JP4198584B2 - Aluminum foil for electrolytic capacitor and manufacturing method thereof - Google Patents
Aluminum foil for electrolytic capacitor and manufacturing method thereof Download PDFInfo
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- 239000011888 foil Substances 0.000 title claims description 35
- 229910052782 aluminium Inorganic materials 0.000 title claims description 34
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 title claims description 34
- 239000003990 capacitor Substances 0.000 title claims description 23
- 238000004519 manufacturing process Methods 0.000 title claims description 7
- 229910052761 rare earth metal Inorganic materials 0.000 claims description 13
- 238000000137 annealing Methods 0.000 claims description 11
- 229910052796 boron Inorganic materials 0.000 claims description 5
- 229910052804 chromium Inorganic materials 0.000 claims description 5
- 238000005097 cold rolling Methods 0.000 claims description 5
- 239000012535 impurity Substances 0.000 claims description 5
- 229910052749 magnesium Inorganic materials 0.000 claims description 5
- 229910052748 manganese Inorganic materials 0.000 claims description 5
- 229910052719 titanium Inorganic materials 0.000 claims description 5
- 229910052720 vanadium Inorganic materials 0.000 claims description 5
- 229910052733 gallium Inorganic materials 0.000 claims description 4
- 239000000203 mixture Substances 0.000 claims description 4
- 230000000694 effects Effects 0.000 description 17
- 238000005530 etching Methods 0.000 description 17
- 238000004090 dissolution Methods 0.000 description 13
- 238000010438 heat treatment Methods 0.000 description 13
- 230000015572 biosynthetic process Effects 0.000 description 11
- 238000007788 roughening Methods 0.000 description 9
- 239000011248 coating agent Substances 0.000 description 7
- 238000000576 coating method Methods 0.000 description 7
- 238000000034 method Methods 0.000 description 5
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 4
- 230000000052 comparative effect Effects 0.000 description 4
- 229910052742 iron Inorganic materials 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 239000000243 solution Substances 0.000 description 4
- 238000009749 continuous casting Methods 0.000 description 3
- 238000007796 conventional method Methods 0.000 description 3
- 230000007547 defect Effects 0.000 description 3
- WNLRTRBMVRJNCN-UHFFFAOYSA-N adipic acid Chemical compound OC(=O)CCCCC(O)=O WNLRTRBMVRJNCN-UHFFFAOYSA-N 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 238000005098 hot rolling Methods 0.000 description 2
- 230000001965 increasing effect Effects 0.000 description 2
- 230000001105 regulatory effect Effects 0.000 description 2
- 229920006395 saturated elastomer Polymers 0.000 description 2
- 230000004580 weight loss Effects 0.000 description 2
- 229910000838 Al alloy Inorganic materials 0.000 description 1
- 229910018191 Al—Fe—Si Inorganic materials 0.000 description 1
- 229910001122 Mischmetal Inorganic materials 0.000 description 1
- 239000001361 adipic acid Substances 0.000 description 1
- 235000011037 adipic acid Nutrition 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- KGBXLFKZBHKPEV-UHFFFAOYSA-N boric acid Chemical compound OB(O)O KGBXLFKZBHKPEV-UHFFFAOYSA-N 0.000 description 1
- 239000004327 boric acid Substances 0.000 description 1
- 239000010406 cathode material Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 238000005238 degreasing Methods 0.000 description 1
- 230000003111 delayed effect Effects 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 239000008151 electrolyte solution Substances 0.000 description 1
- 238000000866 electrolytic etching Methods 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 230000005764 inhibitory process Effects 0.000 description 1
- 229910000765 intermetallic Inorganic materials 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 238000001953 recrystallisation Methods 0.000 description 1
- 238000005096 rolling process Methods 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
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Description
この発明は、電解コンデンサの電極に用いられる電解コンデンサ用アルミニウム箔およびその製造方法に関するものである。 The present invention relates to an electrolytic capacitor aluminum foil used for an electrode of an electrolytic capacitor and a method of manufacturing the same.
電解コンデンサの電極に用いられるアルミニウム箔は、表面に酸化皮膜を形成してコンデンサ用電極としての機能を与えている。ところで、この電解コンデンサ用アルミニウム箔に対しては、電極として用いたときの単位面積当たりの静電容量を大きくするために、酸化皮膜の形成に先だって電気的なエッチング(例えば直流エッチング)によって表面を粗面化して表面積を増大させる処理が一般に行われている。この粗面化では、アルミニウム箔の表面に微小なピットが多数形成されることで表面積が増大するので、ピットを高密度、均一に分散させて粗面化率を向上させる種々の工夫がなされている。その一つの手法としてアルミニウム箔の成分としてさまざまな元素を微量添加することによってピットの形成を促進することが提案されている(例えば特許文献1)。
しかしながら、アルミニウム箔に微量含まれる成分の多くは無効溶解を引き起こす作用があり粗面化を阻害する。このため、ピット形成に効果がある成分を添加しても、無効溶解によってピット形成効果が阻害されて粗面化において不十分な結果しか得られないという問題がある。 However, many of the components contained in a trace amount in the aluminum foil have an effect of causing ineffective dissolution and inhibit roughening. For this reason, there is a problem that even if a component effective for pit formation is added, the pit formation effect is hindered by ineffective dissolution, and only an insufficient result in roughening can be obtained.
本発明は、上記事情を背景としてなされたものであり、直流エッチングなどにおいてピット形成の作用が十分であって高密度、均一にピットを形成して高い静電容量を得ることができる電解コンデンサ用アルミニウム箔およびその製造方法を提供することを目的とする。 The present invention has been made against the background of the above circumstances, and for electrolytic capacitors capable of obtaining a high capacitance by forming pits uniformly and with high density and pit formation enough in direct current etching and the like. An object is to provide an aluminum foil and a method for producing the same.
すなわち本発明の電解コンデンサ用アルミニウム箔は、質量比で、Fe:5〜100ppm、Si:5〜100ppm、Cu:1〜100ppm、Pb:0.1〜5ppm、希土類元素:0.1〜10ppm、Sn:0.5〜5ppmを含有し、残部が99.9%以上のAlと不可避不純物からなることを特徴とする。 That is, the aluminum foil for electrolytic capacitors of the present invention has a mass ratio of Fe: 5 to 100 ppm, Si: 5 to 100 ppm, Cu: 1 to 100 ppm, Pb: 0.1 to 5 ppm, rare earth element: 0.1 to 10 ppm, Sn: 0.5 to 5 ppm is contained, and the balance is 99.9% or more of Al and inevitable impurities.
また、上記成分に加えて、さらに、質量比でZn:1〜20ppmを含有することができる。
また、上記成分に加えて、さらに、質量比でZr:1〜50ppmを含有することができる。
さらに、上記各成分において、不可避不純物中のMn、Mg、Cr、Ti、B、V、Gaの総和量を10ppm以下とすることができる。
Moreover, in addition to the said component, Zn: 1-20ppm can be contained by mass ratio further.
Moreover, in addition to the said component, Zr: 1-50ppm can be contained by mass ratio further.
Furthermore, in each of the above components, the total amount of Mn, Mg, Cr, Ti, B, V, and Ga in the inevitable impurities can be made 10 ppm or less.
また、本発明の電解コンデンサ用アルミニウム箔の製造方法の発明は、上記のいずれかの組成を有し、最終冷間圧延がされたアルミニウム箔に、最終焼鈍として、200〜400℃で1〜12時間保持した後、500〜600℃で4〜12時間保持することを特徴とする。 Moreover, invention of the manufacturing method of the aluminum foil for electrolytic capacitors of this invention is 1-12 at 200-400 degreeC as final annealing to the aluminum foil which has one of said compositions and was finally cold-rolled. It is characterized by holding for 4 to 12 hours at 500 to 600 ° C. after holding for a period of time.
以下に、本発明における各成分および製造条件を規定した理由を説明する。
Fe、Si:各5〜100ppm
SiおよびFeは、合金表面にAl−Fe−Si系金属間化合物として分散してピットの起点となり、ピット密度を増加させる。ただし、いずれも5ppm未満では上記作用を得るのには不十分であり、一方、100ppmを越えるとピット密度が過度になってピット同士が合体して拡面率が増加しない。このためSi、Feの含有量をそれぞれ5〜100ppmに定める。なお、同様の理由でSiおよびFe含有量の下限をそれぞれ10ppm、上限をSiは50ppm、Feは30ppmとするのが望ましい。
Below, the reason which prescribed | regulated each component and manufacturing condition in this invention is demonstrated.
Fe, Si: 5 to 100 ppm each
Si and Fe are dispersed as an Al—Fe—Si intermetallic compound on the alloy surface to serve as pit starting points and increase the pit density. However, if the amount is less than 5 ppm, it is insufficient to obtain the above-described effect. On the other hand, if it exceeds 100 ppm, the pit density becomes excessive and the pits coalesce and the surface expansion rate does not increase. For this reason, the contents of Si and Fe are each set to 5 to 100 ppm. For the same reason, it is desirable that the lower limit of the Si and Fe contents is 10 ppm, the upper limit is 50 ppm for Si, and 30 ppm for Fe.
Cu:1〜100ppm
Cuは、アノード皮膜の形成とその上へのカソード皮膜の形成を促進させるために含有させる。ただし、その量が過小であると、アノード皮膜およびカソード皮膜が充分形成されず拡面にほとんど寄与しない無効溶解が進むので1ppm以上含有させる。一方、その量が過剰であると、アノード皮膜およびカソード皮膜が厚くなり過ぎて皮膜欠陥が形成され難くなり、また欠陥部からのピットの形成が阻害されるので、上限を100ppmとする。なお、同様の理由で下限を5ppm、上限を60ppmとするのが望ましい。
Cu: 1 to 100 ppm
Cu is contained in order to promote the formation of the anode coating and the formation of the cathode coating thereon. However, if the amount is too small, the anode coating and the cathode coating are not sufficiently formed, and the ineffective dissolution that hardly contributes to the surface expansion proceeds. On the other hand, if the amount is excessive, the anode coating and the cathode coating become too thick and it becomes difficult to form coating defects, and the formation of pits from the defective portion is hindered, so the upper limit is made 100 ppm. For the same reason, it is desirable to set the lower limit to 5 ppm and the upper limit to 60 ppm.
Pb:0.1〜5ppm
Pbは、ピット形成を促進する作用があり、この作用を十分に得るために0.1ppm以上含有させる。但し、5ppmを超えて含有させると、無効溶解を招いて粗面化を阻害する作用が見られるので、Pbの含有量を上記に限定する。なお、上記と同様に理由で、Pbの下限を0.3ppm、上限を2ppmとするのが望ましい。
Pb: 0.1-5 ppm
Pb has an action of promoting pit formation, and is contained in an amount of 0.1 ppm or more in order to sufficiently obtain this action. However, if the content exceeds 5 ppm, an effect of ineffective dissolution and inhibition of roughening is observed, so the Pb content is limited to the above. For the same reason as described above, it is desirable to set the lower limit of Pb to 0.3 ppm and the upper limit to 2 ppm.
希土類元素:0.1〜10ppm
Sn:0.5〜5ppm
希土類元素とSnとは、共存することによってピットを高密度、均一に分散させる作用があり、特に直流エッチングでその作用が顕著となる。この作用を十分に得るためには、希土類元素で0.1ppm、Snで0.5ppmを含有させることが必要であり、いずれかを欠くと上記作用を得ることができない。一方、これら元素を過剰に含有すると表層の過剰溶解が発生するので、希土類元素で10ppm、Snで5ppmを上限とする。なお、上記と同様の理由で、希土類元素の下限を0.5ppm、上限を3ppmとするのが望ましく、また、Snの下限を1ppm、上限を3ppmとするのが望ましい。
Rare earth elements: 0.1 to 10 ppm
Sn: 0.5-5 ppm
The coexistence of rare earth elements and Sn has an effect of uniformly dispersing pits at high density, and the effect is particularly remarkable in direct current etching. In order to obtain this effect sufficiently, it is necessary to contain 0.1 ppm of rare earth elements and 0.5 ppm of Sn. If any of these elements is lacking, the above effects cannot be obtained. On the other hand, since excessive dissolution of the surface layer occurs when these elements are excessively contained, the upper limit is 10 ppm for rare earth elements and 5 ppm for Sn. For the same reason as described above, the lower limit of the rare earth element is preferably 0.5 ppm and the upper limit is 3 ppm, and the lower limit of Sn is preferably 1 ppm and the upper limit is 3 ppm.
Al:純度99.9%以上
エッチング時にピット形成が効果的になされ、またコンデンサ用電極としたときにコンデンサとして良好な特性を得られるように、アルミニウム箔の純度は99.9%以上が必要である。なお、同様の理由で、純度99.98%以上が望ましい。
Al: Purity of 99.9% or more The purity of the aluminum foil needs to be 99.9% or more so that pits can be effectively formed during etching and good characteristics can be obtained as a capacitor when used as a capacitor electrode. is there. For the same reason, a purity of 99.98% or more is desirable.
Zn:1〜20ppm
Znはカソード皮膜生成時に皮膜欠陥を作る作用があり、エッチングの進行性を高める元素なので所望により含有させることができる。ただし、1ppm未満では上記作用が十分に得られず、20ppmを超えると欠陥量が多すぎて無効溶解が促進してしまうので、所望により含有させる場合の含有量を1〜20ppmに限定する。なお、同様の理由で、下限を3ppm、上限を15ppmとするのが望ましい。
Zn: 1 to 20 ppm
Zn has an effect of forming a film defect when the cathode film is formed, and can be contained as desired because it is an element that enhances the etching progress. However, if the content is less than 1 ppm, the above effect cannot be obtained sufficiently. If the content exceeds 20 ppm, the amount of defects is too much to promote ineffective dissolution, so the content in the case of inclusion is limited to 1 to 20 ppm. For the same reason, it is desirable to set the lower limit to 3 ppm and the upper limit to 15 ppm.
Zr:1〜50ppm
Zrは、前記した希土類元素とSnとの共存による作用を高める効果があり、所望により含有させる。ただし、該効果を十分に得るためには1ppm以上の含有が必要である。一方、Zrを50ppmを超えて含有すると、アルミニウムの再結晶化が遅延し、高い立方晶率が得られなくなるため、Zrを所望により含有させる際の含有量を1〜50ppmに定める、
Zr: 1-50 ppm
Zr has an effect of enhancing the action due to the coexistence of the rare earth element and Sn, and is contained as desired. However, the content of 1 ppm or more is necessary to obtain the effect sufficiently. On the other hand, if Zr is contained in excess of 50 ppm, the recrystallization of aluminum is delayed, and a high cubic rate cannot be obtained. Therefore, the content when Zr is optionally contained is set to 1 to 50 ppm.
Mn、Mg、Cr、Ti、B、V、Gaの総和量:10ppm以下
Mn、Mg、Cr、Ti、B、Vは、粗面化を阻害する無効溶解を増大させる元素であるので、所望によりこれら元素の総和量を10ppm以下に規制して無効溶解を防止する。また、Mn等の総和量は、上記と同様の理由でさらに8ppm以下とするのが望ましい。
Total amount of Mn, Mg, Cr, Ti, B, V, and Ga: 10 ppm or less Mn, Mg, Cr, Ti, B, and V are elements that increase ineffective dissolution that inhibits roughening. The total amount of these elements is restricted to 10 ppm or less to prevent ineffective dissolution. Further, the total amount of Mn and the like is desirably 8 ppm or less for the same reason as described above.
最終焼鈍:200〜400℃×1〜12時間
500〜600℃×4〜12時間
冷間圧延終了後に、アルミニウム箔に上記条件で最終焼鈍することで、箔中に含まれるSnを表面濃縮させてSnによる前記効果を高めることができる。
Snの濃縮を十分に行うために前段の加熱は200℃以上で保持時間1時間以上にすることが必要である。一方、12時間を超えても効果は飽和するので保持時間は12時間以下とする。また、加熱温度を400℃超にすると、他元素の表面濃縮が進行し、Snが十分に表面濃縮できなくなるため、前段の処理条件を200〜400℃×1〜12時間とする。また、後段の加熱では立方晶を十分に発達させることが目的となるため、500℃以上の加熱が必要となる。600℃を超えると、アルミの溶解が始まり、箔の密着等重大な問題が発生するため、上限は600℃とする。保持時間に関しては、立方晶の成長のために4時間以上必要であり、その効果は12時間超保持しても飽和するため、4〜12時間とする。上記2段の加熱では、前段の加熱後、引き続き昇温させて後段の加熱を行うのが望ましいが、前段の加熱後、冷却過程を経て、後段の加熱を行うことも可能である。
Final annealing: 200-400 ° C x 1-12 hours
After the end of cold rolling at 500 to 600 ° C. for 4 to 12 hours, the aluminum foil is subjected to final annealing under the above-described conditions, so that Sn contained in the foil can be concentrated on the surface to enhance the effect of Sn.
In order to sufficiently condense Sn, it is necessary that the heating in the previous stage is 200 ° C. or higher and the holding time is 1 hour or longer. On the other hand, since the effect is saturated even if it exceeds 12 hours, the holding time is set to 12 hours or less. Further, if the heating temperature is higher than 400 ° C., the surface concentration of other elements proceeds and Sn cannot be sufficiently concentrated on the surface, so that the pretreatment conditions are 200 to 400 ° C. × 1 to 12 hours. Moreover, since the objective of the latter stage heating is to sufficiently develop cubic crystals, heating at 500 ° C. or higher is required. If the temperature exceeds 600 ° C., melting of aluminum starts and serious problems such as adhesion of the foil occur. Therefore, the upper limit is set to 600 ° C. Regarding the holding time, 4 hours or more are required for the growth of cubic crystals, and the effect is saturated even if held for more than 12 hours. In the above-mentioned two-stage heating, it is desirable that the temperature is continuously raised after the former stage heating and then the latter stage heating is performed. However, after the former stage heating, the latter stage heating can be performed through a cooling process.
以上説明したように、本発明の電解コンデンサ用アルミニウム箔によれば、質量比で、Fe:5〜100ppm、Si:5〜100ppm、Cu:1〜100ppm、Pb:0.1〜5ppm、希土類元素:0.1〜10ppm、Sn:0.5〜5ppmを含有し、残部が99.9%以上のAlと不可避不純物からなるので、特にSnと希土類元素とを共存して含有することでエッチング性が向上し、高密度で均一分散したピット形成が可能になる。この結果、エッチングによって高い粗面化率が得られ、コンデンサとして用いた際に高い静電容量が得られる。また、所望によりZn、Zrを含有することでエッチング性をさらに改善でき、また、Mn、Mg、Cr、Ti、B、V、Gaの総和量を規制することで無効溶解を少なくして粗面化率を向上できる。 As described above, according to the aluminum foil for electrolytic capacitors of the present invention, by mass ratio, Fe: 5 to 100 ppm, Si: 5 to 100 ppm, Cu: 1 to 100 ppm, Pb: 0.1 to 5 ppm, rare earth element : 0.1 to 10 ppm, Sn: 0.5 to 5 ppm, with the balance being 99.9% or more of Al and inevitable impurities, especially by containing Sn and rare earth elements together, etching property And pit formation with high density and uniform dispersion becomes possible. As a result, a high roughening rate is obtained by etching, and a high capacitance is obtained when used as a capacitor. Further, if desired, the etching property can be further improved by containing Zn and Zr, and the amount of ineffective dissolution can be reduced by regulating the total amount of Mn, Mg, Cr, Ti, B, V, and Ga, and the rough surface. The conversion rate can be improved.
また、本発明の電解コンデンサ用アルミニウム箔によれば、上記組成を有し、最終冷間圧延がされたアルミニウム箔に、最終焼鈍として、200〜400℃で1〜12時間保持した後、500〜600℃で4〜12時間保持するので、Snの濃縮挙動によって上記アルミニウム箔の効果を一層顕著にすることができる。 Moreover, according to the aluminum foil for electrolytic capacitors of this invention, after hold | maintaining at 200-400 degreeC for 1 to 12 hours as final annealing to the aluminum foil which has the said composition and was finally cold-rolled, 500- Since it hold | maintains at 600 degreeC for 4 to 12 hours, the effect of the said aluminum foil can be made more remarkable with the concentration behavior of Sn.
以下に、本発明の一実施形態を説明する。
純度99.9%以上で本発明の成分となるように調製された高純度アルミニウム材は、常法により得ることができ、本発明としては特にその製造方法が限定されるものではない。例えば、半連続鋳造によって得たスラブを熱間圧延したものを用いることができるし、その他に連続鋳造により得られる高純度アルミニウム材を対象とするものであってもよい。なお、REMの含有に際してはミッシュメタルを用いることができる。上記熱間圧延または連続鋳造圧延によって例えば数mm厚程度のシート材とする。このシート材に対し冷間圧延を行い、数十μmから100μm程度のアルミニウム合金箔を得る。なお、冷間圧廷途中あるいは冷間圧廷終了後に適宜脱脂を加えてもよく、また冷間圧廷の途中で適宜中間焼鈍を加えても差し支えない。
Hereinafter, an embodiment of the present invention will be described.
A high-purity aluminum material prepared to be a component of the present invention with a purity of 99.9% or more can be obtained by a conventional method, and the production method is not particularly limited as the present invention. For example, a hot-rolled slab obtained by semi-continuous casting can be used, or a high-purity aluminum material obtained by continuous casting can be used. Note that misch metal can be used when REM is contained. For example, a sheet material having a thickness of about several mm is formed by the hot rolling or continuous casting rolling. This sheet material is cold-rolled to obtain an aluminum alloy foil of about several tens of μm to 100 μm. It should be noted that degreasing may be appropriately added during the cold press or after the end of the cold press, and intermediate annealing may be appropriately added during the cold press.
最終冷間圧延後には、図1に示すように好適には前段で200〜400℃×1〜12時間、後段で500〜600℃×4〜12時間に加熱する最終焼鈍熱処理を行う。なお、この例では、前段の加熱後、冷却することなく昇温させて後段の加熱を行っている。 After the final cold rolling, as shown in FIG. 1, a final annealing heat treatment is preferably performed in which heating is performed at 200 to 400 ° C. for 1 to 12 hours in the former stage and 500 to 600 ° C. for 4 to 12 hours in the latter stage. In this example, after the former heating, the latter heating is performed by raising the temperature without cooling.
上記各工程を経て得られたアルミニウム箔には、その後、エッチング処理がなされる。エッチング処理は、塩酸を主体とする電解液を用いた電解エッチング等によって行われる。本発明としてはこのエッチング処理の具体的条件等について特に限定されるものではなく、常法に従って行うことができるが、主として直流エッチングが適用される。
エッチング処理においては、前記成分の設定によって箔にピットが高密度で形成され、高い粗面化率が得られるとともに、無効溶解が抑制される。この箔を常法により電解コンデンサに電極として組み込むことにより静電容量の高いコンデンサが得られる。
The aluminum foil obtained through the above steps is then subjected to an etching process. The etching process is performed by electrolytic etching using an electrolytic solution mainly composed of hydrochloric acid. The present invention is not particularly limited with respect to specific conditions and the like of this etching treatment, and can be performed according to a conventional method, but DC etching is mainly applied.
In the etching process, pits are formed at a high density on the foil by setting the above components, and a high roughening rate is obtained and ineffective dissolution is suppressed. A capacitor having a high capacitance can be obtained by incorporating this foil as an electrode in an electrolytic capacitor by a conventional method.
本発明は中高圧電解コンデンサの陽極として使用するのが好適であるが、本発明としてはこれに限定されるものではなく、より化成電圧の低いコンデンサ用としても使用することができ、また電解コンデンサの陰極用の材料として使用することもできる。 The present invention is preferably used as an anode of a medium-high voltage electrolytic capacitor. However, the present invention is not limited to this, and can be used for a capacitor having a lower formation voltage. It can also be used as a cathode material.
以下に、本発明の実施例を比較例と比較しつつ説明する。
表1に示す組成を有する高純度アルミニウムを溶製し、熱間圧延、冷間圧延を経て110μm厚の高純度アルミニウム箔を製造した。これらのアルミニウム箔に表1に示す条件で最終焼鈍を施した。全ての高純度アルミニウム箔に対し、以下の条件でエッチングを行いアルミニウム箔を粗面化した。
Examples of the present invention will be described below in comparison with comparative examples.
High-purity aluminum having the composition shown in Table 1 was melted, and a high-purity aluminum foil having a thickness of 110 μm was manufactured through hot rolling and cold rolling. These aluminum foils were subjected to final annealing under the conditions shown in Table 1. All high-purity aluminum foils were etched under the following conditions to roughen the aluminum foil.
(直流エッチング)
75℃HCl 1M、H2SO4 3M溶液中で200mA/cm2の直流電流を120秒印加後、80℃HCl 2M溶液中で50mA/cm2の直流電流を600秒印加した。
なお、エッチングに際し、エッチング前後のアルミニウム箔の重量を測定し、重量の減少分を溶解減量とした。
(静電容量測定)
上記エッチング箔を1×5cmのサイズに切り出し、80℃ホウ酸80g/l溶液にて300Vの化成を行い、150g/lアジピン酸溶液中にて容量を測定した。
(DC etching)
A direct current of 200 mA / cm 2 was applied for 120 seconds in a 75 ° C HCl 1M, H 2 SO 4 3M solution, and then a 50 mA / cm 2 direct current was applied for 600 seconds in an 80 ° C HCl 2M solution.
In the etching, the weight of the aluminum foil before and after the etching was measured, and the decrease in weight was taken as the dissolution loss.
(Capacitance measurement)
The etching foil was cut into a size of 1 × 5 cm, formed at 300 ° C. with an 80 ° C. boric acid 80 g / l solution, and the capacity was measured in a 150 g / l adipic acid solution.
上記で測定した溶解減量および静電容量は、実施例1の溶解減量および静電容量を基準にして百分率で相対評価した。これらの評価結果を表2に示した。
表2から明らかなように、本発明の実施例は、いずれも良好な静電容量を示している。また実施例のうち、Zrを添加したものは、未添加のものに比べて静電容量がより向上することが明らかになった。さらに、冷間圧延後に最終焼鈍を2段で行ったもの(実施例13〜15)は、1段の最終焼鈍を行ったものに比べて静電容量が向上することも明らかになった。
The dissolution weight loss and capacitance measured above were relative evaluated as percentages based on the dissolution weight loss and capacitance of Example 1. The evaluation results are shown in Table 2.
As can be seen from Table 2, all of the examples of the present invention exhibit good capacitance. In addition, among the examples, it has been clarified that those added with Zr have a higher capacitance than those not added. Furthermore, it became clear that what carried out the final annealing after cold rolling by 2 steps | paragraphs (Examples 13-15) improved an electrostatic capacitance compared with what performed the 1st step final annealing.
一方、比較例は、静電容量が実施例よりも劣る結果となった。また、比較例4、6に見られるように、REM(希土類元素)、Snのいずれか一方を含有していても静電容量の向上効果は殆ど見られなかった。また、Snの含有量が本発明の規定範囲を外れるもの(比較例5)においても良好な静電容量は得られなかった。 On the other hand, in the comparative example, the electrostatic capacity was inferior to that of the example. Further, as seen in Comparative Examples 4 and 6, even when either REM (rare earth element) or Sn was contained, the effect of improving the capacitance was hardly seen. In addition, even when the Sn content was outside the specified range of the present invention (Comparative Example 5), good electrostatic capacity was not obtained.
Claims (5)
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