JP4160286B2 - LSI pattern dimension measurement location selection method - Google Patents

Description

[0001]
BACKGROUND OF THE INVENTION
The present invention relates to a photomask used for manufacturing a semiconductor wafer or a dimension measurement location selection of an LSI (semiconductor integrated circuit) pattern formed in each chip region on a wafer processed using the photomask. On the way This is used to guarantee the dimensional quality (accuracy) of an LSI pattern when designing a photomask using a CAD (Computer Aided Design) apparatus.
[0002]
[Prior art]
2. Description of the Related Art Conventionally, when manufacturing an LSI, the dimension measurement of an LSI pattern on a photomask used for manufacturing a semiconductor wafer or a wafer processed using the same (hereinafter referred to as a processed wafer) is performed on the LSI chip area on the mask. This was realized by measuring a dimension measurement mark arranged in advance on the outside.
[0003]
However, with the miniaturization of the processing dimension, there has been a problem that the correlation between the finished dimension of the dimension measurement mark in a special environment outside the chip area and the pattern finished dimension inside the chip area becomes small.
[0004]
In order to solve this problem, in recent years, the quality (accuracy) of the photomask mask and the processed wafer has been ensured by measuring the pattern dimensions inside the chip region.
[0005]
Conventionally, layout data or EB (electron beam) drawing data is displayed in a viewer to select a pattern measurement area inside a chip area on a photomask or a processed wafer, and an appropriate measurement area is selected manually. .
[0006]
However, hundreds of measurement points must be selected for one photomask or post-processed wafer. If you work manually, it takes a long time and effort to select the measurement points, and many work errors occur. There was a problem.
[0007]
When this pattern dimension measurement location is automatically selected using an electronic computer, the process of extracting the appropriate part of the LSI pattern width, space, etc. as the pattern dimension measurement location is a design rule check that is an existing CAD tool. (Design Rule Check; DRC) This can be realized by the function.
[0008]
However, the number extracted using the DRC function differs depending on the layout data or the EB drawing data, and cannot be known in advance, and usually a very large number is extracted. The number of measurement points is limited to a fixed or fixed range due to the time constraint of the dimension measurement operation, and it is also necessary to uniformly disperse in the photomask or the processed wafer. Therefore, there has been a demand for realizing a means for selecting a specific number of dimension measurement locations so that a large number of size measurement location candidates are uniformly distributed in the photomask or the processed wafer.
[0009]
Further, as described above, when the process of extracting an appropriate portion as a dimension measurement location of the LSI pattern is realized by the DRC function, when only the figure (rectangle) of the measurement location is output as an extraction result, However, there was a problem that the measurement direction and measurement dimensions could not be determined.
[0010]
Conventionally, the size of the LSI pattern used to measure the dimensions of the photomask or processed wafer is added to the design data. Therefore, the size of the design data and the size of the mask on the mask accompanying complicated graphic processing, etc. When processing that changes the dimensions is performed, it is necessary to take out the dimension values by taking the processing contents into consideration.
[0011]
However, in recent years, along with processing by OPC (0ptical Proximity Correction) processing and the like, there are many cases where dimensions on a photomask cannot be simply obtained from design data, and information for dimension measurement is created. The effort is getting bigger.
[0012]
Further, as an order of measuring the pattern dimensions on the processed wafer, conventionally, as shown in FIG. 18, for each of the measurement locations 1, 2, 3, 4 of the four LSI chip regions CHIP1 to CHIP4 adjacent to each other, As shown by the arrows in the figure, “a method of sorting using the X coordinate of the measurement location as the first key and the Y coordinate as the second key” or “the Y coordinate of the measurement location as the first key and the X coordinate as the second key” As a sort method.
[0013]
At this time, when the operator who performs the dimension measurement work performs the dimension measurement while visually comparing the drawing showing the measurement pattern with the pattern to be measured, the measurement pattern is different for each measurement, so that the measurement efficiency is poor. was there.
[0014]
[Problems to be solved by the invention]
As described above, when manually selecting the pattern dimension measurement location of the conventional photomask or processed wafer, there are problems such as long time and labor for selecting the measurement location and frequent operation errors. .
[0015]
In addition, when selecting a number of measurement locations using the DRC function when selecting pattern dimension measurement locations on a photomask or a processed wafer, a specific number of dimensions can be measured so that they are uniformly distributed in the photomask or the processed wafer. There has been a demand for realization of a means for selecting locations. At this time, when only the figure (rectangle) of the measurement location is extracted, there is a problem that the measurement direction and the measurement dimension cannot be determined depending on the aspect ratio of the rectangle. In addition, when processing that changes the dimensions on the design data and the dimensions on the mask due to complicated graphic processing, etc., it was necessary to take out the dimension value by taking into account the processing contents, There has been a problem that it takes time and effort to create information for measurement.
[0016]
Further, in determining the pattern dimension measurement order on the conventional post-processed wafer, there is a problem that the measurement efficiency is poor because the pattern to be measured is different for each measurement.
[0017]
The present invention has been made to solve the above-mentioned problems. When a pattern dimension measurement location on a photomask or a processed wafer is automatically selected using a CAD device, it is automatically selected at high speed and appropriately. An object of the present invention is to provide an LSI pattern dimension measurement location selection method.
[0018]
Further, according to the present invention, when automatically selecting a pattern dimension measurement location of a photomask or a processed wafer by using a CAD device, a specific number is arranged so that a large number of size measurement location candidates are uniformly distributed in the photomask. An object of the present invention is to provide an LSI pattern dimension measurement location selection method capable of selecting the dimension measurement location.
[0019]
Another object of the present invention is to create information used for measuring the dimensions of an LSI pattern on a photomask or post-processed wafer, and to design data on the mask with complicated graphic processing. An object of the present invention is to provide an LSI pattern dimension measurement information creation method capable of easily creating information used for mask dimension measurement even when the pattern size changes variously.
[0020]
Another object of the present invention is to reduce the burden on the operator who performs the dimension measurement work when determining the dimension measurement order of the LSI pattern on the processed wafer, thereby improving measurement efficiency and reducing measurement errors. An object of the present invention is to provide a method for determining the dimension measurement order of LSI patterns to be obtained.
[0022]
[Means for Solving the Problems]
Book The LSI pattern dimension measurement location selection method of the present invention uses a computer-aided design device to extract a pattern measurement location candidate for an LSI chip area pattern on a wafer processed using a photomask from LSI layout data. At the time of selecting a dimension measurement location from among them, at least means for obtaining the number of dimension measurement points to be selected and means for obtaining a rectangular area coordinate value defining the entire area of the photomask or the processed wafer are used. Based on the rectangular area coordinate value and the number of dimension measurement points assigned to the area, the area is divided into two equal parts so that the size in the x direction is equal, and appropriate for each area according to the number of dimension measurement location candidates existing in each area. A first step of allocating the number of dimension measurement points, and the rectangular area coordinate value and the number of dimension measurement points assigned to the area. And dividing the region into two equal parts so that the y-direction sizes are equal to each other, and assigning an appropriate number of dimension measurement points to each region according to the number of dimension measurement location candidates existing in each region; In the second step, when the number of dimension measurement points in a certain area is 1, an arbitrary dimension measurement place candidate in the area or a dimension measurement place candidate present closest to the center point of the area is set as a dimension measurement place. When the number of dimension measurement points in a certain area is 2 or more, the second step or the first step is applied to the area and the number of dimension measurement points assigned to the area.
[0025]
DETAILED DESCRIPTION OF THE INVENTION
Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings.
[0026]
<First Embodiment>
FIG. 1 is an overall view of a method of selecting a dimension measurement location of an LSI pattern of a photomask (or a processed wafer processed using the same) used for manufacturing a semiconductor wafer according to the first embodiment of the present invention. Processing is shown.
[0027]
When selecting a dimensional measurement location of a pattern of an LSI chip area on a wafer processed using a photomask from a LSI layout data using a CAD device, as shown in FIG. A dimension measurement location selection condition file 10 is obtained. Then, a DRC command description is created by a function 11 for creating a DRC command description for selecting a dimension measurement location of an LSI pattern from LSI layout data based on the dimension measurement location selection condition file 10, and a DRC command description file 12 is created. To store.
[0028]
Next, DRC is executed by the DRC function 14 based on the DRC command description inputted from the DRC command description file 12 and the LSI layout pattern data inputted from the LSI layout pattern data file 13, and the dimension of the LSI pattern outputted by this execution is executed. The measurement location candidate data is stored in the dimension measurement location candidate file 15.
[0029]
Next, a dimension measurement location is extracted and extracted by a number limiting function 16 that extracts a required number of dimension measurement locations based on data input from the dimension measurement location candidate file 15 and data obtained by the DRC function 14. The dimension measurement location data is stored in the dimension measurement location file 17.
[0030]
FIG. 2 shows an example of the dimension measurement location selection condition file 10 describing the dimension measurement location selection conditions in FIG.
[0031]
FIG. 3 shows a specific example of the DRC command description creation function 11 for dimension measurement location selection in FIG.
[0032]
This function is based on the conditions described in the dimension measurement location selection condition file 10 and the DRC command description template as input, and variable parameters among the descriptions in the template based on the conditions described in the dimension measurement location selection condition file 10. It is determined and output to the DRC command description file (12 in FIG. 1) as a file that can be input to the DRC function (14 in FIG. 1).
[0033]
4A to 4D are diagrams for explaining a process of selecting a dimension measurement location candidate from the layout pattern when the DRC function 14 in FIG. 1 is executed.
[0034]
That is, when the layout data corresponding to the layout pattern shown in FIG. 4A is input, the DRC function describes the DRC command description corresponding to condition 1 in the dimension measurement location selection condition file 10 shown in FIG.
According to A = (command description for extracting a portion from the width min-width to less than max-width from the layer), the pattern portion a having an appropriate width is selected as shown in FIG. .
[0035]
Next, a DRC command description corresponding to condition 2 in the dimension measurement location selection condition file 10 shown in FIG.
In accordance with B = (command description for extracting a portion from A to min-space but less than max-space), pattern portion b having an appropriate interval is selected as intermediate layer B as shown in FIG. .
[0036]
Next, a DRC command description corresponding to condition 3 in the dimension measurement location selection condition file 10 shown in FIG.
According to C = (command description for extracting a part from B with a length of min-length or more and less than max-length), an intermediate layer C is selected by selecting a pattern part c having an appropriate length as shown in FIG. As a result, it is output to a dimension measurement location candidate file (15 in FIG. 1).
[0037]
As described above, the number limiting function (16 in FIG. 1) extracts only the number required for the dimension measurement from the many dimension measurement position candidates extracted by the DRC function 14 and stored in the dimension measurement position candidate file 15. Output to the dimension measurement location file 17. At this time, the number is narrowed down for each condition such as pattern width / interval / length as shown in FIG. 4 (A), (B) or (C) from the LSI layout figure.
[0038]
That is, in the dimension measurement location selection method according to the first embodiment, the dimension measurement location of the pattern of the LSI chip area on the wafer processed using the photomask or the wafer is processed from the LSI layout data using the CAD device. A step of obtaining an LSI pattern dimension measurement location selection condition, and a step of creating a DRC command description for selecting an LSI pattern dimension measurement location from the LSI layout data based on the dimension measurement location selection condition; , A step of executing DRC by inputting the design rule check command description and the LSI pattern, and a number limiting step of extracting a required number of dimension measurement locations by inputting the dimension measurement location candidates of the LSI pattern output by the execution of the DRC It is characterized by comprising.
[0039]
According to the dimension measurement location selection method according to the first embodiment, the LSI layout pattern or the mask pattern that is the result of correcting the LSI layout pattern by OPC is adapted to the pattern width / interval and other conditions. By extracting a part to be performed using the DRC function, a dimension measurement location is selected, and the dimension measurement location of the LSI pattern can be automatically and appropriately selected.
[0040]
<Second Embodiment>
The second embodiment corresponds to a specific example of the number limiting function in the first embodiment.
[0041]
FIG. 5 shows functions, files, and the like used in the method for selecting a dimension measurement location of an LSI pattern on a photomask (or a processed wafer) according to the second embodiment of the present invention.
[0042]
6 to 8 are flowcharts showing the in-region dimension measurement location determination process in the dimension measurement location selection method of FIG. FIGS. 9A to 9E are diagrams for explaining the entire contents of the dimension measurement location selection processing of FIGS. 6 to 8.
[0043]
In order to perform the dimension measurement location selection process, as shown in FIG. 6, in addition to the processing target data, the number of dimension measurement points NUM to be selected, the area coordinates A0 indicating the photomask drawing area, and the initial value in the direction of area division D is required. Here, NUM and A0 are values given from the outside.
[0044]
In this example, it is assumed that NUM is given 5 shown in parentheses at the division 0 stage shown in FIG. 9A, and AO is the area A0 at the division 0 stage shown in FIG. 9A. It is assumed that the lower left coordinate value (X0, Y0) and the upper right coordinate value (X1, Y1) are given. D can be arbitrarily set to either “X” or “Y” as an initial value, but is set to “X” in this embodiment.
[0045]
By performing the in-region dimension measurement location determination process using these pieces of information, the dimension measurement location can be selected so as to be uniform within the photomask surface.
[0046]
7 and 8 are flowcharts showing the in-region dimension measurement location determination process in FIG.
[0047]
As shown in FIG. 7, when the process is started, first, it is inspected whether the in-region dimension measurement point NUM is 1. If NUM is 1, any one of the dimension measurement candidates in the region is selected as a dimension measurement location, and the process ends.
[0048]
If NUM is not 1, check whether NUM is equal to or greater than the number of dimension measurement location candidates in the area. When this condition is satisfied, all the dimension measurement candidates in the region are selected as dimension measurement locations, and the process ends. If this condition is not satisfied, the following processing is required.
[0049]
First, divide the given region into two in the D direction and let them be A1 and A2. In this case, since the initial value of D is “X”, the area A0 is divided into two left and right areas A1-1 and A1-2 as in the division 1 stage shown in FIG. 9B.
[0050]
Next, the number of dimension measurement points 5 assigned to the area A0 is allocated as NUMl and NUM2 to each divided area. Basically, both are set to 1/2 of NUM. However, if the number of dimension measurement points in area A1-1 is smaller than NUM1, NUMl is set as the number of dimension measurement points in area A1-1 and NUM2 is set to NUM- Set to NUMl.
[0051]
On the contrary, when the number of dimension measurement location candidates in the area A1-2 is smaller than NUM2, NUM2 is set as the number of size measurement location candidates A1-2 and NUM1 is set to NUM-NUM2.
[0052]
If neither of the above conditions is met, set both NUMl and NUM2 to 1/2 of NUM. However, if NUM is an odd number, the number of dimension measurement points for the area with the larger number of dimension measurement point candidates will increase. Distribute. In the division 1 stage shown in FIG. 9B, NUM1 is set to 3 and NUM2 is set to 2.
[0053]
Next, as shown in FIG. 8, the division direction D is changed to “Y” if the current value is “X”, and to “X” if it is “Y”, and after calculating the coordinates of the areas A1 and A2, The process ends by recursively executing the in-area dimension measurement location determination process in order for the areas A1, A2 and the number of dimension measurement points assigned to the area. 9 (c), (d), and (e) show the regions of the divisions 2, 3, and 4 in this case.
[0054]
That is, the dimension measurement location method according to the second embodiment uses a CAD apparatus to measure the size of a pattern in an LSI chip area on a photomask (or a wafer processed using the LSI) from LSI layout data. Means for obtaining at least the number of dimension measurement points to be selected and means for obtaining rectangular area coordinate values defining the entire area of the photomask or post-processed wafer when extracting candidates and selecting a dimension measurement location from them And bisect the region so that the size in the x direction is equal based on the rectangular region coordinate value and the number of dimension measurement points assigned to the region, and depending on the number of dimension measurement location candidates existing in each region, A first step of assigning an appropriate number of dimension measurement points to the area, and based on the rectangular area coordinate value and the number of dimension measurement points assigned to the area; A second step of dividing the area into two equal parts so that the sizes in the y direction are equal, and assigning an appropriate number of dimension measurement points to each area according to the number of dimension measurement location candidates existing in each area; When the number of points is 1, an arbitrary dimension measurement location candidate in the area or a dimension measurement location candidate present closest to the center point of the area is selected as the dimension measurement location. is there.
[0055]
In other words, only the number of measurement points specified in advance is uniformly distributed over the entire area of the photomask from the dimension measurement location candidates extracted for each condition according to the pattern width / interval and other conditions from the LSI layout figure. It is characterized by selecting.
[0056]
According to the dimension measurement location selection method according to the second embodiment, a specific number of dimension measurement locations are selected from a large number of size measurement location candidates so as to be uniformly distributed in the photomask surface or the processed wafer surface. be able to.
[0057]
<Third Embodiment>
The third embodiment is applied when a large number of dimension measurement location candidates are extracted by the DRC function in the first embodiment.
[0058]
FIGS. 10A to 10C show a method for generating dimension measurement information of an LSI pattern on a photomask (or a processed wafer) according to the third embodiment of the present invention.
[0059]
When the rectangle b shown in FIG. 10B is extracted as a dimension measurement location candidate by the DRC function for the layout pattern a shown in FIG. 10A, the rectangle b shown in FIG. A pattern of rectangles c extending on both sides is created, and these rectangles b and c are output as data of different layers. Thereby, the measurement information for determining the position (coordinate value) of a dimension measurement location, a measurement dimension, and a measurement direction can be provided.
[0060]
Similarly to the above, the measurement information of the pattern interval dimension measurement location can be provided by outputting the rectangles b and c in FIG.
[0061]
FIG. 12 shows graphic information output by the dimension measurement information generation method shown in FIGS. 10A to 10C and FIG.
[0062]
The measurement position e can be determined from the center point coordinates of the rectangle b in FIG. 12, and the measurement dimension and the measurement direction d can be determined from the sides that do not overlap the sides of the rectangle c among the four sides of the rectangle b.
[0063]
FIGS. 13A and 13B show specific examples for creating a pattern c to be added in the dimension measurement information generating method shown in FIGS. 10A to 10C and FIG.
[0064]
In FIGS. 13A and 13B, f is an intermediate pattern for creating the additional pattern c, and g is a thick width for creating the intermediate pattern from the rectangle b.
[0065]
When the measurement location b is extracted by the measurement location extraction DRC function for the layout pattern a in FIG. 13A, an intermediate pattern f in which b is thickened by a certain distance g is created, and the common part of the patterns a and f is created. By extracting, the additional pattern c in FIG. 13B can be created.
[0066]
That is, the dimension measurement information generation method according to the third embodiment uses a computer-aided design apparatus for measuring the dimension of an LSI pattern on a photomask used for manufacturing a semiconductor wafer or a wafer processed using the same. When creating the dimension measurement information at the time of the selection processing, when the rectangular figure data is extracted as the dimension measurement location candidate of the pattern width and pattern interval by the DRC function, another rectangular figure data is created, These two rectangles are output to different layers.
[0067]
According to the third embodiment, from the measurement location extracted by the DRC function, measurement information for determining the position (coordinate value), measurement size, and measurement direction of the dimension measurement location can be obtained only by outputting graphic data. It is possible to express and communicate.
[0068]
<Fourth Embodiment>
The fourth embodiment is applied when a dimension measurement location candidate designated by the designer is extracted by the DRC function in the first embodiment.
[0069]
FIG. 14 shows an LSI pattern dimension measurement information generation method on a photomask (or a processed wafer) according to Example 1 of the fourth embodiment of the present invention.
[0070]
A dimension measurement location / dimension extraction pattern 1 is added to the design data 2 before processing according to the designation of the designer. The dimension measurement location / dimension extraction pattern 1 is made larger in the length measurement direction of the measurement dimension 3 than the post-processing data 4 that can be changed by processing such as OPC.
[0071]
By calculating the center coordinates of the shared portion (AND portion) of the dimension measurement location / dimension extraction pattern 1 and the post-processing data 4, the coordinate information of the location where the dimension is measured can be obtained. If the length is extracted, the dimension value after processing can be obtained. At this time, as shown in FIG. 15, the direction of the measurement dimension 3 may be determined to be parallel to the side on the side where the post-processing data in FIG.
[0072]
That is, the dimension measurement information generation method according to Example 1 of the fourth embodiment is a computer-aided method for measuring the dimension of an LSI pattern on a photomask used for manufacturing a semiconductor wafer or a wafer processed using the photomask. When creating dimension measurement information when selecting using a design device, a figure indicating the dimension measurement location is added to the layout data of the LSI, and the measurement position, dimension value, and measurement direction are used using this figure. It is characterized by obtaining.
[0073]
According to Example 1 of the fourth embodiment, the coordinates, method, direction, and the like of a pattern whose dimensions are to be measured can be easily extracted even for a photomask in which graphic processing that is difficult to predict is performed on design data. It becomes possible to do.
[0074]
Here, by further adding information indicating the purpose and application of the measurement to the layout data of the LSI, it is possible to further facilitate the separation of the measurement information.
[0075]
FIG. 16 shows a method for generating dimension measurement information of an LSI pattern on a photomask (or a processed wafer) according to Example 2 of the fourth embodiment of the present invention.
[0076]
When it is necessary to perform measurement in both x and y directions on the design data 2 before processing one pattern, a dimension measurement location / dimension extraction pattern 1 is added to both directions of the design data 2 and each direction is added. Perform dimension extraction for.
[0077]
According to Example 2 of the fourth embodiment, dimension measurement information can be generated in both the x and y directions.
[0078]
<Fifth Embodiment>
FIG. 17 shows a dimension measurement order determination method for LSI patterns on a wafer according to the fifth embodiment of the present invention.
[0079]
As shown in FIG. 17, for each of the measurement locations 1, 2, 3, and 4 of, for example, four LSI chip regions CHIP1 to 4 adjacent to each other, as shown by the arrows in the drawing, The pattern dimensions are measured by sorting the patterns in the order of CHIP1 to CHIP4 (or the reverse order).
[0080]
At this time, when the operator who performs the dimension measurement work on the processed wafer performs dimension measurement while visually comparing the drawing showing the measurement pattern and the pattern to be measured, the portions to be the same pattern to be measured are continuously displayed. Therefore, it can be expected that measurement efficiency is improved and measurement errors are reduced.
[0081]
【The invention's effect】
As described above, according to the LSI pattern dimension measurement location selection method of the present invention, it is possible to select a dimension measurement location from a real pattern inside the chip area in a short time without mistakes and without mistakes. In addition, the dimension measurement location can be selected so as to be uniform within the photomask surface or the processed wafer surface from among a large number of dimension measurement location candidates.
[0082]
According to the LSI pattern dimension measurement information generation method of the present invention, the measurement information for determining the position (coordinate value), measurement dimension, and measurement direction of the dimension measurement part from the measurement part extracted by the DRC function It can be expressed and transmitted only by data output. In addition, for photomasks in which graphic processing that is difficult to predict is performed on design data, it is possible to easily extract the coordinates, method, and direction of a pattern whose dimensions are to be measured.
[0083]
According to the LSI pattern dimension measurement order determination method of the present invention, it becomes possible to continuously view the same measured pattern in a plurality of adjacent chip areas on the processed wafer, and the measurement efficiency is improved. It can be expected to improve and reduce measurement errors.
[Brief description of the drawings]
FIG. 1 is a view for explaining an overall process of an LSI pattern dimension measurement location selection method for a photomask (or a processed wafer) according to a first embodiment of the present invention;
FIG. 2 is a diagram showing an example of a dimension measurement location selection condition file describing dimension measurement location selection conditions in FIG. 1;
FIG. 3 is a diagram showing a specific example of a function for creating a DRC command description for dimension measurement location selection in FIG. 1;
4 is a diagram for explaining a process of selecting a dimension measurement location candidate from a layout pattern when the DRC function in FIG. 1 is executed. FIG.
FIG. 5 is a view showing functions, files, and the like used in a method for selecting a dimension measurement location of an LSI pattern on a photomask (or a processed wafer) according to a second embodiment of the present invention.
6 is a flowchart showing an in-region dimension measurement location determination process in FIG. 5;
7 is a flowchart following FIG. 6 as part of the in-region dimension measurement location determination process in FIG. 5;
8 is a flowchart following FIG. 7 as part of the in-region dimension measurement location determination process in FIG.
FIG. 9 is a view shown for explaining the entire contents of the dimension measurement location selection processing of FIGS. 6 to 8;
FIG. 10 provides measurement information for determining the position, measurement dimension, and measurement direction of a pattern width dimension measurement location in an LSI pattern dimension measurement information generation method on a photomask according to a third embodiment of the present invention; The figure shown in order to demonstrate the process to do.
FIG. 11 is a diagram for explaining processing for providing measurement information for determining a dimension measurement position of a pattern interval in a method for generating dimension measurement information of an LSI pattern on a photomask according to a third embodiment of the present invention; Figure.
12 is a view for explaining graphic information output by the dimension measurement information generation method shown in FIGS. 10 and 11. FIG.
13 is a diagram showing a specific example for creating a pattern to be added in the dimension measurement information generating method shown in FIGS. 10 and 11. FIG.
FIG. 14 is a view for explaining a method for generating dimension measurement information of an LSI pattern on a photomask according to Example 1 of the fourth embodiment of the present invention;
FIG. 15 is a diagram illustrating a process of extracting the length of the shared portion between the dimension measurement location / dimension extraction pattern 1 and the processed data 4 in the processing of FIG. 14 to obtain a processed dimension value; The figure shown in order to demonstrate a mode that the direction parallel to the edge | side where the data 4 exists is judged as the direction of the measurement dimension 3. FIG.
FIG. 16 is a view for explaining a method for generating dimension measurement information of an LSI pattern on a photomask according to Example 2 of the fourth embodiment of the present invention;
FIG. 17 is a view for explaining a method for determining the dimension measurement order of LSI patterns on a processed wafer according to the fifth embodiment of the present invention;
FIG. 18 is a view for explaining a conventional example of an order of measuring pattern dimensions on a processed wafer.
[Explanation of symbols]
10 ... Dimension measurement location selection condition file,
11 ... DRC command description creation function for dimension measurement location selection,
12 ... DRC command description file,
13: LSI layout pattern data file,
14 ... DRC function,
15 ... Dimension measurement location candidate file,
16 ... number-limited function,
17 ... Dimension measurement location file.

Claims (3)

Using a computer-aided design device, extract a dimensional measurement location candidate of a pattern of an LSI chip area on a wafer processed using a photomask or LSI from the layout data of the LSI, and select a dimensional measurement location therefrom When
Using at least means for obtaining the number of dimension measurement points to be selected and means for obtaining rectangular region coordinate values defining the chip region of the photomask or post-processing wafer;
Based on the rectangular area coordinate value and the number of dimension measurement points assigned to the area, the area is divided into two equal parts so that the size in the x direction is equal. A first step of distributing the number of dimension measurement points;
Based on the rectangular area coordinate value and the number of dimension measurement points assigned to the area, the area is divided into two equal parts so that the y-direction size is equal. A second step of distributing the number of dimension measurement points,
In the first step and the second step, when the number of dimension measurement points in a certain area is 1, an arbitrary dimension measurement point candidate in the area is selected as a dimension measurement point, and the number of dimension measurement points in a certain area is A method for selecting a dimension measurement location of an LSI pattern, wherein the second step or the first step is applied to the area and the number of dimension measurement points assigned to the area when the number is two or more. Wherein any size measurement point candidate, dimension measuring point selection method of LSI patterns of claim 1, wherein the dimension measurement points is dimensioned measurement point candidate existing in the closest to the center point of the region is 1 . In the first step and the second step, when the number of dimension measurement point candidates existing in the rectangular area coordinate value is equal to or less than the number of dimension measurement points assigned to the area, the dimension area is present in the rectangular area. 3. The LSI pattern dimension measurement location selection method according to claim 1, wherein all dimension measurement location candidates are selected as dimension measurement locations.

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