannot be detected.
[0006]
As shown in FIG. 5 (a), the state in which the relatively large unbonded region 10b exists in the bonding region 10a of the wire bonding surface 10 (wire bonding trace) is sufficiently bonded at the center of the wire bonding portion. It is a state that has not been done. In such a joined state, the power cycle life is relatively short.
Further, as shown in FIG. 5B, the state where the unbonded region 10b existing in the bonding region 10a of the wire bonding surface 10 is relatively small is the state where the central portion of the wire bonding portion is sufficiently bonded. is there. In such a joined state, the power cycle life is relatively long.
[0007]
The present invention has been made in order to solve the above-described conventional problems. Even when the bonding width between the power chip and the bonding wire is long and the bonding strength thereof is high, the bonding state of the wire bonding portion (wire bonding) It is an object to be solved to provide a wire bond inspection apparatus or a wire bond inspection method capable of accurately grasping the bonding strength).
[0008]
[Means for Solving the Problems]
The wire bond inspection apparatus according to the first aspect of the present invention, which has been made to solve the above problems, is (i) inspecting the bonding state of the wire bond bonding portion with a shear tester (that is, performing a shear test). (Ii) The shear tester detects a plurality of shear strengths over time while shearing the wire bond joint, and (iii) is detected by the shear tester. A data processing computer is provided that calculates an integrated value of the shear strength with respect to time and quantitatively grasps the bonding state of the wire bond bonding portion based on the integrated value.
[0009]
Wire bonding inspecting apparatus according to a second aspect of the present invention, in the wire bonding inspecting apparatus that written to a first aspect of the present invention, after the wire bonding joint is sheared by (iv) share tester (i.e., After the share test), a camera that captures the joint trace on the shear surface, and ( v ) the image data of the joint trace output from the camera is captured, and binarization processing is performed on the image data to determine the area of the joint trace and the joint An image processing computer is provided that calculates the area of the wire remaining portion in the trace and quantitatively grasps the bonding state of the wire bond joint portion based on the area of the bonding trace and the area of the wire remaining portion. It is characterized by this. Note that the data processing computer may also serve as the image processing computer.
[0010]
The wire bond inspection apparatus according to the third aspect of the present invention is the wire bond inspection apparatus according to the second aspect of the present invention, wherein the image processing computer uses a ratio of the area of the remaining wire portion to the area of the bonding trace. Based on this, the bonding state of the wire bond bonding portion is quantitatively grasped.
[0011]
A wire bond inspection method according to a fourth aspect of the present invention includes: (i) a wire bond inspection method that uses a shear tester to inspect a bonding state of a wire bond joint portion; Detecting a plurality of shear strengths over time while shearing the joint; (iii) calculating an integral value with respect to time of the shear strength detected by the shear tester; and (iv) based on the integral value. And a step of quantitatively grasping the bonding state of the wire bond bonding portion.
[0012]
DETAILED DESCRIPTION OF THE INVENTION
Hereinafter, embodiments of the present invention will be specifically described.
The power semiconductor device in this embodiment is not shown in detail, but an insulating substrate having a conductive pattern disposed on the front and back of a metal base plate disposed for the purpose of heat dissipation is soldered, etc. And a laminated structure in which a power chip is mounted on a pattern of an insulating substrate by soldering or the like.
[0013]
As shown in FIG. 1, the wire bond tester T (wire bond inspection apparatus) is provided with a shear tester 1, and this shear tester 1 includes a wire 2 (aluminum wire) and a chip of a power semiconductor device (not shown). 3 (power chip) and share test. That is, in the shear tester 1, the chip 3 is fixed on the base 1b, and the shear tester tip 1a (cutter) is used to connect the wire 2 and the chip 3 to the joint 2a (hereinafter referred to as “wire joint 2a”). The shear strength at the time of shearing, that is, the load applied to the shear tester tip 1a can be measured.
[0014]
Further, the wire bond tester T is provided with a data processing computer 4, and the data processing computer 4 automatically performs predetermined data processing on the shear strength data 5 measured by the shear tester 1. It has become. Specifically, the share strength data 5 (share strength transition data being measured) sent from the shear tester 1 every moment is integrated, and the integral value of the share strength time (hereinafter referred to as “share strength integral value”). And the bonding state of the wire 2 and the chip 3 is inspected or the bonding strength is measured based on the integrated value of the shear strength.
[0015]
As shown in FIG. 2, the wire bond tester T is further provided with a camera 6 (for example, a CCD camera, a video camera, etc.). The camera 6 is subjected to shearing of the wire joint 2 a by the shear tester 1 ( That is, the joint mark 7 on the chip 3 is photographed after the shear test. The bonding trace 7 includes a wire remaining portion 7a where the trace of the wire 2 remains and a wire non-remaining portion 7b where the trace of the wire 2 does not remain. The image (image data) of the joint mark 7 photographed by the camera 6 is sent to the image processing computer 8. The image processing computer 8 can automatically binarize the image data sent from the camera 6 to calculate the area of the bonding mark 7 and the area of the remaining wire portion 7a. It has become. The area of the wire non-remaining portion 7b can be obtained by subtracting the area of the wire remaining portion 7a from the area of the bonding trace 7.
[0016]
Hereinafter, a wire bond inspection method using this wire bond tester T will be specifically described.
As shown in FIG. 3, the wire 2 made of aluminum is bonded to the chip 3 by ultrasonic wire bonding. In order to extend the life of the chip 3 (power chip), the chip 3 and the wire 2 , The left and right lengths of the wire bonding portion 2a are relatively long in the positional relationship in FIG. For this reason, the bonding strength between the wire 2 and the chip 3 is high. Therefore, in the conventional pull strength test or peel test, it is difficult to quantitatively grasp the bonding state or bonding strength.
[0017]
When performing wire bond inspection (wire bond bonding state inspection), first, the chip 3 (bonded portion) to which the test wire 2 is bonded (bonded) is placed at a predetermined position on the base 1 b of the shear tester 1. Place it fixed to. Next, the shear tester tip 1a is moved at a constant speed in the direction indicated by the arrow X, that is, in the shear direction, with respect to the wire joint 2a at a position close to the joint surface between the wire 2 and the chip 3. Shear 2a. Then, the shear strength every moment during shearing, that is, the load applied to the shear tester tip 1a is detected (measured). The share strength data detected by the share tester 1 in this way is sent to the data processing computer 4.
[0018]
The data processing computer 4 automatically integrates the moment-in-time share strength data 5 sent from the share tester 1 by using predetermined software, and integrates the value of the share strength with respect to time (hereinafter, referred to as “intensity value”). "Share strength integrated value") is calculated. Further, the data processing computer 4 automatically inspects the bonding state of the wire 2 and the chip 3 or measures the bonding strength based on the shear strength integrated value.
Since the shear tester tip 1a moves at a constant speed, the shear length is proportional to time. Therefore, the shear length may be used instead of the time.
[0019]
On the other hand, a joint mark 7 on the chip 3 in which the wire joint portion 2 a is sheared by the shear tester 1 is photographed by the camera 6. The image data of the joint mark 7 output from the camera 6 is sent to the image processing computer 8. The image processing computer 8 automatically performs binarization processing on the image data sent from the camera 6 to calculate the area of the bonding trace 7 and the area of the remaining wire portion 7a. Then, the bonding state or bonding strength between the wire 2 and the chip 3 is automatically grasped based on the ratio between the area of the wire remaining portion 7a and the area of the bonding mark 7.
The data processing computer 4 may also serve as the image processing computer 8.
[0020]
FIG. 4A shows the state of the bonding mark 7 and the shear strength data 5, that is, the shear when the wire bond inspection is performed on the chip 3 having a poor bonding state at the center of the wire bonding portion 2a. The change characteristic with respect to time of an intensity | strength is shown.
FIG. 4B shows the state of the bonding marks 7 and the shear strength data 5 when the wire bond inspection is performed on the chip 3 in which the bonding state at the center of the wire bonding portion 2a is good. It shows.
[0021]
As apparent from FIG. 4A, when the bonding state of the central portion of the wire bonding portion 2a is poor, that is, when the unbonded region 10b existing in the bonding region 10a of the bonding surface 10 is relatively large, the wire remaining portion The ratio between the area of 7a and the area of the bonding mark 7, that is, the value obtained by dividing the area of the remaining wire portion 7a by the area of the bonding mark 7 (hereinafter referred to as “residual area ratio”) becomes relatively small. In addition, the share intensity integral value S1 becomes relatively small. The bonding surface 10 including the bonding area 10a and the non-bonding area 10b is a bonding mark that appears when the wire bonding portion 2a is peeled off from the chip 3 using tweezers or the like.
[0022]
On the other hand, as is apparent from FIG. 4B, when the bonding state of the central portion of the wire bonding portion 2a is good, that is, when the unbonded region 10b existing in the bonding region 10a of the bonding surface 10 is relatively small (that is, In the case of almost entire surface bonding), the remaining area ratio becomes relatively large. In addition, the share intensity integral value S2 becomes relatively large.
[0023]
That is, according to the wire bond tester T or the wire bond inspection method, the remaining area ratio increases and the shear strength integrated value increases as the bonding state of the central portion of the wire bonding portion 2a becomes better. Therefore, it is possible to automatically grasp the bonding state of the central portion of the wire bonding portion 2a automatically based on both or either of the remaining area ratio and the shear strength integrated value. Of course, if both the residual area ratio and the shear strength integrated value are used, it is possible to grasp the bonding state more accurately than when only one of them is used.
[0024]
As described above, according to the wire bond tester T or the wire bond inspection method, the bonding state is more accurately and quantitatively based on the shear strength, for example, compared to the case where the bonding state is inspected based on the maximum shear strength. I can grasp it. Therefore, a chip test (power chip test) is performed on a product equivalent to the product subjected to the wire bond inspection in this way to measure the chip life, and the bonding state data and chip life data of the chip are measured. By obtaining the correlation, quality control of a product incorporating such a chip, that is, a power semiconductor device, can be performed more easily and more precisely. For this reason, the life of the chip can be extended, and as a result, the reliability of the power semiconductor device can be improved.
[0025]
【The invention's effect】
According to the wire bond inspection apparatus equipped with the shear tester according to the first aspect of the present invention, the bonding state of the wire bond joint is quantitatively automatically based on the shear strength integrated value by the data processing computer. To be grasped. For this reason, even when the bonding width between the chip and the bonding wire is long and the bonding strength thereof is high, the bonding state or bonding strength of the wire bond bonding portion can be accurately and easily grasped.
[0026]
According to the wire bond inspection apparatus including the shear tester according to the second aspect of the present invention, the bonding of the wire bond joint portion is performed by the data processing computer as in the case of the wire bond inspection apparatus according to the first aspect. The state is grasped quantitatively. Furthermore, the image processing computer automatically grasps the bonding state of the wire bond bonding portion quantitatively based on the area of the bonding trace and the area of the remaining wire portion. For this reason, even when the bonding width between the chip and the bonding wire is long and the bonding strength thereof is high, the bonding state or bonding strength of the wire bond bonding portion can be accurately and easily grasped.
[0027]
According to the wire bond inspection apparatus provided with the shear tester according to the third aspect of the present invention, first, the same operation and effect as in the case of the wire bond inspection apparatus according to the second aspect of the present invention can be obtained. . Furthermore, since the bonding state of the wire bond bonding portion is grasped based on the remaining area ratio (simple ratio between the area of the wire remaining portion and the area of the bonding trace), the arithmetic logic of the image processing computer is simplified. Become.
[0028]
According to the wire bond inspection method using the shear tester according to the fourth aspect of the present invention, it is possible to quantitatively grasp the bonding state of the wire bond bonding portion based on the shear strength integrated value. For this reason, even when the bonding width between the chip and the bonding wire is long and the bonding strength thereof is high, the bonding state or bonding strength of the wire bond bonding portion can be accurately and easily grasped.
[Brief description of the drawings]
FIG. 1 is a schematic diagram showing a system configuration of a wire bond tester according to an embodiment of the present invention.
FIG. 2 is a schematic diagram of a camera and an image processing computer that constitute the wire bond tester shown in FIG. 1;
FIG. 3 is an elevational view showing an operation mode of a tip portion of the shear tester in the shear tester constituting the wire bond tester shown in FIG. 1;
4A is a diagram showing the state of bonding marks and shear strength data when a wire bond inspection is performed on a chip having a poor bonding state at the center of the wire bonding portion, FIG. ) Is a diagram showing the state of bond marks and shear strength data when a wire bond inspection is performed on a chip having a good bonding state at the center of the wire bonding portion.
5A is a schematic diagram of a bonding surface when a non-bonded region surrounded by a bonding region is large, and FIG. 5B is a schematic diagram of a bonding surface when a non-bonded region surrounded by the bonding region is small. FIG.
[Explanation of symbols]
T wire bond tester, 1 shear tester, 1a shear tester tip, 1b base, 2 wire (aluminum wire), 2a wire joint, 3 chip (power chip), 4 data processing computer, 5 share strength data, 6 Camera, 7 bonding trace, 7a wire remaining part, 7b wire non-remaining part, 8 image processing computer, 10 bonding surface, 10a bonding area, 10b unbonded area.

Claims (4)

ワイヤボンド接合部の接合状態をシェアテスタで検査するようになっているワイヤボンド検査装置において、
前記シェアテスタが、ワイヤボンド接合部をせん断しつつ、経時的に複数のシェア強度を検出するようになっていて、
前記シェアテスタによって検出されるシェア強度の時間に対する積分値を算出し、該積分値に基づいてワイヤボンド接合部の接合状態を定量的に把握するデータ処理用コンピュータが設けられていることを特徴とするワイヤボンド検査装置。In the wire bond inspection device that is designed to inspect the bonding state of the wire bond joint with a shear tester,
The shear tester is adapted to detect a plurality of shear strengths over time while shearing the wire bond joint,
A data processing computer is provided that calculates an integral value with respect to time of the shear strength detected by the shear tester, and quantitatively grasps the bonding state of the wire bond joint based on the integral value. Wire bond inspection device. 前記シェアテスタによってワイヤボンド接合部がせん断された後、せん断面の接合痕を撮影するカメラと、
前記カメラから出力される接合痕の画像データを取り込み、該画像データに二値化処理を施して、接合痕の面積と接合痕中のワイヤ残存部の面積とを算出し、接合痕の面積とワイヤ残存部の面積とに基づいてワイヤボンド接合部の接合状態を定量的に把握する画像処理用コンピュータとが設けられていることを特徴とする請求項１に記載のワイヤボンド検査装置。After the wire bond joint is sheared by the shear tester, a camera for photographing the joint trace of the shear surface,
The image data of the bonding trace output from the camera is captured, the image data is subjected to binarization processing, and the area of the bonding trace and the area of the wire remaining portion in the bonding trace are calculated. The wire bond inspection apparatus according to claim 1, further comprising an image processing computer that quantitatively grasps a bonding state of the wire bond bonding portion based on an area of the wire remaining portion. 前記画像処理用コンピュータが、ワイヤ残存部の面積と接合痕の面積との比に基づいてワイヤボンド接合部の接合状態を定量的に把握するようになっていることを特徴とする請求項２に記載のワイヤボンド検査装置。The image processing computer may be based on the ratio between the area of the remaining wire portion and the area of the bonding mark are adapted to quantitatively grasp the bonding state of the wire bonding joints to claim 2, wherein The wire bond inspection apparatus of description. シェアテスタを用いてワイヤボンド接合部の接合状態を検査するようにしたワイヤボンド検査方法において、
前記シェアテスタでワイヤボンド接合部をせん断しつつ、経時的に複数のシェア強度を検出するステップと、
前記シェアテスタによって検出されるシェア強度の時間に対する積分値を算出するステップと、
前記積分値に基づいてワイヤボンド接合部の接合状態を定量的に把握するステップとを含んでいることを特徴とするワイヤボンド検査方法。In the wire bond inspection method in which the joint state of the wire bond joint is inspected using a shear tester,
While shearing the wire bond joint with the shear tester, detecting a plurality of shear strengths over time;
Calculating an integral value with respect to time of the shear strength detected by the shear tester;
And a step of quantitatively grasping a bonding state of the wire bond bonding portion based on the integrated value.
JP2001241949A 2001-08-09 2001-08-09 Wire bond inspection apparatus and wire bond inspection method Expired - Lifetime JP4242086B2 (en)

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