JP4200271B2 - Method for producing fine particles - Google Patents
Method for producing fine particles Download PDFInfo
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- JP4200271B2 JP4200271B2 JP2002181907A JP2002181907A JP4200271B2 JP 4200271 B2 JP4200271 B2 JP 4200271B2 JP 2002181907 A JP2002181907 A JP 2002181907A JP 2002181907 A JP2002181907 A JP 2002181907A JP 4200271 B2 JP4200271 B2 JP 4200271B2
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- Japan
- Prior art keywords
- fine particles
- substrate
- producing fine
- silicon
- particle size
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- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Description
【０００１】
【発明の属する技術分野】
本発明は、紫外線励起により発光を示す微粒子の製造方法である。
【０００２】
【従来の技術及び発明が解決しようとする課題】
現在電子機器の表示装置としては、ブラウン管、液晶、プラズマまたは発光ダイオードなどが使用されている。これらは複雑で高価なため、より安価な表示装置が必要とされている。このためには、シリコンなど安価な素材を用いた発光材料の開発が不可欠である。一方、シリコンは微粒子にしないと発光を示さないという特性がある。
【０００３】
従来、発光を示す結晶化した微粒子作製のためには、溶液からの析出あるいは化学蒸着法を用いる必要があった。
【０００４】
これらいずれの工程でも、結晶化のためには微粒子の熱処理が必要であった。さらに、発光を示す粒子は粒径数ｎｍ以下のものであり、その粒径が波長に関係があるため、発光波長を選ぶためには粒径分布が狭い微粒子が必要で、そのために粒子の分級が必要であった。熱処理、分級はどちらも製造コストを押し上げる要因であった。
【０００５】
本発明は、電子機器の表示装置に安価な発光材料が求められていることに着目し、熱処理や分級無しに発光する微粒子を作製することが技術的課題である。
【０００６】
【課題を解決するための手段】
添付図面を参照して本発明の要旨を説明する。
【０００７】
パルスイオンビームをターゲットに照射して発生した１０１８ｃｍ−３以上の高密度プラズマを、ガスと−１０℃以下の基板で冷却することで２０ｎｍ以下の粒径を有する発光を示す結晶化した微粒子を製造することを特徴とする微粒子の製造方法に係るものである。
【０００８】
また、前記ターゲットと前記基板がシリコンから成ることを特徴とする請求項１記載の微粒子の製造方法に係るものである。
【０００９】
【発明の実施の形態】
好適と考える本発明の実施の形態（発明をどのように実施するか）を、図面に基づいてその作用効果を示して簡単に説明する。
【００１０】
例えば、イオンビームを、シリコンなどのターゲットに照射し、発生した高密度のプラズマを、ガス中または冷却した基板上で急冷することにより微粒子が作製される。
【００１１】
【実施例】
本発明の具体的な実施例について図面に基づいて説明する。
【００１２】
図１に示すように、室温に保持した真空チャンバー１中に、３Ｔｏｒｒのヘリウムガス２を充填し，基板ホルダー３上に単結晶シリコン基板４を設置した。この基板ホルダー３には液体窒素５を導入し、マイナス１０℃（以下）に冷却した。真空チャンバー１には単結晶シリコンターゲット６を設置し、これに水素イオンビーム７を照射することにより密度１０18/ｃｍ3の高密度プラズマ８が発生した。この高密度プラズマをヘリウムガス２と基板で急冷し、微粒子９を基板４上に堆積させた。
【００１３】
図２に堆積した微粒子の粉末Ｘ線回折図形を示す。ピークの位置は、シリコンのそれの位置と一致した。このことから基板４上に結晶化したシリコン微粒子が堆積したことがわかった。
【００１４】
図３に微粒子の粒径分布を示す。プラズマの急冷により、粒径分布の狭い微粒子が作製できたことがわかった。
【００１５】
図４に微粒子に紫外線を照射したときの発光スペクトルを示す。可視光で発光を示していることがわかった。
【００１６】
尚、本発明は、本実施例に限られるものではなく、各構成要件の具体的構成は適宜設計し得るものである。
【００１７】
【発明の効果】
本発明は上述のようにするから、エネルギー変換効率の高いパルスイオンビームを用いて高密度プラズマを発生させることで、粒径が２０ｎｍ以下の発光を示す結晶化した微粒子を熱処理や分級無しに大量に作製することが可能となり、低コストで発光微粒子を作製できることとなる。
【００１８】
また、請求項２記載の発明によれば、よりコストの安いシリコンの使用を可能にし、発光微粒子を安価に作製できることとなる。
【図面の簡単な説明】
【図１】 本実施例における微粒子作製装置の概略構成説明図である。
【図２】 本実施例における微粒子の粉末Ｘ線回折図形である。
【図３】 本実施例における微粒子の粒径分布である。
【図４】 本実施例における微粒子からの、紫外線照射下での発光スペクトルである。[0001]
BACKGROUND OF THE INVENTION
The present invention is a method for producing fine particles of a light emitting by ultraviolet excitation.
[0002]
[Prior art and problems to be solved by the invention]
Currently, cathode ray tubes, liquid crystals, plasma, light emitting diodes, and the like are used as display devices for electronic devices. Since these are complicated and expensive, a cheaper display device is required. For this purpose, development of a light emitting material using an inexpensive material such as silicon is indispensable. On the other hand, silicon has the property of not emitting light unless it is made into fine particles.
[0003]
Conventionally, in order to produce crystallized fine particles exhibiting light emission, it was necessary to use precipitation from a solution or chemical vapor deposition.
[0004]
In any of these steps, heat treatment of fine particles was necessary for crystallization. Furthermore, since particles that emit light have a particle size of several nanometers or less, and the particle size is related to the wavelength, fine particles with a narrow particle size distribution are required to select the light emission wavelength. Was necessary. Both heat treatment and classification were factors that increased manufacturing costs.
[0005]
The present invention pays attention to the need for an inexpensive light-emitting material for a display device of an electronic device, and it is a technical problem to produce fine particles that emit light without heat treatment or classification.
[0006]
[Means for Solving the Problems]
The gist of the present invention will be described with reference to the accompanying drawings.
[0007]
Crystallized fine particles which emit light having a particle size of 20 nm or less by cooling a high-density plasma of 10 18 cm −3 or more generated by irradiating a target with a pulsed ion beam with a gas and a substrate of −10 ° C. or less. In particular, the present invention relates to a method for producing fine particles.
[0008]
2. The fine particle manufacturing method according to claim 1, wherein the target and the substrate are made of silicon.
[0009]
DETAILED DESCRIPTION OF THE INVENTION
An embodiment of the present invention (how to carry out the invention) considered to be suitable will be briefly described with reference to the drawings, showing its effects.
[0010]
For example, fine particles are produced by irradiating a target such as silicon with an ion beam and quenching the generated high-density plasma in a gas or on a cooled substrate.
[0011]
【Example】
Specific embodiments of the present invention will be described with reference to the drawings.
[0012]
As shown in FIG. 1, 3 Torr of helium gas 2 was filled in a vacuum chamber 1 kept at room temperature, and a single crystal silicon substrate 4 was placed on a substrate holder 3. Liquid nitrogen 5 was introduced into the substrate holder 3 and cooled to minus 10 ° C. (below) . A single crystal silicon target 6 was placed in the vacuum chamber 1 and irradiated with a hydrogen ion beam 7 to generate a high density plasma 8 having a density of 10 18 / cm 3 . This high-density plasma was quenched with helium gas 2 and the substrate, and fine particles 9 were deposited on the substrate 4.
[0013]
FIG. 2 shows a powder X-ray diffraction pattern of the deposited fine particles. The position of the peak coincided with that of silicon. From this, it was found that crystallized silicon fine particles were deposited on the substrate 4.
[0014]
FIG. 3 shows the particle size distribution of the fine particles. It was found that fine particles with a narrow particle size distribution could be produced by rapid cooling of the plasma.
[0015]
FIG. 4 shows an emission spectrum when the fine particles are irradiated with ultraviolet rays. It was found that light was emitted with visible light.
[0016]
Note that the present invention is not limited to this embodiment, and the specific configuration of each component can be designed as appropriate.
[0017]
【The invention's effect】
Since the present invention is as described above, high-density plasma is generated using a pulsed ion beam with high energy conversion efficiency, so that a large amount of crystallized fine particles exhibiting light emission having a particle size of 20 nm or less can be obtained without heat treatment or classification. Thus, it is possible to produce luminescent fine particles at low cost.
[0018]
Further, according to the invention described in claim 2, it is possible to use silicon with lower cost, and it is possible to produce the light emitting fine particles at low cost.
[Brief description of the drawings]
FIG. 1 is an explanatory diagram of a schematic configuration of a fine particle production apparatus according to an embodiment of the present invention.
FIG. 2 is a powder X-ray diffraction pattern of fine particles in this example.
FIG. 3 is a particle size distribution of fine particles in this example.
FIG. 4 is an emission spectrum from fine particles in this example under ultraviolet irradiation.
Claims (2)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2002181907A JP4200271B2 (en) | 2002-06-21 | 2002-06-21 | Method for producing fine particles |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2002181907A JP4200271B2 (en) | 2002-06-21 | 2002-06-21 | Method for producing fine particles |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2004024953A JP2004024953A (en) | 2004-01-29 |
| JP4200271B2 true JP4200271B2 (en) | 2008-12-24 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2002181907A Expired - Fee Related JP4200271B2 (en) | 2002-06-21 | 2002-06-21 | Method for producing fine particles |
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| Country | Link |
|---|---|
| JP (1) | JP4200271B2 (en) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4721340B2 (en) * | 2005-11-16 | 2011-07-13 | 国立大学法人名古屋大学 | Method for producing fluorescent silicon particles, fluorescent silicon particles and method for observing biological material using the same |
| US20120234705A1 (en) | 2009-09-24 | 2012-09-20 | Zipwall, Llc | Partition mounting systems, partition assembly kits, double-sided adhesive tape and methods of installation and application |
| CN102741493B (en) | 2009-09-24 | 2016-05-18 | 拉链墙有限责任公司 | Partition mounting system, partition assembly kit, double sided tape and how to install and use |
| USD1036703S1 (en) | 2021-11-17 | 2024-07-23 | Zipwall, Llc | Door panel with window |
-
2002
- 2002-06-21 JP JP2002181907A patent/JP4200271B2/en not_active Expired - Fee Related
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| Publication number | Publication date |
|---|---|
| JP2004024953A (en) | 2004-01-29 |
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