JP4204458B2 - Inspection method of semiconductor wafer by electron beam apparatus - Google Patents

Description

  The present invention relates to a method for inspecting a semiconductor device using an electron beam apparatus, and more particularly to a method for inspecting a semiconductor wafer.

An electron beam apparatus such as a length measuring SEM is used for dimensional inspection of fine patterns formed on a semiconductor wafer and inspection of holes. In the length measurement SEM, the alignment position and the length measurement position are registered in advance as a template image, and the position is determined by comparing the template image and the actual image during measurement. Also, when acquiring images, focus, brightness, contrast, etc. are automatically adjusted. These are provided with a retry function in the case where the position cannot be specified once or when the automatic adjustment cannot be performed once. Due to this retry function, the current measurement SEM cannot predict the end time of the inspection.
JP 2003-44114 A

  In the length measurement SEM, the measurement conditions vary depending on the lot, and the measurement time differs. When a lot is put into the length measuring SEM, the end time is not known, so the user of the apparatus cannot leave the apparatus, and the work efficiency is reduced. Also, in semiconductor factories that have introduced multiple length measurement SEMs, the end time of the last lot in each length measurement SEM is unknown, so the lots cannot be efficiently distributed to the length measurement SEM, reducing production efficiency. ing. Conventionally, since the same lot was inspected in large quantities, the apparatus user could grasp the measurement time from experience. However, in recent semiconductor products, the wafer diameter has become larger and chips can be produced in larger quantities than a single wafer, so the production of the same lot has decreased. In addition, the shift to multi-product small-quantity production has reduced the number of inspections for the same lot, and it has become impossible for the user to grasp the measurement time from experience.

  In view of the present situation of semiconductor wafer inspection, an object of the present invention is to provide a method for calculating an expected processing time by an electron beam apparatus such as a length measuring SEM and displaying the calculated processing time in an easy-to-understand manner for an apparatus user. .

  In order to achieve the above object, the present invention enables measurement time calculation processing in a length measurement SEM.

  That is, the present invention provides a step of taking out a semiconductor wafer to be inspected from a cassette containing a plurality of semiconductor wafers and transporting the semiconductor wafer onto a stage of an electron beam apparatus, and scanning and irradiating an electron beam focused on the semiconductor wafer. Detecting a secondary electron emitted from the sample, acquiring a sample image, changing a focusing point of the electron beam to perform focusing, and pre-registered images of the focused sample image by pattern recognition A step of searching, a step of moving the stage to the measurement position, a step of performing focusing by setting the magnification of the electron beam to an intermediate magnification, and a pre-registered image in a pattern of a sample image focused by the intermediate magnification Search by recognition and focus by setting the magnification of the electron beam device to a high magnification A step of searching a pre-registered image by pattern recognition in a sample image focused at a high magnification, a step of storing an image of an inspection location, and a semiconductor wafer that has been inspected is transferred from the stage to a cassette. A semiconductor wafer inspection method using an electron beam apparatus including a step, a focus adjustment calculated based on a semiconductor wafer transfer time, a stage movement time, and a preset minimum and maximum number of retries. The shortest expected processing time and the longest expected processing time are calculated by adding the time and the time including the pattern recognition time calculated based on the preset minimum and maximum number of pattern recognition peripheral searches. And the shortest expected test end time and longest time calculated based on the shortest expected processing time and the longest expected processing time. It is intended to display the inspection scheduled end time.

  The estimated processing time remaining may be obtained by setting the completed processing time to 0, and the expected inspection end time obtained by adding the expected processing time to the current time may be displayed. Along with the shortest scheduled test end time and the longest scheduled test end time, an intermediate scheduled test end time obtained by averaging them may be displayed simultaneously. Alternatively, the scheduled inspection end time calculated using past performance values may be displayed simultaneously as the focus retry count and the pattern recognition peripheral search count. It is also useful to perform inspection in parallel using a plurality of electron beam devices and display the scheduled end time of inspection by each electron beam device.

  According to the present invention, when a lot is put into the length measuring SEM, the scheduled end time is known, and the apparatus user can perform other work up to near the scheduled end time, thereby improving work efficiency.

  Hereinafter, embodiments of the present invention will be described with reference to the drawings. FIG. 1 is a schematic view showing the apparatus configuration of the present invention taking a length measurement SEM as an example. In the length measuring SEM, the electron beam 2 emitted from the electron gun 1 is focused by the electron lens 3 and scanned on the wafer 5 by the deflector 4. Reflected electrons, secondary electrons, and the like emitted from the wafer 5 are detected by the detector 6 and an image is obtained by the image processor 7. The computer 9 displays the obtained image. An optical microscope 10 is also provided, and an optical microscope image can also be obtained by the image processor 7. The computer 9 is equipped with a medium such as a hard disk for storing data.

  FIG. 2 shows an inspection process flow for one lot in the length measuring SEM. In the inspection, an alignment process (202) is performed after the wafer load process (201). The alignment process is a process of detecting the alignment mark on the wafer and correcting the coordinates, and detects at least two alignment marks. It is determined whether the last alignment has been performed (203), and if it is the last, the measurement position movement (204) is performed. At the measurement position, intermediate magnification processing (205), high magnification processing (206), and image storage (207) are sequentially performed. After the image is stored, it is determined whether it is the last measurement position (208). If it is not the last, the process returns to step 204 to move to the next measurement position. If it is the last, a wafer unload (209) is performed, and the wafer is returned to the original position of the cassette. It is determined whether the unloaded wafer is the final wafer (210). If there is a next inspection wafer, the process returns to step 201 again to perform wafer loading processing.

  Next, the wafer loading process (201) will be described. The wafer loading process is a process for transporting the wafer 5 from the cassette 12 (see FIG. 1) to the stage 21, and FIG. 3 shows the processing procedure.

  Prior to the start of the inspection process, the wafer 5 is stored in the cassette 12 on the cassette port 11. When the processing is started, the wafer transfer machine 13 takes out the wafer 5 from the cassette 12 (301). The wafer transfer machine 13 transfers the taken wafer 5 to the aligner 14 (302). The aligner 14 determines the loading direction of the wafer 5 (303). After determining the wafer loading direction, the wafer transfer machine 13 takes out the wafer 5 from the aligner 14 and transfers the wafer 5 to the wafer holder 16 in the load lock chamber 15 (304). When the valve 17 of the load lock chamber 15 is closed (305), the inside of the load lock chamber 15 is evacuated by the vacuum pump 18 (306), and when completed, the valve 19 is opened (307) and is placed on the wafer holder 16. The wafer 5 is loaded on the stage 21 in the processing chamber 20 (308).

  Immediately after loading, the stage 21 is loaded at a position where the lower left of the wafer is observed with the orientation flat or notch down. During processing, the stage 21 moves directly below the electron gun 2 and directly below the optical microscope 10 so that the entire surface of the wafer 5 can be observed.

  Next, the alignment process (202) will be described. A processing flow of the alignment processing is shown in FIG.

  In the alignment process, the stage 21 is first moved to the alignment position (401). In the first alignment process, since the wafer is just loaded, the stage 21 is in a position where the lower left of the wafer is observed, and moves from there. After the second point, the stage is moved from the previous alignment position because it is at the previous alignment position.

  After the alignment position is moved, an image to be aligned is determined (402). The types of images to be aligned include an electron microscope image (SEM image) and an optical microscope image (OM image), and which one is used is determined in advance. In the case of an OM image, brightness adjustment is performed (403). The brightness adjustment is a process for setting the illuminance of the optical microscope to a value registered in advance. In the case of the SEM image, first, the Z sensor is set (404). The Z sensor is set for the distance between the electron gun 1 and the wafer 5, and a value registered in advance is set.

  Next, auto focus (405) is performed on the SEM image. Autofocus is a process for adjusting the reflected electrons and secondary electrons detected by the detector 6 so that the focal point becomes the wafer surface when the electron beam 2 is focused by the electron lens 3. This is done by moving the focusing point up and down. FIG. 5 shows a processing flow of autofocus. Focus adjustment (501) is performed, and it is determined whether or not the peak is present in the adjusted focus (502). If it is optimal, the process is terminated. If it is not optimal, it is determined whether the focus adjustment is saturated (503). If it is not saturated, the adjustment position is changed and focus adjustment (501) is performed again. If it is saturated, the process is terminated.

  Returning to FIG. 4, pattern recognition (406) is performed after brightness adjustment (403) when the alignment processing image is an OM image, and after autofocus (405) when the image is an SEM image. A processing flow of pattern recognition (406) is shown in FIG. In pattern recognition, pattern matching (601) is first performed. Pattern matching is to compare the model image acquired in advance with the captured image to check the degree of coincidence of the image. Are not matched (602). If they match, the process ends. If they do not match, the process moves to another position (604), and a peripheral search is performed. The maximum number of times of the peripheral search is determined, and the processing is continued until the maximum number is reached.

  When the alignment process is completed, the position is moved to the length measurement position (204), and the intermediate magnification process (205) is performed. The position movement will be described here. As shown in FIG. 9A, the position of the stage is moved by moving the stage 21 using independent pulse motor X901 and pulse motor Y902. The pulse motor is controlled by trapezoidal control as shown in FIG. 9B, where the vertical axis represents speed and the horizontal axis represents time.

  FIG. 7 shows a processing flow of the intermediate magnification processing (205). The intermediate magnification processing 205 is performed in the order of the Z sensor (701), Pre Dose (702), autofocus (703), and pattern recognition (704). The Z sensor, autofocus, and pattern recognition are the same processes as the autofocus (405), Z sensor (404), and pattern recognition (406) described in the alignment process (202). Pre Dose is a process of irradiating the electron beam 2 for a specified time in order to stabilize the contrast of the image.

  Next, the high-magnification process (206) will be described. The processing flow is shown in FIG. High-magnification processing (206) is performed in the order of autofocus (801), pattern recognition (802), and length measurement (803). The auto focus (801) and pattern recognition (802) are the same processes as the auto focus (405) and pattern recognition (406) as in the case of the intermediate magnification process 205. Length measurement (803) is a process for measuring the width and shape of a pattern in accordance with a length measurement condition registered in advance in a captured image.

  The image storage 207 is a process for storing the captured image used at the time of length measurement in the hard disk of the computer 9.

  When the processing is completed, wafer unloading (209) is performed. The wafer unload processing flow is shown in FIG. The valve 19 is opened (1001), and the wafer 5 placed on the wafer holder 16 moves to the load lock chamber 15 (1002). When the valve 19 is closed (1003), the valve 17 is opened (1004), and the wafer transfer device 13 takes out the wafer 5 and transfers it to the original position of the cassette 12 (1005).

Expected processing time T _EST length measuring SEM which is an embodiment of the present invention, from the examination process flow of one lot of CD-SEM shown in FIG. 2, can be obtained by Equation 1 below.
[Formula 1]
T _EST = (WLT + ALT × AP + (MVT + MPT + MST + IST) × MP + WUT) × W
Here, WLT: Wafer loading time, ALT: Alignment processing time, AP: Number of alignment points, MVT: Measuring position moving time, MPT: Intermediate magnification processing time, MST: High magnification processing time, IST: Image storage time, MP: Measurement Number of points, WUT: Wafer unload time, W: Number of wafers. AP (number of alignment points), MP (number of measurement points), and W (number of wafers) are always defined when registering inspection conditions. Below, the calculation method of each processing time in Formula 1 is shown.

The WLT (wafer load time) can be calculated by Equation 2 from FIG.
[Formula 2]
WLT = CWMT + AWMT + AWT + LWMT + VCT1 + VT + VCT2 + SWMT
Here, CWMT: Wafer removal time from cassette, AWMT: Wafer transfer time to aligner, AWT: Wafer loading direction detection time, LWMT: Wafer transfer time to load lock chamber, VCT1: Valve closing time, VT: Vacuum exhaust Time, VCT2: Valve opening time, SWMT: Wafer transfer time to processing chamber.

  CWMT (wafer removal time from the cassette) varies depending on the wafer storage position of the cassette to be taken out, but is constant for each wafer storage position. Therefore, if the wafer storage position is n, it can be fixed as CWMT (n). AWMT (wafer transfer time to the aligner) varies in the vertical movement distance depending on the wafer storage position, but is included in the movement time in the plane direction, so there is no difference in processing time depending on the wafer storage position. Since the movement time in the planar direction is determined by the position of the cassette port 11, if the position of the cassette port 11 is p, it can be fixed as AWMT (p). In AWT (wafer carry-in direction detection time), the aligner 14 rotates the wafer to detect the carry-in direction. The processing time varies depending on the direction of the wafer when it is transferred to the aligner. However, if the rotation speed of the wafer at the aligner 14 is 1 second / time or more, the average error is 0.5 seconds or less, and there is no problem in calculating the expected processing time. Therefore, AWT (wafer carry-in direction detection time) can be defined in advance as a fixed value before processing. LWMT (wafer transfer time to load lock chamber), VCT1 (valve closing time), VT (evacuation time), VCT2 (valve open time), SWMT (wafer transfer time to processing chamber) all have constant processing time Therefore, it can be defined in advance as a fixed value before processing.

Processing Flow of Alignment Processing From FIG. 4, ALT (alignment processing time) can be obtained by Equation 3 and Equation 4. Although the processing time differs depending on whether the alignment image is an SEM image or an OM image, it can be determined before measurement. However, the processing time of the pattern recognition processing in each of the SEM image autofocus processing, SEM image, and OM image is indefinite until the processing is actually executed.
[Formula 3] SEM image processing time
ALT = ALMVT + ZT + AFT + PT
[Formula 4] OM image processing time
ALT = ALMVT + ABCT + PT
Here, ALMVT: alignment position moving time, ZT: Z sensor processing time, AFT: autofocus time, ABCT: brightness adjustment time, PT: pattern recognition time.

Processing Flow of Autofocus Processing From FIG. 5, the processing time AFT of autofocus processing can be obtained by Equation 5.
[Formula 5]
AFT = FT × (RFN + 1)
Here, FT: focus adjustment time, RFN: focus retry count. RFN (focus retry count) is a parameter that becomes indefinite until the process is actually executed. The minimum value of RFN (focus retry count) is 0, and the maximum value is determined by the focus adjustment range and focus initial value, but is almost constant. Therefore, when RFNMAX is set, the minimum time of AFT (autofocus processing time) AFTMIN, The maximum time AFTMAX can be obtained by the following equations 6 and 7.
[Formula 6]
AFTMIN = FT
[Formula 7]
AFTMAX = FT × (RFNMAX + 1)
By using the autofocus processing time minimum value AFTMIN and the maximum value AFTMAX, the autofocus processing time that has been indefinite until the processing is actually executed can be obtained. In addition to the minimum value and the maximum value, an intermediate value may be used. Further, each time autofocus is executed in the apparatus, the number of focus retries is saved and accumulated in the hard disk of the computer 9 and saved. The processing time can also be obtained by using an average value or a maximum frequency value of the focus retry counts accumulated and stored.

From the processing flow diagram of the pattern recognition processing, the pattern recognition processing is the same for both the SEM image and the OM image, and the pattern recognition processing time PT can be obtained by Expression 8.
[Formula 8]
PT = PMT × (RPN + 1) + PMV × RPN
Here, PMT: pattern verification time, RPN: number of pattern recognition movements, PMV: pattern recognition movement time. Similar to autofocus, in pattern recognition, the number of movements and RPN (number of pattern recognition movements) are parameters that are indefinite until processing is actually executed. The minimum value of RPN (number of pattern recognition movements) is 0, and the maximum value is determined by the search area and is constant. When the maximum value is RPNMAX, the minimum time PTMIN and the maximum time PTMAX of PT (pattern recognition processing time) can be obtained by the following equations 9 and 10.
[Formula 9]
PTMIN = PMT
[Formula 10]
PTMAX = PMT × (RPNMAX + 1) + PMV × RPNMAX

  By using the minimum value and the maximum value of the pattern recognition processing time, the pattern recognition processing time that has been indefinite until the processing is actually executed can be obtained. In addition to the minimum value and the maximum value, an intermediate value may be used. Further, the pattern recognition movement count is accumulated and stored in the hard disk of the computer 9 each time pattern recognition is executed in the apparatus, as in autofocus. Then, the processing time can also be obtained using the average value or the maximum frequency value of the number of pattern recognition movements accumulated and stored.

The measurement position moving time MVT can be obtained from Equation 11 when the moving distance is l from FIG. 9B.
[Formula 11]
MVT = l / v1 + (t1 + t2) / 2
However, in Expression 11, MVT (measurement position moving time) needs to be larger than (t1 + t2). Therefore, Expression 11 is a case where the moving distance l is v1 × (t1 + t2) / 2 or more. When the moving distance l is smaller than v1 × (t1 + t2) / 2, it is not a trapezoidal control but a triangular control. Therefore, when the maximum speed is vm, it can be expressed by Expression 12.
[Formula 12]
MVT = 2 × l / vm
Here, since t1, t2, and v1 are fixed, when vm is expressed using t1, t2, and v1, Expression 13 is obtained.
[Formula 13])
MVT = {(2 ・ v1 ・ l) / (t1 + t2)} ^1/2

Processing Flow of Intermediate Double Processing From FIG. 7, the intermediate double processing time MPT can be obtained by Expression 14. As with the alignment process, there are an autofocus process and a pattern recognition process as well as the alignment process. The intermediate process time is indefinite until the process is actually executed. .
[Formula 14]
MPT = ZT + PDT + AFT + PT
Here, ZT: Z sensor processing time, PDT: Pre Dose processing time, AFT: Autofocus time, PT: Pattern recognition time.

Processing flow of high-magnification processing FIG. The high-magnification processing time MST also includes auto-focus processing and pattern recognition processing as in the alignment processing and intermediate-fold processing, and these are indefinite until the processing is actually executed. Can be sought.
[Formula 15]
MST = AFT + PT + MEST
Here, AFT: autofocus time, PT: pattern recognition time, MEST: length measurement processing time.

The image storage processing time IST can be defined by Expression 16.
[Formula 16]
IST = TIT × IMGSZ + HDT × IMGSZ
Here, TIT: an image transfer speed from the image processor 7 to the computer 9, IMGSZ: an image size, and a hard disk writing speed of the computer 9. The image transfer speed from the image processor 7 to the computer 9 and the hard disk writing speed of the computer 9 vary depending on the execution state depending on the transfer load and CPU load, but by using the estimated value from the theoretical value and the average value of the actually measured value, Processing time can be calculated.

  As described above, the estimated processing time can be calculated, but there are cases where the processing is performed in parallel. For example, the image storage process can be performed in parallel with the next measurement position movement process or wafer unload process. Since it can be recognized that parallel operation is performed before execution, the parallel operation portion is omitted from the calculation of the expected processing time.

Since the expected processing time of the length measurement SEM can be calculated, the following processing time can be calculated.
-Expected processing time before the start of measurement The processing time of processing for one lot can be calculated by using Equation 1 before starting the measurement.
• Expected processing time during measurement condition registration During processing condition registration, each processing time in Equation 1 changes each time the condition is changed. The changing expected processing time is calculated in real time.
-Expected processing time for one wafer The processing time for processing one wafer can be calculated by setting W (the number of wafers) to 1 in Equation 1.
-Remaining processing time during measurement The remaining processing time during measurement can be calculated by setting the processing time when the processing is completed to 0 in the equations 1 to 16.
Expected processing time between arbitrary processes The expected processing time between arbitrary processes can be calculated as the total processing time performed between arbitrary processes. For example, the processing time from intermediate magnification processing to image storage in FIG. 2 is (MPT + MST + IST).

  By calculating the expected processing time of the length measurement SEM, it is possible to indicate the processing end order in a plurality of apparatuses.

  FIG. 11A shows the operation status of the length measuring SEM in the semiconductor factory. In FIG. 11 (a), four length measuring SEMs are in operation, lot A1 and lot A2 are inserted in the length measuring SEM1, lot B1 in the length measuring SEM2, lot C1 in the length measuring SEM3, The lot D1, the lot C3, and the length measurement SEM4 are shown in a state where the lot D1 and the lot D2 are input. In this state, the expected processing time can be calculated by the method described above, and each lot end scheduled time can be displayed as shown in FIG. The scheduled end time of each lot can be displayed as the shortest, reference, or longest. The shortest scheduled end time is the time calculated by replacing the indefinite time with the minimum value, and the longest scheduled end time is the time calculated by replacing the indefinite time with the maximum value. The reference time is a time calculated by replacing the indefinite time with an average value obtained from past results.

  Further, the processing end order as shown in FIG. 12 and the scheduled final lot end time in each device can be displayed on each device. The scheduled end time is displayed as a reference value as shown in FIG. 12 (a), displayed as the longest time as shown in FIG. 12 (b), or displayed as the shortest time as shown in FIG. 12 (c). can do. This display may be displayed on each device, or may be displayed on a general control device connected to each device via a LAN or the like.

  The end processing time can be known from the remaining processing time during measurement, and the end processing time can be calculated and displayed in real time as the processing proceeds. Display examples are shown in FIGS. 13A, 13B, and 13C. FIG. 13A shows a display at the time when one lot processing has advanced by about 1/4, FIG. 13B shows a display by about 1/2, and FIG. 13C shows a display at a time by which 3/4 has advanced. FIG. 13D is a graph showing the transition of the end time with respect to the process. As the remaining processing time (end processing time) progresses, the indeterminate portion decreases, and the shift between the shortest, reference, and longest scheduled end times decreases.

  According to the present invention, when a lot is put into the length measuring SEM, the scheduled end time is known, and the user can perform other work up to the close scheduled end time, so that the work efficiency can be improved. Further, in a semiconductor factory where an automatic lot transfer system is introduced, by sending an automatic transfer robot to the length measuring SEM at the scheduled end time, the lot replacement time can be shortened, and the production efficiency is improved. Furthermore, in semiconductor factories that have introduced multiple length measuring SEMs, the end time of the last lot in each length measuring SEM is known, so that the lots can be efficiently distributed to the length measuring SEMs and waiting for lot measurement. Time can be leveled. Usually, since the apparatus usage rate is not 100%, the average measurement waiting time of the lot is shortened, and the production efficiency is improved. It is also possible to reduce the measurement waiting time for the emergency lot. In addition, by knowing the scheduled end time of the lot, it is possible to know the lot entry time and order for the next process, reduce the waiting time for processing in the next process, and improve the production efficiency of the entire semiconductor factory. it can.

It is the schematic which shows the apparatus structure of this invention which took length measurement SEM as an example. It is a flowchart of the inspection process of 1 lot in length measurement SEM. It is a flowchart of the wafer load process in length measurement SEM. It is a flowchart of the alignment process in length measurement SEM. It is a flowchart of the autofocus process in length measurement SEM. It is a flowchart of the pattern recognition process in length measurement SEM. It is a flowchart of the process of the intermediate magnification in length measurement SEM. It is a flowchart of the high magnification process in the length measurement SEM. It is the graph which shows the speed change with respect to time of the schematic of the stage in length measurement SEM, and stage control. It is a flowchart of the wafer unload process in length measurement SEM. It is a figure which shows the operating condition of length measurement SEM in a semiconductor factory. It is a schematic diagram which displays an apparatus processing order and the last lot end estimated time. It is a schematic diagram which displays end processing time in real time.

Explanation of symbols

  DESCRIPTION OF SYMBOLS 1 ... Electron gun, 2 ... Electron beam, 3 ... Electron lens, 4 ... Deflector, 5 ... Wafer, 6 ... Detector, 7 ... Image processor, 9 ... Computer, 10 ... Optical microscope, 11 ... Cassette port, DESCRIPTION OF SYMBOLS 12 ... Cassette, 13 ... Wafer transfer machine, 14 ... Aligner, 15 ... Load lock chamber, 16 ... Wafer holder, 17 ... Valve, 18 ... Vacuum pump, 19 ... Valve, 20 ... Processing chamber, 21 ... Stage

Claims (5)

Taking out a semiconductor wafer to be inspected from a cassette containing a plurality of semiconductor wafers and transporting it on a stage of an electron beam apparatus;
Scanning and irradiating the focused electron beam on the semiconductor wafer, detecting secondary electrons emitted from the semiconductor wafer, and obtaining a sample image;
Performing focusing by changing a focusing point of the electron beam;
Searching for a pre-registered image by pattern recognition in the focused sample image;
Moving the stage to a length measurement position;
Performing focusing by setting the magnification of the electron beam to an intermediate magnification; and
In a sample image focused at an intermediate magnification, searching for a pre-registered image by pattern recognition;
Performing focusing by setting the magnification of the electron beam apparatus to a high magnification;
In the sample image focused at high magnification, searching for a pre-registered image by pattern recognition;
Saving an image of the inspection location;
A method of inspecting a semiconductor wafer by an electron beam apparatus including a step of transporting a semiconductor wafer having been inspected from the stage to the cassette,
The transport time of the semiconductor wafer, the movement time of the stage, the focusing time calculated based on the preset minimum and maximum number of retries, and a preset pattern recognition peripheral search Adding the time including the pattern recognition time calculated based on the minimum value and the maximum value of the number of times to obtain the shortest expected processing time and the longest expected processing time;
A method for inspecting a semiconductor wafer, comprising: displaying a shortest expected test end time and a longest expected test end time calculated based on the shortest expected processing time and the longest expected processing time.   2. The method for inspecting a semiconductor wafer according to claim 1, wherein the shortest inspection time calculated by adding the expected processing time to the current time after obtaining the shortest expected processing time and the longest expected processing time by setting the completed processing time to zero. A method for inspecting a semiconductor wafer, characterized in that the scheduled time and the longest scheduled inspection end time are displayed.   3. The semiconductor wafer inspection method according to claim 1, wherein an intermediate test end scheduled time obtained as an average of the shortest test end scheduled time and the longest scheduled test end time is simultaneously displayed. Inspection method.   3. The semiconductor wafer inspection method according to claim 1, wherein an intermediate inspection end scheduled time calculated by using past actual values is simultaneously displayed as the number of retry times of focusing and the number of peripheral search times of pattern recognition. A semiconductor wafer inspection method.   The method for inspecting a semiconductor wafer according to claim 1, wherein inspection is performed in parallel using a plurality of electron beam devices, and a scheduled end time of inspection by each electron beam device is displayed. Semiconductor wafer inspection method.

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