JP4026888B2 - Surface position detection apparatus and projection exposure apparatus using the same - Google Patents

Description

[0001]
The present invention relates to a surface position detection apparatus, an exposure apparatus, and a device manufacturing method.
[0002]
[Prior art]
Currently, miniaturization of circuit patterns is progressing in accordance with higher integration of VLSI, and accordingly, projection lens systems used in projection exposure apparatuses have higher NA. As a result, the allowable depth of focus of the lens system in the circuit pattern transfer process is narrower. In addition, the size of the exposed area to be exposed by the projection lens system tends to increase.
[0003]
In order to make it possible to transfer a good circuit pattern over the entire exposed area enlarged in this way, the exposed area (shot) of the wafer is surely within the allowable depth of focus of the projection lens system. It is necessary to position the whole.
[0004]
In order to achieve this, the position and inclination of the projection surface on the wafer surface relative to the focal plane of the projection lens system, that is, the plane on which the circuit pattern image of the reticle is focused can be detected with high accuracy, and the position and inclination of the wafer surface can be adjusted. It becomes important.
[0005]
As a method of detecting the surface position of the wafer in the projection exposure apparatus, a method of detecting the surface position of a plurality of locations on the wafer surface using an air microsensor and obtaining the position of the wafer surface based on the result, or a light flux on the wafer surface Using a light projection type detection optical system (oblique incidence optical system) that detects the positional deviation of the reflection point of the reflected light from the wafer surface as the positional deviation of the reflected light on the sensor. A method for detecting the surface position of the surface is known.
[0006]
In many conventional projection exposure apparatuses, the wafer stage is moved to a target position by servo drive while measuring the amount of displacement of the wafer stage with a laser interferometer, so that the exposure area on the wafer is moved to the optical axis of the projection lens system. After the wafer stage is stopped, the surface position of the exposed area is detected by the method described above, and the surface position of the exposed area is adjusted. That is, operations such as wafer stage drive-stop-surface position detection-surface position adjustment are sequentially performed.
[0007]
[Problems to be solved by the invention]
A detector that detects the surface position of an exposed area on the wafer detects the surface position of the wafer from the incident position information of the light beam on the sensor (light receiving element) surface. Therefore, the detection operation of the wafer surface position is started when the exposure area to be detected on the wafer stage is sent to the detection position of the sensor (light receiving element). At this time, the detection operation starts. At the same time, the detection light is emitted from the light source and the reflected light from the wafer surface is detected.
[0008]
Incidentally, as described above, a light emitting element such as an LED is used as the most general light projecting means in the detector. When a light emitting element such as an LED is continuously operated in the forward direction, crystal defects in the slippery region are propagated due to an increase in the junction temperature. Has the disadvantage of reaching
[0009]
For this reason, as a measure for prolonging the service life, a method of using that does not light except during measurement is used. Therefore, when detecting the surface position of the wafer, the LED is turned on simultaneously with the start of the detection operation. For example, when a storage type light receiving element such as a CCD is used as a detector, immediately after the LED is turned on. Since the amount of light detected by the CCD is not stable, a measurement delay is required, for example, one scan is skipped after the LED is turned on, which causes a reduction in throughput.
[0010]
In addition, when it is necessary to always measure with a scanning type projection exposure apparatus or the like, the replacement frequency increases due to the life of the LED, which causes a reduction in the uptime of the projection exposure apparatus.
[0011]
An object of the present invention is to provide a high-throughput and high-accuracy surface position detection device.
[0012]
Another object of the present invention is to provide a high-throughput and high-precision exposure apparatus and device manufacturing method using the surface position detection apparatus.
[0013]
[Means for Solving the Problems]
The surface position detecting device according to the first aspect of the present invention includes a surface position having light projecting means for making a light beam incident on the object surface obliquely from above and a storage type position detecting means for detecting the position of reflected light from the object surface. A detection device,
Said position detecting means, periodic storage to perform the said object to output data corresponding to storage after moving to the target position, and the light emitting means, corresponding to said data by said position detecting means It is characterized by having a control means for starting light projection prior to accumulation .
[0014]
According to a second aspect of the invention, in the invention of claim 1, wherein the control means is at least one period of storage period of the position detecting means from the storage to the corresponding light projecting by said light projecting means to said data according to said position detecting means It is characterized by starting in advance.
[0015]
The invention of claim 3 is characterized in that, in the invention of claim 1 or 2, the light source included in the light projecting means is caused to emit pulse light in synchronization with the accumulation timing of the position detecting means .
[0016]
The invention of claim 4 is the invention according to any one of claims 1 to 3, a light source included in the light projecting means is characterized by an LED.
[0017]
The invention of claim 5 is the invention according to any one of claims 1 to 4, wherein the position detecting means is characterized in that it comprises a CCD.
[0018]
The invention of claim 6 is the invention according to any one of claims 1 to 5, has a stage for moving the object, said control means is characterized by controlling the movement of the stage.
[0019]
An exposure apparatus according to a seventh aspect of the present invention is an exposure apparatus for projecting a pattern onto a substrate, comprising the surface position detection device according to any one of claims 1 to 6, wherein the surface position detection device It is characterized by detecting the surface position of the substrate .
The invention of claim 8 is characterized in that in the invention of claim 7, it is a scanning exposure apparatus .
According to a ninth aspect of the present invention , there is provided a device manufacturing method comprising the step of projecting a pattern onto a substrate using the exposure apparatus according to the seventh or eighth aspect .
[0020]
DETAILED DESCRIPTION OF THE INVENTION
FIG. 1 is a schematic view of a main part of a part of a reduction type projection exposure apparatus (projection exposure apparatus using a step-and-repeat method or a step-and-scan method) provided with a surface position detection device of the present invention.
[0021]
In FIG. 1, reference numeral 1 denotes a reduction projection lens system (projection optical system), and its optical axis is indicated by AX in the drawing. The reduction projection lens system 1 projects the circuit pattern of the reticle R by reducing it to 1/5 times, for example, and forms a circuit pattern image on the focal plane. The optical axis AX is in a parallel relationship with the z-axis direction in the figure.
[0022]
Reference numeral 2 denotes a wafer (object) having a resist coated on the surface, and a plurality of exposed areas (shots) in which the same pattern is formed in the previous exposure process are arranged.
[0023]
Reference numeral 3 denotes a wafer stage (stage) on which the wafer 2 is placed. The wafer 2 is attracted and fixed to the wafer stage 3. The wafer stage 3 includes an X stage that moves in the x-axis direction, a Y stage that moves in the y-axis direction, and a θ-Z stage that rotates around the z-axis direction and axes parallel to the x, y, and z axes. The x, y and z axis waves are set to be orthogonal to each other.
[0024]
Therefore, by driving the wafer stage 3, the position of the surface of the wafer 2 is adjusted in the direction along the optical axis AX of the reduction projection lens system 1 and the plane perpendicular to the optical axis AX, and further the focal plane, The inclination with respect to the circuit pattern image is also adjusted.
[0025]
Reference numerals 4 to 11 in FIG. 1 indicate each element of the surface position detecting means including the oblique incident optical system provided for detecting the surface position and inclination of the wafer 2. Reference numeral 4 denotes a light-emitting diode as a light source for illumination, which is a high-intensity light source such as a semiconductor laser. Reference numeral 5 denotes an illumination lens.
[0026]
The light emitted from the light source 4 is converted into a parallel light beam by the illumination lens 5 and illuminates an aperture mask (hereinafter also referred to as “mask”) 6 having a single or plural pinholes. The figure shows a case where three pinholes 6a, 6b and 6c are provided.
[0027]
A plurality of spot lights that have passed through the respective pinholes of the mask 6 enter the folding mirror 8 through the imaging lens 7, change the direction by the folding mirror 8, and then enter the surface of the wafer 2. . At this time, a plurality of spots including the central portion (on the optical axis of the projection optical system 1) of the exposed area of the wafer 2 are illuminated with a plurality of spot lights via the mask 6.
[0028]
FIG. 2 shows a plurality of exposure areas 100, 100a, 100b on the wafer 2 surface.
[0029]
In this embodiment, a plurality of pinholes of the mask 6 are formed at a plurality of locations in the exposure region 100 of the wafer 2 shown in FIG. Here, the imaging lens 7 and the bending mirror 8 form an image of a plurality of pinholes of the mask 6 on the wafer 2.
[0030]
The light beam that has passed through the plurality of pinholes of the mask 6 irradiates a plurality of locations including the central portion of the exposed region 100 of the wafer 2 and is reflected at each location.
[0031]
That is, in the present embodiment, a plurality of pinholes are formed in the mask 6 and position information of a plurality of measurement points including the central portion in the exposed region 100 is measured.
[0032]
The light beam reflected at each measurement point on the wafer 2 is changed in direction by the bending mirror 9 and then incident on the position detection element 11 in which the light receiving elements are two-dimensionally arranged via the detection lens 10. Here, the detection lens 10 forms a pinhole image of the mask 6 on the position detection element 11 in cooperation with the imaging lens 7, the bending mirror 8, the wafer 2, and the bending mirror 9.
[0033]
That is, the mask 6 and the position detection element 11 of the wafer 2 are in an optically conjugate relationship with each other. Although schematically shown in FIG. 1, if it is difficult in terms of optical arrangement, a plurality of position detection elements 11 may be arranged separately corresponding to each pinhole.
[0034]
The position detection element 11 includes a two-dimensional CCD or line sensor, and can detect the incident positions of a plurality of light beams on the light receiving surface of the position detection element 11 through a plurality of pinholes independently. It has become.
[0035]
A change in the position of the reduction projection lens system 1 on the wafer 2 in the direction of the optical axis AX can be detected as a shift in the incident position of a plurality of light beams on the position detection element 11. The position of the wafer surface in the optical axis AX direction at the measurement point can be detected based on the output signal from the position detection element 11. The output signal from the position detection element 11 forms surface position data at each measurement point and is input to the control means 13.
[0036]
The displacement of the wafer stage 3 in the x-axis and y-axis directions is measured by a known method using a reference mirror 15 and a laser interferometer 14 provided on the wafer stage 3, and a signal indicating the displacement amount of the wafer stage 3 is measured by a laser. The signal is input from the interferometer 14 to the control means 13 via a signal line. The movement of the wafer stage 3 is controlled by a stage driving means (driving means) 12. The stage driving means 12 receives a command signal from the control means 13 via a signal line, and in response to this signal, the wafer stage 3 is moved to the wafer stage 3. Servo drive.
[0037]
In this embodiment, each element 4 to 8 constitutes one element of the light projecting means, and each element 9 to 11 constitutes one element of the light receiving means.
[0038]
In this embodiment, the stage driving unit 12 has two of a first driving unit and a second driving unit, and the first driving unit rotates and rotates the position (x, y) and the position (x, y) on the plane perpendicular to the optical axis AX of the wafer 2. θ) is adjusted, and the position (z) and the inclination (α, β) of the wafer 2 in the optical axis AX direction are adjusted by the second driving means.
[0039]
In addition to the drive control of the stage drive unit 12, the control unit 13 controls the drive by sending independent command signals to the light source 4 and the position detection element 11 via signal lines.
[0040]
The control means 13 starts the emission of the light flux by operating the light source 4 during the movement of the wafer stage 3 from the displacement amount of the wafer stage 3 in the x-axis and y-axis directions. After the exposed area 100 on the wafer 2 is sent to a target position to be aligned with the reticle pattern just below the optical axis AX of the reduction projection lens system 1, the control means 13 outputs an output signal ( Surface position data) is processed by a known method to detect the position of the surface of the wafer 2.
[0041]
The control means controls the light projecting means and the light receiving means independently, and the light projecting means using a light emitting element such as an LED uses a method of using that does not light after measurement, and servo-controls the stage to control the flat plate. Focus measurement in synchronization with at least one of the stage speed servo or position servo in the process of sending a predetermined surface of the object (wafer) to the image plane side of the projection optical system and matching the height position with the best focus plane By starting the lighting of the LED at least one cycle before the start, it is not necessary to perform idle reading after the LED is turned on, thereby realizing a high throughput.
[0042]
3, 4A, and 4B show the wafer stage 3 when the surface position of the exposed region 100 on the wafer 2 is detected by the surface position detecting means (4 to 11) of FIG. It is a timing chart showing the temporal behavior of the light source 4 and the two-dimensional position detection element 11.
[0043]
FIG. 3 shows a speed pattern when the wafer stage 3 sends the exposure area (shot) 100 directly below the reduction projection lens system 1 by servo drive. In other words, in this embodiment, the wafer stage 3 starts to be driven at time T0 so that the first exposed area 100a on the wafer 2 is directly below the optical axis AX of the reduction projection lens 1, and at time T1, the wafer stage 3 is driven to the first position relative to the reticle pattern. This shows that the alignment of one exposed area 100a is completed.
[0044]
4A and 4B show the temporal behavior of the surface position detection means (4 to 11) when detecting the surface position of the exposed area of the wafer 2. FIG.
[0045]
Here, the broken line 300 in the figure indicates the accumulation cycle of the accumulation type position detection element (CCD) 11 (the interval between two adjacent broken lines corresponds to one cycle), and the curve 400 indicates the LED light emitting element of the light source 4. Represents the response characteristics (light quantity change) of the CCD 11 after the start of irradiation. The shaded area 410 represents the measurement time by the CCD 11, and at time T4 in FIG. 4A and time T3 in FIG. 4B, the measurement operation is completed and the focus correction operation (surface position driving operation) is performed. Represents the start time.
[0046]
As described above, a light-emitting element such as an LED is used so that it is lit only at the time of measurement as a measure for extending the life.
[0047]
FIG. 4A shows a conventional method in which the light source 4 and the position detecting element 11 are aligned and executed after the wafer stage 3 is moved to the target position and aligned.
[0048]
4A, when the irradiation start of the light source 4 and the detection of the surface position by the position detection element 11 are simultaneously performed at time T1, as shown by the curve 400, the waveform data of the INT3 immediately after the LED is turned on (see FIG. 4A). ) Uses the waveform data (for example, INT4) accumulated after time (T1 + ΔT) in order to cause the detection waveform to be distorted due to the response characteristics of the CCD and cause the measurement value to have an error of 0.5 [μm] degrees. There was a problem that a delay of one cycle or more was required.
[0049]
On the other hand, in the present embodiment, as shown in FIG. 4B, the light source 4 is preceded by a known delay time (ΔT time) before time T1 when the wafer stage 3 finishes moving to the target position. By starting to irradiate the LED light-emitting element with a predetermined current value, the measurement value immediately after the LED is turned on is skipped, and the detection operation from time T1, that is, the processing based on the waveform data of INT3, is enabled, thereby solving the above-described throughput reduction problem is doing.
[0050]
Thus, for example, in a sequential movement type exposure apparatus having a throughput of 70 [sheets / h] having a CCD accumulation type position detecting element that requires an accumulation cycle of 10 [msec], if the present invention is implemented, one wafer is obtained. A throughput improvement of about 0.8 [sec] can be expected, and as a result, one or more throughput performances [sheet / h] can be improved.
[0051]
In FIG. 4B, the irradiation of the light source 4 is started in advance by a known delay time (ΔT time). Specifically, the known delay time is determined by a well-known speed equation for a wafer to be servo-driven. It is converted into the moving distance or driving speed of the stage 3 and input to the control device 13.
[0052]
As described above, the displacement of the wafer stage 3 in the x-axis and y-axis directions is measured by a known method using the reference mirror 15 and the laser interferometer 14 provided on the wafer stage 3, and the displacement amount of the wafer stage 3 is measured. Is input from the laser interferometer 14 to the control means 13 via a signal line.
[0053]
Accordingly, the control means 13 starts irradiation of the light source 4 in synchronization with at least one of the position servo or speed servo of the wafer stage 3, and the first exposed area 100 a on the wafer 2 is the optical axis of the reduction projection lens system 1. It is sent directly under AX to perform alignment with the reticle pattern. After the alignment is completed, detection of the surface position by the position detection element 11 is started, and the surface position of each measurement point in the exposed area 100a is detected by the surface position detection means (4 to 11) from time T1 after the alignment is completed. The surface position data of each measurement point is created in the control means 13 based on the output signal from the position detection element 11.
[0054]
The control means 13 processes the surface position data by a known method (for example, the method described in Japanese Patent Application No. 3-153858, Japanese Patent Application No. 2-237900, etc.), and the first exposed area 100a on the wafer 2 is processed. The distance between the surface position and the reticle pattern image in the optical axis AX direction and the tilt direction and tilt amount of the wafer 2 are calculated.
[0055]
A command signal corresponding to the calculation result is input to the stage driving unit 12 by the control unit 13, and the stage driving unit 12 adjusts (corrects) the position and inclination of the wafer 2 on the wafer stage 3 in the optical axis AX direction. . After the adjustment (correction) of the surface position, the first exposed area 100a is exposed to transfer the circuit pattern image.
[0056]
When the exposure on the first exposed area 100a is completed, the wafer stage 3 is driven so that the second exposed area 100b on the wafer 2 is directly below the optical axis AX of the projection lens system 1, and the stage is moving as described above. Then, after the irradiation of the light source 4 is started and the stage movement is completed, the surface position of the wafer 2 is detected immediately, and after the focus correction is performed, the exposure operation is executed.
[0057]
FIG. 5 is a flowchart in the case where the conventional surface position detection apparatus of this embodiment is implemented. In step 501, the wafer 2 is loaded onto the wafer stage 3 and fixed to the wafer chuck.
[0058]
In step 502, the driving of the wafer stage 3 starts, and the wafer stage 3 moves toward the target position so that the first exposed area 100a on the wafer 2 is directly below the optical axis AX of the projection lens 1.
[0059]
In step 503, based on the output of the laser interferometer 14, the LED is turned on in advance for a known time from when the LED is turned on until the LED becomes stable at a predetermined current value. Specifically, the above-mentioned time is converted into the moving distance or driving speed of the wafer stage 3 by using a well-known speed equation.
[0060]
A pinhole image of the mask 6 is projected onto each measurement point on the first exposed area 100a by the light projecting means (4 to 8).
[0061]
In step 504, the wafer stage 3 reaches the target position. The position information of the wafer stage 3 is obtained from the output from the laser interferometer 14.
[0062]
In step 505, CCD data is captured by the light receiving means (9 to 11), and the surface position of each measurement point is measured.
[0063]
At this time, since the lighting is started in step 503, the detected waveform data of the CCD is already in a stable state in step 504. Therefore, the measurement of the surface position of each immediate fixed point is not performed without waiting for a certain period of time. Is done.
[0064]
Simultaneously with the end of the measurement, the LED is turned off as shown in step 507.
[0065]
Almost at the same time, as shown in step 507, focus correction position calculation processing is performed from the measured value to detect the focus position.
[0066]
In step 508, the control means 13 inputs the focus correction amount as a command signal to the stage drive means 12, and performs focus correction drive.
[0067]
In step 509, the correction drive is completed, and the exposure is performed after the focus planes of the wafer 2 and the projection lens 1 are corrected.
[0068]
If it is determined in step 510 that exposure of all shots has not been completed, the process proceeds to step 502 and steps 502 to 510 are repeated.
[0069]
At the end of exposure of the final shot, in step 511, the wafer 2 is removed from the wafer chuck and the wafer 2 is unloaded.
[0070]
In this embodiment, the detection operation of the surface position detection means (4 to 11) represented by FIGS. 3, 4 (B), and 5 is performed by the irradiation start operation of the light source 4 and the measurement start operation of the position detection element 11. The time-dependent loss due to the measurement delay of the conventional surface position detecting means is eliminated.
[0071]
In the above embodiment, the irradiation of the light source 4 is started while the wafer stage 3 is moving, and the measurement of the position detection element 11 is started after the wafer stage 3 has finished moving to the target position. It may be performed while the wafer stage 3 is moving.
[0072]
Next, a second embodiment of the present invention will be described. In this embodiment, the surface position detection apparatus is applied to a scanning projection exposure apparatus.
[0073]
Since the scanning type projection exposure apparatus performs focus correction during exposure, for example, during exposure of an area of 32 mm, the LED is always lit for about 400 ms, which is in comparison with the sequential movement type projection exposure apparatus. The junction temperature of the LED frequently increases.
[0074]
In this case, it is possible to suppress the above-mentioned phenomenon by suppressing the average current by pulse lighting, but if it is not synchronized with the timing of the CCD accumulation time, the amount of received light is not stable within the accumulation time, and the detected waveform Appears as distortion, resulting in measurement errors.
[0075]
Therefore, in the present embodiment, the control means 13 in FIG. 1 is configured so that both the high-intensity light source 4 and the position detection element 11 can be controlled independently, and the light emission of the light source 4 and the accumulation timing of the position detection element 11 are synchronized. The light emission timing of the light source 4 is implemented in advance. Then, the number of pulse emission within the accumulation time of the position detection element 11 is controlled to be constant, and a detection waveform based on a stable received light quantity is obtained.
[0076]
Further, in order to obtain a good detection waveform in the light receiving means of each embodiment, the light emission intensity of the light source 4 is appropriately adjusted according to the surface state of the exposed area of the wafer 2.
[0077]
In the present embodiment, the surface information of the exposed area of the wafer 2 is acquired in advance in the scanning exposure, and the light emission intensity of the light source 4 is appropriately adjusted according to the surface information.
[0078]
In the present embodiment, when it is necessary to always measure, such as during scanning exposure, the lighting of the LED is started prior to the visible measurement and the lighting operation of the LED being measured is used as the pulse lighting mode. High-precision height position detection without impairing the detection accuracy by suppressing the temperature rise of the part, preventing the increase of LED crystal defects, and performing pulse lighting in synchronization with the accumulation start operation of the storage element such as CCD It is carried out.
[0079]
In each of the above embodiments, a two-dimensional position detection element is used as the position detection element. However, the same effect can be obtained even when a plurality of one-dimensional position detection elements are arranged. The light source is not limited to LEDs.
[0080]
In addition to moving the Z stage of the wafer stage 3, the mechanism for focusing the surface of the wafer 2 on the focal plane of the projection lens system also changes the focal length of the projection lens system 1, and the projection lens 1 and a reticle (not shown). And a mechanism for moving up and down in the direction of the optical axis AX can also be adopted.
[0081]
In each of the embodiments described above, the case where the present invention is applied to a reduction type projection exposure apparatus has been described. However, the present invention is an exposure apparatus of a type other than the apparatus shown in FIG. 1, for example, an apparatus that projects a pattern image by a projection mirror system. Further, the present invention can be similarly applied to an apparatus for projecting a pattern image by a projection optical system composed of a lens and a mirror.
[0082]
The present invention is also applicable to an electron beam exposure apparatus or an X-ray exposure apparatus that draws a circuit pattern or projects a circuit pattern by using, for example, an electron beam and an electron lens other than an optical exposure apparatus. The same can be applied.
[0083]
The present invention can be similarly applied to an optical apparatus that requires a surface position detection device other than the exposure device.
[0084]
Next, an embodiment of a semiconductor device manufacturing method using the above-described projection exposure apparatus will be described.
[0085]
FIG. 6 is a flowchart of manufacturing a semiconductor device (a semiconductor chip such as an IC or LSI, or a liquid crystal panel or a CCD).
[0086]
In this embodiment, in step 1 (circuit design), a semiconductor device circuit is designed. In step 2 (mask production), a mask on which the designed circuit pattern is formed is produced.
[0087]
On the other hand, in step 3 (wafer manufacture), a wafer is manufactured using a material such as silicon. Step 4 (wafer process) is called a pre-process, and an actual circuit is formed on the wafer by lithography using the prepared mask and wafer.
[0088]
The next step 5 (assembly) is called a post-process, and is a process for forming a semiconductor chip using the wafer manufactured in step 4, and is a process such as an assembly process (dicing, bonding), a packaging process (chip encapsulation), or the like. including.
[0089]
In step 6 (inspection), the semiconductor device manufactured in step 5 undergoes inspections such as an operation confirmation test and a durability test. Through these steps, the semiconductor device is completed and shipped (step 7).
[0090]
FIG. 7 is a detailed flowchart of the wafer process in Step 4 above. First, in step 11 (oxidation), the wafer surface is oxidized. In step 12 (CVD), an insulating film is formed on the wafer surface.
[0091]
In step 13 (electrode formation), an electrode is formed on the wafer by vapor deposition. In step 14 (ion implantation), ions are implanted into the wafer. In step 15 (resist process), a photosensitive agent is applied to the wafer. In step 16 (exposure), the circuit pattern of the mask is printed on the wafer by exposure using the exposure apparatus described above.
[0092]
In step 17 (development), the exposed wafer is developed. In step 18 (etching), portions other than the developed resist are removed. In step 19 (resist stripping), the resist that has become unnecessary after etching is removed. By repeating these steps, multiple circuit patterns are formed on the wafer.
[0093]
If the manufacturing method of this embodiment is used, a highly integrated semiconductor device can be easily manufactured.
[0094]
According to the present invention, a high-throughput and high-accuracy surface position detection device can be provided.
[0095]
Further, it is possible to provide a high-throughput and high-precision exposure apparatus and device manufacturing method using the surface position detection apparatus.
[Brief description of the drawings]
FIG. 1 is a schematic diagram of a main part of a first embodiment when a surface position detection apparatus of the present invention is applied to a projection exposure apparatus. FIG. 2 is an explanatory view showing an arrangement of exposed areas (shots) on a wafer. FIG. 4 is a timing chart of surface position detection in the first embodiment of the present invention. FIG. 5 is a flowchart of surface position detection in the first embodiment of the present invention. 6 is a flowchart of a device manufacturing method according to the present invention. FIG. 7 is a flowchart of a device manufacturing method according to the present invention.
DESCRIPTION OF SYMBOLS 1 Projection optical system 2 Wafer 3 Wafer stage 4 Light source 5 Illumination lens 6 Mask 7 Imaging lens 8, 9 Mirror 10 Detection lens 11 Position detection element 12 Stage drive means 13 Control means 14 Laser interferometer 100 Exposure area 300 CCD accumulation period 400 CCD response characteristics 410 CCD measurement time R Reticle

Claims (9)

A surface position detecting device having a light projecting unit that makes a light beam incident on an object surface obliquely from above and a storage type position detecting unit that detects a position of reflected light from the object surface,
Said position detecting means, periodic storage to perform the said object to output data corresponding to storage after moving to the target position, and the light emitting means, corresponding to said data by said position detecting means A surface position detecting device comprising a control means for starting light projection prior to accumulation . The control means according to claim 1, characterized in that to start with a projection and at least one period preceding the accumulation period of the position detecting means from the storage corresponding to the data by the position detecting means according to said light projecting means The surface position detection apparatus described in 1. The surface position detecting apparatus according to claim 1 or 2, characterized in a light source that is pulsed emit included in the light projecting means in synchronization with the accumulation timing of said position detecting means. The surface position detecting apparatus according to any one of claims 1 to 3, wherein the light source included in the light emitting means is an LED. It said position detecting means surface position detecting apparatus according to any one of claims 1 to 4, characterized in that it comprises a CCD. Has a stage for moving the object, the control means surface position detecting apparatus according to any one of claims 1 to 5, characterized in that for controlling the movement of the stage. An exposure apparatus for projecting a pattern on a substrate, characterized by detecting a surface position of the substrate has a surface position detecting apparatus according to any one of claims 1 to 6, by the surface position detecting device An exposure apparatus. The exposure apparatus according to claim 7 , wherein the exposure apparatus is a scanning exposure apparatus. Method of manufacturing a device, said method including the step of projecting a pattern on a substrate using an exposure apparatus according to claim 7 or 8.

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