JP4069417B2 - Surface treatment apparatus and surface treatment method - Google Patents

Description

[0001]
BACKGROUND OF THE INVENTION
The present invention relates to a surface treatment apparatus and a surface treatment method for treating the surface of an object to be treated (also referred to as a workpiece) by performing plasma discharge under atmospheric pressure or a pressure near atmospheric pressure.
[0002]
[Prior art]
There has been proposed an apparatus for performing a surface treatment on an object to be processed using plasma discharge under atmospheric pressure or a pressure near atmospheric pressure. The advantage of surface treatment by plasma discharge under atmospheric pressure or near atmospheric pressure is that it does not require equipment for formation and control in a low-pressure atmosphere compared to plasma discharge under vacuum, and can be used for large-area treatment. It is easy to realize and reduce manufacturing costs.
[0003]
Such a surface treatment apparatus using plasma generates a plasma discharge generation part (also referred to as a discharge region) generated under a pressure near atmospheric pressure between a pair of electrodes. A gas is introduced from one electrode through the vent hole. This gas enters the plasma discharge generating part through the porous body after passing through the vent hole. By doing in this way, a uniform surface treatment can be given to a processed object (for example, refer to patent documents 1).
[0004]
[Patent Document 1]
JP-A-6-2149 (first page, FIG. 1)
[0005]
[Problems to be solved by the invention]
However, such a conventional plasma surface treatment apparatus has the following problems.
A conventional plasma surface treatment apparatus used under atmospheric pressure forms one discharge generating portion between a pair of electrodes. And this one discharge generation part activates the reactive gas (also called process gas) required for one kind of process, and performs a desired surface treatment with respect to a to-be-processed object.
With such a structure, when it is necessary to process using another type of reaction gas, the surface treatment operation is performed by switching the gas type from one type of reaction gas already used to another type of reaction gas. There is a need to do.
[0006]
When a plurality of types of surface treatments are continuously performed on the object to be processed by switching the gas types in this way, it takes time to switch the gas types as described above, and the surface treatment work time is considerable. It takes a long time.
Moreover, since the conventional plasma processing apparatus has only one discharge generation part, it cannot expose to the discharge generation part in multiple times with respect to the surface of one to-be-processed object.
[0007]
Therefore, the present invention solves the above problems and forms a plurality of discharge generating portions between a pair of application-side electrode portions and a ground-side electrode portion, whereby a plurality of types of gas species are used for one object to be processed. An object of the present invention is to provide a surface treatment apparatus and a surface treatment method capable of performing various types of surface treatments on a single object to be treated.
[0008]
[Means for Solving the Problems]
  The surface treatment apparatus of the present invention treats the surface of an object to be processed by performing plasma discharge under an atmospheric pressure or a pressure in the vicinity of atmospheric pressure between an application-side electrode portion and a ground-side electrode portion arranged to face each other. A plurality of dielectrics are arranged between the application-side electrode unit and the ground-side electrode unit, and each of the dielectrics has a gas flow path for flowing a reaction gas. And a discharge generating portion of the plasma discharge that activates the reaction gas to reach the surface of the object to be moved is formed in the flow path.The dielectrics are arranged along the moving direction of the object to be processed, and each dielectric is provided with a gas supply unit for supplying a different kind of reaction gas, and the object to be processed. And a moving operation unit that moves the table along the arrangement direction of the plurality of dielectrics while facing the surface of the object to be processed to each of the dielectrics.It is characterized by that.
[0009]
In the present invention, a plurality of dielectrics are arranged between the application side electrode portion and the ground side electrode portion. Each dielectric has a gas flow path for allowing the reaction gas to pass therethrough. In this flow path, a discharge generation part of plasma discharge for activating the reaction gas is formed. The discharge generator causes the activated reaction gas to reach the surface of the moving object.
Thereby, by supplying different reaction gases to the plurality of dielectrics, if the object to be processed is moved, surface treatment of a plurality of types of gases on the surface of the object to be processed is performed on the application side electrode portion and the ground side. This can be reliably performed between the electrode portions.
[0011]
According to such a configuration, the dielectrics are arranged along the moving direction of the object to be processed. The gas supply unit supplies different types of reaction gases to the dielectrics.
The table is equipped with an object to be processed. The moving operation unit is configured to move along the arrangement direction of the plurality of dielectrics on the table while facing each dielectric on the surface of the object to be processed.
As a result, the object to be processed on the table can be subjected to a plurality of types of surface treatment while moving so as to face each dielectric by operating the movement operation unit.
[0012]
In the above-described configuration, it is desirable that the cross-sectional shape of the gas flow path of each dielectric material is different in the cross-sectional shape in a direction orthogonal to the direction in which the reaction gas flows.
According to such a configuration, the cross-sectional shape of the gas flow path of each dielectric is different in the cross-sectional shape in the direction orthogonal to the direction in which the reaction gas flows. Thereby, the flow volume which flows according to the kind of reaction gas can be changed because cross-sectional shapes differ.
[0013]
In the above configuration, the application-side electrode portion includes a first electrode and a second electrode parallel to the first electrode, and the ground-side electrode portion is disposed in parallel between the first electrode and the second electrode. A plurality of first dielectrics are arranged between the first electrode and the ground side electrode part, and a plurality of second dielectrics are arranged between the second electrode and the ground side electrode part. The cross-sectional shape of the gas flow path of the first dielectric is different from the cross-sectional shape of the gas flow path of the second dielectric, and the type of the reaction gas flowing in the gas flow path of the first dielectric It is desirable that the types of the reaction gas flowing in the gas flow path of the second dielectric are different.
[0014]
According to such a configuration, the ground-side electrode portion is arranged so as to be parallel between the first electrode and the second electrode of the application-side electrode portion. A plurality of dielectrics are arranged between the first electrode and the ground side electrode part, and a plurality of second dielectrics are arranged between the second electrode and the ground side electrode part. The first dielectric and the second dielectric have different cross-sectional shapes. The type of reaction gas flowing through the gas flow path of the first dielectric is different from the type of reaction gas flowing through the gas flow path of the second dielectric.
By doing in this way, the surface of the to-be-processed object can be surface-treated with a different kind of reactive gas.
[0015]
  The surface treatment method of the present invention treats the surface of an object to be processed by performing plasma discharge under an atmospheric pressure or a pressure in the vicinity of atmospheric pressure between an application-side electrode portion and a ground-side electrode portion arranged to face each other. A plurality of dielectrics arranged between the application-side electrode portion and the ground-side electrode portion, each having a gas flow path for flowing a reaction gas, A discharge generation portion of the plasma discharge is formed to activate the reaction gas and reach the surface of the moving object to be processed.The dielectrics are arranged along the moving direction of the object to be processed, and the dielectrics are supplied with different types of reaction gases from a gas supply unit, and are mounted on the table. The body is moved along the arrangement direction of the plurality of dielectrics while the surface of the object to be processed faces each of the dielectrics by the operation of the movement operation unit.It is characterized by that.
[0016]
In the present invention, a plurality of dielectrics are arranged between the application side electrode portion and the ground side electrode portion. Each dielectric has a gas flow path for allowing the reaction gas to pass therethrough. In this flow path, a discharge generation part of plasma discharge for activating the reaction gas is formed. The discharge generator causes the activated reaction gas to reach the surface of the moving object.
Thereby, by supplying different reaction gases to the plurality of dielectrics, if the object to be processed is moved, surface treatment of a plurality of types of gases on the surface of the object to be processed is performed on the application side electrode portion and the ground side. This can be reliably performed between the electrode portions.
[0018]
According to such a configuration, the dielectrics are arranged along the moving direction of the object to be processed. The gas supply unit supplies different types of reaction gases to the dielectrics.
The table is equipped with an object to be processed. The moving operation unit is configured to move along the arrangement direction of the plurality of dielectrics on the table while facing each dielectric on the surface of the object to be processed.
As a result, the object to be processed on the table can be subjected to a plurality of types of surface treatment while moving so as to face each dielectric by operating the movement operation unit.
[0019]
In the above-described configuration, it is desirable that the cross-sectional shape of the gas flow path of each dielectric material is different in the cross-sectional shape in a direction orthogonal to the direction in which the reaction gas flows.
According to such a configuration, the cross-sectional shape of the gas flow path of each dielectric is different in the cross-sectional shape in the direction orthogonal to the direction in which the reaction gas flows.
Thereby, the flow volume which flows according to the kind of reaction gas can be changed because cross-sectional shapes differ.
[0020]
In the above configuration, the application-side electrode portion includes a first electrode and a second electrode parallel to the first electrode, and the ground-side electrode portion is disposed in parallel between the first electrode and the second electrode. A plurality of first dielectrics are arranged between the first electrode and the ground side electrode part, and a plurality of second dielectrics are arranged between the second electrode and the ground side electrode part. The cross-sectional shape of the gas flow path of the first dielectric is different from the cross-sectional shape of the gas flow path of the second dielectric, and the type of the reaction gas flowing in the gas flow path of the first dielectric It is desirable that the types of the reaction gas flowing in the gas flow path of the second dielectric are different.
[0021]
According to such a configuration, the ground-side electrode portion is arranged so as to be parallel between the first electrode and the second electrode of the application-side electrode portion. A plurality of dielectrics are arranged between the first electrode and the ground side electrode part, and a plurality of second dielectrics are arranged between the second electrode and the ground side electrode part. The first dielectric and the second dielectric have different cross-sectional shapes. The type of reaction gas flowing through the gas flow path of the first dielectric is different from the type of reaction gas flowing through the gas flow path of the second dielectric.
By doing in this way, the surface of the to-be-processed object can be surface-treated with a different kind of reactive gas.
[0022]
DETAILED DESCRIPTION OF THE INVENTION
DESCRIPTION OF EXEMPLARY EMBODIMENTS Hereinafter, preferred embodiments of the invention will be described with reference to the drawings.
First embodiment
1 to 3 show a first preferred embodiment of the surface treatment apparatus of the present invention.
FIG. 1 is a plan view of the surface treatment apparatus 10, and FIG. 2 is a view having a cross section taken along the line AA of the surface treatment apparatus 10 of FIG. FIG. 3 is a flowchart showing an example of a surface treatment method performed using the surface treatment apparatus 10.
[0023]
The surface treatment apparatus 10 in FIGS. 1 and 2 is also called an atmospheric pressure plasma surface treatment apparatus.
The surface treatment apparatus 10 is an apparatus that can perform surface treatment on a surface of an object to be processed continuously or simultaneously using a plurality of discharge generators by plasma discharge under atmospheric pressure or a pressure near atmospheric pressure. The surface treatment apparatus 10 is an apparatus that continuously performs the surface treatment of the object to be processed 70 using a plurality of types of reaction gases.
[0024]
The surface treatment used in the embodiment of the present invention includes surface modification such as ashing, etching, hydrophilic treatment and water repellent treatment, cleaning, film formation and the like. The ashing process is a process for removing organic substances on the surface of an object to be processed such as a glass substrate. The etching process is a process for removing a film formed on the surface of an object to be processed such as a glass substrate. A hydrophilic process is a process which forms a hydrophilic film | membrane on the surface of to-be-processed objects, such as a glass substrate, for example. The water repellent treatment is a treatment for forming a water repellent film on the surface of a target object such as a glass substrate.
The kind of plasma generated in the surface treatment apparatus 10 is glow discharge plasma generated under atmospheric pressure or a pressure near atmospheric pressure. This glow discharge plasma is generated with the occurrence of glow discharge in the plasma generating gas.
[0025]
1 and 2 includes an application-side electrode unit 20, an earth-side electrode unit 30, a plurality of gas supply units 21, 22, 23, and 24, a high-frequency AC power source (also referred to as an RF power source) 23, a transport A table 31, a moving operation unit 25, dielectrics 41, 42, 43, 44 and a control unit 100 are provided.
The application-side electrode unit 20 and the ground-side electrode unit 30 form a so-called parallel plate type plasma discharge device. The application side electrode unit 20 and the ground side electrode unit 30 are arranged in parallel with a gap therebetween.
As described above, the surface treatment apparatus 10 has a pair of the application-side electrode unit 20 and the ground-side electrode unit 30 and constitutes a so-called one direct discharge type discharge means.
[0026]
The application-side electrode unit 20 illustrated in FIG. 1 is electrically connected to the power source 23. The application-side electrode unit 20 is supplied with high-frequency AC power from a power source 23. The application-side electrode unit 20 is made of a highly conductive material that can serve as an electrode, such as aluminum, copper, stainless steel (SUS), titanium, tungsten, or the like.
The ground side electrode part 30 shown in FIG. 1 is arranged in parallel with a gap facing the application side electrode part 20 as described above, and the application side electrode part 20 and the ground side electrode part 30 are the same as FIG. They are provided in parallel along the Z direction shown in FIG. The ground side electrode unit 30 is grounded. The material of the ground side electrode part 30 can be the same as that of the application side electrode part 20.
[0027]
Next, the plurality of dielectrics 41 to 44 shown in FIGS. 1 and 2 will be described.
The dielectrics 41 to 44 are arranged in the T direction, for example, at the same interval between the application-side electrode unit 20 and the ground-side electrode unit 30. The dielectrics 41 to 44 are made of, for example, ceramics such as alumina and silicon nitride, or glass such as quartz. The dielectrics 41 to 44 define the generation area of the discharge generation portion so that unnecessary discharge does not occur in other portions.
[0028]
In the first embodiment shown in FIGS. 1 and 2, the dielectrics 41 to 44 are formed as cylindrical members. The diameters and inner diameters of the dielectrics 41 to 44 are set to be the same, for example. Gas flow paths 91 to 94 are formed in the dielectrics 41 to 44, respectively. The gas flow paths 91 to 94 can supply mixed gas from the gas supply units 21 to 24, respectively.
[0029]
When the power source 23 supplies power to the application-side electrode unit 20, the discharge generation units 101 to 104 can be formed in the gas flow paths 91 to 94 of the dielectrics 41 to 44, respectively. These discharge generators 101 to 104 activate the reaction gas of the mixed gas supplied to the gas flow paths 91 to 94 to reach the surface 71 of the moving object 70 to be moved.
The gas outlets 121 to 124 of the dielectrics 41 to 44 are positioned downward so as to face the surface 71 side of the object 70 to be processed.
[0030]
The types of mixed gas that can be supplied by the gas supply unit 21 to the gas supply unit 24 are different types of mixed gas in the embodiment of FIGS.
For example, the gas supply unit 21 contains a mixed gas for performing an ashing process on the surface 71 of the workpiece 70. For this purpose, the gas supply unit 21 employs He as a carrier gas for ashing treatment, and O as a reaction gas.₂Is adopted.
The gas supply unit 22 contains, for example, a mixed gas for performing an etching process on the surface 71 of the workpiece 70, He is used as a carrier gas, and O is used as a reaction gas.₂, CF₄Is adopted.
[0031]
The gas supply unit 23 contains a mixed gas for performing a hydrophilic treatment on the surface 71 of the workpiece 70, adopts He as a carrier gas, and O as a reactive gas.₂Can be adopted. The gas supply unit 24 accommodates, for example, a mixed gas for performing a water repellent treatment on the surface 71 of the workpiece 70, uses He as a carrier gas, and CF as a reaction gas.₄Is adopted.
[0032]
Next, the transfer table 31 shown in FIG. 2 is movable in the T direction along the guide rail 80 by the operation of the movement operation unit 25. On the mounting surface 31 </ b> A of the transfer table 31, the workpiece 70 is detachably placed.
The operation of the movement operation unit 25 is controlled by the control unit 100. The gas supply operation of the gas supply units 21 to 24 is controlled by the control unit 100. The operation of the power supply is controlled by the control unit 100.
The object 70 is a flat member, such as a silicon substrate or a glass substrate used for a liquid crystal display (LCD).
[0033]
Next, an example of a surface treatment method for performing a surface treatment on the surface 71 of the object 70 using the surface treatment apparatus 10 shown in FIGS. 1 and 2 will be described with reference to FIG. .
In the processing object arrangement step ST1 of FIG. 3, the processing object 70 is mounted on the mounting surface 31A of the transfer table 31 shown in FIG. The transport table 31 can transport along the guide rail 80 in a state where the workpiece 70 is placed along the T direction. The T direction is a direction orthogonal to the Z direction. Moreover, the T direction is an arrangement direction of the dielectrics 41 to 44. The dielectrics 41 to 44 are arranged in series between the application-side electrode unit 20 and the ground-side electrode unit 30 at intervals.
[0034]
Next, the process proceeds to the discharge generation step ST2 in FIG.
In step ST <b> 2, the power source 23 illustrated in FIG. 1 supplies high-frequency AC power to the application-side electrode unit 20. As a result, the plurality of dielectrics 41 to 44 generate plasma discharge discharge generators 101 to 104 in the gas flow paths 91 to 94, respectively.
In this state, the gas supply unit 21 to the gas supply unit 24 sequentially supply the mixed gas to the gas flow paths 91 to 94, respectively.
[0035]
The timing at which the gas supply unit 21 to the gas supply unit 24 supply the mixed gas to the gas flow paths 91 to 94, respectively, is performed according to the situation in which the object 70 is conveyed in the T1 direction by the conveyance table 31. .
When the transfer table 31 and the workpiece 70 start to be transferred in the T1 direction, the gas supply unit 21 supplies the mixed gas to the gas flow path 91. Thereby, in the discharge generation part 101, atmospheric pressure plasma is produced | generated and the excited active species of a reactive gas is produced. This excited active species performs, for example, an ashing process on the surface of the object to be processed 70.
[0036]
Next, when the gas supply unit 22 supplies the mixed gas to the gas flow path 92, atmospheric pressure plasma is generated in the discharge generation unit to generate excited active species of the reaction gas. The excited active species etches the surface 71 of the workpiece 70, for example.
When the gas supply unit 23 supplies the mixed gas to the gas flow path 93, atmospheric discharge plasma is generated in the discharge generation unit 103 to generate excited active species of the reaction gas. This excited active species performs, for example, a hydrophilic treatment on the surface 71 of the workpiece 70.
[0037]
When the gas supply unit 24 supplies the mixed gas to the gas flow path 94, atmospheric discharge plasma is generated in the discharge generation unit 104 to generate excited active species of the reaction gas. This excited active species performs, for example, a water repellent treatment on the surface 71 of the object 70.
In this way, the surface 71 of the object to be processed can be subjected to surface treatment by a plurality of types of process treatments continuously or substantially simultaneously with a plurality of types of reaction gases while moving in the T direction.
[0038]
The surface treatment apparatus 10 of the present invention does not need to be provided with a plurality of types of apparatuses in order to perform a plurality of types of treatments, and a plurality of types of treatments can be performed by arranging one surface treatment apparatus 10. Since only one surface treatment apparatus 10 is provided, it is possible to reduce the area where the apparatus is arranged and the cost of the apparatus. In addition, since it is not necessary to arrange a plurality of devices side by side, a transport unit for transporting the object to be processed between the plurality of devices is completely unnecessary.
In addition, since a plurality of types of process processing can be performed almost simultaneously or continuously on the surface 71 of one object 70, the influence of changes over time between a plurality of different processing can be reduced.
[0039]
Second embodiment
4 and 5 show a second embodiment of the surface treatment apparatus of the present invention.
4 is a plan view of the surface treatment apparatus 110, and FIG. 5 is a view having a cross section taken along line BB of the surface treatment apparatus 110 of FIG.
When the constituent elements of the surface treatment apparatus 110 shown in FIG. 4 are the same as the constituent elements of the surface treatment apparatus 10 shown in FIGS.
[0040]
A dielectric 141 and another dielectric 142 are disposed between the application-side electrode unit 20 and the ground-side electrode unit 30. The dielectric 141 and the dielectric 142 are arranged side by side in the T direction in FIG.
The dielectric 141 and the dielectric 142 have different cross-sectional shapes. The dielectric 142 is a cylindrical member, for example, and has a circular gas flow path 192.
[0041]
On the other hand, the gas flow path 191 of the dielectric 141 has, for example, a rectangular cross-sectional shape. Moreover, the cross-sectional area of the gas channel 191 is set larger than the cross-sectional area of the gas channel 192. The cross-sectional shapes of the gas flow path 191 and the gas flow path 192 are cross sections in a direction perpendicular to the direction Z1 in which the mixed gas flows in the gas flow paths 191 and 192.
[0042]
The gas supply unit 121 supplies a mixed gas to the gas flow path 191. The other gas supply unit 122 supplies another type of mixed gas to the gas flow path 192.
In this way, the respective gas flow paths 191 and 192 of the dielectrics 141 and 142 supply different types of mixed gases.
[0043]
The gas supply unit 121 supplies, for example, a mixed gas for performing a hydrophilic treatment on the surface 71 of the workpiece 70. The gas supply unit 122 supplies a mixed gas for performing a water repellent process on the surface 71 of the object 70.
In the gas flow path 191 of the dielectric 141, a discharge generator 201 is formed as shown in FIG. Similarly, a discharge generator 202 is generated in the gas flow path 192 of the dielectric 142.
As described above, the sectional shape of the gas channel 191 and the sectional shape of the gas channel 192 are different, and the sectional area of the gas channel 191 is larger than the sectional area of the gas channel 192. This is because the amount (flow rate) of the mixed gas used is changed in accordance with the type of the mixed gas.
[0044]
Next, an example in which surface treatment is performed by the surface treatment apparatus 110 of FIGS. 4 and 5 will be described.
When the power supply 23 in FIG. 4 supplies power to the application-side electrode unit 20, the discharge generation units 201 and 202 are generated in the gas channel 191 and the gas channel 192, respectively.
When the transport table 30 transports the workpiece 70 in the T1 direction, the gas supply unit 121 supplies the mixed gas to the gas flow path 191. Thereby, in the discharge generation part 201, atmospheric pressure plasma is produced | generated and the excited active species of a reactive gas is produced. This excited active species performs, for example, a hydrophilic treatment on the surface of the object 70.
Subsequently, when the object 70 is advanced in the T1 direction by the transfer table 30, the gas supply unit 122 supplies the mixed gas to the discharge generation unit 202. As a result, atmospheric pressure plasma is generated in the discharge generator 202, and excited reactive species of the reaction gas are generated. This excited active species performs, for example, a water repellent treatment on the surface 71 of the object 70.
[0045]
Third embodiment
6 and 7 show a third embodiment of the surface treatment apparatus of the present invention.
Components of the surface treatment apparatus 210 shown in FIGS. 6 and 7 that are the same as those of the surface treatment apparatus 10 of FIG.
In FIG. 6 and FIG. 7, the application-side electrode section 320 has a first electrode 321 and a second electrode 322. Between the first electrode 321 and the second electrode 322, the ground side electrode portion 330 is arranged in parallel.
[0046]
The first electrode 321, the second electrode 322, and the ground-side electrode portion 330 are each a plate-like member, and are arranged in the T direction in parallel.
The first electrode 321 and the second electrode 322 are supplied with power by the power source 23. The ground side electrode portion 330 is grounded. The power source 23 is also grounded.
A plurality of dielectrics 41 to 45 are arranged in series between the first electrode 321 and the ground-side electrode unit 330 with an interval therebetween. Similarly, a plurality of dielectrics 441 to 444 are also arranged in series at intervals between the second electrode 322 and the ground side electrode portion 330.
[0047]
The dielectrics 41 to 45 are, for example, cylindrical members, and circular gas flow paths 91 to 95 are formed therein, respectively. For example, rectangular or square gas flow paths 491 to 494 are formed in the dielectrics 441 to 444, respectively. The gas channels 491 to 494 have the same size, and the gas channels 91 to 95 have the same size. The cross-sectional areas of the gas flow paths 491 to 494 are set larger than the cross-sectional areas of the gas flow paths 91 to 95.
[0048]
7 is a cross-sectional view taken along the line CC in FIG. FIG. 8 is a view having a cross section taken along line DD in FIG.
As shown in FIG. 7, discharge generators 101 to 105 are generated in the gas flow paths 91 to 95, respectively. Similarly, as shown in FIG. 8, discharge generating portions 201 to 204 are also generated in the gas flow paths 491 to 494 of the dielectrics 441 to 444, respectively. The transfer table 430 is mounted with the object 70 to be detached. The transfer table 430 is moved in the T direction along the guide rail 80 by the operation of the movement operation unit 25, so that the surface 71 of the object 70 is positioned to a position facing the dielectrics 41 to 45 and 441 to 44. be able to.
[0049]
The third embodiment shown in FIGS. 6 to 7 is particularly characteristic in the following points.
The same kind of mixed gas is supplied from the gas supply unit 401 to the gas flow paths 91 to 95 of the dielectrics 41 to 45 shown in FIGS. 6 and 7. This mixed gas is, for example, a mixed gas for performing a hydrophilic treatment on the surface 71 of the workpiece 70.
In contrast, another type of mixed gas is supplied from the gas supply unit 403 to the gas flow paths 491 to 494 of the dielectrics 441 to 444 shown in FIGS. As the kind of the mixed gas, for example, a mixed gas for performing a water repellent treatment on the surface 71 of the workpiece 70 is used.
[0050]
The surface 71 of the workpiece 70 is positioned at a position facing the plurality of dielectrics 41 to 45 and the plurality of dielectrics 441 to 444 as shown in FIGS. 7 and 8. Then, the power supply 23 shown in FIG. 6 supplies power to the first electrode 321 and the second electrode 322, so that the discharge generators 101 to 105 are provided in the gas flow paths 91 to 95 of the dielectrics 41 to 45 shown in FIG. Are formed respectively. Similarly, as shown in FIG. 8, discharge generators 201 to 204 are formed in the gas flow paths 491 to 494 of the dielectrics 441 to 444, respectively.
[0051]
The gas supply unit 401 supplies the mixed gas to the gas flow paths 91 to 95, and the other gas supply unit 403 supplies the mixed gas to the gas flow paths 491 to 494, respectively. As a result, the surface 71 of the object 70 can be simultaneously subjected to hydrophilic treatment and water repellent treatment over the entire surface.
For example, in the region of the surface 71 of the object 70 to be processed, the region that faces the dielectrics 41 to 45 is subjected to hydrophilic treatment, and the region of the surface 71 that faces the dielectrics 441 to 444 is treated with water repellency. Processing can be performed.
The surface 71 can be subjected to hydrophilic treatment and water repellent treatment at the same time. In this case, even if the area to be processed on the surface 71 of the workpiece 70 is large, the processing can be performed continuously or simultaneously using a plurality of process reaction gases.
[0052]
Employing the structure of the surface treatment apparatus of the present invention has the following advantages.
When a process is performed using a plurality of different process gases, the process can be performed by the pair of the application side electrode unit 20 and the ground side electrode unit 30. Therefore, unlike the conventional case, the number of surface treatment devices is only one, and a plurality of treatments can be performed by using one surface treatment device, so that the number of devices can be reduced.
[0053]
Moreover, since the number of devices can be reduced, the installation area occupied by the devices can be reduced, and the device cost can be reduced.
Moreover, the conveyance part for conveying a to-be-processed object between several different apparatuses conventionally required becomes unnecessary.
Since the surface treatment apparatus of the present invention can perform a plurality of process treatments simultaneously or continuously on the surface 71 of the workpiece 70, the treatment rate can be improved and the influence of changes over time of the treatment can be reduced. it can.
[0054]
The surface treatment apparatus of the present invention is a parallel plate type plasma treatment apparatus as described above. The surface treatment apparatus of the present invention uses plasma discharge under atmospheric pressure or a pressure near atmospheric pressure, and can perform a plurality of surface treatments such as surface modification and etching continuously or simultaneously. The surface treatment includes ashing, etching, surface modification such as hydrophilic treatment and water repellent treatment, cleaning, and film formation.
[0055]
In the embodiment of the present invention, for example, He is used as the carrier gas. For water repellent treatment, for example, He + CF₄As a hydrophilic treatment, He + O can be used.₂The mixed gas can be used.
In the embodiment of the present invention, various types of objects to be processed can be adopted depending on the processing purpose. The object to be processed is, for example, an electronic component such as a packaged IC, a silicon substrate, a glass substrate used for a liquid crystal display (LCD), or a plastic plate.
The present invention is not limited to the above embodiment, and various modifications can be made without departing from the scope of the claims.
A part of each configuration of the above embodiment can be omitted, or can be arbitrarily combined so as to be different from the above.
[Brief description of the drawings]
FIG. 1 is a plan view showing a first embodiment of a surface treatment apparatus of the present invention.
FIG. 2 is a side view having a cross section taken along line AA in the surface treatment apparatus of FIG. 1;
3 is a flowchart showing an example of a surface treatment method performed by the surface treatment apparatus of FIG.
FIG. 4 is a plan view showing a second embodiment of the surface treatment apparatus of the present invention.
5 is a side view having a cross section taken along line BB in the surface treatment apparatus of FIG. 4;
FIG. 6 is a plan view showing a third embodiment of the surface treatment apparatus of the present invention.
7 is a side view having a cross section taken along a line CC in the surface treatment apparatus of FIG. 6;
8 is a side view having a cross section taken along a line DD in the surface treatment apparatus of FIG. 6;
[Explanation of symbols]
DESCRIPTION OF SYMBOLS 10 ... Surface treatment apparatus, 20 ... Application side electrode part, 21 thru | or 24 ... Gas supply part, 23 ... Power supply, 25 ... Moving operation part, 30 ... Ground side electrode part, 31 ... conveying table, 41 to 44 ... dielectric, 70 ... object to be processed, 71 ... surface of object to be processed, 91 to 94 ... gas flow path, 101 to 104 ... Discharge generation part, T ... direction of movement of workpiece

Claims (6)

A surface treatment apparatus for treating the surface of an object to be treated by plasma discharge under atmospheric pressure or a pressure in the vicinity of atmospheric pressure between an application-side electrode portion and a ground-side electrode portion arranged to face each other,
A plurality of dielectrics are arranged between the application side electrode part and the ground side electrode part,
Each of the dielectrics has a gas flow path for flowing a reactive gas, and the discharge of the plasma discharge that activates the reactive gas and reaches the surface of the moving object to be processed in the flow path. Ri configuration der generation unit is formed,
Each of the dielectrics is arranged along a moving direction of the object to be processed, and a gas supply unit that supplies a different kind of reactive gas to each of the dielectrics,
A table on which the object is mounted;
The surface treatment apparatus according to claim Rukoto a movement operating portion for moving along the arrangement direction of the plurality of the dielectric to the table while the surface of the object is faced to each of said dielectric. 2. The surface treatment according to claim 1, wherein a cross-sectional shape of the gas flow path of each of the dielectrics is different from each other in a direction orthogonal to a direction in which the reaction gas flows. apparatus. The application side electrode portion has a first electrode and a second electrode parallel to the first electrode, and the ground side electrode portion is arranged in parallel between the first electrode and the second electrode,
A plurality of first dielectrics are arranged between the first electrode and the ground side electrode part, and a plurality of second dielectrics are arranged between the second electrode and the ground side electrode part,
The cross-sectional shape of the gas flow path of the first dielectric is different from the cross-sectional shape of the gas flow path of the second dielectric, the type of the reaction gas flowing in the gas flow path of the first dielectric, The surface treatment apparatus according to claim 1, wherein the types of the reaction gases flowing in the gas flow path of the second dielectric are different. It is a surface treatment method for treating the surface of an object to be treated by performing plasma discharge under atmospheric pressure or a pressure in the vicinity of atmospheric pressure between an application-side electrode portion and a ground-side electrode portion arranged to face each other,
The plurality of dielectrics arranged between the application-side electrode portion and the ground-side electrode portion each have a gas flow path for flowing a reaction gas, and the reaction gas is activated in the flow path. A discharge generation part of the plasma discharge is formed to reach the surface of the object to be moved,
Each of the dielectrics is arranged along a moving direction of the object to be processed, and each of the dielectrics is supplied with a different type of reactive gas from a gas supply unit,
The object to be processed mounted on the table is moved along the arrangement direction of the plurality of dielectrics while the surface of the object to be processed faces each dielectric by the operation of the movement operation unit. A surface treatment method characterized by comprising. 5. The surface treatment according to claim 4, wherein the cross-sectional shapes of the gas flow paths of the dielectrics are different from each other in a direction orthogonal to a direction in which the reaction gas flows. Method. The application side electrode portion has a first electrode and a second electrode parallel to the first electrode, and the ground side electrode portion is arranged in parallel between the first electrode and the second electrode,
A plurality of first dielectrics are arranged between the first electrode and the ground side electrode part, and a plurality of second dielectrics are arranged between the second electrode and the ground side electrode part,
The cross-sectional shape of the gas flow path of the first dielectric is different from the cross-sectional shape of the gas flow path of the second dielectric, the type of the reaction gas flowing in the gas flow path of the first dielectric, The surface treatment method according to claim 4, wherein the type of the reaction gas flowing through the gas flow path of the second dielectric is different.

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