JP4063605B2

JP4063605B2 - Application processing equipment

Info

Publication number: JP4063605B2
Application number: JP2002208663A
Authority: JP
Inventors: 修二加藤
Original assignee: Tokyo Electron Ltd
Current assignee: Tokyo Electron Ltd
Priority date: 2002-07-17
Filing date: 2002-07-17
Publication date: 2008-03-19
Anticipated expiration: 2022-07-17
Also published as: JP2004055685A

Description

【０００１】
【発明の属する技術分野】
本発明は，基板の塗布処理装置に関する。
【０００２】
【従来の技術】
半導体デバイスの製造工程において，例えばＳＯＤ（Spin on Dielectric）膜形成システムにより層間絶縁膜を形成している。このＳＯＤ膜形成システムでは，半導体ウェハ（以下，ウェハ）上に塗布液をスピンコートし，当該ウェハに加熱処理等の物理的処理や化学的処理を施して層間絶縁膜を形成している。
【０００３】
上述のスピンコートは，ＳＯＤ膜形成システムに搭載された塗布処理装置において行われ，塗布処理装置は，例えばウェハを保持し回転させるスピンチャックや，ウェハの中心部の上方まで移動しウェハに塗布液を吐出するノズル等を備えている。塗布液には，例えば有機溶媒にて稀釈された絶縁膜材料が用いられる。そして，スピンコートでは，例えばノズルからウェハの中心部に所定量の塗布液が吐出される。その後ウェハが回転され，その遠心力によってウェハ中心部の塗布液が外周部側に広げられ，塗布液がウェハ全面に塗布される。この塗布液の広がりによって，ウェハ上に後に層間絶縁膜となる塗布膜が形成されていた。
【０００４】
【発明が解決しようとする課題】
ところで，近年，生産効率の向上等を図るため，ウェハの大口径化が図られている。このような大口径のウェハの場合に，従来と同じようなスピンコートを行うと，ウェハの中心部に塗布された塗布液がより広範囲に渡って広げられることになる。この結果，ウェハ上の塗布膜に，ウェハ中心部から外周部に向かう放射状の模様が現れて，ウェハ上に塗布斑が形成される。また，ウェハが大口径の場合，ウェハ中心部と外周部との周速度の差が大きくなるので，例えばウェハＷ中心部と外周部での溶剤の揮発量が相違し，ウェハの中心部側と外周部側とで形成される塗布膜の膜厚が大きく異なってくる。また，外周部の周速度が高速になり，風きりによる膜斑が生じる。このような塗布斑や膜厚の不均一性は，製品不良を招くものであり，好ましくない。
【０００５】
一方，塗布斑ができないように，多量の塗布液をウェハの中心部に吐出すると，ウェハから飛散される塗布液の量も多くなり，高価な塗布液の消費量が増大し，コストが増大する。
【０００６】
本発明は，かかる点に鑑みてなされたものであり，口径の大きなウェハ等の基板に対しても，斑なく，均一に塗布液を塗布できる塗布処理装置を提供することその目的とする。
【０００７】
【課題を解決するための手段】
本発明によれば，基板に塗布液を塗布する塗布処理装置であって，基板を保持する基板保持部材と，前記基板保持部材を回転させる回転駆動部と，前記基板保持部材に保持された基板に対し，往復揺動しながら塗布液を吐出するノズルと，を備え，前記基板保持部材に保持された基板を，前記回転駆動部により相対的に低速度で回転させた状態で，前記ノズルを往復揺動させながら前記基板に対して塗布液を吐出して，基板の中心部を中心とする円形領域に塗布液を供給し，当該塗布液の供給された基板を前記回転駆動部により相対的に高速度で回転させて，前記円形領域の塗布液を基板全面に広げ，前記ノズルの材質には，磁性を有するものが用いられ，前記ノズルは，ノズル保持部に保持されており，前記ノズル保持部には，前記ノズルの側方に位置する側部が形成され，当該側部は，ソレノイドになっており，前記ノズルは，前記ノズル保持部のソレノイドの電磁力によって揺動できることを特徴とする塗布処理装置が提供される。
【０００８】
この塗布処理装置によれば，基板を回転させた状態で，往復揺動しているノズルから基板に対し塗布液を吐出することができる。こうすることにより，例えば基板の中心部周辺の円形領域に塗布液を供給できる。そして塗布液が円形状に塗布された基板を高速回転させて，当該塗布液を基板全面に広げることができる。かかる場合，基板上の幅のある円形領域に塗布液が供給されるので，その後の回転で塗布液が広げられる面積が少なくて済む。それ故塗布液を回転させて広げても，放射状の模様が現れることがなく，塗布斑を抑制できる。また，塗布液の広がる面積が小さく，塗布液が基板全面に広がりやすくなるので，その分，この塗布液を低速回転で広げることができる。この結果，速度差に起因する基板の中心部と外周部との溶剤の揮発量の差が減少し，基板上に均一な膜厚の塗布膜が形成できる。さらに，塗布液が基板中心部を中心とする円形状に吐出されるので，その後の回転により塗布液が基板面内に均一に広げられる。したがって，この発明によれば，基板が大口径であっても，基板上に塗布液が斑なく，均一に塗布できる。
【０００９】
本発明によれば，基板に塗布液を塗布する塗布処理装置であって，基板に塗布液を塗布する塗布処理装置であって，基板を保持する基板保持部材と，前記基板保持部材を回転させる回転駆動部と，前記基板保持部材に保持された基板に対し，往復揺動しながら塗布液を吐出するノズルと，前記基板保持部材と前記ノズルとを水平方向に相対的に移動させる駆動部と，を備え，前記ノズルを往復揺動させ，前記基板保持部材に保持された基板に対して塗布液を吐出しながら，前記駆動部により前記ノズルと基板とを相対的に移動させて，基板の中心部付近の領域に塗布液を供給し，当該塗布液の供給された基板を前記回転駆動部により回転させて，前記中心部付近の領域の塗布液を基板全面に広げ，前記ノズルの材質には，磁性を有するものが用いられ，前記ノズルは，ノズル保持部に保持されており，前記ノズル保持部には，前記ノズルの側方に位置する側部が形成され，当該側部は，ソレノイドになっており，前記ノズルは，前記ノズル保持部のソレノイドの電磁力によって揺動できることを特徴とする塗布処理装置が提供される。
【００１０】
この塗布処理装置によれば，ノズルを往復揺動させ，さらにノズルから塗布液を吐出しながら，当該ノズルと基板とを相対的に移動させて，基板上の所定領域に塗布液を塗布できる。また，回転駆動部によって，基板の中心付近の領域に塗布液の供給された基板を回転させて，当該塗布液を基板全面に広げることができる。かかる場合も，上述したように塗布液が広げられる範囲が狭くなるので，基板上に塗布斑ができるのを抑制できる。
【００１１】
本発明によれば，基板に塗布液を塗布する塗布処理装置であって，基板を保持する基板保持部材と，前記基板保持部材を回転させる回転駆動部と，前記基板保持部材に保持された基板に対し，往復揺動しながら塗布液を吐出するノズルと，を備え，前記基板保持部材に保持された基板を，前記回転駆動部により相対的に低速度で回転させた状態で，前記ノズルを往復揺動させながら前記基板に対して塗布液を吐出して，基板の中心部を中心とする円形領域に塗布液を供給し，当該塗布液の供給された基板を前記回転駆動部により相対的に高速度で回転させて，前記円形領域の塗布液を基板全面に広げ，前記ノズルは，ノズル保持部に保持されており，前記ノズル保持部は，前記ノズルの側方に位置する側部と，当該側部と前記ノズルとを連結する弾性体とを備え，前記ノズルは，前記ノズル保持部の弾性体の弾性力によって揺動できることを特徴とする，塗布処理装置が提供される。
【００１２】
本発明によれば，基板に塗布液を塗布する塗布処理装置であって，基板を保持する基板保持部材と，前記基板保持部材を回転させる回転駆動部と，前記基板保持部材に保持された基板に対し，往復揺動しながら塗布液を吐出するノズルと，前記基板保持部材と前記ノズルとを水平方向に相対的に移動させる駆動部と，を備え，前記ノズルを往復揺動させ，前記基板保持部材に保持された基板に対して塗布液を吐出しながら，前記駆動部により前記ノズルと基板とを相対的に移動させて，基板の中心部付近の領域に塗布液を供給し，当該塗布液の供給された基板を前記回転駆動部により回転させて，前記中心部付近の領域の塗布液を基板全面に広げ，前記ノズルは，ノズル保持部に保持されており，前記ノズル保持部は，前記ノズルの側方に位置する側部と，当該側部と前記ノズルとを連結する弾性体とを備え，前記ノズルは，前記ノズル保持部の弾性体の弾性力によって揺動できることを特徴とする，塗布処理装置が提供される。
【００１３】
本発明によれば，基板に塗布液を塗布する塗布処理装置であって，基板を保持する基板保持部材と，前記基板保持部材を回転させる回転駆動部と，前記基板保持部材に保持された基板に対し，往復揺動しながら塗布液を吐出するノズルと，を備え，前記基板保持部材に保持された基板を，前記回転駆動部により相対的に低速度で回転させた状態で，前記ノズルを往復揺動させながら前記基板に対して塗布液を吐出して，基板の中心部を中心とする円形領域に塗布液を供給し，当該塗布液の供給された基板を前記回転駆動部により相対的に高速度で回転させて，前記円形領域の塗布液を基板全面に広げ，前記ノズルを揺動させるための揺動駆動部を備え，前記揺動駆動部は，カバーに覆われて，かつノズルを保持するノズル保持部に取り付けられていることを特徴とする，塗布処理装置が提供される。この塗布処理装置によれば，揺動駆動部がノズル保持部に取り付けられるので，ノズルと揺動駆動部が近くなり，ノズルと揺動駆動部とを連動させる機構が簡略化できる。さらに，揺動駆動部がカバーで覆われているので，揺動駆動部から発生したパーティクルが装置内に飛散することを防止できる。したがって，基板に不純物が付着することが防止される。
【００１４】
本発明によれば，基板に塗布液を塗布する塗布処理装置であって，基板を保持する基板保持部材と，前記基板保持部材を回転させる回転駆動部と，前記基板保持部材に保持された基板に対し，往復揺動しながら塗布液を吐出するノズルと，前記基板保持部材と前記ノズルとを水平方向に相対的に移動させる駆動部と，を備え，前記ノズルを往復揺動させ，前記基板保持部材に保持された基板に対して塗布液を吐出しながら，前記駆動部により前記ノズルと基板とを相対的に移動させて，基板の中心部付近の領域に塗布液を供給し，当該塗布液の供給された基板を前記回転駆動部により回転させて，前記中心部付近の領域の塗布液を基板全面に広げ，前記ノズルを揺動させるための揺動駆動部を備え，前記揺動駆動部は，カバーに覆われて，かつノズルを保持するノズル保持部に取り付けられていることを特徴とする，塗布処理装置が提供される。
【００１５】
本発明によれば，基板に塗布液を塗布する塗布処理装置であって，基板を保持する基板保持部材と，前記基板保持部材を回転させる回転駆動部と，前記基板保持部材に保持された基板に対し，往復揺動しながら塗布液を吐出するノズルと，を備え，前記基板保持部材に保持された基板を，前記回転駆動部により相対的に低速度で回転させた状態で，前記ノズルを往復揺動させながら前記基板に対して塗布液を吐出して，基板の中心部を中心とする円形領域に塗布液を供給し，当該塗布液の供給された基板を前記回転駆動部により相対的に高速度で回転させて，前記円形領域の塗布液を基板全面に広げ，前記ノズルの揺動角度を変更可能な制御部を備えたことを特徴とする，塗布処理装置が提供される。この制御部により，例えば塗布液を吐出しながら揺動しているノズルが基板上を相対的に移動しているときに，適宜ノズルの揺動角度を変えていくことにより，基板上の所定形状の領域に塗布液を供給できる。したがって，基板を回転させなくても，基板上の円形領域に塗布液を塗布することもできる。
【００１６】
本発明によれば，基板に塗布液を塗布する塗布処理装置であって，基板を保持する基板保持部材と，前記基板保持部材を回転させる回転駆動部と，前記基板保持部材に保持された基板に対し，往復揺動しながら塗布液を吐出するノズルと，前記基板保持部材と前記ノズルとを水平方向に相対的に移動させる駆動部と，を備え，前記ノズルを往復揺動させ，前記基板保持部材に保持された基板に対して塗布液を吐出しながら，前記駆動部により前記ノズルと基板とを相対的に移動させて，基板の中心部付近の領域に塗布液を供給し，当該塗布液の供給された基板を前記回転駆動部により回転させて，前記中心部付近の領域の塗布液を基板全面に広げ，前記ノズルの揺動角度を変更可能な制御部を備えたことを特徴とする，塗布処理装置が提供される。
【００１７】
上記塗布処理装置は，前記ノズルの揺動速度を変更可能な制御部を備えていてもよい。この制御部によって，例えば往復揺動しているノズルが基板方向に対して最大角度に近づいたときに，揺動速度を下げ，そのノズルの角度が小さくなったときに，揺動速度を上げるようにする。こうすることにより，基板上に常に一定量の塗布液が滴下され，基板上に均一な塗布液が供給できる。
【００１９】
【発明の実施の形態】
以下，本発明の好ましい実施の形態について説明する。図１は，本実施の形態にかかる塗布処理装置が搭載されたＳＯＤ膜形成システム１の構成の概略を示す平面図であり，図２は，ＳＯＤ膜形成システム１の正面図であり，図３は，ＳＯＤ膜形成システム１の背面図である。このＳＯＤ膜形成システム１は，例えばウェハＷ上に低誘電率の層間絶縁膜（Ｌｏｗ―Ｋ膜）を形成するための処理システムである。
【００２０】
ＳＯＤ膜形成システム１は，図１に示すように，例えば２５枚のウェハＷをカセット単位で外部からＳＯＤ膜形成システム１に対して搬入出したり，カセットＣに対してウェハＷを搬入出したりするカセットステーション２と，ＳＯＤ膜形成工程の中で枚葉式に所定の処理を施す各種処理装置を多段配置してなる処理ステーション３とを一体に接続した構成を有している。
【００２１】
カセットステーション２では，載置部となるカセット載置台１０上の所定の位置に，複数のカセットＣをＸ方向（図１中の上下方向）に一列に載置自在となっている。そして，このカセット配列方向（Ｘ方向）とカセットＣに収容されたウェハＷのウェハ配列方向（Ｚ方向；鉛直方向）に対して移送可能なウェハ搬送体１１が搬送路１２に沿って移動自在に設けられており，各カセットＣに対して選択的にアクセスできるようになっている。
【００２２】
ウェハ搬送体１１は，ウェハＷの位置合わせを行うアライメント機能を備えている。このウェハ搬送体１１は，後述するように処理ステーション３側の第３の処理装置群G３に属するトランジッションステージ３１に対してもアクセスできるように構成されている。
【００２３】
処理ステーション３では，その中心部に主搬送装置１３が設けられており，この主搬送装置１３の周辺には各種処理装置が多段に配置されて処理装置群を構成している。このＳＯＤ膜形成システム１においては，４つの処理装置群G1，G2，G3，G4が配置されており，第１及び第２の処理装置群G1，G2は，ＳＯＤ膜形成システム１の正面側に配置され，第３の処理装置群G3は，カセットステーション２に隣接して配置され，第４の処理装置群G4は，主搬送装置１３は挟んで，第３の処理装置群G3の反対側に配置されている。主搬送装置１３は，これらの処理装置群G1，G2，G3及びG4内に配置されている後述する各種処理装置に対して，ウェハＷを搬入出可能である。なお，処理装置群の数や配置は，ウェハＷに施される処理の種類によって異なり，任意に選択可能である。
【００２４】
第１の処理装置群G1では，例えば図２に示すように本実施の形態にかかる塗布処理装置１７，１８が下から順に２段に配置されている。第２の処理装置群G2には，例えば塗布処理装置１７等で用いられる塗布液等が貯蔵され，当該塗布液等の供給源となる処理液キャビネット１９と，塗布処理装置２０とが下から順に２段に配置されている。
【００２５】
第３の処理装置群G3では，例えば図３に示すように，ウェハＷを冷却処理するクーリング装置３０，ウェハＷの受け渡しを行うためのトランジッションステージ３１，ウェハＷを低温で加熱処理する低温加熱処理装置３２，ウェハＷを硬化処理するＤＬＣ（Dielectric Low Oxygen Concentration Hotplate Cure）装置３３，３４が下から順に例えば５段に積み重ねられている。
【００２６】
第４の処理装置群G4では，例えばクーリング装置４０，４１，低温加熱処理装置４２，ウェハＷを低酸素雰囲気に維持して加熱処理する低酸素加熱処理装置４３，４４が下から順に例えば５段に積み重ねられている。
【００２７】
次に，上述した塗布処理装置１７の構成について詳しく説明する。図４は，塗布処理装置１７の構成の概略を示す縦断面の説明図であり，図５は，塗布処理装置１７の横断面の説明図である。
【００２８】
塗布処理装置１７は，例えば図４に示すようにケーシング１７ａを有し，このケーシング１７ａ内には，ウェハＷを保持し，回転させるための基板保持部材としてのスピンチャック５０が設けられている。スピンチャック５０は，例えばウェハＷが保持される保持部５０ａと，この保持部５０ａを下方から支持する垂直シャフト５０ｂによって主に構成されている。
【００２９】
保持部５０ａの上面は，水平に形成されており，当該上面には，例えばウェハＷを吸着するための図示しない吸引口が設けられている。これにより，スピンチャック５０は，ウェハＷを水平に吸着保持することができる。垂直シャフト５０ｂは，例えばスピンチャック５０の下方に設けられたモータ等を備えた回転駆動部５１に連動しており，この回転駆動部５１によって所定の回転速度で回転できる。したがって，スピンチャック５０に保持されたウェハＷは，回転駆動部５１によって所定の速度で回転できる。また，回転駆動部５１は，例えば垂直シャフト５０ｂを上下動させるシリンダを備えており，スピンチャック５０全体を上下動させることができる。なお，回転駆動部５１の動作は，制御部Ｋにより制御されている。
【００３０】
スピンチャック５０の外方には，ウェハＷから飛散した塗布液等を受け止め，回収するためのカップ５２が設けられている。カップ５２は，上面が開口した略円筒形状を有し，スピンチャック５０上のウェハＷの外方と下方とを囲むように形成されている。カップ５２の下面５２ａには，回収した塗布液等を排液する排液管５３とカップ５２内の雰囲気を排気する排気管５４とが接続されている。
【００３１】
図５に示すようにカップ５２の外方，例えばＹ方向負方向側（図５の下方向側）の外方には，ノズル待機部Ｔ１が設置されている。ノズル待機部Ｔ１には，例えば第１のノズルバス５５が設置されている。この第１のノズルバス５５には，例えば図示しない溶剤蒸気噴出口が設けられており，第１のノズルバス５５内を溶剤雰囲気にできる。したがって，待機中の後述する塗布液吐出ノズル６０や溶剤吐出ノズル６６を溶剤雰囲気に維持することができる。また，ノズル待機部Ｔ１には，溶剤により塗布液吐出ノズル６０の先端を洗浄する機構や，塗布液吐出ノズル６０から少量の液体を定期的に吐出し，塗布液吐出ノズル６０の先端の付着物を洗い落とす機構を設けてもよい。
【００３２】
塗布液を吐出するノズルとしての塗布液吐出ノズル６０は，例えば図４，５に示すようにノズル保持部としてのノズルホルダ６１に保持されている。塗布液吐出ノズル６０は，ノズルホルダ６１のＹ方向負方向側に，吐出口６０ａが下方向に向くように保持されている。この吐出口６０ａは，例えば直径５０μｍ〜２０００μｍの口径を有し，吐出口６０ａからの吐出量は，吐出流量を変えることによって制御されている。例えば図６に示すように塗布液吐出ノズル６０は，揺動軸である水平シャフト６２に支持されている。水平シャフト６２は，Ｙ方向に沿って水平に設けられており，ノズルホルダ６１を貫通して，ノズルホルダ６１のＹ方向正方向側にある揺動駆動部６３に接続されている。水平シャフト６２は，ノズルホルダ６１に対して回転自在に貫通している。つまり，水平シャフト６２に支持された塗布液吐出ノズル６０は，ノズルホルダ６１に対して揺動自在に取り付けられている。そして，塗布液吐出ノズル６０の揺動は，Ｘ−Ｚ面内で行われる。
【００３３】
揺動駆動部６３は，カバー６４で覆われており，例えばこのカバー６４はノズルホルダ６１のＹ方向正方向側の側面に固着されている。揺動駆動部６３は，例えば油圧式揺動モータを備えている。この油圧式揺動モータは，油圧によって従動節を所定の揺動速度，揺動角度で往復揺動できるものである。すなわち，揺動駆動部６３は，水平シャフト６２を介して塗布液吐出ノズル６０を所定の角度，所定の速度で往復揺動させることができる。揺動駆動部６３の動作は，例えば図４，５に示すように制御部Ｋに制御されている。したがって，制御部Ｋの設定に従って，塗布液吐出ノズル６０は揺動できる。
【００３４】
塗布液吐出ノズル６０は，塗布液供給管６５によって図示しない塗布液供給装置に連通しており，塗布液吐出ノズル６０からは，所定のタイミングで所定の流量の塗布液を吐出させることができる。この塗布液吐出ノズル６０から吐出される塗布液は，例えば絶縁膜材料であるシロキサン系ポリマーとその溶剤とが混合されたものである。
【００３５】
ノズルホルダ６１には，図４に示すように塗布液の溶剤を吐出する溶剤吐出ノズル６６が取り付けられている。溶剤吐出ノズル６６は，例えば溶剤供給管６７によって図示しない溶剤供給装置に接続されている。
【００３６】
ノズルホルダ６１は，搬送手段であるノズルアーム７０に支持されている。図５に示すようにケーシング１７ａ内には，Ｙ方向に沿ってノズル待機部Ｔ１からカップ５２付近まで延びるレール７１が敷設されている。ノズルアーム７０は，駆動部としてのアーム駆動部７２によりレール７１上をＹ方向に移動できる。したがって，ノズルアーム７０は，ノズルホルダ６１に保持された塗布液吐出ノズル６０や溶剤吐出ノズル６６をノズル待機部Ｔ１からウェハＷの中心部上方まで搬送できる。アーム駆動部７２の動作は，例えば制御部Ｋにより制御されている。したがって，ノズルアーム７０は，制御部Ｋの設定に従って所定のタイミングで所定位置まで塗布液吐出ノズル６０や溶剤吐出ノズル６６を搬送する。
【００３７】
ノズルアーム７０は，図示しないシリンダ等によりＸ方向に伸縮自在である。これにより，溶剤吐出ノズル６６や塗布液吐出ノズル６０の位置をウェハＷの中心部上方に合わせることができる。また，ノズルアーム７０は，Ｚ方向にも上下動できる。これにより，塗布液吐出ノズル６０や溶剤吐出ノズル６６と，スピンチャック５０上のウェハＷとの距離を調整できる。このようにノズルアーム７０は，Ｘ，Ｙ，Ｚ方向に三次元に移動できる。なお，ノズルアーム７０のＹ方向，Ｚ方向の移動も制御部Ｋで制御している。
【００３８】
図５に示すように例えばケーシング１７ａ内のカップ５２のＹ方向正方向側には，サブノズル８０の待機部Ｔ２が設置されている。サブノズル８０は，ウェハＷの外縁部に塗布液の溶剤を吐出するものである。待機部Ｔ２には，例えば溶剤雰囲気に維持できる第２のノズルバス８１が設けられている。サブノズル８０は，例えば回動アーム８２に保持されている。回動アーム８２は，例えば回転軸である支柱８３に取り付けられており，支柱８３は，図示しないモータにより回転できる。そして，支柱８３を回転させることによって回動アーム８１を回動させて，サブノズル８０を，待機部Ｔ２とカップ５２内のウェハ外縁部との間で往復させることができる。
【００３９】
また，ケーシング１７ａの上部には，温度及び湿度が調節され，清浄化された窒素ガス，不活性気体，エア等の気体をカップ５２内に供給するダクト９０が接続されており，ウェハＷの塗布処理時に当該気体を供給し，カップ５２内を所定の雰囲気に維持することができる。
【００４０】
次に，以上のように構成されている塗布処理装置１７の作用について，ＳＯＤ膜形成システム１で行われるＳＯＤ膜形成工程のプロセスと共に説明する。
【００４１】
先ず，ウェハ搬送体１１によりカセットＣから未処理のウェハＷが１枚取り出され，第３の処理装置群G3に属するトランジッションステージ３１に搬送される。次いで，ウェハＷは主搬送装置１３によってクーリング装置３０に搬送され，所定の温度に冷却される。所定温度に冷却されたウェハＷは，主搬送装置１３によって，塗布処理装置１７に搬送される。
【００４２】
この塗布処理装置１７において塗布膜が形成されたウェハＷは，主搬送装置１３によって低温加熱処理装置３２又は４２，低酸素加熱処理装置４３又は４４に順次搬送され，塗布膜内の溶剤を揮発した後に，ＤＬＣ装置３３に搬送される。
【００４３】
ＤＬＣ装置３３でキュア処理が施されたウェハＷは，トランジッションステージ３１に戻され，その後ウェハＷは，ウェハ搬送体１１によってカセットＣに搬送されて，一連のＳＯＤ膜形成工程が終了する。
【００４４】
次に，上述の塗布処理装置１７で行われる塗布処理プロセスについて説明する。先ず，ウェハＷが塗布処理装置１７に搬入される前に，ダクト９０から例えば温度２３℃，湿度４５％に調節された清浄なエアが供給され始め，その一方でカップ５２の排気管５４から排気が開始される。これによって，カップ５２内が所定の雰囲気に維持されると共に，塗布処理中に発生するパーティクルを除去できる。
【００４５】
そして，前処理であるクーリング装置３０における冷却処理が終了すると，ウェハＷは，主搬送装置１３によってケーシング１７ａ内に搬送され，予めカップ５２の上方で待機していたスピンチャック５０に受け渡される。続いてスピンチャック５０が下降し，ウェハＷがカップ５２内に収容される。ウェハＷがカップ５２内に収容されると，ノズル待機部Ｔ１で待機していた溶剤吐出ノズル６６が，ノズルアーム７０によってウェハＷの中心部の上方まで移動する。そして，溶剤吐出ノズル６６からウェハＷの中心部に所定量の溶剤が吐出される。
【００４６】
ウェハＷ上に所定量の溶剤が吐出されると，回転駆動部５１によってウェハＷが回転され，ウェハＷ上の溶剤がウェハ全面に広げられる。その後，さらにウェハＷを回転し続けることにより，ウェハＷ上の溶剤が乾燥又は振り切られる。この溶剤の供給，乾燥により，ウェハＷ上に付着していた塵埃等の不純物が除去され，ウェハＷの塗布液に対する濡れ性が向上する。
【００４７】
次に，ノズルアーム７０によりノズルホルダ６１がＸ方向に移動され，図４，５に示すように塗布液吐出ノズル６０がウェハＷの中心部の上方に移動する。塗布液吐出ノズル６０がウェハＷの中心部上方に位置すると，塗布液吐出ノズル６０が，図７に示すように揺動駆動部６３によりＸ方向に往復揺動する。この時の揺動角度は，例えば塗布液吐出ノズル６０から吐出される塗布液がウェハＷの直径の半分程度の領域に滴下されるように設定する。例えばウェハＷの直径が３０ｃｍの場合，１５ｃｍの直径上に塗布液が滴下される。また，塗布液吐出ノズル６０の揺動周波数は，例えば３〜３０Ｈｚ程度に設定する。
【００４８】
塗布液吐出ノズル６０の揺動が開始されると，例えばウェハＷが低速度，例えば５〜５０ｒｐｍ程度で回転され始める。そして，回転されたウェハＷ上に，揺動している塗布液吐出ノズル６０から線状の塗布液が吐出される。所定時間塗布液を吐出し続けると，図８に示すようにウェハＷの中心部を中心とする円形領域Ｒに塗布液が塗布される。なお，例えばウェハＷの直径が３０ｃｍの場合，円形領域Ｒの直径は１５ｃｍ程度になる。
【００４９】
所定時間塗布液が吐出され，ウェハＷの円形領域Ｒに塗布液が供給されると，塗布液の吐出が停止され，塗布液吐出ノズル６０の揺動が停止される。その後塗布液吐出ノズル６０はノズル待機部Ｔ１に戻される。一方，ウェハＷは，高速度，例えば５００〜２０００ｒｐｍ程度で回転され，ウェハＷ上の塗布液がウェハＷ全面に広げられる。その後，所定時間ウェハＷを回転し続けることにより，ウェハＷ上に所定膜厚の塗布膜が形成される。
【００５０】
ウェハＷ上に所定膜厚の塗布膜が形成されると，ウェハＷが再び低速度で回転され，待機部Ｔ２で待機していたサブノズル８０がウェハＷの外縁部上に移動する。そして，ウェハＷの外縁部に対して溶剤を吐出し，ウェハＷの外縁部の塗布膜が除去される。このウェハＷ外縁部の塗布膜の除去が終了すると，サブノズル８０が待機部Ｔ２に退避し，ウェハＷの回転が停止される。その後，スピンチャック５０上のウェハＷが主搬送装置１３に受け渡され，主搬送装置１３によって次工程の行われる低温加熱処理装置３２に搬送される。
【００５１】
以上の実施の形態によれば，ウェハＷを回転させた状態で，塗布液吐出ノズル６０を往復揺動させ，塗布液を吐出できるので，ウェハＷの中心部を中心とする円形領域Ｒに塗布液を供給できる。こうすることによって，その後に塗布液を広げる面積が減少し，ウェハＷ上に塗布液の斑ができるのを抑制できる。また，予め円形領域Ｒに塗布液が供給されるので，ウェハＷの回転によって塗布液をウェハ全面に広げやすくなるので，低回転の塗布が実現できる。この結果，速度の差に起因するウェハＷの中心部と外周部との溶剤の揮発量の差を抑えることができ，ウェハＷの中心部と外周部に斑のない同じ膜厚の塗布膜が形成できる。さらに，塗布斑を防止するために多量の塗布液をウェハＷ中心部に吐出する必要がなく，その分塗布液の消費量を低減することができる。
【００５２】
また，ノズルホルダ６１に取り付けられた揺動駆動部６３がカバー６４で覆われているので，ウェハＷ上の揺動駆動部６３から発生した塵埃等の不純物が処理中のウェハＷに付着することがなく，ウェハＷの汚染を防止できる。
【００５３】
前記実施の形態では，塗布液吐出ノズル６０の揺動は，揺動モータを備えた揺動駆動部６３を用いて行っていたが，他の機構を用いて行ってもよい。図９は，かかる一例を示すものであり，ノズルアーム７０に保持されるノズルホルダ１００は，例えば側方から見て開口部が下方に位置する略コ字形状に形成されており，水平の上部１００ａと，当該上部１００ａの両端からそれぞれ下方に向かって形成された側部１００ｂ，１００ｃとで主に構成されている。ノズルホルダ１００は，磁性のある材質，例えばステンレス鋼で形成されている。塗布液吐出ノズル１０１は，吐出口１０１ａを下方に向けた状態で，水平軸１０２を介して上部１００ａに回動自在に取り付けられている。また，塗布液吐出ノズル１０１は，側部１００ｂ，１００ｃに挟まれている。塗布液吐出ノズル１０１は，細長形状を有し，磁性のある材質，例えば鉄で形成されている。また，塗布液吐出ノズル１０１内には，吐出口１０１ａから図示しない塗布液供給装置に連通する塗布液供給管１０３が貫通している。
【００５４】
ノズルホルダ１００の一の側部１００ｂには，弾性体であるバネ１０４の一端が接続されており，このバネ１０４の他の一端は，塗布液吐出ノズル１０１の側面に接続されている。したがって，塗布液吐出ノズル１０１が一方向に揺動すると，バネ１０４の復元力により塗布液吐出ノズル１０１が逆方向に付勢されるようになっている。ノズルホルダ１００の他の側部１００ｃには，電源１０５に接続されたコイル１０６が巻かれている。つまり，塗布液吐出ノズル１０１の側方に位置する側部１００ｃは，ソレノイドになっている。側部１００ｃの下端部には，塗布液吐出ノズル１０１側である内側に突出した凸部１００ｄが形成されている。したがって，凸部１００ｄと塗布液吐出ノズル１０１とは近接している。
【００５５】
そして，電源１０５によってコイル１０６に，例えばＯＮ・ＯＦＦを繰り返す矩形波状の電流を流すと，先ずコイル１０６に電流が流れ，側部１００ｃに電磁力が生じ，塗布液吐出ノズル１０１が凸部１００ｄに引きつけられる。コイル１０６に電流が流れなくなると，凸部１００ｄの引力がなくなり，バネ１０４の弾性力と慣性力により塗布液吐出ノズル１０１が側部１００ｂ側に移動する。そして，再びコイル１０６に電流が流れると，塗布液吐出ノズル１０１が再び側部１００ｃ側に移動する。かかる動作を繰り返すことにより，塗布液吐出ノズル１０１は往復揺動する。そして，上述した実施の形態と同様に塗布液と吐出しながら，塗布液吐出ノズル１０１が揺動し，ウェハＷが回転することにより，ウェハＷ上の中心付近の円形領域に塗布液を供給できる。なお，塗布液吐出ノズル１０１の揺動角度や揺動角速度は，例えばコイル１０６に流れる電流の大きさを変えることにより制御できる。なお，塗布液吐出ノズル１０１に一定の極の磁性を持たせ，ソレノイドである側部１００ｂに異なる極の磁性を交互に生じさせて，その反引力によって塗布液吐出ノズル１０１を揺動させてもよい。この場合，バネ１０４がなくてもよい。また，揺動方法として，パルスモータ（ステップ回転式）を用いてもよい。
【００５６】
上述の実施の形態では，塗布液吐出ノズル６０をウェハＷの中心部上方で揺動させ，ウェハＷを回転させることにより，ウェハＷ上の円形領域Ｒに塗布液を供給していたが，ウェハＷの回転を停止した状態で，塗布液を吐出した塗布液吐出ノズル６０を揺動させ，当該塗布液吐出ノズル６０の位置を一定の水平方向にずらしていくことにより，ウェハＷ上の所定領域に塗布液を供給するようにしてもよい。かかる場合，例えば塗布液吐出ノズル６０の揺動に合わせて，塗布液吐出ノズル６０をＹ方向に移動させる。例えば塗布液吐出ノズル６０が最大角度になる度に，ノズルアーム７０がＹ方向正方向に所定距離ずつ移動する。こうすることにより，塗布液の軌跡が略矩形波形状になり，図１０に示すようにウェハＷ上の中心部付近に長方形状の塗布領域Ｒ１が形成される。この場合においても，その後塗布液を広げる範囲が狭くなるので，塗布斑の発生を抑制できる。
【００５７】
なお，前記例において，塗布液吐出ノズル６０の位置がＹ方向にずらされる度に，逐次塗布液吐出ノズル６０の揺動角度を変えていき，図１１に示すように最終的に塗布液がウェハＷの中心部を中心とする円形領域Ｒ２に供給されるようにしてもよい。例えば塗布液吐出ノズル６０の揺動角度の変更は，制御部Ｋによって行われる。塗布液吐出ノズル６０がウェハＷ上をＹ方向に移動していく間に，初め塗布液吐出ノズル６０の揺動角度を徐々に増大させ，その後減少させる。こうすることにより，ウェハＷ上の円形領域Ｒ２に塗布液を供給できる。
【００５８】
また，上記例では，塗布液吐出ノズル６０側をＹ方向に徐々に移動させていたが，ウェハＷ側を移動させてもよい。図１２，１３は，かかる一例を示すものであり，スピンチャック５０は，Ｙ方向に向けて敷設されたレール１１０上に移動自在に置かれている。スピンチャック５０には，レール１１０上を移動するためのモータ等を備えた水平駆動部１１１が設けられている。そして，ウェハＷ上に塗布液を塗布する際には，塗布液吐出ノズル６０が同じ位置で往復揺動しながら，塗布液を吐出し，その揺動に合わせてスピンチャック５０をＹ方向に所定距離ずつずらしていく。こうすることにより，前記実施の形態と同様にウェハＷ上の所定領域に塗布液を供給できる。その後，ウェハＷが高速度で回転され，ウェハＷ上の塗布液が拡散されて，ウェハＷ上に斑のない塗布膜が形成される。かかる例では，塗布液吐出ノズル６０が移動しないので，塗布液吐出ノズル６０に接続された塗布液供給管６６が塗布時に動かされず，塗布液吐出ノズル６０から安定した塗布液が吐出できる。
【００５９】
なお，以上の実施の形態では，揺動する塗布液吐出ノズル６０によってウェハ上の一部の領域に塗布液を吐出していたが，ウェハＷの全面に吐出するようにしてもよい。かかる場合，ウェハＷを回転させて塗布液を広げる工程が必要ないので，回転塗布によって生じる塗布斑が完全に防止できる。また，この際，塗布液吐出ノズル６０の一往復中に，制御部Ｋによって塗布液吐出ノズル６０の揺動速度を変動させてもよい。例えば塗布液吐出ノズル６０の下方向となす角度が大きくなるにつれて，揺動速度を遅くする。逆に，塗布液吐出ノズル６０の下方向となす角度が小さくなるにつれ，揺動速度を速くする。こうすることにより，ウェハＷ表面上には，常に同じ量の塗布液が滴下されるので，ウェハＷ面内に均一な膜厚の塗布膜を形成できる。
【００６０】
また，塗布液吐出ノズル６０を用いて，ウェハＷ上の所定箇所に部分的に塗布液を吐出するようにしてもよい。例えばウェハＷ上に塗布液が供給された後に，塗布液吐出ノズル６０が下地パターンの低い部分に移動し，当該下地パターンの低い部分に塗布液を供給する。こうすることによって，下地パターンの低い部分に塗布液が追加され，最終的にウェハＷ上に平坦な塗布膜が形成される。この結果，例えばウェハＷ全面に対して施される処理がウェハＷ面内において均等に行われ，ウェハＷ面内に均質なデバイスを形成できる。なお，ＳＯＤ膜形成システム１内に，膜厚測定器を設け，その膜厚の測定結果をフィードバックし，ウェハＷ上の所定箇所に部分的に塗布液を吐出するようにしてもよい。また，本実施の形態では，中心に円形の吐出口がある一般的なノズルを用いたが，例えば長方形の吐出口や複数の吐出口のあるノズルであってもよい。
【００６１】
以上の実施の形態は，本発明を層間絶縁膜を形成するための塗布液の塗布処理装置１７に適用したものであったが，本発明は，他の種の膜，例えば絶縁膜であるＳＯＧ膜，保護膜であるポリイミド膜，フォトレジスト膜等を形成するための塗布液の塗布処理装置にも適用できる。また，本発明は，ウェハＷ以外の基板例えばＦＰＤ（フラットパネルディスプレイ）基板，マスク基板，レクチル基板等の塗布処理装置にも適用できる。
【００６２】
【発明の効果】
本発明によれば，塗布液を基板上に斑なく均一に塗布できるので，基板全面に所定膜厚の塗布膜が形成され，歩留まりの向上が図られる。また，少量の塗布液で基板上に塗布膜を形成できるので，コストの削減が図られる。
【図面の簡単な説明】
【図１】本実施の形態にかかる塗布処理装置が搭載されたＳＯＤ膜形成システムの構成の概略を示す平面図である。
【図２】図１のＳＯＤ膜形成システムの正面図である。
【図３】図１のＳＯＤ膜形成システムの背面図である。
【図４】塗布処理装置の構成の概略を示す縦断面の説明図である。
【図５】図４の塗布処理装置の横断面の説明図である。
【図６】塗布液吐出ノズルが揺動する機構を説明するための説明図である。
【図７】塗布液吐出ノズルから塗布液を吐出している様子を示す説明図である。
【図８】塗布液が円形状の領域に塗布された様子を示すウェハの平面図である。
【図９】塗布液吐出ノズルを揺動させるための機構の一例を示す説明図である。
【図１０】塗布液が長方形状の領域に塗布された様子を示すウェハの平面図である。
【図１１】塗布液が円形状の領域に塗布された様子を示すウェハの平面図である。
【図１２】スピンチャックを移動させるレールを設けた場合の塗布処理装置の構成の概略を示す縦断面の説明図である。
【図１３】図１２の塗布処理装置の横断面の説明図である。
【符号の説明】
１ＳＯＤ膜形成システム
１７塗布処理装置
５０スピンチャック
６０塗布液吐出ノズル
６１ノズルホルダ
６３揺動駆動部
７０ノズルアーム
Ｗウェハ[0001]
BACKGROUND OF THE INVENTION
  The present invention provides a substrate coating treatment apparatus.In placeRelated.
[0002]
[Prior art]
In a semiconductor device manufacturing process, an interlayer insulating film is formed by, for example, an SOD (Spin on Dielectric) film forming system. In this SOD film forming system, a coating liquid is spin-coated on a semiconductor wafer (hereinafter referred to as a wafer), and the interlayer insulating film is formed by subjecting the wafer to physical processing or chemical processing such as heat treatment.
[0003]
The above-described spin coating is performed in a coating processing apparatus mounted on the SOD film forming system. The coating processing apparatus is, for example, a spin chuck that holds and rotates the wafer, or moves above the center of the wafer to apply a coating liquid onto the wafer. A nozzle for discharging the liquid. As the coating solution, for example, an insulating film material diluted with an organic solvent is used. In spin coating, for example, a predetermined amount of coating solution is discharged from the nozzle to the center of the wafer. Thereafter, the wafer is rotated, and the coating solution at the center of the wafer is spread to the outer peripheral side by the centrifugal force, and the coating solution is applied to the entire surface of the wafer. Due to the spread of the coating solution, a coating film that later becomes an interlayer insulating film was formed on the wafer.
[0004]
[Problems to be solved by the invention]
Incidentally, in recent years, in order to improve production efficiency and the like, the diameter of wafers has been increased. In the case of such a large-diameter wafer, if spin coating similar to the conventional one is performed, the coating solution applied to the central portion of the wafer is spread over a wider range. As a result, a radial pattern from the wafer center to the outer periphery appears in the coating film on the wafer, and coating spots are formed on the wafer. In addition, when the wafer has a large diameter, the difference in peripheral speed between the wafer central portion and the outer peripheral portion becomes large. For example, the volatilization amount of the solvent at the central portion of the wafer W and the outer peripheral portion is different. The film thickness of the coating film formed on the outer peripheral side is greatly different. In addition, the peripheral speed of the outer peripheral portion becomes high, and film spots are generated due to wind. Such unevenness in coating spots and film thickness causes product defects and is not preferable.
[0005]
On the other hand, if a large amount of coating solution is discharged to the center of the wafer so that coating spots do not occur, the amount of coating solution scattered from the wafer also increases, increasing the consumption of expensive coating solution and increasing costs. .
[0006]
  The present invention has been made in view of the above points, and is a coating processing apparatus that can uniformly apply a coating solution to a substrate such as a wafer having a large diameter without spots.PlaceIts purpose is to provide.
[0007]
[Means for Solving the Problems]
  According to the present invention, there is provided a coating processing apparatus that coats a substrate with a coating liquid, a substrate holding member that holds the substrate, a rotation driving unit that rotates the substrate holding member, and a substrate that is held by the substrate holding member. In contrast, a nozzle that discharges the coating liquid while reciprocally swinging is provided, and the substrate held by the substrate holding member is rotated at a relatively low speed by the rotation driving unit, and the nozzle is moved. The coating liquid is discharged to the substrate while being reciprocally swung, the coating liquid is supplied to a circular area centered on the center of the substrate, and the substrate to which the coating liquid is supplied is relatively moved by the rotation driving unit. The coating solution in the circular area is spread over the entire surface of the substrate by rotating at a high speed.The nozzle is made of a magnetic material, the nozzle is held by a nozzle holding portion, and the nozzle holding portion is formed with a side portion located on the side of the nozzle, The side part is a solenoid, and the nozzle can be swung by the electromagnetic force of the solenoid of the nozzle holding part.An application processing apparatus is provided.
[0008]
According to this coating processing apparatus, the coating liquid can be discharged to the substrate from the reciprocatingly swung nozzle while the substrate is rotated. In this way, for example, the coating liquid can be supplied to a circular area around the center of the substrate. And the board | substrate with which the coating liquid was apply | coated circularly can be rotated at high speed, and the said coating liquid can be spread over the whole substrate surface. In such a case, since the coating liquid is supplied to a wide circular area on the substrate, the area where the coating liquid is spread by subsequent rotation can be reduced. Therefore, even if the coating solution is rotated and spread, a radial pattern does not appear and coating spots can be suppressed. Further, since the area where the coating solution spreads is small and the coating solution spreads easily over the entire surface of the substrate, the coating solution can be spread at a low speed. As a result, the difference in the amount of solvent volatilization between the central portion and the outer peripheral portion of the substrate due to the speed difference is reduced, and a coating film having a uniform thickness can be formed on the substrate. Further, since the coating liquid is discharged in a circular shape centering on the center of the substrate, the coating liquid is spread uniformly on the substrate surface by the subsequent rotation. Therefore, according to the present invention, even if the substrate has a large diameter, the coating liquid can be uniformly applied on the substrate without any spots.
[0009]
  According to the present invention, there is provided a coating processing apparatus for applying a coating liquid onto a substrate, and a coating processing apparatus for applying a coating liquid onto a substrate, wherein the substrate holding member that holds the substrate and the substrate holding member are rotated. A rotation drive unit, a nozzle that discharges a coating liquid while reciprocally swinging with respect to the substrate held by the substrate holding member, and a drive unit that relatively moves the substrate holding member and the nozzle in a horizontal direction; The nozzle is moved relative to the substrate by the drive unit while discharging the coating liquid to the substrate held by the substrate holding member. A coating solution is supplied to a region near the center, and the substrate to which the coating solution is supplied is rotated by the rotation driving unit to spread the coating solution in the region near the center on the entire surface of the substrate.The nozzle is made of a magnetic material, the nozzle is held by a nozzle holding portion, and the nozzle holding portion is formed with a side portion located on the side of the nozzle, The side part is a solenoid, and the nozzle can be swung by the electromagnetic force of the solenoid of the nozzle holding part.An application processing apparatus is provided.
[0010]
  According to this coating processing apparatus, it is possible to apply the coating liquid to a predetermined region on the substrate by reciprocally swinging the nozzle and further moving the nozzle and the substrate while discharging the coating liquid from the nozzle. Also, by the rotation drive part,Near the center of the boardBy rotating the substrate supplied with the coating liquid in the region, the coating liquid can be spread over the entire surface of the substrate. Even in such a case, as described above, the range in which the coating solution can be spread becomes narrow, so that it is possible to suppress the formation of coating spots on the substrate.
[0011]
  According to the present invention, there is provided a coating processing apparatus that coats a substrate with a coating liquid, a substrate holding member that holds the substrate, a rotation driving unit that rotates the substrate holding member, and a substrate that is held by the substrate holding member. In contrast, a nozzle that discharges the coating liquid while reciprocally swinging is provided, and the substrate held by the substrate holding member is rotated at a relatively low speed by the rotation driving unit, and the nozzle is moved. The coating liquid is discharged to the substrate while being reciprocally swung, the coating liquid is supplied to a circular area centered on the center of the substrate, and the substrate to which the coating liquid is supplied is relatively moved by the rotation driving unit. And the nozzle is held by a nozzle holding part, and the nozzle holding part includes a side part located on the side of the nozzle and the nozzle holding part. , Connect the side and the nozzle And an elastic member that, the nozzle is characterized in that it can be swung by the elastic force of the elastic body of the nozzle holder, a coating apparatus is provided.
[0012]
  According to the present invention, there is provided a coating processing apparatus that coats a substrate with a coating liquid, a substrate holding member that holds the substrate, a rotation driving unit that rotates the substrate holding member, and a substrate that is held by the substrate holding member. A nozzle that discharges the coating liquid while reciprocally swinging, and a drive unit that relatively moves the substrate holding member and the nozzle in the horizontal direction. While discharging the coating liquid onto the substrate held by the holding member, the drive unit moves the nozzle and the substrate relative to each other to supply the coating liquid to an area near the center of the substrate. The substrate to which the liquid is supplied is rotated by the rotation driving unit to spread the coating liquid in the region near the center on the entire surface of the substrate, the nozzle is held by the nozzle holding unit, and the nozzle holding unit is The side of the nozzle There is provided a coating processing apparatus, comprising: a side portion to be connected; and an elastic body for connecting the side portion and the nozzle, wherein the nozzle can be swung by an elastic force of an elastic body of the nozzle holding portion. The
[0013]
  According to the present invention, there is provided a coating processing apparatus that coats a substrate with a coating liquid, a substrate holding member that holds the substrate, a rotation driving unit that rotates the substrate holding member, and a substrate that is held by the substrate holding member. In contrast, a nozzle that discharges the coating liquid while reciprocally swinging is provided, and the substrate held by the substrate holding member is rotated at a relatively low speed by the rotation driving unit, and the nozzle is moved. The coating liquid is discharged to the substrate while being reciprocally swung, the coating liquid is supplied to a circular area centered on the center of the substrate, and the substrate to which the coating liquid is supplied is relatively moved by the rotation driving unit. And a swing drive unit for spreading the coating solution in the circular area over the entire surface of the substrate and swinging the nozzle, the swing drive unit being covered by a cover and having a nozzle Attached to the nozzle holder to hold Wherein the are, the coating processing apparatus is provided. According to this coating processing apparatus, since the swing drive unit is attached to the nozzle holding unit, the nozzle and the swing drive unit are close to each other, and the mechanism for interlocking the nozzle and the swing drive unit can be simplified. Furthermore, since the swing drive unit is covered with the cover, particles generated from the swing drive unit can be prevented from scattering into the apparatus. Therefore, impurities are prevented from adhering to the substrate.
[0014]
  According to the present invention, there is provided a coating processing apparatus that coats a substrate with a coating liquid, a substrate holding member that holds the substrate, a rotation driving unit that rotates the substrate holding member, and a substrate that is held by the substrate holding member. A nozzle that discharges the coating liquid while reciprocally swinging, and a drive unit that relatively moves the substrate holding member and the nozzle in the horizontal direction. While discharging the coating liquid onto the substrate held by the holding member, the drive unit moves the nozzle and the substrate relative to each other to supply the coating liquid to an area near the center of the substrate. The substrate to which the liquid is supplied is rotated by the rotation driving unit to spread the coating liquid in the region near the center part over the entire surface of the substrate, and includes a swing driving unit for swinging the nozzle. The part is covered with a cover, Characterized in that attached to the nozzle holding portion for holding the nozzle, coating treatment apparatus is provided.
[0015]
  According to the present invention, there is provided a coating processing apparatus that coats a substrate with a coating liquid, a substrate holding member that holds the substrate, a rotation driving unit that rotates the substrate holding member, and a substrate that is held by the substrate holding member. In contrast, a nozzle that discharges the coating liquid while reciprocally swinging is provided, and the substrate held by the substrate holding member is rotated at a relatively low speed by the rotation driving unit, and the nozzle is moved. The coating liquid is discharged to the substrate while being reciprocally swung, the coating liquid is supplied to a circular area centered on the center of the substrate, and the substrate to which the coating liquid is supplied is relatively moved by the rotation driving unit. The coating apparatus is provided with a controller capable of rotating at a high speed to spread the coating solution in the circular area over the entire surface of the substrate and changing the swing angle of the nozzle. By this control unit, for example, when a nozzle that is oscillating while discharging a coating liquid is relatively moving on the substrate, the oscillating angle of the nozzle is appropriately changed to thereby change the predetermined shape on the substrate. The coating liquid can be supplied to the region. Therefore, the coating liquid can be applied to a circular area on the substrate without rotating the substrate.
[0016]
  According to the present invention, there is provided a coating processing apparatus that coats a substrate with a coating liquid, a substrate holding member that holds the substrate, a rotation driving unit that rotates the substrate holding member, and a substrate that is held by the substrate holding member. A nozzle that discharges the coating liquid while reciprocally swinging, and a drive unit that relatively moves the substrate holding member and the nozzle in the horizontal direction. While discharging the coating liquid onto the substrate held by the holding member, the drive unit moves the nozzle and the substrate relative to each other to supply the coating liquid to an area near the center of the substrate. A control unit capable of changing the oscillation angle of the nozzle by rotating the substrate supplied with the liquid by the rotation driving unit to spread the coating liquid in the region near the central part over the entire surface of the substrate; A coating treatment device is provided That.
[0017]
  The coating treatment apparatus may include a control unit that can change a rocking speed of the nozzle. With this control unit, for example, when a reciprocating nozzle approaches a maximum angle with respect to the substrate direction, the swing speed is decreased, and when the nozzle angle is decreased, the swing speed is increased. To. By doing so, a constant amount of coating solution is always dropped onto the substrate, and a uniform coating solution can be supplied onto the substrate.
[0019]
DETAILED DESCRIPTION OF THE INVENTION
Hereinafter, preferred embodiments of the present invention will be described. FIG. 1 is a plan view schematically showing the configuration of the SOD film forming system 1 on which the coating apparatus according to this embodiment is mounted, and FIG. 2 is a front view of the SOD film forming system 1. FIG. 2 is a rear view of the SOD film forming system 1. The SOD film forming system 1 is a processing system for forming a low dielectric constant interlayer insulating film (Low-K film) on a wafer W, for example.
[0020]
As shown in FIG. 1, the SOD film forming system 1 carries, for example, 25 wafers W in and out of the SOD film forming system 1 from the outside in units of cassettes, and carries wafers W in and out of cassettes C. The cassette station 2 and the processing station 3 in which various processing devices for performing predetermined processing in a single wafer type in the SOD film forming process are arranged in multiple stages are integrally connected.
[0021]
In the cassette station 2, a plurality of cassettes C can be placed in a single line in the X direction (vertical direction in FIG. 1) at a predetermined position on the cassette placement table 10 serving as a placement portion. The wafer transfer body 11 that can be transferred in the cassette arrangement direction (X direction) and the wafer arrangement direction (Z direction; vertical direction) of the wafer W accommodated in the cassette C is movable along the transfer path 12. It is provided so that each cassette C can be selectively accessed.
[0022]
The wafer carrier 11 has an alignment function for aligning the wafer W. As will be described later, the wafer carrier 11 is configured to be accessible also to the transition stage 31 belonging to the third processing unit group G3 on the processing station 3 side.
[0023]
In the processing station 3, a main transfer device 13 is provided at the center thereof, and various processing devices are arranged in multiple stages around the main transfer device 13 to form a processing device group. In this SOD film forming system 1, four processing device groups G 1, G 2, G 3, G 4 are arranged, and the first and second processing device groups G 1, G 2 are arranged on the front side of the SOD film forming system 1. The third processing unit group G3 is disposed adjacent to the cassette station 2, and the fourth processing unit group G4 is disposed on the opposite side of the third processing unit group G3 with the main transfer unit 13 interposed therebetween. Has been placed. The main transfer device 13 can carry in / out the wafer W to / from various processing devices (described later) arranged in these processing device groups G1, G2, G3, and G4. The number and arrangement of processing apparatus groups vary depending on the type of processing performed on the wafer W, and can be arbitrarily selected.
[0024]
In the first processing device group G1, for example, as shown in FIG. 2, coating processing devices 17 and 18 according to the present embodiment are arranged in two stages in order from the bottom. In the second processing unit group G2, for example, a coating solution used in the coating processing unit 17 or the like is stored, and a processing solution cabinet 19 serving as a supply source of the coating solution and the coating processing unit 20 are sequentially arranged from the bottom. Arranged in two stages.
[0025]
In the third processing unit group G3, for example, as shown in FIG. 3, a cooling device 30 for cooling the wafer W, a transition stage 31 for transferring the wafer W, and a low temperature heating process for heating the wafer W at a low temperature. An apparatus 32 and DLC (Dielectric Low Oxygen Concentration Hotplate Cure) apparatuses 33 and 34 for curing the wafer W are stacked in, for example, five stages in order from the bottom.
[0026]
In the fourth processing unit group G4, for example, cooling devices 40 and 41, a low-temperature heat processing unit 42, and low-oxygen heat processing units 43 and 44 that perform heat processing while maintaining the wafer W in a low-oxygen atmosphere are sequentially arranged in, for example, five stages. Are stacked.
[0027]
Next, the configuration of the coating processing apparatus 17 described above will be described in detail. FIG. 4 is an explanatory view of a longitudinal section showing an outline of the configuration of the coating treatment apparatus 17, and FIG. 5 is an explanatory view of a transverse section of the coating treatment apparatus 17.
[0028]
For example, as shown in FIG. 4, the coating processing apparatus 17 has a casing 17a, and a spin chuck 50 as a substrate holding member for holding and rotating the wafer W is provided in the casing 17a. The spin chuck 50 is mainly configured by, for example, a holding unit 50a that holds the wafer W and a vertical shaft 50b that supports the holding unit 50a from below.
[0029]
The upper surface of the holding unit 50a is formed horizontally, and a suction port (not shown) for adsorbing the wafer W, for example, is provided on the upper surface. Accordingly, the spin chuck 50 can hold the wafer W by suction. The vertical shaft 50b is interlocked with, for example, a rotation drive unit 51 provided with a motor or the like provided below the spin chuck 50, and can be rotated at a predetermined rotation speed by the rotation drive unit 51. Therefore, the wafer W held on the spin chuck 50 can be rotated at a predetermined speed by the rotation driving unit 51. The rotation drive unit 51 includes a cylinder that moves the vertical shaft 50b up and down, for example, and can move the entire spin chuck 50 up and down. The operation of the rotation drive unit 51 is controlled by the control unit K.
[0030]
A cup 52 is provided outside the spin chuck 50 for receiving and collecting the coating liquid scattered from the wafer W. The cup 52 has a substantially cylindrical shape with an upper surface opened, and is formed so as to surround the outer side and the lower side of the wafer W on the spin chuck 50. Connected to the lower surface 52 a of the cup 52 are a drain pipe 53 for draining the collected coating liquid and an exhaust pipe 54 for exhausting the atmosphere in the cup 52.
[0031]
As shown in FIG. 5, a nozzle standby portion T1 is installed outside the cup 52, for example, outside the Y direction negative direction side (downward side in FIG. 5). For example, a first nozzle bath 55 is installed in the nozzle standby portion T1. The first nozzle bath 55 is provided with, for example, a solvent vapor ejection port (not shown) so that the inside of the first nozzle bath 55 can be in a solvent atmosphere. Accordingly, the coating liquid discharge nozzle 60 and the solvent discharge nozzle 66, which will be described later, in standby can be maintained in a solvent atmosphere. Further, the nozzle standby portion T1 has a mechanism for cleaning the tip of the coating liquid discharge nozzle 60 with a solvent, and periodically discharges a small amount of liquid from the coating liquid discharge nozzle 60, and deposits on the tip of the coating liquid discharge nozzle 60. There may be provided a mechanism for washing off.
[0032]
The coating liquid discharge nozzle 60 as a nozzle for discharging the coating liquid is held by a nozzle holder 61 as a nozzle holding portion as shown in FIGS. The coating liquid discharge nozzle 60 is held on the Y direction negative direction side of the nozzle holder 61 so that the discharge port 60a faces downward. The discharge port 60a has a diameter of, for example, 50 μm to 2000 μm, and the discharge amount from the discharge port 60a is controlled by changing the discharge flow rate. For example, as shown in FIG. 6, the coating liquid discharge nozzle 60 is supported by a horizontal shaft 62 that is a swing shaft. The horizontal shaft 62 is provided horizontally along the Y direction, passes through the nozzle holder 61, and is connected to a swing driving unit 63 on the Y direction positive direction side of the nozzle holder 61. The horizontal shaft 62 passes through the nozzle holder 61 so as to be rotatable. That is, the coating liquid discharge nozzle 60 supported by the horizontal shaft 62 is swingably attached to the nozzle holder 61. Then, the swing of the coating liquid discharge nozzle 60 is performed in the XZ plane.
[0033]
The swing drive unit 63 is covered with a cover 64, and for example, the cover 64 is fixed to the side surface of the nozzle holder 61 on the Y direction positive direction side. The swing drive unit 63 includes, for example, a hydraulic swing motor. This hydraulic oscillating motor is capable of reciprocally oscillating a driven node at a predetermined oscillating speed and oscillating angle by hydraulic pressure. That is, the swing drive unit 63 can swing the coating liquid discharge nozzle 60 back and forth at a predetermined angle and a predetermined speed via the horizontal shaft 62. The operation of the swing drive unit 63 is controlled by the control unit K as shown in FIGS. Therefore, the coating liquid discharge nozzle 60 can swing according to the setting of the control unit K.
[0034]
The coating liquid discharge nozzle 60 communicates with a coating liquid supply device (not shown) through a coating liquid supply pipe 65, and the coating liquid discharge nozzle 60 can discharge a coating liquid at a predetermined flow rate at a predetermined timing. The coating liquid discharged from the coating liquid discharge nozzle 60 is, for example, a mixture of a siloxane polymer that is an insulating film material and its solvent.
[0035]
As shown in FIG. 4, a solvent discharge nozzle 66 that discharges the solvent of the coating solution is attached to the nozzle holder 61. The solvent discharge nozzle 66 is connected to a solvent supply device (not shown) by, for example, a solvent supply pipe 67.
[0036]
The nozzle holder 61 is supported by a nozzle arm 70 that is a conveying means. As shown in FIG. 5, a rail 71 extending from the nozzle standby portion T1 to the vicinity of the cup 52 along the Y direction is laid in the casing 17a. The nozzle arm 70 can be moved in the Y direction on the rail 71 by an arm driving unit 72 as a driving unit. Accordingly, the nozzle arm 70 can transport the coating liquid discharge nozzle 60 and the solvent discharge nozzle 66 held by the nozzle holder 61 from the nozzle standby portion T1 to above the center portion of the wafer W. The operation of the arm driving unit 72 is controlled by the control unit K, for example. Accordingly, the nozzle arm 70 conveys the coating liquid discharge nozzle 60 and the solvent discharge nozzle 66 to a predetermined position at a predetermined timing according to the setting of the control unit K.
[0037]
The nozzle arm 70 can be expanded and contracted in the X direction by a cylinder or the like (not shown). As a result, the positions of the solvent discharge nozzle 66 and the coating liquid discharge nozzle 60 can be aligned above the center of the wafer W. The nozzle arm 70 can also move up and down in the Z direction. Thereby, the distance between the coating liquid discharge nozzle 60 and the solvent discharge nozzle 66 and the wafer W on the spin chuck 50 can be adjusted. In this way, the nozzle arm 70 can move three-dimensionally in the X, Y, and Z directions. The movement of the nozzle arm 70 in the Y and Z directions is also controlled by the control unit K.
[0038]
As shown in FIG. 5, for example, a standby portion T2 of the sub nozzle 80 is installed on the positive side in the Y direction of the cup 52 in the casing 17a. The sub nozzle 80 discharges the solvent of the coating solution to the outer edge portion of the wafer W. In the standby part T2, for example, a second nozzle bath 81 that can be maintained in a solvent atmosphere is provided. The sub nozzle 80 is held by, for example, a rotating arm 82. The rotating arm 82 is attached to a support column 83 that is a rotating shaft, for example, and the support column 83 can be rotated by a motor (not shown). Then, by rotating the support 83, the rotation arm 81 is rotated, and the sub nozzle 80 can be reciprocated between the standby portion T2 and the wafer outer edge portion in the cup 52.
[0039]
In addition, a duct 90 is connected to the upper portion of the casing 17a to supply a gas such as nitrogen gas, inert gas, air, etc., which has been adjusted in temperature and humidity, into the cup 52. The gas can be supplied at the time of processing, and the inside of the cup 52 can be maintained in a predetermined atmosphere.
[0040]
Next, the operation of the coating processing apparatus 17 configured as described above will be described together with the process of the SOD film forming process performed in the SOD film forming system 1.
[0041]
First, one unprocessed wafer W is taken out from the cassette C by the wafer transfer body 11 and transferred to the transition stage 31 belonging to the third processing unit group G3. Next, the wafer W is transferred to the cooling device 30 by the main transfer device 13 and cooled to a predetermined temperature. The wafer W cooled to a predetermined temperature is transferred to the coating processing apparatus 17 by the main transfer apparatus 13.
[0042]
The wafer W on which the coating film is formed in the coating processing apparatus 17 is sequentially transported to the low-temperature heat processing apparatus 32 or 42 and the low oxygen heat processing apparatus 43 or 44 by the main transport apparatus 13, and the solvent in the coating film is volatilized. Later, it is transported to the DLC device 33.
[0043]
The wafer W that has been cured by the DLC apparatus 33 is returned to the transition stage 31, and then the wafer W is transferred to the cassette C by the wafer transfer body 11 to complete a series of SOD film forming steps.
[0044]
Next, the coating process performed by the above-described coating processing apparatus 17 will be described. First, before the wafer W is carried into the coating processing apparatus 17, clean air adjusted to a temperature of 23 ° C. and a humidity of 45%, for example, starts to be supplied from the duct 90, while exhausting from the exhaust pipe 54 of the cup 52. Is started. As a result, the inside of the cup 52 is maintained in a predetermined atmosphere, and particles generated during the coating process can be removed.
[0045]
When the cooling process in the cooling apparatus 30 as the pre-process is completed, the wafer W is transferred into the casing 17a by the main transfer apparatus 13 and transferred to the spin chuck 50 that has been waiting in advance above the cup 52. Subsequently, the spin chuck 50 is lowered and the wafer W is accommodated in the cup 52. When the wafer W is accommodated in the cup 52, the solvent discharge nozzle 66 that has been waiting at the nozzle standby portion T <b> 1 is moved above the center portion of the wafer W by the nozzle arm 70. A predetermined amount of solvent is discharged from the solvent discharge nozzle 66 to the center of the wafer W.
[0046]
When a predetermined amount of solvent is discharged onto the wafer W, the rotation drive unit 51 rotates the wafer W, and the solvent on the wafer W is spread over the entire surface of the wafer. Thereafter, by further rotating the wafer W, the solvent on the wafer W is dried or shaken off. By supplying and drying the solvent, impurities such as dust adhering to the wafer W are removed, and the wettability of the wafer W to the coating liquid is improved.
[0047]
Next, the nozzle holder 61 is moved in the X direction by the nozzle arm 70, and the coating liquid discharge nozzle 60 is moved above the center of the wafer W as shown in FIGS. When the coating liquid discharge nozzle 60 is positioned above the central portion of the wafer W, the coating liquid discharge nozzle 60 is reciprocally swung in the X direction by the rocking drive unit 63 as shown in FIG. The swing angle at this time is set so that, for example, the coating liquid discharged from the coating liquid discharge nozzle 60 is dropped onto an area about half the diameter of the wafer W. For example, when the diameter of the wafer W is 30 cm, the coating liquid is dropped on the diameter of 15 cm. The oscillation frequency of the coating liquid discharge nozzle 60 is set to about 3 to 30 Hz, for example.
[0048]
When the swing of the coating liquid discharge nozzle 60 is started, for example, the wafer W starts to rotate at a low speed, for example, about 5 to 50 rpm. Then, a linear coating solution is discharged from the swinging coating solution discharge nozzle 60 onto the rotated wafer W. When the coating liquid is continuously discharged for a predetermined time, the coating liquid is applied to the circular region R centering on the center portion of the wafer W as shown in FIG. For example, when the diameter of the wafer W is 30 cm, the diameter of the circular region R is about 15 cm.
[0049]
When the coating liquid is discharged for a predetermined time and the coating liquid is supplied to the circular region R of the wafer W, the discharge of the coating liquid is stopped and the swing of the coating liquid discharge nozzle 60 is stopped. Thereafter, the coating liquid discharge nozzle 60 is returned to the nozzle standby portion T1. On the other hand, the wafer W is rotated at a high speed, for example, about 500 to 2000 rpm, and the coating liquid on the wafer W is spread over the entire surface of the wafer W. Thereafter, by continuing to rotate the wafer W for a predetermined time, a coating film having a predetermined thickness is formed on the wafer W.
[0050]
When a coating film having a predetermined film thickness is formed on the wafer W, the wafer W is rotated again at a low speed, and the sub nozzle 80 that has been waiting in the standby portion T2 moves onto the outer edge portion of the wafer W. And a solvent is discharged with respect to the outer edge part of the wafer W, and the coating film of the outer edge part of the wafer W is removed. When the removal of the coating film on the outer edge portion of the wafer W is completed, the sub-nozzle 80 is retracted to the standby portion T2, and the rotation of the wafer W is stopped. Thereafter, the wafer W on the spin chuck 50 is transferred to the main transfer device 13 and is transferred by the main transfer device 13 to the low-temperature heat treatment device 32 where the next process is performed.
[0051]
According to the above embodiment, since the coating liquid discharge nozzle 60 is reciprocally swung while the wafer W is rotated, and the coating liquid can be discharged, the coating is applied to the circular region R centering on the central portion of the wafer W. Liquid can be supplied. By doing so, the area where the coating liquid is spread afterwards is reduced, and it is possible to prevent the coating liquid from being spotted on the wafer W. In addition, since the coating liquid is supplied to the circular region R in advance, the coating liquid can be easily spread over the entire surface of the wafer by the rotation of the wafer W, so that low-speed coating can be realized. As a result, the difference in the amount of solvent volatilization between the central portion and the outer peripheral portion of the wafer W due to the difference in speed can be suppressed. Can be formed. Furthermore, it is not necessary to discharge a large amount of coating liquid to the center of the wafer W in order to prevent coating spots, and the consumption of the coating liquid can be reduced accordingly.
[0052]
Further, since the swing drive unit 63 attached to the nozzle holder 61 is covered with the cover 64, impurities such as dust generated from the swing drive unit 63 on the wafer W adhere to the wafer W being processed. Therefore, contamination of the wafer W can be prevented.
[0053]
In the above embodiment, the swing of the coating liquid discharge nozzle 60 is performed using the swing drive unit 63 provided with the swing motor, but may be performed using another mechanism. FIG. 9 shows such an example. The nozzle holder 100 held by the nozzle arm 70 is formed in, for example, a substantially U shape with an opening located below when viewed from the side, and a horizontal upper portion. 100a and side parts 100b and 100c formed downward from both ends of the upper part 100a, respectively. The nozzle holder 100 is made of a magnetic material such as stainless steel. The coating liquid discharge nozzle 101 is rotatably attached to the upper part 100a via the horizontal shaft 102 with the discharge port 101a facing downward. The coating liquid discharge nozzle 101 is sandwiched between the side portions 100b and 100c. The coating liquid discharge nozzle 101 has an elongated shape and is made of a magnetic material such as iron. Further, in the coating liquid discharge nozzle 101, a coating liquid supply pipe 103 communicating from the discharge port 101a to a coating liquid supply apparatus (not shown) passes through.
[0054]
One end 100b of the nozzle holder 100 is connected to one end of a spring 104, which is an elastic body, and the other end of the spring 104 is connected to the side surface of the coating liquid discharge nozzle 101. Therefore, when the coating liquid discharge nozzle 101 swings in one direction, the coating liquid discharge nozzle 101 is urged in the reverse direction by the restoring force of the spring 104. A coil 106 connected to a power source 105 is wound around the other side portion 100 c of the nozzle holder 100. That is, the side part 100c located to the side of the coating liquid discharge nozzle 101 is a solenoid. At the lower end of the side portion 100c, a convex portion 100d protruding inward which is the coating liquid discharge nozzle 101 side is formed. Therefore, the convex part 100d and the coating liquid discharge nozzle 101 are close to each other.
[0055]
Then, when a rectangular wave current that repeats ON / OFF, for example, is caused to flow through the coil 106 by the power source 105, the current first flows through the coil 106, an electromagnetic force is generated at the side portion 100c, and the coating liquid discharge nozzle 101 is applied to the convex portion 100d. Be attracted. When no current flows through the coil 106, the attractive force of the convex portion 100d disappears, and the coating liquid discharge nozzle 101 moves to the side portion 100b side by the elastic force and inertial force of the spring 104. When a current again flows through the coil 106, the coating liquid discharge nozzle 101 moves again to the side portion 100c. By repeating this operation, the coating liquid discharge nozzle 101 reciprocally swings. As in the above-described embodiment, the coating liquid is ejected while the coating liquid ejection nozzle 101 is swung and the wafer W rotates, so that the coating liquid can be supplied to a circular region near the center on the wafer W. . The swing angle and swing angular velocity of the coating liquid discharge nozzle 101 can be controlled by changing the magnitude of the current flowing through the coil 106, for example. It should be noted that even if the coating liquid discharge nozzle 101 has a certain polarity of magnetism and magnets of different poles are alternately generated on the side portion 100b, which is a solenoid, the coating liquid discharge nozzle 101 is swung by its counter-attraction force. Good. In this case, the spring 104 may not be provided. Further, a pulse motor (step rotation type) may be used as the swinging method.
[0056]
In the embodiment described above, the coating liquid is supplied to the circular region R on the wafer W by swinging the coating liquid discharge nozzle 60 above the center of the wafer W and rotating the wafer W. In a state where the rotation of W is stopped, the coating liquid discharge nozzle 60 that discharges the coating liquid is swung, and the position of the coating liquid discharge nozzle 60 is shifted in a certain horizontal direction, so that a predetermined region on the wafer W is obtained. You may make it supply a coating liquid to. In such a case, for example, the coating liquid discharge nozzle 60 is moved in the Y direction in accordance with the swing of the coating liquid discharge nozzle 60. For example, every time the coating liquid discharge nozzle 60 reaches the maximum angle, the nozzle arm 70 moves by a predetermined distance in the positive direction of the Y direction. By doing so, the locus of the coating solution has a substantially rectangular wave shape, and a rectangular coating region R1 is formed near the center on the wafer W as shown in FIG. Even in this case, since the range in which the coating liquid is spread thereafter becomes narrow, the occurrence of coating spots can be suppressed.
[0057]
In the above example, every time the position of the coating liquid discharge nozzle 60 is shifted in the Y direction, the swing angle of the coating liquid discharge nozzle 60 is sequentially changed. As shown in FIG. You may make it supply to circular area | region R2 centering on the center part of W. For example, the control unit K changes the swing angle of the coating liquid discharge nozzle 60. While the coating liquid discharge nozzle 60 moves on the wafer W in the Y direction, the swing angle of the coating liquid discharge nozzle 60 is first gradually increased and then decreased. In this way, the coating liquid can be supplied to the circular region R2 on the wafer W.
[0058]
In the above example, the coating liquid discharge nozzle 60 side is gradually moved in the Y direction, but the wafer W side may be moved. FIGS. 12 and 13 show such an example, and the spin chuck 50 is movably placed on a rail 110 laid in the Y direction. The spin chuck 50 is provided with a horizontal drive unit 111 having a motor and the like for moving on the rail 110. When applying the coating liquid onto the wafer W, the coating liquid discharge nozzle 60 reciprocally swings at the same position while discharging the coating liquid, and the spin chuck 50 is moved in the Y direction in accordance with the swing. Shift the distance. By doing so, the coating liquid can be supplied to a predetermined region on the wafer W as in the above embodiment. Thereafter, the wafer W is rotated at a high speed, the coating liquid on the wafer W is diffused, and a coating film having no spots is formed on the wafer W. In such an example, since the coating liquid discharge nozzle 60 does not move, the coating liquid supply pipe 66 connected to the coating liquid discharge nozzle 60 is not moved during coating, and a stable coating liquid can be discharged from the coating liquid discharge nozzle 60.
[0059]
In the above embodiment, the coating liquid is discharged to a partial area on the wafer by the oscillating coating liquid discharge nozzle 60, but it may be discharged to the entire surface of the wafer W. In such a case, there is no need for a step of rotating the wafer W to spread the coating liquid, so that coating spots caused by spin coating can be completely prevented. At this time, the swing speed of the coating liquid discharge nozzle 60 may be changed by the control unit K during one reciprocation of the coating liquid discharge nozzle 60. For example, as the angle formed with the downward direction of the coating liquid discharge nozzle 60 increases, the swing speed is decreased. Conversely, as the angle formed with the downward direction of the coating liquid discharge nozzle 60 becomes smaller, the oscillation speed is increased. By doing so, since the same amount of coating solution is always dripped onto the surface of the wafer W, a coating film having a uniform thickness can be formed in the wafer W surface.
[0060]
Further, the coating liquid may be partially ejected to a predetermined location on the wafer W by using the coating liquid ejection nozzle 60. For example, after the coating liquid is supplied onto the wafer W, the coating liquid discharge nozzle 60 moves to a lower part of the base pattern, and supplies the coating liquid to the low part of the base pattern. By doing so, the coating liquid is added to the lower portion of the base pattern, and finally a flat coating film is formed on the wafer W. As a result, for example, processing performed on the entire surface of the wafer W is performed uniformly in the wafer W surface, and a homogeneous device can be formed in the wafer W surface. Note that a film thickness measuring device may be provided in the SOD film forming system 1, the measurement result of the film thickness may be fed back, and the coating solution may be partially discharged to a predetermined location on the wafer W. In this embodiment, a general nozzle having a circular discharge port at the center is used. However, for example, a rectangular discharge port or a nozzle having a plurality of discharge ports may be used.
[0061]
In the above embodiment, the present invention is applied to the coating solution coating apparatus 17 for forming an interlayer insulating film. However, the present invention is applicable to other types of films, for example, SOG which is an insulating film. The present invention can also be applied to a coating solution coating apparatus for forming a film, a polyimide film as a protective film, a photoresist film, and the like. The present invention can also be applied to coating processing apparatuses such as a substrate other than the wafer W, such as an FPD (flat panel display) substrate, a mask substrate, and a reticle substrate.
[0062]
【The invention's effect】
According to the present invention, since the coating liquid can be uniformly applied on the substrate without any unevenness, a coating film having a predetermined thickness is formed on the entire surface of the substrate, thereby improving the yield. Further, since a coating film can be formed on the substrate with a small amount of coating solution, the cost can be reduced.
[Brief description of the drawings]
FIG. 1 is a plan view showing an outline of a configuration of an SOD film forming system in which a coating processing apparatus according to an embodiment is mounted.
FIG. 2 is a front view of the SOD film forming system of FIG.
FIG. 3 is a rear view of the SOD film forming system of FIG. 1;
FIG. 4 is an explanatory view of a longitudinal section showing an outline of a configuration of a coating treatment apparatus.
FIG. 5 is an explanatory diagram of a cross section of the coating treatment apparatus of FIG. 4;
FIG. 6 is an explanatory diagram for explaining a mechanism in which a coating liquid discharge nozzle swings.
FIG. 7 is an explanatory diagram showing a state in which a coating liquid is discharged from a coating liquid discharge nozzle.
FIG. 8 is a plan view of a wafer showing a state in which a coating liquid is applied to a circular region.
FIG. 9 is an explanatory view showing an example of a mechanism for swinging a coating liquid discharge nozzle.
FIG. 10 is a plan view of a wafer showing a state in which a coating liquid is applied to a rectangular region.
FIG. 11 is a plan view of a wafer showing a state where a coating liquid is applied to a circular region.
FIG. 12 is an explanatory view of a longitudinal section showing an outline of a configuration of a coating processing apparatus when a rail for moving a spin chuck is provided.
13 is an explanatory view of a cross section of the coating treatment apparatus of FIG.
[Explanation of symbols]
1 SOD film formation system
17 Coating processing equipment
50 Spin chuck
60 Coating liquid discharge nozzle
61 Nozzle holder
63 Swing drive
70 Nozzle arm
W wafer

Claims

A coating processing apparatus for applying a coating solution to a substrate,
A substrate holding member for holding the substrate;
A rotation drive unit for rotating the substrate holding member;
A nozzle that discharges the coating liquid while reciprocally swinging with respect to the substrate held by the substrate holding member;
In a state where the substrate held by the substrate holding member is rotated at a relatively low speed by the rotation driving unit, the coating liquid is discharged to the substrate while reciprocally swinging the nozzle, The coating liquid is supplied to a circular area centering on the center, and the substrate to which the coating liquid is supplied is rotated at a relatively high speed by the rotation drive unit, so that the coating liquid in the circular area is spread over the entire surface of the substrate. ,
The material of the nozzle is a magnetic material,
The nozzle is held by a nozzle holding part,
The nozzle holding portion is formed with a side portion located on the side of the nozzle, and the side portion is a solenoid,
The coating apparatus according to claim 1, wherein the nozzle can be swung by an electromagnetic force of a solenoid of the nozzle holding portion .

A coating processing apparatus for applying a coating solution to a substrate,
A substrate holding member for holding the substrate;
A rotation drive unit for rotating the substrate holding member;
A nozzle that discharges the coating liquid while reciprocally swinging with respect to the substrate held by the substrate holding member;
A drive unit that relatively moves the substrate holding member and the nozzle in a horizontal direction,
While the nozzle is reciprocally swung and the coating liquid is discharged onto the substrate held by the substrate holding member, the nozzle and the substrate are moved relative to each other by the drive unit, and the vicinity of the center portion of the substrate is moved. Supplying a coating solution to the region, rotating the substrate to which the coating solution is supplied by the rotation drive unit, spreading the coating solution in the region near the center to the entire surface of the substrate ;
The material of the nozzle is a magnetic material,
The nozzle is held by a nozzle holding part,
The nozzle holding portion is formed with a side portion located on the side of the nozzle, and the side portion is a solenoid,
The coating apparatus according to claim 1, wherein the nozzle can be swung by an electromagnetic force of a solenoid of the nozzle holding portion .

A coating processing apparatus for applying a coating solution to a substrate,
  A substrate holding member for holding the substrate;
  A rotation drive unit for rotating the substrate holding member;
  A nozzle that discharges the coating liquid while reciprocally swinging with respect to the substrate held by the substrate holding member;
  In a state where the substrate held by the substrate holding member is rotated at a relatively low speed by the rotation driving unit, the coating liquid is discharged onto the substrate while reciprocally swinging the nozzle, The coating liquid is supplied to a circular area centering on the center, and the substrate to which the coating liquid is supplied is rotated at a relatively high speed by the rotation drive unit, so that the coating liquid in the circular area is spread over the entire surface of the substrate. ,
  The nozzle is held by a nozzle holding part,
  The nozzle holding part includes a side part located on the side of the nozzle, and an elastic body that connects the side part and the nozzle,
  The coating apparatus according to claim 1, wherein the nozzle can be swung by an elastic force of an elastic body of the nozzle holding portion.

A coating processing apparatus for applying a coating solution to a substrate,
  A substrate holding member for holding the substrate;
  A rotation drive unit for rotating the substrate holding member;
  Nozzle that discharges coating liquid while reciprocally swinging with respect to the substrate held by the substrate holding member When,
  A drive unit that relatively moves the substrate holding member and the nozzle in a horizontal direction,
  While the nozzle is reciprocally swung and the coating liquid is discharged onto the substrate held by the substrate holding member, the nozzle and the substrate are moved relative to each other by the drive unit, and the vicinity of the center portion of the substrate is moved. Supplying a coating solution to the region, rotating the substrate to which the coating solution is supplied by the rotation drive unit, spreading the coating solution in the region near the center to the entire surface of the substrate;
  The nozzle is held by a nozzle holding part,
  The nozzle holding part includes a side part located on the side of the nozzle, and an elastic body that connects the side part and the nozzle,
  The coating apparatus according to claim 1, wherein the nozzle can be swung by an elastic force of an elastic body of the nozzle holding portion.

A coating processing apparatus for applying a coating solution to a substrate,
  A substrate holding member for holding the substrate;
  A rotation drive unit for rotating the substrate holding member;
  A nozzle that discharges the coating liquid while reciprocally swinging with respect to the substrate held by the substrate holding member;
  In a state where the substrate held by the substrate holding member is rotated at a relatively low speed by the rotation driving unit, the coating liquid is discharged onto the substrate while reciprocally swinging the nozzle, The coating liquid is supplied to a circular area centering on the center, and the substrate to which the coating liquid is supplied is rotated at a relatively high speed by the rotation drive unit, so that the coating liquid in the circular area is spread over the entire surface of the substrate. ,
  A swing drive unit for swinging the nozzle;
  The coating processing apparatus, wherein the swing driving unit is covered with a cover and attached to a nozzle holding unit that holds a nozzle.

A coating processing apparatus for applying a coating solution to a substrate,
  A substrate holding member for holding the substrate;
  A rotation drive unit for rotating the substrate holding member;
  A nozzle that discharges the coating liquid while reciprocally swinging with respect to the substrate held by the substrate holding member;
  A drive unit that relatively moves the substrate holding member and the nozzle in a horizontal direction,
  While the nozzle is reciprocally swung and the coating liquid is discharged onto the substrate held by the substrate holding member, the nozzle and the substrate are moved relative to each other by the drive unit, and the vicinity of the center portion of the substrate is moved. Supplying a coating solution to the region, rotating the substrate to which the coating solution is supplied by the rotation drive unit, spreading the coating solution in the region near the center to the entire surface of the substrate;
  A swing drive unit for swinging the nozzle;
  The coating processing apparatus, wherein the swing driving unit is covered with a cover and attached to a nozzle holding unit that holds a nozzle.

A coating processing apparatus for applying a coating solution to a substrate,
  A substrate holding member for holding the substrate;
  A rotation drive unit for rotating the substrate holding member;
  A nozzle that discharges the coating liquid while reciprocally swinging with respect to the substrate held by the substrate holding member;
  In a state where the substrate held by the substrate holding member is rotated at a relatively low speed by the rotation driving unit, the coating liquid is discharged onto the substrate while reciprocally swinging the nozzle, The coating liquid is supplied to a circular area centering on the center, and the substrate to which the coating liquid is supplied is rotated at a relatively high speed by the rotation drive unit, so that the coating liquid in the circular area is spread over the entire surface of the substrate. ,
  A coating processing apparatus comprising a control unit capable of changing a swing angle of the nozzle.

A coating processing apparatus for applying a coating solution to a substrate,
  A substrate holding member for holding the substrate;
  A rotation drive unit for rotating the substrate holding member;
  Nozzle that discharges coating liquid while reciprocally swinging with respect to the substrate held by the substrate holding member When,
  A drive unit that relatively moves the substrate holding member and the nozzle in a horizontal direction,
  While the nozzle is reciprocally swung and the coating liquid is discharged onto the substrate held by the substrate holding member, the nozzle and the substrate are moved relative to each other by the drive unit, and the vicinity of the center portion of the substrate is moved. Supplying a coating solution to the region, rotating the substrate to which the coating solution is supplied by the rotation drive unit, spreading the coating solution in the region near the center to the entire surface of the substrate;
  A coating processing apparatus comprising a control unit capable of changing a swing angle of the nozzle.

The coating processing apparatus according to claim 1, further comprising a control unit capable of changing a rocking speed of the nozzle.