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JP4209765B2 - Terahertz wave imaging device - Google Patents

Terahertz wave imaging device Download PDF

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JP4209765B2
JP4209765B2 JP2003436901A JP2003436901A JP4209765B2 JP 4209765 B2 JP4209765 B2 JP 4209765B2 JP 2003436901 A JP2003436901 A JP 2003436901A JP 2003436901 A JP2003436901 A JP 2003436901A JP 4209765 B2 JP4209765 B2 JP 4209765B2
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terahertz wave
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潤一 西澤
建 須藤
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本発明はレーザ光源を使ったテラヘルツ帯コヒーレント電磁波発生照射方法及び装置に関する。  The present invention relates to a terahertz band coherent electromagnetic wave generation irradiation method and apparatus using a laser light source.

波長可変レーザを用いて誘電体LiNbOや半導体GaP結晶などのテラヘルツ電磁波発生用結晶から周波数可変で単一周波数のコヒーレントテラヘルツを発生させることが可能となり、これらをテラヘルツ光源として、生体分子の同定、ガン細胞の検出、IC部品検査などに役立てることができる。すなわち、生体やがん細胞のテラヘルツ共振周波数にあわせて、検体のテラヘルツ帯画像を得る。このため、テラヘルツビームを局所的に照射し、検体を乗せたステージを移動させることにより画像を得ている。Using a wavelength tunable laser, it becomes possible to generate a single-frequency coherent terahertz with a variable frequency from a terahertz electromagnetic wave generating crystal such as a dielectric LiNbO 3 or a semiconductor GaP crystal. It can be used for cancer cell detection, IC component inspection, and the like. That is, a terahertz band image of the specimen is obtained in accordance with the terahertz resonance frequency of the living body or cancer cell. For this reason, an image is obtained by locally irradiating a terahertz beam and moving the stage on which the specimen is placed.

従来の画像を得る方法ではポンプ光源として用いるYAGレーザはフラッシュランプで励起され、繰り返し周波数が10Hzから20Hzであった。また、画像のS/Nを損なわないためには高感度のシリコンボロメータを使わざるを得なかった。シリコンボロメータは液体ヘリウムを使用するので簡便さにかけていた。一方、室温で動作する焦電検知器DTGSはシリコンボロメータに比べて感度が1/1,000程度しかないためS/Nが低く、数十パルス積分しないと画像の1ポイントの測定データが得られなかった。1ポイント当たり、数秒要するからポイント数1,000の画像を得ようとする場合1時間以上も必要としていた。  In a conventional method for obtaining an image, a YAG laser used as a pump light source is excited by a flash lamp, and a repetition frequency is 10 Hz to 20 Hz. Moreover, in order not to impair the S / N of the image, a high-sensitivity silicon bolometer has to be used. The silicon bolometer uses liquid helium, so it has been simplified. On the other hand, the pyroelectric detector DTGS operating at room temperature has a low S / N because it has a sensitivity of only about 1/1000 compared to a silicon bolometer. There wasn't. Since it takes several seconds per point, it takes 1 hour or more to obtain an image having 1,000 points.

また、従来のテラヘルツ画像装置においては周波数可変範囲が0.7THzから2.5THz程度の範囲であった。遺伝子異常などに関係する生体分子の固有振動帯は分子間相互作用に基づくものであり、0.1THzから6THz程度まで分布している。従って、テラヘルツ周波数範囲より大幅に広げて、各異なる周波数で画像を得なければ、多くの分子種を明確に識別した画像を得ることは困難であった。  In the conventional terahertz image device, the frequency variable range is about 0.7 THz to 2.5 THz. The natural vibration bands of biomolecules related to gene abnormalities are based on intermolecular interactions and are distributed from about 0.1 THz to about 6 THz. Therefore, it is difficult to obtain an image in which many molecular species are clearly identified unless the image is obtained at a different frequency by significantly extending from the terahertz frequency range.

本発明はこの様な欠点を除去し、高速で鮮明で可変周波数域の広い画像を得る簡便な方法及び装置を提供する。  The present invention eliminates such drawbacks and provides a simple method and apparatus for obtaining a clear image at a high speed and a wide variable frequency range.

ポンプ光レーザ、信号光レーザはいずれも半導体レーザで励起されることにより、高速繰り返し周波数を得る。この二つのビームを高出力広周波数帯域特性を有するテラヘルツ電磁波発生用結晶に入射する。前記結晶は放熱マウント上に設置されており、高い平均パワが入射しても、温度上昇によるラヘルツ波発生効率の低下を生じないので、高速鮮明なテラヘルツ画像が得られる。  Both the pump light laser and the signal light laser are excited by a semiconductor laser to obtain a high repetition rate. These two beams are incident on a terahertz electromagnetic wave generating crystal having high output and wide frequency band characteristics. The crystal is placed on a heat dissipating mount, and even if high average power is incident, the lahertz wave generation efficiency does not decrease due to temperature rise, so that a high-speed and clear terahertz image can be obtained.

本発明は、広い範囲のテラヘルツ周波数において、高速度で鮮明なテラヘルツ帯の画像を可変単一周波数において得る簡便な手段を提供する。  The present invention provides a simple means for obtaining a clear, high-speed terahertz band image at a variable single frequency over a wide range of terahertz frequencies.

発明を実施するための最良の形態、実施例1Best Mode for Carrying Out the Invention, Example 1

図1は本発明の構成の代表例である。テラヘルツ電磁波発生用結晶1はGaP結晶であり、ポンプ光レーザ2、信号光レーザ3から、それぞれ300Hz以上、代表的には1kHzの繰り返し周波数をもつパルスレーザ光をGaP結晶に照射する。なお、ポンプ光、信号光という名称は差周波混合用光源としての2つのレーザに便宜上与えた名前である。二つのレーザビームは偏光素子4によって平行に近い所定の角度でGaP結晶に入射させる。照射によりGaP結晶に発生する熱をペルチェ温度制御素子5によって放熱するとともに温度を安定化する。ポンプ光レーザは波長1.064μmのYAGレーザであり、繰り返し周波数1kHzとするため高速繰り返し可能な半導体レーザで励起させるYAGレーザを使用する。励起用半導体レーザは大出力が得られ、かつ高速で出力の繰り返しが可能となっている。
FIG. 1 shows a typical example of the configuration of the present invention. The terahertz electromagnetic wave generating crystal 1 is a GaP crystal, and the pump laser 2 and the signal light laser 3 each irradiate the GaP crystal with pulsed laser light having a repetition frequency of 300 Hz or more, typically 1 kHz. The names pump light and signal light are names given for convenience to two lasers serving as a difference frequency mixing light source. The two laser beams are incident on the GaP crystal at a predetermined angle close to parallel by the polarizing element 4. The heat generated in the GaP crystal by irradiation is radiated by the Peltier temperature control element 5 and the temperature is stabilized. The pump light laser is a YAG laser having a wavelength of 1.064 μm, and a YAG laser excited by a semiconductor laser that can be repeated at a high speed is used in order to set the repetition frequency to 1 kHz. The pumping semiconductor laser can obtain a large output and can repeat the output at a high speed .

一方、信号光レーザとして最適なのは1.02μmから1.10μmの範囲で波長可変のYbドープファイバレーザであり、ポンプ光との周波数差が0.3THzから7THzとするためには、1.065μmから1.091μmまで、または1.063μmから1.038μmまで変化させる。YAGレーザと同様Ybドープファイバレーザも1kHzの繰り返し周波数とするために半導体レーザで励起される。波長可変レーザとしてYbドープファイバレーザにkaw替わって半導体レーザ励起 Nd:YLFレーザを使っても良い。この場合、波長可変範囲はおよそ、1.043μmから1.053μmとなる。
On the other hand, the most suitable signal light laser is a Yb-doped fiber laser whose wavelength is variable in the range of 1.02 μm to 1.10 μm. In order to set the frequency difference from the pump light to 0.3 THz to 7 THz, from 1.065 μm Change to 1.091 μm or from 1.063 μm to 1.038 μm. Similar to the YAG laser, the Yb-doped fiber laser is also pumped with a semiconductor laser in order to obtain a repetition frequency of 1 kHz. A semiconductor laser pumped Nd: YLF laser may be used instead of the Yb-doped fiber laser as the wavelength tunable laser . In this case, the wavelength variable range is approximately 1.043 μm to 1.053 μm.

ポンプ光、信号光のビーム径は1mm程度である。差周波混合によって発生するテラヘルツ電磁波のビーム径も結晶の出力端で同程度であるが、放物面鏡6、7によって平行に近いビームとし、高い解像度を得るために、テーパ状金属導波管8によってビーム径を細く絞り、検体9に照射する。検体9は例えば薄く切断されたガン細胞を含む生体組織、あるいはICカードであり、xy可動ステージ10に乗せて、これを順次移動させ、検体を透過したテラヘルツ電磁波を検知器11よって検出する。金属導波管の出射口は0.1mmから0.3mmの細い径を有しており、これにより、検体のガン化した領域の像を300μm程度の解像度で得ることができる。
The beam diameters of pump light and signal light are about 1 mm. The beam diameter of the terahertz electromagnetic wave generated by the difference frequency mixing is about the same at the output end of the crystal, but in order to obtain a high resolution by making the beam nearly parallel by the parabolic mirrors 6 and 7, a tapered metal waveguide The beam diameter is narrowed by 8 to irradiate the specimen 9. The specimen 9 is, for example, a living tissue containing cancer cells that have been cut thinly, or an IC card. The specimen 9 is placed on the xy movable stage 10 and moved sequentially, and terahertz electromagnetic waves that have passed through the specimen are detected by the detector 11. The exit of the metal waveguide has a thin diameter of 0.1 mm to 0.3 mm, so that an image of the cancerous region of the specimen can be obtained with a resolution of about 300 μm.

図1は透過画像を得る構成であるのに対して、反射画像を得るには図2のように検体からの反射光12をビームスプリッタ13を介して取り出し、テーパ状金属導波管14によって検知器15に導く。  1 shows a configuration in which a transmission image is obtained, whereas in order to obtain a reflection image, reflected light 12 from the specimen is extracted through a beam splitter 13 and detected by a tapered metal waveguide 14 as shown in FIG. Guide to vessel 15.

検体の測定領域は代表的には10mm×10mmの大きさを有しており、300μmの解像度で像を得るために、約1,000点のスポットの透過強度又は反射強度を1パルス1点ごとに順次測定する。二つのポンプレーザの繰り返し周波数は1kHzであるので、1点の測定を1パルスで行えば、1秒で1枚の透過像を得ることができる。すなわち検体を設置する時間に比べても充分速い時間で測定できる。1パルスあたり1スポットの測定を可能とするにはテラヘルツ波の強度が充分なS/N比を有していなければならない。  The measurement area of the specimen typically has a size of 10 mm × 10 mm, and in order to obtain an image with a resolution of 300 μm, the transmission intensity or reflection intensity of about 1,000 spots is determined for each pulse. Measure sequentially. Since the repetition frequency of the two pump lasers is 1 kHz, if one point is measured with one pulse, one transmission image can be obtained in one second. That is, it can be measured in a sufficiently fast time compared to the time for installing the specimen. In order to enable measurement of one spot per pulse, the intensity of the terahertz wave must have a sufficient S / N ratio.

検出器としてシリコンボロメータは微弱なテラヘルツ波に対しても高いS/Nを与えるが、液体ヘリウムを必要とするので検査現場での使用に適していない。従って、室温で動作する焦電検知器DTGSを検知器として使う。DTGSはシリコンボロメータに比べて1/1,000の感度であるので1パルスあたり少なくとも最大出力周波数において50mWのテラヘルツ波出力を有する光源を必要とする。  As a detector, a silicon bolometer gives a high S / N even for a weak terahertz wave, but it is not suitable for use at an inspection site because it requires liquid helium. Therefore, the pyroelectric detector DTGS operating at room temperature is used as a detector. Since DTGS has a sensitivity of 1/1000 compared to a silicon bolometer, a light source having a terahertz wave output of 50 mW at least at the maximum output frequency per pulse is required.

また、従来、可変周波数テラヘルツ波発生装置として知られているLiNbOの場合、スペクトル範囲は0.7THzから2.5THzである。多数の異なる物質の同定を行うには従来範囲の測定だけでは、極めて不十分であり、1桁以上の広い周波数範囲、すなわち0.5THzから5THz以上の範囲を測定可能範囲としてカバーすることが望ましい。
なお、ここでは測定可能範囲は最大出力周波数での出力に対しておよそ1%以上の出力を得られる周波数範囲を目安とした。
Further, in the case of LiNbO 3 which is conventionally known as a variable frequency terahertz wave generator, the spectrum range is 0.7 THz to 2.5 THz. The conventional measurement alone is extremely insufficient for identifying many different substances, and it is desirable to cover a wide frequency range of one digit or more, that is, a range of 0.5 THz to 5 THz or more as a measurable range. .
Here, the measurable range is a frequency range in which an output of about 1% or more with respect to the output at the maximum output frequency can be obtained.

GaP結晶から得られるテラヘルツ電磁波強度は、ポンプ光、信号光の出力が、パルスあたり3mJのとき、50mW,から100mWであるので充分な強度である。また測定可能範囲は、最大0.3THzから7THzまで得られる。従って、本発明では、GaP結晶はテラヘルツ電磁波発生用結晶として最も望ましい。GaP結晶の場合、差周波混合はフォノンポラリトンを励起することによって行われ、1.064μm帯では位相整合のため、二つのレーザのビームは、テラヘルツ周波数とともに増大する概ね2度以下の微小な交差角度を持って入射させる必要がある。
The terahertz electromagnetic wave intensity obtained from the GaP crystal is sufficient because the output of pump light and signal light is 50 mW to 100 mW when the output of pump light and signal light is 3 mJ per pulse. The measurable range can be obtained from a maximum of 0.3 THz to 7 THz. Therefore, in the present invention, the GaP crystal is most desirable as a terahertz electromagnetic wave generating crystal. In the case of GaP crystal, difference frequency mixing is performed by exciting phonon polaritons, and in the 1.064 μm band, due to phase matching, the two laser beams have a small crossing angle of approximately 2 degrees or less that increases with the terahertz frequency. It is necessary to make it incident .

差周波発生用結晶複屈折性を有するGaSe結晶を使えば周波数範囲がGaPよりも狭くなるが二つのレーザビームを平行にすることができるのでビーム入射系の構造が簡単になるという利点を有する。DAST(4−dimethylamino−N−methyl−4−stilbazolium tosylate)結晶はGaP結晶に比較して低周波数側での可変範囲が狭いが、平行入射が可能であるという利点がある。  If a GaSe crystal having difference birefringence crystal birefringence is used, the frequency range is narrower than GaP, but two laser beams can be made parallel, so that there is an advantage that the structure of the beam incident system is simplified. A DAST (4-dimethylamino-N-methyl-4-stilbazolium tosylate) crystal has a narrow variable range on the low frequency side as compared with a GaP crystal, but has an advantage that parallel incidence is possible.

上記のようにパルス繰り返し周波数が1kHzであり、1パルスあたりポンプ光と信号光それぞれ3mJ入射すると、GaP結晶に入射する合計平均パワは6Wである。ビーム径1mmから3mmにおいてGaP結晶は局所的に過熱され温度が上昇する。その結果、位相整合条件が変化し、差周波発生効率が低下する。これを避けるため、GaP結晶は図1のように結晶をペルチエ温度制御された放熱マウント5に挟まれて設置されている。熱接触を良好にするため、結晶と放熱マウントの接触面に柔らかい金属1n薄板をはさみ結晶上面から圧力を加えたり、熱伝導の良好なペーストを塗布し、熱接触をよくする。  As described above, when the pulse repetition frequency is 1 kHz and the pump light and the signal light are incident at 3 mJ per pulse, the total average power incident on the GaP crystal is 6 W. When the beam diameter is 1 mm to 3 mm, the GaP crystal is locally heated and the temperature rises. As a result, the phase matching condition changes, and the difference frequency generation efficiency decreases. In order to avoid this, the GaP crystal is installed by sandwiching the crystal between the Peltier temperature-controlled heat dissipating mount 5 as shown in FIG. In order to improve the thermal contact, a soft metal 1n thin plate is sandwiched between the contact surface of the crystal and the heat dissipating mount, pressure is applied from the upper surface of the crystal, or a paste with good heat conduction is applied to improve the thermal contact.

ポンプ光、信号光のパルス繰り返し周波数を1kHzから300Hzに低下させれば、結晶に入射するパワは約2Wにまで低下し、効率低下を軽減できる。画像を得るに必要な時間は、実施例1より3倍の3秒となり、極めて高速の流れ作業による検査では問題となるが、一般の検査では実用的な高速性を保持することができる。
なお、ポンプ光源、信号光源レーザをモードロックすれば100MHz以上の高速繰り返し周波数が得られるが、1パルスあたりの出力エネルギーが小さいので1スポットのデータを同じS/Nで得るために1000パルス以上についての積分を行わなければならない。
If the pulse repetition frequency of pump light and signal light is reduced from 1 kHz to 300 Hz, the power incident on the crystal is reduced to about 2 W, and the reduction in efficiency can be reduced. The time required to obtain an image is 3 seconds, which is three times that of the first embodiment, which is a problem in an inspection by an extremely high-speed flow operation, but can maintain a practical high speed in a general inspection.
If the pump light source and the signal light source laser are mode-locked, a high-speed repetition frequency of 100 MHz or more can be obtained. However, since the output energy per pulse is small, in order to obtain one spot data with the same S / N, about 1000 pulses or more. Must be integrated.

テラヘルツ電磁波発生用結晶からの放熱をさらに良好にし高速性能を高めるために、図3のように結晶に入射するポンプ光、信号光のビーム断面を円筒凸レンズ16,凹レンズ16’によって扁平な楕円ビームにして、厚み300μm程度まで薄くした結晶に入射すれば、放熱板への熱伝導を高めることができる。ビームの断面積が同じであれば、テラヘルツ電磁波の発生効率は同じである。例として径1mm程度の円状断面のビームを、楕円レンズを用いて、300μm×3mmの薄い楕円形状に成形し、差周波発生結晶を300μmの厚みにし、放熱マウントに挟む。発生するテラヘルツ電磁波は出力端で同様な扁平の形状をしているので、ポリエチレンなどのテラヘルツ波の透過度の高い材料で作られた円筒レンズ凸レンズ17,凹レンズ17’によって円状断面にもどしてから1図と同様、金属導波管に入射する。  In order to further improve the heat dissipation from the crystal for generating terahertz electromagnetic waves and enhance the high speed performance, the cross section of the pump light and signal light incident on the crystal is made into a flat elliptical beam by the cylindrical convex lens 16 and the concave lens 16 'as shown in FIG. If the light is incident on a crystal thinned to a thickness of about 300 μm, heat conduction to the heat sink can be enhanced. If the cross-sectional areas of the beams are the same, the generation efficiency of terahertz electromagnetic waves is the same. As an example, a circular cross-section beam having a diameter of about 1 mm is formed into a thin elliptical shape of 300 μm × 3 mm using an elliptical lens, the difference frequency generating crystal is made 300 μm thick, and is sandwiched between heat dissipation mounts. Since the generated terahertz electromagnetic wave has the same flat shape at the output end, the circular cross section is returned to the circular cross section by the cylindrical lens convex lens 17 and the concave lens 17 ′ made of a material having high terahertz wave transmittance such as polyethylene. As in FIG. 1, the light enters the metal waveguide.

透過強度を測定する場合の実施例1の構成を示す図である。  It is a figure which shows the structure of Example 1 in the case of measuring transmission intensity. 反射強度を測定する場合の実施例1の構成を示す図である。  It is a figure which shows the structure of Example 1 in the case of measuring reflection intensity. 実施例2の構成を示す図である。  6 is a diagram illustrating a configuration of Example 2. FIG.

符号の説明Explanation of symbols

1…テラヘルツ電磁波発生用結晶
2…ポンプ光レーザ
3…信号光レーザ
4…偏光子
5…放熱マウント
6,7…非軸放物面鏡
8…金属導波管、金属導波管テーパ部
9…検体
10…ステージ
11…検知器
12…反射テラヘルツ波
13…テラヘルツビームスプリッタ
14…金属導波管
15…検知器
16,16’…近赤外線用円筒型凸レンズ及び凹レンズ
17,17’…テラヘルツ電磁波用凸レンズ及び凹レンズ
DESCRIPTION OF SYMBOLS 1 ... Crystal for terahertz electromagnetic wave generation 2 ... Pump light laser 3 ... Signal light laser 4 ... Polarizer 5 ... Radiation mount 6, 7 ... Non-axial parabolic mirror 8 ... Metal waveguide, metal waveguide taper part 9 ... Specimen 10 ... Stage 11 ... Detector 12 ... Reflected terahertz wave 13 ... Terahertz beam splitter 14 ... Metal waveguide 15 ... Detectors 16, 16 '... Convex convex lens and concave lenses 17, 17' for near infrared rays ... Convex lens for terahertz electromagnetic wave And concave lens

Claims (3)

それぞれ、300Hz以上の繰り返し周波数を有するパルス半導体レーザによって励起される第1及び第2の単一周波数パルスレーザ、前記2つの単一周波数パルスレーザの差周波数を持つテラヘルツ波発生用GaP結晶、前記GaP結晶を効率よく放熱し温度制御する放熱マウント、前記単一周波数パルスレーザからの2つのビームが互いに所定の位相整合角度をもって前記GaP結晶に入射する手段有し、前記2つの単一周波数パルスレーザの少なくとも一つが周波数可変であることにより0.3THzから7THzの範囲の所望の単一周波数コヒーレント光であり、300Hz以上の繰り返し周波数を有するテラヘルツ波を発生するテラヘルツ波発生部
検体を乗せる試料移動ステージ
前記検体に前記テラヘルツ波を導入する金属導波管と
前記検体を透過した前記テラヘルツ波を検出するテラヘルツ波検出器
とを備え、前記テラヘルツ波が前記検体を透過した透過画像を得るテラヘルツ波画像装置。
First and second single frequency pulse lasers pumped by a pulsed semiconductor laser having a repetition frequency of 300 Hz or more, a terahertz wave generating GaP crystal having a difference frequency between the two single frequency pulse lasers , and the GaP A heat dissipating mount for efficiently dissipating the crystal and controlling the temperature ; and means for allowing two beams from the single frequency pulse laser to enter the GaP crystal with a predetermined phase matching angle with each other , and the two single frequency pulse lasers and a desired single frequency coherent light in the range of 7THz from 0.3 THz, the terahertz wave generator for generating a terahertz wave having a repetition frequency of more than 300Hz by at least one is a variable frequency,
A sample moving stage on which a sample is placed ;
A metal waveguide for introducing the terahertz wave into the specimen ;
Terahertz wave detector for detecting the terahertz wave transmitted through the specimen
A terahertz wave imaging device for obtaining a transmission image in which the terahertz wave is transmitted through the specimen.
それぞれ、300Hz以上の繰り返し周波数を有するパルス半導体レーザによって励起される第1及び第2の単一周波数パルスレーザ、前記2つの単一周波数パルスレーザの差周波数を持つテラヘルツ波発生用GaP結晶、前記GaP結晶を効率よく放熱し温度制御する放熱マウント、前記単一周波数パルスレーザからの2つのビームが互いに所定の位相整合角度をもって前記GaP結晶に入射する手段有し、前記2つの単一周波数パルスレーザの少なくとも一つが周波数可変であることにより0.3THzから7THzの範囲の所望の単一周波数コヒーレント光であり、300Hz以上の繰り返し周波数を有するテラヘルツ波を発生するテラヘルツ波発生部
検体を乗せる試料移動ステージ
前記検体から反射した前記テラヘルツ波を検出するテラヘルツ波検出器と、
前記検体から反射した前記テラヘルツ波を前記テラヘルツ波検出器に導入する金属導波管
とを備え、前記テラヘルツ波が前記検体から反射した反射画像を得るテラヘルツ波画像装置。
First and second single frequency pulse lasers pumped by a pulsed semiconductor laser having a repetition frequency of 300 Hz or more, a terahertz wave generating GaP crystal having a difference frequency between the two single frequency pulse lasers , and the GaP A heat dissipating mount for efficiently dissipating the crystal and controlling the temperature ; and means for allowing two beams from the single frequency pulse laser to enter the GaP crystal with a predetermined phase matching angle with each other , and the two single frequency pulse lasers and a desired single frequency coherent light in the range of 7THz from 0.3 THz, the terahertz wave generator for generating a terahertz wave having a repetition frequency of more than 300Hz by at least one is a variable frequency,
A sample moving stage on which a sample is placed ;
A terahertz wave detector for detecting the terahertz wave reflected from the specimen ;
Metal waveguide for introducing the terahertz wave reflected from the specimen into the terahertz wave detector
A terahertz wave imaging device for obtaining a reflected image in which the terahertz wave is reflected from the specimen.
前記2つの単一周波数パルスレーザのビームが、前記GaP結晶内で、それぞれ楕円状断面となるように円筒凸レンズおよび円筒凹レンズが配置されていることを特徴とする請求項1又は2に記載のテラヘルツ波画像装置。 The beam of the two single-frequency pulsed laser, in the GaP crystal, the terahertz according to claim 1 or 2 the cylindrical lens and a cylindrical concave lens such that the elliptical cross-section, respectively, characterized in that it is located Wave imaging device.
JP2003436901A 2003-12-26 2003-12-26 Terahertz wave imaging device Expired - Fee Related JP4209765B2 (en)

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